CN106133536B - 集成电路动态去老化 - Google Patents

集成电路动态去老化 Download PDF

Info

Publication number
CN106133536B
CN106133536B CN201580017723.5A CN201580017723A CN106133536B CN 106133536 B CN106133536 B CN 106133536B CN 201580017723 A CN201580017723 A CN 201580017723A CN 106133536 B CN106133536 B CN 106133536B
Authority
CN
China
Prior art keywords
aging
delay
input
output
delay chain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580017723.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN106133536A (zh
Inventor
J·刘
J·S·伊布拉希莫维奇
J·C·迪范德佛
C·奥永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN106133536A publication Critical patent/CN106133536A/zh
Application granted granted Critical
Publication of CN106133536B publication Critical patent/CN106133536B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B11/00—Automatic controllers
    • G05B11/01—Automatic controllers electric
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2882—Testing timing characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31725—Timing aspects, e.g. clock distribution, skew, propagation delay
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0315—Ring oscillators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201580017723.5A 2014-04-01 2015-03-04 集成电路动态去老化 Expired - Fee Related CN106133536B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461973765P 2014-04-01 2014-04-01
US61/973,765 2014-04-01
US14/507,679 2014-10-06
US14/507,679 US20150277393A1 (en) 2014-04-01 2014-10-06 Integrated circuit dynamic de-aging
PCT/US2015/018785 WO2015153048A1 (en) 2014-04-01 2015-03-04 Integrated circuit dynamic de-aging

Publications (2)

Publication Number Publication Date
CN106133536A CN106133536A (zh) 2016-11-16
CN106133536B true CN106133536B (zh) 2019-09-13

Family

ID=54190208

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580017723.5A Expired - Fee Related CN106133536B (zh) 2014-04-01 2015-03-04 集成电路动态去老化

Country Status (6)

Country Link
US (1) US20150277393A1 (enExample)
EP (1) EP3127239B1 (enExample)
JP (1) JP2017517873A (enExample)
KR (1) KR20160140667A (enExample)
CN (1) CN106133536B (enExample)
WO (1) WO2015153048A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9465373B2 (en) 2013-09-17 2016-10-11 International Business Machines Corporation Dynamic adjustment of operational parameters to compensate for sensor based measurements of circuit degradation
US9780793B2 (en) 2016-01-06 2017-10-03 Altera Corporation Methods and apparatuses for offsetting aging in pass transistors
CN106569120B (zh) * 2016-10-26 2019-01-22 宁波大学 一种对温度不敏感的检测集成电路老化状态传感器
US10128248B1 (en) 2017-07-14 2018-11-13 Intel Corporation Aging tolerant apparatus
US10666242B1 (en) * 2017-10-05 2020-05-26 Cadence Design Systems, Inc. Circuits and methods for reducing asymmetric aging effects of devices
CN108627760B (zh) * 2018-05-15 2020-07-14 中国空间技术研究院 一种fpga芯片自激励变频动态老炼电路
CN109856525A (zh) * 2018-11-07 2019-06-07 宁波大学 一种基于查找表的电路老化检测传感器
US11402413B1 (en) 2018-12-12 2022-08-02 Marvell Asia Pte, Ltd. Droop detection and mitigation
US11545987B1 (en) * 2018-12-12 2023-01-03 Marvell Asia Pte, Ltd. Traversing a variable delay line in a deterministic number of clock cycles
US11545981B1 (en) 2018-12-31 2023-01-03 Marvell Asia Pte, Ltd. DLL-based clocking architecture with programmable delay at phase detector inputs
CN109766233B (zh) * 2019-03-08 2023-04-07 江南大学 一种感知处理器nbti效应延时的检测电路及其方法
FR3107983B1 (fr) * 2020-03-05 2022-05-27 St Microelectronics Sa Dispositif de surveillance d'un circuit digital
CN112444732B (zh) * 2020-11-10 2023-05-05 海光信息技术股份有限公司 一种芯片老化状态监测电路、方法、芯片及服务器
CN112698181B (zh) * 2020-12-07 2021-09-21 电子科技大学 一种状态可配置的原位老化传感器系统
US11462294B2 (en) * 2020-12-14 2022-10-04 Advanced Micro Devices, Inc. Mission mode Vmin prediction and calibration
CN112885387A (zh) * 2021-01-19 2021-06-01 长鑫存储技术有限公司 保护电路和存储器
US11935579B2 (en) 2021-01-19 2024-03-19 Changxin Memory Technologies, Inc. Protection circuit and memory
US12153086B2 (en) * 2022-02-05 2024-11-26 Microchip Technology Incorporated System and method to fix min-delay violation post fabrication
US11927612B1 (en) 2022-04-07 2024-03-12 Marvell Asia Pte Ltd Digital droop detector
US12244312B2 (en) * 2022-12-05 2025-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Low noise ring oscillator devices and methods
WO2025002191A1 (zh) * 2023-06-28 2025-01-02 华为技术有限公司 计算机系统的供电方法及相关装置
WO2025002985A1 (de) * 2023-06-29 2025-01-02 HELLA GmbH & Co. KGaA Anordnung mit mitteln zur ermittlung des gesundheitszustandes und/oder der alterung von komponenten eines schaltkreises oder an den schaltkreis angeschlossener komponenten

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1608342A (zh) * 2001-11-02 2005-04-20 摩托罗拉公司 级联的延迟锁定环路
CN1610835A (zh) * 2001-07-02 2005-04-27 英特尔公司 改进的集成电路老化方法和设备
US6903564B1 (en) * 2003-11-12 2005-06-07 Transmeta Corporation Device aging determination circuit
US20050134394A1 (en) * 2003-12-23 2005-06-23 Liu Jonathan H. On-chip transistor degradation monitoring
US20060223201A1 (en) * 2005-03-31 2006-10-05 Liu Jonathan H Body bias compensation for aged transistors
CN101027766A (zh) * 2004-09-02 2007-08-29 松下电器产业株式会社 半导体集成电路器件及其检测方法、半导体晶片、以及老化检测设备
WO2010038330A1 (ja) * 2008-09-30 2010-04-08 パナソニック株式会社 半導体集積回路および電子機器
US20110102064A1 (en) * 2009-10-30 2011-05-05 Date Jan Willem Noorlag Electronic Age Detection Circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126365B2 (en) * 2002-04-16 2006-10-24 Transmeta Corporation System and method for measuring negative bias thermal instability with a ring oscillator
US8549363B2 (en) * 2010-01-08 2013-10-01 International Business Machines Corporation Reliability and performance of a system-on-a-chip by predictive wear-out based activation of functional components
JP2011196855A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 半導体集積回路

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610835A (zh) * 2001-07-02 2005-04-27 英特尔公司 改进的集成电路老化方法和设备
CN1608342A (zh) * 2001-11-02 2005-04-20 摩托罗拉公司 级联的延迟锁定环路
US6903564B1 (en) * 2003-11-12 2005-06-07 Transmeta Corporation Device aging determination circuit
US20050134394A1 (en) * 2003-12-23 2005-06-23 Liu Jonathan H. On-chip transistor degradation monitoring
CN101027766A (zh) * 2004-09-02 2007-08-29 松下电器产业株式会社 半导体集成电路器件及其检测方法、半导体晶片、以及老化检测设备
US20060223201A1 (en) * 2005-03-31 2006-10-05 Liu Jonathan H Body bias compensation for aged transistors
WO2010038330A1 (ja) * 2008-09-30 2010-04-08 パナソニック株式会社 半導体集積回路および電子機器
US20110102064A1 (en) * 2009-10-30 2011-05-05 Date Jan Willem Noorlag Electronic Age Detection Circuit

Also Published As

Publication number Publication date
JP2017517873A (ja) 2017-06-29
WO2015153048A1 (en) 2015-10-08
KR20160140667A (ko) 2016-12-07
EP3127239B1 (en) 2018-12-05
US20150277393A1 (en) 2015-10-01
EP3127239A1 (en) 2017-02-08
CN106133536A (zh) 2016-11-16

Similar Documents

Publication Publication Date Title
CN106133536B (zh) 集成电路动态去老化
US6903564B1 (en) Device aging determination circuit
US9714966B2 (en) Circuit aging sensor
US9158324B2 (en) Substrate bias control circuit
CN108475101B (zh) 数字欠压检测和控制的方法和装置
US7282937B2 (en) On-chip frequency degradation compensation
US8339190B2 (en) Semiconductor integrated circuit and electronic device
JP5706007B2 (ja) オンチップ電圧調整器を有する半導体デバイス
US10461721B2 (en) Semiconductor apparatus, degradation value determination system and processing system
KR101999076B1 (ko) 온칩 파라미터 측정
CN108027403B (zh) 集成电路以及用于补偿集成电路中的电路老化的方法
CN107817871B (zh) 实时时钟的频率偏移校正精确度
US8008967B2 (en) Power supply voltage adjusting device
US9400308B2 (en) Multi-domain heterogeneous process-voltage-temperature tracking for integrated circuit power reduction
CN103219038A (zh) 振荡器自动调节方法及使用该方法的半导体器件
US10411683B2 (en) Information processing device, information processing method, and computer-readable recording medium
US8018240B2 (en) Apparatus, circuit and method of monitoring leakage current characteristics
CN104320136B (zh) 一种利用全数字标准单元实现的时钟信号生成器
US20160072483A1 (en) Semiconductor device and method of controlling semiconductor device
US9882564B1 (en) In line critical path delay measurement for accurate timing indication for a first fail mechanism
JP5890998B2 (ja) 半導体装置および電源供給方法
TWI707220B (zh) 電壓控制電路和電壓控制方法
EP4283314B1 (en) On-chip capacitance measurement method and apparatus

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190913

Termination date: 20210304