CN105940562A - 各向异性导电膜及其制造方法 - Google Patents

各向异性导电膜及其制造方法 Download PDF

Info

Publication number
CN105940562A
CN105940562A CN201580007319.XA CN201580007319A CN105940562A CN 105940562 A CN105940562 A CN 105940562A CN 201580007319 A CN201580007319 A CN 201580007319A CN 105940562 A CN105940562 A CN 105940562A
Authority
CN
China
Prior art keywords
resin layer
anisotropic conductive
insulative resin
conductive film
conducting particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201580007319.XA
Other languages
English (en)
Other versions
CN105940562B (zh
Inventor
北村久美子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of CN105940562A publication Critical patent/CN105940562A/zh
Application granted granted Critical
Publication of CN105940562B publication Critical patent/CN105940562B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/144—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers using layers with different mechanical or chemical conditions or properties, e.g. layers with different thermal shrinkage, layers under tension during bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0036—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/03—3 layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/24—All layers being polymeric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/10—Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2270/00—Resin or rubber layer containing a blend of at least two different polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206—Insulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/51—Elastic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/704—Crystalline
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2333/00—Polymers of unsaturated acids or derivatives thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2363/00—Epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/278—Post-treatment of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/278—Post-treatment of the layer connector
    • H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29083—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/81204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
    • H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
    • H01R13/2414—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means conductive elastomers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

各向异性导电膜(1)具有第1绝缘性树脂层(2)及第2绝缘性树脂层(3)。第1绝缘性树脂层(2)由光聚合树脂形成，第2绝缘性树脂层(3)由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成，第1绝缘性树脂层(2)的第2绝缘性树脂层(3)一侧表面上，各向异性导电连接用的导电粒子(10)以单层配置。各向异性导电膜整体的弹性模量为0.13MPa以上。

Description

各向异性导电膜及其制造方法
技术领域
本发明涉及各向异性导电膜及其制造方法。
背景技术
IC芯片等电子部件的安装中广泛使用各向异性导电膜，近年来，从适用于高密度安装的观点出发，以导通可靠性和绝缘性的提高、导电粒子捕捉率的提高、制造成本的降低等为目的，有人提出了由以单层配置的各向异性导电连接用的导电粒子和2层构造的绝缘性树脂层形成的各向异性导电膜(专利文献1)。
该各向异性导电膜如下制造：在粘着层上以单层且细密的方式配置导电粒子，对该粘着层进行2轴延伸处理，从而形成排列有导电粒子的片，将该片上的导电粒子转印到含有热固化性树脂和潜在性固化剂的绝缘性树脂层，进而在被转印的导电粒子上层压含有热固化性树脂、但不含有潜在性固化剂的其他绝缘性树脂层(专利文献1)。
现有技术文献
专利文献
专利文献1：日本专利第4789738号说明书。
发明内容
发明所要解决的课题
然而，就专利文献1的各向异性导电膜而言，因为使用不含有潜在性固化剂的绝缘性树脂层，所以，通过各向异性导电连接时的加热，不含有潜在性固化剂的绝缘性树脂层容易产生比较大的树脂流，导电粒子也变得容易沿着该流而流动，故而，尽管通过2轴延伸使导电粒子以单层且均等的间隔排列，也还是产生导电粒子捕捉率的降低、短路的发生(绝缘性的降低)等问题。
另外，各向异性导电膜的回缩性弱，若在进行各向异性导电连接的情况下假压接后进行回复(修补，repair)，则也存在膜断裂或在连接面残留树脂的问题。
本发明的目的是解决以上的现有技术的问题点，在具有以单层配置的导电粒子的多层构造的各向异性导电膜中实现良好的导电粒子捕捉率、良好的导通可靠性及良好的回复性。
用于解决课题的手段
本发明人发现，在光聚合性树脂层的一面上以单层配置导电粒子，通过照射紫外线将导电粒子固定化于光聚合树脂上，进而在固定化的导电粒子上层叠通过热或光聚合的聚合性树脂层，由此得到的各向异性导电膜的导电粒子捕捉率和导通可靠性优异，进而，若是提高各向异性导电膜整体的弹性模量以增强膜的回缩性，则可以抑制各向异性导电连接时熔融的绝缘性树脂层的挤出(溢出)，也提高假压接后的回复性，从而完成了本发明。
即，本发明提供各向异性导电膜，其中，所述各向异性导电膜是第1绝缘性树脂层及第2绝缘性树脂层层叠而成的各向异性导电膜，
第1绝缘性树脂层由光聚合树脂形成，
第2绝缘性树脂层由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成，
第1绝缘性树脂层的第2绝缘性树脂层一侧表面上，各向异性导电连接用的导电粒子以单层配置，
各向异性导电膜整体的弹性模量为0.13MPa以上。
特别是，提供在第1绝缘性树脂层和第2绝缘性树脂层之间具有由结晶性树脂形成的中间层的方式。
此外，第2绝缘性树脂层优选是使用通过加热引发聚合反应的热聚合引发剂的热聚合性树脂层，但也可以是使用通过光引发聚合反应的光聚合引发剂的光聚合性树脂层。也可以是并用热聚合引发剂和光聚合引发剂的热光聚合性树脂层。
另外，本发明提供上述的各向异性导电膜的制造方法，其中，所述制造方法具有以下的工序(A)～(C)：
工序(A)
在光聚合性树脂层上使导电粒子以单层配置的工序；
工序(B)
通过相对于配置有导电粒子的光聚合性树脂层照射紫外线来进行光聚合反应，以形成导电粒子固定化于表面的第1绝缘性树脂层的工序；
工序(C)
形成由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成的第2绝缘性树脂层的工序；
工序(B)中，通过以各向异性导电膜整体的弹性模量为0.13MPa以上的方式进行光聚合反应，来形成第1绝缘性树脂层，
将通过工序(C)形成的第2绝缘性树脂层层叠于通过工序(B)形成的第1绝缘性树脂层的导电粒子一侧。
另外，作为上述的各向异性导电膜的制造方法的另一方法，提供具有以下的工序(A)～(D)的制造方法：
工序(A)
在光聚合性树脂层上使导电粒子以单层配置的工序；
工序(B)
通过相对于配置有导电粒子的光聚合性树脂层照射紫外线来进行光聚合反应，以形成导电粒子固定化于表面的第1绝缘性树脂层的工序；
工序(C)
形成由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成的第2绝缘性树脂层的工序；
工序(D)
形成在通过工序(B)形成的第1绝缘性树脂层的导电粒子一侧依次层叠有由结晶性树脂形成的中间层和第2绝缘性树脂层的层叠体的工序。
除此之外，本发明还提供通过上述的各向异性导电膜使第1电子部件与第2电子部件进行各向异性导电连接而得的连接构造体。
发明效果
就本发明的各向异性导电膜而言，使光聚合性树脂层进行光聚合而得的第1绝缘性树脂层、通过热或光聚合的第2绝缘性树脂层层叠，进而，第1绝缘性树脂层的第2绝缘性树脂层一侧表面上，各向异性导电连接用的导电粒子以单层配置。因此，可以通过进行了光聚合的第1绝缘性树脂层牢固地固定化导电粒子，可以防止导电粒子因各向异性导电连接时的树脂流而在端子面方向上流动。因此，依据本发明的各向异性导电膜，可以实现良好的导电粒子捕捉率、导通可靠性及低短路发生率。
特别是，在形成第1绝缘性树脂层时，若是在使光聚合性树脂进行光聚合时从导电粒子侧照射紫外线，则导电粒子的下方(背侧)的光聚合性树脂由于成为导电粒子的影子而无法充分地照射紫外线。因此，成为了导电粒子的影子的光聚合树脂与未成为影子的光聚合树脂相比固化率相对低，各向异性导电连接时导电粒子良好地压入，可更好地实现良好的导通可靠性、短路发生率的降低。
另一方面，在形成第1绝缘性树脂层时，若是从导电粒子的相反一侧或两侧对光聚合性树脂照射紫外线，则促进导电粒子的固定化，可以在各向异性导电膜的生产线上确保稳定的质量。另外，在各向异性导电膜的制造后卷取到卷轴上或各向异性导电连接时从膜的卷轴引出的工序中，即使对各向异性导电膜施加不必要的外部应力，外部应力的影响也难以波及各向异性导电连接前的导电粒子的排列。
另外，一般地，就卷取至卷轴上的各向异性导电膜而言，由于施加到各向异性导电膜上的应力，绝缘性树脂层有挤出之虞，也由于回缩性弱(刚性低)而存在假压接后难以回复之虞，但是，就本发明的各向异性导电膜而言，膜整体的弹性模量为0.13MPa以上，膜具有回缩性，因此，可以抑制绝缘性树脂层的挤出，也可以提高假压接后的回复性。另外，由于膜具有回缩性，即使是固定化于假压接时的基板时，也可以防止膜的偏移(错位)或由弯曲所致的导电粒子的排列错乱。
此外，对于本发明的各向异性导电膜，第2绝缘性树脂层由通过热反应的聚合性树脂形成的情况下，使用其的电子部件的各向异性导电连接可以与使用通常的各向异性导电膜的连接方法同样地进行。
另一方面，对于本发明的各向异性导电膜，第2绝缘性树脂层由通过光反应的聚合性树脂形成的情况下，对于使用其的第1电子部件和第2电子部件的各向异性导电连接，进行利用连接工具的压入直到光反应结束即可。在该情况下，也可以加热连接工具等，以便促进树脂流动或粒子的压入。另外，第2绝缘性树脂层中并用通过热反应的聚合性树脂和通过光反应的聚合性树脂的情况下，也与上述同样地进行利用连接工具的压入直到光反应结束且进行加热即可。
另外，利用光反应对第1电子部件和第2电子部件进行各向异性导电连接的情况下，从具有透光性的电子部件一侧进行光照射即可。
附图说明
图1是本发明的第1实施例的各向异性导电膜1A的截面图。
图2是本发明的第2实施例的各向异性导电膜1B的截面图。
图3A是第1实施例的各向异性导电膜的制造方法的工序(A)的说明图。
图3B是第1实施例的各向异性导电膜的制造方法的工序(B)的说明图。
图3C是第1实施例的各向异性导电膜的制造方法的工序(B)的说明图。
图3D是第1实施例的各向异性导电膜的制造方法的工序(C)的说明图。
图3E是持续第1实施例的各向异性导电膜的制造方法的工序(C)的工序的说明图。
图3F是持续第1实施例的各向异性导电膜的制造方法的工序(C)的工序的说明图。
图4A是第2实施例的各向异性导电膜的制造方法中的工序(D)的方法(i)的说明图。
图4B是第2实施例的各向异性导电膜的制造方法中的工序(D)的方法(i)的说明图。
图4C是通过第2实施例的各向异性导电膜的制造方法的工序(D)的方法(i)得到的各向异性导电膜的截面图。
图5是第2实施例的各向异性导电膜的制造方法中的工序(D)的方法(ii)的说明图。
图6是通过第2实施例的各向异性导电膜的制造方法的工序(D)的方法(ii)得到的各向异性导电膜的截面图。
具体实施方式
以下，参照附图详细说明本发明的各向异性导电膜的一个例子。此外，各图中，相同标记表示相同或相等的构成因素。另外，对于本发明中的弹性模量，对各向异性导电膜的粘度，使用旋转式流变仪(TAInstruments公司)，在30℃于扭动方向上施加一定位移(测定压力0～5g)，测定应力随时间的变化，在经过0.1分钟时测定粘接材料的应力(弹性模量)，经计算得到。
＜＜各向异性导电膜＞＞
图1是本发明的第1实施例的各向异性导电膜1A的截面图。该各向异性导电膜1A中，第1绝缘性树脂层2和第2绝缘性树脂层3层叠，对于各向异性导电连接用的导电粒子10，在第1绝缘性树脂层2的第2绝缘性树脂层3一侧的表面2a上，各向异性导电连接用的导电粒子以单层配置。
另外，图2是本发明的第2实施例的各向异性导电膜1B的截面图。该各向异性导电膜1B与第1实施例的各向异性导电膜1A的不同在于，在第1绝缘性树脂层2和第2绝缘性树脂层3之间具有由结晶性树脂形成的中间层4。
对于各向异性导电膜1A、1B的任一者，各向异性导电膜整体的弹性模量均为0.13MPa以上，由此成为具有回缩性的膜。但是，图1的第1实施例的各向异性导电膜1A中，第1绝缘性树脂层2的弹性模量大大有助于膜的回缩性强度，图2的第2实施例的各向异性导电膜1B中，中间层4的弹性模量大大有助于膜的回缩性强度，就此而言，双方是不同的。除此之外的方面，第1、第2各向异性导电膜1A、1B同样地构成。
＜第1绝缘性树脂层2＞
构成本发明的各向异性导电膜1A、1B的第1绝缘性树脂层2由光聚合树脂形成。例如，使含有丙烯酸酯化合物和光自由基聚合引发剂的光自由基聚合性树脂层进行光自由基聚合而形成。通过第1绝缘性树脂层2进行光聚合，可以适度地固定化导电粒子10。即，即使各向异性导电连接时加热各向异性导电膜1A，第1绝缘性树脂层2也难以流动，因此，可以大幅抑制导电粒子10因树脂流而不必要地流动所致的短路发生。
这里，第1实施例的各向异性导电膜1A中，以第1绝缘性树脂层2的弹性模量为0.06MPa以上的方式进行光聚合反应，由此使各向异性导电膜1A整体的弹性模量为0.13MPa以上，使膜具有回缩性。
对于这样的第1绝缘性树脂层2的弹性模量的调整，可以通过对形成第1绝缘性树脂层2的光聚合性树脂层的紫外线照射量和弹性体的掺混等调整固化率来进行。
另外，第1、第2实施例的各向异性导电膜1A、1B中，第1绝缘性树脂层2内导电性粒子10存在于第2绝缘性树脂层3一侧的区域2X(即，位于导电粒子10和第1绝缘性树脂层2的外侧表面2b之间的区域)的固化率优选与导电粒子10不存在于第2绝缘性树脂层3一侧的区域2Y的固化率相比低。第1绝缘性树脂层2的区域2X中，也可以残留未进行光固化的丙烯酸酯化合物和光自由基聚合引发剂。通过各向异性导电膜1A、1B具有这样的区域2X，各向异性导电连接时容易排除区域2X的绝缘性树脂，因此导电粒子10难以在第1绝缘性树脂层2的平面方向上移动，但是在厚度方向上被良好地压入。因此，可以提高导电粒子捕捉率，进而还提高导通可靠性和绝缘性。
这里，固化率是定义为乙烯基的减少比率的数值，从导电粒子1的厚度方向的压入性方面出发，第1绝缘性树脂层的区域2X的固化率优选为40～80%，区域2Y的固化率优选为70～100%，进而对于第1实施例的各向异性导电膜1A，从使第1绝缘性树脂层2的弹性模量为0.06MPa以上的方面出发，优选膜整体的固化率为75～100%。
(丙烯酸酯化合物)
作为变成丙烯酸酯单元的丙烯酸酯化合物，可以使用以往公知的光聚合性丙烯酸酯。例如，可以使用单官能(甲基)丙烯酸酯(这里，(甲基)丙烯酸酯中包括丙烯酸酯和甲基丙烯酸酯)、二官能以上的多官能(甲基)丙烯酸酯。本发明中，优选丙烯系单体的至少一部分使用多官能(甲基)丙烯酸酯，以便各向异性导电连接时能够热固化绝缘性树脂层。
就第1绝缘性树脂层2中的丙烯酸酯化合物的含量而言，过少则存在各向异性导电连接时难以赋予第1绝缘性树脂层2与第2绝缘性树脂层3的粘度之差的倾向，过多则存在固化收缩大而操作性降低的倾向，因此优选为2～70质量%，更优选为10～50质量%。
(聚合引发剂)
作为第1绝缘性树脂层的形成中使用的光聚合引发剂，可以从公知的光聚合引发剂中适当选择使用。例如，可列举苯乙酮类光聚合引发剂、苯甲基缩酮类光聚合引发剂、磷类光聚合引发剂等的光自由基聚合引发剂等。
另外，除了光聚合引发剂之外，也可以使用热聚合引发剂。作为热聚合引发剂，例如，可列举有机过氧化物或偶氮类化合物等的热自由基聚合引发剂等。特别是，可优选使用不发生成为气泡的原因的氮的有机过氧化物。
就光聚合引发剂的使用量而言，相对于丙烯酸酯化合物100质量份，过少则光聚合不充分进行，过多则成为刚性降低的原因，因此，优选为0.1～25质量份，更优选为0.5～15质量份。
(其他的树脂和聚合引发剂)
第1绝缘性树脂层2中也可根据需要含有环氧化合物和热阳离子或热阴离子聚合引发剂或光阳离子或光阴离子聚合引发剂。由此，可提高层间剥离强度。对于与环氧化合物一起使用的聚合引发剂，通过第2绝缘性树脂层3说明。第1绝缘性树脂层2中还可根据需要并用苯氧基树脂、不饱和聚酯树脂、饱和聚酯树脂、聚氨酯树脂、丁二烯树脂、聚酰亚胺树脂、聚酰胺树脂、聚烯烃树脂等的成膜树脂。
就第1绝缘性树脂层2的层厚而言，过薄则存在导电粒子捕捉率降低的倾向，过厚则存在导通电阻变高的倾向，因此，优选为1.0～6.0μm，更优选为2.0～5.0μm。
对于第1绝缘性树脂层2的形成，可在含有光聚合性树脂和光聚合引发剂的光聚合性树脂层上，通过膜转印法、模具转印法、喷墨法、静电附着法等的方法使导电粒子以单层附着，然后照射紫外线，由此进行。在该情况下，对于紫外线照射，优选从导电粒子侧照射，但是也可从与导电粒子相反一侧照射。特别是，从可将第1绝缘性树脂层的区域2X的固化率抑制为比区域2Y的固化率相对低的方面出发，优选仅从导电粒子侧照射紫外线。
这里光聚合可以以一阶段(即，一次光照射)进行，也可以以二阶段(即，二次光照射)进行。在该情况下，对于第二阶段的光照射，优选在第1绝缘性树脂层2的一面上形成第2绝缘性树脂层3之后，在含氧气氛(大气中)下从第1绝缘性树脂层2的另一面侧，以区域2X的固化率与区域2Y的固化率相比低的方式调整照射强度，或使用掩模进行。
进行这样的二阶段的光聚合时，从导电粒子10的厚度方向的压入性的方面出发，第1绝缘性树脂层的区域2X的第一阶段中的固化率优选为10～50%，第二阶段中的固化率优选为40～80%，区域2Y的第一阶段中的固化率优选为30～90%，第二阶段中的固化率优选为75～100%。
另外，进行二阶段的光聚合时，作为聚合引发剂也可以仅使用1种，但是由于粘性提高而优选使用引发反应的波长范围不同的2种光聚合引发剂。例如，优选并用：通过来自LED光源的波长365nm的光引发自由基反应的IRGACURE 369(BASFJapan(株))和通过来自高压水银灯光源的光引发自由基反应的IRGACURE 2959(BASFJapan(株))。这样，通过使用2种不同的固化剂，使树脂的结合复杂化，因此更精细地控制各向异性导电连接时的树脂的热流动的行为成为可能。
光聚合后的第1绝缘性树脂层2的最低熔融粘度优选与第2绝缘性树脂层3的最低熔融粘度相比高，具体而言，经流变仪测定的[第1绝缘性树脂层2的最低熔融粘度(mPa・s)]/[第2绝缘性树脂层3的最低熔融粘度(mPa・s)]的数值优选为1～1000，更优选为4～400。此外，就各自的优选最低熔融粘度而言，第1绝缘性树脂层2为100～100000mPa・s，更优选为500～50000mPa・s。第2绝缘性树脂层3优选为0.1～10000mPa・s，更优选为0.5～1000mPa・s。
＜导电粒子＞
作为导电粒子10，可以从以往公知的用于各向异性导电膜的导电粒子中适当选择使用。例如，可列举：镍、钴、银、铜、金、钯等金属粒子，金属包覆树脂粒子等。也能够并用2种以上。
作为导电粒子的平均粒径，过小则存在不能够吸收布线的高度偏差而电阻变高的倾向，过大则存在成为短路的原因的倾向，因此优选为1～10μm，更优选为2～6μm。
就这样的导电粒子的第1绝缘性树脂层2中的粒子量而言，过少则粒子捕捉数降低而各向异性导电连接变难，过多则有短路之虞，因此优选为每1平方mm为50～50000个，更优选为200～30000个。
就第1绝缘性树脂层2的厚度方向中的导电粒子10的位置而言，如图1、图2所示，优选不埋入第1绝缘性树脂层2内，而陷入第2绝缘性树脂层3。这是因为，若导电粒子10埋入第1绝缘性树脂层2，则将电子部件进行各向异性导电连接而得的连接构造体的导通电阻有变高之虞。对于陷入的程度(即，从第1绝缘性树脂层2突出的程度)，从导电粒子捕捉率和导通电阻的平衡出发，优选为导电粒子10的平均粒径的10～90%，更优选为20～80%。
＜第2绝缘性树脂层3＞
第2绝缘性树脂层3由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成。更具体而言，由下述层构成：含有环氧化合物、热阳离子或热阴离子聚合引发剂或光阳离子或光阴离子聚合引发剂、通过热或光进行聚合的聚合性树脂层，或含有丙烯酸酯化合物和热自由基或光自由基聚合引发剂、通过热或光进行自由基聚合的聚合性树脂层。
(环氧化合物)
作为形成第2绝缘性树脂层3的环氧化合物，优选列举出在分子内具有2个以上的环氧基的化合物或树脂。它们可以是液状，也可以是固体状。
(热阳离子聚合引发剂)
作为形成第2绝缘性树脂层3的热阳离子聚合引发剂，可以采用作为环氧化合物的热阳离子聚合引发剂公知的引发剂，例如，可以使用通过热产生酸的碘鎓盐、硫鎓盐、磷鎓盐、二茂铁类等，特别是，可以优选使用对温度显示良好的潜在性的芳香族硫鎓盐。
就热阳离子聚合引发剂的掺混量而言，过少则存在固化不良的倾向，过多则存在制品寿命降低的倾向，因此，相对于环氧化合物100质量份，优选为2～60质量份，更优选为5～40质量份。
(热阴离子聚合引发剂)
作为形成第2绝缘性树脂层3的热阴离子聚合引发剂，可以采用作为环氧化合物的热阴离子聚合引发剂公知的引发剂，例如，可以使用通过热产生碱的脂肪族胺类化合物、芳香族胺类化合物、二级或三级胺类化合物、咪唑类化合物、聚硫醇类化合物、三氟化硼-胺络合物、双氰胺、有机酰肼等，特别是可以优选使用对温度显示良好的潜在性的胶囊化咪唑类化合物。
就热阴离子聚合引发剂的掺混量而言，过少则存在固化不良的倾向，过多则存在制品寿命降低的倾向，因此，相对于环氧化合物100质量份，优选为2～60质量份，更优选为5～40质量份。
(光阳离子聚合引发剂及光阴离子聚合引发剂)
作为环氧化合物用的光阳离子聚合引发剂或光阴离子聚合引发剂，可以适当使用公知的引发剂。
(丙烯酸酯化合物)
对于形成第2绝缘性树脂层3的丙烯酸酯化合物，可以从关于第1绝缘性树脂层2说明的丙烯酸酯化合物中适当选择使用。
(热自由基聚合引发剂)
另外，在第2绝缘性树脂层3中含有丙烯酸酯化合物时，作为与丙烯酸酯化合物一起使用的热自由基聚合引发剂，可以从关于第1绝缘性树脂层2说明的热自由基聚合引发剂中适当选择使用。
就热自由基聚合引发剂的使用量而言，过少则固化不良，过多则制品寿命降低，因此，相对于丙烯酸酯化合物100质量份，优选为2～60质量份，更优选为5～40质量份。
(光自由基聚合引发剂)
作为丙烯酸酯化合物用的光自由基聚合引发剂，可以使用公知的光自由基聚合引发剂。
就光自由基聚合引发剂的使用量而言，过少则固化不良，过多则制品寿命降低，因此，相对于丙烯酸酯化合物100质量份，优选为2～60质量份，更优选为5～40质量份。
(第2绝缘性树脂层3的层厚)
就第2绝缘性树脂层3的层厚而言，从各向异性导电连接时的导电粒子捕捉性的方面出发，优选为3～20μm，更优选为5～15μm。
＜中间层4＞
中间层4是在图2所示的第2实施例的各向异性导电膜1B中设置在第1绝缘性树脂层和第2绝缘性树脂层之间的层，由结晶性树脂形成。
作为形成中间层4的结晶性树脂，优选常温下硬化的树脂，优选使中间层4和第1绝缘性树脂层2的层叠膜的弹性模量为0.14MPa以上。由此，可以使各向异性导电膜1B整体的弹性模量为0.13MPa以上。因此，可以抑制绝缘性树脂层的挤出，另外，可以提高假压接后的回复性。
另外，对于形成中间层4的结晶性树脂，优选不因各向异性导电连接的假压接时的热而熔融、通过施加真正压接的热而熔融的树脂。通过在真正压接中熔融，可以维持各向异性导电连接中的导通可靠性。进而，对于形成中间层4的树脂，从各向异性导电膜的制造容易性的方面出发，优选具有耐溶剂性、耐热性。
作为形成中间层4的结晶性树脂，例如可列举：PET等聚酯，聚丙烯，聚乙烯等聚烯烃，尼龙，离聚物等。
就中间层4的厚度而言，从各向异性导电膜的制造到各向异性导电连接工序的各种操作性的方面出发，优选为整体的厚度的5～40%的范围。
＜＜各向异性导电膜的制造方法＞＞
本发明的第1实施例的各向异性导电膜1A可进行以下的工序(A)～(C)来制造。
(工序(A))
如图3A所示，在根据需要于剥离膜30上形成的光聚合性树脂层20上，以单层配置导电粒子10。作为将导电粒子10以单层配置于光聚合性树脂层20上的方法，无特别限制，可以采用：日本专利第4789738号的实施例1的对通过粘着剂固定有导电粒子的树脂膜利用2轴延伸操作的方法和日本特开2010-33793号公报的使用模具的方法等。此外，作为导电粒子10的配置，优选纵横以既定间隔排列。另外，考虑到连接对象的尺寸、导通可靠性、绝缘性、导电粒子捕捉率等，优选在2维上最接近的粒子间距离为1～100μm左右。
(工序(B))
接着，通过相对于配置有导电粒子10的光聚合性树脂层20照射紫外线(UV)来进行光聚合反应，形成导电粒子10固定化于表面的第1绝缘性树脂层2。在该情况下，优选如图3B所示从导电粒子10一侧照射紫外线(UV)。由此，如图3C所示，第1绝缘性树脂层2中，可以使导电性粒子10存在于第2绝缘性树脂层3一侧的区域2X(位于第1绝缘性树脂层2的剥离膜30一侧表面2b和导电粒子10之间的区域)的第1绝缘性树脂层的固化率与导电粒子10不存在于第2绝缘性树脂层3一侧的区域2Y的固化率相比低。因此，各向异性导电连接时的导电粒子10的压入变得容易，且也能够抑制导电粒子10的连接平面方向的流动。
另外，该光聚合反应中，以各向异性导电膜1A整体的弹性模量为0.13MPa以上的方式调整第1绝缘性树脂层2的固化率。
(工序(C))
另一方面，如图3D所示，在剥离膜31上，通过常法形成由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成的第2绝缘性树脂层3。
其后，如图3E所示，将通过工序(C)形成的第2绝缘性树脂层3和通过工序(B)形成的第1绝缘性树脂层2的导电粒子10对置，如图3F所示进行热压接。在该情况下，不通过热压接产生过度的热聚合。然后，通过除掉剥离膜30、31，可以得到图1的各向异性导电膜1A。
另一方面，作为本发明的第2实施例的各向异性导电膜1B的制造方法，首先，与第1实施例的各向异性导电膜1A的制造方法同样地进行工序(A)、(B)、(C)。
接着，在工序(D)中，如图4C或图6所示，形成在通过工序(B)形成的第1绝缘性树脂层的导电粒子一侧上依次层叠有由结晶性树脂形成的中间层和第2绝缘性树脂层的层叠体，该工序(D)可通过以下的(i)或(ii)的方法进行。
方法(i)
在通过工序(C)形成的第2绝缘性树脂层3的表面上，如图4A所示，层叠由结晶性树脂形成的中间层4。接着，如图4B所示，将该层叠体的中间层4和通过工序(B)固定有导电粒子10的第1绝缘性树脂层2的导电粒子10一侧的表面对置，如图4C所示，对它们进行热压接。然后，通过除掉剥离膜30、31，可得到图2的各向异性导电膜1B。
方法(ii)
在通过工序(B)固定有导电粒子10的第1绝缘性树脂层2的导电粒子10一侧的表面上，如图5所示，层叠由结晶性树脂形成的中间层4，在其上对置通过工序(C)形成的第2绝缘性树脂层3，如图6所示，对它们进行热压接而层叠。然后，通过除掉剥离膜30、31，可得到图2的各向异性导电膜1B。
此外，在图5及图6中，导电粒子10从第1绝缘性树脂层2突出的突出量比图2所示的各向异性导电膜1B少，但是，这是显示本发明中导电粒子10从第1绝缘性树脂层2突出的突出量可做各种变化。
＜＜连接构造体＞＞
本发明的各向异性导电膜1A、1B优选在对IC芯片、IC模块等第1电子部件和柔性基板、玻璃基板等第2电子部件进行各向异性导电连接时适用。这样得到的连接构造体也是本发明的一部分。此外，从提高导通可靠性的方面出发，优选地，将各向异性导电膜的第1绝缘性树脂层2一侧配置于柔性基板等的第2电子部件一侧，并将第2绝缘性树脂层3一侧配置于IC芯片等的第1电子部件一侧。
实施例
以下，通过实施例更具体地说明本发明。
实施例1～6、比较例1
按照日本专利第4789738号的实施例1的操作，将导电粒子以单层排列，遵照表1所示的掺混(质量份)，对于由此形成的第1绝缘性树脂层、中间层和第2绝缘性树脂层层叠而得的各向异性导电膜，改变第1绝缘性树脂层的弹性模量或中间层的弹性模量来制作。
具体而言，首先，将丙烯酸酯化合物及光自由基聚合引发剂等在乙酸乙酯或甲苯中制备成固体成分为50质量%的混合液。将该混合液涂覆在厚度50μm的聚对苯二甲酸乙二醇酯膜上，使干燥厚度为3μm，在80℃的烘箱中干燥5分钟，从而形成了作为第1绝缘性树脂层的前体层的光自由基聚合性树脂层。
接着，在得到的光自由基聚合性树脂层的表面上，将平均粒径4μm的导电粒子(镀Ni/Au树脂粒子，AUL704，积水化学工业(株))以导电粒子间的最接近距离为4μm的方式单层格子状地排列。进而，从该导电粒子侧相对于光自由基聚合性树脂层，照射波长365nm、累积光量4000mJ/cm2的紫外线，由此形成导电粒子固定于表面的第1绝缘性树脂层。在该情况下，通过改变紫外线的照射量，如表1所示，改变了第1绝缘性树脂层的弹性模量。
另外，为了形成第2绝缘性树脂层，将热固化性树脂及聚合引发剂等在乙酸乙酯或甲苯中制备成固体成分为50质量%的混合液。将该混合液涂覆在厚度50μm的聚对苯二甲酸乙二醇酯膜上，使干燥厚度为12μm，在80℃的烘箱中干燥5分钟，由此形成第2绝缘性树脂层。
另一方面，作为中间层，以成为厚度5μm的膜的方式进行延伸处理而准备了熔点不同的3种结晶性树脂(日本聚乙烯(株)制NOVATEC EVALV211A(mp. 100℃)，NOVATECHDHF560(mp. 130℃)，Prime Polymer公司制PrimePolypro F329RA(mp.160℃))。
将这样得到的固定有导电粒子的第1绝缘性树脂层、结晶性聚酯膜中间层和第2绝缘性树脂层以导电粒子位于内侧的方式层压，由此得到了实施例1～6及比较例1的各向异性导电膜。在该情况下，在实施例1及比较例1中没有设置中间层。
实施例7
除了对光自由基聚合性树脂层的紫外线照射是从导电粒子侧和与导电粒子相反一侧累积光量各2000mJ/cm2进行以外，与实施例2同样操作，得到了各向异性导电膜。
评价
对于各实施例及比较例的各向异性导电膜，如下评价或测定了：(a)各向异性导电膜整体的弹性模量，(b)第1绝缘性树脂层的弹性模量，(c)第1绝缘性树脂层和中间层的层叠体的弹性模量，(d)各向异性导电膜的假压接回复性，(e)使用各向异性导电膜进行各向异性导电连接而得的连接构造体样本的安装粒子捕捉率，(f)相同连接构造体样本的初始导通性。结果示于表1。
(a)(b)(c)的弹性模量
使用旋转式流变仪(TAInstruments公司)，在30℃于扭动方向上施加定位移(测定压力0～5g)，测定应力随时间的变化，求得经过0.1分钟时膜的应力(弹性模量)。
(d)假压接回复性
相对于膜的压接性的评价用玻璃(全表面ITO覆盖，玻璃厚度0.7mm)，进行了各各向异性导电膜的假压接。在该情况下，通过工具宽度1.5mm的假压接机，使用作为缓冲材料的150μm厚的Teflon(注册商标)，在70℃、1MPa、2秒的条件下，将1.5mm狭缝宽度的各向异性导电膜的第1绝缘性树脂层假压接于评价用玻璃。
其后，通过从评价用玻璃在90°方向上机械拉伸来剥离各向异性导电膜，将剥离期间各向异性导电膜断裂、评价用玻璃表面残留树脂的状态评价为NG，将各向异性导电膜不断裂而能够将各向异性导电膜整体剥离的情况评价为OK。
(e)安装粒子捕捉率
使用各各向异性导电膜，将0.5×1.8×20.0mm大小的IC芯片(凸点尺寸30×85μm，凸点高度15μm，凸点间距50μm)在180℃、80MPa、5秒的条件下安装到0.5×50×30mm大小的Corning公司制的玻璃布线基板(1737F)上，得到了连接构造体样本。
“安装粒子捕捉率”
按照以下的式子，求得[加热加压后的连接构造体样本的凸点上实际捕捉的导电粒子数]/[加热加压前的连接构造体样本的凸点上存在的导电粒子数]的比例(%)，作为安装粒子捕捉率。
此外，对于加热加压前的连接构造体样本的凸点上存在的导电粒子数，由加热加压前的ACF的导电粒子的个数密度和凸点面积算出，对于加热加压后的连接构造体样本的凸点上存在的导电粒子数，通过光学显微镜的观察求得。
实际使用上，优选为50%以上。
安装粒子捕捉率(%)＝{[加热加压后的凸点上的导电粒子数]/[加热加压前的凸点上的导电粒子数]}×100
(f)初始导通性
测定了连接构造体样本的导通电阻。
[表1]
由表1可知，各实施例及比较例的各向异性导电膜的厚度全部相同。就实施例1～6的各向异性导电膜而言，膜整体的弹性模量在0.13～0.25MPa的范围，全都显示良好的假压接回复性。其中，就实施例2～4的各向异性导电膜而言，第1绝缘性树脂层的弹性模量相同，但是中间层的弹性模量不同，就实施例5的各向异性导电膜而言，第1绝缘性树脂层的弹性模量比较低，但是中间层的弹性模量高，就实施例6的各向异性导电膜而言，第1绝缘性树脂层的弹性模量高，所以膜整体的弹性模量高。
就实施例7而言，与实施例2相比安装粒子捕捉率略差，但是实际使用上没有问题，对于膜整体的弹性模量、假压接回复性、初始导通性，均与实施例2同样显示优选的结果。
相比之下，就比较例1的各向异性导电膜而言，由于膜整体的弹性模量低，所以假压接回复性差。
此外，各实施例及比较例的各向异性导电膜中，安装捕捉率及初始导通性均良好。
产业上的可利用性
本发明的各向异性导电膜层叠有使光自由基聚合性树脂层进行光自由基聚合而得的第1绝缘性树脂层和由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成的第2绝缘性树脂层，在第1绝缘性树脂层的第2绝缘性树脂层一侧表面上导电粒子以单层配置，因此显示由良好的导电粒子捕捉率带来的优异的初始导通性、导通可靠性、低短路发生率。进而，通过调整各向异性导电膜整体的弹性模量成为回缩性强的膜，因此，难以产生绝缘性树脂层挤出、各向异性导电连接的假压接时位置偏移、或假压接后难以回复的问题。因此，本发明的各向异性导电膜可用于与IC芯片等电子部件的布线基板的各向异性导电连接。电子部件的布线持续地狭小化，本发明在对狭小化的电子部件进行各向异性导电连接时特别有用。
附图标记说明
1A、1B　各向异性导电膜
2　 第1绝缘性树脂层
2a 　第1绝缘性树脂层的表面
2b 　第1绝缘性树脂层的外侧表面
2X 　第1绝缘性树脂层中导电粒子存在于第2绝缘性树脂层一侧的区域
2Y 　第1绝缘性树脂层中导电粒子不存在于第2绝缘性树脂层一侧的区域
3　 第2绝缘性树脂层
4　 中间层
10　 导电粒子
20 　光聚合性树脂层
30 　剥离膜
31 　剥离膜。

Claims (11)

1.各向异性导电膜，所述各向异性导电膜是第1绝缘性树脂层及第2绝缘性树脂层层叠而成的各向异性导电膜，
第1绝缘性树脂层由光聚合树脂形成，
第2绝缘性树脂层由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成，
第1绝缘性树脂层的第2绝缘性树脂层一侧表面上，各向异性导电连接用的导电粒子以单层配置，
各向异性导电膜整体的弹性模量为0.13MPa以上。
2.权利要求1所述的各向异性导电膜，其中，第1绝缘性树脂层的弹性模量为0.06MPa以上。
3.权利要求1所述的各向异性导电膜，其中，在第1绝缘性树脂层和第2绝缘性树脂层之间具有由结晶性树脂形成的中间层。
4.权利要求1或2记载的各向异性导电膜，其中，第1绝缘性树脂层和中间层的层叠膜的弹性模量为0.14MPa以上。
5. 权利要求1所述的各向异性导电膜的制造方法，其中，所述制造方法具有以下的工序(A)～(C)：
工序(A)
在光聚合性树脂层上使导电粒子以单层配置的工序；
工序(B)
通过相对于配置有导电粒子的光聚合性树脂层照射紫外线来进行光聚合反应，以形成导电粒子固定化于表面的第1绝缘性树脂层的工序；
工序(C)
形成由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成的第2绝缘性树脂层的工序；
工序(B)中，通过以各向异性导电膜整体的弹性模量为0.13MPa以上的方式进行光聚合反应，来形成第1绝缘性树脂层，
将通过工序(C)形成的第2绝缘性树脂层层叠于通过工序(B)形成的第1绝缘性树脂层的导电粒子一侧。
6.权利要求5所述的各向异性导电膜的制造方法，其中，工序(B)中，从导电粒子侧对光聚合性树脂层照射紫外线。
7. 权利要求1所述的各向异性导电膜的制造方法，其中，所述制造方法具有以下的工序(A)～(D)：
工序(A)
在光聚合性树脂层上使导电粒子以单层配置的工序；
工序(B)
通过相对于配置有导电粒子的光聚合性树脂层照射紫外线来进行光聚合反应，以形成导电粒子固定化于表面的第1绝缘性树脂层的工序；
工序(C)
形成由热阳离子或热阴离子聚合性树脂、光阳离子或光阴离子聚合性树脂、热自由基聚合性树脂或者光自由基聚合性树脂形成的第2绝缘性树脂层的工序；
工序(D)
形成在通过工序(B)形成的第1绝缘性树脂层的导电粒子一侧依次层叠有由结晶性树脂形成的中间层和第2绝缘性树脂层的层叠体的工序。
8.权利要求7所述的制造方法，其中，在通过工序(C)形成第2绝缘性树脂层后，在该第2绝缘性树脂层上层叠由结晶性树脂形成的中间层，将其层叠体和通过工序(B)形成的第1绝缘性树脂层层叠，由此进行工序(D)。
9.权利要求7所述的制造方法，其中，在通过工序(B)形成的第1绝缘性树脂层的导电粒子一侧，依次层叠由结晶性树脂形成的中间层及通过工序(C)形成的第2绝缘性树脂层，由此进行工序(D)。
10.权利要求7～9中任一项所述的各向异性导电膜的制造方法，其中，工序(B)中，从导电粒子侧对光聚合性树脂层照射紫外线。
11.连接构造体，其是通过权利要求1～4中任一项所述的各向异性导电膜使第1电子部件与第2电子部件进行各向异性导电连接而得。
CN201580007319.XA 2014-02-04 2015-01-29 各向异性导电膜及其制造方法 Active CN105940562B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-019863 2014-02-04
JP2014019863A JP6273875B2 (ja) 2014-02-04 2014-02-04 異方性導電フィルム及びその製造方法
PCT/JP2015/052492 WO2015119033A1 (ja) 2014-02-04 2015-01-29 異方性導電フィルム及びその製造方法

Publications (2)

Publication Number Publication Date
CN105940562A true CN105940562A (zh) 2016-09-14
CN105940562B CN105940562B (zh) 2019-01-22

Family

ID=53777840

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580007319.XA Active CN105940562B (zh) 2014-02-04 2015-01-29 各向异性导电膜及其制造方法

Country Status (6)

Country Link
US (1) US10902973B2 (zh)
JP (1) JP6273875B2 (zh)
KR (1) KR102439365B1 (zh)
CN (1) CN105940562B (zh)
TW (1) TWI648156B (zh)
WO (1) WO2015119033A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109804002A (zh) * 2016-10-18 2019-05-24 迪睿合株式会社 含填料膜
CN109841300A (zh) * 2019-04-03 2019-06-04 业成科技（成都）有限公司 异方性导电膜及其制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170130003A (ko) * 2016-05-17 2017-11-28 삼성디스플레이 주식회사 이방성 도전 필름을 포함하는 표시 장치 및 이방성 도전 필름의 제조 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148211A (ja) * 1994-11-25 1996-06-07 Hitachi Chem Co Ltd 接続部材及び該接続部材を用いた電極の接続構造・接続方法
JP2001052778A (ja) * 1999-08-06 2001-02-23 Hitachi Chem Co Ltd 異方導電性接着フィルムおよびその製造方法
CN101601171A (zh) * 2007-07-03 2009-12-09 索尼化学&信息部件株式会社 各向异性导电膜和其制造方法以及接合体
JP2013014755A (ja) * 2011-06-10 2013-01-24 Sekisui Chem Co Ltd 異方性導電材料、接続構造体及び接続構造体の製造方法
JP2013105636A (ja) * 2011-11-14 2013-05-30 Dexerials Corp 異方性導電フィルム、接続方法、及び接合体
JP2013149466A (ja) * 2012-01-19 2013-08-01 Sekisui Chem Co Ltd 異方性導電材料、接続構造体及び接続構造体の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838828B2 (ja) 2001-04-27 2011-12-14 旭化成株式会社 異方性を有する導電性接着シートおよびその製造方法
JP4789738B2 (ja) 2006-07-28 2011-10-12 旭化成イーマテリアルズ株式会社 異方導電性フィルム
JP2010033793A (ja) 2008-07-28 2010-02-12 Tokai Rubber Ind Ltd 粒子転写膜の製造方法
JP5066231B2 (ja) * 2010-07-28 2012-11-07 日東電工株式会社 フリップチップ型半導体裏面用フィルム、短冊状半導体裏面用フィルムの製造方法、及び、フリップチップ型半導体装置
US9102851B2 (en) * 2011-09-15 2015-08-11 Trillion Science, Inc. Microcavity carrier belt and method of manufacture

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148211A (ja) * 1994-11-25 1996-06-07 Hitachi Chem Co Ltd 接続部材及び該接続部材を用いた電極の接続構造・接続方法
JP2001052778A (ja) * 1999-08-06 2001-02-23 Hitachi Chem Co Ltd 異方導電性接着フィルムおよびその製造方法
CN101601171A (zh) * 2007-07-03 2009-12-09 索尼化学&信息部件株式会社 各向异性导电膜和其制造方法以及接合体
JP2013014755A (ja) * 2011-06-10 2013-01-24 Sekisui Chem Co Ltd 異方性導電材料、接続構造体及び接続構造体の製造方法
JP2013105636A (ja) * 2011-11-14 2013-05-30 Dexerials Corp 異方性導電フィルム、接続方法、及び接合体
JP2013149466A (ja) * 2012-01-19 2013-08-01 Sekisui Chem Co Ltd 異方性導電材料、接続構造体及び接続構造体の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109804002A (zh) * 2016-10-18 2019-05-24 迪睿合株式会社 含填料膜
CN109804002B (zh) * 2016-10-18 2022-11-01 迪睿合株式会社 含填料膜
CN109841300A (zh) * 2019-04-03 2019-06-04 业成科技（成都）有限公司 异方性导电膜及其制造方法
CN109841300B (zh) * 2019-04-03 2020-08-11 业成科技（成都）有限公司 异方性导电膜及其制造方法

Also Published As

Publication number Publication date
JP2015149128A (ja) 2015-08-20
US10902973B2 (en) 2021-01-26
US20170140850A1 (en) 2017-05-18
KR20160117462A (ko) 2016-10-10
JP6273875B2 (ja) 2018-02-07
KR102439365B1 (ko) 2022-09-01
TW201544316A (zh) 2015-12-01
WO2015119033A1 (ja) 2015-08-13
CN105940562B (zh) 2019-01-22
TWI648156B (zh) 2019-01-21

Similar Documents

Publication Publication Date Title
KR101843226B1 (ko) 이방성 도전 필름 및 그 제조 방법
CN106104930A (zh) 各向异性导电膜及其制备方法
CN1926675B (zh) 各向异性导电连接方法及各向异性导电粘合膜
CN105940564A (zh) 各向异性导电膜及其制造方法
CN105189655B (zh) 固化性组合物及连接结构体
CN104541416A (zh) 各向异性导电膜的制造方法和各向异性导电膜
CN106415938A (zh) 各向异性导电膜及其制备方法
CN106797081A (zh) 各向异性导电膜及连接结构体
CN107735909A (zh) 各向异性导电膜和连接结构体
CN107614650A (zh) 粘合剂组合物
CN106796826A (zh) 导电材料
CN107432084A (zh) 各向异性导电连接结构体、各向异性导电连接方法和各向异性导电粘接剂
CN105940562A (zh) 各向异性导电膜及其制造方法
CN105934816A (zh) 连接体
KR20120099424A (ko) 이방성 도전 접착 필름, 접속 구조체 및 그 제조 방법
CN106605273A (zh) 导电性粒子、导电材料及连接结构体
JP6269114B2 (ja) 異方性導電フィルム及びその製造方法
CN105940563B (zh) 各向异性导电膜及其制造方法
CN106063043A (zh) 各向异性导电膜及其制备方法
CN105940560A (zh) 各向异性导电膜及其制备方法
KR102450709B1 (ko) 이방성 도전 필름 및 그의 제조 방법
WO2017047671A1 (ja) 接続材料
CN105940561B (zh) 各向异性导电膜及其制备方法
CN107922817A (zh) 粘接剂组合物、各向异性导电性粘接剂组合物、电路连接材料及连接体
GB2563433A (en) Method of attaching rigid printed circuit boards on a substrate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1227175

Country of ref document: HK

GR01 Patent grant
GR01 Patent grant