CN107039409A - 包括多个电势面的功率电子开关器件 - Google Patents
包括多个电势面的功率电子开关器件 Download PDFInfo
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- CN107039409A CN107039409A CN201611020170.1A CN201611020170A CN107039409A CN 107039409 A CN107039409 A CN 107039409A CN 201611020170 A CN201611020170 A CN 201611020170A CN 107039409 A CN107039409 A CN 107039409A
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Abstract
涉及一种包括多个电势面的功率电子开关器件。提出了一种功率电子开关器件,该功率电子开关器件形成有基板,该基板具有多个电势面,其中至少两个不同的电势分别被分配给所述电势面中的至少一个,其中在由第一电势的至少一个电势面形成的第一导体轨道上,多个半导体部件以n×m矩阵在x‑y方向上定向地布置,所述多个半导体部件相互并联连接并且形成电流阀。在这种情况下,半导体部件能够分布在第一电势的多个电势面之间,所述第一电势的多个电势面形成第一导体轨道。
Description
技术领域
本发明描述了一种作为功率半导体模块或更复杂的功率电子系统的基本元件的那种功率电子开关器件(power electronic switching device)。在这里,单个电流阀被视为基础,虽然本发明的概念当然也直接可适用于例如以半桥或全桥拓扑结构(举例来说)布置在功率半导体模块内的多个电流阀。
背景技术
被视为基础的现有技术例如由DE 10 2014 102 018 B3形成。后者公开了包括两个电流阀的功率电子开关器件,所述两个电流阀各自分别在电势面上,所述电势面形成为本领域中的常规基板的相应的导体轨道(conductor track)。电流阀在每种情况下由多个并联连接的半导体部件(在这里,IGBT和反并联连接的二极管)形成。在这里,IGBT的以及二极管的在每种情况下背向基板的第二负载接触面借助于键合引线直接地相互连接。相应的IGBT或其第二接触面此外借助于进一步设定路线的引线键合连接连接到具有不同电势的电势面。
在这样的开关器件中使用的本领域中的常规连接器件是所提及的引线键合连接(所述引线键合连接在这里也应理解为意指带状键合连接)以及基于膜堆并且例如从DE 102007 006 706 A1已知的现代连接器件。
本发明是基于以下目的:就已知的功率电子开关器件的载流能力及其对形成电流阀的半导体部件的均匀(homogeneous)负载而言来改进已知的功率电子开关器件。
发明内容
该目的根据本发明来实现。
根据本发明,功率电子开关器件形成有基板,该基板具有多个电势面,所述多个电势面具有分别分配给所述电势面中的至少一个的至少两个不同的电势,其中在由第一电势的至少一个电势面形成的第一导体轨道上,多个半导体部件以n×m矩阵在x-y方向上定向地布置,所述多个半导体部件相互并联连接并且形成电流阀。在这种情况下,“n”是至少一个,并且n个半导体部件在x方向上相互并排布置,而“m”大于1,并且m个半导体部件在y方向上相互并排布置。在这种情况下,半导体部件能够分布在第一电势的多个电势面之间,所述第一电势的多个电势面形成第一导体轨道。在x-y方向上的定向不应被理解为意指数学严格意义上的定向,而是包括某些位置公差的基本定向,而不脱离矩阵状布置的基本概念。
由第二电势的至少一个电势面形成的第二导体轨道在x方向上的两侧上与第一导体轨道并排布置。半导体部件通过它们的面向所述导体轨道的相应的第一负载接触面导电地连接到第一导体轨道,而在x方向上相互并排布置的n个半导体部件的第二负载接触面相互导电连接。另外,在x方向上相应的最外面的半导体部件导电连接到并排布置的第二电势的电势面(也就是第二导体轨道)。
在每种情况下,如果在功率半导体部件的第二负载接触面相互之间的导电连接借助于第一连接器件形成,并且在功率半导体部件的第二负载接触面和在x方向上与第一导体轨道横向地并排的所分配的电势面之间的相应的导电连接借助于第二连接器件形成,则是有利的。具体而言,原则上,第一和第二连接器件能够技术上相同地(identically)形成。
在这里,一个优选地变型是,如果第一或第二连接器件或两者连接器件形成为引线键合连接或如上所述的带状键合连接。
在这里,进一步优选的变型是,如果第一或第二连接器件或两者连接器件根据上述的现有技术形成为膜堆。
如果第二电势的电势面包含呈U形形式的第一导体轨道并且在这种情况下具有在x方向上与所述导体轨道横向地并排布置的区域,则可能是优选的。
如果第二电势的相应的两个电势面在x方向上与第一导体轨道横向地并排布置,并且其中所述第二电势面借助于第三连接器件相互导电连接,则是特别优选的。在这种情况下,所述第三连接器件能够横跨第一电势的一个或多个电势面。为了这个目的,第三连接器件能够形成为引线键合连接或膜堆。
此外,如果第一电势的多个电势面借助于第四连接器件相互导电地连接,则可能是优选的。为了这个目的,第四连接器件能够形成为引线键合连接或膜堆或焊桥。
在这里,如果功率电子开关器件的所有连接器件基本上相同地形成,特别地如果它们形成为膜堆,则是特别有利的。如果它们全部简化为单个膜堆,则是特别有利的。
就功率半导体部件的布置而言以及就具有第一或第二电势的电势面而言,如果所述开关器件相对于y方向上的第一对称轴线对称地形成,则根据本发明的功率电子开关器件的一个有利变型出现。此外,就功率半导体部件的布置而言以及就具有第一或第二电势的电势面而言,如果开关器件相对于在x方向上的第二对称轴线对称地形成,则是有利的。在这种情况下,具有辅助电势的第三电势的电势面的位置,诸如例如用于驱动可开关功率半导体部件的栅极电势(gate potential),原则上是无关紧要的。为了进一步有利的构造的目的,所述第三电势面能够被包括在对称构造中。
不言而喻,能够单独地或以本身不相互排他的任何组合实现本发明的不同的构造以便实现改进。具体而言,上文和下文所提及的以及所解释的特征不仅能够以所指示的组合使用,而且在不脱离本发明的范围的情况下,也能够以其它组合或独自地使用。
附图说明
本发明的进一步的解释、有利的细节和特征将从根据如图1至图7中所示的本发明或其部分的功率电子开关器件的示例性实施例的以下描述变得明显。
图1示出根据本发明的包括以1×3矩阵布置的半导体部件的功率电子电路的第一构造。
图2示出根据本发明的包括以3×3矩阵布置的半导体部件的功率电子电路的第二构造。
图3示出根据本发明的包括以1×3矩阵布置的半导体部件的功率电子电路的第三构造。
图4示出根据本发明的包括以3×3矩阵布置的半导体部件的功率电子电路的第四构造。
图5示出根据本发明的包括以3×3矩阵布置的半导体部件的功率电子电路的第五构造。
图6以剖面图示出包括连接器件的第一构造的功率电子电路的第五构造。
图7以剖面图示出包括连接器件的第二构造的功率电子电路的第五构造。
具体实施方式
在图1至图5中的图示示出x-y平面中的相应的开关器件的平面图,而图6和图7示出x-z平面中的剖面图。
图1示出根据本发明的包括以1×3矩阵布置的半导体部件50的功率电子开关器件的第一构造。图示示出三个并联连接的半导体部件50,在此形成为具有集成续流二极管(integrated freewheeling diode)的功率晶体管,该集成续流二极管通过它们的第一后侧负载接触面500(参见图6)布置在第一电势的电势面20上并且导电地连接到电势面20。这种连接在本领域中以常规方式实现,也就是说,例如借助于焊料连接或烧结连接来实现。所述第一电势面20在此对应于开关器件的第一导体轨道。
此外,所述第一导体轨道具有用于外部电连接的接触面200。所述接触面200能够例如对应于功率半导体模块中的AC电压负载端子,而不限制普遍性。
此外,该图示示出了第二电势的电势面30,该第二电势的电势面30以U形形式包围第一电势的电势面并且从而包围第一导体轨道,并且形成第二导体轨道。所述电势面30同样具有用于外部电连接的接触面300。所述接触面300例如对应于示例性功率半导体模块中的负极性的DC电压负载端子。
为了驱动功率晶体管50,开关器件此外包括第三电势的两个电势面40、400。这些电势面中的第一电势面40借助于可开关功率半导体部件50的栅极接触面的引线键合连接(wire bond connection)42用作直接连接,而第二电势面400例如借助于本领域中的常规接触弹簧用作外部连接。这里,并且在下文中,相应的栅极接触面与第三电势的所分配的电势面的连接在本领域中是常规的,也就是说,借助于所述引线键合连接42或借助于膜堆(film stack),更准确地说借助于所述膜堆的单独的部分。
所述电势面20、30、40或由此形成的导体轨道以本领域中的常规方式布置在绝缘基板10上。
根据本发明,所有功率半导体部件50的第二负载接触面502在每种情况下在x方向上借助于第二连接器件602、604导电连接到第二电势的电势面30、或第二导体轨道的区域,第二导体轨道在x方向上与第一导体轨道横向地并排布置。在这里,以及在随后的图2至图5中,第二连接器件602、604被图示为引线键合连接,在每种情况下而不限制普遍性,参见图6和图7。
图2示出根据本发明的包括以3×3矩阵布置的半导体部件50的功率电子电路的第二构造。原则上,该开关器件与根据图1的开关器件类似地形成。
与图1对比,在这里,在第一电势的电势面20上,也就是说,在第一导体轨道上,2乘3个IGBT 50在每种情况下在y方向上布置,其中续流二极管52在每种情况下在x方向上布置在相邻的IGBT 50之间。第三电势(也就是,栅极电势)的电势面40位于第一电势的电势面20的切口(cut-out)区域中,其中第三电势的所述电势面40中的一个具有接触面400,借助于本领域中的常规接触弹簧用于外部连接。
根据本发明,在x方向上相互并排布置的所有功率半导体部件50、52的第二负载接触面502借助于第一连接器件600相互导电地串联连接。同样地,根据本发明,最外面的功率半导体部件50的第二负载接触面502在每种情况下在x方向上借助于第二连接器件602、604导电地连接到在两侧上并排布置的第二电势的电势面30,也就是说,连接到第二导体轨道,第二导体轨道以U形形式包围第一导体轨道。
图3示出根据本发明的包括以1×3矩阵布置的半导体部件50的功率电子电路的第三构造。原则上,该开关器件也与根据图1的开关器件类似地形成。
与图1对比,在这里,在第一电势的电势面20上,也就是,在第一导体轨道上,三个MOS-FET 50在y方向上布置。第三电势(再一次,栅极电势)的两个窄电势面40与所述导体轨道并排布置。在第一导体轨道的每侧上,第二电势的相应的电势面30、32在每种情况下在x方向上进一步横向地布置。所述电势面借助于第三连接手段36(在这里,引线键合连接,而不限制普遍性)被连接以形成公共的第二导体轨道。
用于外部电连接的接触面200、300布置在位于y方向上的、第一和第二电势的每个电势面20、30、32的端部处。
整个构造相对于第一对称轴线B对称地形成,第一对称轴线B在y方向上在中心处延续通过第一电势的电势面20。在该构造中,就为了所提及的要求的该对称性而言,即,就功率半导体部件50和具有第一电势和第二电势的电势面20、30、32的布置而言,第三电势的电势面40的布置以及第一和第二电势的电势面20、30、32的接触面200、300的布置被包括在该对称性内。此外,在这里就第一和第二连接器件600、602、604的布置和构造而言存在对称性。
另外,该构造相对于第二对称轴线C是对称的,第二对称轴线C垂直于第一对称轴线并且因此在x方向上延续。在这种情况下,所述第二对称轴线C与中央功率半导体部件相交。
图4示出根据本发明的包括以3×3矩阵布置的半导体部件的功率电子电路的第四构造。该开关器件将图2的必要的特征与图3的特征相结合。
在这里,电流阀依次借助于六个功率晶体管50(具体地,IGBT)和三个反并联连接的续流二极管52形成。IGBT 50布置在第一列和第三列中,并且二极管52布置在第二列中,第二列布置在第一列与第三列之间。所有这些功率半导体部件50、52都布置在第一电势的电势面20上,电势面20具有针对第三电势(栅极电势)的电势面40的切口,并且形成第一导体轨道。此外,第一电势的电势面20具有进一步的切口,第二电势的进一步的电势面34布置在所述进一步的切口中。所述进一步的电势面34补充位于与第一电势的电势面20横向并排的第二电势的两个电势面30、32两者以形成第二导体轨道。
为了这个目的,第二电势的左侧电势面30借助于第三连接器件606导电地连接到附加电势面34。同样地,第二电势的右侧电势面32连接到第二电势的附加电势面34。
该构造也相对于第一对称轴线对称地形成,第一对称轴线在y方向上在中心处延续通过第一电势的电势面20。该对称性对于功率半导体部件50、52的布置、第一和第二连接器件600、602、604的形成以及具有第一和第二电势的电势面20、30、32、34的布置是必要的,并且受限于功率半导体部件50、52的布置、第一连接器件和第二连接器件600、602、604的形成以及具有第一电势和第二电势的电势面20、30、32、34的布置。这样的对称性最终导致在电势面20、30、32、34内的均匀的电流分布并且因此最终导致形成电流阀的所有功率半导体部件50、52的均匀负载,并且因此导致在操作期间功率电子开关器件的半导体区域和负载能力的优秀(outstanding)比率。
图5示出根据本发明的包括以3×3矩阵布置的半导体部件的功率电子电路的第五构造。基本构造与根据图4的构造相同。
然而,在这里,第一导体轨道由第一电势的三个电势面20、22、24形成,三个电势面20、22、24借助于第四连接器件608相互导电连接,第四连接器件608基本上以本领域中的常规方式形成。在第一电势的所述电势面20、22、24中的每一个上,也就是说,在第一导体轨道上,布置有三个MOS-FET 50,也就是说布置有总共九个功率半导体部件。布置在这些电势面之间并且通过第四连接器件608桥接的是第三电势(再一次,栅极电势)的两个电势面40。也像在先前附图中那样,这些在这里借助于引线键合连接或借助于膜堆以本领域中的常规方式导电地连接到可开关功率半导体部件50的(也就是IGBT的或MOS-FET的)栅极接触面。
在这里用于第一导体轨道的外部电连接的接触面200布置在第一电势的中央电势面22上。
此外,该图示示出了第二电势的两个电势面30、32,两个电势面30、32相对于第一导体轨道在x方向上横向地布置并且借助于第三连接器件606相互导电地连接。
第一和第二连接器件600、602、604根据本发明以如例如关于图2所描述的方式形成。
图6和图7示出根据图5的在沿着剖面线A-A的剖面中穿过功率电子开关器件的构造的剖面。
图6以剖面图示出包括连接器件的第一构造的功率电子电路的第五构造。
该图示示出作为功率电子开关器件的基板的绝缘体主体10。导体轨道布置在所述基板10上。在这种情况下,第一导体轨道由第一电势的三个电势面20、22、24形成—参见图5并且在这里未示出的是—所述三个电势面20、22、24相互导电地连接。相应的功率半导体部件50在每种情况下被图示为在所述电势面20、22,24上,所述功率半导体部件通过其第一负载接触面500导电地连接到第一电势的所分配的电势面20、22、24。
此外,该图示示出第二电势的两个电势面30、32,所述两个电势面30、32在x方向上的两侧上与第一导体轨道横向地并排布置。为了完整性起见,还示出第三电势的电势面40。
功率半导体部件50的第二负载接触面502,布置在功率半导体部件50的主面(位于与电势面20、22、24相反)上,借助于第一连接器件600(在这里,形成为引线键合连接)相互导电地连接。相应的最外面的功率半导体部件50借助于第二连接器件602、604(在这里,同样形成为引线键合连接)导电地连接到在x方向上横向相邻的、第二电势的相应地所分配的电势面30、32。在这里,以特别优选方式,第一和第二连接器件600、602、604简化成集成引线键合连接,也就是说由多个各自的连续引线构成的引线键合连接,示出了其中的一个连续引线,所述引线键合连接从第二电势的左电势面30经由第二负载接触面502延伸远到第二电势的右电势面32。
图7以剖面图示出包括第一和第二连接器件610、612、614的第二构造的功率电子电路的第五构造。基板10、电势面20、22、24、30、32、40以及还有功率半导体部件50与根据图6的那些相同。此外,作为典型应用的示例,该图示示出热沉16以及热沉16与功率电子开关器件之间的导热连接层14。
在功率电子开关器件的构造上,与图6不同的是第一和第二连接器件的构造,第一和第二连接器件在这里简化成本领域中的常规膜堆61,所述膜堆包括两个所述连接器件。
所述膜堆61在这里由两个固有结构化的金属膜与布置在它们之间的电绝缘膜构成。背向功率半导体部件50的第二金属膜凭借以下事实形成第一连接器件610:在功率半导体部件50的第二负载接触面502的上方布置有贯穿绝缘膜的镀覆通孔,所述通孔在这些位置处将第二金属膜连接到面向功率半导体部件50的第一金属膜。第一金属膜以本领域中的常规方式借助于焊料连接、粘合剂连接或烧结连接导电地连接到功率半导体部件50的第二接触面502。
相应的第二连接器件612、614由相应的第一金属膜形成,第一金属膜在x方向上从相应的最外面的功率半导体部件50(也就是说,左功率半导体部件或右功率半导体部件)相应地延伸到在x方向上横向地相邻的第二电势的所分配的电势面30、32。第一金属膜借助于焊料连接、粘合剂连接、或烧结连接导电连接到该相应的电势面30、32。
为了内绝缘,本领域中的常规罐注混合物12能够布置在连接器件和基板和/或电势面之间。一般而言,在连接器件(上述第一和第二连接器件以及第三和第四连接器件两者)的构造的情况下,所述罐注混合物也作为引线键合连接但是因此以覆盖后者的方式被提供。
Claims (13)
1.一种功率电子开关器件,包括基板(10),所述基板(10)具有多个电势面(20、22、24,30、32、34),所述基板(10)具有分别分配给所述电势面中的至少一个的至少两个不同的电势,
其中在由第一电势的至少一个电势面(20、22、24)形成的第一导体轨道上,多个半导体部件(50、52)以n×m矩阵在x-y方向上定向地布置,所述多个半导体部件(50、52)相互并联连接并且形成电流阀,并且
其中由第二电势的至少一个电势面(30、32、34)形成的第二导体轨道在x方向上的两侧上与所述第一导体轨道并排布置,
其中所述半导体部件(50、52)通过它们的面向所述导体轨道的相应的第一负载接触面(500)导电地连接到所述第一导体轨道,并且其中在所述x方向上相互并排布置的所述n个半导体部件(50、52)的第二负载接触面(502)相互导电连接,并且
其中在所述x方向上相应的最外面的所述半导体部件50导电地连接到并排布置的所述第二电势的电势面(30、32)。
2.根据权利要求1所述的功率电子开关器件,其中,在所述功率半导体部件(50、52)的所述第二负载接触面(502)之间相互的导电连接借助于第一连接器件600、610形成,并且在所述功率半导体部件(50、52)的所述第二负载接触面(502)与所述第二电势的所分配的电势面(30、32)之间的相应的导电连接借助于第二连接器件(602、604、612、614)形成。
3.根据权利要求2所述的功率电子开关器件,其中,所述第一和第二连接器件原则上在技术上相同地形成。
4.根据权利要求2或3所述的功率电子开关器件,其中,所述第一或第二连接器件或两者连接器件(600、602、604)形成为引线键合连接。
5.根据权利要求2或3所述的功率电子开关器件,其中,所述第一或第二连接器件或两者连接器件(610、612、614)形成为膜堆(61)。
6.根据权利要求1至3中的任一项所述的功率电子开关器件,其中,所述第二电势的电势面30以U形形式包围所述第一导体轨道,并且在这种情况下具有在所述x方向上与所述导体轨道横向地并排布置的区域。
7.根据权利要求1至3中的任一项所述的功率电子开关器件,其中,第二电势的相应的两个电势面(20、22)在所述x方向上与所述第一导体轨道横向地并排布置,并且其中所述第二电势面(20、24)借助于第三连接器件(606)相互导电地连接。
8.根据权利要求7所述的功率电子开关器件,其中,所述第三连接器件(606)被形成为引线键合连接或膜堆。
9.根据权利要求1至3中的任一项所述的功率电子开关器件,其中,第一电势的多个电势面(20、22、24)借助于第四连接器件(608)相互导电地连接。
10.根据权利要求9所述的功率电子开关器件,其中,所述第四连接器件(608)形成为引线键合连接或膜堆。
11.根据权利要求1至3中的任一项所述的功率电子开关器件,其中,关于所述功率半导体部件(50、52)的布置以及关于具有第一电势或第二电势的所述电势面(20、22、24、30、32、34),所述开关器件相对于在y方向上的第一对称轴线(B)对称地形成。
12.根据权利要求11所述的功率电子开关器件,其中,关于所述功率半导体部件(50、52)的布置以及关于具有第一电势或第二电势的所述电势面(20、22、24,30、32、34),所述开关器件相对于在所述x方向上的第二对称轴线(C)对称地形成。
13.根据权利要求11所述的功率电子开关器件,其中,对称与所述第一和第二连接器件(600、602、604、610、612、614)的布置和构造有关地形成。
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EP3644360A4 (en) * | 2017-06-19 | 2020-04-29 | Shindengen Electric Manufacturing Co., Ltd. | SEMICONDUCTOR COMPONENT |
DE102019112477B4 (de) * | 2019-05-13 | 2024-03-14 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit einer Kontakteinrichtung |
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