CN107331713B - 一种太阳能电池 - Google Patents

一种太阳能电池 Download PDF

Info

Publication number
CN107331713B
CN107331713B CN201710442032.0A CN201710442032A CN107331713B CN 107331713 B CN107331713 B CN 107331713B CN 201710442032 A CN201710442032 A CN 201710442032A CN 107331713 B CN107331713 B CN 107331713B
Authority
CN
China
Prior art keywords
film
amorphous silicon
electrode
type
battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201710442032.0A
Other languages
English (en)
Other versions
CN107331713A (zh
Inventor
王强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantong University
Original Assignee
Nantong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantong University filed Critical Nantong University
Priority to CN201710442032.0A priority Critical patent/CN107331713B/zh
Publication of CN107331713A publication Critical patent/CN107331713A/zh
Application granted granted Critical
Publication of CN107331713B publication Critical patent/CN107331713B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种太阳能电池，透明顶电极的下表面制有与其材质相同的若干条状凸棱，使顶电极局部形成T型结构，凸棱下方的P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜下表面向下凸起形成条状鼓包，对应位置的底电极与透明导电过渡薄膜的接触面具有与凸棱一一对应的条状弧形反射面。本发明顶电极深入薄膜内，提高电极对电流的收集能力；电极上后续淀积的薄膜材料形成弧形鼓包，增加了薄膜电池的面积，增加了电池的受光面；金属底电极具有凹面镜结构的背反射面，增加了电池对反射光的利用，从而提高了电池对光的吸收和利用，进一步提高电池的转换效率。

Description

一种太阳能电池
技术领域
本发明涉及一种太阳能电池，属于太阳能电池技术领域。
背景技术
光子、电子和声子都是能量的载体。太阳能电池作为光电能量转换器件，主要是光子和电子之间相互交换能量，同时有声子参与这个交换过程。这种能量的相互作用主要发生在太阳电池材料表面数微米的范围内，这为制造薄膜太阳电池提供了物理基础。
非晶硅薄膜太阳电池因其可以显著降低硅的使用量，制备工艺温度低等优点，成为了降低太阳电池成本最有吸引力的硅基太阳电池之一。但是，与其它硅基太阳电池相比，非晶硅薄膜太阳电池的转换效率偏低。
一般来说，提高电池性能的方法主要有：采用多结结构，提高电池对不同波长光的吸收；采用不同的电池材料构成异质结电池；采用特形基板，提高电池对光的吸收等。但这些方法对于电池的制备成本的降低和电池性能的提高有限。因此，研发新型薄膜太阳电池对降低电池成本，提高电池性能有重要的意义。
通常薄膜太阳电池的电极都是采用与薄膜平行的方式。该方式制备的薄膜电极，制备方法简单，性能稳定，但是，该方式的电极对电池性能的提高有限。因此，研究新型薄膜太阳电池电极，提高电池对光的吸收和增加电池受光面积有重要的意义。
现在人们生产的主流薄膜太阳能电池的结构如图1 所示，从上而下分别为：绝缘衬底5、透明顶电极1、P 型非晶硅薄膜2 、本征非晶硅薄膜6、N 型非晶硅薄膜3、底电极4。P型非晶硅薄膜2 和本征非晶硅薄膜6叠合连接，本征非晶硅薄膜6和N 型非晶硅薄膜3再叠合连接，构成一个P-i-N 结，顶电极1 和底电极4 分别置于P 型非晶硅薄膜2上端面和N 型非晶硅薄膜3下端面，最终形成一单结非晶硅薄膜太阳能电池。
发明内容
本发明的目的在于：克服上述现有技术的缺陷，提出一种太阳能电池，电池具有更高的光电转换效率，其生产工艺简单易行。
为了达到上述目的，本发明提出的一种太阳能电池，从上至下包括依次连接的透明顶电极、P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜、底电极，其特征在于：所述透明顶电极的下表面制有与若干条状透明导电凸棱，使顶电极局部形成T型结构，所述凸棱下方的P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜下表面向下凸起形成条状鼓包，对应位置的底电极与透明导电过渡薄膜的接触面具有与凸棱一一对应的条状弧形反射面。
本发明太阳能电池，进一步的改进在于：
1、所述P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜的厚度均匀。
2、所述透明顶电极为TCO玻璃，透明顶电极的导电薄膜和透明导电过渡薄膜为掺氟氧化锌或氧化铟硒的薄膜，所述底电极为铝或银材料制成的面状金属电极。
3、所述凸棱的高宽比为1：3～1：2，凸棱之间互相平行，凸棱的间距范围为：1-2um，高度范围为：100-300nm。
4、所述P型非晶硅薄膜中硼元素的掺杂浓度为1017～1019/cm3的；所述本征非晶硅薄膜中无杂质掺杂，所述N型非晶硅薄膜中磷元素的掺杂浓度为1017～1019/cm3，所述P型非晶硅薄膜的沉积厚度范围为：180-220nm，本征非晶硅薄膜的沉积厚度范围为：0.5-1um，N型非晶硅薄膜的沉积厚度范围为：180-220nm。
此外，本发明还提供了一种T型顶电极背反射薄膜太阳电池的生产工艺，其特征在于包括如下步骤：
第1步、制备平板式透明顶电极；
第2步、透明顶电极表面制备若干条状透明导电凸棱，该凸棱与透明顶电极形成T型结构；
第3步、在透明顶电极表面逐次淀积厚度均匀的P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜，使P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜在凸棱对应区域向外凸起形成条状鼓包；
第4步、在透明导电过渡薄膜表面淀积底电极，所述底电极与透明导电过渡薄膜的接触面形成若干与所述凸棱一一对应的弧形反射面。
本发明T型顶电极背反射薄膜太阳电池的制造工艺的进一步改进在于：
1、所述第2步中，将开有若干长条形窗口的掩模覆盖于平板式透明顶电极表面，并对掩模的窗口进行掺氟氧化锌或氧化铟硒的透明材料二次淀积，获得与透明顶电极材质相同的凸棱，使顶电极局部形成T型结构。
2、所述第1步中，在平板玻璃表面采用磁控溅射法制备掺氟氧化锌或氧化铟硒的导电薄膜，形成透明顶电极；第2、第3步中，分别采用磁控溅射法制备掺氟氧化锌或氧化铟硒的凸棱、透明导电过渡薄膜。
3、第4步中、底电极是通过磁控溅射铝或银在透明导电过渡薄膜上形成导电的铝薄膜或银薄膜。
4、第3步中，所述P型非晶硅薄膜、本征非晶硅薄膜和N型非晶硅薄膜都采用等离子化学增强气相沉积仪进行的淀积。
本发明的薄膜太阳能电池与现有的薄膜太阳能电池相比，电池的顶电极具有T型结构，其凸棱（可视为顶电极的一部分）深入薄膜内，提高电极对电流的收集能力；电极上后续淀积的薄膜材料在凸棱对应位置形成的弧形鼓包，增加了薄膜电池的面积，增加了电池的受光面；最后淀积的金属底电极覆盖于弧形薄膜上，形成具有凹面镜结构的背反射面，增加了电池对反射光的利用，从而提高了电池对光的吸收和利用，进一步提高电池的转换效率。
本发明薄膜太阳能电池的制备工艺与现有薄膜电池生产工艺兼容，可利用现有设备进行生产，仅仅在制备过程中增加了凸棱（可视为顶电极的一部分）的二次淀积步骤，在几乎不额外增加成本的前提下，提高了电池性能。
附图说明
下面结合附图对本发明作进一步的说明。
图1是现有薄膜太阳电池结构示意图。
图2是本发明太阳能电池结构示意图。
图3是本发明电池与传统薄膜电池的光谱响应曲线对比图。
具体实施方式
下面结合附图和具体实施例对本发明做进一步说明。
产品实施例
如图2所示为本发明太阳能电池，从上至下包括依次连接的透明顶电极1、P型非晶硅薄膜2、本征非晶硅薄膜6、N型非晶硅薄膜3、透明导电过渡薄膜8、底电极4，本发明的改进之处在于透明顶电极1的下表面制有与透明导电凸棱7，使顶电极局部形成T型结构，凸棱7下方的P型非晶硅薄膜2、本征非晶硅薄膜6、N型非晶硅薄膜3、透明导电过渡薄膜8下表面向下凸起形成条状鼓包，对应位置的底电极4与透明导电过渡薄膜的接触面具有与凸棱7一一对应的条状弧形反射面。本例中透明顶电极选用TCO玻璃（透明导电氧化物镀膜玻璃），其导电薄膜和透明导电过渡薄膜8中掺有氟氧化锌（也可选择掺氧化铟硒）。P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜的厚度均匀。其中P型非晶硅薄膜中硼元素的掺杂浓度为1017～1019/cm3的；本征非晶硅薄膜中无杂质掺杂，N型非晶硅薄膜中磷元素的掺杂浓度为1017～1019/cm3。
本实施例中P型非晶硅薄膜的沉积厚度为：200nm，本征非晶硅薄膜的沉积厚度为：700um，N型非晶硅薄膜的沉积厚度为：200nm，透明导电过渡薄膜的沉积厚度为40-50nm，凸棱的高度为100nm，宽度为200nm，间距为2 um。
电池的P型非晶硅薄膜2、本征非晶硅薄膜5、N型非晶硅薄膜3三者结合，形成P-i-N结，光线照射到P-i-N结表面产生电子空穴对，电子在电场作用下向电极移动，使电池产生电能。
本发明电池的顶电极通过两次淀积形成T型结构。在此电极上淀积硅薄膜和底电极后，形成了一个弧形的鼓包，使底电极形成了凹面镜结构的反射面，有利于对入射的阳光进行汇聚，提高对光的利用。由于形成的T型电极的面积较大，所以在T型电极上形成的电池的面积较大，所以电池的受光面更大。以上两个优点，提高了电池的光电转换效率。
对本实施例薄膜电池进行了光谱响应仿真试验，并与传统薄膜电池进行比较，该试验的结果请参见图3，图中颜色较深的为本发明电池光谱响应曲线，颜色较浅的为传统薄膜电池的光谱响应曲线。
实验结果表明，两种电池的光谱响应变化趋势相同，都是在300～600nm波段随着波长的增加而增加，到600nm以后光谱响应强度下降。而本发明电池则在整个太阳光谱区的响应强度较普通非晶硅薄膜太阳能电池均有所增强。
通过对整个光谱响应的积分可以看出，本发明电池的光谱响应比普通非晶硅薄膜太阳能电池增强约6%。这表明本发明电池中的T型电极可以有效的提高非晶硅薄膜电池的光谱响应。这是因为本发明电池中的T型电极增大了电池受光面积，同时凹面镜型的底电极可以实现对入射光的汇聚，提高电池对光的吸收，因此，仿真的所有波段的光谱响应都有所增加，且效果较为明显。
工艺实施例
本实施例T型顶电极背反射薄膜太阳电池的生产工艺，采用“倒装”的生产工艺，包括如下步骤：
第1步、制备平板式透明顶电极：采用磁控溅射法在玻璃表面制备掺氟氧化锌导电薄膜，获得平板式透明顶电极（本例中为TCO玻璃）；
第2步、透明顶电极表面制备若干条状透明导电凸棱，该凸棱与透明顶电极形成T型结构；本步骤中，将开有若干长条形窗口的掩模覆盖于平板式透明顶电极表面，并对掩模的窗口进行掺氟氧化锌的透明材料二次淀积，获得与透明顶电极导电薄膜材质相同（导电薄膜材质可以选用TCO、ITO等透明导电材料）的凸棱，使顶电极局部形成T型结构；本例中，同样采用磁控溅射法制备掺氟氧化锌的凸棱；
第3步、在透明顶电极表面逐次淀积厚度均匀的P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜，使P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜在凸棱对应区域向外凸起形成条状鼓包；其中，P型非晶硅薄膜、本征非晶硅薄膜、和N型非晶硅薄膜、采用等离子化学增强气相沉积仪进行的淀积，淀积厚度依次约为200nm 、0.7um、200nm；P型非晶硅薄膜中硼元素的掺杂浓度为1017～1019/cm3；N型非晶硅薄膜中磷元素的掺杂浓度为1017～1019/cm3；本例中透明导电过渡薄膜则通过磁控溅射法进行淀积，淀积厚度约为40-50nm；
第4步、在透明导电过渡薄膜表面淀积底电极，底电极与透明导电过渡薄膜的接触面形成若干与凸棱一一对应的弧形反射面；本例中底电极是通过磁控溅射铝在透明导电过渡薄膜上形成导电的铝薄膜。
可见，本发明制备工艺与现有薄膜电池生产工艺兼容，可利用现有设备进行生产，仅仅在制备过程中增加了凸棱的二次淀积步骤，在几乎不额外增加成本的前提下，提高了电池性能。
除上述实施例外，本发明还可以有其他实施方式。凡采用等同替换或等效变换形成的技术方案，均落在本发明要求的保护范围。

Claims (3)

1.一种太阳能电池，从上至下包括依次连接的透明顶电极、P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜、底电极，其特征在于：所述透明顶电极的下表面制有与其材质相同的若干条状凸棱，使顶电极局部形成T型结构，所述凸棱下方的P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜下表面向下凸起形成条状鼓包，对应位置的底电极与透明导电过渡薄膜的接触面具有与凸棱一一对应的条状弧形反射面；所述凸棱的高宽比为1：3～1：2，凸棱之间互相平行，凸棱的间距范围为：1-2um，高度范围为：100-300nm；所述P型非晶硅薄膜中硼元素的掺杂浓度为1017～1019/cm3的；所述本征非晶硅薄膜中无杂质掺杂，所述N型非晶硅薄膜中磷元素的掺杂浓度为1017～1019/cm3，所述P型非晶硅薄膜的沉积厚度范围为：180-220nm，本征非晶硅薄膜的沉积厚度范围为：0.5-1um，N型非晶硅薄膜的沉积厚度范围为：180-220nm。
2.根据权利要求1所述的太阳能电池，其特征在于：所述P型非晶硅薄膜、本征非晶硅薄膜、N型非晶硅薄膜、透明导电过渡薄膜的厚度均匀。
3.根据权利要求2所述的太阳能电池，其特征在于：所述透明顶电极为TCO玻璃，透明顶电极的导电薄膜和透明导电过渡薄膜为掺氟氧化锌或氧化铟硒的薄膜，所述底电极为铝或银材料制成的面状金属电极。
CN201710442032.0A 2013-08-02 2013-08-02 一种太阳能电池 Expired - Fee Related CN107331713B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710442032.0A CN107331713B (zh) 2013-08-02 2013-08-02 一种太阳能电池

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310332313.2A CN103367472B (zh) 2013-08-02 2013-08-02 一种t型顶电极背反射薄膜太阳电池
CN201710442032.0A CN107331713B (zh) 2013-08-02 2013-08-02 一种太阳能电池

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201310332313.2A Division CN103367472B (zh) 2013-08-02 2013-08-02 一种t型顶电极背反射薄膜太阳电池

Publications (2)

Publication Number Publication Date
CN107331713A CN107331713A (zh) 2017-11-07
CN107331713B true CN107331713B (zh) 2019-05-24

Family

ID=49368425

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201710441834.XA Expired - Fee Related CN107342331B (zh) 2013-08-02 2013-08-02 一种t型顶电极背反射薄膜太阳电池的生产工艺
CN201710442032.0A Expired - Fee Related CN107331713B (zh) 2013-08-02 2013-08-02 一种太阳能电池
CN201310332313.2A Expired - Fee Related CN103367472B (zh) 2013-08-02 2013-08-02 一种t型顶电极背反射薄膜太阳电池

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201710441834.XA Expired - Fee Related CN107342331B (zh) 2013-08-02 2013-08-02 一种t型顶电极背反射薄膜太阳电池的生产工艺

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201310332313.2A Expired - Fee Related CN103367472B (zh) 2013-08-02 2013-08-02 一种t型顶电极背反射薄膜太阳电池

Country Status (1)

Country Link
CN (3) CN107342331B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6664065B2 (ja) * 2015-03-31 2020-03-13 パナソニックＩｐマネジメント株式会社 太陽電池素子および太陽電池モジュール
CN106252513A (zh) * 2016-08-02 2016-12-21 天津工业大学 基于绒面光管理结构的钙钛矿太阳电池及其制备方法
CN106229411A (zh) * 2016-08-02 2016-12-14 天津工业大学 一种背光基底的钙钛矿太阳电池及其制备方法
US10418547B1 (en) 2018-06-14 2019-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode
CN109742163A (zh) * 2019-01-25 2019-05-10 武汉宇恩防伪技术有限公司 一种具有抗反射层的太阳能电池薄膜结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1218995A (zh) * 1997-10-29 1999-06-09 佳能株式会社 光电元件以及由其组成的组件
CN102064212A (zh) * 2009-11-12 2011-05-18 北京北方微电子基地设备工艺研究中心有限责任公司 一种非晶硅薄膜太阳能电池及制备方法
CN102298986A (zh) * 2010-06-28 2011-12-28 住友金属矿山株式会社 透明导电基板及制造方法、薄膜太阳能电池及制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612372A (ja) * 1984-06-14 1986-01-08 Toshiba Corp 光起電力装置
CN102473748B (zh) * 2009-07-01 2014-08-20 三菱电机株式会社 薄膜太阳能电池及其制造方法
JP2011258767A (ja) * 2010-06-09 2011-12-22 Sharp Corp 太陽電池
CN103367477A (zh) * 2012-03-30 2013-10-23 清华大学 太阳能电池

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1218995A (zh) * 1997-10-29 1999-06-09 佳能株式会社 光电元件以及由其组成的组件
CN102064212A (zh) * 2009-11-12 2011-05-18 北京北方微电子基地设备工艺研究中心有限责任公司 一种非晶硅薄膜太阳能电池及制备方法
CN102298986A (zh) * 2010-06-28 2011-12-28 住友金属矿山株式会社 透明导电基板及制造方法、薄膜太阳能电池及制造方法

Also Published As

Publication number Publication date
CN107342331B (zh) 2018-10-19
CN103367472A (zh) 2013-10-23
CN107342331A (zh) 2017-11-10
CN107331713A (zh) 2017-11-07
CN103367472B (zh) 2017-08-01

Similar Documents

Publication Publication Date Title
CN105895746B (zh) 具有叠层减反特性的晶体硅异质太阳电池及其制备方法
CN107331713B (zh) 一种太阳能电池
CN106601855A (zh) 一种双面发电异质结太阳能电池的制备方法
CN109004053A (zh) 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法
CN101447518A (zh) 一种背点接触异质结太阳能电池及其制造方法
CN105845747A (zh) 一种太阳能电池结构
CN102956723B (zh) 一种太阳能电池及其制备方法
CN208548372U (zh) 一种双结太阳能电池
CN101944541A (zh) 薄膜光伏电池及其制造方法
CN104332515B (zh) 一种以石墨烯作为导电材料的铜铟硒纳米晶硅薄膜太阳电池及其制备方法
CN102332499B (zh) 一种利用微颗粒制备双结构绒面透明电极的方法
CN110993718A (zh) 一种高转化效率的异质结电池及其制备方法
CN102364692A (zh) 双面受光的全钝化结构晶体硅太阳能电池及其制作方法
CN103367514B (zh) 一种弧形底电极薄膜太阳电池
CN101510568A (zh) 非晶硅/染料敏化叠层薄膜太阳电池及其制备方法
CN209104182U (zh) 非晶硅/晶体硅异质结太阳电池
CN108172640A (zh) 一种双面发电的碲化镉薄膜太阳能电池及其制备方法
CN201323204Y (zh) 一种背点接触异质结太阳能电池
CN103400868A (zh) 一种新型双层膜背面钝化太阳能电池结构
CN105870212A (zh) 一种晶体硅太阳能电池二维电极及其制备方法
CN102881727B (zh) 一种具有高导电性的减反射膜及其制备方法
WO2023103409A1 (zh) 太阳能电池及其制备方法
CN105355681A (zh) 一种溅射靶材及用该溅射靶材制作的cigs基薄膜太阳能电池
CN102280501B (zh) 一种硅基埋栅薄膜太阳能电池
CN113437161A (zh) 太阳能电池片及其制备方法和光伏组件

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190524

Termination date: 20190802