TWI710462B - 積層體及併合體、半導體裝置之製造方法 - Google Patents

積層體及併合體、半導體裝置之製造方法 Download PDF

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TWI710462B
TWI710462B TW105136616A TW105136616A TWI710462B TW I710462 B TWI710462 B TW I710462B TW 105136616 A TW105136616 A TW 105136616A TW 105136616 A TW105136616 A TW 105136616A TW I710462 B TWI710462 B TW I710462B
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protective film
semiconductor
backside protective
resin
weight
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TW105136616A
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TW201726421A (zh
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木村龍一
高本尚英
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日商日東電工股份有限公司
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Abstract

本發明提供一種能夠減少切割時於晶片側面產生之龜裂之積層體等。 本發明係關於一種包含切割片及半導體背面保護膜之積層體。切割片包含基材層及配置於基材層上之黏著劑層。半導體背面保護膜配置於黏著劑層上。硬化後之半導體背面保護膜之拉伸儲存模數於23℃～80℃全部範圍內為1 GPa以上。

Description

積層體及併合體、半導體裝置之製造方法
本發明係關於一種積層體、併合體及半導體裝置之製造方法。
半導體背面保護膜承擔抑制半導體晶圓之翹曲之作用、或保護背面之作用等。
業界已知有對半導體背面保護膜及切割片一體地進行處理之方法。例如為如下方法：於固定於切割片上之半導體背面保護膜固定半導體晶圓，藉由切割而形成包含晶片及切割後半導體背面保護膜之組合，並將組合自切割片剝離。
[先前技術文獻] [專利文獻]
[專利文獻1] 日本專利特開2010-199541號公報
於上述方法中，存在因刀片切割時之衝擊或摩擦而使晶片側面產生龜裂之情況。必須減少晶片側面之龜裂(側壁碎裂，sidewall chipping)。其原因在於：龜裂有使外觀變差，使可靠性降低之虞。
本發明之一目的在於提供一種能夠減少切割時於晶片側面產生之龜裂之積層體。本發明之一目的在於提供一種能夠減少切割時於晶片側面產生之龜裂之併合體。本發明之一目的在於提供一種能夠減少切割時於晶片 側面產生之龜裂之半導體裝置之製造方法。
本發明係關於一種包含切割片及半導體背面保護膜之積層體。切割片包含基材層及配置於基材層上之黏著劑層。半導體背面保護膜配置於黏著劑層上。硬化後之半導體背面保護膜之拉伸儲存模數於23℃~80℃全部範圍內為1GPa以上。由於為1GPa以上，故而能夠減少切割時於晶片側面產生之龜裂。
又，本發明還係關於一種包含剝離襯墊及配置於剝離襯墊上之積層體之併合體。
又，本發明係關於一種半導體裝置之製造方法，其包括：步驟(A)，其係於積層體之半導體背面保護膜固定半導體晶圓；步驟(B)，其係於步驟(A)之後使半導體背面保護膜硬化；步驟(C)，其係於步驟(B)之後，藉由對固定於半導體背面保護膜之半導體晶圓進行切割而形成組合；及步驟(D)，其係將組合自切割片剝離。組合包含半導體晶片及固定於半導體晶片之切割後半導體背面保護膜。本發明之半導體裝置之製造方法能夠減少切割時於晶片側面產生之龜裂。其原因在於：硬化後之半導體背面保護膜之拉伸儲存模數於23℃~80℃全部範圍內為1GPa以上，且於步驟(B)(使半導體背面保護膜硬化之步驟)之後對半導體晶圓進行切割。
1:併合體
4:半導體晶圓
5:組合
6:被黏著體
8:吸附台
11:半導體背面保護膜
12:切割片
13:剝離襯墊
41:半導體晶片
51:凸塊
61:導電材料
71:積層體
71a:積層體
71b:積層體
71c:積層體
71m:積層體
111:切割後半導體背面保護膜
121:基材層
122:黏著劑層
122A:第1部分
122B:第2部分
Z1:切口深度
Z2:切口深度
圖1係併合體之概略俯視圖。
圖2係併合體之一部分之概略剖視圖。
圖3係半導體裝置之製造步驟之概略剖視圖。
圖4係半導體裝置之製造步驟之概略剖視圖。
圖5係半導體裝置之製造步驟之概略剖視圖。
圖6係變化例1中之積層體之概略剖視圖。
圖7係積層體及固定於積層體上之晶圓之概略剖視圖，且示出切割刀片之切口深度。
圖8係實施例中之組合(包含矽晶片及切割後半導體背面保護膜)之側視圖，且示出裂紋之深度。
以下列舉實施形態詳細地說明本發明，但本發明不僅限定於該等實施形態。
[實施形態1]
(併合體1)
如圖1及圖2所示，併合體1包含剝離襯墊13及配置於剝離襯墊13上之積層體71a、71b、71c、......、71m(以下總稱為「積層體71」)。積層體71a與積層體71b之間之距離、積層體71b與積層體71c之間之距離、......積層體71l與積層體71m之間之距離固定。併合體1可製成卷狀。
積層體71包含切割片12及配置於切割片12上之半導體背面保護膜11。
切割片12包含基材層121及配置於基材層121上之黏著劑層122。黏著劑層122包含第1部分122A。第1部分122A經硬化。第1部分122A與半導體背面保護膜11接觸。黏著劑層122進而包含配置於第1部分122A周圍之第2部分122B。第2部分122B具有藉由能量線而硬化之性質。作為能量線，可列舉紫外線等。第2部分122B未與半導體背面保護膜11接觸。
(半導體背面保護膜11)
半導體背面保護膜11之兩面可由第1主面及與第1主面相對向之第2主面定義。第1主面與黏著劑層122接觸。第2主面與剝離襯墊13接觸。
半導體背面保護膜11為未硬化狀態。未硬化狀態包含半硬化狀態。較佳為半硬化狀態。
硬化後之半導體背面保護膜11之拉伸儲存模數於23℃~80℃全部範圍內為1GPa以上。由於為1GPa以上，故而能夠減少切割時於晶片側面產生之龜裂。較佳為2GPa以上。硬化後之半導體背面保護膜11之拉伸儲存模數可藉由丙烯酸系樹脂之含量、熱硬化性樹脂之含量等進行調整。再者，半導體背面保護膜11可藉由於120℃下加熱2小時而硬化。硬化後之半導體背面保護膜11之拉伸儲存模數藉由實施例中記載之方法進行測定。
硬化後之半導體背面保護膜11之23℃拉伸儲存模數較佳為2GPa以上，更佳為2.5GPa以上。硬化後之半導體背面保護膜11之23℃拉伸儲存模數之上限例如為50GPa、10GPa、7GPa、5GPa。另一方面，硬化後之半導體背面保護膜11之80℃拉伸儲存模數之上限例如為50GPa、10GPa、7GPa、5GPa。
硬化後之半導體背面保護膜11之80℃拉伸儲存模數相對於硬化後之半導體背面保護膜11之23℃拉伸儲存模數的比值(80℃拉伸儲存模數/23℃拉伸儲存模數)較佳為0.3以上，更佳為0.4以上。若未達0.3，則因相對於溫度之彈性模數變化較大而容易產生晶片側面之龜裂。比值(80℃拉伸儲存模數/23℃拉伸儲存模數)較佳為1.0以下，更佳為0.9以下，進而較佳為0.8以下。
半導體背面保護膜11帶有顏色。若帶有顏色，則存在可簡便地區別切割片12與半導體背面保護膜11之情況。半導體背面保護膜11較佳為例 如黑色、藍色、紅色等深色。尤佳為黑色。其原因在於：容易視認雷射標記。
深色意味著基本上L*a*b*表色系統中規定之L*成為60以下(0~60)[較佳為50以下(0~50)、進而較佳為40以下(0~40)]之深顏色。
另外，黑色意味著基本上L*a*b*表色系統中規定之L*為35以下(0~35)[較佳為30以下(0~30)、進而較佳為25以下(0~25)]之黑色系顏色。再者，黑色中，L*a*b*表色系統中規定之a*、b*可分別根據L*之值進行適當選擇。作為a*、b*，適宜為例如兩者均較佳為-10~10、更佳為-5~5、尤佳為-3~3之範圍(其中尤佳為0或幾乎為0)。
再者，L*a*b*表色系統中規定之L*、a*、b*係藉由使用色彩色差計(商品名「CR-200」MINOLTA公司製造；色彩色差計)進行測定而求出。再者，L*a*b*表色系統係國際照明委員會(CIE)於1976年推薦之色空間，意指被稱為CIE1976(L*a*b*)表色系統之色空間。另外，L*a*b*表色系統於日本工業規格中在JIS Z 8729中有所規定。
於85℃及85%RH之環境下放置168小時之時之半導體背面保護膜11之吸濕率較佳為1重量%以下、更佳為0.8重量%以下。藉由為1重量%以下，可提高雷射標記性。吸濕率可藉由無機填充劑之含量等進行控制。半導體背面保護膜11之吸濕率之測定方法如下上述。即，於85℃、85%RH之恆溫恆濕槽中將半導體背面保護膜11放置168小時，基於放置前後之重量減少率求出吸濕率。
將藉由使半導體背面保護膜11硬化而獲得之硬化物於85℃及85%RH之環境下放置168小時之時之吸濕率較佳為1重量%以下，更佳為0.8重量%以下。藉由為1重量%以下，可提高雷射標記性。吸濕率可藉由無機填 充劑之含量等進行控制。硬化物之吸濕率之測定方法如下上述。即，於85℃、85%RH之恆溫恆濕槽中將硬化物放置168小時，基於放置前後之重量減少率求出吸濕率。
半導體背面保護膜11中之揮發成分之比率越少越好。具體而言，加熱處理後之半導體背面保護膜11之重量減少率(重量減少量之比率)較佳為1重量%以下，更佳為0.8重量%以下。加熱處理之條件例如於250℃下為1小時。若為1重量%以下，則雷射標記性良好。能夠抑制回焊步驟中裂紋之產生。重量減少率係指對熱硬化後之半導體背面保護膜11於250℃下加熱1小時之時之值。
半導體背面保護膜11之未硬化狀態下之23℃之拉伸儲存模數較佳為1GPa以上。若為1GPa以上，則能夠防止半導體背面保護膜11附著於載帶上。23℃下之拉伸儲存模數之上限例如為50GPa。23℃下之拉伸儲存模數可藉由樹脂成分之種類、其含量、填充材料之種類、其含量等進行控制。拉伸儲存模數係使用Rheometrics公司製造之動態黏彈性測定裝置「Solid Analyzer RS A2」，利用拉伸模式，於試樣寬度：10mm、試樣長度：22.5mm、試樣厚度：0.2mm、且頻率：1Hz、升溫速度：10℃/分鐘、氮氣環境下、特定溫度(23℃)之條件下進行測定。
半導體背面保護膜11之可見光(波長：380nm~750nm)之透光率(可見光透過率)並無特別限制，例如較佳為20%以下(0%~20%)之範圍，更佳為10%以下(0%~10%)，尤佳為5%以下(0%~5%)。若半導體背面保護膜11之可見光透過率大於20%，則存在因透過光線導致對半導體晶片產生不良影響之虞。又，可見光透過率(%)可藉由半導體背面保護膜11之樹脂成分之種類、其含量、著色劑(顏料或染料等)之種類或其含量、無機填充 材料之含量等進行控制。
半導體背面保護膜11之可見光透過率(%)可以如下方式進行測定。即，製作厚度(平均厚度)20μm之半導體背面保護膜11個體。其次，對半導體背面保護膜11以特定之強度照射波長：380nm~750nm之可見光線[裝置：島津製作所製造之可見光產生裝置(商品名「ABSORPTION SPECTRO PHOTOMETER」)]，測定透過之可見光線之強度。進而，根據可見光線透過半導體背面保護膜11前後之強度變化，可求出可見光透過率之值。
半導體背面保護膜11較佳為含有著色劑。著色劑例如為染料、顏料。其中，較佳為染料，更佳為黑色染料。
半導體背面保護膜11中之著色劑之含量較佳為0.5重量%以上，更佳為1重量%以上，進而較佳為2重量%以上。半導體背面保護膜11中之著色劑之含量較佳為10重量%以下，更佳為8重量%以下，進而較佳為5重量%以下。
半導體背面保護膜11含有樹脂成分。例如為熱塑性樹脂、熱硬化性樹脂等。
作為熱塑性樹脂，例如可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍、6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(聚對苯二甲酸乙二酯)、PBT(聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。熱塑性樹脂可單獨使用或併用2種以上。其中，較佳為丙烯酸系樹脂。
於半導體背面保護膜11中，樹脂成分100重量%中之丙烯酸系樹脂之含量較佳為0.1重量%以上，更佳為1重量%以上，進而較佳為5重量%以上。樹脂成分100重量%中之丙烯酸系樹脂之含量較佳為30重量%以下，更佳為25重量%以下。若為30重量%以下，則能夠防止切割後半導體背面保護膜彼此密接。割斷性亦良好。
作為熱硬化性樹脂，可列舉：環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、熱硬化性聚醯亞胺樹脂等。熱硬化性樹脂可單獨使用或併用2種以上。作為熱硬化性樹脂，尤佳為腐蝕半導體晶片之離子性雜質等之含量較少之環氧樹脂。另外，作為環氧樹脂之硬化劑，可適當地使用酚樹脂。
作為環氧樹脂，並無特別限定，例如可使用雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚AF型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、茀型環氧樹脂、苯酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四酚基乙烷型環氧樹脂等二官能環氧樹脂、或多官能環氧樹脂、或乙內醯脲型環氧樹脂、異氰尿酸三縮水甘油酯型環氧樹脂或縮水甘油胺型環氧樹脂等環氧樹脂。
進而，酚樹脂作為環氧樹脂之硬化劑發揮作用，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚樹脂、可溶酚醛型酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。酚樹脂可單獨使用或併用2種以上。該等酚樹脂之中，尤佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於：能夠使半導體裝置之連接可靠性提高。
環氧樹脂與酚樹脂之調配比率例如較佳為以相對於環氧樹脂中之環氧基1當量，酚樹脂中之羥基成為0.5當量~2.0當量之方式進行調配。更佳為0.8當量~1.2當量。
樹脂成分100重量%中之環氧樹脂及酚樹脂之合計含量較佳為70重量%以上，更佳為75重量%以上。樹脂成分100重量%中之環氧樹脂及酚樹脂之合計含量較佳為99.9重量%以下，更佳為99重量%以下，進而較佳為95重量%以下。
半導體背面保護膜11可含有熱硬化促進觸媒。例如為胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等。
為了預先使半導體背面保護膜11進行一定程度之交聯，較佳為於製作時事先添加與聚合物之分子鏈末端之官能基等反應之多官能性化合物作為交聯劑。藉此，能夠提高於高溫下之接著特性，實現耐熱性之改善。
半導體背面保護膜11可含有填充劑。較佳為無機填充劑。無機填充劑例如為二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊錫等。填充劑可單獨使用或併用2種以上。其中，較佳為二氧化矽，尤佳為熔融二氧化矽。無機填充劑之平均粒徑較佳為於0.1μm~80μm之範圍內。無機填充劑之平均粒徑例如可藉由雷射繞射型粒徑分佈測定裝置進行測定。
半導體背面保護膜11中之填充劑之含量較佳為10重量%以上，更佳為20重量%以上，進而較佳為30重量%以上。半導體背面保護膜11中之填充劑之含量較佳為70重量%以下，更佳為60重量%以下，進而較佳為50重量%以下。
半導體背面保護膜11可適當含有其他添加劑。作為其他添加劑，例如可列舉：阻燃劑、矽烷偶合劑、離子捕捉劑、增量劑、抗老化劑、抗氧化劑、界面活性劑等。
半導體背面保護膜11之厚度較佳為2μm以上，更佳為4μm以上，進而較佳為6μm以上，尤佳為10μm以上。半導體背面保護膜11之厚度較佳為200μm以下，更佳為160μm以下，進而較佳為100μm以下，尤佳為80μm以下。
(切割片12)
切割片12包含基材層121及配置於基材層121上之黏著劑層122。
黏著劑層122之厚度較佳為3μm以上，更佳為5μm以上。黏著劑層122之厚度較佳為50μm以下，更佳為30μm以下。
黏著劑層122係由黏著劑形成。黏著劑例如為丙烯酸系黏著劑、橡膠系黏著劑。其中，較佳為丙烯酸系黏著劑。丙烯酸系黏著劑例如係將使用(甲基)丙烯酸烷基酯之1種或2種以上作為單體成分之丙烯酸系聚合物(均聚物或共聚物)作為基礎聚合物之丙烯酸系黏著劑。
基材121之厚度較佳為50μm~150μm。基材121較佳為具有使能量線透過之性質。
(剝離襯墊13)
剝離襯墊13例如為聚對苯二甲酸乙二酯(PET)膜。
(半導體裝置之製造方法)
如圖3所示，於積層體71之半導體背面保護膜11固定半導體晶圓4。具體而言，使用壓接輥等推壓構件，於50℃~100℃下將積層體71壓接於半導體晶圓4。半導體晶圓4之兩面可由電路面及與電路面相對向之背面 (亦被稱為非電路面、非電極形成面等)定義。半導體晶圓4例如為矽晶圓。
藉由對半導體背面保護膜11進行加熱而使半導體背面保護膜11硬化。例如，使切割片12面向加熱器，隔著切割片12對半導體背面保護膜11進行加熱。
如圖4所示，將切割片12固定於吸附台8上，切斷半導體晶圓4而形成組合5。即，藉由對半導體晶圓4進行切割而形成組合5。組合5包含半導體晶片41及固定於半導體晶片41之背面之切割後半導體背面保護膜111。半導體晶片41之兩面可由電路面及與電路面相對向之背面定義。組合5固定於切割片12上。
藉由針形件上推組合5，而將組合5自切割片12剝離。
如圖5所示，藉由覆晶接合方式(覆晶安裝方式)將組合5固定於被黏著體6。具體而言，以半導體晶片41之電路面與被黏著體6相對向之形態，將組合5固定於被黏著體6。例如，使半導體晶片41之凸塊51接觸被黏著體6之導電材料(焊料等)61，一面推壓一面使導電材料61熔融。組合5與被黏著體6之間有空隙。空隙之高度通常為30μm~300μm左右。固定後可進行空隙等之洗淨。
作為被黏著體6，可使用引線框架或電路基板(配線電路基板等)等基板。作為此種基板之材質，並無特別限定，可列舉陶瓷基板、或塑膠基板。作為塑膠基板，例如可列舉：環氧基板、雙馬來醯亞胺三□基板、聚醯亞胺基板等。
作為凸塊或導電材料之材質，並無特別限定，例如可列舉：錫-鉛系金屬材料、錫-銀系金屬材料、錫-銀-銅系金屬材料、錫-鋅系金屬材料、 錫-鋅-鉍系金屬材料等焊料類(合金)、金系金屬材料、銅系金屬材料等。再者，導電材料61於熔融時之溫度通常為260℃左右。若切割後半導體背面保護膜111含有環氧樹脂，則能夠耐受該溫度。
利用密封樹脂，將組合5與被黏著體6之間之空隙進行密封。通常藉由於175℃下加熱60秒~90秒而使密封樹脂硬化。
作為密封樹脂，只要係具有絕緣性之樹脂(絕緣樹脂)，則並無特別限制。作為密封樹脂，更佳為具有彈性之絕緣樹脂。作為密封樹脂，例如可列舉含有環氧樹脂之樹脂組合物等。另外，作為由含有環氧樹脂之樹脂組合物所獲得之密封樹脂，作為樹脂成分，除環氧樹脂以外，亦可含有除環氧樹脂以外之熱硬化性樹脂(酚樹脂等)、或熱塑性樹脂等。再者，作為酚樹脂，亦可用作環氧樹脂之硬化劑。密封樹脂之形狀為膜狀、片狀等。
根據以上之方法獲得之半導體裝置(覆晶安裝之半導體裝置)包含被黏著體6及固定於被黏著體6之組合5。
利用雷射能夠於半導體裝置之切割後半導體背面保護膜111上進行印字。再者，於利用雷射進行印字時，可利用公知之雷射標記裝置。又，作為雷射，可利用氣體雷射、固體雷射、液體雷射等。具體而言，作為氣體雷射，並無特別限制，可利用公知之氣體雷射，較佳為二氧化碳雷射(CO2雷射)、準分子雷射(ArF雷射、KrF雷射、XeCl雷射、XeF雷射等)。又，作為固體雷射，並無特別限制，可利用公知之固體雷射，較佳為YAG雷射(Nd：YAG雷射等)、YVO4雷射。
與以晶片接合安裝方式安裝之半導體裝置相比，利用覆晶安裝方式安裝之半導體裝置更薄且更小。因此，可較佳地作為各種電子機器、電子零件或其等之材料、構件使用。具體而言，作為利用覆晶安裝之半導體裝 置之電子機器，可列舉所謂「行動電話」、「PHS」、小型電腦(例如所謂「PDA」(攜帶型資訊終端)、所謂「筆記型電腦」、所謂「Netbook(商標)」、所謂「可穿戴式電腦」等)、「行動電話」及電腦經一體化而成之小型電子機器、所謂「Digital Camera(商標)」、所謂「數位攝錄影機」、小型電視、小型遊戲設備、小型數位影音播放器、所謂「電子記事本」、所謂「電子辭典」、所謂「電子書籍」用電子機器終端、小型數位型腕錶等移動型電子機器(可攜帶之電子機器)等，當然，亦可為除移動型以外(設置型等)之電子機器(例如，所謂「台式電腦」、薄型電視、錄影-播放用電子機器(硬碟記錄器、DVD播放器等)、投影儀、微型機械等)等。又，作為電子零件或電子機器、電子零件之材料、構件，例如可列舉所謂「CPU」之構件、各種記憶裝置(所謂「記憶體」、硬碟等)之構件等。
(變化例1)
黏著劑層122之第1部分122A具有藉由能量線而硬化之性質。黏著劑層122之第2部分122B亦具有藉由能量線而硬化之性質。於變化例1中，於形成組合5之步驟之後，對黏著劑層122照射能量線並拾取組合5。若照射能量線，則容易拾取組合5。
(變化例2)
黏著劑層122之第1部分122A藉由能量線而硬化。黏著劑層122之第2部分122B亦藉由能量線而硬化。
(變化例3)
如圖6所示，黏著劑層122之整個單面與半導體背面保護膜11接觸。
(其他)
變化例1~變化例3等可任意地加以組合。
如上上述，實施形態1之半導體裝置之製造方法包括：步驟(A)，其係於積層體71之半導體背面保護膜11固定半導體晶圓4；步驟(B)，其係於步驟(A)之後使半導體背面保護膜11硬化；步驟(C)，其係於步驟(B)之後，藉由對固定於半導體背面保護膜11上之半導體晶圓4進行切割而形成組合5；及步驟(D)，其係將組合5自切割片12剝離。
[實施例]
以下，例示性地對本發明之較佳實施例進行詳細說明。其中，該實施例中記載之材料或調配量等只要無特別限定性之記載，則主旨並非將本發明之範圍僅限定於該等實施例。
[實施例1]
(半導體背面保護膜之製作)
相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主成分之丙烯酸酯系聚合物(根上工業公司製造PARACRON W-197C)之固形物成分(溶劑除外之固形物成分)100重量份，將環氧樹脂(三菱化學公司製造jER YL980)300重量份、環氧樹脂(東都化成公司製造KI-3000)130重量份、酚樹脂(明和化成公司製造MEH7851-SS)460重量份、球狀二氧化矽(Admatechs公司製造SO-25R平均粒徑0.5μm之球狀二氧化矽)690重量份、染料(Orient Chemical Industry公司製造OIL BLACK BS)10重量份及觸媒(四國化成公司製造2PHZ)80重量份溶解於甲基乙基酮中，製備固形物成分濃度23.6重量%之樹脂組合物之溶液。將樹脂組合物之溶液塗佈於剝離襯墊(經聚矽氧脫模處理之厚度50μm之聚對苯二甲酸乙二酯膜)，於130℃下使其乾燥2分鐘。藉由以上之方法而獲得平均厚度為20μm之膜。自膜切出直徑330mm之圓盤狀膜(以下，於實施例中稱為「半導體背面保護膜」)。
(積層體之製作)
使用手壓輥，將半導體背面保護膜放於切割片(日東電工公司製造V-8-AR包含平均厚度65μm之基材層及平均厚度10μm之黏著劑層之切割片)上，藉此製作實施例1之積層體。實施例1之積層體包含切割片及固定於黏著劑層之半導體背面保護膜。
[實施例2~3、比較例1~2]
根據表1之調配表製作半導體背面保護膜，除此以外，利用與實施例1相同之方法製作實施例2~3、比較例1~2之積層體。
[評價1-硬化後之拉伸儲存模數E']
於120℃下對半導體背面保護膜加熱2小時，去除剝離襯墊。自加熱後之半導體背面保護膜切出寬度10mm、長度22.5mm、厚度0.02mm之試樣。使用Rheometrics公司製造之動態黏彈性測定裝置「Solid Analyzer RS A2」，於拉伸模式、頻率1Hz、升溫速度10℃/分鐘、氮氣環境下在0℃至100℃之範圍內進行動態黏彈性測定。於23℃~80℃之全部範圍內拉伸儲存模數為1GPa以上時判定為○。否則判定為×。將結果示於表1。
[評價2-碎裂]
於70℃下將晶圓(經背面研磨處理之直徑8英吋、厚度0.2mm之矽鏡面晶圓)壓接於積層體之半導體背面保護膜。藉由對固定於積層體上之晶圓進行切割而形成組合(包含矽晶片及固定於矽晶片上之切割後半導體背面保護膜)。如圖7所示，以切口深度Z1(距矽晶片表面之深度)成為45μm之方式進行調整。以切口深度Z2成為切割帶之黏著劑層厚度之1/2為止之方式調整切口深度Z2。
(晶圓研削條件)
研削裝置：商品名「DFG-8560」DISCO公司製造
(貼合條件)
貼附裝置：商品名「MA-3000III」日東精機公司製造
貼附速度計：10mm/分鐘
貼附壓力：0.15MPa
貼附時之平台溫度：70℃
(切割條件)
切割裝置：商品名「DFD-6361」DISCO公司製造
切割環：「2-8-1」(DISCO公司製造)
切割速度：30mm/秒
切割刀片：
Z1；DISCO公司製造「203O-SE 27HCDD」
Z2；DISCO公司製造「203O-SE 27HCBB」
切割刀片轉數：
Z1；40000r/分鐘
Z2；45000r/分鐘
切割方式：階狀切割(step cut)
晶片尺寸：2.0mm見方
將組合自切割片剝離。利用顯微鏡(Keyence公司製造VHX500)觀察矽晶片之切斷面(4個切斷面中最後被切斷之面)，測定裂紋之深度。如圖8所示，裂紋之深度係距半導體背面保護膜與矽晶片之界面之深度。相對於矽晶片之厚度100%，裂紋之深度未達10%時判定為◎。裂紋之深度未達30%時判定為○。裂紋之深度為30%以上時判定為×。將結果示於表1。
Figure 105136616-A0305-02-0018-1
1‧‧‧併合體
13‧‧‧剝離襯墊
71a‧‧‧積層體
71b‧‧‧積層體
71c‧‧‧積層體
71m‧‧‧積層體

Claims (4)

  1. 一種積層體，其包括：包含基材層及配置於上述基材層上之黏著劑層之切割片、及配置於上述黏著劑層上之半導體背面保護膜，且硬化後之上述半導體背面保護膜之拉伸儲存模數於23℃~80℃全部範圍內為1GPa以上，硬化後之上述半導體背面保護膜之80℃拉伸儲存模數相對於硬化後之上述半導體背面保護膜之23℃拉伸儲存模數的比值為0.3~1.0，硬化後之上述半導體背面保護膜之23℃拉伸儲存模數為7GPa以下。
  2. 如請求項1之積層體，其中上述半導體背面保護膜包含樹脂成分，且上述樹脂成分含有丙烯酸系樹脂、環氧樹脂及酚樹脂，上述樹脂成分100重量%中之上述丙烯酸系樹脂之含量為0.1重量%~30重量%。
  3. 一種併合體，其包含：剝離襯墊、及如請求項1之積層體，上述積層體之上述半導體背面保護膜側之面配置於上述剝離襯墊上。
  4. 一種半導體裝置之製造方法，其包括如下步驟：於如請求項1或2之積層體之上述半導體背面保護膜固定半導體晶圓之步驟；於上述積層體之上述半導體背面保護膜固定上述半導體晶圓之步驟之後，使上述半導體背面保護膜硬化之步驟； 於使上述半導體背面保護膜硬化之步驟之後，藉由對固定於上述半導體背面保護膜之上述半導體晶圓進行切割，而形成包含半導體晶片及固定於上述半導體晶片之切割後半導體背面保護膜之組合之步驟；及將上述組合自上述切割片剝離之步驟。
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