CN106024728A - 具有单个金属法兰的多腔封装件 - Google Patents

具有单个金属法兰的多腔封装件 Download PDF

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CN106024728A
CN106024728A CN201610190845.0A CN201610190845A CN106024728A CN 106024728 A CN106024728 A CN 106024728A CN 201610190845 A CN201610190845 A CN 201610190845A CN 106024728 A CN106024728 A CN 106024728A
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tube core
circuit
semiconductor element
circuit board
packaging part
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CN106024728B (zh
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S·格尔
A·科姆波施
C·布莱尔
C·格兹
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Wofu Semiconductor Co ltd
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Infineon Technologies AG
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Abstract

本申请涉及具有单个金属法兰的多腔封装件。其中，一种多腔封装件包括：单个金属法兰，具有相对的第一主面和第二主面；电路板，附接至单个金属法兰的第一主面，电路板具有露出单个金属法兰的第一主面的不同区域的多个开口；以及多个半导体管芯，每一个都被设置在电路板的一个开口中并且附接至单个金属法兰的第一主面。电路板包括用于电互连半导体管芯以形成电路的多个金属迹线。还提供了对应的制造方法。

Description

具有单个金属法兰的多腔封装件
技术领域
本申请涉及功率半导体封装件，具体地，涉及具有多个半导体管芯的功率半导体封装件。
背景技术
在高度空间约束系统中，通常使用集成电路(IC)技术来实施多级功率放大器设计，集成电路技术具有多种限制而使其使用在许多情况下不具有吸引力。例如，制造IC的设计时间和工艺流程非常长，这又增加了总体的产品周转时间。此外，对利用IC技术的芯片(管芯)设置不同放大器级之间的级间匹配，并且由于接合线的邻近和所得到的耦合机制，IC具有非常大的不稳定且由此不可用的趋势。此外，IC处理涉及昂贵的半导体制造工艺，这增加了制造这种产品的设计和开发成本。此外，传统的多级电源放大器IC设计最多提供大约30dB的增益。任何更高的增益都增加了电源放大器IC不稳定的风险，由此使得IC不可用。
发明内容
根据多腔封装件的实施例，多腔封装件包括：单个金属法兰，具有相对的第一和第二主面；电路板，附接至单个金属法兰的第一主面，电路板具有露出单个金属法兰的第一主面的不同区域的多个开口；以及多个半导体管芯，每个均被设置在电路板的一个开口中并且附接至单个金属法兰的第一主面。电路板包括多条金属迹线，用于电互连半导体管芯以形成电路。
根据制造多腔封装件的方法的实施例，该方法包括：提供具有相对的第一和第二主面的单个金属法兰；将电路板附接至单个金属法兰的第一主面，电路板具有露出单个金属法兰的第一主面的不同区域的多个开口；将多个半导体管芯放置在电路板的开口中；将半导体管芯附接至单个金属法兰的第一主面；以及通过电路板的多条金属迹线电互连半导体管芯以形成电路。
本领域技术人员在阅读以下详细描述并根据附图可以意识到附加的特征和优势。
附图说明
附图的原件不需要相对按比例绘制。类似的参考标号表示对应的类似部件。可以组合各个所示实施例的特征，除非它们相互排除。下面在附图中示出并在说明书中详细说明实施例。
图1示出了多腔封装件的实施例的顶视立体图。
图2示出了多腔封装件的另一实施例的顶视立体图。
图3示出了多腔封装件的又一实施例的顶视立体图。
图4A至图4D示出了制造多腔封装件的方法的实施例。
图5示出了用于多腔封装件的单个金属法兰和电路板结构的实施例的侧视图。
具体实施方式
以下描述设置在单个金属法兰上的多级电源放大器电路的实施例。使用用于实施级间匹配的诸如PCB(印刷电路板)的电路板技术或者诸如电感器、电容器、电阻器等的部件，最终的RF电源晶体管管芯(芯片)的输入与驱动器RF电源晶体管管芯的输出相匹配。单个金属法兰可以具有附接至法兰的两个或更多个电源放大器级。这种结构能够以更小的面积实现更大的增益(例如，大于35dB增益)(针对两级)，同时减少了放大器不稳定的问题。对于更多数量的级，所提供的增益可以在45dB左右，甚至更高。
本文描述的实施例能够制造具有附接至单个金属法兰的主和峰值放大器管芯的封装多尔蒂放大器电路器件以及位于封装件的输出侧的多尔蒂组合器。这种结构节省空间，并降低了用户基站设计的设计复杂度。这种设计也可以应用于发射器的其他应用。
在每一种情况下，本文描述的多级封装设计实施例能够使用多腔封装件实现大增益器件，其中介电质由PCB或类似介电材料(诸如特氟龙、陶瓷、LTCC、聚酰亚胺等)组成，并且通过在封装级集成RF放大器功能(诸如用于多尔蒂放大器设计的输出匹配、输入匹配、驱动器+输入+输出匹配等)来简化用户设计。本文描述的多级电源放大器封装件的导线/端子可以被焊接在应用板上而不要求用于信号路径的附加连接件。单个金属法兰可以根据应用制造实践来焊接或拧紧。多级电源放大器封装件是开放腔封装件设计，并且可以设置盖来保护互连件和电路部件。
图1示出了多腔封装件100的实施例的顶视立体图。多腔封装件100包括具有相对的第一和第二主面104、106的单个金属法兰102、以及附接至单个金属法兰102的第一主面104的电路板108(诸如PCB)。单个金属法兰102可以包括Cu、CPC(铜、铜-钼、铜层压结构)CuW或者任何类似的合金等。
电路板108可以通过标准的电路板附接工艺(诸如胶接、焊接、烧结、铜焊等)附接至单个金属法兰102的第一主面104。电路板108机械地支持并且使用导线(也称为迹线)、焊盘和从层压在非导电衬底110上的金属(例如，铜)片蚀刻得到的其他部件来电连接电部件。电路板108可以是单侧(一个金属层)、双侧(两个金属层)或者多层。不同层上的导体与称为通孔的镀穿孔连接。电路板108可以包含嵌入在非导电衬底110中的诸如电容器、电阻器、有源器件等的部件。电路板108还可以具有多个开口112，它们露出单个金属法兰102的第一主面104的不同区域114、116、118。
多腔封装件100还包括多个半导体管芯120-142，每个均被设置在电路板108的一个开口112中并且经由诸如焊料的管芯附接材料(未示出)、扩散焊接、烧结、粘合等附接至单个金属法兰102的第一主面104。例如，半导体管芯120-142可以使用软焊料、共熔管芯附接材料(诸如AuSi或AuSn)、有机粘合剂等附接至单个金属法兰102。电路板108的金属迹线144、146、148电互连半导体管芯120-142和外部电端子以形成电路。例如，接合线150可以将对应的金属迹线144、146、148电连接至半导体管芯120-142的不同端子以形成期望的电路。
半导体管芯120-142中的一些或所有可以是有源半导体管芯(诸如功率晶体管管芯、功率二极管管芯等)，和/或包含无源部件(诸如电容器、电感器和电阻器)。每个有源半导体管芯124、132、140都可以是横向或垂直器件或者是用于放大的晶体管的一些其他形式。
在垂直器件的情况下，电流流动方向在管芯的底侧和顶侧之间。晶体管管芯可以具有三个端子。例如，管芯的底侧可以是功率端子，诸如功率MOSFET(金属氧化物半导体场效应晶体管)的源极或者IGBT(绝缘栅型双极晶体管)的集电极或者功率二极管的阳极/阴极。功率端子例如通过扩散焊接附接至单个金属法兰102的区域114/116/118(其通过电路板108中的对应开口112露出)。在晶体管管芯的情况下的栅极和漏极/发射极端子或者在功率二极管管芯的情况下的阴极/阳极端子被设置在管芯的相对侧上，即背向单个金属法兰102的侧面。
在横向器件的情况下，电流流动方向是水平的，并且管芯的底侧不是有源的。这些器件的对应漏极或集电极端子同样在顶侧具有互连件。然后，电路板108仍然连接位于半导体管芯的顶部上的漏极和栅极端子或等效控制端。半导体管芯120-142的顶侧端子可以附接至相邻管芯的侧面端子或者例如通过接合线150附接至电路板金属迹线144、146、148中的一条。
在电路板108中形成的开口112中设置的一个或多个半导体管芯120-142可以是缺少有源器件的无源半导体管芯(诸如电容器、电阻器或电感器管芯)。在电容器管芯120、122、126、128、130、134、136、138、142的情况下，一个电容器端子位于电容器管芯的底侧并且附接至单个金属法兰102。其他电容器端子被设置在电容器管芯的相对侧，即背向单个金属法兰102的侧面。
多腔封装件100可以利用任选的盖来密封，使得封装件是开放腔封装件。多腔封装件100允许通过在电路板108中使用多个开口(开孔)112来简化生产和研发工艺，使得电路板108提供开口112，无源和/或有源部件通过开口附接至单个金属法兰102。例如，在电路板108中具有两个开口112的情况下，电路板108向管芯提供将有源/无源部件附接至单个金属法兰102的两个腔。如此，通过在一个电路板开口112中设置驱动级管芯并在另一开口112中设置最终极管芯，可以在相同的金属法兰102上设置两级大增益放大器器件。对于这种两级放大器设计来说，代替使用诸如硅的半导体技术开发级间匹配，本文描述的多腔封装件100能够使用由电路板金属迹线144、146、148以及安装在腔中或板上的无源部件形成的传输线来实现级间匹配设计，这使得显著减少了研发时间。设计基于电路板的级间匹配拓扑降低了总体的产品研发工艺的成本，因为不需要昂贵的硅处理。此外，多腔封装件100通过在电路板108中具有更多的腔/开口112而允许针对不同应用的定制解决方案。例如，移相器和/或衰减器可以由电路板金属迹线144、148、148中的一个或多个来形成。这种实施方式能够实现双路径独立控制的驱动器和多尔蒂电源放大器器件。
根据图1所示的多腔封装件实施例，一个半导体管芯124是多尔蒂放大器电路的驱动器级管芯，第二个半导体管芯132是多尔蒂放大器电路的主(或载体)放大器管芯，以及第三个半导体管芯140是多尔蒂放大器电路的峰值放大器管芯。如图1所示，形成多尔蒂放大器电路的各个匹配网络(诸如输入和输出匹配网络)的部分的无源半导体管芯120、122、126、128、130、134、136、138、142也可以被放置在电路板开口112中并且附接至单个金属法兰102。
一个电路板金属迹线146形成驱动器级管芯124的输出与主放大器管芯132的输入和峰值放大器管芯140的输入之间的级间匹配。第二个电路板金属迹线148形成电连接至主放大器管芯132的输出和峰值放大器管芯140的输出的多尔蒂组合器。第三个电路板金属迹线144将外部端子电连接至驱动器级管芯124的输入。第三金属迹线144可以在驱动器级管芯124的输入处被成形为形成移相器、衰减器等。如此，图1所示的多腔封装件100在单个金属法兰102上具有主器件和峰值器件(利用地屏蔽分离来用于更好的隔离)以及位于封装件上的多尔蒂组合器148。
多尔蒂放大器132、140的两个信号输出的相位相差90度。多尔蒂组合器148可以包括连接至峰值放大器140的输出的λ/4(四分之一波长)传输线152。如此，多尔蒂放大器输出重新入相并反应性地组合。此时，并行的两个信号创建Z0/2阻抗，其中Z0对应于负载阻抗。多尔蒂组合器148可以进一步包括用于将阻抗步进至Z0的λ/4(四分之一波长)变压器154。在50欧姆系统中，变压器154可以为35.35欧姆。多尔蒂组合器148可以实施为电路板上的印刷传输线。变压器154根据端子160处所需的阻抗可以为其他阻抗。
通过在电路板108上实施多尔蒂组合器，减小了封装件寄生对放大器性能的影响。此外，多腔封装件100与主系统板之间的界面相关损失被减小到与大体积生产环境不一致，同时保证不产生低产量影响。如此，可以减小总体的电路板尺寸并且简化了总体的放大器设计。
电路板108可具有至少一个横向延伸部156、158，它们悬在单个金属法兰102之上以形成用于将多腔封装件100附接至另一结构(诸如另一PCB、金属法兰等)的接口。根据图1所示的实施例，电路板108具有相对的第一和第二横向延伸部156、158，每个均悬在单个金属法兰102之上以形成用于将多腔封装件100附接至位于多腔封装件100的相对端的一个或多个结构的两个相对接口。电路板108的输出金属迹线148可以在多腔封装件100的输出侧处在横向延伸部158上延伸，和/或电路板108的输入金属迹线144可以在多腔封装件100的输入侧处在横向延伸部156上延伸。输出金属迹线148提供用于多尔蒂放大器电路的输出电路径，并且输入金属迹线144提供用于电路的输入电路径。在一个横向延伸部156、158上延伸的每条迹线144、148均可以具有多个称为通孔160的镀穿孔，其延伸穿过对应的横向延伸部156、158。通孔160提供针对主系统板(未示出)的连接的输入/输出点。例如，主系统板可以焊接至多腔封装件100的对应通孔160。还可以通过焊接迹线或使用单个(大)填充通孔来提供连接。
图2示出了多腔封装件200的另一实施例的顶视立体图。图2所示的多腔封装件实施例类似于图1所示的实施例。然而，不同在于，第一个半导体管芯是功率放大器电路的驱动器级管芯202，并且第二个半导体管芯是功率放大器电路的功率或最终极管芯204。电路板108的一个金属迹线206形成驱动器级管芯220的输出与功率级管芯204的输入之间的级间匹配。第二个电路板金属迹线208电连接至功率级管芯204的输出，并且第三个电路板金属迹线210电连接至驱动器级管芯202的输入。在RF功率放大器电路的情况下，第二金属迹线208可以以天线的形式来成形，其传输功率级管芯204输出的RF信号。在电路板108中形成的开口112中设置的一个或多个半导体管芯可以是形成功率放大器电路的部分的如前所述的无源半导体管芯212、214、216、218(诸如电容器管芯)。
图3示出了多腔封装件300的又一实施例的顶视立体图。图3所示的多腔封装件实施例类似于图2所示的实施例。然而，不同在于，至少一个半导体管芯具有表面安装结构，这些管芯可以直接安装或放置在电路板108的金属迹线206、208、210、220、222、224、226上。例如，组成电路的至少一些无源部件(诸如电容器管芯212、214、216、218)可以直接表面安装在电路板108的金属迹线206、208、210、220、222、224、226上而非单个金属法兰102上。
图4A至图4D示出了制造多腔封装件的方法的实施例。
在图4A中，设置单个金属法兰400，其具有相对的第一和第二主面402、404。单个金属法兰400可以包括Cu、CPC(铜、铜-钼、铜层压结构)CuW或者任何其他适当的合金等。
在图4B中，诸如PCB的电路板406例如通过胶接、焊接、烧结、铜焊等附接至单个金属法兰404的第一主面402。电路板406具有多个开口(开孔)408，它们露出单个金属法兰400的第一主面402的不同区域410、412。电路板406还具有从层压在非导电衬底420上的金属(例如，铜)片蚀刻而来的导电迹线(轨迹)414、416、418。电路板406还可以具有至少一个横向延伸部422、424，其悬在单个金属法兰400之上以形成附接接口。电路板406的输入和/或输出金属迹线414、418可以在对应的横向延伸部422、424上延伸，并且均可以具有多个镀穿孔(通孔)426或单个(大)通孔，其延伸穿过对应的横向延伸部422、424以提供如前所述的针对主系统板(未示出)的连接的输入/输出点。可选地或附加地，可以通过将横向延伸部422、424直接焊接至主系统板来提供连接。
在图4C中，多个半导体管芯428-438被放置在电路板406的开口408中。如前所述，半导体管芯428-438中的一些或所有是垂直和/或横向有源半导体管芯(诸如功率晶体管管芯、功率二极管管芯等)，并且剩余的管芯是无源管芯(诸如电容器管芯)。
在图4D中，半导体管芯428-438经由管芯附接材料(诸如焊料)、扩散焊接、烧结、粘合等附接至单个金属法兰400的第一主面402。此外，半导体管芯428-438通过电路板的金属迹线414、416、418以及接合线440或者其他类型的电导体而电互连以形成诸如多尔蒂放大器电路、功率放大器电路等的电路。
图5示出了用于多腔封装件的单个金属法兰和电路板结构的实施例的侧视图。为了易于说明，在图5中省略了通常被设置为封装件的一部分的半导体管芯和接合线连接。类似于本文前面描述的多腔封装件实施例，电路板500附接至单个金属法兰502。电路板500具有至少一个横向延伸部504、506，其悬在单个金属法兰502的对应边缘面508、510之上以形成用于封装件的附接接口。电路板500具有在对应的横向延伸部504、506上延伸的输入和/或输出金属迹线512、514。输入和/或输出金属迹线512、514进一步在对应的边缘面516、518上延伸并且可选地在对应横向延伸部504、506的对应底面502、522上延伸以提供针对主系统板(未示出)的连接的输入/输出点。例如，电路板500的每个横向延伸部504、506都可以沿着边缘面516/518以及可选地沿着对应输入/输出金属迹线512、514的底面520/522焊接至主系统板。
诸如“下方”、“之下”、“下部”、“之上”、“上部”等的空间相对术语用于描述的方便以说明一个元件相对于第二元件的定位。除与附图所示不同的定向之外，这些术语用于包括不同的器件定向。此外，诸如“第一”、“第二”等的术语也用于描述各个元件、区域、部分等并且也不用于限制。类似的术语在说明书中表示类似的元件。
如本文所使用的，术语“具有”、“包含”、“包括”等是开放性术语，其表示所提元件或特征的存在，但是不排除附加元件或特征。冠词“一个”和“该”用于包括多个和单个，除非另有明确指定。
应该理解，本文描述的各个实施例的特征可以相互组合，除非另有明确指定。
尽管本文示出和描述了特定实施例，但本领域技术人员应该理解，在不背离本发明的范围的情况下，可以针对所示和所述的具体实施例替换各种修改和/或等效实施。本申请用于覆盖本文所讨论的具体实施例的任何修改或变化。因此，仅通过权利要求及其等效物来限定本发明。

Claims (20)

1.一种多腔封装件，包括：
单个金属法兰，具有相对的第一主面和第二主面；
电路板，附接至所述单个金属法兰的所述第一主面，所述电路板具有露出所述单个金属法兰的所述第一主面的不同区域的多个开口；以及
多个半导体管芯，每个半导体管芯均被设置在所述电路板的一个所述开口中并且附接至所述单个金属法兰的所述第一主面，
其中所述电路板包括用于电互连所述半导体管芯以形成电路的多个金属迹线。
2.根据权利要求1所述的多腔封装件，其中至少一个所述半导体管芯是晶体管管芯，所述晶体管管芯具有第一端子以及第二端子和第三端子，所述第一端子穿过布置有所述半导体管芯的所述电路板中的所述开口附接至所述单个金属法兰，所述第二端子和所述第三端子位于垂直晶体管管芯的与所述第一端子相对的侧面。
3.根据权利要求2所述的多腔封装件，其中所述晶体管管芯的所述第二端子电连接至第一个所述金属迹线，并且所述垂直晶体管管芯的所述第三端子电连接至第二个所述金属迹线。
4.根据权利要求1所述的多腔封装件，其中至少一个所述半导体管芯是缺少有源器件的无源半导体管芯。
5.根据权利要求1所述的多腔封装件，其中：
第一个所述半导体管芯是多尔蒂放大器电路的驱动器级管芯；
第二个所述半导体管芯是所述多尔蒂放大器电路的主放大器管芯；
第三个所述半导体管芯是所述多尔蒂放大器电路的峰值放大器管芯；
第一个所述金属迹线形成位于所述驱动器级管芯的输出与所述主放大器管芯的输入和所述峰值放大器管芯的输入之间的级间匹配；以及
第二个所述金属迹线形成电连接至所述主放大器管芯的输出和所述峰值放大器管芯的输出的多尔蒂组合器。
6.根据权利要求5所述的多腔封装件，其中第三个所述金属迹线在所述驱动器级管芯的输入处形成移相器或衰减器。
7.根据权利要求1所述的多腔封装件，其中：
第一个所述半导体管芯是功率放大器电路的驱动器级管芯；
第二个所述半导体管芯是所述功率放大器电路的功率级管芯；
第一个所述金属迹线形成所述驱动器级管芯的输出与所述功率级管芯的输入之间的级间匹配；以及
第二个所述金属迹线电连接至所述功率级管芯的输出。
8.根据权利要求7所述的多腔封装件，其中所述功率放大器电路是RF功率放大器电路，并且第二个所述金属迹线形成所述RF功率放大器电路的天线。
9.根据权利要求1所述的多腔封装件，还包括：一个或多个附加半导体管芯，附接至所述电路板的背向所述单个金属法兰的表面并且电连接至设置在所述电路板的开口中的一个或多个所述半导体管芯。
10.根据权利要求1所述的多腔封装件，其中所述电路板具有至少一个横向延伸部，所述至少一个横向延伸部悬在所述单个金属法兰之上以形成用于将所述多腔封装件附接至另一结构的接口。
11.根据权利要求1所述的多腔封装件，其中所述电路板具有横向延伸部，所述横向延伸部悬在所述单个金属法兰之上，并且其中第一个所述金属迹线延伸到所述横向延伸部上并提供用于所述电路的输入或输出电路径。
12.根据权利要求11所述的多腔封装件，其中第一个所述金属迹线包括延伸穿过所述横向延伸部的至少一个通孔。
13.根据权利要求11所述的多腔封装件，其中第一个所述金属迹线还延伸到所述横向延伸部的边缘面上。
14.根据权利要求13所述的多腔封装件，其中第一个所述金属迹线从所述边缘面延伸到所述横向延伸部的与所述单个金属法兰相邻的底面上。
15.根据权利要求1所述的多腔封装件，其中：
所述电路板具有相对的第一横向延伸部和第二横向延伸部，所述第一横向延伸部和所述第二横向延伸部均悬在所述单个金属法兰之上；
第一个所述金属迹线延伸到所述第一横向延伸部上并且提供用于所述电路的输入电路径；以及
第二个所述金属迹线延伸到所述第二横向延伸部上并且提供用于所述电路的输出电路径。
16.一种制造多腔封装件的方法，所述方法包括：
提供具有相对的第一主面和第二主面的单个金属法兰；
将电路板附接至所述单个金属法兰的所述第一主面，所述电路板具有露出所述单个金属法兰的所述第一主面的不同区域的多个开口；
在所述电路板的开口中放置多个半导体管芯；
将所述半导体管芯附接至所述单个金属法兰的所述第一主面；以及
通过所述电路板的多个金属迹线电互连所述半导体管芯以形成电路。
17.根据权利要求16所述的方法，其中第一个所述半导体管芯是多尔蒂放大器电路的驱动器级管芯，第二个所述半导体管芯是所述多尔蒂放大器电路的主放大器管芯，第三个所述半导体管芯是所述多尔蒂放大器电路的峰值放大器管芯，并且通过所述金属迹线电互连所述半导体管芯以形成所述电路包括：
在所述驱动器级管芯的输出与所述主放大器管芯的输入和所述峰值放大器管芯的输入之间电连接第一个所述金属迹线，以形成所述驱动器级管芯与所述放大器管芯之间的级间匹配；以及
将第二个所述金属迹线电连接至所述主放大器管芯的输出和所述峰值放大器管芯的输出，以形成连接至所述放大器管芯的输出的多尔蒂组合器。
18.根据权利要求16所述的方法，其中第一个所述半导体管芯是功率放大器电路的驱动器级管芯，第二个所述半导体管芯是所述功率放大器电路的功率级管芯，并且通过所述金属迹线电互连所述半导体管芯以形成所述电路包括：
在所述驱动器级管芯的输出与所述功率级管芯的输入之间电连接第一个所述金属迹线，以形成所述驱动器级管芯与所述功率级管芯之间的级间匹配；以及
将第二个所述金属迹线电连接至所述功率级管芯的输出。
19.根据权利要求16所述的方法，其中所述电路板具有横向延伸部，所述横向延伸部悬在所述单个金属法兰之上以形成用于将所述多腔封装件附接至另一结构的接口。
20.根据权利要求16所述的方法，其中所述电路板具有横向延伸部，所述横向延伸部悬在所述单个金属法兰之上，并且其中一个所述金属迹线延伸到在所述横向延伸部上并提供用于所述电路的输入或输出电路径。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113474992A (zh) * 2019-01-20 2021-10-01 Iad信息自动化及数据处理有限公司 具有宽带HF功率放大器特别是具有有源负载调制的N路Doherty放大器的传输和接收设备

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9882538B2 (en) * 2015-03-24 2018-01-30 Skyworks Solutions, Inc. Distributed output matching network for a radio frequency power amplifier module
US10468399B2 (en) * 2015-03-31 2019-11-05 Cree, Inc. Multi-cavity package having single metal flange
US9997476B2 (en) 2015-10-30 2018-06-12 Infineon Technologies Ag Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange
US10699992B2 (en) * 2015-12-23 2020-06-30 Intel Corporation Reverse mounted gull wing electronic package
US9774301B1 (en) * 2016-05-17 2017-09-26 Nxp Usa, Inc. Multiple-path RF amplifiers with angularly offset signal path directions, and methods of manufacture thereof
US10978411B2 (en) * 2016-11-18 2021-04-13 Infineon Technologies Ag RF power package having planar tuning lines
US10332847B2 (en) * 2017-06-01 2019-06-25 Infineon Technologies Ag Semiconductor package with integrated harmonic termination feature
US10398031B2 (en) * 2017-09-29 2019-08-27 International Business Machines Corporation Integrating Josephson amplifiers or Josephson mixers into printed circuit boards
KR102243628B1 (ko) * 2018-12-28 2021-04-23 주식회사 워프솔루션 소형화가 가능한 파워 앰프 모듈 패키지
US11817832B2 (en) 2020-01-03 2023-11-14 Skyworks Solutions, Inc. Power amplifier output matching
CN113327898B (zh) * 2020-02-28 2022-10-28 深南电路股份有限公司 封装结构的制作方法及封装结构
CN113972201A (zh) * 2020-07-22 2022-01-25 苏州远创达科技有限公司 一种大功率射频器件的封装结构和封装方法
CN117413461B (zh) * 2022-04-28 2024-06-25 苏州华太电子技术股份有限公司 用于信号放大的封装结构及信号放大器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414592A (en) * 1993-03-26 1995-05-09 Honeywell Inc. Heat transforming arrangement for printed wiring boards
US5736781A (en) * 1993-10-18 1998-04-07 Oki Electric Industry Co., Ltd. IC module and a data carrier employing the same
US5754402A (en) * 1995-06-22 1998-05-19 Sumitomo Electric Industries, Ltd. Power amplifying module
EP2575167A2 (en) * 2011-09-30 2013-04-03 Fujitsu Limited Electronic device
CN103219317A (zh) * 2011-12-15 2013-07-24 英飞凌科技股份有限公司 集成电路封装以及用于制造集成电路封装的方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3823467A (en) * 1972-07-07 1974-07-16 Westinghouse Electric Corp Solid-state circuit module
US3986196A (en) 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
EP0394327B1 (de) * 1987-12-31 1991-11-06 Franz Kirsten Elektrotechnische Spezialfabrik Zentralelektrik für kraftfahrzeuge
US5182632A (en) * 1989-11-22 1993-01-26 Tactical Fabs, Inc. High density multichip package with interconnect structure and heatsink
JPH06295962A (ja) 1992-10-20 1994-10-21 Ibiden Co Ltd 電子部品搭載用基板およびその製造方法並びに電子部品搭載装置
US5622588A (en) 1995-02-02 1997-04-22 Hestia Technologies, Inc. Methods of making multi-tier laminate substrates for electronic device packaging
US5597643A (en) 1995-03-13 1997-01-28 Hestia Technologies, Inc. Multi-tier laminate substrate with internal heat spreader
US5609889A (en) 1995-05-26 1997-03-11 Hestia Technologies, Inc. Apparatus for encapsulating electronic packages
US5843808A (en) 1996-01-11 1998-12-01 Asat, Limited Structure and method for automated assembly of a tab grid array package
JPH10242377A (ja) 1997-02-25 1998-09-11 Hitachi Ltd 高周波電力増幅器モジュール
JPH10294401A (ja) * 1997-04-21 1998-11-04 Matsushita Electric Ind Co Ltd パッケージ及び半導体装置
US5973389A (en) 1997-04-22 1999-10-26 International Business Machines Corporation Semiconductor chip carrier assembly
US6020636A (en) 1997-10-24 2000-02-01 Eni Technologies, Inc. Kilowatt power transistor
JPH11211594A (ja) * 1998-01-28 1999-08-06 Mitsubishi Electric Corp 半導体圧力センサ
US6329713B1 (en) 1998-10-21 2001-12-11 International Business Machines Corporation Integrated circuit chip carrier assembly comprising a stiffener attached to a dielectric substrate
US6261868B1 (en) 1999-04-02 2001-07-17 Motorola, Inc. Semiconductor component and method for manufacturing the semiconductor component
KR100335481B1 (ko) 1999-09-13 2002-05-04 김덕중 멀티 칩 패키지 구조의 전력소자
US6521982B1 (en) 2000-06-02 2003-02-18 Amkor Technology, Inc. Packaging high power integrated circuit devices
JP2003521127A (ja) * 2000-01-28 2003-07-08 エリクソン インコーポレイテッド 多重アース信号路ｌｄｍｏｓ電力用パッケージ
US6511866B1 (en) 2001-07-12 2003-01-28 Rjr Polymers, Inc. Use of diverse materials in air-cavity packaging of electronic devices
JP2003179181A (ja) 2001-12-11 2003-06-27 Ngk Spark Plug Co Ltd 樹脂製配線基板
JP3813098B2 (ja) 2002-02-14 2006-08-23 三菱電機株式会社 電力用半導体モジュール
DE10223035A1 (de) 2002-05-22 2003-12-04 Infineon Technologies Ag Elektronisches Bauteil mit Hohlraumgehäuse, insbesondere Hochfrequenz-Leistungsmodul
JP4296778B2 (ja) 2002-12-17 2009-07-15 株式会社村田製作所 弾性表面波装置の製造方法
US7298046B2 (en) 2003-01-10 2007-11-20 Kyocera America, Inc. Semiconductor package having non-ceramic based window frame
US20040262781A1 (en) 2003-06-27 2004-12-30 Semiconductor Components Industries, Llc Method for forming an encapsulated device and structure
JP4524454B2 (ja) 2004-11-19 2010-08-18 ルネサスエレクトロニクス株式会社 電子装置およびその製造方法
US7961470B2 (en) * 2006-07-19 2011-06-14 Infineon Technologies Ag Power amplifier
US7541866B2 (en) 2006-09-29 2009-06-02 Nortel Networks Limited Enhanced doherty amplifier with asymmetrical semiconductors
US8067834B2 (en) * 2007-08-21 2011-11-29 Hvvi Semiconductors, Inc. Semiconductor component
US8338937B2 (en) 2008-08-07 2012-12-25 Estivation Properties Llc Flange package for a semiconductor device
US8013429B2 (en) 2009-07-14 2011-09-06 Infineon Technologies Ag Air cavity package with copper heat sink and ceramic window frame
US8110915B2 (en) 2009-10-16 2012-02-07 Infineon Technologies Ag Open cavity leadless surface mountable package for high power RF applications
US9083284B2 (en) * 2011-03-07 2015-07-14 Intel Corporation Wide-band multi stage Doherty power amplifier
CN102158190A (zh) 2011-04-29 2011-08-17 中兴通讯股份有限公司 一种多合体功率放大器及其实现方法
US8928404B2 (en) * 2011-05-13 2015-01-06 Intel Corporation Amplifier performance stabilization through preparatory phase
US8698291B2 (en) 2011-12-15 2014-04-15 Freescale Semiconductor, Inc. Packaged leadless semiconductor device
US8907467B2 (en) * 2012-03-28 2014-12-09 Infineon Technologies Ag PCB based RF-power package window frame
US9077285B2 (en) 2012-04-06 2015-07-07 Freescale Semiconductor, Inc. Electronic devices with multiple amplifier stages and methods of their manufacture
US8803302B2 (en) 2012-05-31 2014-08-12 Freescale Semiconductor, Inc. System, method and apparatus for leadless surface mounted semiconductor package
US9281283B2 (en) 2012-09-12 2016-03-08 Freescale Semiconductor, Inc. Semiconductor devices with impedance matching-circuits
US8816775B2 (en) 2012-09-13 2014-08-26 Freescale Semiconductor, Inc. Quiescent current determination using in-package voltage measurements
JP5970316B2 (ja) 2012-09-26 2016-08-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9105629B2 (en) 2013-03-07 2015-08-11 International Business Machines Corporation Selective area heating for 3D chip stack
US9240390B2 (en) 2013-06-27 2016-01-19 Freescale Semiconductor, Inc. Semiconductor packages having wire bond wall to reduce coupling
US9177943B2 (en) * 2013-10-15 2015-11-03 Ixys Corporation Power device cassette with auxiliary emitter contact
US9401682B2 (en) * 2014-04-17 2016-07-26 Freescale Semiconductor, Inc. Structure for a radio frequency power amplifier module within a radio frequency power amplifier package
US10468399B2 (en) * 2015-03-31 2019-11-05 Cree, Inc. Multi-cavity package having single metal flange
US9818659B2 (en) 2015-10-12 2017-11-14 Deca Technologies Inc. Multi-die package comprising unit specific alignment and unit specific routing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414592A (en) * 1993-03-26 1995-05-09 Honeywell Inc. Heat transforming arrangement for printed wiring boards
US5736781A (en) * 1993-10-18 1998-04-07 Oki Electric Industry Co., Ltd. IC module and a data carrier employing the same
US5754402A (en) * 1995-06-22 1998-05-19 Sumitomo Electric Industries, Ltd. Power amplifying module
EP2575167A2 (en) * 2011-09-30 2013-04-03 Fujitsu Limited Electronic device
CN103219317A (zh) * 2011-12-15 2013-07-24 英飞凌科技股份有限公司 集成电路封装以及用于制造集成电路封装的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113474992A (zh) * 2019-01-20 2021-10-01 Iad信息自动化及数据处理有限公司 具有宽带HF功率放大器特别是具有有源负载调制的N路Doherty放大器的传输和接收设备

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