CN106716614A - 一种特别用于热接合微机电部件的装置 - Google Patents

一种特别用于热接合微机电部件的装置 Download PDF

Info

Publication number
CN106716614A
CN106716614A CN201580053334.8A CN201580053334A CN106716614A CN 106716614 A CN106716614 A CN 106716614A CN 201580053334 A CN201580053334 A CN 201580053334A CN 106716614 A CN106716614 A CN 106716614A
Authority
CN
China
Prior art keywords
film
joined
pressure
pressing plate
supporting plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580053334.8A
Other languages
English (en)
Inventor
V·兰格洛夫
S·科瓦尔斯基
W·波尔特
R·科赫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atv Technology Ltd
Original Assignee
Atv Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atv Technology Ltd filed Critical Atv Technology Ltd
Publication of CN106716614A publication Critical patent/CN106716614A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/04—Heating appliances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101—Chamber
    • H01L2224/75102—Vacuum chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75283—Means for applying energy, e.g. heating means by infrared heating, e.g. infrared heating lamp
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75315—Elastomer inlay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7555—Mechanical means, e.g. for planarising, pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83054—Composition of the atmosphere
    • H01L2224/83065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83209—Compression bonding applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/8323—Polychromatic or infrared lamp heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/83825—Solid-liquid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95053—Bonding environment
    • H01L2224/95091—Under pressure
    • H01L2224/95093—Transient conditions, e.g. assisted by a gas flow or a liquid flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Die Bonding (AREA)

Abstract

本发明涉及一种特别用于在处理腔(8)中热接合微机电部件(2、3)的装置，包括用于支撑至少一个所述待接合部件(2、3)的底部支撑板(11)，以及用于将压力施加至所述待接合部件(2、3)的相对于至少一个第一部件(2)的至少一个第二部件(3)上的压紧装置(15)。压紧装置(15)设置有可膨胀膜(19)，所述可膨胀膜(19)设置为与所述至少一个第二部件(3)接触。流体压力，特别是气压，能够在其背离所述待接合部件(2、3)的一侧施加至所述膜(19)上。

Description

一种特别用于热接合微机电部件的装置
技术领域
本发明涉及一种特别用于热接合微机电部件的装置，包括一种用于将待接合的部件彼此挤压的压紧装置。
背景技术
在半导体技术中，可以使用不同的方法将微机电部件，例如，如芯片或管芯，分别地，晶片，LED等，或由其组成的部件，连接到载体。
在该连接中，功率模块的安装技术必须满足关于开关速度，传导损耗，开关损耗以及温度电阻的日益增长的需求，不仅因为分别由硅或经常使用的半导体材料碳化硅(SiC)和氮化镓(GaN)制成的半导体的持续进一步发展，还因为新的应用领域和复杂的形貌。
功率半导体通常应用在具有结构化铜或铝的载体基板上。该基板可以是IMS(绝缘金属基板)，或使用具有氧化铝或氮化铝的内陶瓷层的基板，其被称为DCB(直接铜键)，DAB(直接铝键)或AMB(有源金属钎焊)基板。在这些情况下，通常通过焊接来形成平面芯片连接。
对于高抗压连接，使用更近期的接合技术，诸如Ag烧结或扩散焊接，也称为TLPB(瞬态液相接合)或TLPS(瞬态液相焊接)。
所有这些已知的接合方法都需要在待接合的部件上施加压力，其压力必须在接合操作期间保持一段预定的时间，这取决于过程，例如在30MPa，Ag烧结中几秒钟。
在实践中已知的装备中，其通常包括具有作为待接合部件支撑件的加热板和可垂直移动的压力机或焊接头的真空室，通过焊接头使用平面压板施加压力。用于实际目的，为了能够实现不同芯片高度的大致均匀接触，硅胶垫分别使用在焊接头或压板上，以便在接合期间将操作压力施加在半导体结构上。
不利的是，即使相对软的硅胶垫也不能保证高度不同的部件上压力均匀分布。只有最高或较高的芯片，相对地，能够被相应地挤压，而较低的芯片不能经受所需的接触压力。这同样适用于不均匀的芯片，其被充分挤压在部分区域。因此，即使使用带硅胶垫的压板，对于高-电阻连接而言，接合质量也是有问题的。
对于不同高度的半导体部件的高-电阻连接，可以选择单芯片连接，然而，这会导致长的总处理时间以及相应地高成本。
本发明公开的技术问题
因此，本发明的一个目的是提供一种特别用于热接合微机电部件的装置，其中即使用于相对于部件具有不同的接近距离的压紧装置，也可以确保将压紧装置的均匀压力施加到待接合的部件上，这样确保了可重复的，高接合质量，即使同时用于多个不同的待接合部件。
技术方案
通过一种特别用于热接合微机电部件的装置实现上述目的，所述装置包括处理腔，该处理腔具有用于接收待接合部件的至少一个第一部件的较低的支撑板和用于沿至少一个第一部件的方向向待接合部件的至少一个第二部件施加压力的压紧装置。根据本发明，压紧装置形成有设置用于接触至少一个第二部件的可膨胀膜，其中，可以在其背离待接合部件的侧面将流体压力，特别是气压，施加到所述膜上。
有益效果
本发明装置的优点是允许几个形貌和高度不同的待接合微机电部件同时以高接合质量接合至载体。通过可膨胀膜施加至部件，尤其是芯片上的压力对所有待压制的芯片来说都是一样的，因为膜适用于目标表面，即，适用于待压制的部件的形貌，由于膜的膨胀是根据流体压力的，从而使压紧装置的流体压力均匀作用在所有芯片上。
有利的是，不同形状的半导体部件的等静压还允许在接合步骤中使用通过热压接来产生高压力连接的接合方法来处理多个这样的半导体部件，例如根据TLPB(瞬时液相键合)工艺或TLPS(瞬时液相焊接)工艺的Ag烧结或平面扩散焊接。
由于该膜允许多个不同的半导体部件通过等静压(isostatic pressing)同时接合，所述部件能够被准确定位至他们的最终位置，相对于单芯片方法，例如，还可以有利地在密封大气中，特别是不含氧气，具有高纯度的大气下进行处理。
具有可通过流体压力膨胀的膜的压紧装置已经显示为在接合方法方面可普遍适用，即，从传统的平面焊接到扩散焊接和烧结技术，以及关于待接合的部件，例如芯片，例如，其表面可以分别相对于基板或芯片，彼此之间的芯片，芯片载体上的LED等，以及他们的不同形貌，都是高度敏感的。
根据本发明的压紧装进一步的优点是，焊接头的接触板相对于载有待接合的部件的支撑板的潜在偏移能够通过在流体压力下适应于相应目标表面的膜来补偿。
此外,在焊接或扩散焊接期间，例如，在TLPS工艺中，膜的柔韧性允许选择不同厚度的焊接材料，因为高度差通常由膜来补偿。
通过可膨胀膜施加压力具有调整膜以适应目标表面的额外的优势，既不会影响待接触部件的位置精确度也不会影响他们表面的灵敏度。
来自压紧装置施加到柔性膜的合适的流体介质源的流体优选为气体，其可以是压缩空气或任何其它可以被加压的气体。
取决于所选的流体，根据使用的接合技术用它同时冷藏或加热也是可能的。
通常，特别是冷却，选择流体而不是气体施加压力至柔性膜，或两者结合。然而，当使用流体施加压力时，相应地必须满足高封闭要求，为的是阻止流体泄露，其可以损坏待接合部件和/或装置。
在本发明有利的实施例中，该膜是由气密性片材，尤其是橡胶状材料制成。材料的选择取决于相应的接合方法、其通常采用的温度、所需的接触压力以及目标表面的形貌。气密性和高度抗撕裂的片材可以用多种厚度和材料组成商购获得，使得根据本发明的压紧装置可以用标准材料以低成本实现。
优选地，根据待接合部件的形貌选择膜的厚度和其可膨胀性，从而使得在接触操作条件下膜在部件上施加至少大致相同的接触压力，而不管它们之间存在的高度上的任何差异。
在一个特别有利的实施例中，膜可以在压板上延伸，也适用于焊接板或模具，其布置成至少基本上平行于支撑板并且至少与其垂直地可移动，其中可以在膜和压板之间提供压力介质，使得膜朝向待接合的部件膨胀。
在该情况下，膜可以通过合适的保持和固定装置，以一种安全、密封的方式，通过其边缘区域依附压板。
焊接板的通常构造，例如，设置为在背离接触表面的一侧上具有中心引导杆的质量板，从而仅需要轻微的修改即可体现本发明。这允许压力介质通过压板中至少一个合适的孔被供给到压板的接触侧，并且因此供给至附接到其上的膜。与压力介质源的相应连接可以分别通过单独的柔性管和/或压力板或引导杆中的通孔实现。
保持和固定装置可以通过任何已知的固定方法实现，采用简单地可释放的连接，如螺钉连接和/或卡扣连接，就由于磨损或改变工艺要求所需的膜更换而言是有利的。
由于密封装置设置在压板和膜之间，如果保持和固定装置包括卡圈，卡圈，特别地，围绕膜的周围延伸，并且允许膜被固定至压板和/或插入的密封装置，那么其是有利的。
在一个有利的实施例中，进一步可以得出，可以在膜背离待接合的部件的一侧上，特别是在膜的非接触操作状态下，将负压施加到膜上。
膜在非接触操作条件下，例如到压板的吸入有利地防止膜由于重力而潜在地下垂，从而接触待接合的部件并且不利地影响它们的定位精度。
加热装置可以设置在压力板上方和/或支撑板下方，以便调节相应类型的连接所需的温度。便利地，支撑板本身可以设置为加热板。
使用上部加热装置和下部加热装置，可以建立两区域加热，其中可以将加热装置设置为红外(IR)辐射器装置，例如，其可以包括平行卤素管的场。
这种IR加热装置具有允许快速加热并且所有元件保持在恒温的优点，从而确保装置中的高温均匀性，并且因此确保部件连接的定性等同性。
为了能够实现用于产生通常需要具有还原空气的封闭系统的高应力连接的接合过程，如果处理腔设置为具有密封壳体的真空腔，并且提供至少一个壳体开口以分别用于真空腔的脱气或抽空和用于充气或引入气体，那么这是有利的。
根据选择的工艺为了确保最佳接触压力，尤其是TLP工艺或TLPB工艺或烧结工艺，本发明的一个有利的实施例设置了一种控制装置，借助该装置至少能够根据选择的工艺和待接合部件的形貌调节压紧装置的流体压力。
根据说明书、附图和权利要求，根据本发明的设备的进一步的优点和有利的实施例是显而易见的。
附图说明
附图中以示意性简化的方式示出了用于将半导体芯片热接合到载体的本发明装置的示例性实施例，并且将在下面更详细地解释。
在附图中：
图1示出了用于热接合半导体部件的装置的简化的三维正视图，所述装置包括真空腔，并且
图2示出了图1中的装置在纵切面的另一三维视图。
具体实施方式
图1和2示出了一种用于将第一微机电部件2热接合至第二微机电部件3的装置1，其中所述第一部件2是不同高度的硅(Si)芯片并且所述第二部件3是本例中的铜(Cu)载体。
装置1包括一两部分壳体4，其能够通过旋转机构5打开和关闭，并且能够通过密封装置6和7密封到环境中。壳体4内形成的处理腔8马上实施为具有开口9的真空腔，分别用于真空腔的脱气或抽空和充气或引入气体。
在处理腔中，以Cu的形式用于第一部件2并且用于其上设置的Si芯片作为第二部件3的支撑板11设置在支撑板10上。在所示的实施例中TLPS工艺用于接合过程，支撑板11设置为加热板。此外，为了调节所需的处理温度，上部加热装置13设置在壳体4的旋转盖4a中的支撑板11的上方，所述上部加热装置13设置为IR辐射器装置，该IR辐射器装置包括平行卤素管13的场。
类似于上部加热装置12，下部加热装置设置在支撑板11的下方，所述下部加热装置14也设置为IR辐射器装置，其中该辐射器装置包括平行卤素管的场，从而允许在接合过程中采用最佳温度分布调节两区域温度。
压紧装置15设置为将芯片3压至Cu载体2上，所述压紧装置15分别包括金属压板或焊接板16，其设置为平行于支撑板11并且在其背离接触压力侧面的一侧上连接至引导杆17。引导杆17以真空密封的方式从壳体4中伸出，并且借助于发动机18在垂直于支撑板11的平面方向是可移动的，即，在当前情况下垂直地移动，并且因此朝向部件2、3并远离它们。在引导杆17的内部形成未详细示出的压力介质管道25。压力介质管道25连接至压力介质源26(只是象征性地示出)，并且通过压板16伸出直到部件2、3并且，因此，直到压板16面向目标表面的一侧。
可膨胀膜19设置在压板16接触压力的一侧，其中膜19是由气密的弹性片材组成并且设计为，在当前情况下，承受压缩空气作为压力介质。
在示出的实施例中，膜在压板16的周围延伸，其在此是圆形的，并且通过保持和固定装置20依附于压板16的边缘区域，后者包括卡圈21，其围绕膜19的周围延伸。卡圈21连接至密封圈22在膜和压板16的边缘上的凸缘状台阶之间形成密封装置，并且还连接至压板16本身。
作为保持和固定装置20的连接装置，设置有螺钉连接件23，其分布在卡圈21以及压板16的周围。
设置控制装置24以至少根据待接合部件2、3的预定义的工艺参数和形貌调节压紧装置15的流体压力，所述控制装置24将压缩空气从压力介质源18导向压板16和膜19的接触表面之间的区域。这使得膜19朝向芯片3膨胀形成目标表面并且接触它们使得对所有芯片3施加等静压接触压力，该芯片3目前具有不同的几何形状和不同的高度。
除了通过压力介质管道25施加的压力，膜19可以在非接触状态下被吸入，使其在该状态下与压板16面接触，并且不是朝向待接合的部件2、3膨胀，从而不会对他们有负面影响。
所示的装置1是普遍适用的，并且不仅可用于本文所述的TLPS工艺，而且可用于其它焊接和扩散焊接工艺以及烧结工艺。根据所选的接合工艺，只有工艺参数，例如温度，大气和视情况而定的可交换膜的厚度和材料将会改变。

Claims (11)

1.一种特别用于在处理腔(8)中热接合微机电部件(2、3)的装置，所述装置采用下部支撑板(11)接收所述待接合部件(2、3)的至少一个第一部件(2)，并且在所述至少一个第一部件(2)的方向上采用压紧装置(15)将压力施加在所述待接合部件(2、3)的至少一个第二部件(3)上，其特征在于，所述压紧装置(15)由可膨胀膜(19)形成，所述可膨胀膜(19)设置用于接触所述至少一个第二部件(3)，其中流体压力，特别是气压，能够在其背离所述待接合的部件(2、3)的一侧施加到所述膜(19)上。
2.根据权利要求1所述的装置，其特征在于，所述膜(19)是由气密性片材组成，特别是橡胶材料。
3.根据权利要求1或2所述的装置，其特征在于，所述膜(19)的厚度及其可膨胀性优选地根据所述待接合部件(2、3)的形貌来选择，从而使得所述膜(19)在接触操作条件下将至少近似相同的接触压力施加至所述部件(2、3)上，而不管他们之间存在的任何高度差。
4.根据权利要求1-3任一项所述的装置，其特征在于，所述膜(19)在压板(16)上延伸，其设置为至少大体平行于所述支撑板(11)并且至少与所述支撑板(11)垂直地可移动，其中可以在所述膜(19)和压板(16)之间提供压力介质使得所述膜(19)朝向所述待接合的部件(2、3)膨胀。
5.根据权利要求1-4任一项所述的装置，其特征在于，所述膜(19)通过所述保持和固定装置(20)以安全且密封的方式，依附于所述压板(16)的边缘区域。
6.根据权利要求1-5任一项所述的装置，其特征在于，所述保持和固定装置(20)包括卡圈(21)，尤其是，其围绕所述膜(19)的周围延伸并且允许所述膜(19)固定至所述压板(16)和/或插入的密封装置(22)。
7.根据权利要求1-6任一项所述的装置，其特征在于，能够在所述膜(19)背离所述待接合的部件(2、3)的一侧上，特别是在所述膜(19)的非接触操作状态下，将负压施加到所述膜(19)上。
8.根据权利要求1-7任一项所述的装置，其特征在于，在所述压板(16)上方和/或所述支撑板(11)的下方设置加热装置(12、14)。
9.根据权利要求1-8任一项所述的装置，其特征在于，所述支撑板(11)设置为加热板。
10.根据权利要求1-9任一项所述的装置，其特征在于，所述处理腔设置为真空腔(8)，所述真空腔(8)具有密封壳体(4)和至少一个所述壳体(4)的开口(9)，所述开口设置为用于所述真空腔(8)的脱气/抽空和充气/气化。
11.根据权利要求1-10任一项所述的装置，其特征在于，通过控制装置(24)至少能够根据所选的工艺，特别是TLPS(瞬时液相焊接)工艺或TLPB(瞬时液相键合)工艺或烧结工艺，以及根据所述待接合部件(2、3)的形貌调节所述压紧装置(15)的流体压力。
CN201580053334.8A 2014-08-14 2015-08-14 一种特别用于热接合微机电部件的装置 Pending CN106716614A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014111634.8A DE102014111634A1 (de) 2014-08-14 2014-08-14 Vorrichtung zum insbesondere thermischen Verbinden mikro-elektromechanischer Bauteile
DE102014111634.8 2014-08-14
PCT/DE2015/000401 WO2016023535A1 (de) 2014-08-14 2015-08-14 Vorrichtung zum insbesondere thermischen verbinden mikro-elektromechanischer bauteile

Publications (1)

Publication Number Publication Date
CN106716614A true CN106716614A (zh) 2017-05-24

Family

ID=54601574

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580053334.8A Pending CN106716614A (zh) 2014-08-14 2015-08-14 一种特别用于热接合微机电部件的装置

Country Status (7)

Country Link
US (1) US20170243851A1 (zh)
EP (1) EP3180801A1 (zh)
JP (1) JP2017525163A (zh)
KR (1) KR20170041267A (zh)
CN (1) CN106716614A (zh)
DE (1) DE102014111634A1 (zh)
WO (1) WO2016023535A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110282598A (zh) * 2019-07-10 2019-09-27 苏州美图半导体技术有限公司 真空环境下晶圆低温键合方法
CN113284813A (zh) * 2021-05-19 2021-08-20 杨汉林 一种芯片加工用键合设备及键合工艺
CN118103967A (zh) * 2021-10-14 2024-05-28 平克塞莫系统有限公司 多功能烧结或扩散焊接设备和冲压工具

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015106298B4 (de) * 2015-04-24 2017-01-26 Semikron Elektronik Gmbh & Co. Kg Vorrichtung, Verfahren und Anlage zur inhomogenen Abkühlung eines flächigen Gegenstandes
CA3041117A1 (en) * 2016-10-20 2018-04-26 Coldblock Technologies Inc. Digester system for processing a plurality of samples for chemical analysis
EP3622554A1 (de) * 2017-05-12 2020-03-18 Heraeus Deutschland GmbH & Co. KG Verfahren zum verbinden von bauelementen mittels metallpaste
FR3073206B1 (fr) * 2017-11-08 2021-03-19 Safran Nacelles Procede de fabrication de panneau structural et/ou acoustique pour nacelle d'ensemble propulsif d'aeronef, et dispositif s'y rapportant
US11804467B2 (en) * 2020-06-25 2023-10-31 Micron Technology, Inc. Radiative heat collective bonder and gangbonder
TW202330132A (zh) * 2021-10-14 2023-08-01 德商平克塞莫系統有限公司 多功能燒結或擴散焊接設備和沖壓工具

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5632434A (en) * 1995-06-29 1997-05-27 Regents Of The University Of California Pressure activated diaphragm bonder
DE102004010399A1 (de) * 2004-03-03 2005-09-22 Atv Technologie Gmbh Vorrichtung zum thermischen Verbinden von Elementen mit einem Substrat
WO2013135302A1 (de) * 2012-03-16 2013-09-19 Ev Group E. Thallner Gmbh Druckübertragungseinrichtung zum bonden von chips auf ein substrat
CN103518256A (zh) * 2011-09-05 2014-01-15 米卡多科技株式会社 真空加热接合装置及真空加热接合方法
CN103674408A (zh) * 2012-09-14 2014-03-26 森萨塔科技公司 气密玻璃密封传感器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524932A (en) * 1946-09-12 1950-10-10 Westinghouse Electric Corp Process for producing bonded mica
US3608809A (en) * 1968-08-16 1971-09-28 Western Electric Co Apparatus for uniform multiple-lead bonding
JPS60236242A (ja) * 1984-05-10 1985-11-25 Yamagata Nippon Denki Kk 粘着テ−プ張り付け方法
GB8912025D0 (en) * 1989-05-25 1989-07-12 British Aerospace Diffusion bonding
GB8917613D0 (en) * 1989-08-01 1989-09-13 British Aerospace Stopping-off process
US5351876A (en) * 1994-01-04 1994-10-04 Texas Instruments Incorporated Apparatus and method for flip-clip bonding
US5820117A (en) * 1995-06-28 1998-10-13 Micron Electronics, Inc. Air bladder fixture tooling for supporting circuit board assembly processing
US7819301B2 (en) * 1997-05-27 2010-10-26 Wstp, Llc Bumping electronic components using transfer substrates
WO1999048645A1 (en) * 1998-03-23 1999-09-30 Speedfam-Ipec Corporation Backing pad for workpiece carrier
EP1030349B2 (de) * 1999-01-07 2013-12-11 Kulicke & Soffa Die Bonding GmbH Verfahren und Vorrichtung zum Behandeln von auf einem Substrat angeordneten elektronischen Bauteilen, insbesondere von Halbleiterchips
DE10105164A1 (de) * 2000-11-06 2002-05-16 Manfred Michalk Verfahren und Vorrichtung zum Kontaktieren von Halbleiterchips
EP1280196A1 (de) * 2001-07-18 2003-01-29 Abb Research Ltd. Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten
US6857627B2 (en) * 2001-10-23 2005-02-22 Micron Technology, Inc. Inflatable bladder with suction for supporting circuit board assembly processing
EP2121231A4 (en) * 2007-01-22 2016-12-28 Univ Maryland HIGH TEMPERATURE soldering materials

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5632434A (en) * 1995-06-29 1997-05-27 Regents Of The University Of California Pressure activated diaphragm bonder
DE102004010399A1 (de) * 2004-03-03 2005-09-22 Atv Technologie Gmbh Vorrichtung zum thermischen Verbinden von Elementen mit einem Substrat
CN103518256A (zh) * 2011-09-05 2014-01-15 米卡多科技株式会社 真空加热接合装置及真空加热接合方法
WO2013135302A1 (de) * 2012-03-16 2013-09-19 Ev Group E. Thallner Gmbh Druckübertragungseinrichtung zum bonden von chips auf ein substrat
CN103674408A (zh) * 2012-09-14 2014-03-26 森萨塔科技公司 气密玻璃密封传感器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110282598A (zh) * 2019-07-10 2019-09-27 苏州美图半导体技术有限公司 真空环境下晶圆低温键合方法
CN110282598B (zh) * 2019-07-10 2021-12-28 苏州美图半导体技术有限公司 真空环境下晶圆低温键合方法
CN113284813A (zh) * 2021-05-19 2021-08-20 杨汉林 一种芯片加工用键合设备及键合工艺
CN118103967A (zh) * 2021-10-14 2024-05-28 平克塞莫系统有限公司 多功能烧结或扩散焊接设备和冲压工具

Also Published As

Publication number Publication date
WO2016023535A1 (de) 2016-02-18
DE102014111634A1 (de) 2016-02-18
US20170243851A1 (en) 2017-08-24
JP2017525163A (ja) 2017-08-31
EP3180801A1 (de) 2017-06-21
KR20170041267A (ko) 2017-04-14

Similar Documents

Publication Publication Date Title
CN106716614A (zh) 一种特别用于热接合微机电部件的装置
TWI490933B (zh) Jointing device
US11400514B2 (en) Sintering tool and method for sintering an electronic subassembly
KR101299779B1 (ko) 접합 장치 및 접합 방법
JP4961342B2 (ja) ２つのウエハの相互接触のための方法および装置
US20080053609A1 (en) Press and method for laminating board-shaped work pieces via pressure and heat
US9196600B2 (en) Device and method for chip pressing
CN103367181A (zh) 用于接合基板的方法和设备
WO2008072543A1 (ja) 貼り合せ基板の分離方法、貼り合せ基板の分離装置及びプログラムを記録したコンピュータ読み取り可能な記録媒体
JP2005219297A (ja) 樹脂モールド方法および樹脂モールド装置
JP5299837B2 (ja) 支持装置、加熱加圧装置及び加熱加圧方法
JP2009070896A (ja) 薄板材貼付装置および薄板材貼付方法
CN205201367U (zh) 一种真空热台夹具
JP2009099717A (ja) 加熱加圧システム
US6820797B2 (en) System and method for seal formation
JP5938132B1 (ja) 部品接合装置及び部品接合システム
JP4106661B2 (ja) 板状熱可塑性樹脂と金型の真空パック装置
KR102658985B1 (ko) 본딩 헤드 및 이를 포함하는 다이 본딩 장치
US20040099715A1 (en) System and method for seal formation
TWI852125B (zh) 用於連接至少一個電子組件之元件的擴散焊接和/或燒結裝置、工具及系統
JPH01253426A (ja) 多段ホットプレス
JP2007123670A (ja) 貼り付け方法及び貼り付け装置
JP2972661B2 (ja) 熱圧着装置
KR20010063393A (ko) 열 압착 원리를 이용한 필름의 완전 평면 접착 방법 및 그장치
JP2011193003A (ja) 加熱加圧システム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170524

WD01 Invention patent application deemed withdrawn after publication