CN107077074B - 投射镜头、投射曝光设备和euv微光刻的投射曝光方法 - Google Patents

投射镜头、投射曝光设备和euv微光刻的投射曝光方法 Download PDF

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Publication number
CN107077074B
CN107077074B CN201580049768.0A CN201580049768A CN107077074B CN 107077074 B CN107077074 B CN 107077074B CN 201580049768 A CN201580049768 A CN 201580049768A CN 107077074 B CN107077074 B CN 107077074B
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China
Prior art keywords
projection lens
mirror
mask
projection
object plane
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CN201580049768.0A
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Chinese (zh)
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CN107077074A (zh
Inventor
S.安德烈
D.戈尔德
T.格鲁纳
J.劳夫
N.瓦布拉
R.舍梅
S.施耐德
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201580049768.0A 2014-09-15 2015-09-07 投射镜头、投射曝光设备和euv微光刻的投射曝光方法 Active CN107077074B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010179331.1A CN111505909A (zh) 2014-09-15 2015-09-07 投射镜头、投射曝光设备和euv微光刻的投射曝光方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014218474.6A DE102014218474A1 (de) 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
DE102014218474.6 2014-09-15
PCT/EP2015/070391 WO2016041805A1 (en) 2014-09-15 2015-09-07 Projection lens, projection exposure apparatus and projection exposure method for euv microlithography

Related Child Applications (1)

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CN202010179331.1A Division CN111505909A (zh) 2014-09-15 2015-09-07 投射镜头、投射曝光设备和euv微光刻的投射曝光方法

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CN107077074A CN107077074A (zh) 2017-08-18
CN107077074B true CN107077074B (zh) 2020-04-10

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CN202010179331.1A Pending CN111505909A (zh) 2014-09-15 2015-09-07 投射镜头、投射曝光设备和euv微光刻的投射曝光方法

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Country Status (8)

Country Link
US (2) US10048592B2 (cg-RX-API-DMAC7.html)
EP (1) EP3195060B1 (cg-RX-API-DMAC7.html)
JP (2) JP6714595B2 (cg-RX-API-DMAC7.html)
KR (1) KR102469060B1 (cg-RX-API-DMAC7.html)
CN (2) CN107077074B (cg-RX-API-DMAC7.html)
DE (1) DE102014218474A1 (cg-RX-API-DMAC7.html)
TW (2) TWI714278B (cg-RX-API-DMAC7.html)
WO (1) WO2016041805A1 (cg-RX-API-DMAC7.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
DE102016205072A1 (de) * 2016-03-29 2017-03-16 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie
DE102016212477A1 (de) 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102016219330A1 (de) 2016-10-06 2018-04-12 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zur Verringerung aus dynamischen Beschleunigungen herrührenden Deformationen von Komponenten der Projektionsbelichtungsanlage
WO2018134010A1 (en) * 2017-01-17 2018-07-26 Asml Netherlands B.V. Lithographic apparatus and method
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
CN111213090B (zh) * 2017-10-11 2024-04-09 Asml荷兰有限公司 图案化过程的优化流程
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP2019124796A (ja) * 2018-01-16 2019-07-25 キヤノン株式会社 結像光学系、画像投射装置およびカメラシステム
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
CN111381431B (zh) * 2020-05-11 2021-04-13 江苏舜合物联网科技有限公司 投影画面跟随可卷曲屏幕同步升降或同步平移的实现方法
JP2022022912A (ja) * 2020-07-10 2022-02-07 キヤノン株式会社 露光装置および物品製造方法
CN113031201B (zh) * 2021-03-15 2022-02-11 中国科学院长春光学精密机械与物理研究所 一种在轨补偿主镜曲率半径误差影响的调整方法
DE102022208204A1 (de) 2022-08-08 2023-08-31 Carl Zeiss Smt Gmbh Verfahren zur Kompensation von Abbildungsfehlern einer EUV-Projektionsbelichtungsanlage
JP2024083066A (ja) 2022-12-09 2024-06-20 株式会社ニューフレアテクノロジー 位置計測装置、荷電粒子ビーム描画装置、及びマーク位置計測方法
DE102023130957A1 (de) * 2023-11-08 2025-05-08 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen wenigstens eines Manipulatorfreiheitsgrads, Verfahren zum Definieren wenigstens eines virtuellen Manipulators, Verfahren zum Betrieb einer Projektionsbelichtungsanlage sowie Projektionsbelichtungsanlage
CN121978828B (zh) * 2026-04-08 2026-07-17 中国科学院西安光学精密机械研究所 一种大角度紧凑型快速反射镜及其控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1573556A (zh) * 2003-04-04 2005-02-02 Asml荷兰有限公司 Z偏移和不垂直照射产生的掩膜物体的y移位中的位置校正
US20130128251A1 (en) * 2010-09-15 2013-05-23 Carl Zeiss Smt Gmbh Imaging optical system

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999026278A1 (en) 1997-11-14 1999-05-27 Nikon Corporation Exposure apparatus and method of manufacturing the same, and exposure method
DE19908526A1 (de) * 1999-02-26 2000-08-31 Zeiss Carl Fa Beleuchtungssystem mit Feldspiegeln zur Erzielung einer gleichförmigen Scanenergie
JP2000100685A (ja) * 1998-09-17 2000-04-07 Nikon Corp 露光装置及び該装置を用いた露光方法
JP2004023020A (ja) * 2002-06-20 2004-01-22 Nikon Corp 投影光学系及び縮小投影露光装置
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
DE102004014766A1 (de) 2003-04-02 2004-10-21 Carl Zeiss Smt Ag Verfahren zur Verzeichnungskorrektur in einer mikrolithographischen Projektionsbelichtungsanlage
JP2005166778A (ja) * 2003-12-01 2005-06-23 Canon Inc 露光装置、デバイスの製造方法
US7522260B1 (en) * 2004-09-29 2009-04-21 Carl Zeiss Smt Ag Method for correcting astigmatism in a microlithography projection exposure apparatus, a projection objective of such a projection exposure apparatus, and a fabrication method for micropatterned components
JP5069232B2 (ja) * 2005-07-25 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の投影対物レンズ
EP1924888B1 (en) 2005-09-13 2013-07-24 Carl Zeiss SMT GmbH Microlithography projection optical system, method for manufacturing a device and method to design an optical surface
CN100474115C (zh) 2006-04-04 2009-04-01 上海微电子装备有限公司 光刻机成像光学系统像差现场测量方法
US7894038B2 (en) * 2007-03-14 2011-02-22 Asml Netherlands B.V. Device manufacturing method, lithographic apparatus, and a computer program
EP2048540A1 (en) * 2007-10-09 2009-04-15 Carl Zeiss SMT AG Microlithographic projection exposure apparatus
NL1036108A1 (nl) * 2007-11-09 2009-05-12 Asml Netherlands Bv Device Manufacturing Method and Lithographic Apparatus, and Computer Program Product.
JP2009266886A (ja) * 2008-04-22 2009-11-12 Nikon Corp マスク、マスク保持装置、露光装置及びデバイスの製造方法
JP2009302149A (ja) * 2008-06-10 2009-12-24 Nikon Corp 露光装置およびデバイスの製造方法
JP2010245331A (ja) 2009-04-07 2010-10-28 Canon Inc 制御装置を備える光学素子駆動装置
DE102010029651A1 (de) 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
DE102011080437A1 (de) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Abbildendes optisches System für die Mikrolithographie
JP6410406B2 (ja) * 2012-11-16 2018-10-24 キヤノン株式会社 投影光学系、露光装置および物品の製造方法
JP6013930B2 (ja) * 2013-01-22 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2014154721A (ja) 2013-02-08 2014-08-25 Toshiba Corp フォトマスク、フォトマスク作成装置およびフォトマスクの作製方法
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1573556A (zh) * 2003-04-04 2005-02-02 Asml荷兰有限公司 Z偏移和不垂直照射产生的掩膜物体的y移位中的位置校正
US20130128251A1 (en) * 2010-09-15 2013-05-23 Carl Zeiss Smt Gmbh Imaging optical system

Also Published As

Publication number Publication date
EP3195060B1 (en) 2018-09-05
KR102469060B1 (ko) 2022-11-22
TWI714278B (zh) 2020-12-21
TWI681258B (zh) 2020-01-01
JP2017528775A (ja) 2017-09-28
CN111505909A (zh) 2020-08-07
TW202004367A (zh) 2020-01-16
JP2020149070A (ja) 2020-09-17
KR20170053713A (ko) 2017-05-16
US20180364583A1 (en) 2018-12-20
US20170168399A1 (en) 2017-06-15
TW201621470A (zh) 2016-06-16
CN107077074A (zh) 2017-08-18
EP3195060A1 (en) 2017-07-26
DE102014218474A1 (de) 2016-03-17
WO2016041805A1 (en) 2016-03-24
JP7208953B2 (ja) 2023-01-19
US10048592B2 (en) 2018-08-14
US10591825B2 (en) 2020-03-17
JP6714595B2 (ja) 2020-06-24

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