CN106957172A - 一种高介高频电子陶瓷介质材料及制备方法 - Google Patents
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Abstract
本发明公开了一种高介高频电子陶瓷介质材料及制备方法,该组别电子陶瓷介质材料具有特定的介电常数,适合于制作大容量高频陶瓷电容器、大功率陶瓷电容器、超高压陶瓷电容器等,主要由二氧化钛、钛酸锶、氧化锆、氧化锌、碳酸锂、粘土、氧化钐、五氧化二钒按照一定比例,采用科学的生产工艺制成。通过检测和用户使用证明,其介质常数、介质损耗、抗电强度、绝缘电阻等性能指标均明显优于现有技术。
Description
技术领域
本发明属于电子新材料技术领域,尤其涉及一种高介高频电子陶瓷介质材料及制备方法。
背景技术
电子陶瓷介质材料主要用来制作陶瓷电容器,其中的UJ组别高频瓷料主要用于制作大容量高频陶瓷电容器、大功率陶瓷电容器、超高压陶瓷电容器等,主要用于制备高电容电容器、多层基片、各种传感器等。随着电子科学的不断发展,对介电陶瓷性能要求是越来越高,钛酸锶陶瓷是一种新的多功能电子陶瓷材料,它具有介电损耗低、温度稳定性好等优点。有研究表明: 钛酸锶的四角相态点的相转移温度为 108 K,纯 SrTiO3的居里温度是35K甚至更低。SrTiO3不仅具有高的电容率和低的耗散因子,而且具有良好的温度稳定性和抗高电压性。可用于制造高电压和高电容率的陶瓷电容器。钛酸锶粉体的制备方法也是研究的热点,现已开发出许多化学液相粉体制备方法,如溶胶-凝胶法、共沉淀法、水热合成法等。国内已有厂家生产该瓷料,但有介电常数小、耐压不高、损耗大、性能不稳定等缺点,不能用于制作大容量的高频高压电容及要求较严的场合。
发明内容
本发明的目的是提供一种高介高频电子陶瓷介质材料及制备方法。
本发明的目的是通过以下技术方案实现的,该高介高频电子陶瓷介质材料由以下材料制成:二氧化钛(TiO2)80~90%,钛酸锶(SrTiO3) 4~10%,氧化锆(ZrO2) 2~8%,氧化锌(ZnO) 0.2~1%,碳酸锂(Li2CO3)0.2~1%,粘土0.2~1%,氧化钐(Sm2O3) 0.1~0.6%,五氧化二钒(V2O5) 0.1~0.6%。
优选的,该高介高频电子陶瓷介质材料由以下材料制成:二氧化钛(TiO2)85%,钛酸锶(SrTiO3) 7%,氧化锆(ZrO2) 5%,氧化锌(ZnO) 0.6%,碳酸锂(Li2CO3) 0.6%,粘0.6%,氧化钐(Sm2O3)0.3%,五氧化二钒(V2O5) 03%.
其制备工艺为:该发明原材料购入后,经过检验合格后进行二氧化钛(TiO2)、钛酸锶(SrTiO3)、氧化锆(ZrO2)基料的配料,经过球磨、压滤、干燥、煅烧、粉碎、除铁等工艺,得到基料待用;然后即可进行成品料配料,再经过球磨、搅拌磨、混料、喷雾造粒、除铁、混料即得成品料,检验合格后包装入库,等待发货。
该发明为TiO2基瓷料,通过SrTiO3置换作用,将TiO2的居里温度移至10℃附近,从而大大提高了使用温度范围内的介电常数;添加ZnO、Li2CO3、粘土、Sm2O3、V2O5促进烧结,降低烧结温度,达到瓷体细晶化,从而提高了耐压、降低了损耗。
众所周知,在上述原料中,起置换作用的SrTiO3的性能直接影响到所生产出的电子陶瓷介质材料的性能。为此,对SrTiO3的制备进行了改进。将 TiCl4 慢慢滴入冷水中,然后边搅拌边加入 KOH 溶液,形成凝胶A。将凝胶A过滤,并分别用热水(80℃)和冷水(20℃)洗涤,至滤液加 AgNO3无白色沉淀,得到凝胶B和C。将凝胶A 放入80℃水浴中,分别恒温搅拌 2 、4 h,得到凝胶D 、E 。将制备好的TiO2·nH2O 凝胶放入反应釜中,加入KOH溶液SrCl2·6H2O(或 Sr(NO3)2、 S r(OH)2·8H2O)溶液,并加水至210 mL ,使液相中Ti与Sr的浓度均为0 .25 mol/L,KOH 浓度为0 .5 mol/L,搅拌均匀后,密封反应釜,加温至80℃,恒温2h,停止加热,自来水冷却。产物经过滤、洗涤至滤液加AgNO3无白色沉淀,滤饼于80℃下干燥。
分别以热处理2、4 h的 TiO2·nH2O 凝胶D、E作为钛源,以 SrCl2·6H2O作为锶源进行水热反应,并与不进行热处理的实验进行比较。从TiO2·nH2O 凝胶的XRD 结果来看,没进行热处理的 TiO2·nH2O 凝胶为非晶质;经热处理后 TiO2·nH2O 凝胶发生晶化,存在锐钛矿相,而且热处理时间越长,锐钛矿相衍射峰越强。TEM 结果表明,没进行热处理的TiO2·nH2O 呈网枝状,热处理后,出现结晶颗粒,采用TEM 暗场像,测得结晶粒度均为6nm,只是热处理时间越长,结晶颗粒越多。产物的XRD结果表明,三种产物的物相均为较纯的SrTiO3相。与前驱物相对应,产物的粒度和形貌发生了相应的变化。没有热处理的产物颗粒为规则的立方形,热处理后的产物颗粒形状不太规则,多为六变形或球形。颗粒度随着热处理时间的延长而减小,没有热处理的 SrTiO3颗粒平均粒度为116 nm,热处理2 h的SrTiO3平均粒度为54 nm ,热处理4h的SrTiO3平均粒度为32 nm。热处理对产物的粒度分布也有很大影响,热处理时间越长,产物粒度越均匀,粒度分布越窄。
通过检测和用户使用证明,本发明和现有技术性能指标对比如下:
性能指标 | 本发明 | 现有技术 |
介电常数 | 130±10 | 90±10 |
介质损耗 | ≤0.02% | ≤0.05% |
抗电强度 | ≥12KV/mm | ≥8KV/mm |
绝缘电阻 | ≥104MΩ | ≥104MΩ |
温度特性 | UJ | UJ |
具体实施方式
表1给出了构成本发明的各式样的成分配比的几个具体实例。
表2给出了各配方式样的介电性能。当然这些实施例并不是为了限制本发明的范围。
表1 各试样的成分配比
表2 各配方试样的介电性能
Claims (4)
1.一种高介高频电子陶瓷介质材料,其特征在于该高介高频电子陶瓷介质材料由以下材料制成:二氧化钛(TiO2)80~90%,钛酸锶(SrTiO3) 4~10%,氧化锆(ZrO2) 2~8%,氧化锌(ZnO) 0.2~1%,碳酸锂(Li2CO3)0.2~1%,粘土0.2~1%,氧化钐(Sm2O3) 0.1~0.6%,五氧化二钒(V2O5) 0.1~0.6%。
2.如权利要求1所述的一种高介高频电子陶瓷介质材料,其特征在于该高介高频电子陶瓷介质材料由以下材料制成:二氧化钛(TiO2)85%,钛酸锶(SrTiO3) 7%,氧化锆(ZrO2)5%,氧化锌(ZnO) 0.6%,碳酸锂(Li2CO3) 0.6%,粘0.6%,氧化钐(Sm2O3)0.3%,五氧化二钒(V2O5) 03%。
3.一种高介高频电子陶瓷介质材料的制备方法,其特征在于该发明原材料购入后,经过检验合格后进行二氧化钛(TiO2)、钛酸锶(SrTiO3)、氧化锆(ZrO2)基料的配料,经过球磨、压滤、干燥、煅烧、粉碎、除铁等工艺,得到基料待用;然后即可进行成品料配料,再经过球磨、搅拌磨、混料、喷雾造粒、除铁、混料即得成品料,检验合格后包装入库。
4.根据权利要求3所述的一种高介高频电子陶瓷介质材料的制备方法,其特征在于TiO2基瓷料通过SrTiO3置换作用,将TiO2的居里温度移至10℃附近。
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