CN105957852A - 半导体打线接合结构及方法 - Google Patents

半导体打线接合结构及方法 Download PDF

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CN105957852A
CN105957852A CN201610539731.2A CN201610539731A CN105957852A CN 105957852 A CN105957852 A CN 105957852A CN 201610539731 A CN201610539731 A CN 201610539731A CN 105957852 A CN105957852 A CN 105957852A
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teat
weld pad
bonding wire
ring
quasiconductor
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洪志成
吴孟霖
叶科廷
陈胜鸿
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

本发明关于一种半导体打线接合结构及方法。该打线接合结构包括一半导体元件及一焊线。该半导体元件的焊垫具有一中心凹部及一环状突部。该焊线具有一连接部，接合于该中心凹部。该环状突部连续地环绕该连接部，且大致上为一等宽的环形。

Description

半导体打线接合结构及方法
本申请是申请人于2012年7月13日提交的、申请号为“201210243588.4”的、发明名称为“半导体打线接合结构及方法”的发明专利申请的分案申请。
技术领域
本发明关于一种半导体接合，特别的是，关于半导体打线接合结构及半导体打线接合方法。
背景技术
已知半导体工艺中，为了电性连接的目的，需将铜线接合至铝焊垫上。然而，已知打线接合工艺中，铜线仅在相对于铝焊垫的一方向振动，如此会造成铝挤尺寸过大，而提高铝墙受损与铝挤短路的风险，因而降低良率。上述情况在铝焊垫的厚度较大时更为明显。
发明内容
本揭露的一方面关于一种半导体接合结构。在一实施例中，一种半导体打线接合结构包括一半导体元件及一焊线。该半导体元件具有一焊垫，该焊垫具有一焊垫表面、一中心凹部及一环状突部，该中心凹部凹陷于该焊垫表面，该环状突部突出于该焊垫表面，且连续地环绕该中心凹部。该焊线具有一连接部，位于该焊线的一末端，该连接部接合于该中心凹部，该环状突部环绕该连接部，且大致上为一等宽的环形。
本揭露的另一方面关于一种制造方法。在一实施例中，一种半导体打线接合方法包括以下步骤：(a)形成一球状结构于一焊线的一末端；(b)移动该焊线，使得该球状结构接触一半导体元件的一焊垫；(c)施加一第一下压力及一第一振动能量于该焊线，使得该焊线沿着一第一方向振动，而推挤部分该焊垫；(d)停止该第一振动能量；及(e)改变该第一下压力成一第二下压力，且同时施加一第二振动能量于该焊线，使得该焊线沿着一第二方向振动，而推挤部分该焊垫，其中该第二方向垂直该第一方向。
在本实施例中，由于焊线沿着一第一方向及第二方向推挤部分焊垫，使该环状突部大致上均匀环绕于该焊线的连接部，而形成一等宽的环形。本实施例可避免焊线沿着单一方向推挤部分焊垫时，使该环状突部容易形成一非等宽的椭圆形而超出焊垫范围，造成焊垫之间因环状突部互相接触而产生产品短路的风险，因而可提升良率。此外，该环状突部大致上均匀环绕于该焊线的连接部的一等宽的环形，可连带缩小该焊垫的尺寸，因此产品线路布局可提高，因而可降低生产成本。
附图说明
图1显示本发明的半导体打线接合结构的一实施例的一方向剖视示意图；
图2显示本发明的半导体打线接合结构的一实施例的另一方向剖视示意图；
图3显示本发明的半导体打线接合结构的一实施例的俯视示意图；及
图4至图7显示本发明的半导体打线接合方法的一实施例的示意图。
具体实施方式
参考图1，显示本发明的半导体打线接合结构的一实施例的一方向剖视示意图。该半导体打线接合结构1包括一半导体元件2及一焊线3。该半导体元件2(例如一芯片)具有一元件表面21、一焊垫22及一保护层23。
该焊垫22配置于该半导体元件2的元件表面21。该焊垫22具有一焊垫表面221、一中心凹部222及一环状突部223。该中心凹部222凹陷于该焊垫表面221且相对应于该焊线3的末端。该环状突部223突出于该焊垫表面221，且连续地环绕该中心凹部222。要注意的是，图1仅显示一方向剖视示意图，因此，仅显示第一突部223a，该第一突部223a为该环状突部223的一部分，且具有一第一宽度W1。在本实施例中，该焊垫22的材质为铝，且具有一厚度T，该厚度T大于1.5μm。
该保护层23配置于该半导体元件2的元件表面21并覆盖部分该焊垫22，且具有一开口231以显露该焊垫22的另一部份。该保护层23的材质可以是非导电高分子聚合物，例如：苯环丁烯(Benzocyclobutene,BCB)、聚酰亚胺(polyimide，PI)或环氧树脂(epoxy)；或者也可以是无机材质，例如：二氧化硅。
该焊线3(例如铜线或铜钯线)具有一连接部31，其位于该焊线3的一末端。该连接部31接合于该中心凹部222，该环状突部223环绕该连接部31。亦即，该连接部31、该中心凹部222及该环状突部223由于该焊线3推挤该焊垫22而形成。在本实施例中，该连接部31为圆盘状，且与该焊线3形成一侧视为大致T字形外观。该焊线3的硬度大于该焊垫22的硬度。
参考图2，显示本发明的半导体打线接合结构的一实施例的另一方向剖视示意图。图2仅显示第二突部223b，该第二突部223b为该环状突部223的一部分，且具有一第二宽度W2。
参考图3，显示本发明的半导体打线接合结构的一实施例的俯视示意图。该第一突部223a与该第二突部223b连续地形成该环状突部223，且该环状突部223大致上均匀环绕该连接部31。在本实施例中，该第一突部223a的第一宽度W1与该第二突部223b的第二宽度W2大致相等，亦即该环状突部223大致上为一等宽的环形，且该环状突部223的外缘大致上为正圆形，而非椭圆形。较佳地，该环状突部223的宽度(即该第一宽度W1或该第二宽度W2)小于该焊垫22的厚度T的2.5倍。
在本实施例中，由于该环状突部223均匀环绕于该连接部31的一等宽的环形，可使得该环状突部223不易超出该焊垫22的范围，因此可降低焊垫22之间因环状部互相接触而造成产品短路的风险，因而可提升良率。此外，因该环状突部223均匀环绕于该连接部31的一等宽的环形，可连带缩小该焊垫22的尺寸，因此产品线路布局可提高，因而可降低生产成本。上述情况在该焊垫22的厚度较大时更为明显。
参考图4至图7，显示本发明的半导体打线接合方法的一实施例的示意图。
参考图4，提供一半导体元件2(例如一芯片)。该半导体元件2具有元件表面21、一焊垫22及一保护层23。该焊垫22及该保护层23配置于该半导体元件2的元件表面21。在本实施例中，该保护层23覆盖该半导体元件2的元件表面21及部分该焊垫22，且具有一开口231以显露该焊垫22的另一部份。该保护层23的材质可以是非导电高分子聚合物，例如：苯环丁烯(Benzocyclobutene,BCB)、聚酰亚胺(polyimide，PI)或环氧树脂(epoxy)；或者也可以是无机材质，例如：二氧化硅。该焊垫22具有一焊垫表面221。在本实施例中，该焊垫22的材质为铝，且具有一厚度T，该厚度T大于1.5μm。
接着，将该半导体元件2置放于一打线接合装置。该打线接合装置包括一毛细管尖端(Capillary Tip)41、一加热装置42及一惰性气体提供装置44。该毛细管尖端41具有一中心孔411及一锥形表面412。该中心孔411用以供一焊线3(例如铜线)穿设其中，且该锥形表面412位于该中心孔411的一端。此时，该焊线3的一末端突出于该毛细管尖端41。
接着，形成一球状结构(Free Air Ball,FAB)30于该焊线3的该末端。在本实施例中，该加热装置42用以加热该焊线3的该末端，使其融化而形成该球状结构30。该加热装置42为一电子点火(Electronic Flame Off,EFO)装置，而以电子点火工艺融化该焊线3的该末端。此外，该惰性气体提供装置44提供一惰性气体至该球状结构30，以防止该球状结构30氧化。在本实施例中，该惰性气体为氮气或是氮氢气混合气体。
参考图5，向下移动该毛细管尖端41及该焊线3，且利用该锥形表面412的局限作用使得该球状结构30接触该半导体元件2的该焊垫22的该焊垫表面221，此时，部分该球状结构30的热能会传导至该焊垫22。接着，施加一第一下压力及一第一振动能量于该毛细管尖端41及该焊线3，使得该焊线3在下压同时沿着一第一方向(X方向)振动，而推挤部分该焊垫22。此时，该焊垫22因受热变软，加上该焊线3的推挤研磨动作，会在该焊垫22挤出该中心凹部222及该第一突部223a。该中心凹部222凹陷于该焊垫表面221。该第一突部223a位该中心凹部222的二侧，且具有一第一宽度W1。
与此同时，该焊线3亦因与该焊垫22的推挤而使得该球状结构30变形成该连接部31，该连接部31接合于该中心凹部222。
在本实施例中，图5的步骤中仅施加该第一振动能量使得该焊线3仅沿着该第一方向(X方向)振动，然而，在其他实施例中，图5的步骤中也可以同时施加一第三振动能量于该毛细管尖端41及该焊线3，使得该焊线3可同时沿着该第二方向(Y方向)振动，而推挤部分该焊垫22。
参考图6，其显示与图5不同剖视方向的示意图。停止该第一振动能量后，接着将该第一下压力改变成一第二下压力，且同时施加一第二振动能量于该毛细管尖端41及该焊线3，使得该焊线3在下压同时沿着一第二方向(Y方向)振动，而推挤部分该焊垫22，其中该第二方向(Y方向)垂直该第一方向(X方向)。此时，该焊垫22因该焊线3的持续推挤研磨动作，会使得该中心凹部222沿着该第二方向(Y方向)扩大，同时会推挤出该第二突部223b。该第二突部223b位该中心凹部222的二侧，且具有一第二宽度W2。在本实施例中，该第一突部223a与该第二突部223b连续地形成该环状突部223，且该环状突部223环绕该连接部31，如图3所示。
在本实施例中，该第一突部223a的第一宽度W1与该第二突部223b的第二宽度W2大致相等，亦即该环状突部223大致上为一等宽的环形，且该环状突部223的外缘大致上为圆形。较佳地，该环状突部223的宽度(即该第一宽度W1或该第二宽度W2)小于该焊垫22的厚度T的2.5倍。
与此同时，该焊线3亦因与该焊垫22的推挤而使得该连接部31变为圆盘状，且与该焊线3形成一侧视为大致T字形外观。在本实施例中，该第一下压力大于该第二下压力，且该第一振动能量小于该第二振动能量。
参考图7，仅该毛细管尖端41向上移动，以制得如图1至图3所示的该半导体打线接合结构1。
惟上述实施例仅为说明本发明的原理及其功效，而非用以限制本发明。因此，习于此技术的人士对上述实施例进行修改及变化仍不脱本发明的精神。本发明的权利范围应如权利要求书所列。

Claims (10)

1.一种半导体打线接合方法，包括以下步骤：
(a)形成一球状结构于一焊线的一末端；
(b)移动该焊线，使得该球状结构接触一半导体元件的一焊垫；
(c)施加一第一下压力及一第一振动能量于该焊线，使得该焊线沿着一第一方向振动，而推挤部分该焊垫，以于焊垫上形成一第一突部，且使得该球状结构变形成一连接部；
(d)停止该第一振动能量；及
(e)改变该第一下压力成一第二下压力，且同时施加一第二振动能量于该焊线，使得该焊线沿着一第二方向振动，而推挤部分该焊垫，以于焊垫上形成一第二突部，该第一突部的宽度与该第二突部的宽度大致相等，且该第一突部与该第二突部连续地形成一环状突部，并且该环状突部包围该连接部的外围，其中该第二方向大致垂直该第一方向，且该第一下压力大于该第二下压力，
其中，该步骤(c)更包括一施加一第三振动能量于该焊线的步骤，该第三振动能量使得该焊线沿着该第二方向振动，而推挤部分该焊垫。
2.一种半导体打线接合结构，包括：
一半导体元件，具有一焊垫，该焊垫具有一焊垫表面、一中心凹部及一环状突部，该中心凹部凹陷于该焊垫表面，该环状突部突出于该焊垫表面，且连续地环绕该中心凹部；及
一焊线，具有一连接部，位于该焊线的一末端，该连接部接合于该中心凹部，该环状突部环绕该连接部，且大致上为一等宽的环形，其中该焊线含有铜。
3.如权利要求2的半导体打线接合结构，其特征在于，该焊线為铜线或铜钯线。
4.如权利要求2的半导体打线接合结构，其特征在于，该环状突部包含第一突部及第二突部，第一突部具有一第一宽度，第二突部具有一第二宽度，该第一宽度与该第二宽度大致相等。
5.如权利要求2的半导体打线接合结构，其特征在于，该环状突部的外缘大致上为圆形。
6.如权利要求2的半导体打线接合结构，其特征在于，该连接部为圆盘状，且与该焊线形成一大致为T字形外观。
7.一种半导体打线接合结构，包括：
一半导体元件，具有一元件表面、一焊垫及一保护层，该焊垫配置于该元件表面，该焊垫具有一焊垫表面、一中心凹部及一环状突部，该中心凹部凹陷于该焊垫表面，该环状突部突出于该焊垫表面，且连续地环绕该中心凹部，该保护层配置于该元件表面并覆盖部分该焊垫；及
一焊线，具有一连接部，位于该焊线的一末端，该连接部接合于该中心凹部，该环状突部环绕该连接部，且大致上为一等宽的环形。
8.如权利要求7的半导体打线接合结构，其特征在于，该保护层具有一开口231以显露该焊垫的一部份。
9.如权利要求7的半导体打线接合结构，其特征在于，该焊线為铜线或铜钯线。
10.如权利要求7的半导体打线接合结构，其特征在于，该环状突部包含第一突部及第二突部，第一突部具有一第一宽度，第二突部具有一第二宽度，该第一宽度与该第二宽度大致相等。
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JP2003258042A (ja) * 2002-03-04 2003-09-12 Toyota Motor Corp ワイヤボンディング方法
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