CN106469737A - 薄膜晶体管基板 - Google Patents
薄膜晶体管基板 Download PDFInfo
- Publication number
- CN106469737A CN106469737A CN201510513722.1A CN201510513722A CN106469737A CN 106469737 A CN106469737 A CN 106469737A CN 201510513722 A CN201510513722 A CN 201510513722A CN 106469737 A CN106469737 A CN 106469737A
- Authority
- CN
- China
- Prior art keywords
- thin film
- film transistor
- base plate
- transistor base
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 84
- 239000000463 material Substances 0.000 claims description 60
- 239000011241 protective layer Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- -1 fluorine silica glass (fluorinated silicate Chemical class 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 4
- 239000005360 phosphosilicate glass Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229920002521 macromolecule Polymers 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
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- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
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- 238000001039 wet etching Methods 0.000 description 6
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
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- 238000009740 moulding (composite fabrication) Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
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- DIKBFYAXUHHXCS-UHFFFAOYSA-N bromoform Chemical compound BrC(Br)Br DIKBFYAXUHHXCS-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
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- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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- 238000007654 immersion Methods 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
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- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
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- 229910017121 AlSiO Inorganic materials 0.000 description 2
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- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004990 Smectic liquid crystal Substances 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
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- 239000000956 alloy Substances 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003098 cholesteric effect Effects 0.000 description 2
- 235000012000 cholesterol Nutrition 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
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- 241000033695 Sige Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- JHFCVRNLWYSLOL-UHFFFAOYSA-N [P].[As].[In] Chemical compound [P].[As].[In] JHFCVRNLWYSLOL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005130 electrotropism Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 239000012774 insulation material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
本发明公开一种薄膜晶体管基板,包括:基板;至少一条信号线,设于基板上;修补线,设于信号线上,且电连接至该信号线;及遮光层,设于修补线上,其中遮光层完全覆盖修补线,且遮光层的面积大于修补线的面积。
Description
技术领域
本发明涉及薄膜晶体管基板,且特别是涉及一种具有修补线的薄膜晶体管基板。
背景技术
液晶显示装置近年来已经被大量应用在各式各样产品的显示元件上。液晶显示装置是利用液晶分子在不同排列状态下,对于光线具有不同的偏振或折射效果的特性来控制光线的穿透量,进而使液晶显示装置得以产生影像。传统扭转向列型(Twisted Nematic,TN)液晶显示装置,具有非常好的穿透特性,但受到液晶分子结构与光学特性的影响,相对其视角非常狭窄。
为了解决此问题,近来业者已开发出其它种形态的广视角液晶显示装置,例如平面电场切换(In-Plane Switching,简称IPS)液晶显示装置以及边缘电场切换(Fringe-Field Switching,简称FFS)液晶显示装置等具有广视角的液晶显示装置。
而上述显示装置包括一薄膜晶体管基板,且此薄膜晶体管基板包括数据线及/或栅极线。然而,由于制作工艺时候成膜、光刻及蚀刻等制造工艺的影响,数据线及/或栅极线容易发生断线或错误的电连接,导致线缺陷。而且当液晶面板分辨率提高时,由于开口率等因素的制约,数据线及/或栅极线变窄,更容易发生断线或电性不良现象。因此,为避免液晶面板生产由于线缺陷而导致良率下降,需要对数据线及/或栅极线的线缺陷进行修复。然而,目前经修复的薄膜晶体管基板并非各方面都令人满意。
因此,业界仍需一种具有更高制作工艺良率的经修复的薄膜晶体管基板。
发明内容
为解决上述问题,本发明提供一种薄膜晶体管基板,包括:基板;至少一条信号线,设于基板上;修补线,设于该信号线上,且电连接至该信号线;及遮光层,设于修补线上,其中遮光层完全覆盖修补线,且遮光层的面积大于修补线的面积。
为让本发明的特征、和优点能更明显易懂,下文特举出优选实施例,并配合所附的附图,作详细说明如下。
附图说明
图1为本发明实施例的薄膜晶体管基板的上视图;
图2A为本发明实施例的薄膜晶体管基板的上视图;
图2B为沿着图2A的线段2B-2B’所绘制的剖视图;
图2C为沿着图2A的线段2C-2C’所绘制的剖视图;
图3A为本发明实施例的薄膜晶体管基板的上视图;
图3B为沿着图3A的线段3B-3B’所绘制的剖视图;
图3C为沿着图3A的线段3C-3C’所绘制的剖视图;
图4A为本发明实施例的薄膜晶体管基板的上视图;
图4B为沿着图4A的线段4B-4B’所绘制的剖视图;
图4C为沿着图4A的线段4C-4C’所绘制的剖视图;
图4D为本发明实施例的薄膜晶体管基板的上视图;
图4E为沿着图4D的线段4E-4E’所绘制的剖视图;
图4F为沿着图4D的线段4F-4F’所绘制的剖视图;
图5为本发明另一实施例的薄膜晶体管基板的上视图;
图6为本发明又一实施例的薄膜晶体管基板的上视图;
图7为本发明再一实施例的薄膜晶体管基板的上视图;
图8为本发明一实施例的显示装置的剖视图。
符号说明
100 薄膜晶体管基板;
102 基板;
104 信号线;
106 电连接故障结构;
108 栅极线;
108E 栅极电极;
110 数据线;
110E 源极电极;
110A 隔离部分;
110B 第一部分;
110C 第二部分;
112 薄膜晶体管;
114 次像素;
116 栅极介电层;
118 半导体层;
120 漏极电极;
122 欧姆接触层;
124 保护层;
126 开口;
128 像素电极;
130 凹槽;
130B 底面;
132 接触孔;
132A 第一接触孔;
132B 第二接触孔;
134A 第一断开槽;
134B 第二断开槽;
136 绝缘材料;
138 修补线;
140 遮光层;
142 低介电常数材料层;
144 修补线;
146 电连接故障结构;
148 修补线;
150 凹槽;
152 电连接故障结构;
154 修补线;
156 凹槽;
200 薄膜晶体管基板;
300 薄膜晶体管基板;
400 薄膜晶体管基板;
500 显示装置;
600 对向基板;
700 显示介质;
2A 区域;
2C-2C’ 线段;
2B-2B’ 线段;
3C-3C’ 线段;
3B-3B’ 线段;
4C-4C’ 线段;
4B-4B’ 线段;
4F-4F’ 线段;
4E-4E’ 线段;
A1 方向;
A2 方向。
具体实施方式
以下针对本发明的薄膜晶体管基板作详细说明。应了解的是,以下的叙述提供许多不同的实施例或例子,用以实施本发明的不同样态。以下所述特定的元件及排列方式仅为简单描述本发明。当然,这些仅用以举例而非本发明的限定。此外,在不同实施例中可能使用重复的标号或标示。这些重复仅为了简单清楚地叙述本发明,不代表所讨论的不同实施例及/或结构之间具有任何关联性。再者,当述及一第一材料层位于一第二材料层上或之上时,包括第一材料层与第二材料层直接接触的情形。或者,也可能间隔有一或更多其它材料层的情形,在此情形中,第一材料层与第二材料层之间可能不直接接触。
必需了解的是,为特别描述或图示的元件可以此技术人士所熟知的各种形式存在。此外,当某层在其它层或基板“上”时,有可能是指“直接”在其它层或基板上,或指某层在其它层或基板上,或指其它层或基板之间夹设其它层。
此外,实施例中可能使用相对性的用语,例如“较低”或“底部”及“较高”或“顶部”,以描述图示的一个元件对于另一元件的相对关系。能理解的是,如果将图示的装置翻转使其上下颠倒,则所叙述在“较低”侧的元件将会成为在“较高”侧的元件。
在此,“约”、“大约”的用语通常表示在一给定值或范围的20%之内,优选是10%之内,且更佳是5%之内。在此给定的数量为大约的数量,意即在没有特定说明的情况下,仍可隐含“约”、“大约”的含义。
本发明实施例是利用一面积大于修补线面积的遮光层,以遮蔽修补后可能发生的漏光现象,并由此提升经修复后的薄膜晶体管基板的制作工艺良率。
图1为本发明实施例的薄膜晶体管基板100的上视图,参见图1,薄膜晶体管基板100包括基板102(可见图2B)以及设于此基板102上的至少一条信号线104,且其中一条信号线104具有电连接故障结构106。
详细而言,参见图2A,上述至少一条信号线104包括多条栅极线108及多条数据线110,且薄膜晶体管基板100包括薄膜晶体管112。此数据线110通过薄膜晶体管112提供源极信号至次像素114,而此栅极线108通过薄膜晶体管112提供扫描脉冲信号至次像素114,并配合上述源极信号一同控制次像素114。此外,此栅极线108沿着方向A1延伸,而大抵垂直(perpendicular)或正交(orthogonal)此栅极线延伸方向A1的方向为方向A2。而在一实施例中,数据线110可沿着方向A2延伸,并与此栅极线108大抵垂直(perpendicular)或正交(orthogonal)。此外,多条栅极线108及多条数据线110共同定义出上述次像素114。
参见图2B,此基板102可为透明基板,此透明基板可包括玻璃基材、陶瓷基材、塑胶基材或其它任何适合的透明基板。而上述栅极线108与数据线110的材料可包括铜、铝、钨、金、铬、镍、铂、钛、铱、铑、上述的合金、上述的组合或其它导电性佳的金属材料。在其它实施例中,上述栅极线108与数据线110的材料可为一非金属材料,只要使用的材料具有导电性即可。
此外,如图2C所示,栅极线108形成在基板102上。而栅极介电层116形成在基板102上且覆盖栅极线108。而数据线110形成在栅极介电层116上。
此栅极介电层116可为氧化硅、氮化硅、氮氧化硅、高介电常数(high-k)介电材料、或其它任何适合的介电材料、或上述的组合。此高介电常数(high-k)介电材料的材料可为金属氧化物、金属氮化物、金属硅化物、过渡金属氧化物、过渡金属氮化物、过渡金属硅化物、金属的氮氧化物、金属铝酸盐、锆硅酸盐、锆铝酸盐。例如,此高介电常数(high-k)介电材料可为LaO、AlO、ZrO、TiO、Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfO2、HfO3、HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、HfAlON、(Ba,Sr)TiO3(BST)、Al2O3、其它适当材料的其它高介电常数介电材料、或上述组合。此介电材料层可通过化学气相沉积法(CVD)或旋转涂布法形成,此化学气相沉积法例如可为低压化学气相沉积法(low pressure chemicalvapor deposition,LPCVD)、低温化学气相沉积法(low temperature chemicalvapor deposition,LTCVD)、快速升温化学气相沉积法(rapid thermal chemicalvapor deposition,RTCVD)、等离子体辅助化学气相沉积法(plasma enhancedchemical vapor deposition,PECVD)、原子层化学气相沉积法的原子层沉积法(atomic layer deposition,ALD)或其它常用的方法。
此外,如图2B所示,薄膜晶体管112可包括栅极电极108E、半导体层118、源极电极110E、漏极电极120和欧姆接触层122。栅极电极108E从栅极线108沿方向A2延伸。在一实施例中,栅极电极108E的材料可与栅极线108相同,且可通过同一道制成步骤形成。半导体层118形成在栅极电极108E上。具体而言,半导体层118形成在栅极介电层116上并与栅极电极108E重叠。
此半导体层118可包括可为元素半导体,包括硅、锗(germanium);化合物半导体,包括氮化镓(gallium nitride,GaN)、碳化硅(silicon carbide)、砷化镓(gallium arsenide)、磷化镓(gallium phosphide)、磷化铟(indium phosphide)、砷化铟(indium arsenide)及/或锑化铟(indium antimonide);合金半导体,包括硅锗合金(SiGe)、磷砷镓合金(GaAsP)、砷铝铟合金(AlInAs)、砷铝镓合金(AlGaAs)、砷铟镓合金(GaInAs)、磷铟镓合金(GaInP)及/或磷砷铟镓合金(GaInAsP)或上述材料的组合。此外,在一实施例中,此半导体层118可为未掺杂的半导体层。然而,在其它实施例中,此半导体层118也可为掺杂的半导体层,例如掺杂的P型或N型半导体层。
源极电极110E从数据线110延伸出,并与部分半导体层118重叠。漏极电极120与源极电极110E间隔开预定距离并沿第一方向A1延伸。漏极电极120也与部分半导体层118重叠。在一实施例中,漏极电极120与源极电极110E的材料可与数据线110相同,且漏极电极120、源极电极110E与数据线110可通过同一道制成步骤形成。欧姆接触层122形成在半导体层118和源极电极110E之间,以及半导体层118和漏极电极120之间。此欧姆接触层122可包括高离子掺杂的非晶硅(例如n+a-Si)。
此薄膜晶体管基板100还包括保护层124,此保护层124形成在至少一条信号线104上。详细而言,此保护层124形成在栅极介电层116上并覆盖栅极线108、数据线110和薄膜晶体管112。保护层124防止薄膜晶体管112被物理或化学地损坏。
该保护层124的材质可为有机的绝缘材料(光感性树脂)或无机的绝缘材料(氮化硅、氧化硅、氮氧化硅、碳化硅、氧化铝、或上述材质的组合),可用来隔绝数据线110、源极电极110E、栅极线108、及漏极电极120与空气或水气的接触。
此保护层124具有开口126露出漏极电极120。而像素电极128系形成在保护层124上并通过开口126电连接至漏极电极120。
此像素电极128包括透明导电材料,例如为铟锡氧化物(ITO)氧化锡(TO)、氧化铟锌(IZO)、氧化铟镓锌(IGZO)、氧化铟锡锌(ITZO)、氧化锑锡(ATO)、氧化锑锌(AZO)、上述的组合或其它任何适合的透明导电氧化物材料。
在图1中,以电连接故障结构106形成在栅极线108与数据线110的交会处的实施例作说明。如图2C所示,原本应电性绝缘的栅极线108与数据线110在其交会处因电连接故障结构106而电连接。
接着,参见图3A~图3C,图3A也为图1的区域3A的放大图,而图3B为沿着图3A的线段3B-3B’所绘制的薄膜晶体管112的剖视图,图3C为沿着图3A的线段3C-3C’所绘制的栅极线108与数据线110交会处的剖视图。如图3B所示,在保护层124中形成凹槽130。此凹槽130仅部分延伸于保护层124中,而未贯穿保护层124,也没有露出栅极线108、源极电极110E与数据线110。
此凹槽130可通过将激光光束照射到保护层124上以部分移除保护层124来形成。此激光光束可包括连续波(continuous wave:CW)激光光束。激光光束的波长可以为约340至约360nm。
或者,在其它一些实施例中,此凹槽130可通过蚀刻步骤形成。此蚀刻步骤包括干蚀刻、湿蚀刻或上述的组合。此湿蚀刻可包括浸洗蚀刻(immersionetching)、喷洗蚀刻(spray etching)、上述的组合、或其它适合的干蚀刻。此干蚀刻步骤包括电容耦合等离子体蚀刻、感应耦合型等离子体蚀刻、螺旋等离子体蚀刻、电子回旋共振等离子体蚀刻、上述的组合、或其它适合的干蚀刻。此干蚀刻步骤使用的气体可包括惰性气体、含氟气体、含氯气体、含溴气体、含碘气体、上述气体的组合或其它任何适合的气体。在某些实施例中,此干蚀刻步骤使用的气体包括Ar、CF4、SF6、CH2F2、CHF3、C2F6、Cl2、CHCl3、CCl4、HBr、CHBr3、BF3、BCl3、上述气体的组合或其它任何适合的气体。在其它实施例中,干蚀刻步骤使用的气体可更包括或其组合。
此外,如图3A所示,在一些实施例中,凹槽130可与邻近电连接故障结构106的四个次像素114重叠。然而,在其它实施例中,此凹槽130也可仅与邻近电连接故障结构106的其中一个、二个或三个次像素114重叠。
此外,在一些实施例中,由于形成凹槽130时,会一并将其内的像素电极128移除,故凹槽130所对应的区域内不具有像素电极128。
图4A~图4F为修复电连接故障结构所造成的故障的方法,其中图4A~图4C绘示此修复方法的第一步骤,而图4D~图4F绘示此修复方法的第二步骤。图4A也为图1的区域4A的放大图,而图4B为沿着图4A的线段4B-4B’所绘制的薄膜晶体管112的剖视图,图4C为沿着图4A的线段4C-4C’所绘制的栅极线108与数据线110交会处的剖视图。如图4C所示,在电连接故障结构106的两侧分别形成第一接触孔132A及第二接触孔132B,此第一接触孔132A及第二接触孔132B自凹槽130的底面130B向下延伸并露出具有电连接故障结构106的信号线104的一部分。例如,在此实施例中,第一接触孔132A及第二接触孔132B露出具有电连接故障结构106的数据线110的一部分。
此第一接触孔132A及第二接触孔132B可通过将激光光束照射到保护层124上以部分移除保护层124来形成。此激光光束可包括连续波(continuous wave:CW)激光光束。激光光束的波长可以为约340至约360nm。此激光光束可包括连续波(continuous wave:CW)激光光束。激光光束的波长可以为约340至约360nm。
或者,在其它一些实施例中,此第一接触孔132A及第二接触孔132B可通过蚀刻步骤形成。此蚀刻步骤包括干蚀刻、湿蚀刻或上述的组合。此湿蚀刻可包括浸洗蚀刻(immersion etching)、喷洗蚀刻(spray etching)、上述的组合、或其它适合的干蚀刻。此干蚀刻步骤包括电容耦合等离子体蚀刻、感应耦合型等离子体蚀刻、螺旋等离子体蚀刻、电子回旋共振等离子体蚀刻、上述的组合、或其它适合的干蚀刻。此干蚀刻步骤使用的气体可包括惰性气体、含氟气体、含氯气体、含溴气体、含碘气体、上述气体的组合或其它任何适合的气体。在某些实施例中,此干蚀刻步骤使用的气体包括Ar、CF4、SF6、CH2F2、CHF3、C2F6、Cl2、CHCl3、CCl4、HBr、CHBr3、BF3、BCl3、上述气体的组合或其它任何适合的气体。在其它实施例中,干蚀刻步骤使用的气体可更包括或其组合。
接着,在电连接故障结构106的两侧的数据线110上分别形成第一断开槽134A与第二断开槽134B。此第一断开槽134A与第二断开槽134B都自凹槽130的底面130B向下延伸并完全切断数据线110,以将数据线110分离成具有电连接故障结构106的隔离部分110A、以及分别设于此隔离部分110A的相对侧的第一部分110B与第二部分110C。
详细而言,第一断开槽134A断开并电性隔离隔离部分110A与第一部分110B,而第二断开槽134B断开并电性隔离隔离部分110A与第二部分110C。且上述第一接触孔132A及第二接触孔132B分别对应数据线110的第一部分110B与第二部分110C设置。亦即,此第一接触孔132A及第二接触孔132B分别露出数据线110的第一部分110B与第二部分110C。
可通过将激光光束照射到保护层124及数据线110上以移除保护层124及数据线110来形成第一断开槽134A与第二断开槽134B。此激光光束可包括脉冲激光光束。在一些实施例中,脉冲激光光束的波长可以为大约1063nm、大约532nm、或大约355nm。
或者,在其它一些实施例中,此第一断开槽134A与第二断开槽134B可通过蚀刻步骤形成。此蚀刻步骤包括干蚀刻、湿蚀刻或上述的组合。此湿蚀刻可包括浸洗蚀刻(immersion etching)、喷洗蚀刻(spray etching)、上述的组合、或其它适合的干蚀刻。此干蚀刻步骤包括电容耦合等离子体蚀刻、感应耦合型等离子体蚀刻、螺旋等离子体蚀刻、电子回旋共振等离子体蚀刻、上述的组合、或其它适合的干蚀刻。此干蚀刻步骤使用的气体可包括惰性气体、含氟气体、含氯气体、含溴气体、含碘气体、上述气体的组合或其它任何适合的气体。在某些实施例中,此干蚀刻步骤使用的气体包括Ar、CF4、SF6、CH2F2、CHF3、C2F6、Cl2、CHCl3、CCl4、HBr、CHBr3、BF3、BCl3、上述气体的组合或其它任何适合的气体。在其它实施例中,干蚀刻步骤使用的气体可更包括或其组合。
需注意的是,形成凹槽、接触孔与断开槽的顺序并无固定。例如,在其它实施例中,也可先形成接触孔,再形成凹槽。或者,在其它实施例中,也可先形成断开槽,再形成接触孔,再形成凹槽。因此,本发明的范围并不以图4A~图4C所示的实施例为限。
接着,参见图4D~图4F,其绘示修复电连接故障结构所造成的故障的方法的第二步骤。图4D也为图1的区域4D的放大图,而图4E为沿着图4D的线段4E-4E’所绘制的薄膜晶体管112的剖视图,图4F为沿着图4D的线段4F-4F’所绘制的栅极线108与数据线110交会处的剖视图。如图4F所示,在第一断开槽134A与第二断开槽134B中形成绝缘材料136。绝缘材料136可为氧化硅、氮化硅、氮氧化硅、上述的组合、或其它任何适合的材料。
此绝缘材料136完全覆盖第一断开槽134A与第二断开槽134B中的数据线110的侧壁,以防止隔离部分110A与第一部分110B、或隔离部分110A与第二部分110C之间产生电连接。
接着,在信号线104上形成修补线138。此修补线138电连接至具有电连接故障结构106的信号线104(例如此实施例的数据线110)。详细而言,此修补线138设于凹槽130内,且通过接触孔132A及132B电连接至具有电连接故障结构106的信号线104。
例如,在此实施例中,修补线138电连接至数据线110的第一部分110B与第二部分110C,以使数据线110本身无断路,且同时与栅极线108电性绝缘。
此修补线138的材料可包括钨(W)、钼(Mo)、镍(Ni)、铬(Cr)、铁(Fe)、或其它任何适合的导电材料。此修补线138可通过激光化学气相沉积(CVD)方法形成。激光CVD方法部分地照射激光光束到目标上从而在激光光束照射处沉积气化材料。
在一些实施例中,此修补线138可为U字型,如图4D所示。然而,然而,在其它实施例中,此修补线138也可具有其它形状。
接着,在修补线138上形成遮光层140。此遮光层140完全覆盖修补线138,且如图4D及图4F所示,此遮光层140的面积大于修补线138的面积。
由于此遮光层140的面积大于修补线138的面积,故可完全遮蔽由修补线所造成的漏光等缺陷,提升经修复后的薄膜晶体管基板的制作工艺良率。
此遮光层140的材料包括高介电常数材料、金属、黑色光致抗蚀剂、黑色印刷油墨、黑色树脂。此高介电常数(high-k)介电材料的材料可为金属氧化物、金属氮化物、金属硅化物、过渡金属氧化物、过渡金属氮化物、过渡金属硅化物、金属的氮氧化物、金属铝酸盐、锆硅酸盐、锆铝酸盐。例如,此高介电常数(high-k)介电材料可为LaO、AlO、ZrO、TiO、Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfO2、HfO3、HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、HfAlON、(Ba,Sr)TiO3(BST)、Al2O3、其它适当材料的其它高介电常数介电材料、或上述组合。
此外,如图4D、图4F所示,修补线138未直接接触凹槽130的侧壁,易言之,修补线138和凹槽130的侧壁之间具有间隙。而遮光层140填入于凹槽130内,并直接接触凹槽130的侧壁,且更填入修补线138与凹槽130侧壁之间的间隙内。
继续参见图4D~图4F,可于遮光层140之后更形成一设于遮光层140上的低介电常数材料层142。此低介电常数材料层142的介电常数低于遮光层140的介电常数。此低介电常数材料层142的材料包括磷硅玻璃(phosphosilicate glass;PSG)、硼磷硅玻璃(borophosphosilicate glass;BPSG)、氟硅玻璃(fluorinated silicate glass;FSG)、碳氧化硅(SiOxCy)、旋涂式玻璃(Spin-On-Glass)、旋涂式高分子(Spin-On-Polymers)、碳化硅材料、前述的化合物、前述的复合材料、前述的组合、或其它任何适合的低介电常数材料。
此外,如图4D、图4F所示,低介电常数材料层142填入于凹槽130内,且直接接触凹槽130的侧壁。且在一些实施例中,由于遮光层140与低介电常数材料层142都填入于凹槽130内,故自上视图观察时,遮光层140与低介电常数材料层142具有相同的形状。
由于遮光层的介电常数较高,故可能会因为修补线上的电流而产生感应电位。因此,若修补线上仅有遮光层,则可能因上述感应电位而造成漏电流或漏光的缺陷。因此,在遮光层上再形成一层低介电常数材料层,可防止上述漏电流或漏光的缺陷,更进一步提升经修复后的薄膜晶体管基板的制作工艺良率。
另外,若在凹槽内形成有像素电极,也可能会因为修补线上的电流而产生感应电位,并造成漏电流或漏光的缺陷。故像素电极设于凹槽所对应的区域之外,也可防止上述漏电流或漏光的缺陷,更进一步提升经修复后的薄膜晶体管基板的制作工艺良率。
继续参照图4F,本发明提供一种薄膜晶体管基板100,其包括基板102以及设于基板102上的至少一条信号线104,此至少一条信号线104包括多条栅极线108及多条数据线110,且其中一条信号线104具有电连接故障结构106。此薄膜晶体管基板100还包括设于信号线104上的修补线138,且此修补线138电连接至具有电连接故障结构106的该信号线104。此薄膜晶体管基板100还包括设于修补线138上的遮光层140,此遮光层140完全覆盖修补线138,且遮光层140的面积大于修补线138的面积。
此外,此薄膜晶体管基板100还包括设于遮光层140上的低介电常数材料层142。此外,此薄膜晶体管基板100还包括设于至少一条信号线104上的保护层124、设于保护层124上的像素电极128。此薄膜晶体管基板100还包括设设于保护层124中的凹槽130,及自凹槽130的底面向下延伸并露出具有电连接故障结构106的该信号线104的一部分的接触孔132A与132B。且修补线138设于凹槽130内,且通过接触孔132电连接至具有电连接故障结构106的该信号线104。此外,像素电极128设于凹槽130所对应的区域之外。
应注意的是,除上述图4D所示的实施例以外,本发明的修补线也可有其它图案,如图5的实施例所示。本发明的范围并不以图4D所示的实施例为限。
应注意的是,后文中与前文相同或相似的元件或膜层将以相同或相似的标号表示,其材料、制造方法与功能都与前文所述相同或相似,故此部分在后文中将不再赘述。
图5为本发明另一实施例的薄膜晶体管基板200的上视图。图5所示的实施例与前述图4D的实施例的差别在于修补线144为长条型,且横跨第一断开槽134A与第二断开槽134B。修补线144与数据线110大抵平行,且与数据线110重叠。
应注意的是,除上述图1~图6所示的实施例以外,本发明的电连接故障结构也可形成于其它位置,如图7~图8的实施例所示。本发明的范围并不以图1~图6所示的实施例为限。
图6为本发明另一实施例的薄膜晶体管基板300的上视图。图6所示的实施例与前述图1~图6的实施例的差别在于电连接故障结构146形成于其中一条数据线110上,其为数据线110上的一断线,且修补线148为长条型,其与数据线110大抵平行,且与数据线110重叠。此修补线148电连接数据线110被电连接故障结构146断开的两部分。
此外,在此实施例中,凹槽150仅与邻近电连接故障结构146的两个次像素114重叠。
图7为本发明另一实施例的薄膜晶体管基板400的上视图。图7所示的实施例与前述图1~图7的实施例的差别在于电连接故障结构152形成于其中一条栅极线108上,其为栅极线108上的一断线,且修补线154为长条型,其与栅极线108大抵平行,且与栅极线108重叠。此修补线154电连接栅极线108被电连接故障结构152断开的两部分。
此外,在此实施例中,凹槽156仅与邻近电连接故障结构152的两个次像素114重叠。
此外,本发明还提供具有上述薄膜晶体管基板100的显示装置500,如图8所示。图8的显示装置500包括本发明的薄膜晶体管基板100、与此薄膜晶体管基板100相对设置的对向基板600、以及设于薄膜晶体管基板100与对向基板600之间的显示介质700。需注意的是,上述显示装置也可包括前述薄膜晶体管基板200、300及400。
此对向基板600可为一彩色滤光基板、一透明基板、或其它任何适合的基板。上述彩色滤光基板可包括一透明基板以及设于此透明基板上的彩色滤光层。此透明基板可包括玻璃基板、陶瓷基板、塑胶基板或其它任何适合的透明基板。
显示介质700例如可为液晶材料,而此液晶材料可为向列型液晶(nematic)、层列型液晶(smectic)、胆固醇液晶(cholesteric)、蓝相液晶(Blue phase)或其它任何适合的液晶材料。
显示装置500可为液晶显示器,例如为薄膜晶体管液晶显示器。或者,此液晶显示器可为扭转向列(Twisted Nematic,TN)型液晶显示器、超扭转向列(Super Twisted Nematic,STN)型液晶显示器、双层超扭转向列(Double layerSuper Twisted Nematic,DSTN)型液晶显示器、垂直配向(Vertical Alignment,VA)型液晶显示器、水平电场效应(In-Plane Switching,IPS)型液晶显示器、胆固醇(Cholesteric)型液晶显示器、蓝相(Blue Phase)型液晶显示器或其它任何适合的液晶显示器。
需注意的是,除上述实施例所举的电连接故障结构的例子以外,本发明的电连接故障结构也可有其它结构。例如,本发明的电连接故障结构可为数据线与共同电极间产生短路的结构、栅极线与共同电极间产生短路的结构、数据线与另一数据线间产生短路的结构、数据线与栅极线间产生短路的结构、数据线与像素电极间产生短路的结构、栅极线与像素电极间产生短路的结构、数据线上的断路、或栅极线上的断路等等。因此,本发明的范围并不以上述所示的实施例为限。
综上所述,由于本发明的遮光层的面积大于修补线的面积,故可完全遮蔽由修补线所造成的漏光等缺陷,以提升经修复后的薄膜晶体管基板的制作工艺良率。且于遮光层上再形成一层低介电常数材料层,可防止漏电流或漏光的缺陷,更进一步提升经修复后的薄膜晶体管基板的制作工艺良率。
虽然结合以上实施例公开了本发明,但应该了解的是,任何所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作更动、替代与润饰。此外,本发明的保护范围并未局限于说明书内所述特定实施例中的制作工艺、机器、制造、物质组成、装置、方法及步骤,任何所属技术领域中具有通常知识者可从本发明揭示内容中理解现行或未来所发展出的制作工艺、机器、制造、物质组成、装置、方法及步骤,只要可以在此处所述实施例中实施大抵相同功能或获得大抵相同结果都可根据本发明使用。因此,本发明的保护范围包括上述制作工艺、机器、制造、物质组成、装置、方法及步骤。另外,每一权利要求构成个别的实施例,且本发明的保护范围也包括各个权利要求及实施例的组合。
Claims (10)
1.一种薄膜晶体管基板,包括:
基板;
至少一信号线,设于该基板上;
修补线,设于该信号线上,且电连接至该信号线;及
遮光层,设于该修补线上,其中该遮光层覆盖该修补线,且该遮光层的面积大于该修补线的面积。
2.如权利要求1所述的薄膜晶体管基板,还包括:
低介电常数材料层,设于该遮光层上。
3.如权利要求2所述的薄膜晶体管基板,还包括:
保护层,设于该信号线上;
像素电极,设于该保护层上;
凹槽,设于该保护层中;及
接触孔,自该凹槽的一底面向下延伸并露出该信号线的一部分,
其中该修补线设于该凹槽内,且通过该接触孔电连接至该信号线,且该修补线和该凹槽的侧壁之间具有一间隙。
4.如权利要求3所述的薄膜晶体管基板,其中该遮光层与该低介电常数材料层设于该凹槽中,且该遮光层与该低介电常数材料层都直接接触该凹槽的侧壁。
5.如权利要求3所述的薄膜晶体管基板,其中该像素电极设于该凹槽所对应的区域之外。
6.如权利要求3所述的薄膜晶体管基板,其中该薄膜晶体管基板具有多个次像素,且该凹槽与至少一该多个次像素重叠。
7.如权利要求1所述的薄膜晶体管基板,其中该遮光层的材料包括高介电常数材料、金属、黑色光致抗蚀剂、黑色印刷油墨、黑色树脂。
8.如权利要求1所述的薄膜晶体管基板,其中该低介电常数材料层的材料包括磷硅玻璃(phosphosilicate glass;PSG)、硼磷硅玻璃(borophosphosilicateglass;BPSG)、氟硅玻璃(fluorinated silicate glass;FSG)、碳氧化硅(SiOxCy)、旋涂式玻璃(Spin-On-Glass)、旋涂式高分子(Spin-On-Polymers)、碳化硅材料、前述的化合物、前述的复合材料或前述的组合。
9.如权利要求1所述的薄膜晶体管基板,其中该信号线具有一电连接故障结构。
10.如权利要求1所述的薄膜晶体管基板,其中该信号线为栅极线或数据线。
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CN110568678A (zh) * | 2019-09-26 | 2019-12-13 | 深圳市华星光电技术有限公司 | 显示面板 |
CN110764289A (zh) * | 2019-10-29 | 2020-02-07 | 深圳市华星光电技术有限公司 | 液晶面板修补方法 |
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