CN106707635A - 阵列基板及其制造方法、液晶显示面板及液晶显示装置 - Google Patents

阵列基板及其制造方法、液晶显示面板及液晶显示装置 Download PDF

Info

Publication number
CN106707635A
CN106707635A CN201710171629.6A CN201710171629A CN106707635A CN 106707635 A CN106707635 A CN 106707635A CN 201710171629 A CN201710171629 A CN 201710171629A CN 106707635 A CN106707635 A CN 106707635A
Authority
CN
China
Prior art keywords
liquid crystal
opening
array base
crystal display
base palte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710171629.6A
Other languages
English (en)
Inventor
徐向阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201710171629.6A priority Critical patent/CN106707635A/zh
Priority to PCT/CN2017/081531 priority patent/WO2018170995A1/zh
Priority to US15/536,791 priority patent/US10451929B2/en
Publication of CN106707635A publication Critical patent/CN106707635A/zh
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553Reflecting elements
    • G02F1/133555Transflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134372Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136218Shield electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136222Colour filters incorporated in the active matrix substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明提供一种阵列基板,包括基板、栅极、栅极绝缘层、有源层、源漏极、数据线,有机绝缘层、像素电极及公共电极,所述像素电极与所述数据线对应的位置均设有开口,所述数据线具有反射作用并形成反射区,用于反射由公共电极层进入的通过开口的光线。本发明还提供一种阵列基板制造方法、液晶显示面板及液晶显示装置。

Description

阵列基板及其制造方法、液晶显示面板及液晶显示装置
技术领域
本发明涉及触摸屏技术领域,尤其涉及一种阵列基板及其制造方法、液晶显示面板及液晶显示装置。
背景技术
半透半反式液晶显示装置(Trans-flective Liquid Crystal Display)同时具有透射式和反射式特性,半透半反式液晶面板在一个像素域内包括有透明电极的透射区和有反射层的反射区。在黑暗的地方可以利用像素区域的透射区和背光源来显示画像,在明亮的地方利用像素区域的反射区和外光来显示画像。因此,半透半反式液晶显示装置可以适应不同的亮暗环境而得到广泛应用。
发明内容
本发明提供一种可以适应不同的亮暗环境的半透半反式阵列基板及液晶显示面板。
本发明还提供一种阵列基板制造方法及液晶显示装置。
本申请提供的阵列基板,包括基板、栅极、栅极绝缘层、有源层、源漏极、数据线,有机绝缘层、像素电极及公共电极,所述像素电极与所述数据线对应的位置均设有开口,所述数据线具有反射作用并形成反射区,用于反射由公共电极层进入的通过开口的光线。
其中,所述开口的宽度小于所述数据线的宽度。也就是说与所述数据线在有机绝缘层上正投影与开口两侧的像素电极有部分重叠,避免发生漏光影响像素。
其中,所述像素电极所在层与所述公共电极所在层层叠设置并通过绝缘层间隔,并且所述开口在对应的公共电极上的正投影的宽度小于该公共电极的宽度,以便光的通过并防止漏光。
其中,与所述开口对应的公共电极的宽度与该开口对应的数据线的宽度相同。
其中,所述阵列基板包括与所述反射区间隔设置的透射区。
其中,所述开口与所述像素电极同一步骤形成。
其中,所述公共电极为具有缝隙的结构,与所述开口相对应的公共电极两个均有缝隙。
本申请提供一种液晶显示面板,包括彩膜基板、所述的阵列基板以及夹持于所述彩膜基板与阵列基板之间的液晶层,所述彩膜基板上与所述开口相对应的位置未设有黑矩阵。
本申请提供的阵列基板制造方法,包括,在基底的有机绝缘层上依次形成像素电极、绝缘层及公共电极,其中像素电极包括与基底上的有机绝缘层下的数据线对应的开口,并且所述开口对应的公共电极两侧为缝隙。
本申请提供一种液晶显示装置,包括所述的液晶显示面板及背光模组。
本申请所述的液晶显示面板在黑暗的地方可以利用像素区域的透射区和背光源来显示画像,在明亮的地方利用像素区域的反射区和外光来显示画像,实现半透半反射液晶显示。
附图说明
为更清楚地阐述本发明的构造特征和功效,下面结合附图与具体实施例来对其进行详细说明。
图1是本发明液晶显示面板示意图。
图2是图1所示的阵列基板的截面示意图。
图3是本发明所述阵列基板制造方法流程图。
具体实施例
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。其中,附图仅用于示例性说明,表示的仅是示意图,不能理解为对本专利的限制。
请参阅图1,本发明提供一种阵列基板10及液晶显示面板,其中,液晶显示面板包括彩膜基板20、所述阵列基板10及位于彩膜基板20与阵列基板10之间的液晶层30。其中凸1中阵列基板10为示意图,具体结构参照图2。
如图2所示,所述阵列基板10包括基板11、栅极12、栅极绝缘层13、有源层14、源漏极15、数据线16,有机绝缘层17、像素电极18及公共电极19。所述数据线16具有反射作用并形成反射区A,用于反射由公共电极层19进入的通过像素电极18的光线。
所述基板11为玻璃板。栅极12形成于所述基板11表面。所述栅极绝缘层13覆盖所述基板11表面及栅极12。所述有源层14形成于所述栅极绝缘层13上,所述源极及漏极形成于所述有源层14上并间隔设置,源漏极15与所述有源层14构成沟道。所述数据线16与所述有源层14及源漏极15同时形成并位于同一层。所述有源层14、源漏极15、数据线16上覆盖第一绝缘层160。有机绝缘层17层叠于所述第一绝缘层160上。所述像素电极18、绝缘层180及公共电极19依次层叠于所述有机绝缘层17上。所述像素电极18通过贯穿所述第一绝缘层160及机绝缘层17的通孔连接源极或者漏极。
进一步的,所述像素电极18与所述数据线16对应的位置设有开口181,所述开口181的宽度小于所述数据线16的宽度。也就是说与所述数据线16在有机绝缘层17上正投影与开口两侧的像素电极18有部分重叠,避免发生漏光影响像素。
所述像素电极18所在层与所述公共电极19所在层层叠设置并通过绝缘层180间隔,并且所述开口181在对应的公共电极191上的正投影的宽度小于该公共电极19的宽度,以便光线通过开口181射入所述数据线16的反射面。本实施例中,所述反射区A为所述数据线16的反射面到公共电极19的部分。
进一步的,与所述开口181对应的公共电极19的宽度与该开口181对应的数据线16的宽度相同。
所述阵列基板10包括与所述反射区A间隔设置的透射区(图未标)。所述开口181与所述像素电极18同一步骤形成。
所述公共电极19为具有缝隙的结构,与每一所述开口181相对的公共电极19两边为缝隙,以便光线进入反射区。
请参阅图3,本申请还提供一种所述阵列基板制造方法,该方法包括,步骤S1,在基底11的有机绝缘层17。
步骤S2,在基底11的有机绝缘层17上依次形成像素电极18、绝缘层180及公共电极19,其中像素电极18包括与基底11上的有机绝缘层17下的数据线16对应的开口181,并且所述开口181对应的公共电极19两侧为缝隙。
具体的,所述步骤S1包括在基底11上形成形成第一金属层,图案化所述第一金属层形成所述栅极12。
在所述栅极12及所述基板11的表面上沉积栅极绝缘层13。所述栅极绝缘层13的材质选择氧化硅、氮化硅层,氮氧化硅层及其组合的其中之一。
在所述栅极绝缘层13上依次形成半导体层及第二金属层,图案化所述半导体层及第二金属层分别形成所述有源层14、源漏极15以及与所述源漏极间隔设置的具有反射功能的数据线16。所述第二金属层的材质选自铜、钨、铬、铝及其组合的其中之一。其中所述半导体层用于形成所述源极和漏极之间导通或者断开的沟道。
其中,图案化工艺包括通过灰色调掩模板进行曝光、显影、金属湿刻、蚀刻、烧光阻和剥离的等构图成膜工艺形成如图1所示的栅线12、有源层14、源漏极15、数据线16。同样包括通过沉积基础层、使用掩模板进行曝光、显影、蚀刻形成有机绝缘层17、第一绝缘13、绝缘层180、像素电极18及公共电极19。
本申请所述的液晶显示面板的彩膜基板20上与所述开口181相对应的位置未设有黑矩阵,以便光线进入,同时节省加工工艺及彩膜基板厚度。本申请所述的液晶显示面板在黑暗的地方可以利用像素区域的透射区和背光源来显示画像,在明亮的地方利用像素区域的反射区和外光来显示画像,实现半透半反射液晶显示。
本申请还提供一种液晶显示装置,其包括所述的液晶显示面板及背光模组,所述液晶显示面板层叠于所述背光模组上,通过背光模组提供光源。
以上所述是本发明的优选实施例,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。

Claims (10)

1.一种阵列基板,包括基板、栅极、栅极绝缘层、有源层、源漏极、数据线,有机绝缘层、像素电极及公共电极,其特征在于,所述像素电极与所述数据线对应的位置均设有开口,所述数据线具有反射作用并形成反射区,用于反射由公共电极层进入的通过开口的光线。
2.如权利要求1所述的阵列基板,其特征在于,所述开口的宽度小于所述数据线的宽度。
3.如权利要求2所述的阵列基板,其特征在于,所述像素电极所在层与所述公共电极所在层层叠设置并通过绝缘层间隔,并且所述开口在对应的公共电极上的正投影的宽度小于该公共电极的宽度。
4.如权利要求3所述的阵列基板,其特征在于,与所述开口对应的公共电极的宽度与该开口对应的数据线的宽度相同。
5.如权利要求4所述的阵列基板,其特征在于,所述阵列基板包括与所述反射区间隔设置的透射区。
6.如权利要求1所述的阵列基板,其特征在于,所述开口与所述像素电极同一步骤形成。
7.如权利要求1所述的阵列基板,其特征在于,所述公共电极为具有缝隙的结构,与所述开口相对应的公共电极两个均有缝隙。
8.一种液晶显示面板,其特征在于,包括彩膜基板、权利要求1-7任一项所述的阵列基板以及夹持于所述彩膜基板与阵列基板之间的液晶层,所述彩膜基板上与所述开口相对应的位置未设有黑矩阵。
9.一种阵列基板制造方法,其特征在于,方法包括,在基地上形成有机绝缘层;
在基底的有机绝缘层上依次形成像素电极、绝缘层及公共电极,其中像素电极包括与基底上的有机绝缘层下的数据线对应的开口,并且所述开口对应的公共电极两侧为缝隙。
10.一种液晶显示装置,其特征在于,包括权利要求8所述的液晶显示面板及背光模组,所述背光模组与所述液晶面板层叠为所述液晶面板提供光源。
CN201710171629.6A 2017-03-20 2017-03-20 阵列基板及其制造方法、液晶显示面板及液晶显示装置 Pending CN106707635A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201710171629.6A CN106707635A (zh) 2017-03-20 2017-03-20 阵列基板及其制造方法、液晶显示面板及液晶显示装置
PCT/CN2017/081531 WO2018170995A1 (zh) 2017-03-20 2017-04-21 阵列基板及其制造方法、液晶显示面板及液晶显示装置
US15/536,791 US10451929B2 (en) 2017-03-20 2017-04-21 Array substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710171629.6A CN106707635A (zh) 2017-03-20 2017-03-20 阵列基板及其制造方法、液晶显示面板及液晶显示装置

Publications (1)

Publication Number Publication Date
CN106707635A true CN106707635A (zh) 2017-05-24

Family

ID=58886859

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710171629.6A Pending CN106707635A (zh) 2017-03-20 2017-03-20 阵列基板及其制造方法、液晶显示面板及液晶显示装置

Country Status (3)

Country Link
US (1) US10451929B2 (zh)
CN (1) CN106707635A (zh)
WO (1) WO2018170995A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019218659A1 (zh) * 2018-05-17 2019-11-21 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板和显示装置
CN111640766A (zh) * 2020-06-22 2020-09-08 武汉华星光电技术有限公司 一种阵列基板及其制作方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690316B (zh) * 2018-08-23 2020-04-11 黃聰珍 噴水馬達用之噴水蓋結構

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102176095A (zh) * 2011-02-24 2011-09-07 华映视讯(吴江)有限公司 液晶显示面板的薄膜晶体管基板
JP2011227116A (ja) * 2010-04-15 2011-11-10 Seiko Epson Corp 液晶装置、液晶装置の製造方法、および投射型表示装置
CN102768444A (zh) * 2011-05-06 2012-11-07 瀚宇彩晶股份有限公司 液晶显示面板
CN103439840A (zh) * 2013-08-30 2013-12-11 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制造方法
CN103715206A (zh) * 2013-12-31 2014-04-09 信利半导体有限公司 一种像素单元、阵列基板及显示面板
CN103901686A (zh) * 2012-12-26 2014-07-02 乐金显示有限公司 边缘场开关模式液晶显示装置的阵列基板及其制造方法
CN104280932A (zh) * 2014-10-20 2015-01-14 京东方科技集团股份有限公司 一种显示面板和显示装置
CN104345511A (zh) * 2014-09-30 2015-02-11 南京中电熊猫液晶显示科技有限公司 像素结构及其制造方法、显示面板
CN105974692A (zh) * 2016-07-25 2016-09-28 京东方科技集团股份有限公司 一种阵列基板和液晶显示面板
CN206020892U (zh) * 2016-08-31 2017-03-15 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080049176A1 (en) * 2006-08-25 2008-02-28 Samsung Electronics Co., Ltd. Thin film transistor-array substrate, transflective liquid crystal display device with the same, and method for manufacturing the same
KR101517034B1 (ko) * 2008-12-04 2015-05-04 엘지디스플레이 주식회사 반사투과형 액정표시장치용 어레이 기판
KR102315816B1 (ko) * 2015-03-09 2021-10-20 엘지디스플레이 주식회사 액정 표시 장치

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011227116A (ja) * 2010-04-15 2011-11-10 Seiko Epson Corp 液晶装置、液晶装置の製造方法、および投射型表示装置
CN102176095A (zh) * 2011-02-24 2011-09-07 华映视讯(吴江)有限公司 液晶显示面板的薄膜晶体管基板
CN102768444A (zh) * 2011-05-06 2012-11-07 瀚宇彩晶股份有限公司 液晶显示面板
CN103901686A (zh) * 2012-12-26 2014-07-02 乐金显示有限公司 边缘场开关模式液晶显示装置的阵列基板及其制造方法
CN103439840A (zh) * 2013-08-30 2013-12-11 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制造方法
CN103715206A (zh) * 2013-12-31 2014-04-09 信利半导体有限公司 一种像素单元、阵列基板及显示面板
CN104345511A (zh) * 2014-09-30 2015-02-11 南京中电熊猫液晶显示科技有限公司 像素结构及其制造方法、显示面板
CN104280932A (zh) * 2014-10-20 2015-01-14 京东方科技集团股份有限公司 一种显示面板和显示装置
CN105974692A (zh) * 2016-07-25 2016-09-28 京东方科技集团股份有限公司 一种阵列基板和液晶显示面板
CN206020892U (zh) * 2016-08-31 2017-03-15 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019218659A1 (zh) * 2018-05-17 2019-11-21 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板和显示装置
CN111640766A (zh) * 2020-06-22 2020-09-08 武汉华星光电技术有限公司 一种阵列基板及其制作方法
CN111640766B (zh) * 2020-06-22 2023-12-12 武汉华星光电技术有限公司 一种阵列基板及其制作方法

Also Published As

Publication number Publication date
US20190094631A1 (en) 2019-03-28
WO2018170995A1 (zh) 2018-09-27
US10451929B2 (en) 2019-10-22

Similar Documents

Publication Publication Date Title
JP4947510B2 (ja) アクティブマトリクス型表示装置及びその製造方法
CN103984175B (zh) 半穿透式半反射式液晶显示器及其制造方法
EP2757412A1 (en) Tft array substrate, fabrication method thereof, and liquid crystal display device
WO2016086531A1 (zh) 阵列基板及其制作方法
CN104317097A (zh) 一种coa基板及其制作方法和显示装置
CN104298040A (zh) 一种coa基板及其制作方法和显示装置
KR20130131701A (ko) 액정표시장치 어레이 기판 및 그 제조방법
WO2017133126A1 (zh) 阵列基板及阵列基板的制备方法
US11971639B2 (en) Array substrate, manufacturing method thereof, and display panel
WO2013135073A1 (zh) 半透半反液晶显示阵列基板及其制造方法、显示装置
WO2018223430A1 (zh) 阵列基板及其制造方法、显示面板
CN106057830A (zh) 一种阵列基板、显示面板及阵列基板制备方法
WO2017140058A1 (zh) 阵列基板及其制作方法、显示面板及显示装置
CN102629608A (zh) 一种阵列基板及其制造方法和显示装置
KR20190131582A (ko) Tft 기판의 제조 방법 및 tft 기판
CN106707635A (zh) 阵列基板及其制造方法、液晶显示面板及液晶显示装置
CN107799466A (zh) Tft基板及其制作方法
CN100368917C (zh) 液晶显示器的阵列基板及其制造方法
JP6440228B2 (ja) 薄膜トランジスタ基板の製造方法
CN204129400U (zh) 一种coa基板和显示装置
CN105679773B (zh) 阵列基板及阵列基板的制备方法
WO2016161700A1 (zh) 一种薄膜晶体管阵列基板及其制造方法
CN103280197B (zh) 一种阵列基板和显示面板
CN104851891B (zh) 一种阵列基板及其制备方法、显示装置
EP3343623B1 (en) Array substrate, manufacturing method thereof and display panel

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen

Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd.

Address before: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen

Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd.

WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170524