CN106068565B - 受应力鳍NMOS FinFET的方法和装置 - Google Patents

受应力鳍NMOS FinFET的方法和装置 Download PDF

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Publication number
CN106068565B
CN106068565B CN201580010571.6A CN201580010571A CN106068565B CN 106068565 B CN106068565 B CN 106068565B CN 201580010571 A CN201580010571 A CN 201580010571A CN 106068565 B CN106068565 B CN 106068565B
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CN
China
Prior art keywords
fin
region
embedded
stressor element
channel region
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Expired - Fee Related
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CN201580010571.6A
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English (en)
Chinese (zh)
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CN106068565A (zh
Inventor
J·J·徐
C·F·耶普
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN201580010571.6A 2014-02-28 2015-02-17 受应力鳍NMOS FinFET的方法和装置 Expired - Fee Related CN106068565B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461946105P 2014-02-28 2014-02-28
US61/946,105 2014-02-28
US14/281,660 2014-05-19
US14/281,660 US9306066B2 (en) 2014-02-28 2014-05-19 Method and apparatus of stressed FIN NMOS FinFET
PCT/US2015/016081 WO2015130507A1 (en) 2014-02-28 2015-02-17 Method and apparatus of stressed fin nmos finfet

Publications (2)

Publication Number Publication Date
CN106068565A CN106068565A (zh) 2016-11-02
CN106068565B true CN106068565B (zh) 2019-05-10

Family

ID=54007149

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580010571.6A Expired - Fee Related CN106068565B (zh) 2014-02-28 2015-02-17 受应力鳍NMOS FinFET的方法和装置

Country Status (5)

Country Link
US (1) US9306066B2 (https=)
EP (1) EP3111481A1 (https=)
JP (1) JP2017506830A (https=)
CN (1) CN106068565B (https=)
WO (1) WO2015130507A1 (https=)

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US9391074B1 (en) * 2015-04-21 2016-07-12 International Business Machines Corporation Structure for FinFET fins
CN106549053B (zh) * 2015-09-17 2021-07-27 联华电子股份有限公司 半导体结构及其制作方法
US9904758B2 (en) * 2016-05-18 2018-02-27 Samsung Electronics Co., Ltd. Using deep sub-micron stress effects and proximity effects to create a high performance standard cell
WO2018063194A1 (en) * 2016-09-28 2018-04-05 Intel Corporation Systems, methods and devices for isolation for subfin leakage
US10276693B1 (en) * 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10374089B2 (en) 2017-12-22 2019-08-06 International Business Machines Corporation Tensile strain in NFET channel

Citations (3)

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US20030111699A1 (en) * 2001-12-14 2003-06-19 Christoph Wasshuber Methods and apparatus for inducing stress in a semiconductor device
US20110198695A1 (en) * 2010-02-18 2011-08-18 International Business Machines Corporation Strained Semiconductor Structures and Method of Fabricating Strained Semiconductor Structures
CN101924107B (zh) * 2010-07-15 2012-09-26 电子科技大学 一种应力增强的cmos晶体管结构

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US6887751B2 (en) 2003-09-12 2005-05-03 International Business Machines Corporation MOSFET performance improvement using deformation in SOI structure
US8450806B2 (en) * 2004-03-31 2013-05-28 International Business Machines Corporation Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby
JP2007088158A (ja) * 2005-09-21 2007-04-05 Toshiba Corp 半導体装置およびその製造方法
US20070257310A1 (en) 2006-05-02 2007-11-08 Honeywell International Inc. Body-tied MOSFET device with strained active area
US7462916B2 (en) 2006-07-19 2008-12-09 International Business Machines Corporation Semiconductor devices having torsional stresses
US20080121948A1 (en) 2006-08-16 2008-05-29 International Business Machines Corporation FINFET drive strength de-quantization using multiple orientation fins
US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
WO2011121776A1 (ja) 2010-03-31 2011-10-06 株式会社 東芝 半導体装置の製造方法
US8278175B2 (en) 2010-06-10 2012-10-02 International Business Machines Corporation Compressively stressed FET device structures
US8647935B2 (en) 2010-12-17 2014-02-11 International Business Machines Corporation Buried oxidation for enhanced mobility
US8492235B2 (en) * 2010-12-29 2013-07-23 Globalfoundries Singapore Pte. Ltd. FinFET with stressors
US8981481B2 (en) 2012-06-28 2015-03-17 Intel Corporation High voltage three-dimensional devices having dielectric liners
US8823060B1 (en) 2013-02-20 2014-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for inducing strain in FinFET channels
US8969155B2 (en) * 2013-05-10 2015-03-03 International Business Machines Corporation Fin structure with varying isolation thickness

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111699A1 (en) * 2001-12-14 2003-06-19 Christoph Wasshuber Methods and apparatus for inducing stress in a semiconductor device
US20110198695A1 (en) * 2010-02-18 2011-08-18 International Business Machines Corporation Strained Semiconductor Structures and Method of Fabricating Strained Semiconductor Structures
CN101924107B (zh) * 2010-07-15 2012-09-26 电子科技大学 一种应力增强的cmos晶体管结构

Also Published As

Publication number Publication date
US20150249155A1 (en) 2015-09-03
CN106068565A (zh) 2016-11-02
US9306066B2 (en) 2016-04-05
EP3111481A1 (en) 2017-01-04
WO2015130507A1 (en) 2015-09-03
JP2017506830A (ja) 2017-03-09

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