CN107075309B - 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 - Google Patents
浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 Download PDFInfo
- Publication number
- CN107075309B CN107075309B CN201580047704.7A CN201580047704A CN107075309B CN 107075309 B CN107075309 B CN 107075309B CN 201580047704 A CN201580047704 A CN 201580047704A CN 107075309 B CN107075309 B CN 107075309B
- Authority
- CN
- China
- Prior art keywords
- water
- polyvinyl alcohol
- composition
- polishing
- slurry composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3753—Polyvinylalcohol; Ethers or esters thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Dispersion Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Materials Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-181015 | 2014-09-05 | ||
| JP2014181015A JP6559936B2 (ja) | 2014-09-05 | 2014-09-05 | スラリー組成物、リンス組成物、基板研磨方法およびリンス方法 |
| PCT/JP2015/004504 WO2016035346A1 (en) | 2014-09-05 | 2015-09-04 | Slurry composition, rinse composition, substrate polishing method and rinsing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107075309A CN107075309A (zh) | 2017-08-18 |
| CN107075309B true CN107075309B (zh) | 2020-09-01 |
Family
ID=54197031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580047704.7A Active CN107075309B (zh) | 2014-09-05 | 2015-09-04 | 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6559936B2 (enExample) |
| KR (1) | KR102524838B1 (enExample) |
| CN (1) | CN107075309B (enExample) |
| TW (1) | TWI633178B (enExample) |
| WO (1) | WO2016035346A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6801964B2 (ja) * | 2016-01-19 | 2020-12-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びシリコン基板の研磨方法 |
| JP6971676B2 (ja) * | 2016-08-29 | 2021-11-24 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
| JP7050684B2 (ja) * | 2016-08-31 | 2022-04-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨用組成物セット |
| JP6495230B2 (ja) | 2016-12-22 | 2019-04-03 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
| KR102508181B1 (ko) * | 2016-12-28 | 2023-03-09 | 니타 듀퐁 가부시키가이샤 | 연마용 조성물 및 연마 방법 |
| KR102825101B1 (ko) * | 2016-12-28 | 2025-06-26 | 니타 듀퐁 가부시키가이샤 | 연마용 조성물 |
| WO2019187969A1 (ja) * | 2018-03-30 | 2019-10-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7361467B2 (ja) * | 2018-12-25 | 2023-10-16 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| JP2020203980A (ja) * | 2019-06-17 | 2020-12-24 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
| CN112457930A (zh) * | 2019-09-06 | 2021-03-09 | 福吉米株式会社 | 表面处理组合物、表面处理组合物的制造方法、表面处理方法和半导体基板的制造方法 |
| JP7495283B2 (ja) * | 2019-09-06 | 2024-06-04 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法 |
| JP7477964B2 (ja) * | 2019-12-13 | 2024-05-02 | インテグリス・インコーポレーテッド | 化学機械研磨組成物及びそれを用いた化学機械研磨方法 |
| JP7495317B2 (ja) * | 2020-09-25 | 2024-06-04 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法 |
| JP7645682B2 (ja) * | 2021-03-31 | 2025-03-14 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理組成物の製造方法、表面処理方法、及び半導体基板の製造方法 |
| KR102728251B1 (ko) * | 2021-12-31 | 2024-11-11 | 주식회사 케이씨텍 | 컨택 공정용 금속막 슬러리 조성물 |
| KR20230106938A (ko) * | 2022-01-07 | 2023-07-14 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| CN115873508A (zh) * | 2022-12-26 | 2023-03-31 | 博力思(天津)电子科技有限公司 | 去除速率高且表面粗糙度低的SiC衬底抛光液及抛光工艺 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11140427A (ja) * | 1997-11-13 | 1999-05-25 | Kobe Steel Ltd | 研磨液および研磨方法 |
| CN1384860A (zh) * | 1999-11-04 | 2002-12-11 | 先进微装置公司 | 含有机添加剂的钽障壁浆液 |
| CN1613941A (zh) * | 2003-09-05 | 2005-05-11 | 福吉米株式会社 | 抛光组合物 |
| CN1721515A (zh) * | 2004-06-18 | 2006-01-18 | 福吉米株式会社 | 清洗组合物及清洗和制造硅片的方法 |
| TW201350563A (zh) * | 2012-03-14 | 2013-12-16 | Fujimi Inc | 研磨用組成物及半導體基板之製造方法 |
| TW201412960A (zh) * | 2012-05-25 | 2014-04-01 | Nissan Chemical Ind Ltd | 晶圓用研磨液組成物 |
| TW201527506A (zh) * | 2013-10-25 | 2015-07-16 | Kao Corp | 矽晶圓用研磨液組合物 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011158718A1 (ja) * | 2010-06-18 | 2011-12-22 | 日立化成工業株式会社 | 半導体基板用研磨液及び半導体ウエハの製造方法 |
| JP2014038906A (ja) * | 2012-08-13 | 2014-02-27 | Fujimi Inc | 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法 |
-
2014
- 2014-09-05 JP JP2014181015A patent/JP6559936B2/ja active Active
-
2015
- 2015-09-04 WO PCT/JP2015/004504 patent/WO2016035346A1/en not_active Ceased
- 2015-09-04 KR KR1020177008862A patent/KR102524838B1/ko active Active
- 2015-09-04 TW TW104129403A patent/TWI633178B/zh active
- 2015-09-04 CN CN201580047704.7A patent/CN107075309B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11140427A (ja) * | 1997-11-13 | 1999-05-25 | Kobe Steel Ltd | 研磨液および研磨方法 |
| CN1384860A (zh) * | 1999-11-04 | 2002-12-11 | 先进微装置公司 | 含有机添加剂的钽障壁浆液 |
| CN1613941A (zh) * | 2003-09-05 | 2005-05-11 | 福吉米株式会社 | 抛光组合物 |
| CN1721515A (zh) * | 2004-06-18 | 2006-01-18 | 福吉米株式会社 | 清洗组合物及清洗和制造硅片的方法 |
| TW201350563A (zh) * | 2012-03-14 | 2013-12-16 | Fujimi Inc | 研磨用組成物及半導體基板之製造方法 |
| TW201412960A (zh) * | 2012-05-25 | 2014-04-01 | Nissan Chemical Ind Ltd | 晶圓用研磨液組成物 |
| TW201527506A (zh) * | 2013-10-25 | 2015-07-16 | Kao Corp | 矽晶圓用研磨液組合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170048513A (ko) | 2017-05-08 |
| WO2016035346A1 (en) | 2016-03-10 |
| CN107075309A (zh) | 2017-08-18 |
| JP2016056220A (ja) | 2016-04-21 |
| TW201615797A (zh) | 2016-05-01 |
| KR102524838B1 (ko) | 2023-04-24 |
| TWI633178B (zh) | 2018-08-21 |
| JP6559936B2 (ja) | 2019-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107075309B (zh) | 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 | |
| JP6306383B2 (ja) | スラリー組成物および基板研磨方法 | |
| EP2957613B1 (en) | Polishing composition, method for producing polishing composition and method for producing polished article | |
| JP7534283B2 (ja) | 研磨用組成物 | |
| JP2008532329A (ja) | シリコンウエハの表面品質を改善する研磨用スラリー組成物、及びそれを用いたシリコンウエハの研磨方法 | |
| US20230040738A1 (en) | Polishing composition | |
| KR20200098547A (ko) | 연마용 조성물 | |
| JPWO2015046090A1 (ja) | 研磨用組成物、研磨用組成物の製造方法およびシリコンウェーハ製造方法 | |
| KR102713915B1 (ko) | 레이저마크 주변의 융기를 해소하기 위한 연마용 조성물 | |
| JP7349309B2 (ja) | シリコンウェーハ用研磨用組成物 | |
| US11384257B2 (en) | Chemical-mechanical polishing composition, rinse composition, chemical-mechanical polishing method, and rinsing method | |
| JPWO2018096991A1 (ja) | 研磨用組成物 | |
| KR20140019327A (ko) | 연마용 조성물 및 그것을 이용한 연마 방법 | |
| WO2018124230A1 (ja) | 研磨用組成物 | |
| JP2020027834A (ja) | シリコンウェーハ研磨用組成物 | |
| CN106233424A (zh) | 硅晶圆研磨用组合物 | |
| TW202033689A (zh) | 研磨用組合物 | |
| JP7588066B2 (ja) | 研磨用組成物 | |
| CN117778115A (zh) | 用于含硅基材的原位清洗组合物及原位清洗方法 | |
| JP7450532B2 (ja) | 研磨用組成物 | |
| JP2016207875A (ja) | 研磨方法 | |
| JP7584893B2 (ja) | 研磨用組成物及びシリコンウェーハの研磨方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Mie, Japan Patentee after: CMC Materials Co.,Ltd. Address before: Mie, Japan Patentee before: NIHON CABOT MICROELECTRONICS Kabushiki Kaisha |
|
| CP01 | Change in the name or title of a patent holder |