CN106684065A - Novel integrated Mini rectifier bridge structure and fabrication process thereof - Google Patents
Novel integrated Mini rectifier bridge structure and fabrication process thereof Download PDFInfo
- Publication number
- CN106684065A CN106684065A CN201610808064.3A CN201610808064A CN106684065A CN 106684065 A CN106684065 A CN 106684065A CN 201610808064 A CN201610808064 A CN 201610808064A CN 106684065 A CN106684065 A CN 106684065A
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- Prior art keywords
- lead frame
- chip
- backlight unit
- rectifier bridge
- diode chip
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title abstract description 7
- 239000004033 plastic Substances 0.000 claims abstract description 11
- 238000010276 construction Methods 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 210000003205 muscle Anatomy 0.000 claims description 2
- 238000003466 welding Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/73265—Layer and wire connectors
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- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Rectifiers (AREA)
Abstract
The invention provides a novel integrated Mini rectifier bridge structure and a fabrication process thereof. The novel integrated Mini rectifier bridge structure comprises a plastic package body, wherein four lead frames in a same plane are packaged in the plastic package body; a first lead frame and a third lead frame are fixedly arranged on a same carrier as AC pins and a second lead frame and a fourth lead frame are fixedly arranged on the same carrier as positive and negative pins; the second lead frame is fixedly provided with two diode chips and the top surfaces are P-type and are connected with the first lead frame and the third lead frame through wires respectively; and the fourth lead frame is fixedly provided with two diode chips and the top surfaces are N-type and are connected with the first lead frame and the third lead frame through wires respectively. The invention further provides the fabrication process of the novel integrated Mini rectifier bridge structure. The novel integrated Mini rectifier bridge structure is compact, small in volume and different from an existing technique in process. The novel integrated Mini rectifier bridge structure is suitable for any PCB.
Description
Technical field
The invention belongs to field of electronic devices, specifically a kind of integrated form Mini rectifier bridge new constructions.The present invention is also
There is provided the manufacture craft of integrated form Mini rectifier bridge new constructions.
Background technology
With the continuous development of electron trade, the application of rectifier bridge device also constantly extends.But electricity is required in prior art
Sub- product is increasingly miniaturized, therefore also requires that the various modules for constituting electronic device are also increasingly miniaturized.And in prior art
Rectifier bridge encapsulating structure adopt bilevel structure mostly, wherein two diode chip for backlight unit of per layer of difference, cause final envelope
Dress thickness is larger, busy line board space, is difficult small-sized encapsulated, radiates not good enough.
In order to overcome above-mentioned defect, prior art to improve the encapsulating structure of rectifier bridge, as shown in Figure 1：Bag
Include first to fourth diode chip for backlight unit, four chips and be generally aligned in the same plane interior first to fourth lead frame, four leads
Framework, wherein the first diode chip for backlight unit, the second diode chip for backlight unit are divided on first, second lead frame, in addition the three, the 4th
Jointly on the 4th lead frame, the first diode chip for backlight unit, the pad of the second diode chip for backlight unit pass through respectively diode chip for backlight unit
Wire connects the 3rd lead frame, and the 3rd diode chip for backlight unit connects the first lead frame by wire, and the 4th diode chip for backlight unit leads to
Cross wire and connect the second lead frame.The rectification pontic of the overall relatively upper and lower double-layer structure of rectifier bridge of such set-up mode order
Product is less, and thickness is also thinner, but the rectifier bridge of this kind of encapsulating structure also has following defect：
Four chips set up separately on three lead frames, and layout is still not compact enough.
Additionally, the welding procedure of rectifier bridge is one side welding in prior art so that what four diode chip for backlight unit were constituted
Rectification bridge construction spatially has to stack, and causes overall rectifier bridge volume big.
The content of the invention
The technical problem to be solved in the present invention, is to provide a kind of integrated form Mini rectifier bridge new constructions, and described one kind is integrated
Formula Mini rectifier bridge new construction is more compact in structure, and shared volume is less.
To solve above-mentioned technical problem, the technical solution used in the present invention is：
A kind of integrated form Mini rectifier bridge new constructions, it includes plastic-sealed body, and the encapsulation is packaged with vivo in same plane
The first lead frame, the second lead frame, the 3rd lead frame, the 4th lead frame；
First lead frame and the 3rd lead frame are fixedly arranged in identical carrier, used as exchange pin, the second lead frame
It is fixedly arranged in identical carrier with the 4th lead frame, as positive and negative electrode pin；
Two diode chip for backlight unit are fixed with second lead frame, top surface is p-type, connect first by wire respectively
Lead frame, the 3rd lead frame；
Two diode chip for backlight unit are fixed with 4th lead frame, top surface is N-type, connect first by wire respectively
Lead frame, the 3rd lead frame.
As restriction：The carrier of first lead frame and the 3rd lead frame is all packaged in plastic packaging body, and second
The top half of the carrier of lead frame and the 4th lead frame is packaged in plastic packaging body and carrier the latter half exposes to plastic packaging
Body.
Second restriction：Diode chip for backlight unit on second lead frame and the 4th lead frame passes through diode bottom
The bonding material that face is arranged is fixed on corresponding lead frame, and diode chip for backlight unit is electrically connected respectively with the lead frame being located
Connect, the bonding material is conducting resinl or slicken solder.
The third restriction：The wire is copper cash, sets respectively on diode chip for backlight unit and the first, the 3rd lead frame
There are pad, the pad on one end connection diode chip for backlight unit of the copper cash, the pad on other end connecting lead wire framework.
As the restriction to diode chip for backlight unit in the present invention：All diode chip for backlight unit are GPP diode chip for backlight unit.
As the restriction to plastic-sealed body in the present invention：The plastic-sealed body is the housing with cavity that epoxy resin is constituted.
Present invention also offers a kind of manufacture craft of above-mentioned integrated form Mini rectifier bridge new constructions, including what is carried out successively
Following steps：
1）The test of quality is carried out to full wafer silicon chip, and the bad piece for detecting is marked；
2）Silicon chip bottom surface is affixed on blue film, fritter one by one is divided into, and the bad chip that front marks is chosen；
3）By step 2）In the top surface of good chip stick blue film, and chip is turned upside down, the blue film before removing on bottom surface；
4）Using machine crawl step 3）In chip, and directly the bottom surface of chip is welded on base；
5）Wire bonding gold thread couples together the pad of the pin of lead frame and chip；
6）With epoxy resin by diode chip for backlight unit and for carrying the lead frame of chip plastic packaging together, chip is protected, it
Laser typewriting afterwards；
7）By step 6）Company's muscle between middle pin cuts, and then carries out pin forming, obtains a kind of integrated form Mini rectifier bridges
New construction；
8）Finally to step 7）In a kind of integrated form Mini rectifier bridge new constructions tested, and good product is compiled into bag.
As a result of above-mentioned technical scheme, compared with prior art, acquired technological progress is the present invention：
（1）All diode chip for backlight unit and lead frame of the present invention are respectively positioned on same plane, the envelope of the overall rectification bridge construction of order
Dress thickness is less, and volume is also less, and layout is compacter；
（2）Two diode chip for backlight unit polarity on the same lead frame of the present invention are towards consistent, convenient production；
（3）The present invention exposes to modeling as the second lead frame of positive and negative electrode and the carrier the latter half of the 4th lead frame frame
Feng Ti, directly contacts with pcb board when mounted, strengthens heat conduction, and simplifies installation procedure；
（4）The plastic-sealed body of the present invention is made using epoxy resin, and thermal diffusivity is strong, and the radiating to whole rectification bridge construction has promotion
Effect.
In sum, present configuration is compact, small volume, easy to install and use.
The present invention is applied to any PCB.
The present invention is described in further detail below in conjunction with specific embodiment.
Description of the drawings
Fig. 1 is the structural representation of Mini rectifier bridges in prior art；
Fig. 2 is the top view of the embodiment of the present invention 1；
Fig. 3 is the front view of the embodiment of the present invention 1；
Fig. 4 is the left view of the embodiment of the present invention 1；
Fig. 5 is the upward view of the embodiment of the present invention 1.
In figure：1-1, the first lead frame, 1-2, the second lead frame, 1-3, the 3rd lead frame, 1-4, the 4th lead
Framework, 2-1, the first core diode chip, 2-2, the second diode chip for backlight unit, 2-3, the 3rd diode chip for backlight unit, 2-4, the 4th diode
Chip, 3 bonding materials, 4, wire, 5, pad, 6, plastic-sealed body.
Specific embodiment
A kind of integrated form Mini rectifier bridge new constructions of embodiment 1
A kind of integrated form Mini rectifier bridge new constructions are present embodiments provided, as shown in Fig. 2,3,4,5, it includes：
Plastic-sealed body 6, the packaging body 6 is the housing with cavity that epoxy resin is constituted, and is packaged with the cavity of plastic-sealed body 6
First lead frame 1-1, the second lead frame 1-2, the 3rd lead frame 1-3, the 4th lead frame 1-4, and all of lead
Framework is in same plane.In order to the lead frame for making the present embodiment has installation foundation, the first lead frame 1-1
It is fixedly arranged in identical carrier as pin is exchanged with the 3rd lead frame 1-3, the second lead frame 1-2 and the 4th lead frame 1-
4 are fixedly arranged in identical carrier as positive and negative electrode pin, and the carrier whole of the first lead frame 1-1 and the 3rd lead frame 1-3
It is packaged in the cavity of plastic-sealed body 6, the first half of the second lead frame 1-2 and the 4th lead frame 1-4 carriers is packaged in plastic packaging
The cavity of body 6 is interior and carrier the latter half exposes to plastic-sealed body 6 and arranges.
The present embodiment adopts GPP diode chip for backlight unit as the diode chip for backlight unit of core, and the second lead frame is fixedly arranged on respectively
On 1-2 and the 4th lead frame 1-4, and two two are fixed with respectively on the second lead frame 1-2 and the 4th lead frame 1-4
Pole pipe chip, wherein the diode chip for backlight unit top surface being fixedly arranged on the second lead frame 1-2 is p-type, is fixedly arranged on the 4th lead frame
Diode chip for backlight unit top surface on 1-4 is N-type.It is specifically configured to：It is fixedly installed by bonding material 3 on second lead frame 1-2
First diode chip for backlight unit 2-1 and the second diode chip for backlight unit 2-2, is fixedly installed on the 4th lead frame 1-4 by bonding material 3
Three diode chip for backlight unit 2-3 and the 4th diode chip for backlight unit 2-4, and the first diode chip for backlight unit 2-1, the second diode chip for backlight unit 2-2 and
Two lead frame 1-2 are electrically connected, and the 3rd diode chip for backlight unit 2-3, the 4th diode chip for backlight unit 2-4 and the 4th lead frame 1-4 are electrically connected
Connect, in order to realize the electrical connection of each chip and respective lead framework, the bonding material 3 in the present embodiment adopts prior art
In conducting resinl or slicken solder.
And in order to make each chip be connected to form annexation with the first lead frame 1-1 and the 3rd lead frame 1-3,
The first diode chip for backlight unit 2-1, the second diode chip for backlight unit 2-2 in the present embodiment is respectively by wire 4 and the first lead frame respectively
The lead frame 1-3 of frame 1-1 the 3rd are connected, and the 3rd diode chip for backlight unit 2-3 and the 4th diode chip for backlight unit 2-4 then pass through 4 points of wire
It is not connected with the first lead frame 1-1, the 3rd lead frame 1-3, and the wire in the present embodiment is splendid using electric conductivity
Copper cash, while pad 5 is respectively equipped with diode chip for backlight unit and the first lead frame 1-1, the 3rd lead frame 1-3, it is described
Pad 5 on one end connection diode chip for backlight unit of copper cash, the pad 5 on other end connecting lead wire framework.
A kind of manufacture craft of integrated form Mini rectifier bridge new constructions of embodiment 2
A kind of manufacture craft of integrated form Mini rectifier bridge new constructions is present embodiments provided, for making described in embodiment 1
A kind of integrated form Mini rectifier bridge new constructions, it is comprised the following steps：
1）The test of quality is carried out to full wafer silicon chip, and the bad piece for detecting is marked；
Bad piece can be marked with magnetic ink when being marked to bad piece in this step, it is also possible to set up using computer
The computer graphical of one chip position and test structure, it is using computer that bad chip is enterprising in the coordinate of computer graphical
Line flag；
2）Silicon chip bottom surface is affixed on blue film, fritter one by one is divided into, and the bad chip that front marks is chosen；
If step 1）In use directly bad piece be marked with magnetic ink, then it is during scribing that silicon chip is complete in this step
Scratch entirely；And if step 1）The mark that middle utilization computer is carried out to chip, then in this step using scribing depth four/
/ 1 to three scribing process, so not exclusively scratches the reliability that can be improved when turning over film；
3）By step 2）In the top surface of good chip stick blue film, and chip is turned upside down, the blue film before removing on bottom surface；
If step 1）The mark that middle utilization computer is carried out to chip, then need for bad chip to utilize magnetic in this step
Ink gets mark ready, then sliver, and takes out bad chip with machine, obtains GPP diodes that top surface can be welded and good
Chip；
4）Using machine crawl step 3）In chip, and directly the bottom surface of chip is welded on base；
Need thimble below up to push up good chip from blue film in this step, at the same the vacuum slot of machine by chip up
Inhale, crawl step 3）The diode chip for backlight unit of top surface welding, is then welded on the top surface of chip on the base of lead frame；
5）Wire bonding copper cash couples together the pad of the pin of lead frame and chip；
6）With epoxy resin by diode chip for backlight unit and for carrying the lead frame of chip plastic packaging together, chip is protected, it
Laser typewriting afterwards；
7）By step 6）Pin between middle silver paste cuts, and then carries out pin forming, obtains a kind of integrated form Mini rectifier bridges
New construction；
8）Finally to step 7）In a kind of integrated form Mini rectifier bridge new constructions tested, and good product is compiled into bag.
Claims (9)
1. a kind of integrated form Mini rectifier bridge new constructions, it is characterised in that：It includes plastic-sealed body, and the encapsulation is packaged with vivo place
The first lead frame, the second lead frame in same plane, the 3rd lead frame, the 4th lead frame；
First lead frame and the 3rd lead frame are fixedly arranged in identical carrier, used as exchange pin, the second lead frame
It is fixedly arranged in identical carrier with the 4th lead frame, as positive and negative electrode pin；
Two diode chip for backlight unit are fixed with second lead frame, top surface is p-type, connect first by wire respectively
Lead frame, the 3rd lead frame；
Two diode chip for backlight unit are fixed with 4th lead frame, top surface is N-type, respectively the first lead are connected by wire
Framework, the 3rd lead frame.
2. a kind of integrated form Mini rectifier bridge new constructions according to claim 1, it is characterised in that：First lead frame
The carrier of frame and the 3rd lead frame is all packaged in plastic packaging body, and the second lead frame is upper with the carrier of the 4th lead frame
Half part is packaged in plastic packaging body and carrier the latter half exposes to plastic-sealed body.
3. a kind of integrated form Mini rectifier bridge new constructions according to claim 1 and 2, it is characterised in that：Described second draws
Wire frame is fixed at corresponding with the bonding material that the diode chip for backlight unit on the 4th lead frame is arranged by diode bottom surface
On lead frame, and diode chip for backlight unit is electrically connected respectively with the lead frame being located, and the bonding material is conducting resinl or slicken solder.
4. a kind of integrated form Mini rectifier bridge new constructions according to claim 1 and 2, it is characterised in that：The wire is equal
For copper cash, pad is respectively equipped with diode chip for backlight unit and the first, the 3rd lead frame, one end of the copper cash connects two poles
Pad on die, the pad on other end connecting lead wire framework.
5. a kind of integrated form Mini rectifier bridge new constructions according to claim 3, it is characterised in that：The wire is copper
Line, is respectively equipped with pad, one end connection diode core of the copper cash on diode chip for backlight unit and the first, the 3rd lead frame
Pad on piece, the pad on other end connecting lead wire framework.
6. a kind of integrated form Mini rectifier bridge new constructions according to any one in claim 1,2 or 5, its feature exists
In：All diode chip for backlight unit are GPP diode chip for backlight unit, and the plastic-sealed body is the shell with cavity that epoxy resin is constituted
Body.
7. a kind of integrated form Mini rectifier bridge new constructions according to claim 3, it is characterised in that：All diodes
Chip is GPP diode chip for backlight unit, and the plastic-sealed body is the housing with cavity that epoxy resin is constituted.
8. a kind of integrated form Mini rectifier bridge new constructions according to claim 4, it is characterised in that：All diodes
Chip is GPP diode chip for backlight unit, and the plastic-sealed body is the housing with cavity that epoxy resin is constituted.
9. a kind of as claimed in any of claims 1 to 8 in one of claims a kind of manufacture craft of integrated form Mini rectifier bridge new constructions,
It is characterized in that：Including the following steps for carrying out successively：
1）The test of quality is carried out to full wafer silicon chip, and the bad piece for detecting is marked；
2）Silicon chip bottom surface is affixed on blue film, fritter one by one is divided into, and the bad chip that front marks is chosen；
3）By step 2）In the top surface of good chip stick blue film, and chip is turned upside down, the blue film before removing on bottom surface；
4）Using machine crawl step 3）In chip, and directly the bottom surface of chip is welded on base；
5）Wire bonding copper cash couples together the pad of the pin of lead frame and chip；
6）With epoxy resin by diode chip for backlight unit and for carrying the lead frame of chip plastic packaging together, chip is protected, it
Laser typewriting afterwards；
7）By step 6）Company's muscle between middle pin cuts, and then carries out pin forming, obtains a kind of integrated form Mini rectifier bridges
New construction；
8）Finally to step 7）In a kind of integrated form Mini rectifier bridge new constructions tested, and good product is compiled into bag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610808064.3A CN106684065A (en) | 2016-09-07 | 2016-09-07 | Novel integrated Mini rectifier bridge structure and fabrication process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610808064.3A CN106684065A (en) | 2016-09-07 | 2016-09-07 | Novel integrated Mini rectifier bridge structure and fabrication process thereof |
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| Publication Number | Publication Date |
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| CN106684065A true CN106684065A (en) | 2017-05-17 |
Family
ID=58840285
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610808064.3A Pending CN106684065A (en) | 2016-09-07 | 2016-09-07 | Novel integrated Mini rectifier bridge structure and fabrication process thereof |
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| Country | Link |
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| CN (1) | CN106684065A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110010599A (en) * | 2019-04-25 | 2019-07-12 | 广东美的制冷设备有限公司 | Highly integrated intelligent power module and preparation method thereof and air conditioner |
| WO2019227570A1 (en) * | 2018-05-31 | 2019-12-05 | 苏州同泰新能源科技有限公司 | Electronic brake flywheel disc |
| CN110600450A (en) * | 2019-10-25 | 2019-12-20 | 山东晶导微电子股份有限公司 | Lead frame for arranging chip, packaging body and power supply module |
| CN116666344A (en) * | 2023-07-26 | 2023-08-29 | 深圳市锐骏半导体股份有限公司 | Frame structure |
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