CN107293516B - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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Publication number
CN107293516B
CN107293516B CN201710228155.4A CN201710228155A CN107293516B CN 107293516 B CN107293516 B CN 107293516B CN 201710228155 A CN201710228155 A CN 201710228155A CN 107293516 B CN107293516 B CN 107293516B
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CN
China
Prior art keywords
wafer
modified layer
forming step
modified
front surface
Prior art date
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Active
Application number
CN201710228155.4A
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English (en)
Chinese (zh)
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CN107293516A (zh
Inventor
裵泰羽
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Disco Corp
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Disco Corp
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Publication of CN107293516A publication Critical patent/CN107293516A/zh
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Publication of CN107293516B publication Critical patent/CN107293516B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201710228155.4A 2016-04-12 2017-04-10 晶片的加工方法 Active CN107293516B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016079413A JP6640005B2 (ja) 2016-04-12 2016-04-12 ウエーハの加工方法
JP2016-079413 2016-04-12

Publications (2)

Publication Number Publication Date
CN107293516A CN107293516A (zh) 2017-10-24
CN107293516B true CN107293516B (zh) 2022-02-11

Family

ID=60085358

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710228155.4A Active CN107293516B (zh) 2016-04-12 2017-04-10 晶片的加工方法

Country Status (4)

Country Link
JP (1) JP6640005B2 (ko)
KR (1) KR102250209B1 (ko)
CN (1) CN107293516B (ko)
TW (1) TWI732824B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7105058B2 (ja) * 2017-12-05 2022-07-22 株式会社ディスコ ウェーハの加工方法
JP7058320B2 (ja) * 2018-03-14 2022-04-21 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
US10388526B1 (en) * 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US11450578B2 (en) 2018-04-27 2022-09-20 Tokyo Electron Limited Substrate processing system and substrate processing method
US11450523B2 (en) 2018-04-27 2022-09-20 Tokyo Electron Limited Substrate processing system with eccentricity detection device and substrate processing method
JP7081993B2 (ja) * 2018-06-19 2022-06-07 株式会社ディスコ 被加工物の加工方法
JP7088768B2 (ja) * 2018-07-24 2022-06-21 株式会社ディスコ ウェーハの分割方法
JP7118804B2 (ja) * 2018-08-17 2022-08-16 キオクシア株式会社 半導体装置の製造方法
WO2020129734A1 (ja) 2018-12-21 2020-06-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2020129732A1 (ja) 2018-12-21 2020-06-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7233816B2 (ja) 2019-02-19 2023-03-07 株式会社ディスコ ウェーハの加工方法
CN113518686B (zh) 2019-03-28 2023-05-26 东京毅力科创株式会社 处理装置和处理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010003817A (ja) * 2008-06-19 2010-01-07 Tokyo Seimitsu Co Ltd レーザーダイシング方法及びレーザーダイシング装置
CN102481666A (zh) * 2009-08-21 2012-05-30 浜松光子学株式会社 激光加工方法及芯片
JP2014011445A (ja) * 2012-07-03 2014-01-20 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014078556A (ja) * 2012-10-09 2014-05-01 Disco Abrasive Syst Ltd ウェーハの加工方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165850A (ja) 2005-11-16 2007-06-28 Denso Corp ウェハおよびウェハの分断方法
JP5394172B2 (ja) 2009-09-03 2014-01-22 株式会社ディスコ 加工方法
JP5625522B2 (ja) 2010-06-16 2014-11-19 豊田合成株式会社 レーザ加工方法
JP5930811B2 (ja) 2011-11-18 2016-06-08 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP6053381B2 (ja) 2012-08-06 2016-12-27 株式会社ディスコ ウェーハの分割方法
JP6189066B2 (ja) * 2013-03-27 2017-08-30 株式会社ディスコ ウエーハの加工方法
JP6301726B2 (ja) 2014-05-07 2018-03-28 株式会社ディスコ 光デバイスの加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010003817A (ja) * 2008-06-19 2010-01-07 Tokyo Seimitsu Co Ltd レーザーダイシング方法及びレーザーダイシング装置
CN102481666A (zh) * 2009-08-21 2012-05-30 浜松光子学株式会社 激光加工方法及芯片
JP2014011445A (ja) * 2012-07-03 2014-01-20 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014078556A (ja) * 2012-10-09 2014-05-01 Disco Abrasive Syst Ltd ウェーハの加工方法

Also Published As

Publication number Publication date
KR20170116954A (ko) 2017-10-20
TWI732824B (zh) 2021-07-11
TW201737329A (zh) 2017-10-16
CN107293516A (zh) 2017-10-24
JP6640005B2 (ja) 2020-02-05
JP2017191825A (ja) 2017-10-19
KR102250209B1 (ko) 2021-05-07

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