TW201301562A - 具有再分配用於覆晶安裝的垂直接觸件的發光二極體 - Google Patents

具有再分配用於覆晶安裝的垂直接觸件的發光二極體 Download PDF

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Publication number
TW201301562A
TW201301562A TW101108520A TW101108520A TW201301562A TW 201301562 A TW201301562 A TW 201301562A TW 101108520 A TW101108520 A TW 101108520A TW 101108520 A TW101108520 A TW 101108520A TW 201301562 A TW201301562 A TW 201301562A
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TW
Taiwan
Prior art keywords
layer
conductive layer
metal
dielectric
led
Prior art date
Application number
TW101108520A
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English (en)
Chinese (zh)
Inventor
雷吉普
廣興 亨利 蔡
魏亞軍
史帝法諾 史恰非諾
丹尼爾 亞歷山卓 史帝格沃
Original Assignee
皇家飛利浦電子股份有限公司
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Application filed by 皇家飛利浦電子股份有限公司 filed Critical 皇家飛利浦電子股份有限公司
Publication of TW201301562A publication Critical patent/TW201301562A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW101108520A 2011-03-14 2012-03-13 具有再分配用於覆晶安裝的垂直接觸件的發光二極體 TW201301562A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161452181P 2011-03-14 2011-03-14

Publications (1)

Publication Number Publication Date
TW201301562A true TW201301562A (zh) 2013-01-01

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW101108520A TW201301562A (zh) 2011-03-14 2012-03-13 具有再分配用於覆晶安裝的垂直接觸件的發光二極體
TW105114215A TWI612696B (zh) 2011-03-14 2012-03-13 發光二極體（ｌｅｄ）結構及形成覆晶ｌｅｄ結構之方法
TW106136319A TWI683457B (zh) 2011-03-14 2012-03-13 發光二極體(led)結構及形成覆晶led結構之方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW105114215A TWI612696B (zh) 2011-03-14 2012-03-13 發光二極體（ｌｅｄ）結構及形成覆晶ｌｅｄ結構之方法
TW106136319A TWI683457B (zh) 2011-03-14 2012-03-13 發光二極體(led)結構及形成覆晶led結構之方法

Country Status (7)

Country Link
US (3) US9246061B2 (https=)
EP (1) EP2686892B1 (https=)
JP (1) JP5932851B2 (https=)
KR (1) KR101933001B1 (https=)
CN (2) CN106058028B (https=)
TW (3) TW201301562A (https=)
WO (1) WO2012123840A1 (https=)

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TWI548124B (zh) * 2013-05-27 2016-09-01 崴發控股有限公司 覆晶式發光二極體元件及其封裝結構
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN110635009B (zh) * 2013-07-18 2023-03-31 亮锐控股有限公司 高度反射倒装芯片led管芯
CN105723529B (zh) * 2013-11-19 2019-03-01 亮锐控股有限公司 固态发光器件和制造固态发光器件的方法
DE112014006625T5 (de) * 2014-04-29 2017-02-09 Enraytek Optoelectronics Co., Ltd. Vertikales LED-Array-Element, das LED epitaktische Strukturen mit einem LED-Paket-Substrat integriert
US9343633B1 (en) 2014-10-31 2016-05-17 Mikro Mesa Technology Co., Ltd. Light-emitting diode lighting device
US9601659B2 (en) * 2015-01-06 2017-03-21 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9865772B2 (en) * 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
WO2016148424A1 (ko) * 2015-03-16 2016-09-22 서울바이오시스 주식회사 금속 벌크를 포함하는 발광 소자
DE102015114587A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
US10898725B2 (en) 2018-11-26 2021-01-26 International Business Machines Corporation Integrated optogenetic device with light-emitting diodes and glass-like carbon electrodes
CN113594321B (zh) * 2021-04-05 2023-12-01 常州纵慧芯光半导体科技有限公司 一种半导体光源及其驱动电路

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Also Published As

Publication number Publication date
TWI683457B (zh) 2020-01-21
US20130334563A1 (en) 2013-12-19
TWI612696B (zh) 2018-01-21
CN106058028A (zh) 2016-10-26
EP2686892A1 (en) 2014-01-22
WO2012123840A1 (en) 2012-09-20
KR101933001B1 (ko) 2018-12-27
US9722137B2 (en) 2017-08-01
US9246061B2 (en) 2016-01-26
US20160126408A1 (en) 2016-05-05
CN103415935A (zh) 2013-11-27
CN106058028B (zh) 2019-03-29
EP2686892B1 (en) 2019-10-02
KR20140013029A (ko) 2014-02-04
CN103415935B (zh) 2016-09-14
US20180019370A1 (en) 2018-01-18
JP5932851B2 (ja) 2016-06-08
TW201631810A (zh) 2016-09-01
TW201826576A (zh) 2018-07-16
JP2014508426A (ja) 2014-04-03

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