CN106062932B - 半导体元件的清洗液和清洗方法 - Google Patents
半导体元件的清洗液和清洗方法 Download PDFInfo
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- CN106062932B CN106062932B CN201580011022.0A CN201580011022A CN106062932B CN 106062932 B CN106062932 B CN 106062932B CN 201580011022 A CN201580011022 A CN 201580011022A CN 106062932 B CN106062932 B CN 106062932B
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- mass
- ether
- cleaning solution
- sodium
- hydroxide
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- 238000004140 cleaning Methods 0.000 title claims abstract description 113
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000001312 dry etching Methods 0.000 claims abstract description 61
- 239000010941 cobalt Substances 0.000 claims abstract description 57
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 55
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 52
- 239000010937 tungsten Substances 0.000 claims abstract description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 25
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 19
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 18
- 239000003960 organic solvent Substances 0.000 claims abstract description 18
- 150000001339 alkali metal compounds Chemical class 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 101710171243 Peroxidase 10 Proteins 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 49
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 36
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 23
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 235000011118 potassium hydroxide Nutrition 0.000 claims description 16
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 15
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 15
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 15
- 235000019441 ethanol Nutrition 0.000 claims description 13
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 11
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical group [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 11
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 10
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 10
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 10
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 10
- NLSCHDZTHVNDCP-UHFFFAOYSA-N caesium nitrate Chemical compound [Cs+].[O-][N+]([O-])=O NLSCHDZTHVNDCP-UHFFFAOYSA-N 0.000 claims description 10
- FLJPGEWQYJVDPF-UHFFFAOYSA-L caesium sulfate Chemical compound [Cs+].[Cs+].[O-]S([O-])(=O)=O FLJPGEWQYJVDPF-UHFFFAOYSA-L 0.000 claims description 10
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 claims description 10
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 10
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 10
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 10
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 10
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 10
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 10
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 9
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims description 8
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 8
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 8
- -1 tetramethyl hydroxide Chemical compound 0.000 claims description 8
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 7
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 7
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 7
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 6
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 6
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 6
- 235000011151 potassium sulphates Nutrition 0.000 claims description 6
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 6
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 6
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 6
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 5
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 5
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 5
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 claims description 5
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 5
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 claims description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 5
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 5
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 5
- 241000360590 Erythrites Species 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 5
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims description 5
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 5
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims description 5
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 5
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 5
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 claims description 5
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 5
- 229940113088 dimethylacetamide Drugs 0.000 claims description 5
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 claims description 5
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 claims description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims description 5
- 239000001103 potassium chloride Substances 0.000 claims description 5
- 235000011164 potassium chloride Nutrition 0.000 claims description 5
- 239000011698 potassium fluoride Substances 0.000 claims description 5
- 235000003270 potassium fluoride Nutrition 0.000 claims description 5
- 239000004323 potassium nitrate Substances 0.000 claims description 5
- 235000010333 potassium nitrate Nutrition 0.000 claims description 5
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 claims description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 5
- 235000017550 sodium carbonate Nutrition 0.000 claims description 5
- 239000011775 sodium fluoride Substances 0.000 claims description 5
- 235000013024 sodium fluoride Nutrition 0.000 claims description 5
- 235000009518 sodium iodide Nutrition 0.000 claims description 5
- 239000004317 sodium nitrate Substances 0.000 claims description 5
- 235000010344 sodium nitrate Nutrition 0.000 claims description 5
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical group O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 5
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000811 xylitol Substances 0.000 claims description 5
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 5
- 229960002675 xylitol Drugs 0.000 claims description 5
- 235000010447 xylitol Nutrition 0.000 claims description 5
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 4
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 4
- ZMCUDHNSHCRDBT-UHFFFAOYSA-M caesium bicarbonate Chemical compound [Cs+].OC([O-])=O ZMCUDHNSHCRDBT-UHFFFAOYSA-M 0.000 claims description 4
- 229910000025 caesium bicarbonate Inorganic materials 0.000 claims description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 4
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 4
- 235000011152 sodium sulphate Nutrition 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- XXXFZKQPYACQLD-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl acetate Chemical compound CC(=O)OCCOCCO XXXFZKQPYACQLD-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 235000011181 potassium carbonates Nutrition 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 2
- 230000031709 bromination Effects 0.000 claims 2
- 238000005893 bromination reaction Methods 0.000 claims 2
- 235000017168 chlorine Nutrition 0.000 claims 2
- 229910052700 potassium Inorganic materials 0.000 claims 2
- 239000011591 potassium Substances 0.000 claims 2
- 150000004040 pyrrolidinones Chemical class 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 87
- 239000000243 solution Substances 0.000 description 64
- 230000000052 comparative effect Effects 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 26
- 230000004888 barrier function Effects 0.000 description 22
- 235000011114 ammonium hydroxide Nutrition 0.000 description 13
- 239000007864 aqueous solution Substances 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
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- 239000007789 gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
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- 150000003852 triazoles Chemical group 0.000 description 3
- IZXIZTKNFFYFOF-UHFFFAOYSA-N 2-Oxazolidone Chemical compound O=C1NCCO1 IZXIZTKNFFYFOF-UHFFFAOYSA-N 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000005605 benzo group Chemical group 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
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- 239000004744 fabric Substances 0.000 description 2
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- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
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- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
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- 239000000654 additive Substances 0.000 description 1
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- 229910021529 ammonia Inorganic materials 0.000 description 1
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 150000003851 azoles Chemical group 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- QNEFNFIKZWUAEQ-UHFFFAOYSA-N carbonic acid;potassium Chemical compound [K].OC(O)=O QNEFNFIKZWUAEQ-UHFFFAOYSA-N 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- UGWKCNDTYUOTQZ-UHFFFAOYSA-N copper;sulfuric acid Chemical compound [Cu].OS(O)(=O)=O UGWKCNDTYUOTQZ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002168 ethanoic acid esters Chemical class 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000015424 sodium Nutrition 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/105—Nitrates; Nitrites
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/12—Carbonates bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Abstract
根据本发明,可以提供一种半导体元件的清洗方法,其特征在于,对于半导体元件使用清洗液去除干法蚀刻残渣,所述半导体元件为在具有低介电常数膜以及钴、钴合金和钨插塞中的至少1种的基板上形成硬掩模图案,接着以该硬掩模图案作为掩模,对硬掩模、低介电常数膜和阻挡绝缘膜实施干法蚀刻处理而得到的,所述清洗液包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001~0.1质量%和水。
Description
技术领域
本发明涉及半导体集成电路的制造工序中抑制低介电常数膜、钨等布线材料、钴、硬掩模、阻隔金属、和阻挡绝缘膜的损伤、去除被处理表面的干法蚀刻残渣的清洗液和清洗方法。
背景技术
对于高集成化的半导体元件的制造,通常而言,一般采用在硅晶片等元件上形成为导电用布线原材料的金属膜等导电薄膜、以进行导电薄膜间的绝缘为目的的层间绝缘膜后,在其表面上均匀地涂布光致抗蚀剂来设置感光层,对其实施选择性曝光和显影处理来制作所希望的抗蚀图案。接着,通过将该抗蚀图案作为掩模在层间绝缘膜上实施干法蚀刻处理,从而在该薄膜上形成所希望的图案。随后,一般通过利用氧等离子体的灰化法、使用清洗液的清洗方法等完全去除抗蚀图案和由干法蚀刻处理产生的残渣物(以下,称为“干法蚀刻残渣”)等这样一系列的工序。
近年来,设计标准的微细化推进,信号传送延迟逐渐变得决定高速度演算处理的极限。因此,导电用布线原材料由铝向电阻更低的铜过渡,层间绝缘膜由硅氧化膜向低介电常数膜(相对介电常数小于3的膜。以下,称为“Low-k膜”)的过渡推进。然而,随着布线的微细化进行,在布线中流动的电流密度增大,因此,容易引起铜的电迁移。因此,提倡作为代替铜的可靠性高的布线材料使用钴的技术。另外,还有如下报道:导入钴合金作为铜的盖金属,从而能够抑制铜的电迁移。另外,0.2μm以下的布线图案时,以膜厚1μm涂布保护剂时,布线图案的长径比(保护膜厚除以保护膜线宽之比)变得过大,产生布线图案倒塌等问题。为了解决该问题,有时使用硬掩模法:在实际欲形成的图案膜与保护膜之间插入钛(Ti)系、硅(Si)系的膜(以下,称为“硬掩模”),暂时将抗蚀图案以干法蚀刻转印到硬掩模上,之后将该硬掩模作为蚀刻掩模,利用干法蚀刻将图案转印到实际欲形成的膜上。对于该方法,能够交换蚀刻硬掩模时的气体与蚀刻实际欲形成的膜时的气体。可以选择蚀刻硬掩模时取得与保护膜的选择比、蚀刻实际的膜时取得与硬掩模的选择比的气体,因此,存在能够以薄的保护膜形成图案的优点。另外,进行与基板的连接的接触插塞使用由钨形成的接触插塞(以下,称为“钨插塞(tungsten plug)”)。
用氧等离子体去除干法蚀刻残渣时,产生Low-k膜暴露于氧等离子体等而受到损伤、电特性明显劣化的问题。因此,使用Low-k膜的半导体元件制造中,要求抑制Low-k膜、钴、阻隔金属和阻挡绝缘膜的损伤、且与氧等离子体工序同等程度地去除干法蚀刻残渣的方法。进而,为了在接触插塞露出的层中也使用,有时也要求抑制钨的损伤。另外,使用硬掩模的情况下,也必须抑制对硬掩模的损伤。
专利文献1中提出了利用包含无机碱、季铵氢氧化物、有机溶剂、防腐蚀剂和水的清洗液的布线形成方法。然而,对于该清洗液,无法充分去除干法蚀刻残渣(参照后述的比较例5)。
专利文献2中提出了利用包含KOH、季铵氢氧化物、有机溶剂、吡唑和水的清洗液的布线形成方法。然而,对于该清洗液,无法充分去除干法蚀刻残渣(参照后述的比较例6)。
专利文献3中提出了使用苯并三唑等的钴的防腐蚀方法。然而,对于该方法,无法充分去除干法蚀刻残渣(参照后述的比较例7)。
专利文献4中提出了使用5-氨基-1H-四唑与1-羟基苯并三唑的组合的钴的防腐蚀方法。然而,对于该方法,无法充分去除干法蚀刻残渣(参照后述的比较例8)。
专利文献5中提出了利用包含氧化剂、季铵氢氧化物、链烷醇胺、碱金属氢氧化物和水的清洗液的布线形成方法。然而,对于该清洗液,虽然能够去除干法蚀刻残渣,但无法抑制钨、钴Low-k膜和硬掩模的损伤,无法用于本目的(参照后述的比较例9)。
专利文献6中提出了利用包含氧化剂、胺、季铵氢氧化物、碱金属氢氧化物、有机溶剂和水的清洗液的布线形成方法。然而,对于该清洗液,无法充分抑制钨和硬掩模的损伤,无法用于本目的(参照后述的比较例10)。
专利文献7中提出了使用铜(II)离子和苯并三唑等、在钴上形成防腐蚀膜的钴的防腐蚀方法。然而,对于该方法,虽然能够去除干法蚀刻残渣,但无法充分抑制钴的损伤(参照后述的比较例11)。
专利文献8中提出了利用包含氟化合物、金属防腐蚀剂、钝化剂和水的清洗液的布线形成方法。然而,对于该清洗液,无法充分去除干法蚀刻残渣,因此无法用于本目的(参照后述的比较例12)。
现有技术文献
专利文献
专利文献1:日本特开2011-118101号公报
专利文献2:国际公开第2013-187313号公报
专利文献3:日本特开2011-91248号公报
专利文献4:日本特开2012-182158号公报
专利文献5:日本特开2009-75285号公报
专利文献6:日本特开2009-231354号公报
专利文献7:日本特开平6-81177号公报
专利文献8:日本特开2013-533631号公报
发明内容
发明要解决的问题
本发明的目的在于,提供:半导体电路的制造工序中,抑制Low-k膜、钴或钴合金、钨插塞、硬掩模、阻隔金属和阻挡绝缘膜的损伤、去除被处理物表面的干法蚀刻残渣的清洗液和清洗方法。
用于解决问题的方案
本发明人等为了解决上述课题进行了深入研究,结果发现,通过以下的本发明可以解决上述课题。
即,本发明如以下所述。
<1>一种半导体元件的清洗方法,其特征在于,对于半导体元件使用清洗液去除干法蚀刻残渣,
所述半导体元件为在具有低介电常数膜以及钴、钴合金和钨插塞中的至少1种的基板上形成硬掩模图案,接着以该硬掩模图案作为掩模,对硬掩模、低介电常数膜和阻挡绝缘膜实施干法蚀刻处理而得到的,
所述清洗液包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001~0.1质量%和水。
<2>根据上述<1>所述的清洗方法,其中,前述碱金属化合物为选自由氢氧化钠、硫酸钠、碳酸钠、碳酸氢钠、硝酸钠、氟化钠、氯化钠、溴化钠、碘化钠、氢氧化钾、硫酸钾、碳酸钾、碳酸氢钾、硝酸钾、氟化钾、氯化钾、溴化钾、碘化钾、氢氧化铯、硫酸铯、碳酸铯、碳酸氢铯、硝酸铯、氟化铯、氯化铯、溴化铯和碘化铯组成的组中的至少1种以上。
<3>根据上述<1>或<2>所述的清洗方法,其中,前述季铵氢氧化物为选自由四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵和四丁基氢氧化铵组成的组中的至少1种以上。
<4>根据上述<1>至<3>中任一项所述的清洗方法,其中,前述水溶性有机溶剂为选自由乙醇、1-丙醇、2-丙醇、乙二醇、丙二醇、甘油、二乙二醇、二丙二醇、山梨糖醇、木糖醇、赤藓醇、季戊四醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、三乙二醇、四乙二醇、聚乙二醇、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚、二乙二醇二甲醚、二丙二醇二甲醚、乙二醇单乙酸酯、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、二乙二醇单乙酸酯、甲酰胺、N,N-二甲基甲酰胺、N,N-二乙基甲酰胺、乙酰胺、N,N-二甲基乙酰胺、N,N-二乙基乙酰胺、N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基砜、二甲基亚砜、1,3-二甲基-2-咪唑烷酮和环丁砜组成的组中的至少1种以上。
<5>一种基板,其是通过上述<1>至<4>中任一项所述的清洗方法制造的。
<6>一种清洗液,其为用于清洗半导体元件而去除干法蚀刻残渣的清洗液,
所述半导体元件为在具有低介电常数膜以及钴、钴合金和钨插塞中的至少1种的基板上形成硬掩模图案,接着以该硬掩模图案作为掩模,对硬掩模、低介电常数膜和阻挡绝缘膜实施干法蚀刻处理而得到的,
所述清洗液包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001~0.1质量%和水。
<7>根据上述<6>所述的清洗液,其中,前述清洗液不含链烷醇胺。
<8>根据上述<6>或<7>所述的清洗液,其中,前述清洗液仅包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001~0.1质量%和水。
<9>根据上述<6>至<8>中任一项所述的清洗液,其中,前述清洗液中的过氧化氢的含量为0.0001质量%以上且小于0.01质量%。
<10>根据上述<6>至<9>中任一项所述的清洗液,其中,前述碱金属化合物为选自由氢氧化钠、硫酸钠、碳酸钠、碳酸氢钠、硝酸钠、氟化钠、氯化钠、溴化钠、碘化钠、氢氧化钾、硫酸钾、碳酸钾、碳酸氢钾、硝酸钾、氟化钾、氯化钾、溴化钾、碘化钾、氢氧化铯、硫酸铯、碳酸铯、碳酸氢铯、硝酸铯、氟化铯、氯化铯、溴化铯和碘化铯组成的组中的至少1种以上。
<11>根据上述<6>至<10>中任一项所述的清洗液,其中,前述季铵氢氧化物为选自由四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵和四丁基氢氧化铵组成的组中的至少1种以上。
<12>根据上述<6>至<11>中任一项所述的清洗液,其中,前述水溶性有机溶剂为选自由乙醇、1-丙醇、2-丙醇、乙二醇、丙二醇、甘油、二乙二醇、二丙二醇、山梨糖醇、木糖醇、赤藓醇、季戊四醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、三乙二醇、四乙二醇、聚乙二醇、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚、二乙二醇二甲醚、二丙二醇二甲醚、乙二醇单乙酸酯、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、二乙二醇单乙酸酯、甲酰胺、N,N-二甲基甲酰胺、N,N-二乙基甲酰胺、乙酰胺、N,N-二甲基乙酰胺、N,N-二乙基乙酰胺、N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基砜、二甲基亚砜、1,3-二甲基-2-咪唑烷酮和环丁砜组成的组中的至少1种以上。
发明的效果
通过使用本发明的清洗液和清洗方法,半导体电路的制造工序中,可以抑制Low-k膜、钴或钴合金、钨插塞、硬掩模、阻隔金属和阻挡绝缘膜的损伤,选择性地去除被处理物表面的干法蚀刻残渣,可以成品率良好地制造高精度、高品质的半导体元件。
附图说明
图1为干法蚀刻残渣去除前的半导体元件的包含硬掩模且包含钴盖金属(capmetal)的结构的截面简图。
图2为干法蚀刻残渣去除前的半导体元件的钨插塞结构的截面简图。
具体实施方式
本发明中的干法蚀刻残渣的清洗液在制造半导体元件的工序中使用,因此,抑制钴或钴合金、钨插塞、硬掩模、阻隔金属、阻挡绝缘膜和Low-k膜的损伤。
作为本发明中使用的碱金属化合物,可以举出:氢氧化钠、硫酸钠、碳酸钠、碳酸氢钠、硝酸钠、氟化钠、氯化钠、溴化钠、碘化钠、氢氧化钾、硫酸钾、碳酸钾、碳酸氢钾、硝酸钾、氟化钾、氯化钾、溴化钾、碘化钾、氢氧化铯、硫酸铯、碳酸铯、碳酸氢铯、硝酸铯、氟化铯、氯化铯、溴化铯、和碘化铯。这些碱金属化合物可以单独使用或组合2种以上配混。
本发明中使用的碱金属化合物的浓度范围为0.001~20质量%,优选为0.005~15质量%,特别优选为0.01~12质量%。为上述范围内时,可以有效地去除干法蚀刻残渣。另一方面,大于20质量%时,有对Low-k膜造成损伤的担心。
作为本发明中使用的季铵氢氧化物的具体例,可以举出:四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵和四丁基氢氧化铵。这些季铵氢氧化物可以单独使用或组合2种以上配混。
本发明中使用的季铵氢氧化物的浓度范围为0.1~30质量%,优选为0.1~28质量%,更优选为1~25质量%,特别优选为2~23质量%。为上述范围内时,可以有效地去除干法蚀刻残渣。
作为本发明中使用的水溶性有机溶剂的具体例,可以举出:乙醇、1-丙醇、2-丙醇、乙二醇、丙二醇、甘油、二乙二醇、二丙二醇、山梨糖醇、木糖醇、赤藓醇、季戊四醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、三乙二醇、四乙二醇、聚乙二醇、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚、二乙二醇二甲醚、二丙二醇二甲醚、乙二醇单乙酸酯、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、二乙二醇单乙酸酯、甲酰胺、N,N-二甲基甲酰胺、N,N-二乙基甲酰胺、乙酰胺、N,N-二甲基乙酰胺、N,N-二乙基乙酰胺、N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基砜、二甲基亚砜、1,3-二甲基-2-咪唑烷酮和环丁砜。这些水溶性有机溶剂可以单独使用或组合2种以上配混。
本发明中使用的水溶性有机溶剂的浓度范围为0.01~60质量%,优选为0.1~50质量%,特别优选为5~40质量%。为上述范围内时,可以有效地去除干法蚀刻残渣。另一方面,小于0.01质量%时,有时对钴造成损伤,或者化学溶液处理后在钴上产生异物。
本发明中使用的过氧化氢的浓度范围为0.0001~0.1质量%,优选为0.001~0.05质量%,更优选为0.002~0.01质量%,进一步优选上限小于0.01质量%,特别优选上限为0.009质量%以下。小于0.0001质量%时,有时对钴造成损伤。另一方面,大于0.1质量%时,有时对钨和硬掩模造成损伤。
本发明的清洗液从经济性的观点出发优选不含链烷醇胺的方案。
另外,本发明的清洗液优选仅包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001~0.1质量%和水的方案
可以根据期望,以不有损本发明的目的的范围,在本发明的清洗液中配混一直以来半导体用清洗液中使用的添加剂。例如可以添加:具有吡啶骨架、吡唑骨架、嘧啶骨架、咪唑骨架或三唑骨架等的金属防腐蚀剂、或螯合剂、表面活性剂、消泡剂等。
使用本发明的清洗液的温度为10~80℃,优选为20~70℃的范围,可以根据蚀刻的条件、使用的半导体基体而适当选择。
本发明的清洗方法可以根据需要组合使用超声波。
使用本发明的清洗液的时间为0.5~60分钟,优选为1~10分钟的范围,可以根据蚀刻的条件、使用的半导体基体而适当选择。
作为使用本发明的清洗液后的冲洗液,还可以使用醇那样的有机溶剂,但仅以水进行冲洗就是充分的。
本发明中能够应用的半导体元件和显示元件包含:硅、非晶硅、多晶硅、玻璃等基板材料;氧化硅、氮化硅、碳化硅和它们的衍生物等绝缘材料;钴、钴合金、钨、钛-钨等材质;镓-砷、镓-磷、铟-磷、铟-镓-砷、铟-铝-砷等化合物半导体、铬氧化物等氧化物半导体等。
作为一般的Low-k膜,可以使用:羟基倍半硅氧烷(HSQ)系、甲基倍半硅氧烷(MSQ)系的OCD(商品名、东京应化工业株式会社制造)、碳掺杂氧化硅(SiOC)系的Black Diamond(商品名、Applied Materials株式会社制造)、Aurora(商品名、ASM International株式会社制造)、Coral(商品名、Novellus Systems株式会社制造)和无机系的Orion(商品名、Trikon Tencnlogies株式会社制造)。然而,Low-k膜不限定于这些。
作为一般的阻隔金属,可以使用:钽、氮化钽、钛、氮化钛、钌、锰、镁以及它们的氧化物。然而,阻隔金属不限定于这些。
作为一般的阻挡绝缘膜,可以使用:氮化硅、碳化硅、氮化碳化硅等。然而,阻挡绝缘膜不限定于这些。
作为一般的硬掩模,可以使用:硅、钛、铝、钽的氧化物或氮化物或碳化物。这些材料也可以层叠2种以上来使用。然而,硬掩模不限定于这些。
实施例
接着,根据实施例和比较例更具体地说明本发明。但是,本发明不受这些实施例的任何限制。
扫描型电子显微镜(SEM)观察:
使用Hitachi High-Technologies Corporation制造、超高分辨率场发射扫描电子显微镜SU9000,以倍率100000倍、电压2V进行观察。
判定:
I.干法蚀刻残渣的去除状态
E:干法蚀刻残渣被完全去除。
P:干法蚀刻残渣的去除不充分。
将E判定设为合格。
II.钨的损伤
E:与清洗前相比钨未见变化。
G:钨的表面可见稍有粗糙。
P:钨上可见大的孔。
将E和G判定设为合格。
III.钴的损伤
E:与清洗前相比钴未见变化。
G:与清洗前相比钴上可见稍有变化。
P:与清洗前相比钴可见变化。
将E和G判定设为合格。
IV.Low-k膜的损伤
E:与清洗前相比Low-k膜未见变化。
G:Low-k膜稍有凹陷。
P:Low-k膜有较大凹陷。
将E和G判定设为合格。
V.硬掩模的损伤
E:与清洗前相比硬掩模未见变化。
P:硬掩模被剥离或可见形状的变化。
将E判定设为合格。
(实施例1~34)
对于试验,使用具有图1和图2所示那样的布线结构的截面的半导体元件,考察清洗效果。为了去除干法蚀刻残渣1,在表1所示的清洗液中以表2所示的温度、时间浸渍,之后进行利用超纯水的冲洗、利用干燥氮气喷射的干燥。用SEM观察清洗后的半导体元件,从而判断干法蚀刻残渣1(图1和图2)的去除状态以及钨3(图2)、钴4(图1)、Low-k膜2(图1和图2)、硬掩模6(图1)的损伤。需要说明的是,图1所示的半导体元件变为如下构成:以围绕铜等布线材料8的方式通过阻隔金属7覆盖,由钴4加盖。
应用表2所示的本发明的清洗液的实施例1~34中,可知防止钨3、钴4、Low-k膜2和硬掩模6的损伤,且完全去除干法蚀刻残渣1。另外,任意实施例中,阻隔金属7以及阻挡绝缘膜5均未见损伤。
(比较例1)
使用包含四甲基氢氧化铵16.5质量%、甘油30质量%、过氧化氢0.009质量%和水53.491质量%的水溶液(表3、清洗液2A),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。虽然无法去除干法蚀刻残渣1(图1和图2),但防止Low-k膜2(图1和图2)、硬掩模6(图1)、钴4(图1)和钨3(图2)的损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例1的清洗液2A(表4)。
(比较例2)
使用包含氢氧化钾1.5质量%、甘油30质量%、过氧化氢0.009质量%和水68.491质量%的水溶液(表3、清洗液2B),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。虽然无法去除干法蚀刻残渣1(图1和图2),但防止Low-k膜2(图1和图2)、硬掩模6(图1)、钴4(图1)和钨3(图2)的损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例2的清洗液2B(表4)。
(比较例3)
使用包含氢氧化钾1.5质量%、四甲基氢氧化铵16.5质量%、过氧化氢0.009质量%和水81.991质量%的水溶液(表3、清洗液2C),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。可以去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)和钨3(图2)的损伤,但是化学溶液处理后在钴4上可见异物产生。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例3的清洗液2C(表4)。
(比较例4)
使用包含氢氧化钾1.5质量%、四甲基氢氧化铵16.5质量%、甘油30质量%和水52质量%的水溶液(表3、清洗液2D),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。无法去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)和钨3(图2)的损伤,但是钴4(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例4的清洗液2D(表4)。
(比较例5)
使用包含四甲基氢氧化铵10质量%、氢氧化钾0.02质量%、2-苯基-4-甲基咪唑2质量%、二乙二醇单乙醚20质量%和水67.98质量%的水溶液(表3、清洗液2E)(相当于现有技术文献中记载的专利文献1),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。无法去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)和钨3(图2)的损伤,但钴4(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例5的清洗液2E(表4)。
(比较例6)
使用包含氢氧化钾0.2质量%、四甲基氢氧化铵15质量%、甘油30质量%、吡唑0.1质量%和水54.7质量%的水溶液(表3、清洗液2F)(相当于现有技术文献中记载的专利文献2),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。无法去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)和钨3(图2)的损伤,但是钴4(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例6的清洗液2F(表4)。
(比较例7)
使用包含氢氧化钾1.5质量%、四甲基氢氧化铵16.5质量%、甘油30质量%、苯并三唑0.1质量%和水51.9质量%的水溶液(表3、清洗液2G)(相当于现有技术文献中记载的专利文献3),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。无法去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)和钨3(图2)的损伤,但是钴4(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例7的清洗液2G(表4)。
(比较例8)
使用包含氢氧化钾1.5质量%、四甲基氢氧化铵16.5质量%、甘油30质量%、5-氨基-1H-四唑0.1质量%、1-羟基苯并三唑0.1质量%和水51.8质量%的水溶液(表3、清洗液2H)(相当于现有技术文献中记载的专利文献4),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。无法去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)和钨3(图2)的损伤,但是钴4(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例8的清洗液2H(表4)。
(比较例9)
使用包含四甲基氢氧化铵12质量%、过氧化氢5质量%、氢氧化钾2质量%、三乙醇胺35质量%和水46质量%的水溶液(表3、清洗液2I)(相当于现有技术文献中记载的专利文献5),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。虽然可以去除干法蚀刻残渣1(图1和图2),但是Low-k膜2(图1和图2)、硬掩模6(图1)、钨3(图2)和钴4(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例9的清洗液2I(表4)。
(比较例10)
使用包含氢氧化钾2.6质量%、过氧化氢0.9质量%、过碘酸2质量%、乙二胺0.03质量%、二亚乙基三胺0.01质量%、Sufynol 465 0.02质量%、十六烷基三甲基氯化铵0.02质量%、N-甲基吡咯烷酮10质量%和水84.42质量%的水溶液(表3、清洗液2J)(相当于现有技术文献中记载的专利文献6),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。可以去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)和钴4(图1)的损伤,但是钨3(图2)和硬掩模6(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例10的清洗液2J(表4)。
(比较例11)
使用包含氢氧化钾1.5质量%、四甲基氢氧化铵16.5质量%、甘油30质量%、苯并三唑0.12质量%、硫酸铜质量0.0008质量%和水51.879质量%的水溶液(表3、清洗液2K)(相当于现有技术文献中记载的专利文献7),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。可以去除干法蚀刻残渣1(图1和图2)。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)和钨3(图2)的损伤,但是钴4(图1)可见损伤。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例11的清洗液2K(表4)。
(比较例12)
使用包含苯并三唑0.1质量%、1,2,4-三唑0.1质量%、氟化铵5质量%、硼酸1质量%和水84.42质量%的水溶液(表3、清洗液2L)(相当于现有技术文献中记载的专利文献8),清洗图1和图2所示的半导体元件,表4中示出清洗条件和评价结果。虽然防止Low-k膜2(图1和图2)、硬掩模6(图1)、钨3(图2)和钴4(图1)的损伤,但是无法去除干法蚀刻残渣1(图1和图2)。由此可知,本发明的对象即半导体集成电路的制造工序中为了抑制Low-k膜、钴或钴合金、钨、阻隔金属、阻挡绝缘膜和硬掩模的损伤、去除被处理物表面的干法蚀刻残渣,无法使用比较例12的清洗液2L(表4)。
[表1]
KOH:氢氧化钾
K2SO4:硫酸钾
K2CO3:碳酸钾
NaOH:氢氧化钠
Cs2CO3:碳酸铯
TMAH:四甲基氢氧化铵
TEAH:四乙基氢氧化铵
TPAH:四丙基氢氧化铵
TBAH:四丁基氢氧化铵
[表2]
去除状态I:干法蚀刻残渣1的去除状态
损伤II:钨3的损伤
损伤III:钴4的损伤
损伤IV:Low-k膜2的损伤
损伤V:硬掩模6的损伤
[表3]
[表4]
去除状态I:干法蚀刻残渣1的去除状态
损伤II:钨3的损伤
损伤III:钴4的损伤
损伤IV:Low-k膜2的损伤
损伤V:硬掩模6的损伤
产业上的可利用性
通过使用本发明的清洗液和清洗方法,半导体电路的制造工序中,可以抑制Low-k膜、钴或钴合金、钨插塞、硬掩模、阻隔金属和阻挡绝缘膜的损伤,去除被处理物表面的干法蚀刻残渣,可以成品率良好地制造高精度、高品质的半导体元件,产业上是有用的。
附图标记说明
1:干法蚀刻残渣
2:Low-k膜
3:钨插塞
4:钴
5:阻挡绝缘膜
6:硬掩模
7:阻隔金属
8:布线材料(铜)
Claims (8)
1.一种半导体元件的清洗方法,其特征在于,对于半导体元件使用清洗液去除干法蚀刻残渣,
所述半导体元件为在具有低介电常数膜以及钴、钴合金和钨插塞中的至少1种的基板上形成硬掩模图案,接着以该硬掩模图案作为掩模,对硬掩模、低介电常数膜和阻挡绝缘膜实施干法蚀刻处理而得到的,
所述清洗液包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001质量%以上且小于0.01质量%和水,
所述碱金属化合物为选自由氢氧化钠、硫酸钠、碳酸钠、碳酸氢钠、硝酸钠、氟化钠、氯化钠、溴化钠、碘化钠、氢氧化钾、硫酸钾、碳酸钾、碳酸氢钾、硝酸钾、氟化钾、氯化钾、溴化钾、碘化钾、氢氧化铯、硫酸铯、碳酸铯、碳酸氢铯、硝酸铯、氟化铯、氯化铯、溴化铯和碘化铯组成的组中的至少1种。
2.根据权利要求1所述的清洗方法,其中,所述季铵氢氧化物为选自由四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵和四丁基氢氧化铵组成的组中的至少1种。
3.根据权利要求1或2所述的清洗方法,其中,所述水溶性有机溶剂为选自由乙醇、1-丙醇、2-丙醇、乙二醇、丙二醇、甘油、二乙二醇、二丙二醇、山梨糖醇、木糖醇、赤藓醇、季戊四醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、三乙二醇、四乙二醇、聚乙二醇、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚、二乙二醇二甲醚、二丙二醇二甲醚、乙二醇单乙酸酯、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、二乙二醇单乙酸酯、甲酰胺、N,N-二甲基甲酰胺、N,N-二乙基甲酰胺、乙酰胺、N,N-二甲基乙酰胺、N,N-二乙基乙酰胺、N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基砜、二甲基亚砜、1,3-二甲基-2-咪唑烷酮和环丁砜组成的组中的至少1种。
4.一种清洗液,其为用于清洗半导体元件而去除干法蚀刻残渣的清洗液,
所述半导体元件为在具有低介电常数膜以及钴、钴合金和钨插塞中的至少1种的基板上形成硬掩模图案,接着以该硬掩模图案作为掩模,对硬掩模、低介电常数膜和阻挡绝缘膜实施干法蚀刻处理而得到的,
所述清洗液包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001质量%以上且小于0.01质量%和水,
所述碱金属化合物为选自由氢氧化钠、硫酸钠、碳酸钠、碳酸氢钠、硝酸钠、氟化钠、氯化钠、溴化钠、碘化钠、氢氧化钾、硫酸钾、碳酸钾、碳酸氢钾、硝酸钾、氟化钾、氯化钾、溴化钾、碘化钾、氢氧化铯、硫酸铯、碳酸铯、碳酸氢铯、硝酸铯、氟化铯、氯化铯、溴化铯和碘化铯组成的组中的至少1种。
5.根据权利要求4所述的清洗液,其中,所述清洗液不含链烷醇胺。
6.根据权利要求4或5所述的清洗液,其中,所述清洗液仅包含碱金属化合物0.001~20质量%、季铵氢氧化物0.1~30质量%、水溶性有机溶剂0.01~60质量%、过氧化氢0.0001质量%以上且小于0.01质量%和水。
7.根据权利要求4或5所述的清洗液,其中,所述季铵氢氧化物为选自由四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵和四丁基氢氧化铵组成的组中的至少1种。
8.根据权利要求4或5所述的清洗液,其中,所述水溶性有机溶剂为选自由乙醇、1-丙醇、2-丙醇、乙二醇、丙二醇、甘油、二乙二醇、二丙二醇、山梨糖醇、木糖醇、赤藓醇、季戊四醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、三乙二醇、四乙二醇、聚乙二醇、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚、二乙二醇二甲醚、二丙二醇二甲醚、乙二醇单乙酸酯、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、二乙二醇单乙酸酯、甲酰胺、N,N-二甲基甲酰胺、N,N-二乙基甲酰胺、乙酰胺、N,N-二甲基乙酰胺、N,N-二乙基乙酰胺、N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基砜、二甲基亚砜、1,3-二甲基-2-咪唑烷酮和环丁砜组成的组中的至少1种。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9349691B2 (en) * | 2014-07-24 | 2016-05-24 | International Business Machines Corporation | Semiconductor device with reduced via resistance |
KR101799061B1 (ko) * | 2015-12-10 | 2017-12-20 | 주식회사 원익큐엔씨 | 멤브레인 세정액 및 이를 이용한 멤브레인 재생 방법 |
JP6674628B2 (ja) * | 2016-04-26 | 2020-04-01 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
CN108424818A (zh) * | 2017-02-14 | 2018-08-21 | 东友精细化工有限公司 | 掩模清洗液组合物 |
KR101951860B1 (ko) * | 2017-02-14 | 2019-02-26 | 동우 화인켐 주식회사 | 마스크 세정액 조성물 |
KR102469931B1 (ko) * | 2017-03-28 | 2022-11-23 | 동우 화인켐 주식회사 | 마스크 세정액 조성물, 마스크 세정액 예비-조성물, 및 마스크 세정액 조성물의 제조방법 |
US10062560B1 (en) | 2017-04-26 | 2018-08-28 | Globalfoundries Inc. | Method of cleaning semiconductor device |
WO2019156364A1 (ko) * | 2018-02-06 | 2019-08-15 | 동우 화인켐 주식회사 | 마스크 세정액 조성물 |
KR102640138B1 (ko) * | 2018-02-06 | 2024-02-26 | 동우 화인켐 주식회사 | 마스크 세정액 조성물 |
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CN109706007A (zh) * | 2018-12-18 | 2019-05-03 | 珠海顺泽科技股份有限公司 | 一种印刷网板清洗液组合物 |
US11164780B2 (en) | 2019-06-07 | 2021-11-02 | Applied Materials, Inc. | Process integration approach for selective metal via fill |
KR20210005391A (ko) * | 2019-07-04 | 2021-01-14 | 주식회사 이엔에프테크놀로지 | 금속 잔사 제거용 세정제 조성물 및 이를 이용한 반도체 소자의 제조방법 |
CN113770100A (zh) * | 2020-07-15 | 2021-12-10 | 英迪那米(徐州)半导体科技有限公司 | 一种半导体零部件洁净清洗工艺 |
CN112592777B (zh) * | 2020-12-03 | 2021-09-07 | 湖北兴福电子材料有限公司 | 一种3d nand结构片干法蚀刻后的深沟槽清洗液 |
TWI749964B (zh) * | 2020-12-24 | 2021-12-11 | 達興材料股份有限公司 | 鹼性清洗組合物、清洗方法和半導體製造方法 |
CN114798587B (zh) * | 2022-04-07 | 2024-01-30 | 武汉华星光电半导体显示技术有限公司 | 掩膜板异物清除方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102834547A (zh) * | 2010-01-28 | 2012-12-19 | 三菱瓦斯化学株式会社 | 铜/钛系多层薄膜用蚀刻液 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5316573A (en) | 1992-03-12 | 1994-05-31 | International Business Machines Corporation | Corrosion inhibition with CU-BTA |
JP2002016034A (ja) | 2000-06-30 | 2002-01-18 | Mitsubishi Electric Corp | 半導体装置の製造方法、及び半導体装置 |
TWI276682B (en) | 2001-11-16 | 2007-03-21 | Mitsubishi Chem Corp | Substrate surface cleaning liquid mediums and cleaning method |
JP2005347587A (ja) * | 2004-06-04 | 2005-12-15 | Sony Corp | ドライエッチング後の洗浄液組成物および半導体装置の製造方法 |
JP2009075285A (ja) * | 2007-09-20 | 2009-04-09 | Fujifilm Corp | 半導体デバイスの剥離液、及び、剥離方法 |
US20090120457A1 (en) * | 2007-11-09 | 2009-05-14 | Surface Chemistry Discoveries, Inc. | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices |
JP2009231354A (ja) | 2008-03-19 | 2009-10-08 | Fujifilm Corp | 半導体デバイス用洗浄液、および洗浄方法 |
US8080475B2 (en) | 2009-01-23 | 2011-12-20 | Intel Corporation | Removal chemistry for selectively etching metal hard mask |
JP2011091248A (ja) | 2009-10-23 | 2011-05-06 | Hitachi Chem Co Ltd | コバルト用研磨液、及びこの研磨液を用いた基板の研磨方法 |
JP5498768B2 (ja) * | 2009-12-02 | 2014-05-21 | 東京応化工業株式会社 | リソグラフィー用洗浄液及び配線形成方法 |
TWI548738B (zh) | 2010-07-16 | 2016-09-11 | 安堤格里斯公司 | 用於移除蝕刻後殘餘物之水性清潔劑 |
JP2012182158A (ja) | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | 研磨液、及びこの研磨液を用いた基板の研磨方法 |
KR101296281B1 (ko) * | 2011-11-15 | 2013-08-13 | (재)한국나노기술원 | 고품위 질화물 반도체 성장방법 및 이를 이용한 질화물 반도체 발광소자의 제조방법 |
WO2013101907A1 (en) | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
US9587208B2 (en) * | 2012-06-13 | 2017-03-07 | Mitsubishi Gas Chemical Company, Inc. | Cleaning liquid composition, method for cleaning semiconductor element, and method for manufacturing semiconductor element |
KR101827756B1 (ko) * | 2012-12-03 | 2018-02-12 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 반도체소자용 세정액 및 이를 이용한 세정방법 |
JP5835534B1 (ja) * | 2014-04-10 | 2015-12-24 | 三菱瓦斯化学株式会社 | 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法 |
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