CN106129077B - 成像装置和电子设备 - Google Patents

成像装置和电子设备 Download PDF

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Publication number
CN106129077B
CN106129077B CN201610626493.9A CN201610626493A CN106129077B CN 106129077 B CN106129077 B CN 106129077B CN 201610626493 A CN201610626493 A CN 201610626493A CN 106129077 B CN106129077 B CN 106129077B
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color filter
imaging device
film
filter components
colour filter
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Chinese (zh)
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CN106129077A (zh
Inventor
荻田知治
山本笃志
田谷圭司
大塚洋一
田渕清隆
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201610626493.9A 2011-03-14 2012-03-07 成像装置和电子设备 Active CN106129077B (zh)

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JP2011055631 2011-03-14
JP2011-055631 2011-03-14
CN201210058232.3A CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

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CN106129077A CN106129077A (zh) 2016-11-16
CN106129077B true CN106129077B (zh) 2019-05-10

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CN201610623971.0A Active CN106098716B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610037666.3A Active CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610626493.9A Active CN106129077B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201710116321.1A Active CN107068705B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201210058232.3A Active CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

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CN201610037666.3A Active CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

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CN201210058232.3A Active CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

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US (1) US8742525B2 (enExample)
JP (1) JP5938946B2 (enExample)
CN (5) CN106098716B (enExample)

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JP2018200909A (ja) * 2017-05-25 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
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CN110729314A (zh) * 2018-07-17 2020-01-24 联华电子股份有限公司 光学感测装置
JP7362198B2 (ja) * 2018-07-18 2023-10-17 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器
KR102649313B1 (ko) 2019-02-13 2024-03-20 삼성전자주식회사 이미지 센서
KR102747501B1 (ko) * 2019-10-02 2024-12-31 에스케이하이닉스 주식회사 이미지 센서
JP2021082716A (ja) * 2019-11-19 2021-05-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
US11631709B2 (en) * 2020-03-10 2023-04-18 Visera Technologies Company Limited Solid-state image sensor
DE112021001902T5 (de) * 2020-03-27 2023-02-23 Sony Semiconductor Solutions Corporation Abbildungsvorrichtung und elektronische vorrichtung
KR102786345B1 (ko) * 2020-04-24 2025-03-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
US12027549B2 (en) 2020-11-27 2024-07-02 Samsung Electronics Co., Ltd. Image sensor
KR20230156322A (ko) 2021-03-16 2023-11-14 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
CN220603808U (zh) * 2022-05-16 2024-03-15 3M创新有限公司 用于显示系统的光学构造体
CN120769579A (zh) * 2025-09-08 2025-10-10 格科微电子（上海）有限公司 一种光学传感器的滤光器及其形成方法

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Also Published As

Publication number Publication date
CN105720066A (zh) 2016-06-29
US8742525B2 (en) 2014-06-03
JP5938946B2 (ja) 2016-06-22
JP2012209542A (ja) 2012-10-25
CN106129077A (zh) 2016-11-16
CN102683366A (zh) 2012-09-19
CN106098716B (zh) 2018-04-17
CN107068705B (zh) 2019-03-08
CN105720066B (zh) 2021-11-16
US20120235263A1 (en) 2012-09-20
CN102683366B (zh) 2017-04-12
CN107068705A (zh) 2017-08-18
CN106098716A (zh) 2016-11-09

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