CN106696408B - 层叠体和联合体以及半导体装置的制造方法 - Google Patents

层叠体和联合体以及半导体装置的制造方法 Download PDF

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CN106696408B
CN106696408B CN201610959486.0A CN201610959486A CN106696408B CN 106696408 B CN106696408 B CN 106696408B CN 201610959486 A CN201610959486 A CN 201610959486A CN 106696408 B CN106696408 B CN 106696408B
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back surface
protection film
surface protection
semiconductor back
semiconductor
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CN106696408A (zh
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木村龙一
高本尚英
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Nitto Denko Corp
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Nitto Denko Corp
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Abstract

本发明涉及层叠体和联合体以及半导体装置的制造方法，本发明提供能够减少切割时在芯片侧面产生的龟裂的层叠体等。本发明涉及包括切割片和半导体背面保护薄膜的层叠体。切割片包括基材层和配置在基材层上的粘合剂层。半导体背面保护薄膜配置在粘合剂层上。固化后的半导体背面保护薄膜的拉伸储能模量在23℃～80℃全部范围下为1GPa以上。

Description

层叠体和联合体以及半导体装置的制造方法
技术领域
本发明涉及层叠体、联合体和半导体装置的制造方法。
背景技术
半导体背面保护薄膜承担抑制半导体晶圆的翘曲的作用、保护背面的作用等。
已知一体化地处理半导体背面保护薄膜和切割片的方法。例如，在固定在切割片上的半导体背面保护薄膜上固定半导体晶圆，通过切割而形成包括芯片和切割后半导体背面保护薄膜的组合，从切割片上剥离组合的方法。
现有技术文献
专利文献
专利文献1：日本特开2010-199541号公报
发明内容
发明要解决的问题
在上述的方法中，有时因刀片切割时的冲击、摩擦而在芯片侧面出现龟裂。需要减少芯片侧面的龟裂(侧壁碎裂：sidewall chipping)。其原因在于龟裂有使外观变差、使可靠性降低的担心。
本发明的目的之一在于提供能够减少切割时在芯片侧面产生的龟裂的层叠体。本发明的目的之一在于提供能够减少切割时在芯片侧面产生的龟裂的联合体。本发明的目的之一在于提供能够减少切割时在芯片侧面产生的龟裂的半导体装置的制造方法。
用于解决问题的方案
本发明涉及包括切割片和半导体背面保护薄膜的层叠体。切割片包括基材层和配置在基材层上的粘合剂层。半导体背面保护薄膜配置在粘合剂层上。固化后的半导体背面保护薄膜的拉伸储能模量在23℃～80℃全部范围下为1GPa以上。由于为1GPa以上，所以能够减少切割时在芯片侧面产生的龟裂。
本发明还涉及包括剥离衬垫和配置在剥离衬垫上的层叠体的联合体。
本发明还涉及半导体装置的制造方法，所述半导体装置的制造方法包括如下工序：在层叠体的半导体背面保护薄膜上固定半导体晶圆的工序(A)；在工序(A)之后使半导体背面保护薄膜固化的工序(B)；在工序(B)之后，通过对固定在半导体背面保护薄膜上的半导体晶圆进行切割，从而形成组合的工序(C)和从切割片上剥离组合的工序(D)。组合包括半导体芯片和固定在半导体芯片上的切割后半导体背面保护薄膜。本发明的半导体装置的制造方法能够减少切割时在芯片侧面产生的龟裂。其原因在于：固化后的半导体背面保护薄膜的拉伸储能模量在23℃～80℃全部范围下为1GPa以上，在工序(B)(使半导体背面保护薄膜固化的工序)之后对半导体晶圆进行切割。
附图说明
图1是联合体的平面示意图。
图2是联合体的一部分的截面示意图。
图3是半导体装置的制造工序的截面示意图。
图4是半导体装置的制造工序的截面示意图。
图5是半导体装置的制造工序的截面示意图。
图6是变形例1中的层叠体的截面示意图。
图7是层叠体和固定在层叠体上的晶圆截面示意图，示出了切割刀片的切口深度。
图8是实施例中的组合(包括硅芯片和切割后半导体背面保护薄膜)的侧面图，示出了裂纹的深度。
附图标记说明
1 联合体
11 半导体背面保护薄膜
12 切割片
121 基材层
122 粘合剂层
122A 第一部分
122B 第二部分
13 剥离衬垫
71 层叠体
4 半导体晶圆
5 组合
6 被粘物
8 吸附台
41 半导体芯片
51 凸块
61 导电材料
111 切割后半导体背面保护薄膜
具体实施方式
以下列举实施方式详细说明本发明，但本发明不限定于这些实施方式。
[实施方式1]
(联合体1)
如图1和图2所示，联合体1包括剥离衬垫13和配置在剥离衬垫13上的层叠体71a、71b、71c、……、71m(以下统称为“层叠体71”。)。层叠体71a与层叠体71b之间的距离、层叠体71b与层叠体71c之间的距离、……层叠体71l与层叠体71m之间的距离是恒定的。联合体1可以制成卷状。
层叠体71包括切割片12和配置在切割片12上的半导体背面保护薄膜11。
切割片12包括基材层121和配置在基材层121上的粘合剂层122。粘合剂层122包含第一部分122A。第一部分122A进行了固化。第一部分122A与半导体背面保护薄膜11接触。粘合剂层122还包含配置在第一部分122A周围的第二部分122B。第二部分122B具有通过能量射线而固化的性质。作为能量射线可列举出紫外线等。第二部分122B未与半导体背面保护薄膜11接触。
(半导体背面保护薄膜11)
半导体背面保护薄膜11的双面可以通过第一主面和与第一主面相向的第二主面定义。第一主面与粘合剂层122接触。第二主面与剥离衬垫13接触。
半导体背面保护薄膜11为未固化状态。未固化状态包含半固化状态。优选为半固化状态。
固化后的半导体背面保护薄膜11的拉伸储能模量在23℃～80℃全部范围下为1GPa以上。由于为1GPa以上，所以能够减少切割时在芯片侧面产生的龟裂。优选为2GPa以上。固化后的半导体背面保护薄膜11的拉伸储能模量可以通过丙烯酸类树脂的含量、热固化性树脂的含量等来调整。需要说明的是，半导体背面保护薄膜11可以通过120℃2小时的加热使其固化。固化后的半导体背面保护薄膜11的拉伸储能模量通过实施例中所述的方法进行测定。
固化后的半导体背面保护薄膜11的23℃拉伸储能模量优选为2GPa以上、更优选为2.5GPa以上。固化后的半导体背面保护薄膜11的23℃拉伸储能模量的上限例如为50GPa、10GPa、7GPa、5GPa。另一方面，固化后的半导体背面保护薄膜11的80℃拉伸储能模量的上限例如为50GPa、10GPa、7GPa、5GPa。
固化后的半导体背面保护薄膜11的80℃拉伸储能模量与固化后的半导体背面保护薄膜11的23℃拉伸储能模量之比(80℃拉伸储能模量/23℃拉伸储能模量)优选为0.3以上、更优选为0.4以上。若低于0.3，则因相对于温度的弹性模量变化大而容易产生芯片侧面的龟裂。比值(80℃拉伸储能模量/23℃拉伸储能模量)优选为1.0以下、更优选为0.9以下、进一步优选为0.8以下。
半导体背面保护薄膜11是有色的。若为有色的，则有时可以简单地区别切割片12和半导体背面保护薄膜11。半导体背面保护薄膜11优选为例如黑色、蓝色、红色等深色。特别优选为黑色。其原因在于易于视觉识别激光标记。
深色是指，基本上L*a*b*色度体系中规定的L*为60以下(0～60)[优选为50以下(0～50)、进一步优选为40以下(0～40)]的深颜色的意思。
另外，黑色是指，基本上L*a*b*色度体系中规定的L*为35以下(0～35)[优选为30以下(0～30)、进一步优选为25以下(0～25)]的黑色系颜色的意思。需要说明的是，黑色中，L*a*b*色度体系中规定的a*、b*可以分别根据L*的值进行适宜选择。作为a*、b*，适合的是，例如，优选两者均优选为-10～10、更优选为-5～5、特别优选为-3～3的范围(尤其是0或几乎为0)。
需要说明的是，L*a*b*色度体系中规定的L*、a*、b*通过使用色彩色差计(商品名“CR-200”MINOLTA公司制造；色彩色差计)进行测定而求得。需要说明的是，L*a*b*色度体系是国际照明委员会(CIE)于1976年推荐的色彩空间，是被称为CIE1976(L*a*b*)色度体系的色彩空间的意思。另外，L*a*b*色度体系在日本工业规格中在JIS Z 8729中有所规定。
在85℃和85％RH的气氛下放置168小时时的半导体背面保护薄膜11的吸湿率优选为1重量％以下、更优选为0.8重量％以下。通过为1重量％以下，从而能够提高激光标识性。吸湿率可以通过无机填充剂的含量等进行控制。半导体背面保护薄膜11的吸湿率的测定方法如下所述。即，在85℃、85％RH的恒温恒湿槽中将半导体背面保护薄膜11放置168小时，基于放置前后的重量减少率求出吸湿率。
将通过使半导体背面保护薄膜11固化而得到的固化物在85℃和85％RH的气氛下放置168小时时的吸湿率优选为1重量％以下、更优选为0.8重量％以下。通过为1重量％以下而能够提高激光标识性。吸湿率可以通过无机填充剂的含量等进行控制。固化物的吸湿率的测定方法如下所述。即，在85℃、85％RH的恒温恒湿槽中将固化物放置168小时，基于放置前后的重量减少率求出吸湿率。
半导体背面保护薄膜11中的挥发成分的比例越少越好。具体而言，加热处理后的半导体背面保护薄膜11的重量减少率(重量减少量的比例)优选为1重量％以下、更优选为0.8重量％以下。加热处理的条件例如在250℃下1小时。若为1重量％以下，则激光标识性好。能够抑制回流焊工序中裂纹的产生。重量减少率是指对热固化后的半导体背面保护薄膜11进行250℃、1小时加热时的值。
半导体背面保护薄膜11的未固化状态下的23℃的拉伸储能模量优选为1GPa以上。若为1GPa以上，则能够防止半导体背面保护薄膜11附着于载带上。23℃的拉伸储能模量的上限例如为50GPa。23℃的拉伸储能模量可以通过树脂成分的种类、其含量、填充材料的种类、其含量等进行控制。使用Rheometrics Co.,Ltd.制造的动态粘弹性测定装置“SolidAnalyzer RS A2”，通过拉伸模式，在样品宽度：10mm、样品长度：22.5mm、样品厚度：0.2mm、频率：1Hz、升温速度：10℃/分钟、氮气氛下、规定的温度(23℃)来测定拉伸储能模量。
半导体背面保护薄膜11中的可见光(波长：380nm～750nm)的透光率(可见光透射率)没有特别限制，例如，优选为20％以下(0％～20％)的范围、更优选为10％以下(0％～10％)、特别优选为5％以下(0％～5％)。半导体背面保护薄膜11的可见光透射率大于20％时，存在由于光线通过而对半导体芯片产生不良影响的担心。另外，可见光透射率(％)可以通过半导体背面保护薄膜11的树脂成分的种类、其含量、着色剂(颜料、染料等)的种类、其含量、无机填充材料的含量等进行控制。
半导体背面保护薄膜11的可见光透射率(％)可以如下所述地进行测定。即，制作厚度(平均厚度)20μm的半导体背面保护薄膜11单体。其次，用规定的强度对半导体背面保护薄膜11照射波长：380nm～750nm的可见光线[装置：岛津制作所制造的可见光发生装置(商品名“ABSORPTION SPECTRO PHOTOMETER”)]，测定透射的可见光线的强度。进而，可以根据可见光线透射半导体背面保护薄膜11前后的强度变化求出可见光透射率的值。
半导体背面保护薄膜11优选含有着色剂。着色剂例如为染料、颜料。其中优选为染料、更优选为黑色染料。
半导体背面保护薄膜11中的着色剂的含量优选为0.5重量％以上、更优选为1重量％以上、进一步优选为2重量％以上。半导体背面保护薄膜11中的着色剂的含量优选为10重量％以下、更优选为8重量％以下、进一步优选为5重量％以下。
半导体背面保护薄膜11含有树脂成分。例如为热塑性树脂、热固化性树脂等。
作为热塑性树脂，例如可列举出天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁二烯橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙、6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET(聚对苯二甲酸乙二醇酯)、PBT(聚对苯二甲酸丁二醇酯)等饱和聚酯树脂、聚酰胺酰亚胺树脂、或氟树脂等。热塑性树脂可以单独使用或组合使用2种以上。其中，丙烯酸类树脂是适合的。
在半导体背面保护薄膜11中，树脂成分100重量％中的丙烯酸类树脂的含量优选为0.1重量％以上、更优选为1重量％以上、进一步优选为5重量％以上。树脂成分100重量％中的丙烯酸类树脂的含量优选为30重量％以下、更优选为25重量％以下。若为30重量％以下，则能够防止切割后半导体背面保护薄膜彼此密合。割断性也好。
作为热固化性树脂，可列举出环氧树脂、酚醛树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、有机硅树脂、热固化性聚酰亚胺树脂等。热固化性树脂可以单独使用或组合使用2种以上。作为热固化性树脂，会使半导体芯片腐蚀的离子性杂质等的含量少的环氧树脂是尤其适合的。另外，作为环氧树脂的固化剂可以适宜地使用酚醛树脂。
作为环氧树脂，没有特别限定，例如可以使用双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟苯基甲烷型环氧树脂、四羟苯基乙烷型环氧树脂等双官能环氧树脂、多官能环氧树脂、或乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油胺型环氧树脂等环氧树脂。
进而，酚醛树脂作为环氧树脂的固化剂发挥作用，例如可列举出苯酚酚醛清漆树脂、酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。酚醛树脂可以单独使用或组合使用2种以上。这些酚醛树脂当中特别优选为苯酚酚醛清漆树脂、酚芳烷基树脂。其原因在于能够使半导体装置的连接可靠性提高。
环氧树脂与酚醛树脂的配混比例例如以相对于环氧树脂中的环氧基1当量，酚醛树脂中的羟基成为0.5当量～2.0当量的方式配混是适合的。更适合的是0.8当量～1.2当量。
树脂成分100重量％中的环氧树脂和酚醛树脂的总含量优选为70重量％以上、更优选为75重量％以上。树脂成分100重量％中的环氧树脂和酚醛树脂的总含量优选为99.9重量％以下、更优选为99重量％以下、进一步优选为95重量％以下。
半导体背面保护薄膜11可以含有热固化促进催化剂。例如为胺系固化促进剂、磷系固化促进剂、咪唑系固化促进剂、硼系固化促进剂、磷-硼系固化促进剂等。
为了预先使半导体背面保护薄膜11进行一定程度的交联，优选在制作时事先添加与聚合物的分子链末端的官能团等反应的多官能性化合物作为交联剂。由此，能够提高在高温下的粘接特性，谋求耐热性的改善。
半导体背面保护薄膜11可以含有填充剂。无机填充剂是适合的。无机填充剂例如为二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅、铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等。填充剂可以单独使用或组合使用2种以上。其中优选为二氧化硅、特别优选为熔融二氧化硅。无机填充剂的平均粒径优选在0.1μm～80μm的范围内。无机填充剂的平均粒径例如可以通过激光衍射型粒径分布测定装置来测定。
半导体背面保护薄膜11中的填充剂的含量优选为10重量％以上、更优选为20重量％以上、进一步优选为30重量％以上。半导体背面保护薄膜11中的填充剂的含量优选为70重量％以下、更优选为60重量％以下、进一步优选为50重量％以下。
半导体背面保护薄膜11可以适宜含有其它的添加剂。作为其它的添加剂，例如可列举出阻燃剂、硅烷偶联剂、离子捕捉剂、增量剂、防老剂、抗氧化剂、表面活性剂等。
半导体背面保护薄膜11的厚度优选为2μm以上、更优选为4μm以上、进一步优选为6μm以上、特别优选为10μm以上。半导体背面保护薄膜11的厚度优选为200μm以下、更优选为160μm以下、进一步优选为100μm以下、特别优选为80μm以下。
(切割片12)
切割片12包括基材层121和配置在基材层121上的粘合剂层122。
粘合剂层122的厚度优选为3μm以上、更优选为5μm以上。粘合剂层122的厚度优选为50μm以下、更优选为30μm以下。
粘合剂层122由粘合剂形成。粘合剂例如为丙烯酸系粘合剂、橡胶系粘合剂。其中优选为丙烯酸系粘合剂。丙烯酸系粘合剂是例如将以(甲基)丙烯酸烷基酯的1种或2种以上作为单体使用的丙烯酸系聚合物(均聚物或共聚物)作为基础聚合物的丙烯酸系粘合剂。
基材121的厚度优选为50μm～150μm。基材121优选具有透射能量射线的性质。
(剥离衬垫13)
剥离衬垫13例如为聚对苯二甲酸乙二醇酯(PET)薄膜。
(半导体装置的制造方法)
如图3所示，在层叠体71的半导体背面保护薄膜11上固定半导体晶圆4。具体而言，使用压接辊等推压部件在50℃～100℃下将层叠体71压接在半导体晶圆4上。半导体晶圆4的双面可以通过电路面和与电路面相向的背面(也称为非电路面、非电极形成面等)定义。半导体晶圆4例如为硅晶圆。
通过对半导体背面保护薄膜11进行加热而使半导体背面保护薄膜11固化。例如，将加热器冲着切割片12上，越过切割片12对半导体背面保护薄膜11进行加热。
如图4所示，将切割片12固定在吸附台8上，切断半导体晶圆4，形成组合5。即，通过对半导体晶圆4进行切割而形成组合5。组合5包括半导体芯片41和固定在半导体芯片41的背面上的切割后半导体背面保护薄膜111。半导体芯片41的双面可以通过电路面和与电路面相向的背面定义。组合5固定在切割片12上。
通过针形件上推组合5，从切割片12上剥离组合5。
如图5所示，通过倒装芯片接合方式(倒装芯片安装方式)将组合5固定在被粘物6上。具体而言，在半导体芯片41的电路面与被粘物6相向的状态下，将组合5固定在被粘物6上。例如，使半导体芯片41的凸块51接触被粘物6的导电材料(焊料等)61，一边推压一边使导电材料61熔融。组合5与被粘物6之间有空隙。空隙的高度通常为30μm～300μm左右。固定后可以进行空隙等的清洗。
作为被粘物6，可以使用引线框、电路基板(布线电路基板等)等基板。作为这种基板的材质，没有特别限定，可列举出陶瓷基板、塑料基板。作为塑料基板，例如可列举出环氧基板、双马来酰亚胺三嗪基板、聚酰亚胺基板等。
作为凸块、导电材料的材质，没有特别限定，例如可列举出锡-铅系金属材料、锡-银系金属材料、锡-银-铜系金属材料、锡-锌系金属材料、锡-锌-铋系金属材料等焊料类(合金)、金系金属材料、铜系金属材料等。需要说明的是，导电材料61的熔融时的温度通常为260℃左右。若切割后半导体背面保护薄膜111含有环氧树脂，则可耐受该温度。
用密封树脂对组合5与被粘物6之间的空隙进行密封。通常通过在175℃下进行60秒钟～90秒钟的加热而使密封树脂固化。
作为密封树脂，只要是具有绝缘性的树脂(绝缘树脂)就没有特别限制。作为密封树脂，更优选为具有弹性的绝缘树脂。作为密封树脂，例如可列举出含有环氧树脂的树脂组合物等。另外，作为利用含有环氧树脂的树脂组合物而得到的密封树脂，作为树脂成分，除了环氧树脂以外，还可以含有除了环氧树脂以外的热固化性树脂(酚醛树脂等)、热塑性树脂等。需要说明的是，作为酚醛树脂，也可作为环氧树脂的固化剂来利用。密封树脂的形状为薄膜状、片状等。
根据以上的方法而得到的半导体装置(倒装芯片安装的半导体装置)包含被粘物6和固定在被粘物6上的组合5。
可以用激光在半导体装置的切割后半导体背面保护薄膜111上进行印刷。需要说明的是，在用激光进行印刷时，可以利用公知的激光标记装置。另外，作为激光，可以利用气体激光、固体激光、液体激光等。具体而言，作为气体激光，没有特别限制，可以利用公知的气体激光，二氧化碳气体激光(CO2激光)、准分子激光(ArF激光、KrF激光、XeCl激光、XeF激光等)是适合的。另外，作为固体激光，没有特别限制，可以利用公知的固体激光，YAG激光(Nd：YAG激光等)、YVO4激光是适合的。
利用倒装芯片安装方式安装的半导体装置比以芯片接合安装方式安装的半导体装置还薄且小。因此，可以适宜地用作各种电子设备·电子部件或它们的材料·构件。具体而言，作为利用了倒装芯片安装的半导体装置的电子设备，可列举出所谓的“移动电话”、“PHS”、小型的电脑(例如，所谓的“PDA”(移动信息终端)、所谓的“笔记本电脑”、所谓的“netbook(商标)”、所谓的“可穿戴式电脑”等)、“移动电话”和电脑经一体化而成的小型的电子设备、所谓的“digital camera(商标)”、所谓的“数码摄像机”、小型的电视机、小型的游戏设备、小型的数码音频播放器、所谓的“电子记事本”、所谓的“电子词典”、所谓的“电子书籍”用电子设备终端、小型的数码型的手表等可移动型的电子设备(可携带的电子设备)等，当然，也可以是除了可移动型以外(设置型等)的电子设备(例如，所谓的“台式电脑”、平面电视、记录·再现用电子设备(硬盘记录器、DVD播放器等)、投影仪、微型机械等)等。另外，作为电子部件或电子设备·电子部件的材料·构件，例如可列举出所谓的“CPU”的构件、各种存储装置(所谓的“存储器”、硬盘等)的构件等。
(变形例1)
粘合剂层122的第一部分122A具有通过能量射线而固化的性质。粘合剂层122的第二部分122B也具有通过能量射线而固定的性质。在变形例1中，在形成组合5的工序之后，对粘合剂层122照射能量射线并拾取组合5。若照射能量射线，则组合5的拾取较容易。
(变形例2)
粘合剂层122的第一部分122A通过能量射线而固化。粘合剂层122的第二部分122B也通过能量射线而固化。
(变形例3)
如图6所示，粘合剂层122的单面整面与半导体背面保护薄膜11接触。
(其它)
变形例1～变形例3等可以任意地组合。
如上所述，实施方式1的半导体装置的制造方法包括如下工序：在层叠体71的半导体背面保护薄膜11上固定半导体晶圆4的工序(A)；在工序(A)之后使半导体背面保护薄膜11固化的工序(B)；在工序(B)之后，通过对固定在半导体背面保护薄膜11上的半导体晶圆4进行切割，从而形成组合5的工序(C)和从切割片12上剥离组合5的工序(D)。
实施例
以下，示例性地对本发明的优选的实施例进行详细说明。其中，对该实施例所记载的材料、配混量等，除非有特别限定性的记载，否则并非意图将本发明的范围仅限于这些实施例。
[实施例1]
(半导体背面保护薄膜的制作)
相对于以丙烯酸乙酯-甲基丙烯酸甲酯作为主要成分的丙烯酸酯系聚合物(根上工业株式会社制造PARACRON W-197C)的固体成分(除去溶剂的固体成分)100重量份，将环氧树脂(三菱化学株式会社制造jER YL980)300重量份、环氧树脂(东都化成株式会社制造KI-3000)130重量份、酚醛树脂(明和化成株式会社制造MEH7851-SS)460重量份、球状二氧化硅(Admatechs Co.,Ltd.制造SO-25R平均粒径0.5μm的球状二氧化硅)690重量份、染料(Orient Chemical Industry Co.,Ltd.制造OIL BLACK BS)10重量份和催化剂(四国化成株式会社制造2PHZ)80重量份溶解于甲乙酮中，制备了固体成分浓度23.6重量％的树脂组合物的溶液。将树脂组合物的溶液涂布于剥离衬垫(经有机硅脱模处理过的厚度50μm的聚对苯二甲酸乙二醇酯薄膜)，在130℃下使其干燥2分钟。通过以上的方法而得到平均厚度为20μm的薄膜。从薄膜切取直径为330mm的圆盘状薄膜(以下在实施例中称为“半导体背面保护薄膜”)。
(层叠体的制作)
使用手压辊将半导体背面保护薄膜附于切割片(日东电工株式会社制造V-8-AR包括平均厚度65μm的基材层和平均厚度10μm的粘合剂层的切割片)上，从而制作了实施例1的层叠体。实施例1的层叠体包括切割片和固定在粘合剂层上的半导体背面保护薄膜。
[实施例2～3·比较例1～2]
根据表1的配方表制作了半导体背面保护薄膜，除此以外，用与实施例1相同的方法制作了实施例2～3·比较例1～2的层叠体。
[评价1―固化后的拉伸储能模量E’]
在120℃下对半导体背面保护薄膜加热2小时，除去剥离衬垫。从加热后的半导体背面保护薄膜切取宽度10mm、长度22.5mm、厚度0.02mm的样品。使用Rheometrics Co.,Ltd.制造的动态粘弹性测定装置“Solid Analyzer RS A2”，在拉伸模式、频率1Hz、升温速度10℃/分钟、氮气氛下从0℃至100℃进行了动态粘弹性测定。在23℃～80℃的全部范围下拉伸储能模量为1GPa以上时判定为○。否则判定为×。结果示于表1。
[评价2―碎裂]
在70℃下将晶圆(经背面研磨处理过的直径8英寸厚度0.2mm的硅镜面晶圆)压接在层叠体的半导体背面保护薄膜上。通过对固定在层叠体上的晶圆进行切割而形成组合(包括硅芯片和固定在硅芯片上的切割后半导体背面保护薄膜)。如图7所示，以切口深度Z1(距硅芯片表面的深度)成为45μm的方式进行调整。以切口深度Z2成为切割带的粘合剂层厚度的1/2为止的方式调整切口深度Z2。
(晶圆磨削条件)
磨削装置：商品名“DFG-8560”DISCO Corporation制造
(粘贴条件)
粘贴装置：商品名“MA-3000III”NITTO SEIKI Co.,Ltd.制造
粘贴速度计：10mm/分钟
粘贴压力：0.15MPa
粘贴时的平台温度：70℃
(切割条件)
切割装置：商品名“DFD-6361”DISCO Corporation制造
切割环：“2-8-1”(DISCO Corporation制造)
切割速度：30mm/秒
切割刀片：
Z1；DISCO Corporation制造“203O-SE 27HCDD”
Z2；DISCO Corporation制造“203O-SE 27HCBB”
切割刀片旋转速度：
Z1；40000r/分钟
Z2；45000r/分钟
切割方式：阶梯切割(step cut)
芯片尺寸：2.0mm见方
从切割片上剥离组合。用显微镜(Keyence公司制造VHX500)观察硅芯片的切断面(4个切断面中最后被切断的面)，测定裂纹的深度。如图8所示，裂纹的深度是距半导体背面保护薄膜与硅芯片的界面的深度。相对于硅芯片的厚度100％，裂纹的深度低于10％时判定为◎。裂纹的深度低于30％时判定为○。裂纹的深度为30％以上时判定为×。结果示于表1。
[表1]
Figure BDA0001143181570000151

Claims (4)

1.一种层叠体，其包括：
切割片，所述切割片包含基材层和配置在所述基材层上的粘合剂层、和
配置在所述粘合剂层上的半导体背面保护薄膜，
固化后的所述半导体背面保护薄膜的拉伸储能模量在23℃～80℃全部范围下为1GPa以上，
固化后的所述半导体背面保护薄膜的23℃拉伸储能模量小于10Gpa，
固化后的所述半导体背面保护薄膜的80℃拉伸储能模量与固化后的所述半导体背面保护薄膜的23℃拉伸储能模量之比为0.3～1.0。
2.根据权利要求1所述的层叠体，其中，
所述半导体背面保护薄膜含有树脂成分，
所述树脂成分含有丙烯酸类树脂、环氧树脂和酚醛树脂，
所述树脂成分100重量％中的所述丙烯酸类树脂的含量为0.1重量％～30重量％。
3.一种联合体，其包括：
剥离衬垫、和
配置在所述剥离衬垫上的权利要求1所述的层叠体。
4.一种半导体装置的制造方法，其包括如下工序：
在权利要求1或2所述的层叠体的所述半导体背面保护薄膜上固定半导体晶圆的工序；
在所述层叠体的所述半导体背面保护薄膜上固定所述半导体晶圆的工序之后，使所述半导体背面保护薄膜固化的工序；
在使所述半导体背面保护薄膜固化的工序之后，通过对固定在所述半导体背面保护薄膜上的所述半导体晶圆进行切割，从而形成包含半导体芯片和固定在所述半导体芯片上的切割后半导体背面保护薄膜的组合的工序；和
从所述切割片上剥离所述组合的工序。
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