CN106098915A - 一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 - Google Patents
一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 Download PDFInfo
- Publication number
- CN106098915A CN106098915A CN201610452147.3A CN201610452147A CN106098915A CN 106098915 A CN106098915 A CN 106098915A CN 201610452147 A CN201610452147 A CN 201610452147A CN 106098915 A CN106098915 A CN 106098915A
- Authority
- CN
- China
- Prior art keywords
- nano
- gel
- perovskite
- modified silica
- plant growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 230000008635 plant growth Effects 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910000077 silane Inorganic materials 0.000 claims abstract description 8
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000000741 silica gel Substances 0.000 claims abstract description 3
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 3
- 229960001866 silicon dioxide Drugs 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229920002545 silicone oil Polymers 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 229920002554 vinyl polymer Polymers 0.000 claims description 6
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 230000032683 aging Effects 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 241000196324 Embryophyta Species 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- HSRJKNPTNIJEKV-UHFFFAOYSA-N Guaifenesin Chemical compound COC1=CC=CC=C1OCC(O)CO HSRJKNPTNIJEKV-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- -1 isopropanol Aluminum Chemical compound 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Cultivation Of Plants (AREA)
Abstract
本发明公开了一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶，这种改性硅胶在制备过程中，纳米钙钛矿、纳米氧化锌预先经过硅烷偶联剂处理，提高其在硅胶中的分散性，获得了具有良好聚光、散热、耐老化的改性硅胶，加入的异丙醇铝溶胶进一步提高了材料的导热性能，最终制得了室温即可固化的复合封装膜，以其封装的芯片或者荧光层密封效果好，出光强度高，光线集中，极大地提高了植物的有效照射率，高效节能，且使用简单，直接将其涂覆在芯片或者荧光粉层上固化即可。
Description
技术领域
本发明涉及LED封装胶技术领域，尤其涉及一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶。
背景技术
植物生长过程中光照是一个至关重要的因素，在种植过程中，因为自然条件的变化，尤其是在晚秋和冬季，植物的光照明显不足，此时室内补充照明就显得尤为重要了。LED光源是近年来崛起的在农业领域较为理想的人工光源，较之传统光源，LED光源节能环保，光谱纯净，贴合植物生长的波长范围，拥有巨大的市场需求量。
LED植物生长灯多是由若干均匀分布的单灯组合而成，其中单灯是由若干个发光芯片封装而成，生产过程一般为固晶、焊线、灌封、切割、测试、包装这几个流程，其中灌封胶的性能将直接影响到芯片的出光效率和使用寿命，目前LED植物灯在应用过程中存在的问题主要是发光效率低，光分散度高，而大功率的芯片封装又存在散热性差、使用寿命短等问题。
发明内容
本发明目的就是为了弥补已有技术的缺陷，提供一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶。
本发明是通过以下技术方案实现的：
一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶，所述的改性硅胶由以下重量份的原料制得：乙烯基MQ硅树脂50-60、纳米钙钛矿1-2、乙烯基硅油30-40、含氢硅油5-10、硅烷偶联剂0.4-0.5、纳米氧化锌5-8、卡斯特铂金催化剂0.1、异丙醇铝0.5-1、丁基缩水甘油醚5-10。
所述的改性硅胶由以下步骤制得：
（1）将纳米钙钛矿、纳米氧化锌与硅烷偶联剂混合研磨分散20-30min备用；
（2）将异丙醇铝投入丁基缩水甘油醚中，密闭超声搅拌混合3-5h，制成透明溶胶，随后投入步骤（1）制备的物料，继续超声分散2-3h，所得物料备用；
（3）将其它剩余物料混合搅拌混合均匀后滴加步骤（2）制备的物料，边滴加边搅拌，滴加完毕后混合物料经过滤、真空脱泡后涂覆于芯片或荧光层上，待其固化后即完成封装。
本发明制备了一种用于LED植物生长灯的纳米钙钛矿改性硅胶，在制备过程中，纳米钙钛矿、纳米氧化锌预先经过硅烷偶联剂处理，提高其在硅胶中的分散性，获得了具有良好聚光、散热、耐老化的改性硅胶，加入的异丙醇铝溶胶进一步提高了材料的导热性能，最终制得了室温即可固化的复合封装膜，以其封装的芯片或者荧光层密封效果好，出光强度高，光线集中，极大地提高了植物的有效照射率，高效节能，且使用简单，直接将其涂覆在芯片或者荧光粉层上固化即可。
具体实施方式
该实例例的改性硅胶由以下重量份的原料制得：乙烯基MQ硅树脂50、纳米钙钛矿1、乙烯基硅油30、含氢硅油5、硅烷偶联剂0.4、纳米氧化锌5、卡斯特铂金催化剂0.1、异丙醇铝0.5、丁基缩水甘油醚5。
该改性硅胶由以下步骤制得：
（1）将纳米钙钛矿、纳米氧化锌与硅烷偶联剂混合研磨分散20min备用；
（2）将异丙醇铝投入丁基缩水甘油醚中，密闭超声搅拌混合3h，制成透明溶胶，随后投入步骤（1）制备的物料，继续超声分散2h，所得物料备用；
（3）将其它剩余物料混合搅拌混合均匀后滴加步骤（2）制备的物料，边滴加边搅拌，滴加完毕后混合物料经过滤、真空脱泡后涂覆于芯片或荧光层上，待其固化后即完成封装。
产品性能测试结果如下：
拉伸强度：58.3MPa；吸水率%（25℃）：0.80；折射率：1.562；透光率：84.2%。
Claims (2)
1.一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶，其特征在于，所述的改性硅胶由以下重量份的原料制得：乙烯基MQ硅树脂50-60、纳米钙钛矿1-2、乙烯基硅油30-40、含氢硅油5-10、硅烷偶联剂0.4-0.5、纳米氧化锌5-8、卡斯特铂金催化剂0.1、异丙醇铝0.5-1、丁基缩水甘油醚5-10。
2.如权利要求1所述的一种应用于LED植物生长灯芯片封装的纳米钙钛矿改性硅胶，其特征在于，所述的改性硅胶由以下步骤制得：
（1）将纳米钙钛矿、纳米氧化锌与硅烷偶联剂混合研磨分散20-30min备用；
（2）将异丙醇铝投入丁基缩水甘油醚中，密闭超声搅拌混合3-5h，制成透明溶胶，随后投入步骤（1）制备的物料，继续超声分散2-3h，所得物料备用；
（3）将其它剩余物料混合搅拌混合均匀后滴加步骤（2）制备的物料，边滴加边搅拌，滴加完毕后混合物料经过滤、真空脱泡后涂覆于芯片或荧光层上，待其固化后即完成封装。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610452147.3A CN106098915A (zh) | 2016-06-21 | 2016-06-21 | 一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610452147.3A CN106098915A (zh) | 2016-06-21 | 2016-06-21 | 一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106098915A true CN106098915A (zh) | 2016-11-09 |
Family
ID=57238244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610452147.3A Withdrawn CN106098915A (zh) | 2016-06-21 | 2016-06-21 | 一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106098915A (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107541101A (zh) * | 2017-08-11 | 2018-01-05 | 深圳市大材液态金属科技有限公司 | 一种空调压缩机涂料及其制备方法 |
| CN113372912A (zh) * | 2021-05-28 | 2021-09-10 | 西安建筑科技大学 | 一种钙钛矿量子点复合YAG:Ce荧光粉材料及其制备方法、应用 |
| CN114479743A (zh) * | 2022-03-07 | 2022-05-13 | 上海回天新材料有限公司 | 一种用于tws耳机粘接的反应型聚氨酯热熔胶及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102719213A (zh) * | 2012-07-06 | 2012-10-10 | 江苏泰特尔化工有限公司 | 一种改性纳米氧化锌掺杂脂环族环氧树脂led封装胶 |
| CN102850804A (zh) * | 2012-08-22 | 2013-01-02 | 深圳天鼎精细化工制造有限公司 | 一种led用透明双组分有机硅灌封胶及其制备方法 |
| CN103466703A (zh) * | 2013-09-29 | 2013-12-25 | 安徽工业大学 | 钛酸铋纳米针及其制备方法 |
| CN104130741A (zh) * | 2014-06-29 | 2014-11-05 | 惠州市永卓科技有限公司 | 一种cob-led灌封用透明有机硅胶及其制备方法 |
| CN104164596A (zh) * | 2014-07-22 | 2014-11-26 | 安徽冠宇光电科技有限公司 | 一种led用含改性粉煤灰的铝基复合散热材料 |
-
2016
- 2016-06-21 CN CN201610452147.3A patent/CN106098915A/zh not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102719213A (zh) * | 2012-07-06 | 2012-10-10 | 江苏泰特尔化工有限公司 | 一种改性纳米氧化锌掺杂脂环族环氧树脂led封装胶 |
| CN102850804A (zh) * | 2012-08-22 | 2013-01-02 | 深圳天鼎精细化工制造有限公司 | 一种led用透明双组分有机硅灌封胶及其制备方法 |
| CN103466703A (zh) * | 2013-09-29 | 2013-12-25 | 安徽工业大学 | 钛酸铋纳米针及其制备方法 |
| CN104130741A (zh) * | 2014-06-29 | 2014-11-05 | 惠州市永卓科技有限公司 | 一种cob-led灌封用透明有机硅胶及其制备方法 |
| CN104164596A (zh) * | 2014-07-22 | 2014-11-26 | 安徽冠宇光电科技有限公司 | 一种led用含改性粉煤灰的铝基复合散热材料 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107541101A (zh) * | 2017-08-11 | 2018-01-05 | 深圳市大材液态金属科技有限公司 | 一种空调压缩机涂料及其制备方法 |
| CN113372912A (zh) * | 2021-05-28 | 2021-09-10 | 西安建筑科技大学 | 一种钙钛矿量子点复合YAG:Ce荧光粉材料及其制备方法、应用 |
| CN114479743A (zh) * | 2022-03-07 | 2022-05-13 | 上海回天新材料有限公司 | 一种用于tws耳机粘接的反应型聚氨酯热熔胶及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104789186B (zh) | 一种单组份不出油型led灯丝触变胶及其制备方法 | |
| CN101740707B (zh) | 预成型荧光粉贴片及其与发光二极管的封装方法 | |
| CN105542693A (zh) | Led灯丝的封装材料 | |
| CN106098915A (zh) | 一种应用于led植物生长灯芯片封装的纳米钙钛矿改性硅胶 | |
| CN107353889B (zh) | 一种提高水相量子点稳定性的方法 | |
| CN107265873A (zh) | 一种白光led封装用低熔点荧光玻璃片及其制备方法 | |
| CN105070816B (zh) | 一种led用荧光粉薄膜粉浆 | |
| CN108091752A (zh) | 一种白光led及其制备方法 | |
| CN105802520A (zh) | 一种有机转光纳米粒子、光伏电池封装胶膜及制备方法 | |
| CN101442087B (zh) | 一种小功率型低光衰白光led | |
| CN109337673A (zh) | 一种二氧化钒基荧光复合材料及其应用 | |
| CN106590070B (zh) | 阻隔红外、隔热的透明无机涂料及其制备方法和应用 | |
| CN105936739A (zh) | 一种应用于led植物生长灯芯片封装的导热聚光室温固化改性环氧树脂胶 | |
| CN100490201C (zh) | 白光发光二极管 | |
| CN114824032A (zh) | 一种全光谱led健康光源及器件 | |
| CN104051600B (zh) | 一种半导体制造黄光室用的led黄色光源及其制作工艺 | |
| CN113861970A (zh) | 纤维素基碳点的制备方法及抗蓝光领域应用 | |
| CN206194786U (zh) | 一种基于CdxZn1‑xS@ZnSe量子点的白光LED装置 | |
| CN105244427A (zh) | 一种新型白光led荧光膜以及基于荧光膜的led | |
| CN105131880A (zh) | Led固晶胶及其制备方法和应用 | |
| CN106085335A (zh) | 一种应用于led植物生长灯芯片封装的有机硅改性聚氨酯导热聚光膜 | |
| CN106084661A (zh) | 一种应用于led植物生长灯芯片封装的增透防污改性环氧树脂胶 | |
| WO2018121104A1 (zh) | 一种csp芯片级封装件及封装方法 | |
| CN105552193A (zh) | Led灯丝的制备方法 | |
| CN106085322A (zh) | 一种应用于led植物生长灯芯片封装的耐热高透光改性环氧树脂胶 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20161109 |
|
| WW01 | Invention patent application withdrawn after publication |