CN107170750A - 一种半导体元器件结构及其制作方法 - Google Patents
一种半导体元器件结构及其制作方法 Download PDFInfo
- Publication number
- CN107170750A CN107170750A CN201710318802.0A CN201710318802A CN107170750A CN 107170750 A CN107170750 A CN 107170750A CN 201710318802 A CN201710318802 A CN 201710318802A CN 107170750 A CN107170750 A CN 107170750A
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon
- oxide layer
- oxide
- silicon substrate
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- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 238000010276 construction Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 130
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 abstract description 10
- 238000013461 design Methods 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710318802.0A CN107170750B (zh) | 2017-05-08 | 2017-05-08 | 一种半导体元器件结构及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710318802.0A CN107170750B (zh) | 2017-05-08 | 2017-05-08 | 一种半导体元器件结构及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107170750A true CN107170750A (zh) | 2017-09-15 |
CN107170750B CN107170750B (zh) | 2019-08-02 |
Family
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Family Applications (1)
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CN201710318802.0A Active CN107170750B (zh) | 2017-05-08 | 2017-05-08 | 一种半导体元器件结构及其制作方法 |
Country Status (1)
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CN (1) | CN107170750B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109637971A (zh) * | 2018-12-07 | 2019-04-16 | 合肥市华达半导体有限公司 | 一种具有改进性能的半导体器件 |
CN110021559A (zh) * | 2018-01-09 | 2019-07-16 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101065840A (zh) * | 2004-12-08 | 2007-10-31 | 先进微装置公司 | 半导体装置以及制造包括多堆栈混合定向层之半导体装置之方法 |
CN101593771A (zh) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其形成方法 |
CN101692434A (zh) * | 2009-10-15 | 2010-04-07 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的深槽隔离结构的填充方法 |
CN102945851A (zh) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | 绝缘体上硅结构以及半导体器件结构 |
CN103824837A (zh) * | 2014-03-10 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | 半导体器件结构及其制作方法 |
-
2017
- 2017-05-08 CN CN201710318802.0A patent/CN107170750B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101065840A (zh) * | 2004-12-08 | 2007-10-31 | 先进微装置公司 | 半导体装置以及制造包括多堆栈混合定向层之半导体装置之方法 |
CN101593771A (zh) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其形成方法 |
CN101692434A (zh) * | 2009-10-15 | 2010-04-07 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的深槽隔离结构的填充方法 |
CN102945851A (zh) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | 绝缘体上硅结构以及半导体器件结构 |
CN103824837A (zh) * | 2014-03-10 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | 半导体器件结构及其制作方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110021559A (zh) * | 2018-01-09 | 2019-07-16 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN110021559B (zh) * | 2018-01-09 | 2021-08-24 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN109637971A (zh) * | 2018-12-07 | 2019-04-16 | 合肥市华达半导体有限公司 | 一种具有改进性能的半导体器件 |
Also Published As
Publication number | Publication date |
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CN107170750B (zh) | 2019-08-02 |
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Effective date of registration: 20220616 Address after: 230000 Room 301 and 302, building 4, phase I, mechanical and Electrical Industrial Park, No. 767, Yulan Avenue, high tech Zone, Hefei City, Anhui Province Patentee after: Hefei Huayu Semiconductor Co.,Ltd. Address before: 6 / F, building B, public service and applied technology R & D Center for scientific and technological innovation, Hewu Beng Experimental Zone, 860 Wangjiang West Road, high tech Zone, Hefei City, Anhui Province, 230000 Patentee before: HEFEI HUADA SEMICONDUCTOR Co.,Ltd. |
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Address after: 230000, No. 66 Tiantangzhai Road, High tech Zone, Hefei City, Anhui Province Patentee after: Hefei Huayu Semiconductor Co.,Ltd. Country or region after: China Address before: 230000 Room 301 and 302, building 4, phase I, mechanical and Electrical Industrial Park, No. 767, Yulan Avenue, high tech Zone, Hefei City, Anhui Province Patentee before: Hefei Huayu Semiconductor Co.,Ltd. Country or region before: China |
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CP03 | Change of name, title or address |