CN106062958B - 用于双向器件制造的系统和方法 - Google Patents

用于双向器件制造的系统和方法 Download PDF

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Publication number
CN106062958B
CN106062958B CN201480065680.3A CN201480065680A CN106062958B CN 106062958 B CN106062958 B CN 106062958B CN 201480065680 A CN201480065680 A CN 201480065680A CN 106062958 B CN106062958 B CN 106062958B
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China
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wafer
temperature
face
high temperature
conductivity type
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CN201480065680.3A
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English (en)
Chinese (zh)
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CN106062958A (zh
Inventor
理查德·A·布兰查德
威廉·C·亚历山大
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Ideal Power Inc
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Ideal Power Inc
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Priority claimed from US14/313,960 external-priority patent/US9029909B2/en
Application filed by Ideal Power Inc filed Critical Ideal Power Inc
Publication of CN106062958A publication Critical patent/CN106062958A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/101—Three-dimensional [3D] integrated devices comprising components on opposite major surfaces of semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H10D18/021—Manufacture or treatment of bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201480065680.3A 2013-12-11 2014-12-10 用于双向器件制造的系统和方法 Active CN106062958B (zh)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201361914491P 2013-12-11 2013-12-11
US61/914,491 2013-12-11
US201461924884P 2014-01-08 2014-01-08
US61/924,884 2014-01-08
US201461928644P 2014-01-17 2014-01-17
US61/928,644 2014-01-17
US201461929874P 2014-01-21 2014-01-21
US61/929,874 2014-01-21
US14/313,960 2014-06-24
US14/313,960 US9029909B2 (en) 2013-06-24 2014-06-24 Systems, circuits, devices, and methods with bidirectional bipolar transistors
PCT/US2014/069611 WO2015089227A1 (en) 2013-12-11 2014-12-10 Systems and methods for bidirectional device fabrication

Publications (2)

Publication Number Publication Date
CN106062958A CN106062958A (zh) 2016-10-26
CN106062958B true CN106062958B (zh) 2019-11-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480065680.3A Active CN106062958B (zh) 2013-12-11 2014-12-10 用于双向器件制造的系统和方法

Country Status (5)

Country Link
EP (1) EP3055884B8 (https=)
JP (1) JP6542775B2 (https=)
CN (1) CN106062958B (https=)
GB (1) GB2531485B (https=)
WO (1) WO2015089227A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872979A (zh) * 2019-02-14 2019-06-11 南通通富微电子有限公司 一种扇出型封装器件
WO2025259387A1 (en) * 2024-06-11 2025-12-18 Ideal Power Inc. Methods of manufacturing bipolar junction devices

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US5108945A (en) * 1990-01-10 1992-04-28 Microunity Systems Engineering, Inc. Process for fabricating polysilicon resistors and interconnects
US5608237A (en) * 1994-03-14 1997-03-04 Kabushiki Kaisha Toshiba Bidirectional semiconductor switch
US20050090107A1 (en) * 2003-10-21 2005-04-28 Draney Nathan R. Substrate with enhanced properties for planarization
CN1691349A (zh) * 2004-04-28 2005-11-02 三菱电机株式会社 反向导通型半导体元件及其制造方法
WO2007094824A2 (en) * 2006-02-13 2007-08-23 Wisconsin Alumni Research Foundation Method for double-sided processing of thin film transistors
CN101552465A (zh) * 2008-04-04 2009-10-07 半导体元件工业有限责任公司 瞬变电压抑制器和方法
CN102172826A (zh) * 2010-12-29 2011-09-07 杭州东华链条集团有限公司 一种正时链条的装配方法及装配装置
US20120222734A1 (en) * 2010-09-02 2012-09-06 Pvg Solutions Inc. Solar battery cell and method of manufacturing the same

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GB2269938B (en) * 1990-01-10 1994-09-07 Microunity Systems Eng Method of forming self-aligned contacts in a semi-conductor process
JP2003158131A (ja) * 2001-09-04 2003-05-30 Sanken Electric Co Ltd 半導体素子の製造方法
JP2004119498A (ja) * 2002-09-24 2004-04-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
DE102004005384B4 (de) 2004-02-03 2006-10-26 De Doncker, Rik W., Prof. Dr. ir. Bidirektionales, MOS-gesteuertes Halbleiterbauelement, Verfahren zu seinem Betreiben, Verfahren zu seiner Herstellung und seine Verwendung
US7599196B2 (en) 2006-06-06 2009-10-06 Ideal Power Converters, Inc. Universal power converter
WO2011022442A2 (en) 2009-08-17 2011-02-24 Ideal Power Converters Inc. Power conversion with added pseudo-phase
DE102007058952A1 (de) 2007-09-24 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8163624B2 (en) * 2008-07-30 2012-04-24 Bowman Ronald R Discrete semiconductor device and method of forming sealed trench junction termination
KR20120130158A (ko) 2009-06-29 2012-11-29 아이디얼 파워 컨버터스, 인코포레이티드 에너지 전송 리액턴스를 단락시키는 크로바 스위치를 이용한 전력 전송 장치, 방법, 및 시스템
EP2317553B1 (en) * 2009-10-28 2012-12-26 STMicroelectronics Srl Double-sided semiconductor structure and method for manufacturing the same
US9159825B2 (en) * 2010-10-12 2015-10-13 Silanna Semiconductor U.S.A., Inc. Double-sided vertical semiconductor device with thinned substrate
WO2012075172A2 (en) 2010-11-30 2012-06-07 Ideal Power Converters Inc. Photovoltaic array systems, methods, and devices and improved diagnostics and monitoring
US20120279567A1 (en) 2011-02-18 2012-11-08 Ideal Power Converters Inc. Solar Energy System with Automatic Dehumidification of Electronics
US8531858B2 (en) 2011-02-18 2013-09-10 Ideal Power, Inc. Power conversion with current sensing coupled through saturating element
KR20130091200A (ko) * 2012-02-07 2013-08-16 삼성전자주식회사 트랜지스터 및 그 제조방법
CN104919595B (zh) * 2013-06-24 2019-06-07 理想能量有限公司 具有双向双极晶体管的系统、电路、器件和方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108945A (en) * 1990-01-10 1992-04-28 Microunity Systems Engineering, Inc. Process for fabricating polysilicon resistors and interconnects
US5608237A (en) * 1994-03-14 1997-03-04 Kabushiki Kaisha Toshiba Bidirectional semiconductor switch
US20050090107A1 (en) * 2003-10-21 2005-04-28 Draney Nathan R. Substrate with enhanced properties for planarization
CN1691349A (zh) * 2004-04-28 2005-11-02 三菱电机株式会社 反向导通型半导体元件及其制造方法
WO2007094824A2 (en) * 2006-02-13 2007-08-23 Wisconsin Alumni Research Foundation Method for double-sided processing of thin film transistors
CN101552465A (zh) * 2008-04-04 2009-10-07 半导体元件工业有限责任公司 瞬变电压抑制器和方法
US20120222734A1 (en) * 2010-09-02 2012-09-06 Pvg Solutions Inc. Solar battery cell and method of manufacturing the same
CN102172826A (zh) * 2010-12-29 2011-09-07 杭州东华链条集团有限公司 一种正时链条的装配方法及装配装置

Also Published As

Publication number Publication date
JP6542775B2 (ja) 2019-07-10
GB2531485B (en) 2016-06-22
WO2015089227A1 (en) 2015-06-18
GB2531485A (en) 2016-04-20
GB2531485A8 (en) 2016-06-29
EP3055884B8 (en) 2023-04-26
CN106062958A (zh) 2016-10-26
GB201602488D0 (en) 2016-03-30
EP3055884B1 (en) 2023-03-22
EP3055884A4 (en) 2016-12-07
JP2017509136A (ja) 2017-03-30
EP3055884A1 (en) 2016-08-17

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