CN106024862B - 一种带有电极的金刚石薄膜/GaN异质结的制备方法 - Google Patents
一种带有电极的金刚石薄膜/GaN异质结的制备方法 Download PDFInfo
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Abstract
本发明涉及一种带有电极的金刚石薄膜/GaN异质结的制备方法。属于半导体器件材料制造工艺技术领域。本发明是在n型GaN衬底上采用微波等离子体化学气相沉积(MPCVD)法制备一层p型纳米金刚石(p‑NCD)薄膜，从而制备出一个p‑NCD/n‑GaN的异质结结构器件。本发明的目的是提供一种低成本、高质量的p‑NCD/n‑GaN异质结制备方法。其特点在于，采用微波等离子体化学气相沉积(MPCVD)法首次在n型GaN上制备了p型纳米金刚石薄膜(p‑NCD)形成异质结。所得到的器件具有制备方法简单，成本小，很好的整流特性，适用于高频电子器件，等优点。
Description
技术领域
本发明涉及一种带有电极的金刚石薄膜/GaN异质结的制备方法。属于半导体材料制造工艺技术领域。
背景技术
自20世纪50年代以来，以Si为代表的第一代半导体材料制造的各种电子器件，导致了以集成电路为核心的微电子工业快速的崛起和发展，促进了整个IT产业的腾飞，改善了人类的生活质量。为了满足高频、高增益、低噪声的需要，以GaAs和InP为代表的第二代化合物半导体材料制造的电子器件应运而生，由于它们属于直接带隙半导体材料，非常适合于制备发光二极管(LED)和半导体激光器(LD)。随着时代的发展和科技的不断进步，第一代半导体材料Si、Ge和第二代半导体材料GaAs、InP等已不能完全满足人们生产和生活需要，宽禁带(Eg>2.3eV)半导体材料，包括III族氮化物、ZnO、SiC等第三代半导体材料日益引起人们的重视。其中GaN基半导体材料是最为重要的一类宽禁带直接带隙半导体材料，GaN材料由于具有高电子漂移饱和速度、禁带宽度大、导电性能良好、化学稳定性高等优点，已经在照明、导弹、雷达、通信、航空航天等领域得到了广泛的应用，同时由于其具有抗福射、耐高温等特点而使其更具有极大的发展空间和市场前景。
金刚石具有优异的综合性能，在机械性能方面，它是世界上最坚硬的天然物质；在理化性能上，金刚石还具有优异的电学、热学、声学和光学等性能，因此在当今的高技术领域有着非常广阔的应用前景。但是由于天然金刚石储量稀少，高质量的金刚石价格又极其昂贵，更为重要的是天然金刚石的尺寸都不大，这在很大程度上限制了金刚石在高科技领域的应用，因此人工合成技术一直是人们致力发展的获得金刚石的方法。金刚石具有宽禁带、高载流子迁移率、低介电常数和高击穿电压的特性。金刚石的带隙高达5.5eV，具有106～1012Ω·cm的电阻率，和高达10MV/cm的介电强度，且介电常数很低，是理想的半导体材料。
在GaN基器件的第三代半导体被广泛应用的今天，器件的工作频率越来越高，且在器件工作的过程中，产生的热量也越来越多，金刚石薄膜与GaN构成的异质结器件非常适合用于高温高功率的条件，首先，GaN基器件工作在高频条件下具有其自身独特的优势，其次来说，金刚石薄膜具有很高的热导率，该复合结构可以有效的解决器件工作的热管理问题。
本发明采用微波等离子体化学气相沉积(MPCVD)法首次在n型GaN上制备了p型纳米金刚石(p-type Nano-crystalline diamond,p-NCD)薄膜形成异质结。MPCVD法制备得到的金刚石薄膜，具有纯度高，生长速率快，晶粒尺寸可控等优点，这有利于降低成本，以及后期器件的制作。
发明内容
本发明是在n-GaN衬底上生长一层p型纳米金刚石薄膜，制备p-NCD/n-GaN异质结。
本发明的目的是提供一种低成本、高质量的p-NCD/n-GaN异质结制备方法，为达到上述目的，本发明纳米晶金刚石/GaN异质结的制备采用如下技术方案及步骤:
a.n-GaN衬底的清洗
在纳米金刚石薄膜制备中，采用(111)择优取向的n-GaN作为沉积金刚石的衬底；在丙酮中超声清洗5-10分钟，用来去除表面的杂质，在用乙醇超声清洗5-10分钟，去除上一步清洗过程中残留的丙酮，最后在重复上述步骤清洗一遍，然后用乙醇冲洗一遍，用氮气枪吹干待用；
b.n-GaN衬底的预处理
为了增加金刚石薄膜的成核密度，使用1-100nm粒径的金刚石微粉溶液并利用匀胶机对衬底进行旋涂预处理；在6000转/分的转速下，对衬底滴7滴金刚石微粉溶液；处理结束后将衬底放入MPCVD装置的反应室内；
c.用微波等离子体化学气相沉积法制备纳米金刚石薄膜
用真空泵对MPCVD反应室抽真空至1.4×10-2Torr，逐步增加反应室压力，氢气流速和微波功率直到反应室压力为45Torr；氢气流速450SCCM，微波功率3.0KW；在温度大于700℃的时候开通甲烷并逐步增加其流速到40SCCM；衬底温度控制在750-1050℃，生长时间为3小时，同时在生长的过程中通入10SCCM硼烷气体，用来在纳米金刚石薄膜制备的过程中形成替位式杂质硼，使在n-GaN衬底上直接沉积得到硼掺杂的p型纳米金刚石薄膜；
d.利用电子束蒸发法在样品上制备电极；
在金刚石薄膜上采用的是Ti/Pt/Au三层复合电极，在GaN上采用的是Ti/Al/Au三层复合电极；该复合电极通过电子束蒸发法沉积的；该设备沉积电极需要在高真空的环境下，反应前将反应室的真空度抽到10-7Pa数量级以下；在使用电子束蒸发的机器将复合电极的材料依次蒸发到样品上，最后采用快速退火工艺对电极进行退火，退火温度为350-500℃，退火时间为20-45分钟，最后制得带有电极的纳米金刚石薄膜/GaN异质结。
利用本方法制备出来的p-NCD/n-GaN异质结，具有很好的整流特性，该异质结的开启电压为1.1V，在±2V时，正向电流/反向电流大于103。
本发明的优点在于：
(1)本发明使用的为p-NCD/n-GaN的双层结构，器件的制备方法简单，成本小，具有很好的整流特性。
(2)GaN和NCD薄膜本身都是优良的半导体材料，适用于高频电子器件，在未来的半导体应用方面具有无可比拟的优势。
附图说明
图1是本发明的p-NCD/n-GaN异质结器件结构图。
图2是本发明的p-NCD/n-GaN异质结I-V特性曲线图。
具体实施方式
下面给出本发明的较佳实施例，使能更好地理解本发明的过程。
实施例
本实施例中制备过程和步骤如下所述
1.纳米金刚石薄膜的制备
采用(111)择优取向的n-GaN作为沉积金刚石的衬底；在丙酮中超声清洗8分钟，用来去除表面的杂质，在用乙醇超声清洗8分钟，去除上一步清洗过程中残留的丙酮，最后在重复上述步骤清洗一遍，然后用乙醇冲洗一遍，用氮气枪吹干待用；为了增加金刚石薄膜的成核密度，使用平均为10nm粒径的金刚石微粉溶液并利用匀胶机对衬底进行旋涂预处理；在6000转/分的转速下共滴7滴金刚石微粉溶液；处理结束后将衬底放入MPCVD装置的反应室内；
用真空泵对MPCVD反应室抽真空至1.4×10-2Torr，逐步增加反应室压力，氢气流速和微波功率直到设定值，在温度大于700℃的时候开通甲烷并逐步增加其流速到设定值，衬底温度控制在850℃，微波功率为3KW，生长时间为3小时；在生长的过程中通入10SCCM硼烷气体，使在n-GaN衬底上直接沉积得到硼掺杂的金刚石薄膜。
2.然后利用电子束蒸发法在样品上制备电极；
在金刚石薄膜上采用的是Ti/Pt/Au三层复合电极，在GaN上采用的是Ti/Al/Au三层复合电极；该复合电极通过电子束蒸发法沉积的；该设备沉积电极需要在高真空的环境下，反应前将反应室的真空度抽到10-7Pa数量级以下；在使用电子束蒸发的机器将复合电极的材料依次蒸发到样品上；最后采用快速退火工艺对电极进行退火，退火温度为400℃，退火时间为30分钟；最后制得纳米金刚石薄膜/GaN异质结。
3.有关本发明附图的解释说明
图1为本发明所制备的p-NCD/n-GaN的器件结构图，该图给出了p-NCD/n-GaN异质结器件结构以及每一层所对应的电极，以及电极结构。
图2为所制备的p-NCD/n-GaN异质结的I-V特性曲线图，在该图中我们可以看见很好的整流特性，该异质结的开启电压为1.1V，且在所测试的电压区间内，没有明显的反向漏电流的存在。
Claims (1)
1.一种带有电极的金刚石薄膜/GaN异质结的制备方法,其特征在于具有以下制备过程和步骤：
a.n-GaN衬底的清洗
在纳米金刚石薄膜制备中，采用(111)择优取向的n-GaN作为沉积金刚石的衬底；
在丙酮中超声清洗5-10分钟，用来去除表面的杂质，在用乙醇超声清洗5-10分钟，去除上一步清洗过程中残留的丙酮，最后在重复上述步骤清洗一遍，然后用乙醇冲洗一遍，用氮气枪吹干待用；
b.n-GaN衬底的预处理
为了增加金刚石薄膜的成核密度，使用1-100nm粒径的金刚石微粉溶液并利用匀胶机对衬底进行旋涂预处理；在6000转/分的转速下，对衬底滴7滴金刚石微粉溶液；处理结束后将衬底放入MPCVD装置的反应室内；
c.用微波等离子体化学气相沉积法制备纳米金刚石薄膜
用真空泵对MPCVD反应室抽真空至1.4×10-2Torr，逐步增加反应室压力，氢气流速和微波功率直到反应室压力为45Torr；氢气流速450SCCM(Standard Cubic Centimeter perMinute，标准cm3/分钟)，微波功率3.0KW；在温度大于700℃的时候开通甲烷并逐步增加其流速到40SCCM；衬底温度控制在750-1050℃，生长时间为3小时；同时在生长的过程中通入10SCCM硼烷气体，用来在纳米金刚石薄膜制备的过程中形成替位式杂质硼，使在n-GaN衬底上直接沉积得到硼掺杂的p型纳米金刚石(p-type Nano-crystalline diamond,p-NCD)薄膜；
d.然后利用电子束蒸发法在样品上制备电极；
在金刚石薄膜上采用的是Ti/Pt/Au三层复合电极，在GaN上采用的是Ti/Al/Au三层复合电极；该复合电极通过电子束蒸发法沉积的；设备沉积电极需要在高真空的环境下，反应前将反应室的真空度抽到10-7Pa数量级以下；在使用电子束蒸发的机器将复合电极的材料依次蒸发到样品上，最后采用快速退火工艺对电极进行退火，退火温度为350-500℃，退火时间为20-45分钟，最后制得带有电极的纳米金刚石薄膜/GaN异质结。
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