CN107078053B - 使用有金属氧化物微粒作为变色层的等离子体处理检测指示器 - Google Patents
使用有金属氧化物微粒作为变色层的等离子体处理检测指示器 Download PDFInfo
- Publication number
- CN107078053B CN107078053B CN201580063223.5A CN201580063223A CN107078053B CN 107078053 B CN107078053 B CN 107078053B CN 201580063223 A CN201580063223 A CN 201580063223A CN 107078053 B CN107078053 B CN 107078053B
- Authority
- CN
- China
- Prior art keywords
- color
- fine particles
- changing layer
- plasma processing
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010419 fine particle Substances 0.000 title claims abstract description 93
- 238000012545 processing Methods 0.000 title claims abstract description 57
- 238000001514 detection method Methods 0.000 title claims abstract description 41
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 41
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 40
- 238000009832 plasma treatment Methods 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 33
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000004380 ashing Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011859 microparticle Substances 0.000 claims 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims 2
- 229910003069 TeO2 Inorganic materials 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- QXYJCZRRLLQGCR-UHFFFAOYSA-N molybdenum(IV) oxide Inorganic materials O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 88
- 210000002381 plasma Anatomy 0.000 description 80
- 239000007789 gas Substances 0.000 description 31
- 235000012431 wafers Nutrition 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 12
- 229910001935 vanadium oxide Inorganic materials 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 5
- 238000002845 discoloration Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- -1 oxoacid salts Chemical class 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004606 Fillers/Extenders Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 150000004715 keto acids Chemical class 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910000014 Bismuth subcarbonate Inorganic materials 0.000 description 2
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- 150000004056 anthraquinones Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- JDIBGQFKXXXXPN-UHFFFAOYSA-N bismuth(3+) Chemical compound [Bi+3] JDIBGQFKXXXXPN-UHFFFAOYSA-N 0.000 description 2
- PPNKDDZCLDMRHS-UHFFFAOYSA-N bismuth(III) nitrate Inorganic materials [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- FWIZHMQARNODNX-UHFFFAOYSA-L dibismuth;oxygen(2-);carbonate Chemical compound [O-2].[O-2].[Bi+3].[Bi+3].[O-]C([O-])=O FWIZHMQARNODNX-UHFFFAOYSA-L 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 235000010215 titanium dioxide Nutrition 0.000 description 2
- UUUGYDOQQLOJQA-UHFFFAOYSA-L vanadyl sulfate Chemical compound [V+2]=O.[O-]S([O-])(=O)=O UUUGYDOQQLOJQA-UHFFFAOYSA-L 0.000 description 2
- 229940041260 vanadyl sulfate Drugs 0.000 description 2
- 229910000352 vanadyl sulfate Inorganic materials 0.000 description 2
- MSBGPEACXKBQSX-UHFFFAOYSA-N (4-fluorophenyl) carbonochloridate Chemical compound FC1=CC=C(OC(Cl)=O)C=C1 MSBGPEACXKBQSX-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- MFWFDRBPQDXFRC-UHFFFAOYSA-N 4-hydroxypent-3-en-2-one;vanadium Chemical compound [V].CC(O)=CC(C)=O.CC(O)=CC(C)=O.CC(O)=CC(C)=O MFWFDRBPQDXFRC-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- AVLRBAIEVARWSI-UHFFFAOYSA-M C(C)(=O)[O-].[Mo+](=O)=O Chemical compound C(C)(=O)[O-].[Mo+](=O)=O AVLRBAIEVARWSI-UHFFFAOYSA-M 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- KMEIUBFSUXIXTB-UHFFFAOYSA-M N.[O-2].[O-2].[OH-].[V+5] Chemical compound N.[O-2].[O-2].[OH-].[V+5] KMEIUBFSUXIXTB-UHFFFAOYSA-M 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical class CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 1
- 229910000380 bismuth sulfate Inorganic materials 0.000 description 1
- FADJNIVFPZAURC-UHFFFAOYSA-M bismuth;hydroxide;nitrate Chemical compound [OH-].[Bi+3].[O-][N+]([O-])=O FADJNIVFPZAURC-UHFFFAOYSA-M 0.000 description 1
- IAQAJTTVJUUIQJ-UHFFFAOYSA-N bismuth;trihydrate Chemical compound O.O.O.[Bi] IAQAJTTVJUUIQJ-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- BEQZMQXCOWIHRY-UHFFFAOYSA-H dibismuth;trisulfate Chemical compound [Bi+3].[Bi+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O BEQZMQXCOWIHRY-UHFFFAOYSA-H 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- JIRDGEGGAWJQHQ-UHFFFAOYSA-N disulfur dibromide Chemical compound BrSSBr JIRDGEGGAWJQHQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 1
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000005324 oxide salts Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/50—Sympathetic, colour changing or similar inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
- C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
- C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/78—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/78—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
- G01N21/783—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour for analysing gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
- G01N31/22—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using chemical indicators
- G01N31/223—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using chemical indicators for investigating presence of specific gases or aerosols
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
- G01N31/22—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using chemical indicators
- G01N31/226—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using chemical indicators for investigating the degree of sterilisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N2021/751—Comparing reactive/non reactive substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Wood Science & Technology (AREA)
- Molecular Biology (AREA)
- Biophysics (AREA)
- Dispersion Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本发明提供一种等离子体处理检测指示器，其具有通过等离子体处理而变色的变色层，且可将因等离子体处理所导致的变色层气体化或形成微细碎屑而飞散的问题，抑制到不影响电子设备特性的程度，并且，具有良好的耐热性。具体而言，本发明提供一种等离子体处理检测指示器，其具有通过等离子体处理而变色的变色层，其特征在于，所述变色层含有金属氧化物微粒，所述金属氧化物微粒含有选自由Mo、W、Sn、V、Ce、Te及Bi组成的组中的至少一种元素，且平均粒径为50μm以下。
Description
技术领域
本发明特别涉及一种作为有效用作在电子设备制造装置中所使用的指示器的、使用有金属氧化物微粒作为变色层的等离子体处理检测指示器。
背景技术
以往，电子设备的制造工序中，对电子设备基板(被处理基板)进行各种处理。例如，电子设备为半导体时，投入半导体晶圆(晶圆)后，经过形成绝缘膜或金属膜的成膜工序、形成光刻胶图案的光蚀刻工序、使用光刻胶图案对膜进行加工的蚀刻工序、在半导体晶圆上形成导电层的杂质添加工序(另外称为掺杂或扩散工序)、研磨具有凹凸的膜的表面使其平坦的CMP工序(化学性机械性研磨)等，进行确认图案的完成或电特性的半导体晶圆电特性检查(有时将至此的工序总称为前工序)。接着，移至形成半导体芯片的后工序。这样的前工序，不仅限于电子设备为半导体的情况，同样也应用在制造其他电子设备(发光二极管(LED)、太阳能电池、液晶显示器、有机EL(Electro-Luminescence)显示器等)上。
在前工序中，除了上述的工序以外，还包括利用等离子体、臭氧、紫外线等的清洗工序；利用等离子体、含自由基的气体等进行的光刻胶图案的去除工序(也称为灰化或灰化去除)等工序。此外，在上述成膜工序中，有在晶圆表面使反应性气体发生化学反应而成膜的CVD、或形成金属膜的溅射等，此外，上述蚀刻工序中，可列举出：利用在等离子体中的化学反应进行的干式蚀刻、利用离子束进行的蚀刻等。在此，等离子体是指气体呈电离状态，离子、自由基及电子存在于其内部。
在电子设备的制造工序中，为了确保电子设备的性能、信赖性等，需要适当地进行上述的各种处理。因此，例如，在以成膜工序、蚀刻工序、灰化工序、杂质添加工序、清洗工序等为代表的等离子体处理中，为了确认等离子体处理的完成，实施：使用分光装置的等离子体的发光分析、使用有具有在等离子体处理氛围下变色的变色层的等离子体处理检测指示器的结束确认等。
作为等离子体处理检测指示器的例子，专利文献1中公开了一种等离子体处理检测油墨组合物，其含有：1)蒽醌类色素、偶氮类色素及酞菁类色素中的至少1种，以及2)粘合剂树脂、阳离子型表面活性剂及增量剂中的至少1种，其特征在于：所述等离子体处理中所使用的用于产生等离子体的气体，含有氧气及氮气中的至少1种；并且，还公开了一种等离子体处理检测指示器，其在基材上形成有由该油墨组合物形成的变色层。
此外，专利文献2中公开了一种等离子体处理检测油墨组合物，其为含有：1)蒽醌类色素、偶氮类色素及次甲基类色素中的至少1种；以及2)粘合剂树脂、阳离子型表面活性剂及增量剂中的至少1种的惰性气体，其特征在于：所述惰性气体含有选自由氦、氖、氩、氪及氙组成的组中的至少1种；并且，还公开了一种等离子体处理检测指示器，其在基材上形成有由该油墨组合物形成的变色层。
然而，使用发光分析或以往的等离子体处理检测指示器的确认方法，作为电子设备制造装置中使用的指示器，有时性能不充分。具体而言，使用发光分析的确认方法，由于被限定为从设置于电子设备制造装置的窗口进行的测定及分析，因此在无法展望电子设备制造装置内时，容易变得难以有效地进行测定及分析。此外，使用以往的等离子体处理检测指示器时，在通过变色层的变色而能够确认等离子体处理的完成这一点上，为简便且优良的方法，但由于变色层含有色素、粘合剂树脂、表面活性剂等有机成分，因此，担心因等离子体处理而使有机成分气体化或形成微细的碎屑而飞散，从而降低电子设备制造装置的高清洗性或导致电子设备的污染(污染(contamination))。此外，担心有机成分的气体化对电子设备制造装置的真空性也造成影响。进一步，以有机成分为主体的以往的变色层，由于耐热性不充分，因此在电子设备制造装置为高温时存在难以作为指示器而使用的问题。
因此，正期望开发一种等离子体处理检测指示器，其具有通过等离子体处理而变色的变色层，且可将因等离子体处理所导致的变色层气体化或形成微细碎屑而飞散的问题，抑制到不会影响电子设备特性的程度，并且，具有良好的耐热性的。
现有技术文献
专利文献
专利文献1：特开2013-98196号公报
专利文献2：特开2013-95764号公报
发明内容
本发明要解决的技术问题
本发明的目的在于提供一种等离子体处理检测指示器，其具有通过等离子体处理而变色的变色层，且可将因等离子体处理所导致的变色层气体化或形成微细碎屑而飞散的问题，抑制到不会影响电子设备特性的程度，并且，具有良好的耐热性。
解决技术问题的技术手段
本发明人为达到上述目的而反复深入研究，其结果发现使用特定的金属氧化物微粒作为变色层中所含的变色材料时，可达到上述目的，从而完成本发明。
即，本发明涉及一种下述的等离子体处理检测指示器。
1.一种等离子体处理检测指示器，其具有通过等离子体处理而变色的变色层，其中，所述变色层含有金属氧化物微粒，所述金属氧化物微粒含有选自由Mo、W、Sn、V、Ce、Te及Bi组成的组中的至少一种元素，且平均粒径为50μm以下。
2.根据上述项1所述的等离子体处理检测指示器，其中，所述金属氧化物微粒为选自氧化钼微粒(IV)、氧化钼微粒(VI)、氧化钨微粒(VI)、氧化锡微粒(IV)、氧化钒微粒(II)、氧化钒微粒(III)、氧化钒微粒(IV)、氧化钒微粒(V)、氧化铈微粒(IV)、氧化碲微粒(IV)、氧化铋微粒(III)、碳酸氧铋微粒(III)及硫酸氧钒微粒(IV)中至少一种。
3.根据上述项1或2所述的等离子体处理检测指示器，其中，所述金属氧化物微粒为选自由氧化钼微粒(Ⅵ)、氧化钨微粒(Ⅵ)、氧化钒微粒(III)、氧化钒微粒(V)及氧化铋微粒(III)组成的组中的至少一种。
4.根据上述项1～3中任一项所述的等离子体处理检测指示器，其具有支撑所述变色层的基材。
5.根据上述项1～4中任一项所述的等离子体处理检测指示器，其为在电子设备制造装置中使用的指示器。
6.根据上述项5所述的等离子体处理检测指示器，其中，所述指示器的形状与在所述电子设备制造装置中所使用的电子设备基板的形状相同。
7.根据上述项5或6所述的等离子体处理检测指示器，其中，所述电子设备制造装置，进行选自由成膜工序、蚀刻工序、灰化工序、杂质添加工序及清洗工序组成的组中的至少一种的等离子体处理。
8.根据上述项1～7中任一项所述的等离子体处理检测指示器，其具有不因等离子体处理而变色的非变色层。
9.根据上述项8所述的等离子体处理检测指示器，其中，所述非变色层含有选自由氧化钛(IV)、氧化锆(IV)、氧化钇(III)、硫酸钡、氧化镁、二氧化硅、氧化铝、铝、银、钇、锆、钛、铂组成的组中的至少一种。
10.根据上述项8或9所述的等离子体处理检测指示器，其中，所述基材上依次形成有所述非变色层及所述变色层，所述非变色层邻接形成于所述基材的主面上，所述变色层邻接形成于所述非变色层的主面上。
发明效果
本发明的等离子体处理检测指示器，使用特定的金属氧化物微粒作为变色层中所含的变色材料，该变色层通过等离子体处理而使金属氧化物微粒的价数改变，从而发生化学性变色，因此，因等离子体处理而导致的变色层气体化或成为微细碎屑而飞散的问题，被抑制到不影响电子设备特性的程度。此外，由于变色材料由金属氧化物微粒所构成，因此具有能耐受电子设备制造时的处理温度的耐热性。这样的本发明的指示器，作为除了要求高清洗性以外，还要求真空性、在高温下的处理等的电子设备制造装置中所使用的等离子体处理检测指示器特别有用。另外，作为电子设备，可列举例如：半导体、发光二极管(LED)、半导体激光、功率设备、太阳电池、液晶显示器、有机EL显示器等。
附图说明
图1是试验例1中所使用的电感耦合等离子体(ICP；Inductively CoupledPlasma)型的等离子体蚀刻装置的截面示意图。
图2是表示试验例1的结果(平均粒径与ΔE的关系)的图。
图3是试验例2中所使用的电容耦合等离子体(平行平板型；CapacitivelyCoupled Plasma)型的等离子体蚀刻装置的截面示意图。
图4是表示试验例2的结果(平均粒径与ΔE的关系)的图。
具体实施方式
以下，详细说明本发明的等离子体处理检测指示器。
本发明的等离子体处理检测指示器(以下，也称为“本发明的指示器”)，具有通过等离子体处理而变色的变色层，所述变色层含有金属氧化物微粒，所述金属氧化物微粒(以下，也简称为“金属氧化物微粒”)含有选自由Mo、W、Sn、V、Ce、Te及Bi组成的组中的至少一种元素，且平均粒径为50μm以下。
具有上述特征的本发明的指示器，使用特定的金属氧化物微粒作为变色层中所含的变色材料，该变色层通过等离子体处理而使金属氧化物微粒的价数改变，从而发生化学性变色，因此，因等离子体处理而导致的变色层气体化或成为微细碎屑而飞散的问题，被抑制到不影响电子设备特性的程度。此外，由于变色材料由金属氧化物微粒所构成，因此具有可耐受电子设备制造时的处理温度的耐热性。这样的本发明的指示器，作为除了要求高清洗性以外，还要求真空性、在高温下的处理等的电子设备制造装置中所使用的等离子体处理检测指示器特别有用。另外，作为电子设备，可列举例如：半导体、发光二极管(LED)、半导体激光、功率设备、太阳电池、液晶显示器、有机EL显示器等。
变色层
本发明的指示器具有通过等离子体处理而变色的变色层，且所述变色层含有金属氧化物微粒，所述金属氧化物微粒含选自由Mo、W、Sn、V、Ce、Te及Bi组成的组中的至少一种元素，且平均粒径为50μm以下。特别是，本发明中，通过等离子体处理而使金属氧化物微粒的价数改变，从而发生化学性变色。该金属氧化物微粒与有机成分不同，不仅可将因等离子体处理而导致的气体化或形成微细碎屑而飞散的问题，抑制到不会影响电子设备特性的程度，还具有能耐受电子设备制造时的处理温度的耐热性。
作为金属氧化物微粒，可列举选自由氧化钼微粒(IV)、氧化钼微粒(VI)、氧化钨微粒(VI)、氧化锡微粒(IV)、氧化钒微粒(II)、氧化钒微粒(III)、氧化钒微粒(IV)、氧化钒微粒(V)、氧化铈微粒(IV)、氧化碲微粒(IV)、氧化铋微粒(III)、碳酸氧铋微粒(III)及硫酸氧钒微粒(IV)组成的组中的至少一种。另外，金属氧化物微粒，虽然也允许分子中具有一些结晶水，但由于存在水分子(水分气体)放出的可能性，因此优选不含结晶水。
在上述之中，考虑到因等离子体处理带来的变色性，金属氧化物颗粒优选可列举出选自由氧化钼微粒(Ⅵ)、氧化钨微粒(Ⅵ)、氧化钒微粒(III)、氧化钒微粒(V)及氧化铋微粒(III)组成的组中的至少一种。
本发明的指示器中，金属氧化物微粒的平均粒径为50μm以下，特别更优选为0.01～10μm左右。另外，本说明书中的平均粒径为利用激光衍射、散射式粒径分布测定装置(产品名称：MICROTRACK MT3000、日机装制造)而测定的值。通过使平均粒径在50μm以下，可确保由等离子体处理带来的良好的变色性(感受性)。
本发明的指示器中，变色层含有上述金属氧化物微粒。变色层被期望实质上由金属氧化物微粒形成，优选除金属氧化物微粒以外，将有机成分等排出在外。另外，金属氧化物微粒以凝集体(干燥物)等状态而被包含。
变色层的形成方法虽并无限定，但例如，在调制含有平均粒径为50μm以下的金属氧化物微粒的浆料后，将该浆料涂布于基板上，蒸馏掉溶剂后，在大气中干燥，从而可形成变色层。
在此，平均粒径为50μm以下的金属氧化物微粒，也可通过将金属氧化物微粒的原料粉末焙烧，形成氧化物后，通过适当地调整平均粒径而进行调制。为了使金属氧化物微粒的平均粒径小于50μm，例如，可使用公知的珠磨机、三联辊等剪断机将粒径调整至规定范围。
上述原料粉末，是指通过焙烧而变化为金属氧化物的粉末，可以列举出含有上述金属元素(Mo、W、Sn、V、Ce、Te及Bi中的一种以上)的氢氧化物、碳酸盐、乙酰丙酮络合物、氧化物盐、含氧酸、含氧酸盐、含氧络合物等。在此，上述含氧酸，除了原酸、偏酸以外，也包含同多酸及杂多酸等缩合含氧酸。
具体而言，金属氧化物微粒的原料粉末可列举：钒(III)乙酰丙酮化物、硝酸铋(III)、氢氧化铋(III)、硝酸氢氧化铋(III)、碳酸氧铋(III)、乙酸氧铋(III)、硫酸铋(III)、氯化铋(III)、七钼酸六铵四水合物、钨酸铵对五水合物、钒(V)酸铵、二氧化钼丙酮酸盐(Molybdenum dioxide acetonate)、钨酸、钼酸、同多钨酸、同多钼酸、同多钒酸等。这些原料粉末虽通过焙烧而变化成金属氧化物，但也考虑因焙烧条件而完全未变化为金属氧化物的情况。因此，在不影响本发明的效果的范围内，允许因焙烧条件等使得一些未反应成分或有机成分残留在金属氧化物微粒中。
作为将上述浆料涂布于基板上形成涂膜的方法，例如，可广泛采用旋转涂布、狭缝涂布、喷射、浸渍涂布等公知的涂布方法、丝网印刷、凹版印刷、胶版印刷、凸版印刷、柔性版印刷等公知的印刷方法。
另外，也可将形成含有金属氧化物微粒的浆料的涂膜的基板用作后述的本发明的指示器的基板(用于支撑变色层的基板)。
本发明的指示器中的变色层的厚度虽无限定，但优选为500nm～2mm左右，更优选为1～100μm左右。
支撑变色层的基材
本发明的指示器，还可以具有支撑上述变色层的基材。
作为基材，只要可形成及支撑变色层即可，并无特别限制。可使用例如：金属或合金、陶瓷、石英、玻璃、硅晶圆、混凝土、塑料(聚对苯二甲酸乙二醇酯(PET)、聚四氟乙烯(PTFE)、聚醚醚酮(PEEK)、聚丙烯、尼龙、聚苯乙烯、聚砜、聚碳酸酯、聚酰亚胺等)、纤维类(无纺布、纺布、玻璃纤维滤纸、其他纤维片材)、这些材料的复合材料等。此外，也可采用一般作为电子设备基板而公知的硅、砷化镓、碳化硅、蓝宝石、玻璃、氮化镓、锗等作为本发明的指示器的基材。基材的厚度可根据指示器的种类而进行适当设定。
非变色层
为了提高变色层的辨识性，本发明的指示器，也可以设置不因等离子体处理而变色的非变色层作为基底层。作为非变色层，需要具有耐热性且不会气体化。作为该非变色层，优选白色层、金属层等。
白色层可通过例如：氧化钛(IV)、氧化锆(IV)、氧化钇(III)、硫酸钡、氧化镁、二氧化硅、氧化铝等形成。
金属层可通过例如：铝、银、钇、锆、钛、铂等形成。
作为形成非变色层的方法，例如，除了物理气相沉积(PVD)、化学气相沉积(CVD)、溅射以外，也可通过调制含有成为非变色层的物质的浆料后，将该浆料涂布于基板上并蒸馏掉溶剂后在大气中焙烧而形成。作为将上述浆料涂布、印刷的方法，例如，可广泛采用旋转涂布、狭缝涂布、喷雾涂布、浸渍涂布、丝网印刷、凹版印刷、胶版印刷、凸版印刷、柔性版印刷等公知的涂布方法、印刷方法等。非变色层的厚度可根据指示器的种类进行适当设定。
本发明中，只要能确认等离子体处理的完成，变色层与非变色层不论如何组合皆可。例如，可以以通过变色层的变色而开始识别变色层与非变色层的色差的方式，形成变色层及非变色层；或者，以通过变色而开始使变色层与非变色层的色差消失的方式，形成变色层及非变色层。本发明中，特别优选以通过变色而开始识别变色层与非变色层的色差的方式，形成变色层及非变色层。
可识别色差时，例如以通过变色层的变色而开始显现文字、图案及记号中的至少一种的方式来形成变色层及非变色层即可。本发明中，文字、图案及记号，包括通知变色的所有信息。可根据使用目的等而适当设计这些文字等。
此外，也可以将变色前的变色层与非变色层设为相互不同的颜色。例如，也可设为将两者设为实质上相同的颜色，变色后能够开始识别变色层与非变色层的色差(对比度)的方式。
本发明中，作为层结构的优选方式，可列举例如：(i)变色层邻接形成于基材的至少一个主面上的指示器；(ii)在基材上依次形成有所述非变色层及所述变色层的指示器，其中，所述非变色层邻接形成于所述基材的主面上，所述变色层邻接形成于所述非变色层的主面上。
粘着层
根据需要，本发明的指示器可在背面(将指示器配置于等离子体处理装置内的底面时与该底面接触的面)上具有粘着层。通过在指示器的背面上具有粘着层，能够将本发明的指示器确实地固定于等离子体处理装置内的希望部位(例如供于等离子体处理的对象物、装置底面等)，因此优选。
作为粘着层的成分，优选其自身可抑制等离子体处理导致的气体化。作为这样的成分，例如，优选特殊粘着剂，其中，优选硅酮类粘着剂。
本发明的指示器的形状
本发明的指示器的形状并无特别限定，可广泛采用公知的等离子体处理检测指示器中采用的形状。其中，本发明的指示器的形状与电子设备制造装置中所使用的电子设备基板的形状相同时，作为所谓的虚拟基板，可简便地检测是否对电子设备基板整体均匀地进行等离子体处理。
在此，“指示器的形状与电子设备制造装置中所使用的电子设备基板的形状相同”，包括以下两种情况：(i)指示器的形状与电子设备制造装置中所使用的电子设备基板的形状完全相同；以及(ii)指示器的形状与电子设备制造装置中所使用的电子设备基板的形状，在可放置(嵌合)于进行等离子体处理的电子设备装置内的电子设备基板的设置位置的程度上实质上相同。
例如，上述(ii)中，“实质上相同”包括：相对于电子设备基板的主面的长度(基板的主面形状为圆形时，指直径；基板的主面形状为正方形、矩形等时，则指长及宽的长度)的、本发明的指示器的主面的长度的差在±5.0mm以内、相对于电子设备基板的本发明的指示器的厚度的差在±1000μm以内左右。
本发明指示器虽不限定于在电子设备制造装置中的使用，但在电子设备制造装置中使用时，优选用于通过等离子体处理进行选自由成膜工序、蚀刻工序、灰化工序、杂质添加工序及清洗工序组成的组中的至少一种工序的电子设备制造装置。
等离子体
作为等离子体，并无特别限定，可使用通过用于产生等离子体的气体而产生的等离子体。等离子体中，优选通过选自由氧、氮、氢、氯、氩、硅烷、氨、溴化硫、三氯化硼、溴化氢、水蒸气、一氧化二氮、四乙氧基硅烷、三氟化氮、四氟化碳、全氟环丁烷、二氟甲烷、三氟甲烷、四氯化碳、四氯化硅、六氟化硫、六氟乙烷、四氯化钛、二氯硅烷、三甲基镓、三甲基铟、及三甲基铝组成的组中的至少一种用于产生等离子体的气体而产生的等离子体。这些用于产生等离子体的气体中，特别优选选自由四氟化碳；全氟环丁烷；三氟甲烷；六氟化硫；氩与氧的混合气体组成的组中的至少一种。
等离子体可通过等离子体处理装置(通过在含有用于产生等离子体的气体的氛围下，施加交流电力、直流电力、脉冲电力、高频电力、微波电力等产生等离子体，从而进行等离子体处理的装置)而产生。特别是在电子设备制造装置中，在以下说明的成膜工序、蚀刻工序、灰化工序、杂质添加工序、清洗工序等中使用等离子体处理。
作为成膜工序，例如，在等离子体CVD(Chemical Vapor Depositon,化学气相成长)中，可同时使用等离子体及热能，并以400℃以下的低温下以较快的成长速度在半导体晶圆上使膜成长。具体而言，将材料气体导入减压的反应室，通过等离子体激发使气体自由基离子化，而进行反应。作为等离子体CVD，可列举出电容耦合型(阳极耦合型、平行平板型)、电感耦合型、ECR(Electron Cyclotron Resonance：电子回旋共振)型的等离子体。
作为其他成膜工序，可列举通过溅射而进行的成膜工序。作为具体的例示，在高频放电溅射装置内，在1Torr～10-4Torr左右的惰性气体(例如Ar)中在半导体晶圆与目标物之间施加几十V～几千v的电压，使离子化的Ar朝向目标物加速并冲撞，从而使目标物的物质溅射并堆积于半导体晶圆。此时，同时从目标物产生高能量的γ-电子，与Ar原子冲撞时使Ar原子离子化(Ar+)，从而使等离子体持续。
此外，作为其他成膜工序，可列举通过离子镀进行的成膜工序。作为具体的例示，使内部为10-5Torr～10-7Torr左右的高真空状态后，注入惰性气体(例如Ar)或反应性气体(氮、烃等)，从加工装置的热电子产生阴极(电子枪)将电子束朝向蒸镀材料进行放电，产生将离子与电子分离的等离子体。接着，通过电子束，将金属加热至高温，使其蒸发后，通过对已蒸发的金属颗粒施加正电压，在等离子体中使电子与金属颗粒冲撞，从而使金属颗粒成为阳离子，朝向被加工物前进，并且金属颗粒与反应性气体结合，化学反应被促进。化学反应被促进的颗粒，朝向施加了负电子的被加工物加速，从而以高能量冲撞，并以金属化合物的形式堆积在表面。另外，与离子镀类似的蒸镀法也可作为成膜工序而被列举。
进一步，作为氧化、氮化工序，可列举出通过利用ECR等离子体、表面波等离子体进行的等离子体氧化，从而使半导体晶圆表面变换为氧化膜的方法；或导入氨气，通过等离子体激起而使所述氨气电离、分解、离子化，从而使半导体晶圆表面变换为氮化膜的方法等。
在蚀刻工序中，例如，利用下述效果：在反应性离子蚀刻装置(RIE)中，将圆形平板电极平行相对，将反应气体导入减压反应室(室(chamber))，通过等离子体激起而使导入气体中性自由基化或离子化而在电极间生成，通过这些自由基或离子与半导体晶圆上的材料的化学反应而进行挥发物质化的蚀刻及物理性溅射这两者的效果。此外，作为等离子体蚀刻装置，除了上述平行平板型外，也可列举出桶型(圆筒型)。
作为其他的蚀刻工序，可列举出逆溅射。逆溅射虽原理与所述溅射类似，但为在等离子体中的经离子化的Ar与半导体晶圆冲撞、进行蚀刻的方法。此外，与逆溅射类似的离子束蚀刻，也可作为蚀刻工序而被列举。
在灰化工序中，例如，使用在减压下使氧气等离子体激起而成的氧等离子体，从而分解及挥发光刻胶。
在杂质添加工序中，例如，将含有掺杂的杂质原子的气体导入减压室内，使等离子体激起，使杂质离子化，对于半导体晶圆施加负偏压，从而掺杂杂质离子。
清洗工序，为在对半导体晶圆进行各工序前，在不损伤半导体晶圆的情况下去除半导体晶圆上附着的异物的工序，可列举例如，利用氧气等离子体进行化学反应的等离子体清洗、或利用惰性气体(氩等)等离子体进行物理性去除的等离子体清洗(逆溅射)等。
实施例
以下表示实施例及比较例，从而具体说明本发明。
以下的实施例及比较例中，使用下述的试料(皆为氧化铋(III))。
·试料1：Bi2O3微粒(平均粒径0.05μm)
·试料2：Bi2O3微粒(平均粒径0.20μm)
·试料3：Bi2O3微粒(平均粒径3.20μm)
·试料4：Bi2O3微粒(平均粒径7.80μm)
·试料5：Bi2O3微粒(平均粒径12.7μm)
·试料6：Bi2O3微粒(平均粒径21.2μm)
·试料7：Bi2O3微粒(平均粒径51.8μm；比较例)
准备下述表1所示的组成的浆料，将其涂布在聚酰亚胺膜上，从而在聚酰亚胺膜上印刷厚度为20μm的Bi2O3微粒的涂膜。由此，制作出在聚酰亚胺膜上层叠有薄膜的变色层的指示器。
[表1]
| 物质名 | Wt％ |
| 氧化铋(III) | 30 |
| 无机类增量剂 | 3 |
| 丁醛树脂 | 7 |
| 丁基溶纤剂 | 60 |
| 合计 | 100 |
试验例1
图1是电感耦合等离子体(ICP；Inductively Coupled Plasma)型的等离子体蚀刻装置的截面示意图。
本装置具备可将内部真空排气的室与载置作为被处理物的晶圆的试料台。室具备用于导入反应性气体的气体导入口及用于进行真空排气的排气口。试料台具备用于静电吸附晶圆的静电吸附用电源及用于冷却晶圆的制冷剂进行循环的冷却机构。在室的上部配置有等离子体激起用的线圈与作为上部电极的高频电源。
实际实施蚀刻时，晶圆被从晶圆搬入口搬入室内后，通过静电吸附电源被静电吸附于试料台。接着，将反应性气体导入室。室内，利用真空泵被减压排气，从而调整为规定的压力。接着，对上部电极施加高频电力，通过激起反应性气体而在晶圆上部的空间形成等离子体。此外，通过与试料台连接的高频电源，也可能施加偏压，此时，等离子体中的离子会加速入射至晶圆上。通过这些产生的等离子体激起种的作用将晶圆表面蚀刻。另外，等离子体处理中，氦气在设置于试料台的冷却机构中流动，使晶圆冷却。
试验例1中，将试料2(平均粒径0.20μm)、试料4(平均粒径7.80μm)及试料6(平均粒径21.2μm)中所制作的指示器载置于本装置内，并分别导入氩气(Ar)、四氟化碳(CF4)、氧气(O2)、氩气与氧气的混合气体(Ar/O2)作为反应性气体，对于以12种模式进行等离子体处理的情况，评价各指示器的变色层的变色性。
表2表示等离子体处理的条件。
[表2]
| Ar等离子体 | CF<sub>4</sub>等离子体 | O<sub>2</sub>等离子体 | Ar/O<sub>2</sub>等离子体 | |
| 气体种类 | Ar | CF<sub>4</sub> | O<sub>2</sub> | Ar/O<sub>2</sub> |
| 流量(sccm) | 50 | 30 | 100 | Ar：25,O<sub>2</sub>：50 |
| 压力(Pa) | 5 | 2 | 10 | 7.5 |
| 电力(W) | 800 | 500 | 500 | 600 |
| 时间(min) | 10 | 3 | 10 | 10 |
| 基板冷却 | 有 | 有 | 有 | 有 |
图2表示Bi2O3微粒的平均粒径与色差(ΔE)的关系。由图2的结果可明确得知，平均粒径越小，因等离子体处理而带来的变色性(感受性)越高，ΔE越大。
试验例2
图3是电容耦合等离子体(平行平板型；Capacitively Coupled Plasma)型的等离子体蚀刻装置的截面示意图。
本装置在真空容器内设置有平行平板型的电极，上部电极形成为淋浴结构，使反应性气体以淋浴状被供给至被处理物表面。
实际实施蚀刻时，使真空容器内排气后，从上部电极淋浴部导入反应性气体，另外，通过由上部电极供给的高频电力，在平行平板电极内的空间产生等离子体，并通过利用所产生的激起种进行的在被处理物表面的化学反应，进行蚀刻。
试验例2中，将试料1～7中所制作的指示器载置于本装置内，导入氩气(Ar)作为反应性气体，对等离子体处理时各指示器的变色层的变色性进行评价。
表3表示等离子体处理的条件。
[表3]
| Ar等离子体 | |
| 气体种类 | Ar |
| 流量(sccm) | 10 |
| 压力(Pa) | 10 |
| 电力(W) | 50 |
| 时间(min) | 10 |
| 基板冷却 | 水冷 |
图4表示Bi2O3微粒的平均粒径与色差(ΔE)的关系。由图4的结果可明确得知，平均粒径越小，因等离子体处理而带来的变色性(感受性)越高，ΔE越大。
Claims (9)
1.一种等离子体处理检测指示器，其具有通过等离子体处理而变色的变色层，其中，所述变色层含有金属氧化物微粒作为变色材料，所述金属氧化物微粒含有选自由Mo、W、V、Ce、Te及Bi组成的组中的至少一种元素，且平均粒径为50μm以下。
2.根据权利要求1所述的等离子体处理检测指示器，其中，所述金属氧化物微粒为选自由MoO2微粒、MoO3微粒、WO3微粒、VO微粒、V2O3微粒、VO2微粒、V2O5微粒、CeO2微粒、TeO2微粒及Bi2O3微粒组成的组中的至少一种。
3.根据权利要求1或2所述的等离子体处理检测指示器，其中，所述金属氧化物微粒为选自由MoO3微粒、WO3微粒、V2O3微粒、V2O5微粒及Bi2O3微粒组成的组中的至少一种。
4.根据权利要求1所述的等离子体处理检测指示器，其为在电子设备制造装置中使用的指示器。
5.根据权利要求4所述的等离子体处理检测指示器，其中，所述指示器的形状与在所述电子设备制造装置中所使用的电子设备基板的形状相同。
6.根据权利要求4或5所述的等离子体处理检测指示器，其中，所述电子设备制造装置，进行选自由成膜工序、蚀刻工序、灰化工序、杂质添加工序及清洗工序组成的组中的至少一种的等离子体处理。
7.根据权利要求1所述的等离子体处理检测指示器，其具有不因等离子体处理而变色的非变色层。
8.根据权利要求7所述的等离子体处理检测指示器，其中，所述非变色层含有选自由TiO2、ZrO2、Y2O3、硫酸钡、氧化镁、二氧化硅、氧化铝、铝、银、钇、锆、钛、铂组成的组中的至少一种。
9.根据权利要求7或8所述的等离子体处理检测指示器，其具有支撑所述变色层的基材，所述基材上依次形成有所述非变色层及所述变色层，所述非变色层邻接形成于所述基材的主面上，所述变色层邻接形成于所述非变色层的主面上。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014244416A JP2016111063A (ja) | 2014-12-02 | 2014-12-02 | 変色層として金属酸化物微粒子を使用したプラズマ処理検知インジケータ |
| JP2014-244416 | 2014-12-02 | ||
| PCT/JP2015/082818 WO2016088590A1 (ja) | 2014-12-02 | 2015-11-24 | 変色層として金属酸化物微粒子を使用したプラズマ処理検知インジケータ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107078053A CN107078053A (zh) | 2017-08-18 |
| CN107078053B true CN107078053B (zh) | 2021-02-26 |
Family
ID=56091540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580063223.5A Expired - Fee Related CN107078053B (zh) | 2014-12-02 | 2015-11-24 | 使用有金属氧化物微粒作为变色层的等离子体处理检测指示器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20170330777A1 (zh) |
| JP (1) | JP2016111063A (zh) |
| KR (1) | KR20170091092A (zh) |
| CN (1) | CN107078053B (zh) |
| TW (1) | TW201633401A (zh) |
| WO (1) | WO2016088590A1 (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI624890B (zh) | 2013-08-22 | 2018-05-21 | Sakura Color Prod Corp | Indicator for electronic component manufacturing apparatus, and design and/or management method of the same |
| KR102342177B1 (ko) | 2014-02-14 | 2021-12-21 | 사쿠라 컬러 프로덕츠 코포레이션 | 플라즈마 처리 감지 표시기 |
| JP2015205995A (ja) | 2014-04-21 | 2015-11-19 | 株式会社サクラクレパス | プラズマ処理検知用インキ組成物及びプラズマ処理検知インジケータ |
| KR102296893B1 (ko) | 2014-05-09 | 2021-08-31 | 사쿠라 컬러 프로덕츠 코포레이션 | 무기 물질을 변색층으로 사용한 플라스마 처리 감지 표시기 |
| JP6567863B2 (ja) | 2014-09-16 | 2019-08-28 | 株式会社サクラクレパス | プラズマ処理検知用インキ組成物及びプラズマ処理検知インジケータ |
| JP6567817B2 (ja) | 2014-12-02 | 2019-08-28 | 株式会社サクラクレパス | プラズマ処理検知インキ組成物及びそれを用いたプラズマ処理検知インジケータ |
| JP6548042B2 (ja) * | 2016-12-15 | 2019-07-24 | 三菱重工機械システム株式会社 | 成膜判定装置、成膜判定方法、および成膜判定システム |
| JP6889471B2 (ja) * | 2017-04-24 | 2021-06-18 | 株式会社サクラクレパス | プラズマインジケータ |
| JP6842699B2 (ja) * | 2017-05-22 | 2021-03-17 | 株式会社サクラクレパス | プラズマ処理検知用組成物及びそれを用いたプラズマ処理検知インジケータ |
| CN109839388A (zh) * | 2017-11-29 | 2019-06-04 | 中微半导体设备(上海)股份有限公司 | 等离子运行状态实时监控方法、晶圆监测件和监控系统 |
| JP7043066B2 (ja) * | 2018-05-15 | 2022-03-29 | 株式会社サクラクレパス | プラズマインジケータ |
| WO2020027345A1 (ja) * | 2019-08-29 | 2020-02-06 | 株式会社 イアス | 金属微粒子の分析方法および誘導結合プラズマ質量分析方法 |
| US11398388B2 (en) * | 2020-09-08 | 2022-07-26 | Applied Materials, Inc. | Methods for selective dry etching gallium oxide |
| CN112986250B (zh) * | 2021-02-03 | 2022-03-04 | 大连理工大学 | 一种评价醇盐法氧化铝是否满足生长无色蓝宝石的方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002323451A (ja) * | 2001-04-26 | 2002-11-08 | Osao Kobayashi | 滅菌インジケータ組成物 |
| JP2005142287A (ja) * | 2003-11-05 | 2005-06-02 | Sakura Color Prod Corp | 通電変色性電気回路板 |
| CN1758926A (zh) * | 2003-03-31 | 2006-04-12 | 藤森工业株式会社 | 等离子体消毒用指示剂和消毒用包装材料 |
| CN101856504A (zh) * | 2010-07-06 | 2010-10-13 | 成都老肯科技有限公司 | 一种用于过氧化氢等离子体灭菌器的灭菌效果检测装置 |
| WO2012043722A1 (ja) * | 2010-10-01 | 2012-04-05 | 株式会社サクラクレパス | 過酸化水素滅菌又は過酸化水素プラズマ滅菌検知インジケーター |
| JP2013098196A (ja) * | 2011-10-28 | 2013-05-20 | Sakura Color Products Corp | プラズマ処理検知用インキ組成物及びプラズマ処理検知インジケーター |
| JP2014109523A (ja) * | 2012-12-03 | 2014-06-12 | Sakura Color Products Corp | 過酸化水素ガス検知用インキ組成物及び過酸化水素ガス検知インジケーター |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077060B (zh) * | 2008-06-04 | 2014-10-29 | G·帕特尔 | 一种基于腐蚀金属的监测系统 |
| JP6083221B2 (ja) * | 2012-02-06 | 2017-02-22 | セイコーエプソン株式会社 | インクジェット記録方法 |
| WO2013129473A1 (ja) * | 2012-02-29 | 2013-09-06 | 日油技研工業株式会社 | 過酸化物検知インジケータ |
-
2014
- 2014-12-02 JP JP2014244416A patent/JP2016111063A/ja active Pending
-
2015
- 2015-11-24 KR KR1020177013404A patent/KR20170091092A/ko not_active Application Discontinuation
- 2015-11-24 WO PCT/JP2015/082818 patent/WO2016088590A1/ja active Application Filing
- 2015-11-24 CN CN201580063223.5A patent/CN107078053B/zh not_active Expired - Fee Related
- 2015-11-24 US US15/529,404 patent/US20170330777A1/en not_active Abandoned
- 2015-11-27 TW TW104139747A patent/TW201633401A/zh unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002323451A (ja) * | 2001-04-26 | 2002-11-08 | Osao Kobayashi | 滅菌インジケータ組成物 |
| CN1758926A (zh) * | 2003-03-31 | 2006-04-12 | 藤森工业株式会社 | 等离子体消毒用指示剂和消毒用包装材料 |
| JP2005142287A (ja) * | 2003-11-05 | 2005-06-02 | Sakura Color Prod Corp | 通電変色性電気回路板 |
| CN101856504A (zh) * | 2010-07-06 | 2010-10-13 | 成都老肯科技有限公司 | 一种用于过氧化氢等离子体灭菌器的灭菌效果检测装置 |
| WO2012043722A1 (ja) * | 2010-10-01 | 2012-04-05 | 株式会社サクラクレパス | 過酸化水素滅菌又は過酸化水素プラズマ滅菌検知インジケーター |
| JP2013098196A (ja) * | 2011-10-28 | 2013-05-20 | Sakura Color Products Corp | プラズマ処理検知用インキ組成物及びプラズマ処理検知インジケーター |
| JP2014109523A (ja) * | 2012-12-03 | 2014-06-12 | Sakura Color Products Corp | 過酸化水素ガス検知用インキ組成物及び過酸化水素ガス検知インジケーター |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201633401A (zh) | 2016-09-16 |
| US20170330777A1 (en) | 2017-11-16 |
| JP2016111063A (ja) | 2016-06-20 |
| KR20170091092A (ko) | 2017-08-08 |
| CN107078053A (zh) | 2017-08-18 |
| WO2016088590A1 (ja) | 2016-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107078053B (zh) | 使用有金属氧化物微粒作为变色层的等离子体处理检测指示器 | |
| CN106233434B (zh) | 使用有无机物质作为变色层的等离子体处理检测指示器 | |
| CN107001837B (zh) | 等离子体处理检测油墨组合物以及使用其的等离子体处理检测指示器 | |
| KR100830388B1 (ko) | 막 형성 장치 및 막 형성 방법 | |
| KR100897176B1 (ko) | 유도 결합형 플라즈마 처리 장치 | |
| EP3142467B1 (en) | Large area, uniform, atmospheric pressure plasma processing device and method using the device | |
| WO2010069594A1 (de) | Verfahren und vorrichtung zur beschichtung von gegenständen mittels eines niederdruckplasmas | |
| JP6842699B2 (ja) | プラズマ処理検知用組成物及びそれを用いたプラズマ処理検知インジケータ | |
| TW201529141A (zh) | 自清潔真空處理腔室 | |
| JP2006236747A (ja) | 透明電極及び透明電極の製造方法 | |
| JP6846040B2 (ja) | プラズマ処理検知用組成物及びそれを用いたプラズマ処理検知インジケータ | |
| JPH03204925A (ja) | プラズマプロセス用装置および方法 | |
| US9909208B2 (en) | Method for developing a coating having a high light transmission and/or a low light reflection | |
| US11613808B2 (en) | Clean processes for boron carbon film deposition | |
| WO2017204189A1 (ja) | プラズマ処理検知用組成物及びそれを用いたプラズマ処理検知インジケータ | |
| Tang et al. | Surface oxidation of multicrystalline silicon using atmospheric pressure plasma jet driven by radio frequency of 2.0 MHz | |
| JP2007204819A (ja) | 金属酸化物成膜装置及び金属酸化物成膜方法 | |
| JP2023109166A (ja) | 酸化物の製造方法及びその製造装置 | |
| 박주연 | Investigation of Metal Oxide Thin Films and Nanofibers by Electron Emission Spectroscopy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210226 Termination date: 20211124 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |