CN106531758B - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

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Publication number
CN106531758B
CN106531758B CN201610137827.6A CN201610137827A CN106531758B CN 106531758 B CN106531758 B CN 106531758B CN 201610137827 A CN201610137827 A CN 201610137827A CN 106531758 B CN106531758 B CN 106531758B
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CN
China
Prior art keywords
layer
substrate
light
light emitting
light emitter
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201610137827.6A
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English (en)
Chinese (zh)
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CN106531758A (zh
Inventor
加贺广持
田岛纯平
岡俊行
宫部主之
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Toshiba Corp
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Toshiba Corp
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Priority to CN201810687787.1A priority Critical patent/CN108807358B/zh
Publication of CN106531758A publication Critical patent/CN106531758A/zh
Application granted granted Critical
Publication of CN106531758B publication Critical patent/CN106531758B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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CN201610137827.6A 2015-09-10 2016-03-10 半导体发光装置 Expired - Fee Related CN106531758B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810687787.1A CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置
JP2015-178165 2015-09-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810687787.1A Division CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置

Publications (2)

Publication Number Publication Date
CN106531758A CN106531758A (zh) 2017-03-22
CN106531758B true CN106531758B (zh) 2018-09-28

Family

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Family Applications (2)

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CN201610137827.6A Expired - Fee Related CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置
CN201810687787.1A Expired - Fee Related CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置

Family Applications After (1)

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CN201810687787.1A Expired - Fee Related CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置

Country Status (4)

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US (2) US9722162B2 (https=)
JP (1) JP6637703B2 (https=)
CN (2) CN106531758B (https=)
TW (2) TWI612695B (https=)

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Publication number Priority date Publication date Assignee Title
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
JP6380512B2 (ja) * 2016-11-16 2018-08-29 富士ゼロックス株式会社 発光素子アレイ、および光伝送装置
TWI646377B (zh) * 2017-11-03 2019-01-01 友達光電股份有限公司 顯示裝置及其製造方法
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
CN110473975A (zh) * 2019-07-29 2019-11-19 吉林大学 一种交流驱动的双微腔顶发射白光有机电致发光器件
KR102851496B1 (ko) * 2020-05-13 2025-08-28 삼성디스플레이 주식회사 표시 장치

Citations (7)

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US20090008654A1 (en) * 2004-12-22 2009-01-08 Hideo Nagai Semiconductor Light Emitting Device, Illumination Module, Illumination Apparatus, Method For Manufacturing Semiconductor Light Emitting Device, and Method For Manufacturing Semiconductor Light Emitting Element
US20110018013A1 (en) * 2009-07-21 2011-01-27 Koninklijke Philips Electronics N.V. Thin-film flip-chip series connected leds
CN102201426A (zh) * 2010-03-23 2011-09-28 展晶科技(深圳)有限公司 发光二极管及其制作方法
CN102208512A (zh) * 2010-03-24 2011-10-05 日立电线株式会社 发光二极管
US20120043563A1 (en) * 2009-04-06 2012-02-23 James Ibbetson High Voltage Low Current Surface Emitting Light Emitting Diode
US20120104424A1 (en) * 2008-12-31 2012-05-03 Seoul Opto Device Co., Ltd. Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same
CN102956663A (zh) * 2011-08-17 2013-03-06 铼钻科技股份有限公司 垂直式发光二极管结构及其制备方法

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JP3303154B2 (ja) 1994-09-30 2002-07-15 ローム株式会社 半導体発光素子
WO2005062389A2 (en) 2003-12-24 2005-07-07 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
CN101820043A (zh) * 2006-01-09 2010-09-01 首尔Opto仪器股份有限公司 发光装置
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP2010165983A (ja) * 2009-01-19 2010-07-29 Sharp Corp 発光チップ集積デバイスおよびその製造方法
JP5426481B2 (ja) * 2010-05-26 2014-02-26 株式会社東芝 発光装置
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KR101956101B1 (ko) * 2012-09-06 2019-03-11 엘지이노텍 주식회사 발광소자
CN104737310B (zh) * 2012-10-15 2017-09-01 首尔伟傲世有限公司 半导体装置及其制造方法
CN104813489B (zh) * 2012-11-23 2018-01-02 首尔伟傲世有限公司 发光二极管及其制造方法
US8963121B2 (en) * 2012-12-07 2015-02-24 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
KR102065390B1 (ko) * 2013-02-15 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技（上海）有限公司 一種結合磊晶結構與封裝基板爲一體之整合式ｌｅｄ元件及其製作方法
JP2014170977A (ja) 2014-06-27 2014-09-18 Toshiba Corp 発光装置
TWI552394B (zh) * 2014-11-18 2016-10-01 隆達電子股份有限公司 發光二極體結構與發光二極體模組

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
US20090008654A1 (en) * 2004-12-22 2009-01-08 Hideo Nagai Semiconductor Light Emitting Device, Illumination Module, Illumination Apparatus, Method For Manufacturing Semiconductor Light Emitting Device, and Method For Manufacturing Semiconductor Light Emitting Element
US20120104424A1 (en) * 2008-12-31 2012-05-03 Seoul Opto Device Co., Ltd. Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same
US20120043563A1 (en) * 2009-04-06 2012-02-23 James Ibbetson High Voltage Low Current Surface Emitting Light Emitting Diode
US20110018013A1 (en) * 2009-07-21 2011-01-27 Koninklijke Philips Electronics N.V. Thin-film flip-chip series connected leds
TW201115729A (en) * 2009-07-21 2011-05-01 Philips Lumileds Lighting Co Thin-film flip-chip series connected LEDs
CN102201426A (zh) * 2010-03-23 2011-09-28 展晶科技(深圳)有限公司 发光二极管及其制作方法
CN102208512A (zh) * 2010-03-24 2011-10-05 日立电线株式会社 发光二极管
CN102956663A (zh) * 2011-08-17 2013-03-06 铼钻科技股份有限公司 垂直式发光二极管结构及其制备方法

Also Published As

Publication number Publication date
US20170077366A1 (en) 2017-03-16
TW201743478A (zh) 2017-12-16
TWI697140B (zh) 2020-06-21
US10134806B2 (en) 2018-11-20
JP2017054942A (ja) 2017-03-16
CN106531758A (zh) 2017-03-22
US9722162B2 (en) 2017-08-01
TWI612695B (zh) 2018-01-21
TW201711232A (zh) 2017-03-16
US20170301725A1 (en) 2017-10-19
CN108807358B (zh) 2022-05-03
CN108807358A (zh) 2018-11-13
JP6637703B2 (ja) 2020-01-29

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Granted publication date: 20180928