JP2016213244A - 半導体素子の裏面を保護するための裏面保護フィルム、一体型フィルム、フィルム、半導体装置の製造方法および保護チップの製造方法 - Google Patents
半導体素子の裏面を保護するための裏面保護フィルム、一体型フィルム、フィルム、半導体装置の製造方法および保護チップの製造方法 Download PDFInfo
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- JP2016213244A JP2016213244A JP2015093158A JP2015093158A JP2016213244A JP 2016213244 A JP2016213244 A JP 2016213244A JP 2015093158 A JP2015093158 A JP 2015093158A JP 2015093158 A JP2015093158 A JP 2015093158A JP 2016213244 A JP2016213244 A JP 2016213244A
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Abstract
【解決手段】波長800nmの平行光線透過率が15%以上である、半導体素子の裏面を保護するための裏面保護フィルムに関する。裏面保護フィルムにおける波長800nmの平行光線透過率の波長532nmの平行光線透過率に対する比が、好ましくは2以上である。
【選択図】 図1
Description
(フィルム1)
図1および図2に示すように、フィルム1は、セパレータ13およびセパレータ13上に配置された裏面保護フィルム11を含む。より具体的には、フィルム1は、セパレータ13およびセパレータ13上に配置された一体型フィルム71a、71b、71c、……、71m(以下、「一体型フィルム71」と総称する。)を含む。一体型フィルム71aと一体型フィルム71bのあいだの距離、一体型フィルム71bと一体型フィルム71cのあいだの距離、……一体型フィルム71lと一体型フィルム71mのあいだの距離は一定である。フィルム1はロール状をなすことができる。
裏面保護フィルム11における波長800nmの平行光線透過率は15%以上、好ましくは20%以上、より好ましくは30%以上である。15%以上であることにより、赤外線カメラで裏面保護フィルム11越しに半導体素子のクラックをとらえることができる。30%以上であることにより、クラックを精度よくとらえることができる。
1000である。
セパレータ13としては、ポリエチレンテレフタレート(PET)フィルムなどが挙げられる。セパレータ13は、好ましくは離型処理が施されたものである。セパレータ13の厚みは適宜設定できる。
一体型フィルム71は、ダイシングテープ12およびダイシングテープ12上に配置された裏面保護フィルム11を含む。ダイシングテープ12は、基材121および基材121上に配置された粘着剤層122を含む。基材121は、粘着剤層122と接する第1主面、および第1主面に対向した第2主面で両面を定義できる。粘着剤層122は、裏面保護フィルム11と接する接触部122Aを含む。粘着剤層122は、接触部122Aの周辺に配置された周辺部122Bをさらに含む。接触部122Aは放射線により硬化されている。一方、周辺部122Bは放射線により硬化する性質を有する。放射線としては紫外線が好ましい。
図3に示すように、裏面保護フィルム11と半導体ウエハ4を貼り合わせる。具体的には、セパレータ13を剥離し、一体型フィルム71と半導体ウエハ4を貼り合わせる。これにより、半導体ウエハ4の裏面上に裏面保護フィルム11が設けられる。半導体ウエハ4は、回路面、および回路面に対向した裏面(非回路面、非電極形成面などとも称される)で両面を定義できる。貼り合わせ方法は特に限定されないが、圧着が好ましい。圧着は、通常、圧着ロールなどの押圧手段により押圧しながら行われる。半導体ウエハ4としては、シリコンウエハを好適に用いることができる。
図7に示すように、ダイシングテープ12における粘着面の全体が、裏面保護フィルム11と接する。粘着剤層122は、放射線により硬化する性質を有することが好ましい。
粘着剤層122の接触部122Aは放射線により硬化する性質を有する。粘着剤層122の周辺部122Bも放射線により硬化する性質を有する。
粘着剤層122の接触部122Aは放射線により硬化されている。粘着剤層122の周辺部122Bも放射線により硬化されている。
裏面保護フィルム11は、第1層および第1層上配置された第2層を含む複層形状をなす。
変形例1〜変形例4などは、任意に組み合わせることができる。
(フィルム9)
図8に示すように、フィルム9は、セパレータ14、セパレータ14上に配置された裏面保護フィルム11および裏面保護フィルム11上に配置されたセパレータ15を含む。
裏面保護フィルム11は、セパレータ14と接する第1面、および第1面に対向した第2面で両面を定義できる。第2面はセパレータ15と接する。
半導体装置の製造方法は、裏面保護フィルム11に半導体ウエハ4を貼りつける工程と、ダイシングにより保護チップ5を形成する工程とを含む。半導体装置の製造方法は、セパレータ14を剥離するステップ、およびセパレータ14を剥離するステップの後に裏面保護フィルム11とダイシングテープ12を貼り合わせるステップを含む工程をさらに含む。裏面保護フィルム11に半導体ウエハ4を貼りつける工程は、セパレータ15を剥離するステップ、セパレータ15を剥離するステップの後に裏面保護フィルム11に半導体ウエハ4を貼りつけるステップを含む。
裏面保護フィルム11は、第1層および第1層上配置された第2層を含む複層形状をなす。
裏面保護フィルムを作製するために使用した成分について説明する。
エポキシ樹脂:DIC社製「HP−4700」
フェノール樹脂:明和化成社製「MEH−7851H」
アクリルゴム:ナガセケムテックス社製「テイサンレジンSG−P3」
シリカフィラー:アドマテックス社製「SE−2050−MCV」(平均一次粒径0.5μm)
着色剤1:オリエント化学工業社製「SOM−L−0489」
着色剤2:オリエント化学工業社製「NUBIAN BLACK TN877」
着色剤3:有本化学工業社製「SDO−7」
着色剤4:オリエント化学工業社製「ORIPACS B−35」
着色剤5:オリエント化学工業社製「SOM−L−0543」
裏面保護フィルムについて、以下の評価を行った。結果を表1に示す。
裏面保護フィルム(厚さ:25μm)について下記の条件にて波長800nmの平行光線透過率(%)、波長532nmの平行光線透過率(%)を測定した。
<光線透過率測定条件>
測定装置: 紫外可視近赤外分光光度計V−670DS(日本分光株式会社製)
速度: 2000nm/min
測定範囲: 400〜1600nm
厚み200μmに研削された回路付チップMB50−0101JY_TYPE−B(WALTS社製)の裏面に裏面保護フィルムを70度にてマウントし、光源としてルミナエースLA−100IR(アズワン社製)を用い、顕微鏡SMZ745P(ニコン社製)によって、回路面が観察できるか否かを確認した。回路面を観察できた場合を○と判定し、観察できなかった場合を×を判定した。
裏面保護フィルムを80度にて8inchウエハにラミネートし、レーザーマーカー(MD−S9900A/キーエンス社製)を用い、0.3W x 10kHz x 300mm/sで裏面保護フィルムにレーザーマーキングを施した。レーザーマーク(バーコード情報)について、下記の評価基準により、レーザーマーキング性を評価した。
○:無作為に選んだ成人10人中、レーザーマークを良好に視認できると判断した人数が8人以上である。
×:無作為に選んだ成人10人中、レーザーマークを良好に視認できると判断した人数が7人以下である。
裏面保護フィルムから約0.1gをサンプリングして精秤し(試料の重量)、サンプルをメッシュ状シートで包んだ後、約50mlのエタノール中に室温で1週間浸漬させた。その後、溶剤不溶分(メッシュ状シートの内容物)をエタノールから取り出し、130℃で約2時間乾燥させ、乾燥後の溶剤不溶分を秤量し(浸漬・乾燥後の重量)、下記式(a)よりゲル分率(%)を算出した。
ゲル分率(%)=[(浸漬・乾燥後の重量)/(試料の重量)]×100 (a)
レオメトリック社製の動的粘弾性測定装置「Solid Analyzer RS A2」を用いて、引張モードにて、サンプル幅:10mm、サンプル長さ:22.5mm、サンプル厚み:0.2mmで、周波数:1Hz、昇温速度:10℃/分、窒素雰囲気下、所定の温度(23℃)にて、引張貯蔵弾性率を測定した。
日東電工社製「V−8AR」、日東電工社製「WS−01T」および日東電工社製「DU−300」を用意した。
「V−8AR」、「WS−01T」および「DU−300」について下記の条件にて波長800nmの平行光線透過率(%)を測定した。結果を表2に示す。
<光線透過率測定条件>
測定装置: 紫外可視近赤外分光光度計V−670DS(日本分光株式会社製)
速度: 2000nm/min
測定範囲: 400〜1600nm
(実施例3)
実施例1で得られた裏面保護フィルムと「V−8AR」を貼り合わせ、一体型フィルムを得た。
(実施例4)
実施例1で得られた裏面保護フィルムと「WS−01T」を貼り合わせ、一体型フィルムを得た。
(比較例4)
実施例1で得られた裏面保護フィルムと「DU−300」を貼り合わせ、一体型フィルムを得た。
一体型フィルムについて、以下の評価を行った。結果を表3に示す。
下記の条件にて波長800nmの平行光線透過率(%)を測定した。
<光線透過率測定条件>
測定装置: 紫外可視近赤外分光光度計V−670DS(日本分光株式会社製)
速度: 2000nm/min
測定範囲: 400〜1600nm
厚み200μmに研削された回路付チップMB50−0101JY_TYPE−B(WALTS社製)の裏面に一体型フィルムを70度にてマウントし、光源としてルミナエースLA−100IR(アズワン社製)を用い、顕微鏡SMZ745P(ニコン社製)によって、回路面が観察できるか否かを確認した。回路面を観察できた場合を○と判定し、観察できなかった場合を×を判定した。
11 裏面保護フィルム
12 ダイシングテープ
13 セパレータ
71 一体型フィルム
121 基材
122 粘着剤層
122A 接触部
122B 周辺部
5 保護チップ
6 被着体
8 吸着台
41 半導体素子
51 バンプ
61 導電材
88 赤外線カメラ
922 粘着剤層
Claims (7)
- 波長800nmの平行光線透過率が15%以上である、半導体素子の裏面を保護するための裏面保護フィルム。
- 波長800nmの平行光線透過率の波長532nmの平行光線透過率に対する比(波長800nmの平行光線透過率/波長532nmの平行光線透過率)が2以上である請求項1に記載の裏面保護フィルム。
- 基材および前記基材上に配置された粘着剤層を含み、波長800nmの平行光線透過率が20%以上であるダイシングテープと、
前記粘着剤層上に配置された、請求項1または2に記載の裏面保護フィルムとを含む一体型フィルム。 - 波長800nmの平行光線透過率が15%以上である請求項3に記載の一体型フィルム。
- セパレータと、
前記セパレータ上に配置された、請求項1または2に記載の裏面保護フィルムとを含むフィルム。 - 波長800nmの平行光線透過率が15%以上である裏面保護フィルムと半導体ウエハを貼り合わせる工程と、
ダイシングにより、半導体素子および前記半導体素子の裏面上に配置された前記裏面保護フィルムを含む保護チップを形成する工程とを含む半導体装置の製造方法。 - 波長800nmの平行光線透過率が15%以上である裏面保護フィルムと半導体ウエハを貼り合わせる工程と、
ダイシングにより、半導体素子および前記半導体素子の裏面上に配置された前記裏面保護フィルムを含む保護チップを形成する工程とを含む保護チップの製造方法。
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JP2015093158A JP6415383B2 (ja) | 2015-04-30 | 2015-04-30 | 半導体素子の裏面を保護するための裏面保護フィルム、一体型フィルム、フィルム、半導体装置の製造方法および保護チップの製造方法 |
CN201610273102.XA CN106084597A (zh) | 2015-04-30 | 2016-04-28 | 背面保护薄膜、一体型薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法 |
US15/141,336 US20160322252A1 (en) | 2015-04-30 | 2016-04-28 | Rear surface-protective film for protecting rear surface of semiconductor element, integrated film, film, method for producing semiconductor device, and method for producing chip |
KR1020160052169A KR20160129758A (ko) | 2015-04-30 | 2016-04-28 | 반도체 소자의 이면을 보호하기 위한 이면 보호 필름, 일체형 필름, 필름, 반도체 장치의 제조 방법 및 보호 칩의 제조 방법 |
TW105113560A TW201700677A (zh) | 2015-04-30 | 2016-04-29 | 用以保護半導體元件之背面之背面保護膜、一體型薄膜、薄膜、半導體裝置之製造方法及保護晶片之製造方法 |
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JP6388752B1 (ja) * | 2017-02-09 | 2018-09-12 | リンテック株式会社 | 硬化性樹脂フィルム及び第1保護膜形成用シート |
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