CN106058028B - 具有重新分布用于倒装芯片安装的垂直接触件的led - Google Patents

具有重新分布用于倒装芯片安装的垂直接触件的led Download PDF

Info

Publication number
CN106058028B
CN106058028B CN201610671712.5A CN201610671712A CN106058028B CN 106058028 B CN106058028 B CN 106058028B CN 201610671712 A CN201610671712 A CN 201610671712A CN 106058028 B CN106058028 B CN 106058028B
Authority
CN
China
Prior art keywords
led
metal
layer
conducting shell
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610671712.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN106058028A (zh
Inventor
J.雷
K-H.H.肖
Y.魏
S.施亚菲诺
D.A.斯泰格瓦德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds Holding BV
Original Assignee
Lumileds Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds Holding BV filed Critical Lumileds Holding BV
Publication of CN106058028A publication Critical patent/CN106058028A/zh
Application granted granted Critical
Publication of CN106058028B publication Critical patent/CN106058028B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201610671712.5A 2011-03-14 2012-02-28 具有重新分布用于倒装芯片安装的垂直接触件的led Active CN106058028B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161452181P 2011-03-14 2011-03-14
US61/452181 2011-03-14
CN201280013210.3A CN103415935B (zh) 2011-03-14 2012-02-28 具有重新分布用于倒装芯片安装的垂直接触件的led

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201280013210.3A Division CN103415935B (zh) 2011-03-14 2012-02-28 具有重新分布用于倒装芯片安装的垂直接触件的led

Publications (2)

Publication Number Publication Date
CN106058028A CN106058028A (zh) 2016-10-26
CN106058028B true CN106058028B (zh) 2019-03-29

Family

ID=45937460

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610671712.5A Active CN106058028B (zh) 2011-03-14 2012-02-28 具有重新分布用于倒装芯片安装的垂直接触件的led
CN201280013210.3A Active CN103415935B (zh) 2011-03-14 2012-02-28 具有重新分布用于倒装芯片安装的垂直接触件的led

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201280013210.3A Active CN103415935B (zh) 2011-03-14 2012-02-28 具有重新分布用于倒装芯片安装的垂直接触件的led

Country Status (7)

Country Link
US (3) US9246061B2 (https=)
EP (1) EP2686892B1 (https=)
JP (1) JP5932851B2 (https=)
KR (1) KR101933001B1 (https=)
CN (2) CN106058028B (https=)
TW (3) TW201301562A (https=)
WO (1) WO2012123840A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
TWI548124B (zh) * 2013-05-27 2016-09-01 崴發控股有限公司 覆晶式發光二極體元件及其封裝結構
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN110635009B (zh) * 2013-07-18 2023-03-31 亮锐控股有限公司 高度反射倒装芯片led管芯
CN105723529B (zh) * 2013-11-19 2019-03-01 亮锐控股有限公司 固态发光器件和制造固态发光器件的方法
DE112014006625T5 (de) * 2014-04-29 2017-02-09 Enraytek Optoelectronics Co., Ltd. Vertikales LED-Array-Element, das LED epitaktische Strukturen mit einem LED-Paket-Substrat integriert
US9343633B1 (en) 2014-10-31 2016-05-17 Mikro Mesa Technology Co., Ltd. Light-emitting diode lighting device
US9601659B2 (en) * 2015-01-06 2017-03-21 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9865772B2 (en) * 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
WO2016148424A1 (ko) * 2015-03-16 2016-09-22 서울바이오시스 주식회사 금속 벌크를 포함하는 발광 소자
DE102015114587A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
US10898725B2 (en) 2018-11-26 2021-01-26 International Business Machines Corporation Integrated optogenetic device with light-emitting diodes and glass-like carbon electrodes
CN113594321B (zh) * 2021-04-05 2023-12-01 常州纵慧芯光半导体科技有限公司 一种半导体光源及其驱动电路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1909238A (zh) * 2005-08-03 2007-02-07 三星电机株式会社 具有保护元件的发光装置及该发光装置的制造方法
CN101685823A (zh) * 2004-02-20 2010-03-31 奥斯兰姆奥普托半导体有限责任公司 光电组件及其制造方法以及具有多个光电组件的装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
TW492202B (en) 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
CA2492249A1 (en) * 2002-07-22 2004-01-29 Cree, Inc. Light emitting diode including barrier layers and manufacturing methods therefor
TW577184B (en) 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
US7592207B2 (en) * 2003-11-14 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
US20050274970A1 (en) * 2004-06-14 2005-12-15 Lumileds Lighting U.S., Llc Light emitting device with transparent substrate having backside vias
TWI244748B (en) 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
EP1750309A3 (en) 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
US7994514B2 (en) 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
JP2008135694A (ja) * 2006-10-31 2008-06-12 Hitachi Cable Ltd Ｌｅｄモジュール
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
WO2010074287A1 (ja) * 2008-12-28 2010-07-01 有限会社Ｍｔｅｃ 発光ダイオード素子及び発光ダイオードモジュール
TWI414088B (zh) * 2009-12-16 2013-11-01 晶元光電股份有限公司 發光元件及其製造方法
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101685823A (zh) * 2004-02-20 2010-03-31 奥斯兰姆奥普托半导体有限责任公司 光电组件及其制造方法以及具有多个光电组件的装置
CN1909238A (zh) * 2005-08-03 2007-02-07 三星电机株式会社 具有保护元件的发光装置及该发光装置的制造方法

Also Published As

Publication number Publication date
TWI683457B (zh) 2020-01-21
US20130334563A1 (en) 2013-12-19
TWI612696B (zh) 2018-01-21
CN106058028A (zh) 2016-10-26
EP2686892A1 (en) 2014-01-22
TW201301562A (zh) 2013-01-01
WO2012123840A1 (en) 2012-09-20
KR101933001B1 (ko) 2018-12-27
US9722137B2 (en) 2017-08-01
US9246061B2 (en) 2016-01-26
US20160126408A1 (en) 2016-05-05
CN103415935A (zh) 2013-11-27
EP2686892B1 (en) 2019-10-02
KR20140013029A (ko) 2014-02-04
CN103415935B (zh) 2016-09-14
US20180019370A1 (en) 2018-01-18
JP5932851B2 (ja) 2016-06-08
TW201631810A (zh) 2016-09-01
TW201826576A (zh) 2018-07-16
JP2014508426A (ja) 2014-04-03

Similar Documents

Publication Publication Date Title
CN106058028B (zh) 具有重新分布用于倒装芯片安装的垂直接触件的led
US9224932B2 (en) Wafer level photonic device die structure and method of making the same
US7632691B2 (en) Surface mountable chip
US20130146936A1 (en) Light emitting diode chip, light emitting diode package structure, and method for forming the same
CN102637784A (zh) 发光二极管封装基板及其制作方法
CN110021691B (zh) 一种半导体发光器件
JP5628064B2 (ja) 光半導体素子
TWI570881B (zh) 發光二極體晶片及發光裝置
KR100463957B1 (ko) 발광 다이오드 장치를 제조하는 방법
KR101297353B1 (ko) 발광 다이오드
TW201444119A (zh) 無電極遮光的發光二極體及其製作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20180402

Address after: Holland Schiphol

Applicant after: LUMILEDS HOLDING B.V.

Address before: Holland Ian Deho Finn

Applicant before: Koninkl Philips Electronics NV

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant