CN102610523A - 在超级结mosfet中集成肖特基二极管的方法 - Google Patents
在超级结mosfet中集成肖特基二极管的方法 Download PDFInfo
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- CN102610523A CN102610523A CN2011100215870A CN201110021587A CN102610523A CN 102610523 A CN102610523 A CN 102610523A CN 2011100215870 A CN2011100215870 A CN 2011100215870A CN 201110021587 A CN201110021587 A CN 201110021587A CN 102610523 A CN102610523 A CN 102610523A
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- junction mosfet
- schottky diode
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000005669 field effect Effects 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 230000001413 cellular effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110021587.0A CN102610523B (zh) | 2011-01-19 | 2011-01-19 | 在超级结mosfet中集成肖特基二极管的方法 |
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CN201110021587.0A CN102610523B (zh) | 2011-01-19 | 2011-01-19 | 在超级结mosfet中集成肖特基二极管的方法 |
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CN102610523A true CN102610523A (zh) | 2012-07-25 |
CN102610523B CN102610523B (zh) | 2015-02-04 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105679758A (zh) * | 2016-03-25 | 2016-06-15 | 南京微盟电子有限公司 | 一种具有防电流倒灌的p型金属氧化物半导体场效应管 |
CN106057798A (zh) * | 2016-06-27 | 2016-10-26 | 电子科技大学 | 一种集成沟槽肖特基的mosfet |
CN106129119A (zh) * | 2016-08-31 | 2016-11-16 | 西安龙腾新能源科技发展有限公司 | 集成肖特基二极管的超结功率vdmos的版图结构及其制作方法 |
CN107768371A (zh) * | 2017-10-24 | 2018-03-06 | 贵州芯长征科技有限公司 | 集成肖特基结的超结mosfet结构及其制备方法 |
CN111969063A (zh) * | 2020-09-21 | 2020-11-20 | 电子科技大学 | 一种具有漏端肖特基接触的超结mosfet |
US11031472B2 (en) | 2018-12-28 | 2021-06-08 | General Electric Company | Systems and methods for integrated diode field-effect transistor semiconductor devices |
CN114678277A (zh) * | 2022-05-27 | 2022-06-28 | 深圳平创半导体有限公司 | 中心注入p+屏蔽区的分裂栅平面mosfet及其制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070262410A1 (en) * | 2006-05-01 | 2007-11-15 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing |
US20080035992A1 (en) * | 2006-08-09 | 2008-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20080246096A1 (en) * | 2007-04-03 | 2008-10-09 | Denso Corporation | Semiconductor device including schottky barrier diode and method of manufacturing the same |
US20080246085A1 (en) * | 2007-04-03 | 2008-10-09 | Kabushiki Kaisha Toshiba | Power semiconductor device |
CN101752311A (zh) * | 2008-12-17 | 2010-06-23 | 上海华虹Nec电子有限公司 | 功率mos晶体管与肖特基二极管的集成方法及结构 |
US20100320538A1 (en) * | 2007-08-29 | 2010-12-23 | Rohm Co., Ltd | Semiconductor device |
CN101465374B (zh) * | 2007-12-21 | 2011-02-16 | 万国半导体股份有限公司 | 在有源区接触沟槽中具有集成肖特基二极管的mos器件 |
-
2011
- 2011-01-19 CN CN201110021587.0A patent/CN102610523B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070262410A1 (en) * | 2006-05-01 | 2007-11-15 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing |
US20080035992A1 (en) * | 2006-08-09 | 2008-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20080246096A1 (en) * | 2007-04-03 | 2008-10-09 | Denso Corporation | Semiconductor device including schottky barrier diode and method of manufacturing the same |
US20080246085A1 (en) * | 2007-04-03 | 2008-10-09 | Kabushiki Kaisha Toshiba | Power semiconductor device |
US20100320538A1 (en) * | 2007-08-29 | 2010-12-23 | Rohm Co., Ltd | Semiconductor device |
CN101465374B (zh) * | 2007-12-21 | 2011-02-16 | 万国半导体股份有限公司 | 在有源区接触沟槽中具有集成肖特基二极管的mos器件 |
CN101752311A (zh) * | 2008-12-17 | 2010-06-23 | 上海华虹Nec电子有限公司 | 功率mos晶体管与肖特基二极管的集成方法及结构 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105679758A (zh) * | 2016-03-25 | 2016-06-15 | 南京微盟电子有限公司 | 一种具有防电流倒灌的p型金属氧化物半导体场效应管 |
CN105679758B (zh) * | 2016-03-25 | 2017-12-29 | 南京微盟电子有限公司 | 一种具有防电流倒灌的p型金属氧化物半导体场效应管 |
CN106057798A (zh) * | 2016-06-27 | 2016-10-26 | 电子科技大学 | 一种集成沟槽肖特基的mosfet |
CN106057798B (zh) * | 2016-06-27 | 2019-01-01 | 电子科技大学 | 一种集成沟槽肖特基的mosfet |
CN106129119A (zh) * | 2016-08-31 | 2016-11-16 | 西安龙腾新能源科技发展有限公司 | 集成肖特基二极管的超结功率vdmos的版图结构及其制作方法 |
CN107768371A (zh) * | 2017-10-24 | 2018-03-06 | 贵州芯长征科技有限公司 | 集成肖特基结的超结mosfet结构及其制备方法 |
US11031472B2 (en) | 2018-12-28 | 2021-06-08 | General Electric Company | Systems and methods for integrated diode field-effect transistor semiconductor devices |
CN111969063A (zh) * | 2020-09-21 | 2020-11-20 | 电子科技大学 | 一种具有漏端肖特基接触的超结mosfet |
CN114678277A (zh) * | 2022-05-27 | 2022-06-28 | 深圳平创半导体有限公司 | 中心注入p+屏蔽区的分裂栅平面mosfet及其制造方法 |
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CN102610523B (zh) | 2015-02-04 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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