CN107342253B - 用于热处理腔室的支撑圆柱 - Google Patents

用于热处理腔室的支撑圆柱 Download PDF

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Publication number
CN107342253B
CN107342253B CN201710619830.6A CN201710619830A CN107342253B CN 107342253 B CN107342253 B CN 107342253B CN 201710619830 A CN201710619830 A CN 201710619830A CN 107342253 B CN107342253 B CN 107342253B
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China
Prior art keywords
support cylinder
peripheral surface
inner peripheral
substrate
outer peripheral
Prior art date
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CN201710619830.6A
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English (en)
Chinese (zh)
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CN107342253A (zh
Inventor
梅兰·贝德亚特
阿伦·缪尔·亨特
约瑟夫·M·拉内什
诺曼·L·塔姆
杰弗里·托宾
继平·李
马丁·德兰
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN107342253A publication Critical patent/CN107342253A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
CN201710619830.6A 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱 Active CN107342253B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361866379P 2013-08-15 2013-08-15
US61/866,379 2013-08-15
US14/298,389 US9385004B2 (en) 2013-08-15 2014-06-06 Support cylinder for thermal processing chamber
US14/298,389 2014-06-06
CN201480043642.8A CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Related Parent Applications (1)

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CN201480043642.8A Division CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Publications (2)

Publication Number Publication Date
CN107342253A CN107342253A (zh) 2017-11-10
CN107342253B true CN107342253B (zh) 2021-12-28

Family

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Family Applications (3)

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CN201710619830.6A Active CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201480043642.8A Active CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710952706.1A Active CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201480043642.8A Active CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710952706.1A Active CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Country Status (6)

Country Link
US (3) US9385004B2 (enExample)
JP (2) JP6453882B2 (enExample)
KR (2) KR101713078B1 (enExample)
CN (3) CN107342253B (enExample)
TW (3) TWI688040B (enExample)
WO (1) WO2015023352A1 (enExample)

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SG10201709699RA (en) * 2013-05-23 2017-12-28 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
US9385004B2 (en) * 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber
US9330955B2 (en) * 2013-12-31 2016-05-03 Applied Materials, Inc. Support ring with masked edge
WO2017099919A1 (en) * 2015-12-07 2017-06-15 Applied Materials, Inc. Amalgamated cover ring
TWI776859B (zh) * 2017-03-06 2022-09-11 美商應用材料股份有限公司 旋轉器蓋
US11004704B2 (en) 2017-03-17 2021-05-11 Applied Materials, Inc. Finned rotor cover
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
CN111819679A (zh) * 2018-03-13 2020-10-23 应用材料公司 具有等离子体喷涂涂层的支撑环
CN109148353A (zh) * 2018-08-15 2019-01-04 深圳市华星光电技术有限公司 一种基板承托盘
JP7178823B2 (ja) * 2018-08-17 2022-11-28 東京応化工業株式会社 基板加熱装置および基板処理システム
DE102019104433A1 (de) * 2019-02-21 2020-08-27 Aixtron Se CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur
JP7461214B2 (ja) * 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
KR102787323B1 (ko) 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US20240141487A1 (en) * 2022-10-27 2024-05-02 Applied Materials, Inc. Epi overlapping disk and ring
US20240247404A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Pre-heat rings and processing chambers including black quartz, and related methods
US20240312807A1 (en) * 2023-03-17 2024-09-19 Applied Materials, Inc. Radiation separation system

Citations (8)

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US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
JP2002270530A (ja) * 2001-03-14 2002-09-20 Tokyo Electron Ltd 加熱装置、熱処理装置及びランプ冷却方法
US20040060512A1 (en) * 2002-09-30 2004-04-01 Waldhauer Ann P. High temperature anneal with improved substrate support
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
US20080092821A1 (en) * 2004-08-24 2008-04-24 Shin-Etsu Handotai Co., Ltd. Quartz Jig and Semiconductor Manufacturing Apparatus
CN101207010A (zh) * 2006-12-14 2008-06-25 应用材料股份有限公司 使用二次工艺平面快速传导冷却
US20090296774A1 (en) * 2008-05-30 2009-12-03 Applied Materials, Inc. Method and apparatus for detecting the substrate temperature in a laser anneal system

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US5960555A (en) 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6133152A (en) 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
US6200388B1 (en) 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
JP2000256037A (ja) * 1999-03-05 2000-09-19 Tosoh Corp 透明部を有する黒色石英ガラス及びその製造方法
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JP2007042844A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置及びサセプタ
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JP5048445B2 (ja) 2007-10-11 2012-10-17 信越石英株式会社 透明層付き黒色合成石英ガラス
JP5441243B2 (ja) 2009-02-24 2014-03-12 信越石英株式会社 赤外線透過性部材の熱処理用石英ガラス治具
JP5545090B2 (ja) * 2010-07-13 2014-07-09 株式会社Ｓｕｍｃｏ ウェーハ支持治具及び軸状部材並びにシリコンウェーハの熱処理方法
JP5583082B2 (ja) * 2011-06-21 2014-09-03 信越石英株式会社 透明層付き黒色合成石英ガラスの製造方法
US9385004B2 (en) * 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
JP2002270530A (ja) * 2001-03-14 2002-09-20 Tokyo Electron Ltd 加熱装置、熱処理装置及びランプ冷却方法
US20040060512A1 (en) * 2002-09-30 2004-04-01 Waldhauer Ann P. High temperature anneal with improved substrate support
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
US20080092821A1 (en) * 2004-08-24 2008-04-24 Shin-Etsu Handotai Co., Ltd. Quartz Jig and Semiconductor Manufacturing Apparatus
CN101207010A (zh) * 2006-12-14 2008-06-25 应用材料股份有限公司 使用二次工艺平面快速传导冷却
US20090296774A1 (en) * 2008-05-30 2009-12-03 Applied Materials, Inc. Method and apparatus for detecting the substrate temperature in a laser anneal system

Also Published As

Publication number Publication date
JP6453882B2 (ja) 2019-01-16
US20160300752A1 (en) 2016-10-13
JP6688865B2 (ja) 2020-04-28
WO2015023352A1 (en) 2015-02-19
TWI604559B (zh) 2017-11-01
KR101966566B1 (ko) 2019-04-05
CN105453248B (zh) 2019-12-10
US9659809B2 (en) 2017-05-23
CN107731718A (zh) 2018-02-23
KR20170026647A (ko) 2017-03-08
TW201507056A (zh) 2015-02-16
CN107342253A (zh) 2017-11-10
US20170263493A1 (en) 2017-09-14
US10128144B2 (en) 2018-11-13
CN105453248A (zh) 2016-03-30
KR20160044002A (ko) 2016-04-22
US20150050819A1 (en) 2015-02-19
JP2016534558A (ja) 2016-11-04
TWI656598B (zh) 2019-04-11
US9385004B2 (en) 2016-07-05
TW201816932A (zh) 2018-05-01
JP2019071439A (ja) 2019-05-09
TWI688040B (zh) 2020-03-11
TW201931516A (zh) 2019-08-01
KR101713078B1 (ko) 2017-03-09
CN107731718B (zh) 2022-05-17

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