CN107267091A - 用于制备半导体封装的粘合剂组合物及粘合片材 - Google Patents

用于制备半导体封装的粘合剂组合物及粘合片材 Download PDF

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Publication number
CN107267091A
CN107267091A CN201710495039.9A CN201710495039A CN107267091A CN 107267091 A CN107267091 A CN 107267091A CN 201710495039 A CN201710495039 A CN 201710495039A CN 107267091 A CN107267091 A CN 107267091A
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adhesive
adhesive composition
weight
chip
adhesive sheet
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CN201710495039.9A
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Inventor
金成洙
金镇源
申光浩
赵庆南
黄教圣
丁畅范
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KCC Corp
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KCC Corp
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Publication of CN107267091A publication Critical patent/CN107267091A/zh
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Abstract

本发明涉及一种能够在制备半导体器件的工序中使用的粘合剂组合物及包含该组合物，并加工成片材形状的粘合材料，更详细地，涉及一种粘合剂组合物及包含该组合物的粘合片材，所述粘合剂组合物在半导体制备工序中粘合在晶片的截面上，用于芯片和基板或芯片和芯片的粘合，特别是在高温粘合时，其流动性得到增加，从而对凹凸及金属布线等构件具有优异的嵌入性，并提高与支撑构件间的界面粘合性，即使在高温/高湿度条件下也能够确保半导体元件的可靠性。

Description

用于制备半导体封装的粘合剂组合物及粘合片材
本申请是申请日为2010年11月8日、中国专利申请号为201080069397.X且发明名称为“用于制备半导体封装的粘合剂组合物及粘合片材”的中国专利申请的分案申请，要求享有KR10-2010-0095438的优先权。
技术领域
本发明涉及一种能够在制备半导体器件的工序中使用的粘合剂组合物及包含该组合物，并加工成片材形状的粘合材料，更详细地，涉及一种粘合剂组合物及包含该组合物的粘合片材，所述粘合剂组合物在半导体制备工序中粘合在晶片的截面上，用于芯片和基板或芯片和芯片的粘合，特别是在高温粘合时，其流动性得到增加，从而对凹凸及金属布线等构件具有优异的嵌入性，并提高与支撑构件间的界面粘合性，即使在高温/高湿度条件下也能够确保半导体元件的可靠性。
背景技术
对晶片进行电路蚀刻工序之后的半导体制备工序包括：切割工序，其用于将晶片切割成芯片；扩张及拾取(pick-up)工序，其用于将切割的芯片重组为一个个芯片；焊接工序，其用于将拾取工序中重组的芯片装配在基板上；金属布线工序，其用于电气连接芯片和基板；及环氧模制工序，其用于保护芯片。在如上所述的工序中，为了易于进行晶片的切割及芯片的粘合工序，使用用于保护晶片的保护用粘附片材和能够附着芯片的粘合剂或粘合片材。
作为将制备好的芯片附着在基板上的现有方法，一直在使用以下方式，即，将液状环氧树脂组合物以一定形状涂布在准备好的引线框或软性线路板(FPCB)上，使用用于保护晶片的粘附片材，装配预先加工好的经过重组芯片。但是涂布液体环氧树脂组合物的工序难以控制涂布厚度的均匀性，在进行附着工序时，附着的压力容易导致液体组合物的渗漏。虽然通过调节液体粘合剂组合物的触变指数能够控制其流动性，但难于应用在多层芯片的制备中，因此仅局限在单一芯片的制备上。
为了解决上述液状粘合剂所产生的问题，人们提出了将液状粘合剂重整为合适的树脂组合物，提供一种薄片状粘合剂方法。所述薄片状粘合剂的使用方法如下：薄片状粘合剂被制备成与芯片相类似大小的沟纹(rill)状后，将该粘合片材切割成芯片大小，使用能够焊接的特殊设备进行切割，并附着在基板上后，附着重组后的芯片。但是，这种工序需要用于切割粘合片材并进行粘附的特殊设备，还需要实施附加工序，因此其越来越不被利用。
在现有的半导体芯片附着工序中，主要使用以下方法：通过将粘合片材预先附着在晶片的背面来进行切割工序，从而使芯片和粘合片材为一体化，获得各个芯片。这种粘合片材通常可以提供与粘附剂为附着状态的一体式，这种情况下，与粘附片材附着在晶片的背面进行切割的工序相反，在粘合片材的背面层压粘附片材，从而在具备一体式的状态下，附着在晶片上，之后实施一系列的工序。
如此地，将粘合片材和粘合片材制备成一体式，在半导体制备工序中附着在晶片的背面，以此简化从晶片的切割到芯片焊接的工序，这种方法在以下专利中有所公开。例如，韩国公开专利公报第10-2006-0021337号、韩国授权专利第10-0826420号、韩国授权专利第10-0646069号、韩国授权专利第10-0845092号等。
在最近的传统的半导体制备工序中，作为用于提高半导体封装的集成度的方案，一直在使用以下方法：即，在一个空间将半导体的芯片垂直地堆叠多层的堆叠(Stack)法。通过应用半导体元件的层压技术和使用适合这类技术的粘合材料，在由引线框或软性线路板构成的封装组件上，通过层压两层以上的芯片可以提高集成度，在将凸起用于电连接器的CSP(芯片级封装，Chip Scale Package)中，则使用在具有焊接凸起的基板上，垂直地层压芯片来提高集成度的技术。此外，需要通过层压多层数个芯片来提高集成度时，作为用于有效使用芯片空间的方案，主要使用将相同面积的芯片和芯片垂直层压的方式。为了层压多层相同大小的芯片，使用如下技术：即，将芯片附着在引线框或板上后，实施用于电气连接芯片和基板的金属布线操作，或者使用预先装配在芯片背面的金属凸起，附着在基板上来完成对元件的电气连接，并在上述芯片的上端继续层压多层以相同大小准备好的芯片。为了确保半导体元件的可靠性，使芯片在进行粘合工序时具有充分的流动性，在这种一系列工序中所使用的粘合片材在嵌入时，芯片和芯片或芯片和基板之间存在的金属布线或凸起等构件中，不能产生气泡或使构件受损，而且在附着之后，通过固化工序要表现出高的界面粘合力。
现有的用于半导体的粘合片材通过以下方式制备，并用于一般的芯片附着工序中。为了制备在常温下能够处理的片状粘合剂，在耐热粘合性优异的固体环氧树脂组合物中，配合用于维持挠性的热塑性橡胶成分，并用适当的混合用溶剂进行稀释，再进行陶艺工序，从而制成片材状。
但是，这种常规的粘合片材在粘合相同大小的芯片的工序中，能够充分地嵌入金属布线及金属凸起的流动性不足，存在以下问题，即，在粘合时产生气泡或在附着面上排列的布线受损而发生不良的情况。此外，还存在如下问题，即，热可塑性橡胶成分和环氧树脂组合物间的相容性差，会产生微小的相分离，在长期暴露在高温/高湿度条件下时，会因橡胶成分的老化而导致粘合力降低。特别是在芯片的粘合面上，除了构成用于提供半导体器件的特性而生成的引线框、布线、凸起等金属成分以外，还同时露出电路嵌入板及用于保护芯片而生成的阻焊(Solder Resist)、钝化(Passivation)等多种有机材料，而这些通常具有比金属的还低的表面能，因此在对使用粘合片材的芯片进行附着时，会降低粘合力。
发明内容
要解决的技术问题
本发明的目的在于，解决如上所述的现有技术中的问题，并以提供一种粘合剂组合物及包含该组合物的粘合片材为技术问题。本发明提供的粘合剂组合物及包含该组合物的粘合片材，对暴露在半导体器件的粘合面上的凹凸及金属布线等构件具有优异的嵌入性，并提高与支撑构件间的界面粘合性，即使在高温/高湿度条件下也能够确保半导体元件的可靠性。
技术方案
为了实现上述目的，本发明提供一种粘合剂组合物，其特征在于，其包含(A)共聚的丙烯酸酯化合物，其含有一种以上的反应性基团；(B)热固化性环氧混合物；(C)固化剂；(D)填料；以及(E)固化促进剂；上述成分(A):(B)的重量比为95:5～65:35，上述成分(B)中包含有一种以上在150℃下熔融粘度为0.1Pa·s以下的环氧树脂；以上述成分(A)+(B)+(C)的总量100重量份计，上述成分(D)的量为10～80重量份；以上述成分(A)+(B)+(C)的总量100重量份计，上述成分(E)的量为0.1～1.4重量份。
根据本发明的另一个面，提供一种用于制备半导体的粘合片材，其特征在于，其包含本发明的粘合剂组合物的涂布层。
有益效果
在制备半导体工序中使用本发明的粘合剂组合物及粘合片材，可以提高与支撑构件间的界面粘合性，即使在高温/高湿度条件下也能够维持粘合特性，从而具有优异的可靠性，由于其具有的高温流动性，从而对于能够暴露在半导体器件的粘合面上的构件具有优异的嵌入性。
具体实施方式
下面按照不同的成分，分别进行详细说明。
(A)包含一个以上反应性基团的共聚的丙烯酸酯化合物
本发明的粘合剂组合物中所包含的共聚的丙烯酸酯化合物中，含有一个以上的反应性基团(例如，极性基团)，由此，其表面能得到适当地调节，能够实现与其它化合物的分子间交联或在自身分子内的交联，从而提高组合物的粘合性能，并提高与半导体支撑构件中表面能低的有机材料之间的界面粘合性。在测定共聚的丙烯酸酯化合物成分(A)与水之间的接触角时，优选的表面能为40dyne/cm～50dyne/cm，优选的重均分子量为300,000～150,000，优选的玻璃化转变温度为-20℃～50℃。
优选地，能够包含在共聚的丙烯酸酯化合物成分(A)中的反应性基团选自丙烯腈基、环氧基、羟基及羧基中的一种以上。
具体地，在共聚的丙烯酸酯化合物中，在分子内包含环氧基和羟基的树脂可以例举如长濑产业株式会社的SG-PT115(环氧值为0.21eq/kg，羟基值为20mgKOH/g，Mw 80,000)、SG-PT134(环氧值为0.21eq/kg，羟基值为30mgKOH/g，Mw 80,000)、SG-PT135(环氧值为0.21eq/kg，羟基值为400mgKOH/g，Mw 80,000)等，在分子内含有羧基和丙烯腈基的共聚的丙烯酸酯化合物可以例举如Zeon公司的DN631(丙烯腈33.5％，密度0.99)及Zeon公司的NBR N34(丙烯腈27％，密度0.98)，在分子内含有丙烯腈基的共聚的丙烯酸酯化合物可以例举如现代石油化学SEETEC系列等，但并不限定于此。
在本发明的粘合剂组合物中，上述共聚的丙烯酸酯化合物成分(A)：后述的环氧混合物成分(B)的重量比为95:5～65:35，更优选地，(A):(B)的重量比为90:10～70:30。成分(A)的重量比如果小于上述范围，则粘合剂组合物变得过硬，从而在进行粘合片材的陶艺或切割工序时，容易破碎，如果超过上述范围使用，则在粘合片材的附着及固化之后，无法保障充分的粘合力，在可靠性上会存在问题。
(B)热固化性环氧混合物
本发明的粘合剂组合物包含的环氧混合物例如包括双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、脂环式环氧树脂、链状脂肪族环氧树脂、苯酚酚醛型环氧树脂、甲酚醛环氧树脂、双酚A甲醛酚醛环氧树脂、双酚缩水甘油醚化合物、萘二酚缩水甘油醚化合物、酚类缩水甘油醚化合物、醇类缩水甘油醚化合物及它们的烷基取代物、卤化物或氢化物、多官能环氧树脂、含杂环的环氧树脂等。可以使用通常已知的一种以上，或与后述的150℃下熔融粘度为0.1Pa·s以下(例如，0.001～0.1Pa·s)的一种以上的环氧树脂的混合物。
更具体地，作为市售的产品，可以使用例如EPICOAT807、EPICOAT815、EPICOAT825、EPICOAT827、EPICOAT828、EPICOAT834、EPICOAT1001、EPICOAT1002、EPICOAT1003、EPICOAT1055、EPICOAT1004、EPICOAT1004AF、EPICOAT1007、EPICOAT1009、EPICOAT1003F、EPICOAT1004F(以上为日本环氧树脂株式会社制，商品名)、YD-011、YD-012、YD-013K、YD-014、YD-017、YD-112、YD-113、YD-114、YD-115、YD-127、YD-128(以上为国都化学株式会社制，商品名)、SE-187、SE-187P(以上为Shin-wha T&C公司制，商品名)等双酚A型环氧树脂；YDF-161、YDF-162、YDF-170(国都化学株式会社制，商品名)、SE-187、SE-187P(以上为Shin-wha T&C公司制，商品名)等双酚F型环氧树脂；EPPN-201、EPPN-501、EPPN-501HY、EPPN-502(以上为日本化药株式会社制，商品名)、YDPN-631、YDPN-636、YDPN-638(以上为(国都化学株式会社制，商品名)等苯酚酚醛型环氧树脂、YDCN-500-1P、YDCN-500-4P、YDCN-500-5P、YDCN-500-7P、YDCN-500-10P、YDCN-500-80P(以上为(国都化学株式会社制，商品名)、EOCN-102S、EOCN-103S、EOCN-104S、EOCN-1012、EOCN-1020、EOCN-1025、EOCN-1027(以上为日本化药株式会社制，商品名)等甲酚醛型环氧树脂等。
在环氧混合物成分(B)中包含有一种以上的在150℃下熔融温度为0.1Pa·s以下(例如，0.001～0.1Pa·s)的环氧树脂。这种环氧树脂可以例举如Dong-do化学制品公司的YDC-1312(环氧当量为180g/eq、150℃下的粘度为0.01Pa·s)、YSLV-80XY(环氧当量为195g/eq、150℃下的粘度为0.01Pa·s)、YSLV-120TE(环氧当量为245g/eq、150℃下的粘度为0.1Pa·s)、Yukacel公司的YX-4000(环氧当量为192g/eq、150℃下的粘度为0.005Pa·s)、日本化药公司的XD-1000-2L(环氧当量为240g/eq、150℃下的粘度为0.05Pa·s)、CER-3000-L(环氧当量为233g/eq、150℃下的粘度为0.03Pa·s)等，但不限定于此。
对环氧混合物成分(B)中所含的在150℃下熔融温度为0.1Pa·s以下的环氧树脂的量没有特别的限制，以环氧混合物成分(B)100重量％计，优选5～50重量％的环氧树脂的量，但并不限定于此。
根据本发明的优选具体例，在包含本发明的粘合剂组合物的粘合片材中，可以将150℃下，熔融粘度为0.1Pa·s以下的环氧树脂包含在环氧混合物成分(B)中，所包含的量为：使流变仪(A&D公司,RPT-3000W)在测定高温流动性时，在80℃和120℃下分别测定的阻尼系数(Log.Damping ratio)的比值为3.0～5.0，在120℃下的阻尼系数(Log.damping ratio)为0.01～0.1。
对于包含本发明粘合剂组合物的粘合片材，如果在80℃/120℃下的阻尼比小于3.0，则在高温下的流动性过高，在粘合芯片和基板或芯片和芯片时，难以维持一定的上下部之间的间隙并进行附着，如果在120℃下的阻尼比超过0.1，则与半导体支撑构件附着时无法具有充分的流动性，从而对暴露在粘合面上的凹凸或金属布线不能具有充分的嵌入性。通过RPT-3000W进行表征的粘合片材物理性质范围的意义，将在之后的粘合片材的评价法中进行说明。
在本发明的粘合剂组合物中，上述共聚的丙烯酸酯化合物成分(A):环氧混合物成分(B)的重量比为95:5～65:35，更优选为(A):(B)的重量比为90:10～80:20。如果成分(B)的重量比超过上述范围使用时，粘合剂组合物会变得过硬，在进行粘合片的陶艺或切割工序时，容易破碎，相反如果小于上述范围使用时，则在粘合片材的附着及固化之后，无法保障充分的粘合力，在可靠性上存在问题。
(C)固化剂
为了环氧树脂的固化，在本发明的粘合剂组合物中使用固化剂。
作为这种固化剂，可以使用现有公知的固化剂，例如，可以从包括酚类化合物、胺化合物、酸酐的公知的用于环氧树脂的固化剂化合物中选择使用。优选具有2个以上的羟基且羟基当量为100g/eq～300g/eq的酚醛树脂，例如对苯酚酚醛树脂的使用没有特别的限制。
本发明的粘合剂组合物中的固化剂使用量优选为与上述环氧混合物(B)的当量比为0.8～1.3，更优选为0.9～1.1。如果固化剂的使用量过于脱离上述范围，则会残留未反应环氧树脂或固化剂树脂，在高温中被固化，从而降低可靠性。
(D)填料
为了调节粘合片材的耐热性、高温流动性及工序操作性等，在本发明的粘合剂组合物中包含填料。
对于可用于本发明粘合剂组合物的填料没有特别的限制，例如可以使用平均粒子大小为10nm～10μm且为球状的二氧化硅、氧化铝、银、镀金珠、硅珠、炭黑、氢氧化铝、氢氧化镁、氮化硼、二氧化钛、陶瓷等粒子。优选使用在粘合剂组合物内分散性良好、在高温下有利于提供流动性的球状二氧化硅。
以上述成分(A)+(B)+(C)的总量100重量份计，本发明的粘合剂组合物中所含的填料(D)的量为10～80重量份，更优选为20～60重量份。当填料的使用量，以成分(A)+(B)+(C)的总量100重量份计，小于10重量份的情况下，粘合片材的硬度会降低，容易发生在高温下的热应力导致的变形，当大于80重量份的情况下，粘合片材的脆性会增强，在工序中容易断裂，而且由于与粘附薄膜膜之间的粘着力降低，存在工序操作性降低的问题。
(E)固化促进剂
为了提高固化速度，在本发明的粘合剂组合物中使用固化促进剂。
对于可用于本发明的粘合剂组合物中的填料没有特别的限制，只要是在固化条件下的温度下，能够缩短粘合剂组合物的固化时间，都可以使用。优选使用在粘合片材的制备温度条件下，反应性低，且在120℃～180℃的固化温度范围内反应性高的化合物。例如，作为目前市售的产品有Sa-kuk化学制品公司的2MZ-A、C11Z-A、2MA-OK、2PHZ、2P4MHZ等，Hoko化学制品公司的TPP、TBP、TBP、TPP-K、TPP-MK、TPPO、DPPE、DPPB等。
以上述成分(A)+(B)+(C)的总量100重量份计，本发明的粘合剂组合物中所含的固化促进剂(E)的量为0.1～1.4重量份，更优选为0.2～1.0重量份。以成分(A)+(B)+(C)的总量100重量份计，如果固化促进剂的使用量小于0.1重量份的情况下，在层压芯片后，无法在固化工序中得到充分的硬度，在之后的芯片层压时，由于热和负载而发生下部芯片的晃动，从而导致不良，当超过1.4重量份的情况下，由于粘合片材制备工序中产生的热会引起一部分副反应，而且在常温下保存产品时，对长期保存产品产生不良影响。
本发明的粘合剂组合物除了上述成分之外，还可以进一步包含适当量的用于半导体工序的粘合剂组合物中通常所使用的成分，例如，丙酮、甲乙酮、甲苯、乙酸乙酯等溶剂和粘附增强剂、偶联剂、抗静电剂、快速固化剂、热固化助剂、粘着力增强剂、润湿改善剂、平整剂等。在本发明的一个优选具体例中，通过添加具有能够与树脂混合物及粘合面的两侧结合的官能团的偶联剂，从而有助于提高弹性率和耐热性，以组合物总100重量份计，可以使用3.0重量份以内的偶联剂。
对本发明的粘合剂组合物的制备方法没有特别的限制，可以使用通常的用于制备粘合剂组合物的装置，由通常的工序制备。根据本发明的一个具体例，使用玻珠研磨机等混合装置，在室温至适当升温的温度下，使上述进行说明的成分进行分散及混合，从而制备本发明的粘合剂组合物。
根据本发明的另一方面，提供一种用于制备半导体的粘合片材，其特征在于，其包含上述说明的本发明的粘合剂组合物的涂布层。
根据本发明的用于制备半导体的粘合片材，其特征在于，包含上述本发明的粘合剂组合物的涂布层，此外根据膜结构上的需要可以进一步包含一个以上的基底(膜)层(也被称为释放(releasing)(膜)层或保护(膜)层)及粘附(膜)层。根据本发明的一个具体例的用于制备半导体的粘合膜可以具有基底层+粘合剂组合物层；基底层+粘合剂组合物层+基底层；基底层+粘附剂层+粘合剂组合物层；基底层+粘附剂层+粘合剂组合物层+基底层等层的结构，但不限定于此。
对于能够包含在本发明的用于制备半导体的粘合片材的基底层材质，并无特别的限制，可以使用制备半导体的粘合片材的基底薄膜时通常使用的物质，例如聚对苯二甲酸乙二醇酯、聚烯烃类或聚氯乙烯类物质等。此外，作为粘附层，可以使用制备半导体粘合片材时通常使用的粘附性物质，例如有包括光敏低聚物的丙烯酸类物质。
在本发明的用于制备半导体的粘合片材中，对上述粘合剂组合物的涂布层的干燥厚度没有特别的限制，优选为10～200μm的厚度。粘合剂组合物的涂布层的干燥厚度如果小于10μm，粘合效果会不充分，如果超过200μm，在涂膜干燥过程中，由于残留挥发物导致涂布过程不易进行，在粘合工序中，由于高的层差(stacking level)，在高温粘合时，会发生粘合剂从侧面渗出的不良情况。粘合剂组合物优选在125℃下、60分钟以内表现出50％的固化度，粘合剂组合物的涂布层内的残留挥发物优选为1重量％以下。
对本发明的粘合片材的制备方法没有特别的限制，可以使用通常制备多层粘合片材时使用的设备，用通常的工序来制备。根据本发明的一个具体例，可以通过以下方式制备粘合片材，即，根据需要，使用适合的有机溶剂稀释本发明的粘合剂组合物，混合成易于制备涂膜的适当的浓度后，涂布在聚对苯二甲酸乙二醇酯等基底膜上，并进行干燥。作为上述涂布及干燥方式，只要能够形成涂膜，可以使用任何方式。例如可以使用棒涂(barcoating)、图片涂布(gravia coating)、逗号涂布(comma coating)、逆转辊涂布(roll-reverse coating)、辊-刮刀涂布(roll-knife coating)、模涂布(die coating)、唇涂布(lip coating)等。
如上所述的本发明的用于制备半导体的粘合片材，由于其具有优异的高温流动性，因此对于暴露在粘合面上的凹凸及金属布线等构件具有优异的嵌入性，与半导体支撑构件之间的界面粘合性得到提高，即使在高温/高湿度条件下，也能够确保半导体器件的可靠性。
下面，通过实施例对本发明更加具体地说明。但是，这些实施例只是为了帮助理解本发明，不能理解成本发明的范围被限定在这些实施例中。
实施例1
在280.5g的反应性共聚的丙烯酸酯化合物(A1)中，加入作为环氧混合物的37.4g的甲酚醛环氧树脂(B1)和14.0g的双酚F型环氧树脂(B2)的混合物，进行混合。在此，追加添加25.7g的作为固化剂(C)的苯酚酚醛树脂，使得所述固化剂(C)与上述环氧混合物的当量比为1.0。
以上述准备的最终混合物100重量份计，依次地投入45重量份的作为填料的球状二氧化硅(D1)、0.3重量份的固化促进剂(E)及1.5重量份的偶联剂(F)，并充分地搅拌。搅拌时，为了使组合物具有适当的粘性及溶解度，追加投入甲乙酮有机溶剂，所投入的量使组合物内固体成分总重量为30％～35％。再次使用玻珠研磨机将完成预搅拌的组合物充分分散后，以60μm的干燥厚度涂布在单面被释放处理过的38μm的聚对苯二甲酸乙二醇酯释放膜上，从而制备粘合片材。
在下述评价方法中用于评价流变测试的样品，通过以下方式来准备，即，在60℃下层压所制得的粘合片材，使其厚度为200μm。
实施例2～7
根据表1所示的组成，用与实施例1相同的方法制备粘合剂组合物及粘合片材。
表1
A1：SG-PT115(日本长濑公司，环氧值为0.21eq/kg、羟基值为20mgKOH/g)
A2：SG-PT134(日本长濑公司，环氧值为0.21eq/kg、羟基值为30mgKOH/g)
A3：SG-PT135(日本长濑公司，环氧值为0.21eq/kg、羟基值为40mgKOH/g)
B1：YDCN-500-4P(国都化学株式会社，环氧当量为200g/eq、软化点为62℃)
B2：YSLV-80XY(Dong-do化学制品公司，环氧当量为195g/eq、150℃粘度为0.01Pa·s)
B3：YX-4000(Yukacel公司，环氧当量为192g/eq、150℃粘度为0.005Pa·s)
C：HF-1M(Meiwha公司，羟基当量为106g/eq、软化点为84℃)
D1：SO-31R(Datsumori公司，平均粒径为1.24μm、S.S.A为4.68m2/g)
D2：FB-3SDX(Denka公司，平均粒径为3.3μm、S.S.A为3.9m2/g)
E：2MAOK-PW(Sa-kuk化学制品公司，平均粒径为2μm、熔点为260℃)
F：KBM-303(ShinEtsu，环氧当量为222g/eq、密度为1.06)
(A系列：反应性共聚丙烯酸酯化合物，B系列：环氧树脂，D系列：填料)
比较例1～9
根据表2所示的组成，用与实施例1相同的方法制备粘合剂组合物及粘合片材。
表2
R1：KNB 40M(Kum-ho石油化学公司，丙烯腈-丁二烯橡胶，丙烯腈为41％、门尼粘度为(ML+4，100℃)60)
R2：KNB 20LM(Kum-ho石油化学公司，丙烯腈-丁二烯橡胶，丙烯腈为28％、门尼粘度为(ML+4，100℃)50)
通过下述评价方法对上述实施例及比较例中制备的粘合片材的物理性质进行评价。
表面能
为了评价实施例中所使用的反应性共聚丙烯酸酯化合物及比较例中所使用的丙烯腈-丁二烯橡胶的表面能，将每个制备的粘合剂组合物涂布在扁平而硬的支撑板上，使其具有均匀的涂膜厚度，并使用接触角测定装置(表面电化学公司，SEO300A)来测定与水的表面能。
粘合强度
根据JIS Z 0237标准及KSA 1107标准(胶布及粘附片材的试验方法)，使用万能试验机实施90°剥离强度试验来测定粘合力。用于测定粘合强度的样品按照以下方式准备。将粘合片材的两面在65℃下，使用1mil厚度的聚酰亚胺膜(SKC公司，IN70)进行加热压缩后，制备成宽度为10mm、长度为150mm的样品，并在试验速度为50mm/min的条件下进行评价。
层裂特性
使用胶带固定装置(tape-mounting equipment)(Dynatech公司，DT-MWM 1230A)，在65℃下使用橡胶辊筒对实施例及比较例中制备的粘合片材进行1次往返压制，与形成有图案的8英寸的晶片层压。对完成层压工序的样品，观察是否在其晶片和粘合片材之间产生气泡，将气泡产生占整体面积的5％以上的用×，小于5％的用○区分表示。
高温流动性及固化特性
使用作为测定高分子树脂的流变性装置的流变振动仪(AND公司，RPT-3000W)，在从25℃到150℃的加热条件下，测定实施例及比较例中制得的粘合片材的根据流体流动性的阻尼系数，评价高温流动性，固化特性在125℃，60分钟的等温条件下，通过测定粘合片材的根据相变的振荡周期(Oscillation Period)来确认。
具体地，将准备好的涂膜厚度为200μm的粘合片材放置在流变振动仪的加热平板上，将管(RBP020)或刀(RBE130)状的探针浸渍到粘合片材中。之后，在上述测定条件下，以一定的力摆动探针，随着粘合层内部的流体特性改变，探针摆动受到影响，通过由此改变的摆的周期、振幅和波数的特性来确定高温流动性及固化特性。上述评价条件下的固化特性由摆周期的初始值和最终值的变化率(％)计算得到，高温流动性由下述数学式1所示的阻尼系数计算得到。在分别制得的粘合片材中，120℃下log阻尼系数为0.1以下，且80℃/120℃下阻尼比例为3.0以上的情况下，表示为○，120℃下log阻尼系数为0.1以下或在80℃/120℃下阻尼比例为2.0以下的情况下，表示为△，将其它情况表示为×。
数学式1
Δlog阻尼系数＝[ln(A1/A2)+ln(A2/A3)+…+ln(An/A(n+1))]/n
上式中A1为正弦波中的第一个振幅值，A2为第二个振幅值，An为第n个振幅值，n为总波数(Wave number)。
抗剪强度
将在实施例及比较例中制得的粘合片材粘合在已形成图案及钝化的8英寸200μm晶片的背面，然后使用切割装置(Disco公司，DFD6361)将芯片切割成2mm×2mm大小后，再使用芯片贴装(Die Attach)装置(Secron公司，SDB-30US)，在120℃、0.3Mpa、3秒的附着条件下进行双层层压，并在175℃下固化2小时，从而制得用于测定抗剪强度的样品。此外，将所制得的样品的一部分，在85℃、相对湿度为85％的恒温槽中单独地存放24小时，从而准备暴露在高温/高湿度下的样品。使用最新金线拉力测试仪(bonding tester)(DAG公司，DAGE-4000PXY)对上述制得的样品进行抗剪强度的测定，并比较其值。
此外，在上述条件下评价10次抗剪强度时，对表现出剪切破坏的面上粘合层开裂的内聚破坏行为的样品进行计数，将其用％表示。
金属布线的嵌入性
作为半导体芯片与基板之间的金属布线，在芯片上部有金属丝布线，所述金属丝布线距离芯片有50μm，使用芯片贴装装置(Secron公司，SDB-30US)，在130℃、0.5MPa、1秒的条件下，在半导体芯片上加热附着第二层芯片，所述第二层芯片附着有粘合片材，然后在170℃下，固化2小时制得层压芯片。对制得的层压芯片的切割面进行研磨，观察是否存在布线的损伤，以及周围是否产生直径为5μm以上的气泡。测定结果区分成如下情况来表示，即，对布线产生损伤时表示为×，产生气泡时表示为△，良好的情况表示为○。
耐热收缩性
将实施例及比较例中制得的粘合片材制成干燥厚度为60μm、大小为100mm×100mm的粘合片材，然后将这些准备好的粘合片材放置在单面经过释放处理的聚对苯二甲酸乙二醇酯膜上，在175℃固化条件下放置2小时后，从底面测定并记录由热累积而收缩变形时扭曲上升的高度。
防潮性能
将使用实施例及比较例中制得的粘合片材接合的双层芯片，在121℃、100％的相对湿度和两个大气压的条件(高压炉测试，PCT:Pressure Cooker Test)下，维持72小时后，确认是否存在粘合面的剥离，将良好的表示为○，产生剥离的表示为×。
通过上述评价方法得到的结果中的表面能及粘合强度如表3所示，将用实施例及比较例制得的粘合片材的评价结如表4及表5所示。
表3
表4
抗剪强度1)：使用在175℃下，固化2小时制得的样品
抗剪强度2)：使用在175℃下，固化2小时后，在85℃/85％的相对湿度下，维持24小时制得的样品
表5
如表3的结果可知，在实施例中所使用的反应性共聚丙烯酸酯化合物与比较例中所使用的橡胶成分相比，表现出高的表面能及粘合强度，由此，在使用这种反应性共聚丙烯酸酯的粘合片材中，在约60℃左右的安装条件下，与形成半导体支撑构件的有-无机构件之间的初始附着力得到提高。
如表4和表5的实施例及比较例的试验结果可知，本实施例的所有粘合片材在所有评价项目中均表现出优异的物理性质，而比较例却没有表现出优异的物理性质。

Claims (7)

1.一种用于制备半导体制造用粘合片材的粘合剂组合物，其特征在于，其包含：
(A)共聚的丙烯酸酯化合物，其含有环氧基和羟基；
(B)热固化性环氧混合物；
(C)固化剂；
(D)填料；以及
(E)固化促进剂；
其中，
所述成分(A):(B)的重量比为95:5～65:35；
所述成分(B)中包含有一种以上的在150℃下熔融粘度为0.1Pa·s以下的环氧树脂；
以所述成分(A)+(B)+(C)的总量100重量份计，所述成分(D)的量为10～80重量份；
以所述成分(A)+(B)+(C)的总量100重量份计，所述成分(E)的量为0.1～1.4重量份。
2.根据权利要求1所述的粘合剂组合物，其特征在于，在测定所述共聚的丙烯酸酯化合物(A)与水的接触角时，所述共聚的丙烯酸酯化合物(A)的表面能为40dyne/cm～50dyne/cm。
3.根据权利要求1所述的粘合剂组合物，其特征在于，所述共聚的丙烯酸酯化合物(A)的羟基值为20-40mgKOH/g。
4.根据权利要求1所述的粘合剂组合物，其特征在于，所述共聚的丙烯酸酯化合物(A)的重均分子量(Mw)为30,000-100,000。
5.根据权利要求1所述的粘合剂组合物，其特征在于，以环氧混合物(B)100重量％计，包含在环氧混合物(B)中的环氧树脂的量为5～50重量％，所述环氧树脂在150℃下的熔融粘度为0.1Pa·s以下。
6.根据权利要求1所述的粘合剂组合物，其特征在于，所述固化剂(C)和环氧混合物(B)的当量比为0.8～1.3。
7.一种用于制备半导体的粘合片材，其特征在于，其包含权利要求1～6中任一项所述的粘合剂组合物的涂布层。
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Cited By (1)

* Cited by examiner, † Cited by third party
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CN111129336A (zh) * 2018-10-30 2020-05-08 利诺士尖端材料有限公司 有机电子装置用密封材料

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KR102357279B1 (ko) 2019-06-10 2022-01-28 주식회사 엘지화학 반도체 회로 접속용 접착제 조성물 및 이를 포함한 접착 필름
KR102216726B1 (ko) * 2019-10-02 2021-02-16 한화솔루션 주식회사 커버레이용 접착제 조성물 및 이를 포함하는 fpcb용 커버레이
KR102259563B1 (ko) * 2019-10-02 2021-06-01 한화솔루션 주식회사 커버레이용 접착제 조성물 및 이를 포함하는 fpcb용 커버레이
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100034726A (ko) * 2008-09-24 2010-04-01 주식회사 엘지화학 접착제 조성물, 접착 필름, 다이싱 다이본딩 필름, 반도체 웨이퍼 및 반도체 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3483161B2 (ja) 1994-08-11 2004-01-06 リンテック株式会社 粘接着テープおよびその使用方法
KR101237137B1 (ko) 2000-02-15 2013-02-25 히타치가세이가부시끼가이샤 반도체 장치
JP4600640B2 (ja) * 2003-11-10 2010-12-15 信越化学工業株式会社 アクリル系接着剤シート
US20060069200A1 (en) * 2004-09-29 2006-03-30 Shin-Etsu Chemical Co., Ltd. Acrylic adhesive composition and acrylic adhesive sheet
JP2008247936A (ja) * 2007-03-29 2008-10-16 Lintec Corp 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
JP2009096851A (ja) * 2007-10-15 2009-05-07 Three M Innovative Properties Co 非導電性接着剤組成物及び非導電性接着フィルム、並びにそれらの製造方法及び使用方法
KR101002488B1 (ko) * 2007-10-24 2010-12-17 제일모직주식회사 공-연속 상 분리 구조를 가지는 반도체 다이 접착제 조성물 및 이로부터 제조된 접착제 필름
KR101310450B1 (ko) * 2010-04-15 2013-09-24 울산대학교 산학협력단 기계적 품질계수가 우수한 무연 압전 세라믹 조성물

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100034726A (ko) * 2008-09-24 2010-04-01 주식회사 엘지화학 접착제 조성물, 접착 필름, 다이싱 다이본딩 필름, 반도체 웨이퍼 및 반도체 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111129336A (zh) * 2018-10-30 2020-05-08 利诺士尖端材料有限公司 有机电子装置用密封材料
CN111129336B (zh) * 2018-10-30 2022-08-02 利诺士尖端材料有限公司 有机电子装置用密封材料

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