CN106886131B - 曝光装置、曝光方法以及物品的制造方法 - Google Patents
曝光装置、曝光方法以及物品的制造方法 Download PDFInfo
- Publication number
- CN106886131B CN106886131B CN201611142628.0A CN201611142628A CN106886131B CN 106886131 B CN106886131 B CN 106886131B CN 201611142628 A CN201611142628 A CN 201611142628A CN 106886131 B CN106886131 B CN 106886131B
- Authority
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- Prior art keywords
- wavelength
- optical system
- phase shifting
- changing unit
- shifting mask
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 106
- 238000005286 illumination Methods 0.000 claims abstract description 77
- 230000008859 change Effects 0.000 claims abstract description 71
- 230000004075 alteration Effects 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000008569 process Effects 0.000 claims description 28
- 238000001228 spectrum Methods 0.000 claims description 5
- 230000005499 meniscus Effects 0.000 claims description 2
- 230000002829 reductive effect Effects 0.000 claims 1
- 230000010363 phase shift Effects 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015245648A JP6674250B2 (ja) | 2015-12-16 | 2015-12-16 | 露光装置、露光方法、および物品の製造方法 |
| JP2015-245648 | 2015-12-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106886131A CN106886131A (zh) | 2017-06-23 |
| CN106886131B true CN106886131B (zh) | 2019-05-14 |
Family
ID=59079685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611142628.0A Active CN106886131B (zh) | 2015-12-16 | 2016-12-13 | 曝光装置、曝光方法以及物品的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6674250B2 (https=) |
| KR (1) | KR102130481B1 (https=) |
| CN (1) | CN106886131B (https=) |
| TW (1) | TWI656410B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109240044B (zh) * | 2018-10-10 | 2020-09-18 | 德淮半导体有限公司 | 曝光系统及减小曝光过程中掩膜板三维效应的方法 |
| WO2020078844A1 (en) * | 2018-10-19 | 2020-04-23 | Asml Netherlands B.V. | Method to create the ideal source spectra with source and mask optimization |
| JP7390804B2 (ja) * | 2019-05-17 | 2023-12-04 | キヤノン株式会社 | 露光装置、露光方法、決定方法および物品製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101453A (zh) * | 2006-06-23 | 2008-01-09 | Asml荷兰有限公司 | 用于减小波前像差的方法和计算机程序产品 |
| CN101109907A (zh) * | 2007-08-22 | 2008-01-23 | 中国科学院上海光学精密机械研究所 | 光刻机投影物镜彗差原位检测系统及检测方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2723405B2 (ja) * | 1991-11-12 | 1998-03-09 | 松下電器産業株式会社 | 微細電極の形成方法 |
| JP3259347B2 (ja) * | 1992-09-11 | 2002-02-25 | 株式会社ニコン | 投影露光方法及び装置、並びに半導体素子の製造方法 |
| JPH07220988A (ja) * | 1994-01-27 | 1995-08-18 | Canon Inc | 投影露光方法及び装置及びこれを用いたデバイス製造方法 |
| JPH1022198A (ja) * | 1996-07-04 | 1998-01-23 | Hitachi Ltd | 露光方法および光露光装置 |
| JP3080024B2 (ja) * | 1997-02-20 | 2000-08-21 | 日本電気株式会社 | 露光方法および球面収差量の測定方法 |
| US6096457A (en) * | 1998-02-27 | 2000-08-01 | Micron Technology, Inc. | Method for optimizing printing of a phase shift mask having a phase shift error |
| JP4436029B2 (ja) * | 2001-02-13 | 2010-03-24 | 株式会社ニコン | 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム |
| JP2002329651A (ja) * | 2001-04-27 | 2002-11-15 | Nikon Corp | 露光装置、露光装置の製造方法、及びマイクロデバイスの製造方法 |
| JP2004205874A (ja) * | 2002-12-26 | 2004-07-22 | Matsushita Electric Ind Co Ltd | マスクおよび半導体装置の製造方法 |
| WO2004107417A1 (ja) * | 2003-05-28 | 2004-12-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| JP2006080454A (ja) * | 2004-09-13 | 2006-03-23 | Renesas Technology Corp | パターン形成方法 |
| JP5201979B2 (ja) * | 2007-12-26 | 2013-06-05 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
| KR20100135215A (ko) * | 2008-04-30 | 2010-12-24 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법과, 디바이스 제조 방법 |
| KR101898921B1 (ko) * | 2011-11-16 | 2018-09-17 | 삼성디스플레이 주식회사 | 노광 시스템 이를 이용한 패턴 형성 방법 및 표시 기판의 제조 방법 |
| JP2014135368A (ja) * | 2013-01-09 | 2014-07-24 | Canon Inc | 露光装置、計測方法及びデバイスの製造方法 |
-
2015
- 2015-12-16 JP JP2015245648A patent/JP6674250B2/ja not_active Expired - Fee Related
-
2016
- 2016-10-13 TW TW105133072A patent/TWI656410B/zh active
- 2016-12-07 KR KR1020160165530A patent/KR102130481B1/ko active Active
- 2016-12-13 CN CN201611142628.0A patent/CN106886131B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101453A (zh) * | 2006-06-23 | 2008-01-09 | Asml荷兰有限公司 | 用于减小波前像差的方法和计算机程序产品 |
| CN101109907A (zh) * | 2007-08-22 | 2008-01-23 | 中国科学院上海光学精密机械研究所 | 光刻机投影物镜彗差原位检测系统及检测方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170072128A (ko) | 2017-06-26 |
| TW201732441A (zh) | 2017-09-16 |
| TWI656410B (zh) | 2019-04-11 |
| CN106886131A (zh) | 2017-06-23 |
| JP6674250B2 (ja) | 2020-04-01 |
| JP2017111311A (ja) | 2017-06-22 |
| KR102130481B1 (ko) | 2020-07-06 |
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