CN106084597A - 背面保护薄膜、一体型薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法 - Google Patents

背面保护薄膜、一体型薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法 Download PDF

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Publication number
CN106084597A
CN106084597A CN201610273102.XA CN201610273102A CN106084597A CN 106084597 A CN106084597 A CN 106084597A CN 201610273102 A CN201610273102 A CN 201610273102A CN 106084597 A CN106084597 A CN 106084597A
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China
Prior art keywords
thin film
protective thin
methyl
wavelength
protective
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CN201610273102.XA
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Inventor
高本尚英
木村龙
木村龙一
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Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN106084597A publication Critical patent/CN106084597A/zh
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Abstract

本发明提供背面保护薄膜、一体型薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法。提供能够用红外线照相机隔着背面保护薄膜捕捉半导体元件的裂纹的背面保护薄膜等。涉及一种背面保护薄膜，其用于保护半导体元件的背面，波长800nm的平行光线透过率为15％以上。背面保护薄膜的波长800nm的平行光线透过率相对于波长532nm的平行光线透过率之比优选为2以上。

Description

背面保护薄膜、一体型薄膜、薄膜、半导体装置的制造方法和保护芯片的制 造方法
技术领域
本发明涉及用于保护半导体元件背面的背面保护薄膜、一体型薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法。
背景技术
近年来，广泛利用在基板上通过倒装芯片接合而安装有半导体芯片等半导体元件的倒装芯片型半导体装置。倒装芯片型的半导体装置中，为了防止半导体元件的损伤等，有时在半导体元件的背面设置背面保护薄膜。通常，为了能够目视识别用激光印刷的标识(以下称为“激光标识”)，背面保护薄膜进行了着色。
关于半导体装置的制造方法，有时存在将背面保护薄膜与半导体晶片进行粘贴并通过切割而形成保护芯片的工序，所述保护芯片具有半导体元件和配置在半导体元件的背面上的背面保护薄膜(例如参照专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2010-199541号公报
发明内容
发明要解决的问题
有时因切割而使半导体元件产生裂纹。然而，难以隔着背面保护薄膜观察到裂纹。
本发明是鉴于上述课题而进行的，其目的在于，提供能够用红外线照相机隔着背面保护薄膜捕捉半导体元件的裂纹的背面保护薄膜、一体型薄膜和薄膜。本发明的目的在于，提供能够用红外线照相机隔着背面保护薄膜捕捉半导体元件的裂纹的半导体装置的制造方法和保护芯片。
用于解决问题的方案
本发明涉及用于保护半导体元件背面的背面保护薄膜。背面保护薄膜的波长800nm的平行光线透过率为15％以上。通过为15％以上，能够用红外线照相机隔着背面保护薄膜捕捉半导体元件的裂纹。半导体元件优选为倒装芯片。
波长800nm的平行光线透过率相对于波长532nm的平行光线透过率之比(波长800nm的平行光线透过率/波长532nm的平行光线透过率)优选为2以上。通过为2以上，能够用激光对背面保护薄膜进行印刷。
本发明还涉及一体型薄膜，其包括：包含基材和配置在基材上的粘合剂层的切割带、以及配置在粘合剂层上的背面保护薄膜。切割带的波长800nm的平行光线透过率为20％以上。通过为20％以上，能够用红外线照相机隔着一体型薄膜捕捉半导体元件的裂纹。一体型薄膜的波长800nm的平行光线透过率优选为15％以上。通过为15％以上，能够用红外线照相机隔着一体型薄膜捕捉半导体元件的裂纹。
本发明还涉及薄膜，其包括：隔离膜、以及配置在隔离膜上的背面保护薄膜。
本发明还涉及半导体装置的制造方法，其包括如下工序：将背面保护薄膜与半导体晶片进行粘贴的工序；以及，通过切割而形成保护芯片的工序，所述保护芯片包含半导体元件和配置在半导体元件的背面上的背面保护薄膜。
本发明还涉及保护芯片的制造方法，其包括如下工序：将背面保护薄膜与半导体晶片进行粘贴的工序；以及，通过切割而形成保护芯片的工序，所述保护芯片包含半导体元件和配置在半导体元件的背面上的背面保护薄膜。
附图说明
图1是薄膜的概略俯视图。
图2是薄膜的一部分的概略截面图。
图3是半导体装置的制造工序的概略截面图。
图4是半导体装置的制造工序的概略截面图。
图5是半导体装置的制造工序的概略截面图。
图6是半导体装置的制造工序的概略截面图。
图7是变形例1中的薄膜的一部分的概略截面图。
图8是实施方式2中的薄膜的概略截面图。
图9是实施例中使用的切割带的概略截面图。
附图标记说明
1 薄膜
11 背面保护薄膜
12 切割带
13 隔离膜
71 一体型薄膜
121 基材
122 粘合剂层
122A 接触部
122B 周边部
4 半导体晶片
5 保护芯片
6 被粘物
8 吸附基座
41 半导体元件
51 凸块
61 导电材料
88 红外线照相机
921 基材
922 粘合剂层
具体实施方式
以下列举出实施方式来详细说明本发明，但本发明不仅限定于这些实施方式。
[实施方式1]
(薄膜1)
如图1和图2所示那样，薄膜1包括隔离膜13和配置在隔离膜13上的背面保护薄膜11。更具体而言，薄膜1包括隔离膜13和配置在隔离膜13上的一体型薄膜71a、71b、71c、……、71m(以下统称为“一体型薄膜71”。)。一体型薄膜71a与一体型薄膜71b之间的距离、一体型薄膜71b与一体型薄膜71c之间的距离、……一体型薄膜71l与一体型薄膜71m之间的距离是一定的。薄膜1能够呈现卷状。
一体型薄膜71包括切割带12和配置在切割带12上的背面保护薄膜11。切割带12包括基材121和配置在基材121上的粘合剂层122。对于背面保护薄膜11而言，可以用其与粘合剂层122接触的第1面和位于第1面对侧的第2面来定义两个表面。第2面与隔离膜13接触。
(背面保护薄膜11)
背面保护薄膜11的波长800nm的平行光线透过率为15％以上、优选为20％以上、更优选为30％以上。通过为15％以上，能够用红外线照相机隔着背面保护薄膜11捕捉半导体元件的裂纹。通过为30％以上，能够高精度地捕捉裂纹。
背面保护薄膜11的波长800nm的平行光线透过率的上限例如为90％、70％、60％、50％。
波长800nm的平行光线透过率可通过着色剂的种类等来控制。例如，通过使用染料来作为着色剂，能够提高波长800nm的平行光线透过率。更具体而言，通过使用不具有蒽醌骨架的染料，能够提高波长800nm的平行光线透过率。
背面保护薄膜11的波长532nm的平行光线透过率优选为20％以下、更优选为15％以下、进一步优选为5％以下。通过为20％以下，能够用激光对背面保护薄膜11进行印刷。另一方面，波长532nm的平行光线透过率的下限例如为1％。
波长532nm的平行光线透过率例如可通过使用具有偶氮系骨架的着色剂、具有双偶氮系骨架的着色剂来控制。
背面保护薄膜11的波长800nm的平行光线透过率相对于波长532nm的平行光线透过率之比(波长800nm的平行光线透过率/波长532nm的平行光线透过率)优选为2以上、更优选为5以上。通过为2以上，能够用激光对背面保护薄膜11进行印刷。另一方面，所述比值的上限例如为1000。
背面保护薄膜11的波长400nm～650nm总范围的平行光线透过率优选为20％以下、更优选为15％以下、进一步优选为5％以下。通过为20％以下，能够用激光对背面保护薄膜11进行印刷。另一方面，波长400nm～650nm总范围的平行光线透过率的下限例如为0.1％。
背面保护薄膜11优选为有色。通过使背面保护薄膜11为有色，可容易地对激光标识进行目视识别。背面保护薄膜11例如优选为黑色、蓝色、红色等深色。特别优选为黑色。
深色是指基本上L*a*b*色度体系所规定的L*达到60以下(0～60)[优选为50以下(0～50)、进一步优选为40以下(0～40)]的深色。
另外，黑色是指基本上L*a*b*色度体系所规定的L*达到35以下(0～35)[优选为30以下(0～30)、进一步优选为25以下(0～25)]的黑色系颜色。需要说明的是，对于黑色而言，L*a*b*色度体系所规定的a*、b*可分别根据L*值来适当选择。作为a*、b*，例如两者均优选为-10～10、更优选为-5～5、特别适合为-3～3的范围(尤其是为0或大致为0)。
需要说明的是，L*a*b*色度体系所规定的L*、a*、b*可通过使用色彩色差计(商品名“CR-200”、KONICA MINOLTA,INC.制造；色彩色差计)进行测定来求出。需要说明的是，L*a*b*色度体系是国际照明委员会(CIE)于1976年推荐的颜色空间，是指被称为CIE1976(L*a*b*)色度体系的颜色空间。另外，L*a*b*色度体系在日本工业标准中由JIS Z 8729进行规定。
背面保护薄膜11通常为未固化状态。未固化状态包括半固化状态。背面保护薄膜11优选为半固化状态。
在85℃和85％RH的气氛下放置了168小时时的背面保护薄膜11的吸湿率优选为1重量％以下、更优选为0.8重量％以下。通过为1重量％以下，能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。
背面保护薄膜11的吸湿率的测定方法如下所示。即，将背面保护薄膜11在85℃、85％RH的恒温恒湿槽中放置168小时，由放置前后的减重率(weight-loss ratio)求出吸湿率。
将通过使背面保护薄膜11固化而得到的固化物在85℃和85％RH的气氛下放置了168小时时的吸湿率优选为1重量％以下、更优选为0.8重量％以下。通过为1重量％以下，能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。
固化物的吸湿率的测定方法如下所示。即，将固化物在85℃、85％RH的恒温恒湿槽中放置168小时，由放置前后的减重率求出吸湿率。
背面保护薄膜11中的乙醇提取的凝胶率优选为50％以上、更优选为70％以上、更进一步优选为90％以上。为50％以上时，能够防止其粘附于半导体制造工艺中的夹具等。
需要说明的是，背面保护薄膜11的凝胶率可通过树脂成分的种类、其含量、交联剂的种类、其含量、以及加热温度、加热时间等来控制。
背面保护薄膜11的未固化状态下的23℃下的拉伸储能模量优选为0.5GPa以上、更优选为0.75GPa以上、进一步优选为1GPa以上。为1GPa以上时，能够防止背面保护薄膜11附着于载带。23℃下的拉伸储能模量的上限例如为50GPa。23℃下的拉伸储能模量可通过树脂成分的种类、其含量、填充材料的种类、其含量等来控制。
背面保护薄膜11可以是导电性，也可以是非导电性。
背面保护薄膜11对于半导体晶片的粘接力(23℃、剥离角度为180°、剥离速度为300mm/分钟)优选为1N/10mm宽度以上、更优选为2N/10mm宽度以上、进一步优选为4N/10mm宽度以上。另一方面，所述粘接力优选为10N/10mm宽度以下。通过为1N/10mm宽度以上，背面保护薄膜11以优异的密合性粘贴于半导体晶片、半导体元件，能够防止浮起等的发生。另外，在切割半导体晶片时还能够防止芯片飞散的发生。需要说明的是，背面保护薄膜11对于半导体晶片的粘接力例如是如下操作而测定的值。即，在背面保护薄膜11的一个面上粘贴粘合带(商品名“BT315”、日东电工株式会社制造)而对背面进行增强。其后，用50℃且2kg的辊往复一次而利用热层压法将厚度0.6mm的半导体晶片粘贴在进行了背面增强的长度150mm、宽度10mm的背面保护薄膜11的表面(正面)。其后，在热板上(50℃)静置2分钟后，在常温(23℃左右)下静置20分钟。静置后，使用剥离试验机(商品名“AUTOGRAPH AGS-J”、岛津制作所社制造)，在23℃的温度下，在剥离角度：180°、拉伸速度：300mm/分钟的条件下，剥掉进行了背面增强的背面保护薄膜11。背面保护薄膜11相对于半导体晶片的粘接力是此时在背面保护薄膜11与半导体晶片的界面进行剥离而测定的值(N/10mm宽度)。
背面保护薄膜11的厚度优选为2μm以上、更优选为4μm以上、进一步优选为6μm以上、特别优选为10μm以上。另一方面，背面保护薄膜11的厚度优选为200μm以下、更优选为160μm以下、进一步优选为100μm以下、特别优选为80μm以下。
背面保护薄膜11优选包含着色剂。作为着色剂，例如可列举出染料、颜料。其中优选为染料。
作为染料，优选为深色系染料。作为深色系染料，例如可列举出黑色染料、蓝色染料、红色染料等。其中，优选为黑色染料。色料可以单独使用或者组合使用2种以上。
背面保护薄膜11中的着色剂的含量优选为0.5重量％以上、更优选为1重量％以上、进一步优选为2重量％以上。背面保护薄膜11中的着色剂的含量优选为10重量％以下、更优选为8重量％以下、进一步优选为5重量％以下。
背面保护薄膜11可以包含热塑性树脂。
作为热塑性树脂，例如可列举出天然橡胶、丁基橡胶、异戊橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙和/或6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET(聚对苯二甲酸乙二醇酯)和/或PBT(聚对苯二甲酸丁二醇酯)等饱和聚酯树脂、聚酰胺酰亚胺树脂或氟树脂等。热塑性树脂可以单独使用或者组合使用2种以上。其中，适合为丙烯酸类树脂、苯氧基树脂。
作为丙烯酸类树脂，没有特别限定，可列举出以具有碳数为30以下(碳数优选为4～18、碳数进一步优选为6～10、碳数特别优选为8或9)的直链或支链烷基的丙烯酸或甲基丙烯酸的酯中的1种或2种以上作为成分的聚合物等。即，本发明中，丙烯酸类树脂是指还包括甲基丙烯酸类树脂的广义概念。作为烷基，例如可列举出甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基、十八烷基等。
另外，作为用于形成丙烯酸类树脂的其它单体(烷基的碳数为30以下的丙烯酸或甲基丙烯酸的烷基酯以外的单体)，没有特别限定，例如可列举出丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸或巴豆酸等各种含羧基单体；马来酸酐或衣康酸酐等各种酸酐单体；(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂酯或(4-羟基甲基环己基)-甲基丙烯酸酯等各种含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯酰氧基萘磺酸等各种含磺酸基单体；或者2-羟基乙基丙烯酰基磷酸酯等各种含磷酸基单体等。需要说明的是，(甲基)丙烯酸是指丙烯酸和/或甲基丙烯酸，本发明的(甲基)均为相同的意义。
背面保护薄膜11中的热塑性树脂的含量优选为10重量％以上、更优选为30重量％以上。背面保护薄膜11中的热塑性树脂的含量优选为90重量％以下、更优选为70重量％以下。
背面保护薄膜11可以包含热固性树脂。
作为热固性树脂，可列举出环氧树脂、酚醛树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、有机硅树脂、热固性聚酰亚胺树脂等。热固性树脂可以单独使用或者组合使用2种以上。作为热固性树脂，特别适合为会腐蚀半导体元件的离子性杂质等的含量少的环氧树脂。另外，作为环氧树脂的固化剂，可适合地使用酚醛树脂。
作为环氧树脂，没有特别限定，例如可以使用双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟基苯基甲烷型环氧树脂、四羟基苯基乙烷型环氧树脂等二官能环氧树脂、多官能环氧树脂或乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油胺型环氧树脂等环氧树脂。
其中，特别优选为酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯基甲烷型环氧树脂、四羟基苯基乙烷型环氧树脂。这是因为，这些环氧树脂与作为固化剂的酚醛树脂富有反应性、耐热性等优异。
进而，酚醛树脂作为环氧树脂的固化剂而起作用，例如可列举出苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶型酚醛树脂、聚对羟基苯乙烯等聚氧苯乙烯等。酚醛树脂可以单独使用或者组合使用2种以上。这些酚醛树脂之中，特别优选为苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为能够提高半导体装置的连接可靠性。
关于环氧树脂与酚醛树脂的配混比例，例如适合的是，以酚醛树脂中的羟基相对于环氧树脂中的环氧基1当量达到0.5当量～2.0当量的方式进行配混。更适合为0.8当量～1.2当量。
背面保护薄膜11中的热固性树脂的含量优选为2重量％以上、更优选为5重量％以上。背面保护薄膜11中的热固性树脂的含量优选为40重量％以下、更优选为20重量％以下。
背面保护薄膜11可以包含环氧树脂和酚醛树脂的热固化促进催化剂。作为热固化促进催化剂，没有特别限定，可以从公知的热固化促进催化剂中适当选择并使用。热固化促进催化剂可以单独使用或者组合使用2种以上。作为热固化促进催化剂，例如可以使用胺系固化促进剂、磷系固化促进剂、咪唑系固化促进剂、硼系固化促进剂、磷-硼系固化促进剂等。
为了使背面保护薄膜11预先进行某种程度的交联，优选的是，在制作时，作为交联剂而预先添加与聚合物的分子链末端的官能团等发生反应的多官能性化合物。由此能够提高高温下的粘接特性并实现耐热性的改善。
作为交联剂，没有特别限定，可以使用公知的交联剂。具体而言，例如可列举出异氰酸酯系交联剂、环氧系交联剂、三聚氰胺系交联剂、过氧化物系交联剂、脲系交联剂、金属醇盐系交联剂、金属螯合物系交联剂、金属盐系交联剂、碳二亚胺系交联剂、噁唑啉系交联剂、氮丙啶系交联剂、胺系交联剂等。作为交联剂，适合为异氰酸酯系交联剂、环氧系交联剂。另外，交联剂可以单独使用或者组合使用2种以上。
作为异氰酸酯系交联剂，例如可列举出1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯、1,6-六亚甲基二异氰酸酯等低级脂肪族多异氰酸酯类；环亚戊基二异氰酸酯、环亚己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯、氢化二甲苯二异氰酸酯等脂环族多异氰酸酯类；2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯、苯二亚甲基二异氰酸酯等芳香族多异氰酸酯类等，除此之外，还可以使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加成物[Nippon Polyurethane Industry Co.,Ltd.制造、商品名“CORONATE L”]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加成物[Nippon Polyurethane Industry Co.,Ltd.制造、商品名“CORONATE HL”]等。另外，作为环氧系交联剂，例如可列举出N,N,N’,N’-四缩水甘油基间苯二胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨基甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基三(2-羟基乙基)异氰脲酸酯、间苯二酚二缩水甘油醚、双酚-S-二缩水甘油醚、以及分子内具有2个以上环氧基的环氧系树脂等。
需要说明的是，本发明中，还可以照射电子射线、紫外线等来代替使用交联剂，或者与在使用交联剂的同时照射电子射线、紫外线等，由此实施交联处理。
背面保护薄膜11可以包含填充剂。通过包含填充剂，能够实现背面保护薄膜11的弹性模量的调节等。
作为填充剂，可以是无机填充剂、有机填充剂中的任一种，适合为无机填充剂。作为无机填充剂，例如可列举出二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类；铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等金属；或者合金类、其它包含碳等的各种无机粉末等。填充剂可以单独使用或者组合使用2种以上。作为填充剂，其中适合为二氧化硅、特别适合为熔融二氧化硅。需要说明的是，无机填充剂的平均粒径优选在0.1μm～80μm的范围内。无机填充剂的平均粒径例如可通过激光衍射型粒度分布测定装置来测定。
背面保护薄膜11中的填充剂的含量优选为10重量％以上、更优选为20重量％以上。背面保护薄膜11中的填充剂的含量优选为70重量％以下、更优选为50重量％以下。
背面保护薄膜11可以适当包含其它添加剂。作为其它添加剂，例如可列举出阻燃剂、硅烷偶联剂、离子捕获剂、增量剂、防老剂、抗氧化剂、表面活性剂等。
作为阻燃剂，例如可列举出三氧化锑、五氧化锑、溴化环氧树脂等。阻燃剂可以单独使用或者组合使用2种以上。作为硅烷偶联剂，例如可列举出β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。硅烷偶联剂可以单独使用或者组合使用2种以上。作为离子捕获剂，例如可列举出水滑石类、氢氧化铋等。离子捕获剂可以单独使用或者组合使用2种以上。
通过将热固性树脂、热塑性树脂和溶剂等混合而制备混合液，将混合液涂布在剥离纸上并干燥的方法等，能够获得背面保护薄膜11。
(隔离膜13)
作为隔离膜13，可列举出聚对苯二甲酸乙二醇酯(PET)薄膜等。隔离膜13优选实施了脱模处理。隔离膜13的厚度可适当设定。
(一体型薄膜71)
一体型薄膜71包括切割带12和配置在切割带12上的背面保护薄膜11。切割带12包括基材121和配置在基材121上的粘合剂层122。对于基材121而言，可以用其与粘合剂层122接触的第1主面和位于第1主面对侧的第2主面来定义两个表面。粘合剂层122包括与背面保护薄膜11接触的接触部122A。粘合剂层122还包括配置在接触部122A周边的周边部122B。接触部122A因辐射线而进行了固化。另一方面，周边部122B具有利用辐射线而进行固化的性质。作为辐射线，优选为紫外线。
一体型薄膜71的厚度优选为8μm以上、更优选为20μm以上、进一步优选为31μm以上、特别优选为47μm以上。另一方面，一体型薄膜71的厚度优选为1500μm以下、更优选为850μm以下、进一步优选为500μm以下、特别优选为330μm以下。
一体型薄膜71的波长800nm的平行光线透过率优选为15％以上、更优选为20％以上、进一步优选为30％以上。通过为15％以上，能够用红外线照相机隔着一体型薄膜71捕捉半导体元件的裂纹。一体型薄膜71的波长800nm的平行光线透过率的上限例如为98％、95％。
切割带12的波长800nm的平行光线透过率优选为20％以上、更优选为30％以上、进一步优选为40％以上。通过为20％以上，能够用红外线照相机隔着一体型薄膜71捕捉半导体元件的裂纹。切割带12的波长800nm的平行光线透过率的上限例如为98％、95％。
切割带12的波长800nm的平行光线透过率可通过基材121的第2主面的形状来控制。例如，具有平坦的第2主面、即未进行压花加工的第2主面的基材121的波长800nm的平行光线透过率高。
基材121优选具有辐射线透过性。基材121更优选具有紫外线透过性。作为基材121，例如可以使用纸等纸系基材；布、无纺布、毡、网等纤维系基材；金属箔、金属板等金属系基材；塑料的薄膜、片等塑料系基材；橡胶片等橡胶系基材；发泡片等发泡体、它们的层叠体[尤其是塑料系基材与其它基材的层叠体、塑料薄膜(或片)彼此的层叠体等]等适当的薄片体。作为基材121，可适合地使用塑料的薄膜、片等塑料系基材。作为这种塑料材料的原材料，例如可列举出聚乙烯(PE)、聚丙烯(PP)、乙烯-丙烯共聚物等烯烃系树脂；乙烯-醋酸乙烯酯共聚物(EVA)、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物等以乙烯作为单体成分的共聚物；聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚对苯二甲酸丁二醇酯(PBT)等聚酯；丙烯酸类树脂；聚氯乙烯(PVC)；聚氨酯；聚碳酸酯；聚苯硫醚(PPS)；聚酰胺(尼龙)、全芳香族聚酰胺(芳纶)等酰胺系树脂；聚醚醚酮(PEEK)；聚酰亚胺；聚醚酰亚胺；聚偏二氯乙烯；ABS(丙烯腈-丁二烯-苯乙烯共聚物)；纤维素系树脂；有机硅树脂；氟树脂等。
基材121可以在未拉伸的条件下使用，根据需要也可以使用实施了单轴或双轴拉伸处理的基材。通过利用拉伸处理等而对基材121赋予热收缩性，从而能够通过使基材121发生热收缩而降低粘合剂层122与背面保护薄膜11的粘接面积，容易回收半导体元件。
对于基材121的表面而言，为了提高其与相邻层的密合性、保持性等，可以实施惯用的表面处理、例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离辐射线处理等化学处理或物理处理、基于底涂剂的涂覆处理。
基材121可适当地选择并使用同种或不同种的原材料，根据需要可以使用将多种原材料共混而得到的基材。另外，为了对基材121赋予抗静电能力，可以在基材121上设置由金属、合金、它们的氧化物等形成的厚度为左右的导电性物质的蒸镀层。基材121可以为单层或2种以上的多层。
基材121的厚度(层叠体的情况下是总厚度)没有特别限定，可根据强度、柔软性、使用目的等来适当选择，例如通常为1000μm以下(例如为1μm～1000μm)、优选为10μm～500μm、进一步优选为20μm～300μm、尤其是30μm～200μm左右，但不限定于它们。
需要说明的是，基材121可以包含各种添加剂(着色剂、填充材料、增塑剂、防老剂、抗氧化剂、表面活性剂、阻燃剂等)。
粘合剂层122由粘合剂形成，具有粘合性。作为这种粘合剂，没有特别限定，可以从公知的粘合剂中适当选择。具体而言，作为粘合剂，例如可以从丙烯酸类粘合剂、橡胶系粘合剂、乙烯基烷基醚系粘合剂、有机硅系粘合剂、聚酯系粘合剂、聚酰胺系粘合剂、氨基甲酸酯系粘合剂、氟系粘合剂、苯乙烯-二烯嵌段共聚物系粘合剂、向这些粘合剂中配混熔点约为200℃以下的热熔性树脂而得到的蠕变特性改良型粘合剂等公知的粘合剂(例如参照日本特开昭56-61468号公报、日本特开昭61-174857号公报、日本特开昭63-17981号公报、日本特开昭56-13040号公报等)中适当选择并使用具有所述特性的粘合剂。另外，作为粘合剂，也可以使用辐射线固化型粘合剂(或能量射线固化型粘合剂)、热膨胀性粘合剂。粘合剂可以单独使用或者组合使用2种以上。
作为粘合剂，可适合地使用丙烯酸类粘合剂、橡胶系粘合剂，特别适合为丙烯酸类粘合剂。作为丙烯酸类粘合剂，可列举出以丙烯酸类聚合物(均聚物或共聚物)作为基础聚合物的丙烯酸类粘合剂，所述丙烯酸类聚合物将1种或2种以上的(甲基)丙烯酸烷基酯用作单体成分。
作为丙烯酸类粘合剂中的(甲基)丙烯酸烷基酯，例如可列举出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸烷基酯等。作为(甲基)丙烯酸烷基酯，烷基的碳数为4～18的(甲基)丙烯酸烷基酯是适合的。需要说明的是，(甲基)丙烯酸烷基酯的烷基可以是直链状或支链状中的任一种。
需要说明的是，为了内聚力、耐热性、交联性等的改性，丙烯酸类聚合物根据需要可以包含对应于能够与(甲基)丙烯酸烷基酯共聚的其它单体成分(共聚性单体成分)的单元。作为这种共聚性单体成分，例如可列举出(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体；马来酸酐、衣康酸酐等含酸酐基单体；(甲基)丙烯酸羟基乙酯、(甲基)丙烯酸羟基丙酯、(甲基)丙烯酸羟基丁酯、(甲基)丙烯酸羟基己酯、(甲基)丙烯酸羟基辛酯、(甲基)丙烯酸羟基癸酯、(甲基)丙烯酸羟基月桂酯、甲基丙烯酸(4-羟基甲基环己基)甲酯等含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体；2-羟基乙基丙烯酰基磷酸酯等含磷酸基单体；(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-羟甲基丙烷(甲基)丙烯酰胺等(N-取代)酰胺系单体；(甲基)丙烯酸氨基乙酯、(甲基)丙烯酸N,N-二甲氨基乙酯、(甲基)丙烯酸叔丁氨基乙酯等(甲基)丙烯酸氨基烷基酯系单体；(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系单体；丙烯腈、甲基丙烯腈等氰基丙烯酸酯单体；(甲基)丙烯酸缩水甘油酯等含环氧基的丙烯酸类单体；苯乙烯、α-甲基苯乙烯等苯乙烯系单体；醋酸乙烯酯、丙酸乙烯酯等乙烯基酯系单体；异戊二烯、丁二烯、异丁二烯等烯烃系单体；乙烯基醚等乙烯基醚系单体；N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基吗啉、N-乙烯基羧酸酰胺类、N-乙烯基己内酰胺等含氮单体；N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺、N-苯基马来酰亚胺等马来酰亚胺系单体；N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚胺、N-环己基衣康酰亚胺、N-月桂基衣康酰亚胺等衣康酰亚胺系单体；N-(甲基)丙烯酰氧基亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧基六亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-8-氧基八亚甲基琥珀酰亚胺等琥珀酰亚胺系单体；(甲基)丙烯酸聚乙二醇酯、(甲基)丙烯酸聚丙二醇酯、(甲基)丙烯酸甲氧基乙二醇酯、(甲基)丙烯酸甲氧基聚丙二醇酯等二醇系丙烯酸酯单体；(甲基)丙烯酸四氢糠酯、氟代(甲基)丙烯酸酯、有机硅(甲基)丙烯酸酯等具有杂环、卤素原子、硅原子等的丙烯酸酯系单体；己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧丙烯酸酯、聚酯丙烯酸酯、氨基甲酸酯丙烯酸酯、二乙烯基苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯等多官能单体等。这些共聚性单体成分可以使用1种或2种以上。
作为粘合剂而使用辐射线固化型粘合剂(或能量射线固化型粘合剂)时，作为辐射线固化型粘合剂(组合物)，例如可列举出：将聚合物侧链或主链中或主链末端具有自由基反应性碳-碳双键的聚合物用作基础聚合物的潜在型辐射线固化型粘合剂；在粘合剂中配混有紫外线固化性单体成分、低聚物成分的辐射线固化型粘合剂等。另外，作为粘合剂而使用热膨胀性粘合剂时，作为热膨胀性粘合剂，例如可列举出包含粘合剂和发泡剂(尤其是热膨胀性微球)的热膨胀性粘合剂等。
粘合剂层122可以包含各种添加剂(例如赋粘树脂、着色剂、增稠剂、增量剂、填充材料、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
粘合剂层122可以利用例如将粘合剂(压敏粘接剂)与根据需要的溶剂、其它添加剂等混合并形成片状层的惯用方法来形成。具体而言，可以通过如下方法等而形成粘合剂层122：例如，将包含粘合剂和根据需要的溶剂、其它添加剂的混合物涂布在基材121上的方法；在适当的隔离膜(剥离纸等)上涂布混合物而形成粘合剂层122，将其转印(转移)至基材121上的方法。
粘合剂层122的厚度没有特别限定，例如为5μm～300μm、优选为5μm～200μm、进一步优选为5μm～100μm、特别优选为7μm～50μm左右。粘合剂层122的厚度在所述范围内时，能够发挥适当的粘合力。需要说明的是，粘合剂层122可以是单层、多层中的任一种。
(半导体装置的制造方法)
如图3所示那样，将背面保护薄膜11与半导体晶片4进行粘贴。具体而言，剥掉隔离膜13，将一体型薄膜71与半导体晶片4进行粘贴。由此，在半导体晶片4的背面上设置背面保护薄膜11。对于半导体晶片4而言，可以用电路面和位于电路面对侧的背面(也称为非电路面、非电极形成面等)来定义两个表面。粘贴方法没有特别限定，优选为压接。压接通常利用压接辊等按押手段一边按押一边进行。作为半导体晶片4，可适合地使用硅晶片。
如图4所示那样，进行半导体晶片4的切割。由此形成保护芯片5。保护芯片5包括半导体元件41和配置在半导体元件41的背面上的背面保护薄膜11。对于半导体元件41而言，可以用电路面(也称为表面、电路图案形成面、电极形成面等)和位于电路面对侧的背面来定义两个表面。在使切割带12真空吸附于吸附基座8的状态下，例如按照常规方法从半导体晶片4的电路面侧进行切割。另外，该工序中，可以采用例如切入至一体型薄膜71为止的被称为全切的切断方式等。作为本工序中使用的切割装置，没有特别限定，可以使用现有公知的装置。
如图5所示那样，用红外线照相机88隔着背面保护薄膜11和切割带12拍摄半导体元件41。通过用红外线照相机88拍摄半导体元件41，能够调查裂纹的有无。
接着，将保护芯片5从粘合剂层122剥离。即，拾取保护芯片5。作为拾取方法，没有特别限定，可以采用现有公知的各种方法。例如可列举出：用针形件将保护芯片5顶起，利用拾取装置拾取被顶起的保护芯片5的方法等。
如图6所示那样，通过倒装芯片接合方式(倒装芯片安装方式)，将保护芯片5固定于被粘物6。具体而言，在半导体元件41的电路面与被粘物6相对的形态下，将保护芯片5固定于被粘物6。例如，通过使设置在半导体元件41的电路面上的凸块51与覆盖于被粘物6的连接垫的接合用导电材料(焊料等)61相接触，并且一边按押一边使导电材料61熔融，从而能够确保半导体元件41与被粘物6的电导通、将保护芯片5固定于被粘物6(倒装芯片接合工序)。此时，保护芯片5与被粘物6之间形成有空隙，其空隙间距离通常为30μm～300μm左右。需要说明的是，可以将保护芯片5倒装芯片接合(倒装芯片连接)在被粘物6上，然后对保护芯片5与被粘物6的对侧面、间隙进行清洗，向间隙中填充密封材料(密封树脂等)，从而进行密封。
作为被粘物6，可以使用引线框、电路基板(布线电路基板等)等基板。作为这种基板的材质，没有特别限定，可列举出陶瓷基板、塑料基板。作为塑料基板，例如可列举出环氧基板、双马来酰亚胺三嗪基板、聚酰亚胺基板等。
作为凸块、导电材料的材质，没有特别限定，例如可列举出锡-铅系金属材料、锡-银系金属材料、锡-银-铜系金属材料、锡-锌系金属材料、锡-锌-铋系金属材料等焊料类(合金)；金系金属材料、铜系金属材料等。
需要说明的是，导电材料61熔融时的温度通常为260℃左右(例如为250℃～300℃)。背面保护薄膜11因包含环氧树脂而能够耐受所述温度。
该工序中，优选进行保护芯片5与被粘物6的对侧面(电极形成面)、间隙的清洗。作为清洗所用的清洗液，没有特别限定，例如可列举出有机系的清洗液、水系的清洗液。
接着，进行密封工序，其用于密封进行了倒装芯片接合的保护芯片5与被粘物6之间的间隙。密封工序使用密封树脂来进行。作为此时的密封条件，没有特别限定，通常通过以175℃进行60秒钟～90秒钟的加热来进行密封树脂的热固化，但本发明不限定于此，例如可以以165℃～185℃固化(cure)数分钟。另外，通过该工序，能够使背面保护薄膜11完全或大致完全地进行热固化。进而，背面保护薄膜11即使为未固化状态，在该密封工序时也能够与密封材料一同热固化，因此，无需重新追加用于使背面保护薄膜11热固化的工序。
作为密封树脂，只要是具有绝缘性的树脂(绝缘树脂)就没有特别限定。作为密封树脂，更优选为具有弹性的绝缘树脂。作为密封树脂，例如可列举出包含环氧树脂的树脂组合物等。另外，作为由包含环氧树脂的树脂组合物得到的密封树脂，作为树脂成分，除了环氧树脂之外，还可以包含环氧树脂以外的热固性树脂(酚醛树脂等)、热塑性树脂等。需要说明的是，作为酚醛树脂，也可以用作环氧树脂的固化剂。密封树脂的形状为薄膜状、平板状等。
通过如上方法得到的半导体装置(倒装芯片安装的半导体装置)包括被粘物6和固定于被粘物6的保护芯片5。能够利用激光对所述半导体装置的背面保护薄膜11进行印刷。需要说明的是，激光印刷时，可以利用公知的激光标记装置。另外，作为激光，可以利用气体激光、固体激光、液体激光等。具体而言，作为气体激光，没有特别限定，可以利用公知的气体激光，适合为二氧化碳激光(CO2激光)、准分子激光(ArF激光、KrF激光、XeCl激光、XeF激光等)。另外，作为固体激光，没有特别限定，可以利用公知的固体激光，适合为YAG激光(Nd：YAG激光等)、YVO4激光。
以倒装芯片安装方式进行安装而得到的半导体装置与以芯片接合安装方式进行安装而得到的半导体装置相比薄且小。因此，可适合地用作各种电子设备/电子部件或它们的材料/构件。具体而言，作为利用倒装芯片安装半导体装置的电子设备，可列举出所谓的“手机”、“PHS(personal handyphonesystem，个人手持机系统)”、小型计算机(例如所谓的“PDA”(便携信息终端)、所谓“笔记本电脑”、所谓“NETBOOK(商标)”、所谓的“可穿戴电脑”等)、“手机”与计算机一体化而成的小型电子设备、所谓的“Digital Camera(商标)”、所谓的“数字式摄像机”、小型电视、小型游戏机、小型数字式音频播放器、所谓的“电子记事本”、所谓的“电子词典”、所谓的“电子书”用电子设备终端、小型数字式钟表等移动型电子设备(可携带的电子设备)等，当然，还可以是移动型以外(设置型等)的电子设备(例如所谓的“台式计算机”、薄型电视、录像/播放用电子设备(硬盘记录器、DVD播放器等)、投影仪、微型机械等)等。另外，作为电子部件或者电子设备/电子部件的材料/构件，例如可列举出所谓的“CPU”的构件、各种存储装置(所谓的“存储器”、硬盘等)的构件等。
如上所述，半导体装置的制造方法包括：将背面保护薄膜11与半导体晶片4进行粘贴的工序、以及通过切割而形成保护芯片5的工序。半导体装置的制造方法还包括：在形成保护芯片5的工序之后，用红外线照相机88隔着背面保护薄膜11拍摄半导体元件41的工序。拍摄半导体元件41的工序优选为用红外线照相机88隔着背面保护薄膜11和切割带12拍摄半导体元件41的工序。
半导体装置的制造方法还包括将保护芯片5固定于被粘物6的工序。将保护芯片5固定于被粘物6的工序优选是通过倒装芯片连接而将保护芯片5固定于被粘物6的工序。
(变形例1)
如图7所示那样，切割带12的整个粘合面与背面保护薄膜11接触。粘合剂层122优选具有利用辐射线而进行固化的性质。
(变形例2)
粘合剂层122的接触部122A具有利用辐射线而进行固化的性质。粘合剂层122的周边部122B也具有利用辐射线而进行固化的性质。
(变形例3)
粘合剂层122的接触部122A通过辐射线而进行了固化。粘合剂层122的周边部122B也利用辐射线而进行了固化。
(变形例4)
背面保护薄膜11呈现包括第1层和配置在第1层上的第2层的多层形状。
(其它变形例)
变形例1～变形例4等可任意地组合。
[实施方式2]
(薄膜9)
如图8所示那样，薄膜9包括隔离膜14、配置在隔离膜14上的背面保护薄膜11、以及配置在背面保护薄膜11上的隔离膜15。
对于背面保护薄膜11而言，可以用其与隔离膜14接触的第1面和位于第1面的对侧的第2面来定义两个表面。第2面与隔离膜15接触。
作为隔离膜14，可列举出聚对苯二甲酸乙二醇酯(PET)薄膜等。隔离膜14优选实施了脱模处理。隔离膜14的厚度可适当设定。
作为隔离膜15，可列举出聚对苯二甲酸乙二醇酯(PET)薄膜等。隔离膜15优选实施了脱模处理。隔离膜15的厚度可适当设定。
(半导体装置的制造方法)
半导体装置的制造方法包括如下工序：在背面保护薄膜11上粘贴半导体晶片4的工序、以及通过切割而形成保护芯片5的工序。半导体装置的制造方法还包括包含如下步骤的工序：剥掉隔离膜14的步骤、以及在剥掉隔离膜14的步骤后将背面保护薄膜11与切割带12进行粘贴的步骤。在背面保护薄膜11上粘贴半导体晶片4的工序包括：剥掉隔离膜15的步骤、在剥掉隔离膜15的步骤之后在背面保护薄膜11上粘贴半导体晶片4的步骤。
半导体装置的制造方法还包括在形成保护芯片5的工序之后，用红外线照相机88隔着背面保护薄膜11拍摄半导体元件41的工序。拍摄半导体元件41的工序优选为用红外线照相机88隔着背面保护薄膜11和切割带12拍摄半导体元件41的工序。
半导体装置的制造方法还包括将保护芯片5固定于被粘物6的工序。将保护芯片5固定于被粘物6的工序优选为通过倒装芯片连接将保护芯片5固定于被粘物6的工序。
(变形例1)
背面保护薄膜11呈现包括第1层和配置在第1层上的第2层的多层形状。
实施例
以下例示性地详细说明本发明的适合实施例。其中，在没有特别限定性记载的情况下，该实施例中记载的材料、配混量等并不表示将本发明的范围仅限定于这些材料、配混量。
[背面保护薄膜的制作]
针对用于制作背面保护薄膜的成分进行说明。
环氧树脂：DIC Corporation制造、“HP-4700”
酚醛树脂：明和化成株式会社制造、“MEH-7851H”
丙烯酸类橡胶：Nagase ChemteX Corporation.制造、“Teisan Resin SG-P3”
二氧化硅填料：Admatechs.公司制造、“SE-2050-MCV“(平均一次粒径为0.5μm)
着色剂1：Orient Chemical Industries Co.,Ltd.制造、“SOM-L-0489”
着色剂2：Orient Chemical Industries Co.,Ltd.制造、“NUBIAN BLACKTN877”
着色剂3：有本化学工业株式会社制造、“SDO-7”
着色剂4：Orient Chemical Industries Co.,Ltd.制造、“ORIPACS B-35”
着色剂5：Orient Chemical Industries Co.,Ltd.制造、“SOM-L-0543”
按照表1所述的配混比，将各成分溶于甲乙酮，从而制备固体成分浓度为22重量％的粘接剂组合物的溶液。将粘接剂组合物的溶液涂布在剥离衬垫(进行了有机硅脱模处理且厚度为50μm的聚对苯二甲酸乙二醇酯薄膜)上，然后以130℃干燥2分钟，从而制作厚度为25μm的背面保护薄膜。
[背面保护薄膜的相关评价]
针对背面保护薄膜进行以下评价。将结果示于表1。
(平行光线透过率)
针对背面保护薄膜(厚度：25μm)，按照下述条件测定波长800nm的平行光线透过率(％)、波长532nm的平行光线透过率(％)。
<光线透过率测定条件>
测定装置：紫外可见近红外分光光度计V-670DS(日本分光株式会社制造)
速度：2000nm/分钟
测定范围：400～1600nm
(IR检测)
在被研磨至厚度为200μm的带电路芯片MB50-0101JY_TYPE-B(WALTS公司制造)的背面上，以70度安装背面保护薄膜，作为光源而使用Luminar AceLA-100IR(AS ONE Corporation制造)，利用显微镜SMZ 745P(NIKONCORPORATION制造)确认能否观察到电路面。能够观察到电路面的情况评价为○、无法观察到电路面的情况评价为×。
(激光标记性)
将背面保护薄膜以80度层压于8英寸的晶片，使用激光标记机(MD-S9900A/KEYENCE CORPORATION制造)，在0.3W×10kHz×300mm/s的条件下对背面保护薄膜施以激光标记。针对激光标识(条形码信息)，按照下述评价基准来评价激光标记性。
○：随机选择的10名成人之中，判断为能够良好地目视识别激光标识的人数为8人以上。
×：随机选择的10名成人之中，判断为能够良好地目视识别激光标识的人数为7人以下。
(凝胶率)
从背面保护薄膜取样约0.1g并精密称量(试样的重量)，将样品用网状片包裹后，在约50ml乙醇中以室温浸渍1星期。其后，将溶剂不溶成分(网状片的内容物)从乙醇中取出，以130℃干燥约2小时，称量干燥后的溶剂不溶成分(浸渍/干燥后的重量)，利用下述式(a)算出凝胶率(％)。
凝胶率(％)＝[(浸渍/干燥后的重量)/(试样的重量)]×100(a)
(拉伸储能模量)
使用Rheometric Scientific Ltd制造的动态粘弹性测定装置“SolidAnalyzer RS A2”，在拉伸模式下，在样品宽度：10mm、样品长度：22.5mm、样品厚度：0.2mm下，在频率：1Hz、升温速度：10℃/分钟、氮气气氛下，以规定温度(23℃)测定拉伸储能模量。
[表1]
(背面保护薄膜)
[切割带]
准备了日东电工株式会社制造的“V-8AR”、日东电工株式会社制造的“WS-01T”和日东电工株式会社制造的“DU-300”。
如图9所示那样，“V-8AR”具有基材921和配置在基材921上的粘合剂层922。基材921用其与粘合剂层922接触第1主面和位于第1主面的对侧的第2主面来定义两个表面。第2主面未进行压花加工。
“WS-01T”具有基材921和配置在基材921上的粘合剂层922。基材921用其与粘合剂层922接触的第1主面和位于第1主面的对侧的第2主面来定义两个表面。第2主面未进行压花加工。
“DU-300”具有基材921和配置在基材921上的粘合剂层922。基材921用其与粘合剂层922接触的第1主面和位于第1主面的对侧的第2主面来定义两个表面。第2主面进行了压花加工。
[切割带的相关评价平行光线透过率]
针对“V-8AR”、“WS-01T”和“DU-300”，按照下述条件测定波长800nm的平行光线透过率(％)。将结果示于表2。
<光线透过率测定条件>
测定装置：紫外可见近红外分光光度计V-670DS(日本分光株式会社制造)
速度：2000nm/分钟
测定范围：400～1600nm
[表2]
(切割带
[一体型薄膜的制作]
(实施例3)
将实施例1中得到的背面保护薄膜与“V-8AR”进行粘贴，从而得到一体型薄膜。
(实施例4)
将实施例1中得到的背面保护薄膜与“WS-01T”进行粘贴，从而得到一体型薄膜。
(比较例4)
将实施例1中得到的背面保护薄膜与“DU-300”进行粘贴，从而得到一体型薄膜。
[一体型薄膜的相关评价]
针对一体型薄膜进行以下的评价。将结果示于表3。
(平行光线透过率)
按照下述条件测定波长800nm的平行光线透过率(％)。
<光线透过率测定条件>
测定装置：紫外可见近红外分光光度计V-670DS(日本分光株式会社制造)
速度：2000nm/分钟
测定范围：400～1600nm
(IR检测)
在被研磨至厚度为200μm的带电路芯片MB50-0101JY_TYPE-B(WALTS公司制造)的背面上，以70度安装一体型薄膜，作为光源而使用Luminar AceLA-100IR(AS ONE Corporation制造)，利用显微镜SMZ 745P(NIKONCORPORATION制造)确认是否能够观察到电路面。能够观察到电路面的情况评价为○、无法观察到电路面的情况评价为×。
[表3]
(一体型薄膜)

Claims (7)

1.一种背面保护薄膜，其用于保护半导体元件的背面，波长800nm的平行光线透过率为15％以上。
2.根据权利要求1所述的背面保护薄膜，其中，波长800nm的平行光线透过率相对于波长532nm的平行光线透过率之比、即波长800nm的平行光线透过率/波长532nm的平行光线透过率为2以上。
3.一种一体型薄膜，其包括：
包含基材和配置在所述基材上的粘合剂层、且波长800nm的平行光线透过率为20％以上的切割带；以及
配置在所述粘合剂层上的权利要求1或2所述的背面保护薄膜。
4.根据权利要求3所述的一体型薄膜，其中，波长800nm的平行光线透过率为15％以上。
5.一种薄膜，其包括：
隔离膜、以及
配置在所述隔离膜上的权利要求1或2所述的背面保护薄膜。
6.一种半导体装置的制造方法，其包括如下工序：
将波长800nm的平行光线透过率为15％以上的背面保护薄膜与半导体晶片进行粘贴的工序；以及
通过切割而形成保护芯片的工序，所述保护芯片包含半导体元件和配置在所述半导体元件的背面上的所述背面保护薄膜。
7.一种保护芯片的制造方法，其包括如下工序：
将波长800nm的平行光线透过率为15％以上的背面保护薄膜与半导体晶片进行粘贴的工序；以及
通过切割而形成保护芯片的工序，所述保护芯片包含半导体元件和配置在所述半导体元件的背面上的所述背面保护薄膜。
CN201610273102.XA 2015-04-30 2016-04-28 背面保护薄膜、一体型薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法 Pending CN106084597A (zh)

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