CN106663665A - 多层冷却装置 - Google Patents

多层冷却装置 Download PDF

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CN106663665A
CN106663665A CN201580048095.7A CN201580048095A CN106663665A CN 106663665 A CN106663665 A CN 106663665A CN 201580048095 A CN201580048095 A CN 201580048095A CN 106663665 A CN106663665 A CN 106663665A
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metallization
carrier body
tungsten
sintering
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A.多恩
R.迪尔施
R.莱奈斯
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Ceramtec GmbH
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Abstract

为了更多空间可提供给其它电路元件（线圈、电容器）和/或可以安放对于屏蔽电路所必需的附加的电路元件而提出，金属化区域相叠地布置在至少两个金属化层内，其中载体本体（1）具有如下表面，在所述表面上，烧结的金属化区域被布置在第一金属化层内，所述烧结的金属化区域承载电子器件和/或被结构化成，使得所述金属化层形成电阻或者线圈并且所述金属化区域与所述器件和/或所形成的电阻或线圈一起被陶瓷板（5）覆盖，并且可选地在所述陶瓷板上，所述烧结的金属化区域中的其它金属化区域被布置在其它的金属化层内并且分别用陶瓷板来覆盖，并且在最上方的、远离所述冷却元件的陶瓷板（5）上，烧结的金属化区域布置在用于容纳电路元件的金属化层内。

Description

多层冷却装置
技术领域
本发明涉及一种具有冷却元件并且具有烧结的金属化区域的陶瓷载体本体。
背景技术
由Al2O3或者AlN构成的、被气体或液体冷却的陶瓷载体本体在表面上承载结构化的金属化部（Cu或者Cu-Ni-Au，或者W-Ni-Au），电路构件可以直接被焊接到所述金属化部上。随着在功率构件中小型化越来越多或者开关频率越来越高，在载体表面上的构件的紧邻处可能需要其它的电路元件（如屏蔽物、线圈、电容器）。由于在此期间升高的开关频率而产生高频干扰辐射，为了避免EMV问题，必须花费高地屏蔽所述高频干扰辐射。
发明内容
因此，本发明所基于的任务在于，研发一种具有冷却元件并且具有烧结的金属化区域的陶瓷载体本体，使得更多空间可提供给其它电路元件（线圈、电容器）和/或可以安放为了屏蔽电路所必需的附加的电路元件。
按照本发明，该任务通过在权利要求1中所描述的载体本体来解决。
按照本发明的陶瓷载体本体的特征在于冷却元件和烧结的金属化区域，所述烧结的金属化区域相叠地被布置在至少两个金属化层内，其中所述载体本体具有如下表面，在所述表面上，烧结的金属化区域被布置在第一金属化层内，所述烧结的金属化区域承载电子器件和/或被结构化成，使得所述金属化区域形成电阻或者线圈并且所述金属化区域与所述器件和/或所形成的电阻或线圈一起被陶瓷板覆盖，并且可选地在所述陶瓷板上，所述烧结的金属化区域中的其它金属化区域被布置在其它金属化层内并且分别用陶瓷板来覆盖，并且在最上方的、远离冷却元件的陶瓷板上，烧结的金属化区域被布置在用于容纳电路元件的金属化层内。
因此，为了可以在有限的空间上安放其它电路元件（线圈、电容器）或者对于屏蔽电路所必需的附加的电路元件，按照本发明，在电路层与冷却层（鳍片或者具有液体冷却介质的层）之间引入至少一个附加的金属化层。所述被覆盖的金属化部可以由与外部的电路层相同的材料构成，或者也可以由另外的、优选地更高熔点的金属构成。在外部的金属元件与内部中的金属元件之间的接触可以通过通孔（冲压、激光钻孔）或者通过被拉出直至陶瓷边缘的并且在外部连接的结构来建立。此外，可以结构化所述内层。所述内层改善了干扰特性并且可以容纳电子构件。通过适当的结构化和金属选择可以实现电阻和线圈。所述内层可以与覆盖层一起构造电容，所述电容通过几何形状和间距来确定。
冷却元件或者是在载体本体上的鳍片或者是在载体本体内部中的冷却通道。
在优选的发明改进方案中，附加的一个或多个金属化层承载电子器件和/或被结构化成，使得所述附加的一个或多个金属化层形成电阻或线圈。在此，器件被嵌入到金属化层中，使得所有都可以用陶瓷板来覆盖。如果金属化部或金属化区域被结构化成，使得所述金属化部或金属化区域形成电阻或线圈，那么所述金属化部形成如下层，陶瓷板可以轻易地被放置到所述层上。
所述载体本体优选地由陶瓷材料、氧化铝Al2O3或者氮化铝ALN构成。两种材料具有良好的导热性并且不导电。所述金属化区域可以用这些材料轻易地烧结。
用于容纳电路元件的最上方的金属化层优选地由铜构成，并且内部金属化层由钨构成。
按照本发明的用于制造按照本发明的载体本体的方法的特征在于，为了在用冷却元件制造陶瓷载体本体之后制造金属化层，
a) 所述载体本体的表面的部分区域用钨-玻璃膏以丝网印刷来涂层，其中在至少一个部位上按压所述钨-玻璃膏直至到所述载体本体的外棱边上，
b) 紧接着，没有被涂层的表面用绝缘膏来印刷，此后使所述钨-玻璃膏和所述绝缘膏脱粘，
c) 紧接着，将磨光的陶瓷板放到脱粘的膏上，
d) 并且接着可选地重复方法步骤a、b和c，其中然后印刷陶瓷板，并且
e) 最后，为了用另一丝网印刷步骤用铜膏将侧面金属化部建立到载体本体的侧面上，将内部的钨金属化部与最上方的铜金属化部连接。
所述各个方法步骤一般都是公知的。替代或者附加于在金属化层之间的侧面金属化部，也可以引入通孔用于将内部钨金属化部与最上方的铜金属化部进行电连接。
示例：
具有鳍片10（参见图1）的由AlN构成的具有40*40*30mm大小的磨光的冷却体1在表面上用钨-玻璃膏2以丝网印刷的方式以电容器形式涂层15μm高。利用与此互补的丝网，用绝缘膏3来印刷余下的表面（包含玻璃或者与也构成冷却体1的陶瓷相同的陶瓷）。所述钨-玻璃膏2在部位4处被按压直至到冷却体1的外棱边上。
钨-玻璃膏2和绝缘膏3在500℃的情况下脱粘。具有尺寸为40*40*2mm的由AlN构成的磨光的陶瓷板5被放置到冷却体1上、或被放置到脱粘的钨-玻璃膏2和绝缘膏3上并且在1300℃的情况下在湿的氮气-氢气中被烙上所印刷的冷却体1。在此，两个陶瓷部分、即冷却体1连带其鳍片10与陶瓷板5相连接。于是，烧过的钨-玻璃膏2形成由钨构成的中间层或金属化部。所述中间层也被称作金属化区域并且形成金属化层。
用铜膏6将题材或金属化部印刷到由AlN构成的板5的上侧上。铜膏6的层厚度优选地在15和300μm之间。铜印刷或铜膏6伸展直至到板5的外棱边7上，并且以利用铜膏6到侧面上的另一丝网印刷步骤的方式与中间层的钨连接。
在910℃的情况下，在氮气中烘烤铜膏6或铜金属化部。
因此，本发明也描述了一种具有冷却元件和电路层的陶瓷载体本体，所述电路层由用于容纳电路元件的烧结的金属化区域构成，其中在所述电路层与所述载体本体之间布置有至少一个具有烧结的金属化部的附加的金属化层，其中所述附加的金属化部中的每个都被陶瓷板覆盖，并且所述电路层的金属化部与最上方的、远离冷却元件的陶瓷板烧结，并且所述金属化层的烧结的金属化部与所述电路层的金属化部通过通孔或者通过被拉出直至陶瓷边缘的并且在外部电连接的导电结构相互连接。

Claims (7)

1.具有冷却元件并且具有烧结的金属化区域的陶瓷载体本体（1），所述烧结的金属化区域相叠地布置在至少两个金属化层内，其中所述载体本体（1）具有如下表面，在所述表面上，烧结的金属化区域布置在第一金属化层内，所述烧结的金属化区域承载电子器件和/或被结构化成，使得所述金属化区域形成电阻或者线圈并且所述金属化区域与所述器件和/或所形成的电阻或线圈一起被陶瓷板（5）覆盖，并且可选地在所述陶瓷板上，所述烧结的金属化区域中的其它金属化区域布置在其它的金属化层内并且分别用陶瓷板来覆盖，并且在最上方的、远离所述冷却元件的陶瓷板（5）上，烧结的金属化区域布置在用于容纳电路元件的金属化层内。
2.根据权利要求1所述的载体本体，其特征在于，所述冷却元件是在所述载体本体（1）上的鳍片（10）或者是在所述载体本体（1）内部中的冷却通道。
3.根据权利要求1或2所述的载体本体，其特征在于，一个或多个附加的金属化层承载电子器件和/或被结构化成，使得所述一个或多个附加的金属化层形成电阻或者线圈。
4.根据权利要求1至4之一所述的载体本体，其特征在于，所述载体本体由陶瓷材料、氧化铝Al2O3或者氮化铝ALN构成。
5.根据权利要求1至5之一所述的载体本体，其特征在于，最上方的用于容纳电路元件的金属化层由铜构成，并且其它内部的金属化层由钨构成。
6.用于制造根据权利要求1至4之一所述的载体本体的方法，其特征在于，为了在用冷却元件制造陶瓷载体本体（1）之后制造金属化层，
a) 所述载体本体的表面的部分区域用钨-玻璃膏以丝网印刷来涂层，其中在至少一个部位上按压所述钨-玻璃膏直至到所述载体本体的外棱边上，
b) 紧接着，没有涂层的表面用绝缘膏来印刷，此后使所述钨-玻璃膏和所述绝缘膏脱粘，
c) 紧接着，将磨光的陶瓷板放到脱粘的膏上，
d) 并且接着可选地重复方法步骤a、b和c，其中然后印刷陶瓷板，并且
e) 最后，为了用另一丝网印刷步骤用铜膏将侧面金属化部建立到载体本体的侧面上，将内部的钨金属化部与最上方的铜金属化部连接。
7.根据权利要求6所述的方法，其特征在于，替代或者附加于在所述金属化层之间的侧面金属化部，引入通孔用于将内部钨金属化部与最上方的铜金属化部进行电连接。
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