CN107170688B - 一种沟槽型功率器件及其制作方法 - Google Patents
一种沟槽型功率器件及其制作方法 Download PDFInfo
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- CN107170688B CN107170688B CN201710577218.7A CN201710577218A CN107170688B CN 107170688 B CN107170688 B CN 107170688B CN 201710577218 A CN201710577218 A CN 201710577218A CN 107170688 B CN107170688 B CN 107170688B
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 258
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710577218.7A CN107170688B (zh) | 2017-07-14 | 2017-07-14 | 一种沟槽型功率器件及其制作方法 |
Applications Claiming Priority (1)
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CN201710577218.7A CN107170688B (zh) | 2017-07-14 | 2017-07-14 | 一种沟槽型功率器件及其制作方法 |
Publications (2)
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CN107170688A CN107170688A (zh) | 2017-09-15 |
CN107170688B true CN107170688B (zh) | 2019-10-22 |
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CN201710577218.7A Active CN107170688B (zh) | 2017-07-14 | 2017-07-14 | 一种沟槽型功率器件及其制作方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108110041B (zh) * | 2017-12-12 | 2020-08-28 | 南京溧水高新创业投资管理有限公司 | 半导体功率器件及其制作方法 |
CN109994550A (zh) * | 2017-12-30 | 2019-07-09 | 贵州恒芯微电子科技有限公司 | 一种低压槽栅超结mos器件 |
WO2023142540A1 (zh) * | 2022-01-25 | 2023-08-03 | 湖北九峰山实验室 | 一种终端结构、制作方法以及功率器件 |
CN115911098A (zh) * | 2023-01-29 | 2023-04-04 | 深圳市威兆半导体股份有限公司 | 碳化硅功率器件终端及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573550B2 (en) * | 2000-01-28 | 2003-06-03 | General Electronics Applications, Inc. | Semiconductor with high-voltage components and low-voltage components on a shared die |
CN102945858A (zh) * | 2012-11-29 | 2013-02-27 | 杭州士兰集成电路有限公司 | 具有场截止缓冲层的igbt器件及制造方法 |
CN202948930U (zh) * | 2012-09-26 | 2013-05-22 | 中国科学院微电子研究所 | 一种半导体器件 |
CN104465719A (zh) * | 2013-09-24 | 2015-03-25 | 丰田自动车株式会社 | 半导体装置 |
CN106409827A (zh) * | 2015-07-28 | 2017-02-15 | 无锡华润华晶微电子有限公司 | 一种整流器件及其制备方法 |
-
2017
- 2017-07-14 CN CN201710577218.7A patent/CN107170688B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573550B2 (en) * | 2000-01-28 | 2003-06-03 | General Electronics Applications, Inc. | Semiconductor with high-voltage components and low-voltage components on a shared die |
CN202948930U (zh) * | 2012-09-26 | 2013-05-22 | 中国科学院微电子研究所 | 一种半导体器件 |
CN102945858A (zh) * | 2012-11-29 | 2013-02-27 | 杭州士兰集成电路有限公司 | 具有场截止缓冲层的igbt器件及制造方法 |
CN104465719A (zh) * | 2013-09-24 | 2015-03-25 | 丰田自动车株式会社 | 半导体装置 |
CN106409827A (zh) * | 2015-07-28 | 2017-02-15 | 无锡华润华晶微电子有限公司 | 一种整流器件及其制备方法 |
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Address after: No.1 Chengdu Road, Haicheng District, Beihai City, Guangxi Zhuang Autonomous Region Patentee after: Lv Zhichao Address before: 317016 149 Duxi Road, Duqiao Town, Linhai City, Taizhou City, Zhejiang Province Patentee before: Lv Zhichao |
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