CN106555220B - A kind of semiconductor crystal wafer electroplating clamp and clamp method - Google Patents
A kind of semiconductor crystal wafer electroplating clamp and clamp method Download PDFInfo
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- CN106555220B CN106555220B CN201610991074.5A CN201610991074A CN106555220B CN 106555220 B CN106555220 B CN 106555220B CN 201610991074 A CN201610991074 A CN 201610991074A CN 106555220 B CN106555220 B CN 106555220B
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a kind of semiconductor crystal wafer electroplating clamp, for clamping semiconductor crystal wafer, including external connection structure, agent structure and locking mechanism；The external connection structure is fixed on the body construction by trip bolt；The fixture back plate of the agent structure is equipped with the wafer putting hole for placing semiconductor crystal wafer, and the fixture foreboard is equipped with the cushion pad groove for placing cushion pad, is additionally provided with through hole on fixture foreboard, the conductive sheet is clipped between fixture foreboard and fixture back plate；Compression cushion block on the retaining mechanism is arranged in wafer putting hole, and semiconductor crystal wafer is pressed on conductive sheet under the action of knob, conductive sheet is pressed on cushion pad.Semiconductor crystal wafer electroplating clamp provided by the invention, clever structure, clamping is reliable, ensure that the uniformity of semiconductor crystal wafer clamping, the effective guarantee electroplating quality of semiconductor crystal wafer.Semiconductor crystal wafer provided by the invention electroplates clamp method, and step is reasonable, improves the efficiency of assembling of wafer plating.
Description
Technical field
The present invention relates to crystal column surface electrical-chemistry method technical field more particularly to a kind of semiconductor crystal wafer electroplating clamp and
Clamp method.
Background technology
Wafer refers to the silicon wafer used in silicon semiconductor production of integrated circuits, also known as semiconductor crystal wafer.Semiconductor integrates electricity
Road and other semiconductor devices usually require electroplating processes in process of production, its surface is made to form various metals layer, that is, is reached
It is connected to electrical equipment.The metal of plating generally includes copper, nickel, tin, gold, silver etc..
Wafer plating is that wafer is placed in electroplate liquid, and voltage cathode is applied to the good thin metal of pre-production on wafer
Layer（Seed Layer）On, positive polarity is applied on dissolvable or insoluble anode, by electric field action plating solution
Metal ion deposition to crystal column surface.In this process, it usually needs special wafer electroplating fixture is used to fix wafer,
To ensure that wafer conducts.
Existing semiconductor crystal wafer fixture generally forms conductive layer, semiconductor crystal wafer clamping step using spring pressing or tabletting
Suddenly it is：First wafer is put on fixture, then pressing or tabletting are pressed onto successively on the predetermined position of wafer.Such semiconductor crystal wafer
Fixture and clamp method have the following disadvantages：
（1）Pressing is placed by operating personnel's manual operation, causes the uniformity placed poor, easily checks and accepts operation error, lead
Pressing is caused to scratch wafer, the photoresist on semiconductor crystal wafer is influenced, that is, influences electroplating quality.
（2）Existing semiconductor crystal wafer fixture operation is relative complex, influences the clamping efficiency of semiconductor crystal wafer.
The content of the invention
The purpose of the present invention is being directed to above-mentioned technical problem, a kind of semiconductor crystal wafer electroplating clamp is provided, for clamping half
Semiconductor wafer, clever structure, clamping is reliable, ensure that the uniformity of semiconductor crystal wafer clamping, effective guarantee semiconductor die
Round electroplating quality.Semiconductor crystal wafer provided by the invention electroplates clamp method, and step is reasonable, improves the assembling of wafer plating
Efficiency.
Technical scheme：
In order to solve the above technical problems, the present invention provides a kind of semiconductor crystal wafer electroplating clamp, including external connection
Structure, agent structure and retaining mechanism；
The external connection structure is fixed on the body construction by trip bolt；
The agent structure includes fixture back plate, fixture foreboard, conductive sheet and cushion pad, and the fixture back plate is equipped with and puts
The wafer putting hole of semiconductor crystal wafer is put, the fixture foreboard is equipped with and fixture described in the corresponding through hole of wafer putting hole
The position that wafer putting hole is corresponded on foreboard is additionally provided with the cushion pad groove for placing cushion pad, and the cushion pad is arranged on buffering
It pads in groove, the conductive sheet is clipped between fixture foreboard and fixture back plate and is electrically connected with external connection structure；
The retaining mechanism includes compressing cushion block, knob and connecting rod, and the compression cushion block is arranged in wafer putting hole, uses
It is pressed in by semiconductor crystal wafer on conductive sheet, one end of the connecting rod is rotatably connected in fixture back plate, on the other end of connecting rod
The knob for being limited in wafer putting hole and compression cushion block is made to push down semiconductor crystal wafer compression cushion block is set.
Further, the wafer putting hole is provided with the inclination that semiconductor crystal wafer is facilitated to be put by the one side of retaining mechanism
Guide frame, oriented structure are a taper surface, so can fast be put into semiconductor crystal wafer, improve semiconductor crystal wafer clamping
Efficiency.
Further, the internal diameter of the wafer putting hole is more than the outer diameter 0.1-0.5mm of semiconductor crystal wafer, wafer putting hole
Internal diameter be more than the outer diameter of semiconductor crystal wafer, the design of this clearance fit facilitates the installation of semiconductor crystal wafer.
Further, the knob includes knob head and threaded rod, and knob is threaded in by threaded rod on connecting rod, and
And knob is equipped with spherical structure with compressing one end that cushion block is in contact.
Further, the center of the knob to rotating shaft core distance, equal to compressing the center of cushion block to rotating shaft core
Distance.
Further, the conductive sheet includes conductive layer, inside cover film and outer side covers film, and the conductive layer is conduction
Material, the inside cover film, outer side covers film is insulating materials and are separately positioned on the medial and lateral of conductive layer, described to lead
Electric layer is equipped with electricity-linkingup point and electricity-linkingup point extends the outside of outer side covers film through outer side covers film, and the height of electricity-linkingup point is more than
The thickness of outer side covers film is additionally provided with external conductive tie point described in external conductive tie point on the conductive sheet and passes through conducting wire
It is electrically connected with external connection structure.
Further, the conductive sheet includes cylindrical main body and the connection strap being connected as a single entity with cylindrical main body, described
Electricity-linkingup point is distributed on cylindrical main body, and the external conductive tie point is arranged on connection strap.
Further, the conductive sheet is clipped between fixture back plate and fixture foreboard, and inside is with being arranged on fixture foreboard
On cushion pad be close to, on the outside of electricity-linkingup point be close to semiconductor crystal wafer to be electroplated.
Further, the external connection structure is equipped with conducting wire via, and described conducting wire one end is connected to external conductive company
On contact, the conducting wire other end pass through conducting wire via after, be fixed on external connection structure by trip bolt.
The invention also discloses a kind of clamp methods of semiconductor crystal wafer electroplating clamp, are electroplated using above-mentioned semiconductor crystal wafer
Fixture concretely comprises the following steps：
S1. semiconductor crystal wafer electroplating clamp is assembled, retaining mechanism, external connection structure are fixed on the body construction, it will
Cushion pad is arranged on the inside of conductive sheet；
S2. semiconductor crystal wafer is placed in the wafer putting hole in fixture back plate；
S3., compression cushion block is placed on to the outside of semiconductor crystal wafer；
S4. along shaft swivel link, knob is made to rotate to the outside for compressing cushion block；
S5. locking knob, semiconductor crystal wafer are fixed.
Advantageous effect of the present invention：
A kind of semiconductor crystal wafer electroplating clamp provided by the invention has technique effect beneficial below：
（1）Its clever structure, clamping is reliable, ensure that the uniformity of semiconductor crystal wafer clamping, effective guarantee semiconductor
The electroplating quality of wafer；
（2）Using semiconductor crystal wafer electroplating clamp provided by the invention, corresponding clipping operation is carried out, step is reasonable, carries
The high efficiency of assembling of wafer plating.
Description of the drawings
By the detailed description made in conjunction with the following drawings, above-mentioned advantage of the invention will be apparent and be easier reason
Solution, these attached drawings are simply schematical, are not intended to limit the present invention, wherein：
Fig. 1 is the structure diagram before the semiconductor crystal wafer installation of the present invention；
Fig. 2 is the structure diagram after the semiconductor crystal wafer installation of the present invention；
Fig. 3 is the sectional view of Fig. 2；
Fig. 4 is the partial enlarged view of Fig. 3；
Fig. 5 is the structure diagram of the knob of the present invention；
Fig. 6 is the axonometric drawing of the conductive sheet of the present invention；
Fig. 7 is the partial enlarged view of Fig. 6；
Fig. 8 is the conductive sheet of the present invention and the schematic diagram of external connection structure.
In attached drawing, the component representated by each label is as follows：
1. fixture back plate；1a. oriented structures；1b. wafer putting holes；2. external connection structure；2a. conducting wire vias；
3. trip bolt；4. semiconductor crystal wafer；5. compress cushion block；6. shaft；7. knob；7a. spherical structures；7b. threaded rods；7c. revolves
Button head；8. connecting rod；9. locknut；10. fixture foreboard；10a. through holes；11. conductive sheet；11a. electricity-linkingup points；Cover film on the inside of 11b.；
11c. external conductive tie points；11d. conducting wires；11e. conductive layers；11f. outer side covers films；11j. cylindrical main bodies；11k. connections
Item；12. cushion pad；12a. deformed areas.
Specific embodiment
A kind of semiconductor crystal wafer electroplating clamp of the present invention and clamp method are carried out with reference to specific embodiments and the drawings
It is described in detail.
The embodiment recorded herein is specific specific embodiment of the invention, for illustrating the design of the present invention,
It is explanatory and illustrative, should not be construed as the limitation to embodiment of the present invention and the scope of the invention.Except what is recorded herein
Outside embodiment, those skilled in the art can also be based on the application claims and specification disclosure of that using aobvious and
The other technical solutions being clear to, these technical solutions include any obvious using making for the embodiment to recording herein
The technical solution of substitutions and modifications.
The attached drawing of this specification is schematic diagram, aids in illustrating the design of the present invention, it is schematically indicated the shape of each several part
And its correlation.It note that clearly to show the structure of each component of the embodiment of the present invention, between each attached drawing
Do not drawn according to identical ratio.Identical reference marker is used to represent identical part.
Fig. 1 to Fig. 8 is the accompanying drawings of a kind of semiconductor crystal wafer electroplating clamp and clamp method of the present invention.
Fig. 1 be the present invention semiconductor crystal wafer installation before structure diagram, a kind of semiconductor crystal wafer electroplating clamp, including
External connection structure 2, agent structure and retaining mechanism；
The external connection structure 2 is fixed on the body construction by trip bolt 3；
The agent structure includes fixture back plate 1, fixture foreboard 10, conductive sheet 11 and cushion pad 12（It is shown in FIG. 4）,
The fixture back plate 1 is equipped with the wafer putting hole 1b for placing semiconductor crystal wafer 4, and the fixture foreboard 10 is equipped with and wafer
The position for corresponding to wafer putting hole 1b described in the corresponding through hole 10a of putting hole 1b on fixture foreboard 10 is additionally provided with placement cushion pad
12 cushion pad groove 10b, the cushion pad 12 is arranged in cushion pad groove 10b, before the conductive sheet 11 is clipped in fixture
It is electrically connected between plate 1 and fixture back plate 10 and with external connection structure 2；
The retaining mechanism includes compressing cushion block 5, shaft 6, knob 7, connecting rod 8 and locknut 9, and the compression cushion block 5 is set
In wafer putting hole 1b, for semiconductor crystal wafer 4 to be pressed in conductive sheet 11, one end of the connecting rod 8 is by shaft 6, locknut 9
It is rotatably connected in fixture back plate 1, cushion block 5 will be compressed by, which being provided on the other end of connecting rod 8, is limited in wafer putting hole 1b simultaneously
Compression cushion block 5 is made to push down the knob 7 of semiconductor crystal wafer.
Fig. 2 is the structure diagram after the semiconductor crystal wafer installation of the present invention, at this point, after semiconductor crystal wafer 4 is placed, connecting rod
8 rotate by a certain angle, and knob 7 is located at the top of wafer putting hole 1b；Fig. 3 is the sectional view of Fig. 2, and Fig. 4 is the partial enlargement of Fig. 3
Figure.
In the application, the fixture foreboard 1 is the material of the burn into of resistance to electroplate liquid insulation, and wafer putting hole 1b leans on locking machine
The one side of structure is provided with the oriented structure 1a that semiconductor crystal wafer 4 is facilitated to be put into, and oriented structure 1a is a taper surface；Institute
The major diameter fit of the internal diameter and semiconductor crystal wafer 4 of stating wafer putting hole 1b is set, and the internal diameter of wafer putting hole 1b is more than semiconductor
The outer diameter of wafer 4, the difference range of the two is 0.1-0.5mm.In this way, between wafer putting hole 1b and semiconductor crystal wafer 4
Gap matching design facilitates the installation of semiconductor crystal wafer, improves the efficiency of semiconductor crystal wafer clamping.
The cushion block 5 that compresses is the low engineering plastics of hardness, such as PTFE；In this way, semiconductor die on the one hand can be protected
On the other hand round appearance facilitates knob to be fitted in the outside for compressing cushion block.
The fixture back plate 1, the material that fixture foreboard 10 is the burn into of resistance to electroplate liquid insulation, such as polypropylene, polyvinyl chloride
Deng.The position corresponding with wafer putting hole 1b of fixture foreboard 10 is provided with through hole 10a, is so conducive to electroplate liquid and sufficiently flows through half
Semiconductor wafer surface ensures the uniformity of semiconductor plating.
The cushion pad 12 is the low material of the burn into of resistance to electroplate liquid hardness, and fluorubber may be employed.Can so it facilitate
The compression of conductive sheet comes into full contact with the electricity-linkingup point above conductive sheet, to form good conducting；On the other hand, buffering is utilized
The low characteristic of the hardness of pad facilitates cushion pad and conductive sheet in the deformation depressed, and forms the sealing space of electricity-linkingup point.
Fig. 5 is the structure diagram of the knob of the present invention, is the big engineering plastics of coefficient of friction, including knob head 7c
With threaded rod 7b, knob 7 is threaded in by threaded rod 7b on connecting rod 8, and knob 7 with compress cushion block 5 be in contact one
End is equipped with spherical structure 7a；The center of the knob 7 to 6 axle center of shaft distance, equal to compressing the center of cushion block 5 to shaft 6
The distance in axle center.
The knob head 7c is equipped with knurling structure；Using the big engineering plastics of coefficient of friction, the screw thread on threaded rod 7b
With the screw thread on connecting rod 8 using tight fit, the locking for being conducive to knob 7 is locking.
The partial enlarged view of Fig. 6, as shown in Figure 7.Conductive sheet 11 is covered including conductive layer 11e, inside cover film 11b and outside
Epiphragma 11f, the conductive layer 11e are conductive material, the inside cover film 11b, outer side covers film 11f for insulating materials and
The medial and lateral of conductive layer 11e are separately positioned on, the conductive layer 11e is equipped with electricity-linkingup point 11a and electricity-linkingup point 11a is outside
Side cover film 11f extends the outside of outer side covers film 11f, and the height of electricity-linkingup point 11a is more than the thickness of outer side covers film 11f, institute
State be additionally provided on conductive sheet 11 external conductive tie point 11c, the external conductive tie point 11c pass through conducting wire 11d with it is external
Connection structure 2 is electrically connected.
Fig. 6 is the axonometric drawing of the conductive sheet of the present invention, is linked as including cylindrical main body 11j and with cylindrical main body 11j
The connection strap 11k of one；The electricity-linkingup point 11a is distributed on cylindrical main body 11j, and electricity-linkingup point 11a is arranged on cylindrical main body
There is a circle on 11j, i.e., described cylindrical main body 11j is equipped with a circle electricity-linkingup point 11a；The external conductive tie point 11c is set
On connection strap 11k.
Electricity-linkingup point 11a materials are not by the metal of bath corrosion, such as titanium, gold, platinum etc., are by plating, chemical plating
The mode of Material growths is waited to be made.
In Fig. 2 the embodiment described, conductive sheet 11 is clipped between fixture back plate 1 and fixture foreboard 10, and inside is with setting
The cushion pad 12 put on fixture foreboard 10 is close to, on the outside of electricity-linkingup point 11a be close to semiconductor crystal wafer 4 to be electroplated.
Fig. 8 is the conductive sheet of the present invention and the schematic diagram of external connection structure, and external connection structure 2 is equipped with conducting wire via
2a, the conducting wire 11d are electrically connected by via 2a with external connection structure 2.Conducting wire 11d one end on conductive sheet 11 is connected to outer
On portion conducting connection point 11c, the other end is fixed on outer through the conducting wire via 2a on external connection structure 2 by trip bolt 3
On portion connecting structure 2.After external conductive tie point 11c is connected with conducting wire 11d, surface will smear corrosion resistant insulating materials.
In this application, conducting wire 11d is the conducting wire of bag erosion resisting insulation layer, and erosion resisting insulation layer can be the materials such as Teflon
Expect the coating that the pipe made or the materials such as hanger paint make.
External connection structure 2 is the conductive corrosion of resistance to plating metal material, can use titanium；External connection structure 2
Surface can also increase noble coatings and improve electric conductivity and corrosion resistance, which can be the external knot such as platinum, gold
Structure is the conductive corrosion of resistance to plating metal material, such as titanium etc..
The invention also discloses a kind of clamp methods of semiconductor crystal wafer electroplating clamp, use above-mentioned semiconductor crystal wafer electricity
Fixture is plated, step is：
S1. semiconductor crystal wafer electroplating clamp is assembled, retaining mechanism, external connection structure 2 are fixed on the body construction, it will
Cushion pad 12 is arranged on the inside of conductive sheet 11；
S2. semiconductor crystal wafer 4 is placed in the wafer putting hole 1b in fixture back plate 1；
S3., compression cushion block 5 is placed on to the outside of semiconductor crystal wafer 4；
S4. along 6 swivel link 8 of shaft, the rotation of knob 7 is made to the outside for compressing cushion block 5；
S5. locking knob 7, semiconductor crystal wafer 4 are fixed.
The clamp method of semiconductor crystal wafer electroplating clamp, step set reasonable, to be electroplated semiconductor crystal wafer clamping reliable,
The electroplating quality of semiconductor crystal wafer has been effectively ensured.
A kind of semiconductor crystal wafer electroplating clamp provided by the invention, clever structure, clamping is reliable, ensure that semiconductor die
The uniformity of circle clamping, the effective guarantee electroplating quality of semiconductor crystal wafer.Semiconductor crystal wafer plating clamping provided by the invention
Method, step is reasonable, improves the efficiency of assembling of wafer plating.
The present invention is not limited to the above-described embodiments, anyone can draw other various forms under the enlightenment of the present invention
Product, it is every that there is technical side identical or similar to the present application however, make any variation in its shape or structure
Case is within the scope of the present invention.
Claims (9)
1. a kind of semiconductor crystal wafer electroplating clamp, for clamping semiconductor crystal wafer（4）, which is characterized in that including external connection knot
Structure（2）, agent structure and retaining mechanism；
The external connection structure（2）By trip bolt（3）It fixes on the body construction；
The agent structure includes fixture back plate（1）, fixture foreboard（10）, conductive sheet（11）And cushion pad（12）, the fixture
Back plate（1）It is equipped with and places semiconductor crystal wafer（4）Wafer putting hole（1b）, the fixture foreboard（10）It is equipped with and wafer
Putting hole（1b）Corresponding through hole（10a）, the fixture foreboard（10）Upper corresponding wafer putting hole（1b）Position be additionally provided with
Place cushion pad（12）Cushion pad groove（10b）, the cushion pad（12）It is arranged on cushion pad groove（10b）In, it is described
Conductive sheet（11）It is clipped in fixture foreboard（1）With fixture back plate（10）Between and and external connection structure（2）Electrical connection；
The retaining mechanism includes compressing cushion block（5）, knob（7）And connecting rod（8）, the compression cushion block（5）Wafer is arranged on to put
Put hole（1b）In, for by semiconductor crystal wafer（4）It is pressed in conductive sheet（11）On, the connecting rod（8）One end be rotatably connected on folder
Has back plate（1）On, connecting rod（8）The other end on set will compress cushion block（5）It is limited to wafer putting hole（1b）In and make compression
Cushion block（5）Push down the knob of semiconductor crystal wafer（7）；
The conductive sheet（11）Including conductive layer（11e）, inside cover film（11b）And outer side covers film（11f）, the conductive layer
（11e）For conductive material, the inside cover film（11b）, outer side covers film（11f）It is led for insulating materials and being separately positioned on
Electric layer（11e）Medial and lateral, the conductive layer（11e）It is equipped with electricity-linkingup point（11a）And electricity-linkingup point（11a）It is covered through outside
Epiphragma（11f）Extend outer side covers film（11f）Outside, electricity-linkingup point（11a）Height be more than outer side covers film（11f）Thickness
Degree, the conductive sheet（11）On be additionally provided with external conductive tie point（11c）, the external conductive tie point（11c）By leading
Line（11d）With external connection structure（2）Electrical connection.
2. semiconductor crystal wafer electroplating clamp according to claim 1, which is characterized in that the wafer putting hole（1b）By locking
The one side of mechanism, which is provided with, facilitates semiconductor crystal wafer（4）The oriented structure being put into（1a）, oriented structure（1a）For one
Taper surface.
3. semiconductor crystal wafer electroplating clamp according to claim 1, which is characterized in that the wafer putting hole（1b）Internal diameter
More than semiconductor crystal wafer（4）Outer diameter 0.1-0.5mm.
4. semiconductor crystal wafer electroplating clamp according to claim 1, which is characterized in that the knob（7）Including knob head
（7c）And threaded rod（7b）, knob（7）Pass through threaded rod（7b）It is threaded in connecting rod（8）On, and knob（7）With clamping pad
Block（5）The one end being in contact is equipped with spherical structure（7a）.
5. semiconductor crystal wafer electroplating clamp according to claim 1, which is characterized in that the knob（7）Center to shaft
（6）The distance in axle center, equal to compression cushion block（5）Center to shaft（6）The distance in axle center.
6. semiconductor crystal wafer electroplating clamp according to claim 1, which is characterized in that the conductive sheet（11）Including circular ring shape
Main body（11j）With with cylindrical main body（11j）The connection strap being connected as a single entity（11k）, the electricity-linkingup point（11a）It is distributed on circular ring shape
Main body（11j）On, the external conductive tie point（11c）It is arranged on connection strap（11k）On.
7. semiconductor crystal wafer electroplating clamp according to claim 1, which is characterized in that the conductive sheet（11）After being clipped in fixture
Plate（1）With fixture foreboard（10）Between, inside is with being arranged on fixture foreboard（10）On cushion pad（12）It is close to, on the outside of
Electricity-linkingup point（11a）With semiconductor crystal wafer to be electroplated（4）It is close to.
8. semiconductor crystal wafer electroplating clamp according to claim 1, which is characterized in that the external connection structure（2）On set
There is conducting wire via（2a）, the conducting wire（11d）One end is connected to external conductive tie point（11c）On, conducting wire（11d）The other end is worn
Cross conducting wire via（2a）Afterwards, by trip bolt（3）It is fixed on external connection structure（2）On.
A kind of 9. clamp method of semiconductor crystal wafer electroplating clamp, which is characterized in that the semiconductor die described in usage right requirement 1
Circle electroplating clamp, step are：
S1. semiconductor crystal wafer electroplating clamp is assembled, by retaining mechanism, external connection structure（2）It fixes on the body construction, it will be slow
Punching pad（12）It is arranged on conductive sheet（11）Inside；
S2. by semiconductor crystal wafer（4）It is placed on fixture back plate（1）On wafer putting hole（1b）It is interior；
S3. cushion block will be compressed（5）It is placed on semiconductor crystal wafer（4）Outside；
S4. along shaft（6）Swivel link（8）, make knob（7）Rotation extremely compresses cushion block（5）Outside；
S5. locking knob（7）, semiconductor crystal wafer（4）Fixed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610991074.5A CN106555220B (en) | 2016-11-11 | 2016-11-11 | A kind of semiconductor crystal wafer electroplating clamp and clamp method |
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| CN201610991074.5A CN106555220B (en) | 2016-11-11 | 2016-11-11 | A kind of semiconductor crystal wafer electroplating clamp and clamp method |
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| CN106555220A CN106555220A (en) | 2017-04-05 |
| CN106555220B true CN106555220B (en) | 2018-05-18 |
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| CN110820033A (en) * | 2019-12-19 | 2020-02-21 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Sputtered ceramic substrate electroplating hanger and clamping method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201116311Y (en) * | 2007-08-29 | 2008-09-17 | 中国电子科技集团公司第二研究所 | Wafer bump manufacturing hanger |
| CN103469271A (en) * | 2013-09-11 | 2013-12-25 | 深圳市创智成功科技有限公司 | Hanging tool for wafer electroplating |
| CN205046216U (en) * | 2015-09-24 | 2016-02-24 | 美新半导体（无锡）有限公司 | Wafer electroplating fixture |
| CN205529113U (en) * | 2016-03-14 | 2016-08-31 | 武汉欧普兰光电技术股份有限公司 | Clamping device is electroplated to semiconductor wafer |
-
2016
- 2016-11-11 CN CN201610991074.5A patent/CN106555220B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201116311Y (en) * | 2007-08-29 | 2008-09-17 | 中国电子科技集团公司第二研究所 | Wafer bump manufacturing hanger |
| CN103469271A (en) * | 2013-09-11 | 2013-12-25 | 深圳市创智成功科技有限公司 | Hanging tool for wafer electroplating |
| CN205046216U (en) * | 2015-09-24 | 2016-02-24 | 美新半导体（无锡）有限公司 | Wafer electroplating fixture |
| CN205529113U (en) * | 2016-03-14 | 2016-08-31 | 武汉欧普兰光电技术股份有限公司 | Clamping device is electroplated to semiconductor wafer |
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