CN106816463B - 一种终端结构、半导体器件及其制备方法 - Google Patents
一种终端结构、半导体器件及其制备方法 Download PDFInfo
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- CN106816463B CN106816463B CN201710029590.4A CN201710029590A CN106816463B CN 106816463 B CN106816463 B CN 106816463B CN 201710029590 A CN201710029590 A CN 201710029590A CN 106816463 B CN106816463 B CN 106816463B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000005468 ion implantation Methods 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
Abstract
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Claims (6)
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CN201710029590.4A CN106816463B (zh) | 2017-01-16 | 2017-01-16 | 一种终端结构、半导体器件及其制备方法 |
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CN201710029590.4A CN106816463B (zh) | 2017-01-16 | 2017-01-16 | 一种终端结构、半导体器件及其制备方法 |
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CN106816463A CN106816463A (zh) | 2017-06-09 |
CN106816463B true CN106816463B (zh) | 2023-02-03 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108054206A (zh) * | 2017-10-24 | 2018-05-18 | 全球能源互联网研究院 | 一种横向元胞结构的功率器件终端结构及其制作方法 |
CN112133742A (zh) * | 2020-10-29 | 2020-12-25 | 西安众力为半导体科技有限公司 | 一种igbt器件背面保护环结构 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0111804A1 (en) * | 1982-12-13 | 1984-06-27 | General Electric Company | Bidirectional insulated-gate rectifier structures and method of operation |
JP2005183891A (ja) * | 2003-12-19 | 2005-07-07 | Success International Kk | 双方向ブロック型プレーナデバイスの構造と製法 |
EP2317553A1 (en) * | 2009-10-28 | 2011-05-04 | STMicroelectronics S.r.l. | Double-sided semiconductor structure and method for manufacturing the same |
CN104051547A (zh) * | 2014-06-18 | 2014-09-17 | 润奥电子(扬州)制造有限公司 | 一种高压快速软恢复二极管及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5967065B2 (ja) * | 2013-12-17 | 2016-08-10 | トヨタ自動車株式会社 | 半導体装置 |
US9337262B2 (en) * | 2014-01-16 | 2016-05-10 | Ideal Power Inc. | Structures and methods with reduced sensitivity to surface charge |
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2017
- 2017-01-16 CN CN201710029590.4A patent/CN106816463B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0111804A1 (en) * | 1982-12-13 | 1984-06-27 | General Electric Company | Bidirectional insulated-gate rectifier structures and method of operation |
JP2005183891A (ja) * | 2003-12-19 | 2005-07-07 | Success International Kk | 双方向ブロック型プレーナデバイスの構造と製法 |
EP2317553A1 (en) * | 2009-10-28 | 2011-05-04 | STMicroelectronics S.r.l. | Double-sided semiconductor structure and method for manufacturing the same |
CN104051547A (zh) * | 2014-06-18 | 2014-09-17 | 润奥电子(扬州)制造有限公司 | 一种高压快速软恢复二极管及其制备方法 |
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Address after: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Applicant after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Applicant after: State Grid Corporation of China Address before: 102209 Beijing Changping District future science and Technology North District Smart Grid Research Institute Applicant before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Applicant before: State Grid Corporation of China |
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Effective date of registration: 20180503 Address after: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Applicant after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Address before: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Applicant before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Applicant before: State Grid Corporation of China |
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