CN106486366B - 减薄磷化铟层的方法 - Google Patents
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Abstract
一种减薄磷化铟层的方法，所述形成方法具体包括：提供鳍部，所述鳍部的材料为铟镓砷；提供磷化铟层，所述磷化铟层覆盖所述鳍部；将所述磷化铟层表面的一部分转化成富磷层；以及去除所述富磷层。所述方法通过将磷化铟层表面的一部分转化为富磷层并去除，从而达到减薄磷化铟层的目的，所述富磷层容易除去，且去除过程中不容易产生污染物。
Description
技术领域
本发明涉及半导体制造技术，特别涉及一种减薄磷化铟层的方法。
背景技术
随着半导体集成电路技术的发展，半导体器件的关键尺寸也在不断缩小，常规的MOS场效应晶体管会因为关键尺寸太小而导致短沟道效应等缺点。鳍式场效应晶体管(FinFET)由于具有较大的沟道，且能克服短沟道效应而得到了广泛应用。但是当关键尺寸缩小到16nm时，若FinFET的鳍部材料为硅，由于硅的电子迁移率低，会导致沟道区中的载流子迁移率低，进而导致FinFET的驱动电流小，而且能耗大。因此需要使用电子迁移率更高的材料来代替硅制作鳍部。
现有技术公开了一种鳍部的材料为III-V族元素(例如铟镓砷)的FinFET，III-V族元素因能耗低的特点从而提供了更高的载流子迁移率。但当关键尺寸进一步缩小到5nm或7nm时，则要求FinFET具有更低的能耗。
现有技术公开了一种FinFET，所述FinFET中材料为铟镓砷的鳍部上覆盖有磷化铟层。因为磷化铟层与铟镓砷之间很小的晶格失配，以及很高的电子饱和速率，所以FinFET具有能耗低的特点。但是受工艺条件的限制，现有的方法形成的磷化铟层均较厚，较厚的磷化铟层不利于散热，且要求的驱动电压较大，因此需要对磷化铟层进行减薄，形成厚度不大于1nm的磷化铟层。现有技术也公开了减薄磷化铟层的方法，所述方法具体包括：用氧气对磷化铟层进行灰化处理；以及在室温下，用1:1比例的稀硫酸和水为刻蚀液对灰化后的磷化铟层进行湿法刻蚀。湿法刻蚀的过程中会引入一些污染物，污染物会影响器件的性能；同时器件需要在干法和湿法两种操作空间之间运转，增加了工艺复杂程度及时间，也增加了器件被污染的几率。
因此，需要提供一种减薄化铟层的方法。
发明内容
本发明提供一种减薄化铟层的方法，所述方法通过将磷化铟层表面的一部分转化为富磷层，从而达到减薄磷化铟层的目的，所述富磷层容易除去，且去除过程中不容易产生污染物。
为解决上述问题，本发明实施例提供了一种减薄化铟层的方法，包括：
提供鳍部，所述鳍部的材料为铟镓砷；
提供磷化铟层，所述磷化铟层覆盖所述鳍部；
将所述磷化铟层表面的一部分转化成富磷层；以及
去除所述富磷层。
可选地，所述富磷层的形成工艺为干法刻蚀，所述干法刻蚀的气体为Cl2和Ar2。
可选地，所述干法刻蚀为化学干法刻蚀。
可选地，所述化学干法刻蚀的工艺参数包括：温度为-10～200℃，压力为5～500mTorr，功率为100～1000W，HCl的流量为10～200sccm，Ar2的流量为10～500sccm。
可选地，去除所述富磷层的工艺为干法刻蚀，所述干法刻蚀的气体为HBr。
可选地，所述干法刻蚀为化学干法刻蚀。
可选地，所述化学干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，HBr的流量为50～500sccm。
可选地，去除所述富磷层的方法包括：对所述富磷层进行O2处理；以及采用H2干法刻蚀去除所述氧气处理后的富磷层。
可选地，所述O2处理的方法为化学干法刻蚀。
可选地，所述O2处理的化学干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，O2的流量为10～200sccm。
可选地，所述干法刻蚀为化学干法刻蚀。
可选地，所述化学干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，H2的流量为50～500sccm。
可选地，形成所述富磷层和去除所述富磷层的步骤重复n次进行，所述n至少为2。
可选地，每次形成所述富磷层的厚度小于1nm。
可选地，所述减薄后的磷化铟层的厚度不大于1nm。
与现有技术相比，本发明技术方案具有以下优点：
本发明通过将磷化铟层表面的一部分转化为富磷层并去除该富磷层，从而达到减薄磷化铟层的目的，所述富磷层容易除去，且去除过程中不容易产生污染物；
进一步的，本发明去除富磷层的步骤采用干法刻蚀，刻蚀中污染物少，且减少了器件在干法和湿法刻蚀两种操作空间之间运转，节省了操作时间，也减少了器件被污染的几率；
进一步的，本发明中干法刻蚀采用化学干法刻蚀，化学干法刻蚀条件更温和，减少了等离子体对器件的破坏。
更进一步的，形成所述富磷层和去除所述富磷层的步骤，重复多次进行，增加了工艺工程的可控性，进一步的保证了器件的性能。
附图说明
图1是本发明实施例的减薄磷化铟层的方法的流程示意图；以及
图2至图7为本发明本发明实施例的减薄磷化铟层的过程的剖面结构示意图。
具体实施方式
由于在现有技术中，对磷化铟层进行减薄处理通常采用氧气对磷化铟层进行灰化处理；以及在室温下，用1:1比例的稀硫酸和水为刻蚀液对灰化后的磷化铟层进行湿法刻蚀。湿法刻蚀的过程中会引入一些污染物，污染物会影响器件的性能；同时器件需要在干法和湿法两种操作空间之间运转，增加了工艺复杂程度及时间，也增加了器件被污染的几率。本发明公开了一种新的减薄磷化铟层的方法，通过先将磷化铟层表面的一部分转化为富磷层，再去除富磷层，从而完成对磷化铟层的减薄过程。富磷层容易除去，且去除过程中不容易产生污染物。
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。本发明实施例首先提供了一种减薄磷化铟层的方法。请参考图1，图1是本发明实施例的减薄磷化铟层的方法的流程示意图，具体包括：
步骤S101，提供鳍部，所述鳍部的材料为铟镓砷；
步骤S103，提供磷化铟层，所述磷化铟层覆盖所述鳍部；
步骤S105，将所述磷化铟层表面的一部分转化成富磷层；
步骤S107，去除所述富磷层。
下面，结合器件的结构示意图具体说明本发明提供的方法。
图2至图6为本发明实施例的减薄磷化铟层的过程的剖面结构示意图。
首先执行步骤S101，提供鳍部，所述鳍部的材料为铟镓砷。
请参考图1和图2，提供半导体衬底200，在所述半导体衬底200上形成鳍部201。
所述衬底200为单层结构或多层堆叠结构。当所述衬底200为单层结构时，所述衬底100为硅衬底、锗衬底、硅锗衬底、碳化硅衬底、氮化镓衬底其中的一种。当所述衬底100为多层堆叠结构时，所述衬底100包括半导体衬底(未示出)和位于半导体衬底表面的一层或多层层间介质层(未示出)。
所述鳍部201的材料为铟镓砷。铟镓砷为III-V族元素，III-V族元素因具有能耗低的特点，因此提供了高的载流子迁移率。
所述鳍部沿垂直于所述鳍部的延伸方向的截面为矩形、梯形或梯形与矩形的组合。本实施例中所述鳍部沿垂直于所述鳍部的延伸方向的截面为梯形。
由于所述鳍部的形成工艺已为本领域技术人员所熟知，在此不再赘述。
执行步骤S103，提供磷化铟层，所述磷化铟层覆盖所述鳍部。
请参考图1和图3，提供磷化铟层203，所述磷化铟层203覆盖所述鳍部201。
所述磷化铟层203的形成工艺为本领域技术人员所述熟知的方法即可，并无特殊的限定。本发明有些实施例中采用如等离子溅射法、分子束外延法、电子束蒸发法、脉冲激光沉积法、磁控溅射沉积法等物理方法；有些实施例中采用金属有机化学气相沉积法。受工艺条件等因素的限制，上述这些工艺方法形成的磷化铟层203的厚度至少为几十纳米。本实施例以金属有机化学气相沉积法为例，所述磷化铟层203的厚度为30nm。为了得到较薄厚度的磷化铟层，则需要一些工艺处理过程对所述磷化铟层203进行减薄。
执行步骤S105，将所述磷化铟层表面的一部分转化成富磷层。
请参考图1和图4，所述磷化铟层203的表面一部分被转化为富磷层205。
所述富磷层205的形成工艺为干法刻蚀，所述干法刻蚀的气体为Cl2和Ar2。干法刻蚀过程中，所述磷化铟层表面一部分的铟被带走，在该部分剩余的就是主要成分为磷的富磷层205。未被所述干法刻蚀所影响的磷化铟层，即，减薄后的磷化铟层，以标号207标记。本实施例中所述干法刻蚀工艺为化学干法刻蚀。所述化学干法刻蚀的工艺参数包括：温度为-10～200℃，压力为5～500mTorr，功率为100～1000W，HCl的流量为10～200sccm，Ar2的流量为10～500sccm。化学干法刻蚀的工艺条件温和，能够减小刻蚀过程中对所述减薄后的磷化铟层207表面的损伤，保证FinFET的性能不受影响。
最后执行步骤S105，去除所述富磷层。
请参考图1和图5，去除所述富磷层205。
本发明有些实施例中，去除所述富磷层205的工艺为干法刻蚀，所述干法刻蚀的气体为HBr。参考图5，干法刻蚀过程中，所述富磷层205被除去，仅留下未被转化成富磷层的磷化铟层207，从而达到减薄所述磷化铟层203的目的。本实施例中所述干法刻蚀工艺为化学干法刻蚀。所述化学干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，HBr的流量为50～500sccm。化学干法刻蚀的工艺条件温和，能够减小刻蚀过程中对剩余的所述磷化铟层表面的损伤，保证FinFET的性能不受影响。
本发明有些实施例中所述减薄后的磷化铟层207的厚度不大于1nm。不大于1nm的磷化铟层散热效果好，且要求的驱动电压较小。
然后，在所述减薄后的磷化铟207表面形成横跨所述鳍部201的栅极结构。参考图6，所述栅极结构包括位于所述减薄后的磷化铟207上的栅介质层209和位于所述栅介质层209上的栅极211。所述栅极结构的形成方法已为本领域技术人员所熟知，在此不再赘述。
本发明的有些实施例还提供与上述实施例不同的去除所述富磷层的方法。具体地，去除所述富磷层205的工艺为对所述富磷层进行O2处理，然后采用H2干法刻蚀去除所述O2处理后的富磷层。参考图7，所述富磷层205被氧气处理后形成氧化后的富磷层205’，然后用氢气干法刻蚀去除所述氧化后的富磷层205’，从而达到减薄所述磷化铟层203的目的。本实施例中，去除所述富磷层205的工艺均为化学干法刻蚀。所述氧气处理过程中化学干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，O2的流量为10～200sccm；化学干法刻蚀去除所述氧化后的富磷层205’的工艺参数包括：压力为5～500mTorr，功率为100～1000W，H2的流量为50～500sccm。化学干法刻蚀的工艺条件温和，能够减小刻蚀过程中对剩余的所述磷化铟层表面的损伤，保证FinFET的性能不受影响。
在有些实施例中，形成所述富磷层的工艺和去除所述富磷层的工艺重复n次进行，n不小于2。形成富磷层的工艺过程中，温度和Ar2的流量会直接影响刻蚀速率，温度越高刻蚀速率越快，Ar2的流量越大刻蚀的速率也会越快，因此可以通过调整温度、Ar2的流量和刻蚀时间来控制刻蚀的厚度。每次形成的富磷层越薄，工艺过程重复的次数越多，越可以精确的控制减薄后的磷化铟层的厚度，且减少对减薄后的磷化铟层表面的破坏。本实施例中每次形成富磷层的厚度小于1nm。
综上，本发明实施例中通过将磷化铟层表面的一部分转化为富磷层，从而达到减薄磷化铟层的目的，所述富磷层容易除去，且去除过程中不容易产生污染物；
进一步的，本发明去除富磷层的步骤采用干法刻蚀，刻蚀中污染物少，且减少了器件在干法和湿法刻蚀两种操作空间之间运转，节省了操作时间，也减少了器件被污染的几率；
进一步的，本发明中干法刻蚀采用化学干法刻蚀，化学干法刻蚀条件更温和，减少了等离子体对器件的破坏。
更进一步的，形成所述富磷层和去除所述富磷层的步骤，重复多次进行，增加了工艺工程的可控性，进一步的保证了器件的性能；
本发明虽然已以较佳实施例公开如上，但其并不是用来限定本发明，任何本领域技术人员在不脱离本发明的精神和范围内，都可以利用上述揭示的方法和技术内容对本发明技术方案做出可能的变动和修改，因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化及修饰，均属于本发明技术方案的保护范围。
Claims (14)
1.一种减薄磷化铟层的方法，其特征在于，包括：
提供鳍部，所述鳍部的材料为铟镓砷；
提供磷化铟层，所述磷化铟层覆盖所述鳍部；
将所述磷化铟层表面的一部分转化成富磷层；以及
去除所述富磷层；
所述富磷层的形成工艺为干法刻蚀，所述干法刻蚀的气体为Cl2和Ar2。
2.如权利要求1所述的方法，其特征在于，所述干法刻蚀为化学干法刻蚀。
3.如权利要求2所述的方法，其特征在于，所述化学干法刻蚀的工艺参数包括：温度为-10～200℃，压力为5～500mTorr，功率为100～1000W，Cl2的流量为10～200sccm，Ar2的流量为10～500sccm。
4.如权利要求1所述的方法，其特征在于，去除所述富磷层的工艺为干法刻蚀，所述去除所述富磷层的干法刻蚀的气体为HBr。
5.如权利要求4所述的方法，其特征在于，所述去除所述富磷层的干法刻蚀为化学干法刻蚀。
6.如权利要求5所述的方法，其特征在于，所述化学干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，HBr的流量为50～500sccm。
7.如权利要求1所述的方法，其特征在于，去除所述富磷层的方法包括：
对所述富磷层进行O2处理；以及
采用H2干法刻蚀去除所述氧气处理后的富磷层。
8.如权利要求7所述的方法，其特征在于，所述O2处理的方法为化学干法刻蚀。
9.如权利要求8所述的方法，其特征在于，所述O2处理的化学干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，O2的流量为10～200sccm。
10.如权利要求8所述的方法，其特征在于，所述采用H2干法刻蚀为化学干法刻蚀。
11.如权利要求10所述的方法，其特征在于，所述采用H2干法刻蚀的工艺参数包括：压力为5～500mTorr，功率为100～1000W，H2的流量为50～500sccm。
12.如权利要求1所述的方法，其特征在于，形成所述富磷层和去除所述富磷层的步骤重复n次进行，所述n至少为2。
13.如权利要求12所述的方法，其特征在于，每次形成所述富磷层的厚度小于1nm。
14.如权利要求1所述的方法，其特征在于，所述减薄后的磷化铟层的厚度不大于1nm。
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