CN106098915A - 一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 - Google Patents

一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 Download PDF

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CN106098915A
CN106098915A CN201610452147.3A CN201610452147A CN106098915A CN 106098915 A CN106098915 A CN 106098915A CN 201610452147 A CN201610452147 A CN 201610452147A CN 106098915 A CN106098915 A CN 106098915A
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perovskite
modified silica
plant growth
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秦廷廷
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Fuyang City Light Illuminates Bright Science And Technology Ltd
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Fuyang City Light Illuminates Bright Science And Technology Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/644Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0075Processes relating to semiconductor body packages relating to heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

本发明公开了一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶,这种改性硅胶在制备过程中,纳米钙钛矿、纳米氧化锌预先经过硅烷偶联剂处理,提高其在硅胶中的分散性,获得了具有良好聚光、散热、耐老化的改性硅胶,加入的异丙醇铝溶胶进一步提高了材料的导热性能,最终制得了室温即可固化的复合封装膜,以其封装的芯片或者荧光层密封效果好,出光强度高,光线集中,极大地提高了植物的有效照射率,高效节能,且使用简单,直接将其涂覆在芯片或者荧光粉层上固化即可。

Description

一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶
技术领域
本发明涉及LED封装胶技术领域,尤其涉及一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶。
背景技术
植物生长过程中光照是一个至关重要的因素,在种植过程中,因为自然条件的变化,尤其是在晚秋和冬季,植物的光照明显不足,此时室内补充照明就显得尤为重要了。LED光源是近年来崛起的在农业领域较为理想的人工光源,较之传统光源,LED光源节能环保,光谱纯净,贴合植物生长的波长范围,拥有巨大的市场需求量。
LED植物生长灯多是由若干均匀分布的单灯组合而成,其中单灯是由若干个发光芯片封装而成,生产过程一般为固晶、焊线、灌封、切割、测试、包装这几个流程,其中灌封胶的性能将直接影响到芯片的出光效率和使用寿命,目前LED植物灯在应用过程中存在的问题主要是发光效率低,光分散度高,而大功率的芯片封装又存在散热性差、使用寿命短等问题。
发明内容
本发明目的就是为了弥补已有技术的缺陷,提供一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶。
本发明是通过以下技术方案实现的:
一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶,所述的改性硅胶由以下重量份的原料制得:乙烯基MQ硅树脂50-60、纳米钙钛矿1-2、乙烯基硅油30-40、含氢硅油5-10、硅烷偶联剂0.4-0.5、纳米氧化锌5-8、卡斯特铂金催化剂0.1、异丙醇铝0.5-1、丁基缩水甘油醚5-10。
所述的改性硅胶由以下步骤制得:
(1)将纳米钙钛矿、纳米氧化锌与硅烷偶联剂混合研磨分散20-30min备用;
(2)将异丙醇铝投入丁基缩水甘油醚中,密闭超声搅拌混合3-5h,制成透明溶胶,随后投入步骤(1)制备的物料,继续超声分散2-3h,所得物料备用;
(3)将其它剩余物料混合搅拌混合均匀后滴加步骤(2)制备的物料,边滴加边搅拌,滴加完毕后混合物料经过滤、真空脱泡后涂覆于芯片或荧光层上,待其固化后即完成封装。
本发明制备了一种用于LED植物生长灯的纳米钙钛矿改性硅胶,在制备过程中,纳米钙钛矿、纳米氧化锌预先经过硅烷偶联剂处理,提高其在硅胶中的分散性,获得了具有良好聚光、散热、耐老化的改性硅胶,加入的异丙醇铝溶胶进一步提高了材料的导热性能,最终制得了室温即可固化的复合封装膜,以其封装的芯片或者荧光层密封效果好,出光强度高,光线集中,极大地提高了植物的有效照射率,高效节能,且使用简单,直接将其涂覆在芯片或者荧光粉层上固化即可。
具体实施方式
该实例例的改性硅胶由以下重量份的原料制得:乙烯基MQ硅树脂50、纳米钙钛矿1、乙烯基硅油30、含氢硅油5、硅烷偶联剂0.4、纳米氧化锌5、卡斯特铂金催化剂0.1、异丙醇铝0.5、丁基缩水甘油醚5。
该改性硅胶由以下步骤制得:
(1)将纳米钙钛矿、纳米氧化锌与硅烷偶联剂混合研磨分散20min备用;
(2)将异丙醇铝投入丁基缩水甘油醚中,密闭超声搅拌混合3h,制成透明溶胶,随后投入步骤(1)制备的物料,继续超声分散2h,所得物料备用;
(3)将其它剩余物料混合搅拌混合均匀后滴加步骤(2)制备的物料,边滴加边搅拌,滴加完毕后混合物料经过滤、真空脱泡后涂覆于芯片或荧光层上,待其固化后即完成封装。
产品性能测试结果如下:
拉伸强度:58.3MPa;吸水率%(25℃):0.80;折射率:1.562;透光率:84.2%。

Claims (2)

1.一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶,其特征在于,所述的改性硅胶由以下重量份的原料制得:乙烯基MQ硅树脂50-60、纳米钙钛矿1-2、乙烯基硅油30-40、含氢硅油5-10、硅烷偶联剂0.4-0.5、纳米氧化锌5-8、卡斯特铂金催化剂0.1、异丙醇铝0.5-1、丁基缩水甘油醚5-10。
2.如权利要求1所述的一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶,其特征在于,所述的改性硅胶由以下步骤制得:
(1)将纳米钙钛矿、纳米氧化锌与硅烷偶联剂混合研磨分散20-30min备用;
(2)将异丙醇铝投入丁基缩水甘油醚中,密闭超声搅拌混合3-5h,制成透明溶胶,随后投入步骤(1)制备的物料,继续超声分散2-3h,所得物料备用;
(3)将其它剩余物料混合搅拌混合均匀后滴加步骤(2)制备的物料,边滴加边搅拌,滴加完毕后混合物料经过滤、真空脱泡后涂覆于芯片或荧光层上,待其固化后即完成封装。
CN201610452147.3A 2016-06-21 2016-06-21 一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 Withdrawn CN106098915A (zh)

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CN107541101A (zh) * 2017-08-11 2018-01-05 深圳市大材液态金属科技有限公司 一种空调压缩机涂料及其制备方法
CN113372912A (zh) * 2021-05-28 2021-09-10 西安建筑科技大学 一种钙钛矿量子点复合YAG:Ce荧光粉材料及其制备方法、应用
CN114479743A (zh) * 2022-03-07 2022-05-13 上海回天新材料有限公司 一种用于tws耳机粘接的反应型聚氨酯热熔胶及其制备方法

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CN104130741A (zh) * 2014-06-29 2014-11-05 惠州市永卓科技有限公司 一种cob-led灌封用透明有机硅胶及其制备方法
CN104164596A (zh) * 2014-07-22 2014-11-26 安徽冠宇光电科技有限公司 一种led用含改性粉煤灰的铝基复合散热材料

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CN102719213A (zh) * 2012-07-06 2012-10-10 江苏泰特尔化工有限公司 一种改性纳米氧化锌掺杂脂环族环氧树脂led封装胶
CN102850804A (zh) * 2012-08-22 2013-01-02 深圳天鼎精细化工制造有限公司 一种led用透明双组分有机硅灌封胶及其制备方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107541101A (zh) * 2017-08-11 2018-01-05 深圳市大材液态金属科技有限公司 一种空调压缩机涂料及其制备方法
CN113372912A (zh) * 2021-05-28 2021-09-10 西安建筑科技大学 一种钙钛矿量子点复合YAG:Ce荧光粉材料及其制备方法、应用
CN114479743A (zh) * 2022-03-07 2022-05-13 上海回天新材料有限公司 一种用于tws耳机粘接的反应型聚氨酯热熔胶及其制备方法

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