CN107210243A - 楔形接合用部件 - Google Patents

楔形接合用部件 Download PDF

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CN107210243A
CN107210243A CN201680007875.1A CN201680007875A CN107210243A CN 107210243 A CN107210243 A CN 107210243A CN 201680007875 A CN201680007875 A CN 201680007875A CN 107210243 A CN107210243 A CN 107210243A
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ceramic sintered
sintered bodies
wedge bond
mass
lead
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重吉秀和
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Kyocera Corp
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Kyocera Corp
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Abstract

楔形接合用部件具备与引线接触的表面,该表面的至少一部分由以氧化铝为主成分且包含碳化钛作为副成分的陶瓷烧结体的表面构成。

Description

楔形接合用部件
技术领域
本发明涉及一种应用于向被接合构件接合引线的楔形接合装置的楔形接合用部件。
背景技术
一直以来,在向被接合构件连接引线时使用楔形接合装置。例如,专利文献1公开了楔形接合装置所使用的部件(楔形接合用部件)的例子。在专利文献1所述的例子中,按压导电引线的工具前端部由从氮化硅、氧化锆、赛隆(sialon)、碳化硅以及氧化铝中选择出的至少一种陶瓷烧结体形成。
现有技术文献
专利文献
专利文献1:日本特开平7-178568号公报
发明内容
本发明的楔形接合用部件具备与引线接触的表面,该表面的至少一部分由以氧化铝为主成分且包含碳化钛作为副成分的陶瓷烧结体构成。
附图说明
图1是示出具备本实施方式的楔形接合用部件的楔形接合装置的简要结构的一例的示意图。
图2是示出图1所示的楔形接合用部件的简要结构的主要部分的示意性侧视图。
图3是图2所示的楔形接合用部件的立体图。
图4是示出接合杆的其它例子的立体图。
图5是示出楔形接合用部件的其它例子的立体图。
图6是楔形杆的前端面的一部分的立体图。
具体实施方式
当前,谋求更少发生脱粒且耐久性更高的楔形接合用部件。
本发明的楔形接合用部件具备与引线接触的表面,该表面的至少一部分由以氧化铝为主成分且作为副成分包含碳化钛的陶瓷烧结体构成。由此,本发明的楔形接合用部件的耐久性高。需要说明的是,陶瓷烧结体中的主成分是指以在构成陶瓷烧结体的全部成分的合计100质量%之中超过50质量%的方式含有的成分。
以下,针对本发明的楔形接合用部件进行详细说明。图1是示出楔形接合装置10的简要结构的一例的示意图。图2是将图1所示的楔形接合装置10的一部分放大而成的剖视图。图3是与图2对应的立体图。
图1所示的楔形接合装置10具备:接合杆2、引线输送机构3、振动传递机构4和未图示的加压机构。
引线输送机构3将引线1供给至接合杆2。振动传递机构4对接合杆2施加超声波振动。未图示的加压机构对接合杆2施加载重。
接合杆2将从加压机构(未图示)受到的载重和从振动传递机构4受到的超声波振动施加于引线1。通过该载重和超声波信号,引线1与位于电路基板(未图示)上的电极等被接合构件5进行接合。
引线输送机构3具备:转筒31、第一引线引导件32、第二引线引导件33、支承座34、以及引线夹持件35。
转筒31安装于支承座34并卷绕有引线1。第一引线引导件32和第二引线引导件33具备供引线1插入的贯通孔,将所述第一引线引导件32和第二引线引导件33沿着引线1的路径进行配置。图1示出了在转筒31与接合杆2的前端部之间配置引导件的例子。
引线1例如由直径为30μm以上且3mm以下的铜或铝形成。
在楔形接合装置10中,本发明的楔形接合用部件是指,具有与引线1接触的表面的结构,根据图1所示的例子为接合杆2、第一引线引导件32、第二引线引导件33、以及引线夹持件35。
如图3和图4所示,接合杆2也可以在前端侧具有按压引线1的槽2b。如图5所示,第一引线引导件32具备贯通孔32a。此外,如图5所示,第二引线引导件33具备贯通孔33a。从转筒31供给的引线1穿过贯通孔32a和贯通孔33a而被引导至接合杆2的槽2b。引线1在穿过贯通孔32a和贯通孔33a时与贯通孔32a和贯通孔33a的内部的表面接触。
振动传递机构4具备:超声波振荡器41、螺栓紧固朗之万型振动器(以下称为BLT振动器)42、锥体(cone)43和焊头(horn)44。接合杆2被固定于焊头44。从超声波振荡器41振荡的电信号被BLT振动器42转换成纵向振动的超声波振动。该超声波振动经由锥体43和焊头44而被转换成接合杆2的挠曲振动,从而使接合杆2的前端部产生超声波振动。图1中,第一引线引导件32被保持于支承座34的侧部,第二引线引导件33被保持于焊头44的侧部。
引线夹持件35在接合后切断引线1时固定引线1。引线夹持件35安装于焊头44。
图4是接合杆2的其它实施方式的立体图。如图4所示,接合杆2也可以具备用于使引线1稳定而朝前端部供给的贯通孔2a。楔形接合用部件是在供引线滑动的部位处使用的所有部件,其种类、形状等没有特别限定。
本实施方式的楔形接合用部件具备与引线接触的表面,该表面的至少一部分由以氧化铝为主成分且作为副成分包含碳化钛的陶瓷烧结体构成。这种陶瓷烧结体的硬度、刚性和机械强度(以下,有时将它们一并记载为机械特性)均较高。在陶瓷烧结体中,例如氧化铝的含量例如为大于50质量%且80质量%以下,碳化钛的含量为大于20质量%且不足50质量%。
作为引线1,目前为止使用了铝引线、金引线,但近年来逐渐使用成本低且导电性优异、节能性能高的铜引线。铜引线与铝引线、金引线相比,熔点、加工硬化指数高。因此,在利用由氮化硅、氧化锆、赛隆、碳化硅以及氧化铝构成的楔形接合用部件进行楔形接合作业时,存在因磨损或脱粒而产生的微粒增加、半导体设备等产生不良的问题。此外,因容易磨损而存在更换次数增加的问题。
与此相对,由于上述陶瓷烧结体的机械特性优异,因此即使与引线1进行接触、滑动,磨损、脱粒等也较少。此外,由楔形接合时的振动引起的脱粒、破损等也较少。因此,本实施方式的楔形接合用部件即使在长期反复使用的情况下,其更换频率也较低。
此外,在楔形接合用部件为上述陶瓷烧结体时,由于为非磁性,因此不易吸附带有磁性的尘埃。由此,还能够抑制该尘埃对引线1造成损伤。
此外,上述陶瓷烧结体与例如因显示出半导电性而为人所知的碳化硅质烧结体相比导电性高。因此,能够通过放电加工而容易地加工成复杂的形状。近年来,随着接合尺寸的微小化,楔形接合用部件的小型化和形状复杂化不断推进。一般而言,陶瓷烧结体比较难以加工成体积小且复杂的形状。但是,由于上述陶瓷烧结体的导电性高,因此能够通过放电加工而容易地加工成复杂的形状。利用上述陶瓷烧结体构成楔形接合用部件时,能够以低成本制造具有比较复杂形状的楔形接合用部件。
接合杆2、第一引线引导件32和第二引线引导件33也可以不仅是与引线1接触的表面的至少一部分、而是整体由以氧化铝为主成分且作为副成分包含碳化钛的陶瓷烧结体构成。
此外,上述陶瓷烧结体中的碳化钛的含量可以为30质量%以上且40质量%以下。在碳化钛的含量为30质量%以上且40质量%以下时,因高导电性而容易进行放电加工,因此能够应对复杂的形状。此外,在烧结工序中,抑制在陶瓷烧结体的内部产生微小的气孔(例如直径为100nm~500nm的气孔),因此脱粒少。
此外,本实施方式的楔形接合用部件也可以包含以氧化物换算计为0.01质量%以上且1质量%以下的镱。镱的含量优选为以氧化物换算计为0.06质量%以上且0.2质量%以下。镱的氧化物促进烧结的作用高。在镱的含量以氧化物换算计为0.06质量%以上且0.2质量%以下时,可以抑制与镱的偏析相伴的脱粒,且提高机械强度。
对于陶瓷烧结体所含的成分,可以使用X射线衍射装置来鉴定组成。此外,陶瓷烧结体所含的各元素的含量可通过荧光X射线分析装置或ICP(Inductively CoupledPlasma)发光分光分析装置来求出。具体而言,通过X射线衍射装置鉴定氧化铝、碳化钛时,测定铝和钛的含量,并分别将铝换算成氧化物(Al2O3)、将钛换算成碳化物(TiC)即可。
此外,构成本实施方式的楔形接合用部件的陶瓷烧结体的平均晶粒直径可以为0.1μm以上且0.9μm以下。在平均晶粒直径为0.1μm以上且0.9μm以下时,各个晶粒较小,因此不易脱粒出较大的颗粒,并且晶界相变得较少,因此能够提高导热性。若楔形接合用部件的导热性较高,则即使过度升温也能够抑制引线1的损伤等。
陶瓷烧结体的平均晶粒直径如以下那样求出即可。首先,使用金刚石磨粒对陶瓷烧结体的任意表面进行研磨加工而制成镜面。利用磷酸将该镜面蚀刻处理数十秒左右。接着,使用扫描型电子显微镜(SEM),对进行了蚀刻处理的表面进行拍摄。该拍摄中,选择蚀刻处理后的表面的任意部位,将倍率设为10000~13000倍左右,拍摄5μm×8μm的范围。以下,将通过拍摄而得到的图像称为SEM图像。通过使用例如“Image-Pro Plus”之类的图像分析软件(Media Cybernetics(株)制),对该SEM图像进行分析,能够求出陶瓷烧结体的平均晶粒直径。
此外,也可以是,在陶瓷烧结体的与引线1接触的接触面中,氧化铝的晶粒比碳化钛的晶粒突出。在接触面满足这样的结构时,氧化铝的晶粒的硬度低于碳化钛的晶粒,因此不易对引线1造成损伤。此外,由于引线1容易与晶粒卡合,因此容易抑制引线1的移位等。氧化铝晶粒的平均晶粒直径例如为碳化钛晶粒的平均晶粒直径的1.1倍以上且2倍以下。
碳化钛晶粒、氧化铝晶粒的状态例如使用扫描型电子显微镜(SEM)和能量分散型分析装置(EDS)进行确认即可。例如使用SEM在1000~2000倍的倍率下观察成为接触面的表面的突出状态,利用EDS来鉴定所突出的晶粒的构成元素即可。若为氧化铝,则检测到氧和铝,若为碳化钛,则检测到碳和钛。
接着,针对本实施方式的楔形接合用部件的制造方法的一例进行说明。首先,准备氧化铝、二氧化钛和碳化钛各自的粉末。作为这些粉末的合计100质量%中的各粉末的比率,将氧化铝设为55质量%以上且75质量%以下,将二氧化钛设为0.2质量%以上且10质量%以下,将剩余部分设为碳化钛。例如,在将氧化铝设为60质量%以上且70质量%以下、将二氧化钛设为0.2质量%以上且10质量%以下、且将剩余部分设为碳化钛时等,能够得到碳化钛的含量为30质量%以上且40质量%以下的陶瓷烧结体。
二氧化钛(TiO2)作为烧结助剂而发挥功能。此时,如反应式(1)所示那样,二氧化钛在一氧化碳的作用下被还原成一氧化钛(TiO)。在烧制工序中的氩气、氦气、氖气、氮气或者真空等烧制环境中微量地包含一氧化钛。并且,一氧化钛(TiO)如反应式(2)所示那样固溶于碳化钛(TiC),重新生成TiCxOy(x+y<1且x>>y)。应予说明,x=0.85~0.9,y=0.1~0.15。
TiO2+CO→TiO+CO2···(1)
TiO+TiC→TiCxOy(x+y<1且x>>y)···(2)
生成的TiCxOy的密度根据氧化钛的固溶量y而不同。若将固溶量y设为0.15,则陶瓷烧结体的密度变得最大。
作为烧结助剂而添加的二氧化钛中的绝大部分变成TiCxOy。若设为x=0.85~0.9、y=0.1~0.15的范围,则能够将陶瓷烧结体中的气孔的平均孔径设为不足200nm,且将陶瓷烧结体中的气孔的面积占有率设为不足0.03%。这是因为,因氧化钛固溶至碳化钛而减少在内部产生的微小气孔。若将x和y设为上述范围,则例如能够减少直径为100~500nm的气孔的产生,还能够抑制这些气孔的聚集。
此外,为了使陶瓷烧结体更致密,也可以使用将氧化镱、氧化钇和氧化镁中的至少任一种粉末添加0.06质量%以上且0.2质量%以下而得到的产物。这些粉末使用滚筒磨(Barrel Mill)、旋转磨、振动磨、胶体磨、珠磨机、磨碎机或高速混合器等进行湿式混合,并粉碎而制成浆料即可。为了获得包含镱且其含量以氧化物换算计为0.06质量%以上且0.2质量%以下的陶瓷烧结体,将氧化镱的粉末设为0.06质量%以上且0.2质量%以下即可。粉末的湿式混合和粉碎例如优选通过将直径为2mm以下的粉碎用珠投入至珠磨机来进行。
此处,为了获得陶瓷烧结体的平均晶粒直径为0.1μm以上且0.9μm以下的楔形接合用部件,使用较小的原料粉末即可。例如,使用平均粒径为0.08μm以上且0.59μm以下的原料粉末即可。像这样,为了获得较小的原料粉末,使用直径为0.4mm以上且1.5mm以下的粉碎用珠即可。此外,为了获得具有氧化铝的晶粒比碳化钛的晶粒突出的表面的楔形接合用部件,使用直径为0.5mm以下的粉碎用珠即可。粉碎后的粉末的平均晶粒直径通过所谓的激光衍射散射法求出即可。
并且,向粉碎后的粉末中添加结合剂、分散剂等成形助剂并进行混合。混合后,例如使用转动造粒机、喷雾干燥机或压缩造粒机进行造粒,从而得到颗粒。
接着,对获得的颗粒进行加压烧结,能够得到柱状体或板状体的陶瓷烧结体。该加压烧结通过将颗粒填充至成形模具后,在氩气、氦气、氖气、氮气或者真空等环境中,将温度设为1400~1700℃、加压压力设为30MPa以上来进行。此处,若将温度设为1400~1700℃,则烧结不会不充分,能够使碳化钛的晶粒适当地分散,并且抑制碳化钛的晶粒的异常晶粒生长。此外,若将加压烧结中的加压力设为30MPa以上,则能够促进陶瓷烧结体的致密化、得到较高的机械强度。
此外,在加压烧结时,优选将包含碳质材料的遮蔽材料配置在成形体的周围并进行加压烧结。这样一来,能够抑制碳化钛的氧化,能够制作机械强度优异的陶瓷烧结体。
在加压烧结后,根据需要也可以进行热等静压烧结(HIP)。通过进行热等静压烧结(HIP),能够进一步提高机械强度。例如,也可以得到三点弯曲强度为800MPa以上的楔形接合用部件。
并且,使用引线放电加工、雕模放电加工等放电加工,将陶瓷烧结体加工成期望的形状。需要说明的是,也可以在放电加工后进行机械加工来作为精加工。也可以最后利用金刚石粉等对表面进行抛光。
例如,接合杆2的前端侧的槽2b例如可以通过使用平面磨床进行机械加工来制作。图6是接合杆2的一部分的放大立体图。在通过使用平面磨床等的机械加工来形成槽2b时,容易在槽2b的表面形成多个凸条部7。凸条部7是基于机械加工的研磨痕迹。这样的凸条部7优选沿着相对于槽2b的长度方向(即引线1的滑动方向)倾斜的方向形成。例如,槽2b与凸条部7所成的角度优选为10°以上且80°以下的范围。在所成的角度为10°以上的情况下,引线1不易从凸条部7滑出。此外,在凸条部7为80°以下的情况下,能够抑制引线1的损伤。
以下,具体说明楔形接合用部件的例子,但楔形接合用部件不受这些实施例的限定。
实施例1
首先,准备氧化铝、二氧化钛、碳化钛和氧化镱的各粉末,以使陶瓷烧结体中的各成分的含量为表1所示的值的方式调和各粉末。使用直径为1.5mm的粉碎用珠,利用珠磨机对这些粉末进行湿式混合,并进行粉碎而制成浆料。
并且,向粉碎后的粉末中添加结合剂、分散剂等成形助剂,并进行混合。在混合后,使用喷雾干燥机进行造粒,从而得到颗粒。
接着,将所得颗粒填充至成形模具后,进行加压烧结。加压烧结通过在真空环境中将温度设为1600℃、将加压压力设为40MPa、将升温速度设为10℃/分钟、将保持时间设为1小时来进行。经过这些工序,得到宽度、厚度和高度分别为4mm、3mm、40mm的棱柱状陶瓷烧结体以及直径和厚度分别为152.4mm、3mm的圆板状陶瓷烧结体。
此外,作为比较例,制作主成分分别为氮化硅、氧化锆、赛隆、碳化硅和氧化铝的上述形状和尺寸的陶瓷烧结体。
构成各试样的成分的组成使用X射线衍射装置进行鉴定。此外,各试样的元素的量通过ICP(Inductively Coupled Plasma)发光分光分析装置来求出。将各成分的组成及其量示于表(表1或表2)。
分别按照JIS R 1610:2003(ISO14705:2000(MOD))、JIS R 1602:1995、JIS R1601:2008(ISO14704:2000(MOD))、JIS C 2141:1992来测定各试样的维氏硬度、静态弹性模量、三点弯曲强度和体积电阻率。将这些测定值示于表。
此外,针对试样的No.1~11进行下述评价。首先,从各试样的圆板状陶瓷烧结体的中心部切出10个长度为70mm、宽度为3mm、厚度为2mm的短条状试样。在切割中使用了具备金刚石刀片的切片机。针对切出的各试样,测定切断面处产生的崩刃的长度,将其最大值示于表。该观察使用光学显微镜在400倍的倍率下进行。需要说明的是,金刚石刀片使用SD1200,将该金刚石刀片的转速设为10000rpm、进给速度设为100mm/分、一次进刀量设为2mm而进行切割。以下,将崩刃的最大值较小也称为破损性高。此外,将崩刃的最大值较大也称为破损性低。
[表1]
[表2]
如表所示那样,由以氧化铝为主成分且包含碳化钛作为副成分的陶瓷烧结体形成构成的试样No.1~11与其它试样相比,硬度、刚性、机械强度均高。由以氧化铝为主成分且包含碳化钛作为副成分的陶瓷烧结体构成的楔形接合用部件的耐久性高,还能够减少更换频率。此外,试样No.1~11的导电性均较高,因此能够通过放电加工而加工成比较复杂的形状。
此外,试样No.2~10的陶瓷烧结体中的碳化钛含量为30质量%以上且40质量%以下。因此,导电性比碳化钛的含量不足30质量%的试样No.1高,此外,耐破损性比碳化钛的含量超过40质量%的试样No.11高。由此可以说,试样No.2~10兼具高导电性和高耐破损性。
此外,当比较碳化钛的含量相同的试样No.3~9时,试样No.4~8中的镱的含量以氧化物换算计为0.06质量%以上且0.2质量%以下。试样No.4~8与镱的含量以氧化物换算计不足0.06质量%的试样No.3相比,机械强度高,与镱的含量以氧化物换算计超过0.2质量%的试样No.9相比,耐破损性高。由此可以说,试样No.4~8兼具高机械强度和高耐破损性。
实施例2
首先,准备氧化铝、二氧化钛、碳化钛和氧化镱的各粉末。将各粉末以陶瓷烧结体中的氧化铝、碳化钛和氧化镱的各含量为63.9质量%、36质量%、0.1质量%的方式进行调合。使用直径为表3所示的值的粉碎用珠,利用珠磨机对该调合粉末进行湿式混合,并粉碎而制作浆料。
并且,通过与实施例1所示的方法相同的方法,得到作为圆板状的陶瓷烧结体的试样。此处,试样No.23与实施例1的试样No.5相同。
此外,使用与实施例1所示的方法相同的方法,测定崩刃的长度,将其最大值示于表3。需要说明的是,此时的金刚石刀片使用SD1200,将该金刚石刀片的转速设为10000rpm、进给速度设为120mm/分、一次进刀量设为2mm进行切割。
此外,针对各试样的导热性,按照JIS R 1611:2010(ISO18575:2005(MOD))进行测定,将其测定值示于表3。
此外,使用金刚石磨粒对各试样的任意面进行研磨加工而制成镜面。将该镜面用磷酸蚀刻处理数十秒左右。接着,使用扫描型电子显微镜(SEM),在蚀刻处理后的面之中选择任意部位进行拍摄。拍摄时,针对5μm×8μm的范围,将倍率设为10000倍进行拍摄。并且,使用“Image-Pro Plus”这一图像分析软件(Media Cybernetics(株)制),对拍摄得到的SEM图像进行分析,求出陶瓷烧结体的平均晶粒直径,将其值示于表3。
[表3]
如表3所示,试样No.18~22的平均晶粒直径为0.1μm以上且0.9μm以下。试样No.18~22与平均晶粒直径不足0.1μm的试样No.17相比,导热性高,与平均晶粒直径超过0.9μm的试样No.23相比,耐破损性高。由此可以说,试样No.18~22兼具高导热性和高耐破损性。
实施例3
使用试样No.20,制作图示的接合杆2。将制作出的接合杆2装配于图1所示的楔形接合装置10,进行接合耐久试验。作为比较例,使用以碳化钨为主成分的所谓超硬制的接合杆,进行同样的耐久试验。在使用了试样No.20的实施例的接合杆的情况下,即使在反复进行30万次的接合后,磨损量为30μm以下。另一方面,比较例的接合杆在反复进行10万次接合的阶段中,磨损量已超过100μm。在使用了由以氧化铝为主成分且包含碳化钛作为副成分的陶瓷烧结体构成的试样No.20的情况下,与比较例相比,耐久性显著变高。此外,在结束10万次接合后,利用显微镜观察接合杆的前端面的状态。比较例的前端面附着有许多因磨损而产生的微粒,但试样No.20的实施例中未确认微粒。
附图标记说明
1:引线
2:接合工具
3:引线输送机构
4:振动传递机构
5:被接合构件
31:转筒
32:第一引线引导件
33:第二引线引导件
34:支承座
35:引线夹持件
41:超声波振荡器
42:螺栓夹紧朗之万型振动器
43:锥体
44:焊头

Claims (5)

1.一种楔形接合用部件,其特征在于,
所述楔形接合用部件具备与引线接触的表面,
该表面的至少一部分由以氧化铝为主成分且包含碳化钛作为副成分的陶瓷烧结体构成。
2.根据权利要求1所述的楔形接合用部件,其特征在于,
所述陶瓷烧结体含有30质量%以上且40质量%以下的碳化钛。
3.根据权利要求1或2所述的楔形接合用部件,其特征在于,
所述陶瓷烧结体含有以氧化物换算计为0.06质量%以上且0.2质量%以下的镱。
4.根据权利要求1至3中任一项所述的楔形接合用部件,其特征在于,
所述陶瓷烧结体的平均晶粒直径为0.1μm以上且0.9μm以下。
5.根据权利要求1至4中任一项所述的楔形接合用部件,其特征在于,
在所述陶瓷烧结体的与所述引线接触的接触面中,氧化铝的晶粒比碳化钛的晶粒突出。
CN201680007875.1A 2015-01-29 2016-01-28 楔形接合用部件 Pending CN107210243A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645389A (ja) * 1992-07-21 1994-02-18 Shinagawa Refract Co Ltd ボンディングツール
JPH06314721A (ja) * 1993-04-28 1994-11-08 Kyocera Corp ワイヤボンディング用キャピラリ
JP2008078442A (ja) * 2006-09-22 2008-04-03 Kyocera Corp ワイヤボンディング用クランプ部材
CN103718281A (zh) * 2011-09-20 2014-04-09 奥托戴尼电气公司 引线接合工具

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206194A (ja) 1992-01-27 1993-08-13 Shinagawa Refract Co Ltd アルミナ系ボンディングキャピラリ
JPH07178568A (ja) 1993-10-08 1995-07-18 Honda Motor Co Ltd 抵抗溶接用電極及びその製造方法
JP3016223U (ja) * 1995-03-24 1995-09-26 超音波工業株式会社 超音波ボンディング用ウェッジツール
JPH09232386A (ja) * 1996-02-23 1997-09-05 Nec Kansai Ltd ワイヤボンダ
JPH11135534A (ja) * 1997-10-31 1999-05-21 Hitachi Ltd 半導体装置
JP2000058603A (ja) * 1998-08-10 2000-02-25 Fuji Electric Co Ltd 超音波ワイヤボンダ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645389A (ja) * 1992-07-21 1994-02-18 Shinagawa Refract Co Ltd ボンディングツール
JPH06314721A (ja) * 1993-04-28 1994-11-08 Kyocera Corp ワイヤボンディング用キャピラリ
JP2008078442A (ja) * 2006-09-22 2008-04-03 Kyocera Corp ワイヤボンディング用クランプ部材
CN103718281A (zh) * 2011-09-20 2014-04-09 奥托戴尼电气公司 引线接合工具

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