CN106019823B - 压印设备、压印方法和制品制造方法 - Google Patents

压印设备、压印方法和制品制造方法 Download PDF

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Publication number
CN106019823B
CN106019823B CN201610195908.1A CN201610195908A CN106019823B CN 106019823 B CN106019823 B CN 106019823B CN 201610195908 A CN201610195908 A CN 201610195908A CN 106019823 B CN106019823 B CN 106019823B
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China
Prior art keywords
substrate
mold
imprint
pattern
imprint material
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CN201610195908.1A
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English (en)
Chinese (zh)
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CN106019823A (zh
Inventor
船吉智美
山崎拓郎
藤本正敬
山口裕充
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Canon Inc
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Canon Inc
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Publication of CN106019823A publication Critical patent/CN106019823A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
CN201610195908.1A 2015-03-31 2016-03-31 压印设备、压印方法和制品制造方法 Active CN106019823B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015074494A JP6611450B2 (ja) 2015-03-31 2015-03-31 インプリント装置、インプリント方法、及び物品の製造方法
JP2015-074494 2015-03-31

Publications (2)

Publication Number Publication Date
CN106019823A CN106019823A (zh) 2016-10-12
CN106019823B true CN106019823B (zh) 2020-07-21

Family

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CN201610195908.1A Active CN106019823B (zh) 2015-03-31 2016-03-31 压印设备、压印方法和制品制造方法

Country Status (4)

Country Link
US (1) US9946173B2 (enExample)
JP (1) JP6611450B2 (enExample)
KR (1) KR101950068B1 (enExample)
CN (1) CN106019823B (enExample)

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KR102022268B1 (ko) * 2018-02-14 2019-09-19 한국기계연구원 순간가열방식 및 용액전사방식의 임프린트 장치와, 그 방법
US10894420B2 (en) * 2018-04-11 2021-01-19 Canon Kabushiki Kaisha Ejection-material injecting method, ejection-material ejection apparatus, and imprinting apparatus
KR20250133459A (ko) * 2018-12-28 2025-09-05 에이에스엠엘 홀딩 엔.브이. 리소그래피 시스템에서 지지 구조물을 세정하기 위한 장치 및 방법
EP3698754B1 (en) * 2019-02-19 2022-10-05 DENTSPLY SIRONA Inc. Method for measuring patient-specific temporomandibular joint relation and transferring it into a virtual articulator
JP7327973B2 (ja) * 2019-03-29 2023-08-16 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
US11614693B2 (en) * 2021-06-30 2023-03-28 Canon Kabushiki Kaisha Method of determining the initial contact point for partial fields and method of shaping a surface
JP7699993B2 (ja) * 2021-07-30 2025-06-30 キヤノン株式会社 液体吐出装置、液体吐出方法、成形装置及び物品の製造方法
US11835763B2 (en) * 2021-10-22 2023-12-05 Northrop Grumman Systems Corporation Nanoimprinted photonic integrated circuits
JP7730727B2 (ja) * 2021-11-10 2025-08-28 キヤノン株式会社 インプリント装置、及び物品の製造方法

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Also Published As

Publication number Publication date
CN106019823A (zh) 2016-10-12
US9946173B2 (en) 2018-04-17
JP2016195183A (ja) 2016-11-17
JP6611450B2 (ja) 2019-11-27
KR20160117324A (ko) 2016-10-10
KR101950068B1 (ko) 2019-02-19
US20160291485A1 (en) 2016-10-06

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