CN106486159B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
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- CN106486159B CN106486159B CN201610743715.5A CN201610743715A CN106486159B CN 106486159 B CN106486159 B CN 106486159B CN 201610743715 A CN201610743715 A CN 201610743715A CN 106486159 B CN106486159 B CN 106486159B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
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- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-168522 | 2015-08-28 | ||
JP2015168522A JP6533129B2 (ja) | 2015-08-28 | 2015-08-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106486159A CN106486159A (zh) | 2017-03-08 |
CN106486159B true CN106486159B (zh) | 2021-10-26 |
Family
ID=58095691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610743715.5A Active CN106486159B (zh) | 2015-08-28 | 2016-08-26 | 半导体器件 |
Country Status (3)
Country | Link |
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US (3) | US9824757B2 (ja) |
JP (1) | JP6533129B2 (ja) |
CN (1) | CN106486159B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6533129B2 (ja) | 2015-08-28 | 2019-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2018206452A (ja) | 2017-05-30 | 2018-12-27 | ルネサスエレクトロニクス株式会社 | 内容参照メモリ及び半導体装置 |
JP2019117678A (ja) * | 2017-12-27 | 2019-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10910056B2 (en) | 2018-02-22 | 2021-02-02 | Renesas Electronics Corporation | Semiconductor device |
JP2020047351A (ja) * | 2018-09-20 | 2020-03-26 | 株式会社東芝 | Camマクロ回路および半導体集積回路 |
CN109637571B (zh) * | 2018-12-21 | 2020-11-20 | 成都海光集成电路设计有限公司 | 三态内容可寻址存储器搜索线分割控制装置、系统和方法 |
TWI794510B (zh) * | 2019-06-12 | 2023-03-01 | 聯華電子股份有限公司 | 三元內容可定址記憶體單元 |
US10930348B1 (en) * | 2019-08-13 | 2021-02-23 | Hewlett Packard Enterprise Development Lp | Content addressable memory-encoded crossbar array in dot product engines |
US11894054B2 (en) | 2019-10-22 | 2024-02-06 | Mediatek Singapore Pte. Ltd. | Methods for writing ternary content addressable memory devices |
US11404121B2 (en) * | 2019-10-22 | 2022-08-02 | Mediatek Singapore Pte. Ltd. | Methods for writing ternary content addressable memory devices |
CN110993005B (zh) * | 2019-12-11 | 2021-03-26 | 海光信息技术股份有限公司 | 电路结构、芯片、训练方法及训练装置 |
US11133065B1 (en) * | 2020-03-06 | 2021-09-28 | Micron Technology, Inc. | Architecture for ternary content-addressable memory search |
US11599090B2 (en) * | 2020-09-30 | 2023-03-07 | Rockwell Automation Technologies, Inc. | System and method of network synchronized time in safety applications |
US11967377B2 (en) * | 2021-01-08 | 2024-04-23 | Mediatek Singapore Pte. Ltd. | Dynamically gated search lines for low-power multi-stage content addressable memory |
TWI744204B (zh) * | 2021-03-15 | 2021-10-21 | 瑞昱半導體股份有限公司 | 適用於內容可定址記憶體的遮蔽電路與預充電電路 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005228461A (ja) * | 2004-01-13 | 2005-08-25 | Hitachi Ulsi Systems Co Ltd | 半導体記憶装置 |
CN101859596A (zh) * | 2010-06-02 | 2010-10-13 | 中国科学院声学研究所 | 一种内容可寻址存储器 |
CN101989452A (zh) * | 2009-08-03 | 2011-03-23 | 瑞萨电子株式会社 | 内容可寻址存储器 |
US7940541B2 (en) * | 2008-05-21 | 2011-05-10 | Texas Instruments Incorporated | Bit cell designs for ternary content addressable memory |
CN104813405A (zh) * | 2012-12-26 | 2015-07-29 | 高通股份有限公司 | 用于三元内容可寻址存储器的伪nor单元 |
Family Cites Families (19)
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JP2585227B2 (ja) * | 1986-07-25 | 1997-02-26 | 株式会社日立製作所 | 半導体メモリ装置 |
KR950008676B1 (ko) * | 1986-04-23 | 1995-08-04 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 메모리 장치 및 그의 결함 구제 방법 |
JPH10275479A (ja) * | 1997-03-31 | 1998-10-13 | Kawasaki Steel Corp | 連想メモリおよびネットワークフレーム中継器 |
JP3478749B2 (ja) * | 1999-02-05 | 2003-12-15 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 連想メモリ(cam)のワードマッチラインのプリチャージ回路および方法 |
JP2002197873A (ja) * | 2000-12-27 | 2002-07-12 | Kawasaki Microelectronics Kk | 連想メモリ |
JP2003272386A (ja) | 2002-03-20 | 2003-09-26 | Mitsubishi Electric Corp | Tcamセル、tcamセルアレイ、アドレス検索メモリおよびネットワークアドレス検索装置 |
US20080006280A1 (en) * | 2004-07-20 | 2008-01-10 | Anthony Aliberto | Magnetic navigation maneuvering sheath |
KR101484499B1 (ko) * | 2005-02-14 | 2015-01-20 | 존슨 앤드 존슨 비젼 케어, 인코포레이티드 | 안과용 렌즈의 제조방법, 안과용 장치 및 콘택트 렌즈 |
JP4343859B2 (ja) * | 2005-02-17 | 2009-10-14 | 株式会社日立製作所 | 半導体装置 |
US7274581B1 (en) * | 2006-05-04 | 2007-09-25 | Texas Instruments Incorporated | Array fault testing approach for TCAMs |
US7414872B2 (en) * | 2006-09-12 | 2008-08-19 | Jinn-Shyan Wang | Segmented search line circuit device for content addressable memory |
US7760135B2 (en) * | 2007-11-27 | 2010-07-20 | Lockheed Martin Corporation | Robust pulse deinterleaving |
US7881090B2 (en) * | 2009-03-16 | 2011-02-01 | Netlogic Microsystems, Inc. | Content addressable memory (CAM) array capable of implementing read or write operations during search operations |
US8320148B1 (en) * | 2009-06-25 | 2012-11-27 | Adesto Technologies Corporation | PMC-based non-volatile CAM |
JP2011181147A (ja) * | 2010-03-02 | 2011-09-15 | Renesas Electronics Corp | 連想記憶装置 |
JP5893465B2 (ja) * | 2012-03-27 | 2016-03-23 | ルネサスエレクトロニクス株式会社 | 連想記憶装置 |
US9275735B2 (en) * | 2014-01-06 | 2016-03-01 | International Business Machines Corporation | Array organization and architecture to perform range-match operations with content addressable memory (CAM) circuits |
JP6533129B2 (ja) * | 2015-08-28 | 2019-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6592310B2 (ja) * | 2015-09-01 | 2019-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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2015
- 2015-08-28 JP JP2015168522A patent/JP6533129B2/ja active Active
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2016
- 2016-08-03 US US15/227,161 patent/US9824757B2/en active Active
- 2016-08-26 CN CN201610743715.5A patent/CN106486159B/zh active Active
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2017
- 2017-10-18 US US15/787,406 patent/US10068646B2/en active Active
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2018
- 2018-08-06 US US16/056,321 patent/US10366755B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005228461A (ja) * | 2004-01-13 | 2005-08-25 | Hitachi Ulsi Systems Co Ltd | 半導体記憶装置 |
US7940541B2 (en) * | 2008-05-21 | 2011-05-10 | Texas Instruments Incorporated | Bit cell designs for ternary content addressable memory |
CN101989452A (zh) * | 2009-08-03 | 2011-03-23 | 瑞萨电子株式会社 | 内容可寻址存储器 |
CN101859596A (zh) * | 2010-06-02 | 2010-10-13 | 中国科学院声学研究所 | 一种内容可寻址存储器 |
CN104813405A (zh) * | 2012-12-26 | 2015-07-29 | 高通股份有限公司 | 用于三元内容可寻址存储器的伪nor单元 |
Also Published As
Publication number | Publication date |
---|---|
US20170062051A1 (en) | 2017-03-02 |
US10366755B2 (en) | 2019-07-30 |
US20180350439A1 (en) | 2018-12-06 |
US20180040373A1 (en) | 2018-02-08 |
JP6533129B2 (ja) | 2019-06-19 |
US10068646B2 (en) | 2018-09-04 |
US9824757B2 (en) | 2017-11-21 |
CN106486159A (zh) | 2017-03-08 |
JP2017045495A (ja) | 2017-03-02 |
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