CN114075688A - Electroplating carrier and electroplating method - Google Patents
Electroplating carrier and electroplating method Download PDFInfo
- Publication number
- CN114075688A CN114075688A CN202010850424.2A CN202010850424A CN114075688A CN 114075688 A CN114075688 A CN 114075688A CN 202010850424 A CN202010850424 A CN 202010850424A CN 114075688 A CN114075688 A CN 114075688A
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- Prior art keywords
- electroplating
- plate
- wafer
- carrier
- conductive
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000007747 plating Methods 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 52
- 239000000565 sealant Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Abstract
The invention provides an electroplating carrier and an electroplating method. The electroplating carrier comprises an anode bottom plate, a conductive plate and a cover plate, wherein the conductive plate comprises a conductive plate body and a conductive wire, a containing groove and a wire groove are formed in the anode bottom plate, the conductive plate body is embedded in the containing groove, the conductive wire is embedded in the wire groove, a wafer to be electroplated is located on the surface of the conductive plate body, the cover plate covers the circumferential edge of the wafer, and the cover plate is fixed with the anode bottom plate. Through the improved structural design, the wafer to be electroplated is electrically connected with the power supply by adopting the conductive plate without arranging an additional conductive wire on the anode bottom plate, so that the electrical connection of the wafer in the electroplating process can be effectively ensured, the electroplating quality can be effectively improved, the pollution to the wafer is reduced, the service life of an electroplating carrier is prolonged, and the production cost is reduced. The electroplating method using the electroplating carrier is beneficial to improving the electroplating quality and reducing the electroplating cost.
Description
Technical Field
The present invention relates to the field of semiconductor packaging, and more particularly, to an electroplating carrier and an electroplating method.
Background
The Wafer Level Packaging (WLP) technology is a process flow of cutting a wafer into individual independent finished chips after Packaging by using a whole wafer as a Packaging and testing object, which is greatly different from the conventional chip Packaging process. The size of the chip packaged by the WLP process can be reduced by more than 20% compared with the size of the chip packaged by the conventional process, and thus the WLP package has become the mainstream of the packaging market.
In the WLP packaging process, forming wafer bumps by an electroplating process to achieve electrical connection of devices is a crucial process, and the quality of the process is directly related to the electrical performance of the final product. In the conventional electroplating process for bumping a wafer, the wafer to be electroplated is placed in an anode carrier, and then the anode carrier and the wafer are immersed in the electroplating solution. Specifically, the anode carrier comprises a bottom plate and a conducting ring, a containing groove is formed in the bottom plate, a conducting layer is arranged on the surface of the groove, a plurality of conducting wires are arranged along the circumferential direction of the groove, the surface of each conducting wire is sealed by a sealant, the conducting wires are electrically connected with the conducting layer, the conducting ring is embedded in the groove and is in contact with the conducting layer, a wafer to be electroplated is embedded in the conducting ring and is in contact with the conducting ring, and therefore the wafer is electrically connected to a power supply to complete an electroplating process. Because the contact points of the conductive wires and the conductive layers are all immersed in the electroplating solution in the electroplating process, the sealant is aged and deteriorated after long-term use, the electroplating solution can erode the conductive wires, the poor electric contact of the wafer is easily caused, the electroplating quality is reduced, and the aged sealant is easily dissolved in the electroplating solution to cause the wafer pollution; in addition, the conductive wire is usually formed on the anode carrier directly by electroplating or other processes, and has only a thin layer, so that once the conductive wire is damaged, the conductive wire is difficult to repair, and therefore, the conductive wire can only be scrapped, which leads to the reduction of the service life of the anode carrier and the increase of the production cost.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide an electroplating carrier and an electroplating method, for solving the problems that the existing electroplating carrier adopts a bottom plate and a conductive ring structure, the conductive ring is electrically connected to a conductive wire on the bottom plate, after long-term use, a sealant on the surface of a contact point is aged and deteriorated, an electroplating solution corrodes the conductive wire, which easily causes poor electrical contact of a wafer to cause reduced electroplating quality, and the aged sealant is easily dissolved in the electroplating solution to cause wafer contamination; in addition, the conductive wire is usually formed on the anode carrier directly by electroplating and other processes, and once the conductive wire is damaged, the conductive wire is difficult to repair, so that the anode carrier can only be scrapped, and the problems of the service life reduction of the anode carrier, the production cost increase and the like are caused.
In order to achieve the above and other related objects, the present invention provides an electroplating carrier, which includes an anode plate, a conductive plate and a cover plate, wherein the conductive plate includes a conductive plate body and a conductive wire connected to the conductive plate body, the anode plate is provided with an accommodating groove and a wire groove communicated with the accommodating groove, the conductive plate body is embedded in the accommodating groove, the conductive wire is embedded in the wire groove, a wafer to be electroplated is located on a surface of the conductive plate body, the cover plate covers a circumferential edge of the wafer, and the cover plate is fixed to the anode plate.
Optionally, the conductive plate body has a plurality of lugs spaced apart along a circumferential direction, the anode base plate has a plurality of slots spaced apart along the circumferential direction, and the lugs are embedded in the slots in a one-to-one correspondence.
Optionally, a through hole is provided on the protrusion, and a fastener passes through the through hole to fix the anode bottom plate and the conductive plate body.
Optionally, the side wall of the slot has an inclined slope, and the protrusion contacts with the inclined slope.
Optionally, the cover plate and the anode base plate are fixed by a plurality of screws.
Optionally, the conductive plate is a titanium plate.
Optionally, the apron is the rectangular plate, be provided with the circular port on the rectangular plate, the size of circular port with the regional size phase-match is electroplated to treating of wafer.
Optionally, a plurality of connection holes are formed in the conductive wire, and a fastener penetrates through the connection holes to fix the conductive wire in the wire slot of the anode bottom plate.
The invention also provides an electroplating method, wherein the electroplating carrier in any scheme is adopted to fix a wafer to be electroplated.
As described above, the electroplating carrier of the present invention uses the conductive plate to directly electrically connect the wafer to be electroplated with the power supply, and no additional conductive wire is required to be arranged on the anode bottom plate, so that the electrical connection of the wafer in the electroplating process can be effectively ensured, the electroplating quality can be effectively improved, the wafer pollution can be reduced, the service life of the electroplating carrier can be prolonged, and the production cost can be reduced. The electroplating method using the electroplating carrier is beneficial to improving the electroplating quality and reducing the electroplating cost.
Drawings
FIG. 1 is a schematic view of an electroplating carrier according to the present invention.
Fig. 2 shows an exploded view of fig. 1.
Fig. 3 is a schematic structural view of the anode base plate in fig. 2.
Fig. 4 is a schematic structural diagram of the conductive plate in fig. 2.
Description of the element reference numerals
1 anode base plate
11 accommodating groove
12 wire groove
13 card slot
2 conductive plate
21 conductive plate body
211 bump
22 conductive wire
221 connecting hole
3 cover plate
4 wafer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 4. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1 to 4, the present invention provides an electroplating carrier, which includes an anode substrate 1, a conductive plate 2 and a cover plate 3, wherein the conductive plate 2 includes a conductive plate body 21 and a conductive wire 22 connected to the conductive plate body 21, and the conductive wire 22 is electrically connected to a power supply during an electroplating process, so as to electrically connect a wafer 4 to the power supply (a patterned metal seed layer, such as an electroplated copper layer of about 2.5 μm, is formed on the wafer, and an electroplated metal is deposited on the metal seed layer after the electrical connection); the anode bottom plate 1 is provided with an accommodating groove 11 and a wire groove 12 communicated with the accommodating groove 11, the conductive plate body 21 is embedded in the accommodating groove 11, the conductive wire 22 is embedded in the wire groove 12, the wafer 4 to be electroplated is positioned on the surface of the conductive plate body 21, the cover plate 3 covers the circumferential edge of the wafer 4 (usually covers the non-device area at the edge of the wafer 4, the width of the area is usually less than 5mm), the cover plate 3 is fixed with the anode bottom plate 1, namely, the wafer 4 is positioned between the cover plate 3 and the conductive plate 2, and the conductive plate 2 is positioned between the wafer 4 and the anode bottom plate 1. Through the improved structural design, the wafer to be electroplated is directly and electrically connected with the power supply by the conductive plate without arranging an additional conductive wire on the anode bottom plate, so that the electric connection of the wafer in the electroplating process can be effectively ensured, the electroplating quality can be effectively improved, the pollution to the wafer is reduced, the service life of an electroplating carrier is prolonged, and the production cost is reduced.
The conductive plate body 21 is generally sized to correspond to the wafer 4. As an example, the conductive plate body 21 has a plurality of protrusions 211 (the protrusions 211 extend in a direction away from the center of the conductive plate body 21) distributed at intervals in the circumferential direction (and preferably uniformly distributed), for example, the number of the protrusions 211 may be 3, 4, 5, 6 or more, the anode base plate 1 has a plurality of slots 13 (the slots 13 are communicated with the receiving grooves 11) distributed at intervals in the circumferential direction (and also preferably uniformly distributed), and the protrusions 211 are embedded in the slots 13 in a one-to-one correspondence. By this arrangement, it is facilitated to better fix the conductive plate 2 to the anode base plate 1.
As an example, the depth of the accommodation groove 11 is not less than the sum of the thickness of the wafer 4 and the thickness of the conductive plate 2 (preferably the same).
In a further example, the protrusion 211 is provided with a through hole through which a fastener passes to fix the anode base plate 1 and the conductive plate body 21.
As an example, the side wall of the clamping groove 13 has an inclined slope, and the protrusion 211 is in contact with the inclined slope, for example, the inclined slope gradually inclines downwards from the edge of the anode base plate 1 to the center direction of the anode base plate 1 (i.e. towards the surface of the receiving groove 11 of the anode base plate 1). The wafer 4 is taken and placed by the inclined slope.
In an example, in order to facilitate the removal of the wafer 4 after the electroplating is completed, a plurality of pressure relief holes may be formed in the surface of the accommodating recess 11 of the anode base plate 1, so as to avoid that the wafer is difficult to be removed due to an excessively large absorption force between the liquid and the wafer 4 during the wafer removal.
The material of the anode base plate 1 may be determined according to the material of the plating solution, and is preferably not easily adsorbed with metal ions in the plating solution and not corroded by the plating solution. In one example, the anode base plate 1 is a metal plate. Of course, in other examples, the anode base plate 1 may be a teflon plate.
As an example, the cover plate 3 and the anode base plate 1 are fixed by a plurality of screws, so that a plurality of screw holes are uniformly distributed on the cover plate 3 along the circumferential direction at intervals, and a plurality of screw holes are correspondingly arranged on the anode base plate 1.
The conductive plate 2 is a titanium plate, and the conductive plate body 21 and the conductive wire 22 are preferably integrally connected, and are preferably both made of titanium or a mixed material with a titanium metal layer plated on the surface. The shape of the conductive wire 22 matches the wire chase 12. For example, in one example, the wire grooves 12 are rectangular grooves and the conductive wires 22 are rectangular cylindrical wires, i.e., the conductive wires 22 have a certain width, and the conductive wires 22 may be straight line segments or L-shaped line segments as required. In a further example, a plurality of connection holes 221 are formed in the conductive line 22, and a fastener penetrates through the connection holes 221 to fix the conductive line 22 in the line slot 12 of the anode base plate 1, so that the electrical connection in the electroplating process can be further ensured, and the influence on the electroplating uniformity due to the current change caused by the shaking of the conductive line 22 is avoided.
As an example, the cover plate 3 is a rectangular plate (precisely, a circumferential rectangle) provided with a circular hole, and the size of the circular hole matches with the size of the region to be plated of the wafer 4. A wafer 4 may be placed on the conductive plate 2 with the surface to be plated facing down. The cover plate 3 may be made of non-metal materials such as polytetrafluoroethylene (ptfe) and polyvinyl chloride (PVC).
The inventors have tried the plating carrier of the present invention several times in a factory. Trial results show that the service life of the plating carrier of the present invention can be extended by more than 20% compared to conventional carriers (in terms of the number of wafers that can be processed by a single plating carrier). At present, the electroplating carrier is already popularized and used in the factory where the inventor is located.
The invention also provides an electroplating method, wherein the electroplating carrier in any scheme is adopted to fix the wafer to be electroplated in the electroplating process, after the wafer and the electroplating carrier are fixed, the wafer and the electroplating carrier are put into electroplating solution, and the electroplating process is finished according to the set electroplating parameters (including electroplating time, electroplating size, electroplating solution concentration and the like). The electroplating method of the present invention is the same as the conventional electroplating method except for the difference that the electroplating carrier of the present invention is used, and the details thereof are not described herein since they are well known to those skilled in the art. The electroplating method using the electroplating carrier can ensure the electric connection of the wafer in the electroplating process, and because no sealant is used, the sealant is not worried about the pollution caused by the dissolution of the sealant in the electroplating solution, thereby being beneficial to improving the electroplating quality, greatly prolonging the service life of the electroplating carrier and reducing the electroplating cost.
As described above, the present invention provides an electroplating carrier and an electroplating method. The electroplating carrier includes positive pole bottom plate, current conducting plate and apron, the current conducting plate include the current conducting plate body and with the conductor wire that the current conducting plate body is connected, be provided with on the positive pole bottom plate hold the recess and with hold the wire casing that the recess is linked together, the current conducting plate body inlays to be located hold in the recess, the conductor wire inlays to be located in the wire casing, the wafer of treating electroplating is located the surface of current conducting plate body, the apron covers the circumference edge of wafer, the apron with the positive pole bottom plate is fixed, promptly the wafer is located the apron reaches between the current conducting plate, and the current conducting plate is located the wafer with between the positive pole bottom plate. Through the improved structural design, the wafer to be electroplated is electrically connected with the power supply by adopting the conductive plate without arranging an additional conductive wire on the anode bottom plate, so that the electrical connection of the wafer in the electroplating process can be effectively ensured, the electroplating quality can be effectively improved, the pollution to the wafer is reduced, the service life of an electroplating carrier is prolonged, and the production cost is reduced. The invention can be applied to the electroplating of the wafer and can be popularized to other environments needing electroplating operation. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. The utility model provides an electroplating carrier, its characterized in that, electroplating carrier includes positive pole bottom plate, current conducting plate and apron, the current conducting plate include the current conducting plate body and with the conductor wire that the current conducting plate body is connected, be provided with on the positive pole bottom plate hold the recess and with hold the wire casing that the recess is linked together, the current conducting plate body inlays to be located hold in the recess, the conductor wire inlays to be located in the wire casing, the wafer of treating electroplating is located the surface of current conducting plate body, the apron covers the circumference edge of wafer, the apron with the positive pole bottom plate is fixed mutually.
2. The plating carrier of claim 1, wherein: the anode bottom plate is provided with a plurality of clamping grooves along the circumferential direction, and the convex blocks are embedded in the clamping grooves in a one-to-one correspondence mode.
3. The plating carrier of claim 2, wherein: the lug is provided with a through hole, and a fastener penetrates through the through hole to fix the anode bottom plate and the conductive plate body.
4. The plating carrier of claim 2, wherein: the lateral wall of draw-in groove has slope surface, the lug with slope surface contacts.
5. The plating carrier of claim 1, wherein: the cover plate and the anode bottom plate are fixed through a plurality of screws.
6. The plating carrier of claim 1, wherein: the conductive plate is a titanium plate.
7. The plating carrier of claim 1, wherein: the cover plate is a rectangular plate, a circular hole is formed in the rectangular plate, and the size of the circular hole is matched with the size of the to-be-electroplated area of the wafer.
8. The plating carrier of claim 1, wherein: the conductive wire is provided with a plurality of connecting holes, and a fastener penetrates through the connecting holes to fix the conductive wire in the wire slot of the anode bottom plate.
9. An electroplating method, wherein the electroplating carrier of any one of claims 1-8 is used to fix a wafer to be electroplated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010850424.2A CN114075688A (en) | 2020-08-21 | 2020-08-21 | Electroplating carrier and electroplating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010850424.2A CN114075688A (en) | 2020-08-21 | 2020-08-21 | Electroplating carrier and electroplating method |
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| Publication Number | Publication Date |
|---|---|
| CN114075688A true CN114075688A (en) | 2022-02-22 |
Family
ID=80282568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010850424.2A Pending CN114075688A (en) | 2020-08-21 | 2020-08-21 | Electroplating carrier and electroplating method |
Country Status (1)
| Country | Link |
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| CN (1) | CN114075688A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1908247A (en) * | 2005-06-20 | 2007-02-07 | 株式会社山本镀金试验器 | Electroplating jig |
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| CN106555220A (en) * | 2016-11-11 | 2017-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | A kind of semiconductor crystal wafer electroplating clamp and clamp method |
| CN106711103A (en) * | 2016-11-11 | 2017-05-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Conducting strip used for semiconductor wafer electroplating and electric contact sealing structure |
| CN108048887A (en) * | 2018-01-16 | 2018-05-18 | 昆山成功环保科技有限公司 | A kind of wafer electroplate jig |
| CN110387571A (en) * | 2018-04-17 | 2019-10-29 | 姜力 | Wafer jig for electroplating device |
| CN110799677A (en) * | 2017-06-28 | 2020-02-14 | 株式会社荏原制作所 | Substrate holder and plating device |
| CN111394776A (en) * | 2020-04-07 | 2020-07-10 | 中国电子科技集团公司第十三研究所 | Self-locking hanger for double-sided electroplating of wafer |
| CN211142218U (en) * | 2019-10-31 | 2020-07-31 | 山东光弘半导体有限公司 | Semiconductor wafer electroplating clamp |
| CN212451705U (en) * | 2020-08-21 | 2021-02-02 | 中芯长电半导体（江阴）有限公司 | Electroplating carrier |
-
2020
- 2020-08-21 CN CN202010850424.2A patent/CN114075688A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1908247A (en) * | 2005-06-20 | 2007-02-07 | 株式会社山本镀金试验器 | Electroplating jig |
| CN103469271A (en) * | 2013-09-11 | 2013-12-25 | 深圳市创智成功科技有限公司 | Hanging tool for wafer electroplating |
| KR20160097446A (en) * | 2015-02-06 | 2016-08-18 | 삼성디스플레이 주식회사 | A jig for electroplating and a method of manufacturing an electroplated article |
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| CN110799677A (en) * | 2017-06-28 | 2020-02-14 | 株式会社荏原制作所 | Substrate holder and plating device |
| CN108048887A (en) * | 2018-01-16 | 2018-05-18 | 昆山成功环保科技有限公司 | A kind of wafer electroplate jig |
| CN110387571A (en) * | 2018-04-17 | 2019-10-29 | 姜力 | Wafer jig for electroplating device |
| CN211142218U (en) * | 2019-10-31 | 2020-07-31 | 山东光弘半导体有限公司 | Semiconductor wafer electroplating clamp |
| CN111394776A (en) * | 2020-04-07 | 2020-07-10 | 中国电子科技集团公司第十三研究所 | Self-locking hanger for double-sided electroplating of wafer |
| CN212451705U (en) * | 2020-08-21 | 2021-02-02 | 中芯长电半导体（江阴）有限公司 | Electroplating carrier |
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