TW201544316A - 異向性導電膜及其製造方法 - Google Patents

異向性導電膜及其製造方法 Download PDF

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Publication number
TW201544316A
TW201544316A TW104103537A TW104103537A TW201544316A TW 201544316 A TW201544316 A TW 201544316A TW 104103537 A TW104103537 A TW 104103537A TW 104103537 A TW104103537 A TW 104103537A TW 201544316 A TW201544316 A TW 201544316A
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Taiwan
Prior art keywords
resin layer
insulating resin
anisotropic conductive
conductive film
conductive particles
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TW104103537A
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English (en)
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TWI648156B (zh
Inventor
Kumiko Kitamura
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Dexerials Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/144—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers using layers with different mechanical or chemical conditions or properties, e.g. layers with different thermal shrinkage, layers under tension during bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0036—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/03—3 layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/24—All layers being polymeric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/10—Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2270/00—Resin or rubber layer containing a blend of at least two different polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206—Insulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/51—Elastic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/704—Crystalline
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2333/00—Polymers of unsaturated acids or derivatives thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2363/00—Epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/278—Post-treatment of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/278—Post-treatment of the layer connector
    • H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29083—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract

本發明之異向性導電膜1具有第1絕緣性樹脂層2及第2絕緣性樹脂層3。第1絕緣性樹脂層2係由光聚合樹脂所形成，第2絕緣性樹脂層3係由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成，且於第1絕緣性樹脂層2之第2絕緣性樹脂層3側表面單層地配置有異向性導電連接用之導電粒子10。異向性導電膜整體之彈性模數為0.13MPa以上。

Description

異向性導電膜及其製造方法
本發明係關於一種異向性導電膜及其製造方法。
異向性導電膜被廣泛用於IC晶片等電子零件之構裝，近年來，就應用於高密度構裝之觀點而言，為了導通可靠性或絕緣性之提高、導電粒子捕捉率之提高、製造成本之減少等，提出有由單層地配置之異向性導電連接用之導電粒子與雙層構造之絕緣性樹脂層所形成之異向性導電膜(專利文獻1)。
該異向性導電膜係藉由如下方式製造：於黏著層單層且密集地配置導電粒子，藉由對該黏著層進行雙軸延伸處理而形成排列有導電粒子之片材，將該片材上之導電粒子轉印至含有熱硬化性樹脂及潛伏性硬化劑之絕緣性樹脂層，進而於轉印之導電粒子上層壓含有熱硬化性樹脂但不含潛伏性硬化劑之另一絕緣性樹脂層(專利文獻1)。
先前技術文獻
專利文獻
專利文獻1：日本專利第4789738號說明書
然而，專利文獻1之異向性導電膜係使用不含潛伏性硬化劑之絕緣性樹脂層，因此因異向性導電連接時之加熱，容易於不含潛伏性硬化劑之絕緣性樹脂層產生相對較大之樹脂流動，導電粒子亦變得容易沿著該流動而流動，因此儘管藉由雙軸延伸而使導電粒子單層且均等間隔地排列，亦會產生導電粒子捕捉率之降低、短路之產生(絕緣性之降低)等問題。
又，亦存在異向性導電膜之韌性較弱，當於進行異向性導電連接之情形時之預壓接後進行修復時，膜斷裂或者樹脂殘留於連接面之問題。
本發明之目的在於解決以上之習知技術之問題，於具有單層地配置之導電粒子之多層構造之異向性導電膜中，實現良好之導電粒子捕捉率、良好之導通可靠性、及良好之修復性。
本發明人發現，將導電粒子單層地配置於光聚合性樹脂層之單面，且藉由照射紫外線而將導電粒子固定於光聚合樹脂，進而於已固定之導電粒子上積層藉由熱或光而聚合之聚合性樹脂層，如此而成之異向性導電膜之導電粒子捕捉率或導通可靠性優異，若進而提高異向性導電膜整體之彈性模數而增強膜之韌性，則可抑制異向性導電連接時熔融之絕緣性樹脂層之溢出，預壓接後之修復性亦提高，從而完成本發明。
即，本發明提供一種異向性導電膜，其積層有第1絕緣性樹脂層及第2絕緣性樹脂層， 第1絕緣性樹脂層係由光聚合樹脂所形成，第2絕緣性樹脂層係由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成，於第1絕緣性樹脂層之第2絕緣性樹脂層側表面單層地配置有異向性導電連接用之導電粒子，異向性導電膜整體之彈性模數為0.13MPa以上。
本發明尤其是提供一種於第1絕緣性樹脂層與第2絕緣性樹脂層之間具有由晶質樹脂所形成之中間層之態樣。
再者，第2絕緣性樹脂層較佳為使用藉由加熱而開始聚合反應之熱聚合起始劑的熱聚合性樹脂層，但亦可為使用藉由光而開始聚合反應之光聚合起始劑的光聚合性樹脂層。亦可為併用熱聚合起始劑及光聚合起始劑之熱-光聚合性樹脂層。
又，本發明提供一種上述異向性導電膜之製造方法，其具有以下之步驟(A)~(C)：步驟(A)於光聚合性樹脂層單層地配置導電粒子之步驟；步驟(B)藉由對配置有導電粒子之光聚合性樹脂層照射紫外線而進行光聚合反應，從而形成導電粒子固定於表面之第1絕緣性樹脂層的步驟；步驟(C)形成由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性 樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成之第2絕緣性樹脂層的步驟；於步驟(B)中，藉由以異向性導電膜整體之彈性模數成為0.13MPa以上之方式進行光聚合反應而形成第1絕緣性樹脂層，將步驟(C)中形成之第2絕緣性樹脂層積層於步驟(B)中形成之第1絕緣性樹脂層之導電粒子側。
又，作為上述異向性導電膜之製造方法之另一方法，提供一種具有以下步驟(A)~(D)之製造方法：步驟(A)於光聚合性樹脂層單層地配置導電粒子之步驟；步驟(B)藉由對配置有導電粒子之光聚合性樹脂層照射紫外線而進行光聚合反應，從而形成導電粒子固定於表面之第1絕緣性樹脂層的步驟；步驟(C)形成由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成之第2絕緣性樹脂層的步驟；步驟(D)係形成積層體的步驟，該積層體係於步驟(B)中形成之第1絕緣性樹脂層之導電粒子側依序積層有由晶質樹脂所形成之中間層及第2絕緣性樹脂層者。
而且，本發明提供一種利用上述異向性導電膜將第1電子零 件異向性導電連接於第2電子零件而成之連接構造體。
本發明之異向性導電膜積層有使光聚合性樹脂層進行光聚合而成之第1絕緣性樹脂層、藉由熱或光而聚合之第2絕緣性樹脂層，進而，於第1絕緣性樹脂層之第2絕緣性樹脂層側表面單層地配置有異向性導電連接用之導電粒子。因此，可利用進行了光聚合之第1絕緣性樹脂層將導電粒子牢固地固定，可防止導電粒子因異向性導電連接時之樹脂流動而沿端子面方向流動。因此，根據本發明之異向性導電膜，可實現良好之導電粒子捕捉率、導通可靠性、及較低之短路產生率。
尤其是於形成第1絕緣性樹脂層時，若於使光聚合性樹脂進行光聚合時自導電粒子側照射紫外線，則導電粒子之下方(背面側)之光聚合性樹脂會被導電粒子遮擋，因此未充分照射到紫外線。因此，被導電粒子遮擋之光聚合樹脂相對於未被遮擋之光聚合樹脂，硬化率相對變低，於異向性導電連接時導電粒子被良好地壓入，可進一步實現良好之導通可靠性、短路產生率之降低。
另一方面，於形成第1絕緣性樹脂層時，若自導電粒子之相反側、或兩面側對光聚合性樹脂照射紫外線，則可促進導電粒子之固定，在異向性導電膜之生產線確保穩定之品質。又，即便於製造異向性導電膜後捲取成捲盤、或異向導電連接時自膜之捲盤拉出之步驟中對異向性導電膜施加多餘之外部應力，外部應力亦不易對異向性導電連接前之導電粒子之排列造成影響。
又，通常，捲取成捲盤之異向性導電膜有因對異向性導電膜 施加之應力而使絕緣性樹脂層溢出之擔憂，亦有因韌性較弱(剛性較低)而不易於預壓接後修復之擔憂，但本發明之異向性導電膜由於膜整體之彈性模數為0.13MPa以上，膜具有韌性，故而可抑制絕緣性樹脂層之溢出，亦可提高預壓接後之修復性。又，藉由使膜具有韌性，即便於預壓接時固定至基板時，亦可防止膜之偏移或變形所致之導電粒子之排列混亂。
再者，於本發明之異向性導電膜中，於第2絕緣性樹脂層係由藉由熱而反應之聚合性樹脂所形成的情形時，使用該異向性導電膜之電子零件的異向性導電連接可與通常之使用異向性導電膜之連接方法同樣地進行。
另一方面，於本發明之異向性導電膜中，於第2絕緣性樹脂層係由藉由光而反應之聚合性樹脂所形成的情形時，使用該異向性導電膜之第1電子零件與第2電子零件之異向性導電連接只要進行利用連接工具之壓入直至光反應結束即可。於此情形時，為了促進樹脂流動或粒子之壓入，亦可對連接工具等進行加熱。又，於在第2絕緣性樹脂層中併用藉由熱而反應之聚合性樹脂及藉由光而反應之聚合性樹脂之情形時，亦只要與上述同樣地進行利用連接工具之壓入直至光反應結束並進行加熱即可。
又，於利用光反應將第1電子零件異向性導電連接於第2電子零件之情形時，只要從具有透光性之電子零件側進行光照射即可。
1A、1B‧‧‧異向性導電膜
2‧‧‧第1絕緣性樹脂層
2a‧‧‧第1絕緣性樹脂層之表面
2b‧‧‧第1絕緣性樹脂層之外側表面
2X‧‧‧第1絕緣性樹脂層中於第2絕緣性樹脂層側存在導電粒子之區域
2Y‧‧‧第1絕緣性樹脂層中於第2絕緣性樹脂層側不存在導電粒子之區域
3‧‧‧第2絕緣性樹脂層
4‧‧‧中間層
10‧‧‧導電粒子
20‧‧‧光聚合性樹脂層
30‧‧‧剝離膜
31‧‧‧剝離膜
圖1係本發明之第1實施例之異向性導電膜1A之剖視圖。
圖2係本發明之第2實施例之異向性導電膜1B之剖視圖。
圖3A係第1實施例之異向性導電膜之製造方法之步驟(A)的說明圖。
圖3B係第1實施例之異向性導電膜之製造方法之步驟(B)的說明圖。
圖3C係第1實施例之異向性導電膜之製造方法之步驟(B)的說明圖。
圖3D係第1實施例之異向性導電膜之製造方法之步驟(C)的說明圖。
圖3E係第1實施例之異向性導電膜之製造方法之步驟(C)之後之步驟的說明圖。
圖3F係第1實施例之異向性導電膜之製造方法之步驟(C)之後之步驟的說明圖。
圖4A係第2實施例之異向性導電膜之製造方法中之步驟(D)之方法(i)的說明圖。
圖4B係第2實施例之異向性導電膜之製造方法中之步驟(D)之方法(i)的說明圖。
圖4C係利用第2實施例之異向性導電膜之製造方法之步驟(D)之方法(i)所獲得之異向性導電膜之剖視圖。
圖5係第2實施例之異向性導電膜之製造方法中之步驟(D)之方法(ii)的說明圖。
圖6係利用第2實施例之異向性導電膜之製造方法之步驟(D)之方法(ii)所獲得之異向性導電膜之剖視圖。
以下，一面參照圖式一面對本發明之異向性導電膜之一例進行詳細說明。再者，各圖中，同一符號表示同一或同等之構成要素。又， 本發明中彈性模數係使用旋轉式流變儀(TA Instruments公司)，於30℃在扭轉方向施加固定位移(測定壓力0~5g)，測得應力隨時間之變化，且測得經過0.1min之時點之接著材料之應力(彈性模數)，算出異向性導電膜之黏度而得。
<<異向性導電膜>>
圖1係本發明之第1實施例之異向性導電膜1A之剖視圖。於該異向性導電膜1A中，第1絕緣性樹脂層2與第2絕緣性樹脂層3積層，且關於異向性導電連接用之導電粒子10，係於第1絕緣性樹脂層2之第2絕緣性樹脂層3側之表面2a單層地配置異向性導電連接用之導電粒子。
又，圖2係本發明之第2實施例之異向性導電膜1B之剖視圖。該異向性導電膜1B於第1絕緣性樹脂層2與第2絕緣性樹脂層3之間具有由晶質樹脂所形成之中間層4，該方面與第1實施例之異向性導電膜1A不同。
不論為異向性導電膜1A、1B之哪一種，異向性導電膜整體之彈性模數均為0.13MPa以上，藉此，成為具有韌性之膜。然而，於圖1之第1實施例之異向性導電膜1A中，第1絕緣性樹脂層2之彈性模數對膜之韌性之強度貢獻較大，於圖2之第2實施例之異向性導電膜1B中，中間層4之彈性模數較大地有益於膜之韌性之強度，二者於該方面不同。關於除此以外之方面，第1、第2異向性導電膜1A、1B係以同樣之方式構成。
<第1絕緣性樹脂層2>
構成本發明之異向性導電膜1A、1B之第1絕緣性樹脂層2係由光聚合樹脂所形成。例如，係使含有丙烯酸酯化合物及光自由基聚合起始劑之光 自由基聚合性樹脂層進行光自由基聚合而形成。藉由第1絕緣性樹脂層2進行光聚合，可將導電粒子10適度地固定。即，即便於異向性導電連接時對異向性導電膜1A進行加熱，第1絕緣性樹脂層2亦難以流動，因此可大幅抑制因樹脂流動導致導電粒子10無謂地流動而產生短路。
此處，於第1實施例之異向性導電膜1A中，以第1絕緣性樹脂層2之彈性模數成為0.06MPa以上之方式進行光聚合反應，藉此，異向性導電膜1A整體之彈性模數成為0.13MPa以上，而使膜具有韌性。
此種第1絕緣性樹脂層2之彈性模數之調整可藉由利用對形成第1絕緣性樹脂層2之光聚合性樹脂層之紫外線照射量或彈性體之調配等調整硬化率而進行。
又，於第1、第2實施例之異向性導電膜1A、1B中，第1絕緣性樹脂層2內之於第2絕緣性樹脂層3側存在導電性粒子10之區域2X(即，位於導電粒子10與第1絕緣性樹脂層2之外側表面2b之間的區域)之硬化率較佳為比於第2絕緣性樹脂層3側不存在導電粒子10之區域2Y之硬化率低。於第1絕緣性樹脂層2之區域2X亦可殘留未進行光硬化之丙烯酸酯化合物及光自由基聚合起始劑。藉由使異向性導電膜1A、1B具有此種區域2X，於異向性導電連接時容易排除區域2X之絕緣性樹脂，因此導電粒子10不易於第1絕緣性樹脂層2之平面方向移動，但於厚度方向被良好地壓入。因此，可提高導電粒子捕捉率，進而亦可提高導通可靠性及絕緣性。
此處，硬化率係定義為乙烯基之減少比率之數值，就導電粒子1之厚度方向之壓入性之方面而言，第1絕緣性樹脂層之區域2X之硬化 率較佳為40~80%，區域2Y之硬化率較佳為70~100%，進而，關於第1實施例之異向性導電膜1A，就將第1絕緣性樹脂層2之彈性模數設為0.06MPa以上之方面而言，較佳為將膜整體之硬化率設為75~100%。
(丙烯酸酯化合物)
作為成為丙烯酸酯單位之丙烯酸酯化合物，可使用先前公知之光聚合性丙烯酸酯。例如，可使用單官能(甲基)丙烯酸酯(此處，(甲基)丙烯酸酯包含丙烯酸酯及甲基丙烯酸酯)、二官能以上之多官能(甲基)丙烯酸酯。於本發明中，為了能於異向性導電連接時將絕緣性樹脂層熱硬化，較佳為於丙烯酸系單體之至少一部分使用多官能(甲基)丙烯酸酯。
第1絕緣性樹脂層2中之丙烯酸酯化合物之含量若過少，則有於異向性導電連接時不易賦予第1絕緣性樹脂層2與第2絕緣性樹脂層3之黏度差之傾向，若過多，則有硬化收縮較大而作業性降低之傾向，因此較佳為2~70質量%，更佳為10~50質量%。
(聚合起始劑)
作為形成第1絕緣性樹脂層所使用之光聚合起始劑，可自公知之光聚合起始劑中適當選擇而使用。例如，可列舉苯乙酮系光聚合起始劑、苯偶醯縮酮系光聚合起始劑、磷系光聚合起始劑等光自由基聚合起始劑等。
又，除光聚合起始劑以外，亦可使用熱聚合起始劑。作為熱聚合起始劑，例如可列舉有機過氧化物或偶氮系化合物等熱自由基聚合起始劑等。尤其是可較佳地使用不產生成為氣泡之原因之氮氣的有機過氧化物。
光聚合起始劑之使用量相對於丙烯酸酯化合物100質量份 若過少，則光聚合不會充分地進行，若過多則成為剛性降低之原因，因此較佳為0.1~25質量份，更佳為0.5~15質量份。
(其他樹脂及聚合起始劑)
第1絕緣性樹脂層2亦可視需要含有環氧化合物、及熱陽離子或熱陰離子聚合起始劑或者光陽離子或光陰離子聚合起始劑。藉此，可提高層間剝離強度。對於與環氧化合物一併使用之聚合起始劑，利用第2絕緣性樹脂層3進行說明。第1絕緣性樹脂層2中可視需要進而併用苯氧基樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺酯(urethane)樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等膜形成樹脂。
第1絕緣性樹脂層2之層厚若過薄則有導電粒子捕捉率降低之傾向，若過厚則有導通電阻變高之傾向，因此較佳為1.0~6.0μm，更佳為2.0~5.0μm。
第1絕緣性樹脂層2之形成可藉由如下方式進行，即，利用膜轉印法、模具轉印法、噴墨法、靜電附著法等方法使導電粒子單層地附著於含有光聚合性樹脂及光聚合起始劑的光聚合性樹脂層，且照射紫外線。於此情形時，紫外線照射較佳為自導電粒子側照射，亦可自與導電粒子相反側照射。尤其是僅自導電粒子側照射紫外線就可將第1絕緣性樹脂層之區域2X之硬化率相對於區域2Y之硬化率抑制得相對較低之方面而言較佳。
此處，光聚合可利用一個階段(即，進行一次光照射)進行，亦可利用兩個階段(即，進行兩次光照射)進行。於此情形時，第二階段之光照射較佳為於在第1絕緣性樹脂層2之單面形成第2絕緣性樹脂層3 之後，於含氧環境(大氣中)下自第1絕緣性樹脂層2之另一面側，以區域2X之硬化率低於區域2Y之硬化率之方式調整照射強度或者使用遮罩而進行。
於進行此種兩個階段之光聚合之情形時，就導電粒子10之厚度方向之壓入性之方面而言，第1絕緣性樹脂層之區域2X於第一階段之硬化率較佳為10~50%，於第二階段之硬化率較佳為40~80%，區域2Y於第一階段之硬化率較佳為30~90%，於第二階段之硬化率較佳為75~100%。
又，於進行兩個階段之光聚合之情形時，亦可僅使用1種聚合起始劑，但為了提高黏性，較佳為使用開始反應之波長頻帶不同之2種光聚合起始劑。例如，較佳為併用以來自LED光源之波長365nm之光開始自由基反應之豔佳固(IRGACURE)369(BASF JAPAN股份有限公司)、及以來自高壓水銀燈光源之光開始自由基反應之豔佳固(IRGACURE)2959(BASF JAPAN股份有限公司)。藉由如此使用2種不同之硬化劑，樹脂之結合複雜化，因此可更精細地控制異向性導電連接時之樹脂之熱流動舉動。
光聚合後之第1絕緣性樹脂層2之最低熔融黏度較佳為高於第2絕緣性樹脂層3之最低熔融黏度，具體而言，利用流變儀所測得之[第1絕緣性樹脂層2之最低熔融黏度(mPa‧s)]/[第2絕緣性樹脂層3之最低熔融黏度(mPa‧s)]之數值較佳為1~1000，更佳為4~400。再者，關於各者之較佳之最低熔融黏度，就第1絕緣性樹脂層2而言為100~100000mPa‧s，更佳為500~50000mPa‧s。就第2絕緣性樹脂層3而言較佳為0.1~10000mPa‧s，更佳為0.5~1000mPa‧s。
<導電粒子>
作為導電粒子10，可自先前公知之用於異向性導電膜者中適當選擇而使用。例如可列舉鎳、鈷、銀、銅、金、鈀等之金屬粒子、金屬被覆樹脂粒子等。亦可併用2種以上。
作為導電粒子之平均粒徑，若過小則有無法吸收配線之高度之不均而使電阻變高之傾向，過大亦有成為短路之原因之傾向，因此較佳為1~10μm，更佳為2~6μm。
此種導電粒子之第1絕緣性樹脂層2中之粒子量若過少，則粒子捕捉數降低而難以進行異向性導電連接，若過多則有短路之擔憂，因此較佳為每1平方mm為50~50000個，更佳為200~30000個。
第1絕緣性樹脂層2之厚度方向上之導電粒子10之位置較佳為如圖1、圖2所示般未埋沒至第1絕緣性樹脂層2內而沒入第2絕緣性樹脂層3。其原因在於：若導電粒子10埋沒至第1絕緣性樹脂層2，則有將電子零件進行異向性導電連接而成之連接構造體之導通電阻變高之擔憂。沒入之程度(即，自第1絕緣性樹脂層2突出之程度)就導電粒子捕捉率與導通電阻之平衡而言，較佳為導電粒子10之平均粒徑之10~90%，更佳為20~80%。
<第2絕緣性樹脂層3>
第2絕緣性樹脂層3係由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成。更具體而言，係由含有環氧化合物、及熱陽離子或熱陰離子聚合起始劑或者光陽離子或光陰離子聚合起始劑之藉由熱或光而聚合的聚合性樹脂層構成，或由含有丙烯酸酯化合物、及熱自由基或光自由基聚合起始劑 之藉由熱或光而進行自由基聚合的聚合性樹脂層構成。
(環氧化合物)
作為形成第2絕緣性樹脂層3之環氧化合物，較佳為列舉於分子內具有2個以上之環氧基之化合物或樹脂。該等可為液狀，亦可為固體狀。
(熱陽離子聚合起始劑)
作為形成第2絕緣性樹脂層3之熱陽離子聚合起始劑，可採用公知者作為環氧化合物之熱陽離子聚合起始劑，例如，可使用藉由熱而產生酸之錪鹽、鋶鹽、鏻鹽、二茂鐵類等，尤其可較佳地使用對溫度顯示出良好之潛伏性之芳香族鋶鹽。
熱陽離子聚合起始劑之調配量若過少，則有硬化不良之傾向，若過多則有製品壽命降低之傾向，因此相對於環氧化合物100質量份較佳為2~60質量份，更佳為5~40質量份。
(熱陰離子聚合起始劑)
作為形成第2絕緣性樹脂層3之熱陰離子聚合起始劑，可採用公知者作為環氧化合物之熱陰離子聚合起始劑，例如可使用藉由熱而產生鹼之脂肪族胺系化合物、芳香族胺系化合物、二級或三級胺系化合物、咪唑系化合物、聚硫醇系化合物、三氟化硼-胺錯合物、二氰二胺、有機醯肼等，尤其可較佳地使用對溫度顯示出良好之潛伏性之膠囊化咪唑系化合物。
熱陰離子聚合起始劑之調配量若過少，則有硬化不良之傾向，若過多則有製品壽命降低之傾向，因此相對於環氧化合物100質量份較佳為2~60質量份，更佳為5~40質量份。
(光陽離子聚合起始劑及光陰離子聚合起始劑)
作為環氧化合物用之光陽離子聚合起始劑或光陰離子聚合起始劑，可適當使用公知者。
(丙烯酸酯化合物)
形成第2絕緣性樹脂層3之丙烯酸酯化合物可自關於第1絕緣性樹脂層2所說明之丙烯酸酯化合物中適當選擇而使用。
(熱自由基聚合起始劑)
又，於使第2絕緣性樹脂層3含有丙烯酸酯化合物之情形時，作為與丙烯酸酯化合物一併使用之熱自由基聚合起始劑，可自關於第1絕緣性樹脂層2所說明之熱自由基聚合起始劑中適當選擇而使用。
熱自由基聚合起始劑之使用量若過少，則硬化不良，若過多則製品壽命降低，因此相對於丙烯酸酯化合物100質量份較佳為2~60質量份，更佳為5~40質量份。
(光自由基聚合起始劑)
作為丙烯酸酯化合物用之光自由基聚合起始劑，可使用公知之光自由基聚合起始劑。
光自由基聚合起始劑之使用量若過少則變得硬化不良，若過多則製品壽命降低，因此相對於丙烯酸酯化合物100質量份較佳為2~60質量份，更佳為5~40質量份。
(第2絕緣性樹脂層3之層厚)
第2絕緣性樹脂層3之層厚就異向性導電連接時之導電粒子捕捉性之方面而言，較佳為3~20μm，更佳為5~15μm。
<中間層4>
於圖2所示之第2實施例之異向性導電膜1B中，中間層4係設置於第1絕緣性樹脂層與第2絕緣性樹脂層之間之層，且由晶質樹脂所形成。
作為形成中間層4之晶質樹脂，較佳為常溫下較硬者，且較佳為使中間層4與第1絕緣性樹脂層2之積層膜的彈性模數成為0.14MPa以上。藉此，可將異向性導電膜1B整體之彈性模數設為0.13MPa以上。因此，可抑制絕緣性樹脂層之溢出，又，可提高預壓接後之修復性。
又，形成中間層4之晶質樹脂較佳為於異向性導電連接之預壓接時之熱下不熔融，而藉由施加正式壓接之熱而熔融者。藉由於正式壓接中熔融，可維持異向性導電連接之導通可靠性。進而，形成中間層4之樹脂就異向性導電膜之製造容易性之方面而言較佳為具有耐溶劑性、耐熱性。
作為形成中間層4之晶質樹脂，例如可列舉PET等聚酯、聚丙烯、聚乙烯等聚烯烴、尼龍、離子聚合物等。
中間層4之厚度就異向性導電膜之製造至異向性導電連接步驟之各種操作性之方面而言，較佳為設為整體之厚度之5~40%之範圍。
<<異向性導電膜之製造方法>>
本發明之第1實施例之異向性導電膜1A可進行以下之步驟(A)~(C)而製造。
(步驟(A))
如圖3A所示，於視需要形成於剝離膜30上之光聚合性樹脂層20單層地配置導電粒子10。作為將導電粒子10單層地配置於光聚合性樹脂層20之方法，並無特別限制，可採用日本專利第4789738號之實施例1的利用以 黏著劑固定有導電粒子之樹脂膜之雙軸延伸操作的方法、或日本特開2010-33793號公報之使用模具之方法等。再者，作為導電粒子10之配置，較佳為縱橫地以特定間隔排列。又，考慮到連接對象之尺寸、導通可靠性、絕緣性、導電粒子捕捉率等，較佳為將二維之最接近粒子間距離設為1~100μm左右。
(步驟(B))
其次，藉由對配置有導電粒子10之光聚合性樹脂層20照射紫外線(UV)而進行光聚合反應，形成導電粒子10固定於表面之第1絕緣性樹脂層2。於此情形時，較佳為如圖3B所示般自導電粒子10側照射紫外線(UV)。藉此，如圖3C所示，於第1絕緣性樹脂層2中，可使於第2絕緣性樹脂層3側存在導電性粒子10之區域2X(第1絕緣性樹脂層2之位於剝離膜30側表面2b與導電粒子10之間的區域)之第1絕緣性樹脂層的硬化率比於第2絕緣性樹脂層3側不存在導電粒子10之區域2Y的硬化率低。因此，異向導電連接時之導電粒子10之壓入變容易，且亦可抑制導電粒子10於連接平面方向之流動。
又，於該光聚合反應中，以異向性導電膜1A整體之彈性模數成為0.13MPa以上之方式調整第1絕緣性樹脂層2之硬化率。
(步驟(C))
另一方面，如圖3D所示，於剝離膜31上，藉由常規方法形成由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成之第2絕緣性樹脂層3。
其後，如圖3E所示，使步驟(C)中形成之第2絕緣性樹 脂層3與步驟(B)中形成之第1絕緣性樹脂層2之導電粒子10對向，且如圖3F所示般進行熱壓接。於此情形時，避免因熱壓接而產生過大之熱聚合。繼而，去除剝離膜30、31，藉此可獲得圖1之異向性導電膜1A。
另一方面，作為本發明之第2實施例之異向性導電膜1B之製造方法，首先，與第1實施例之異向性導電膜1A之製造方法同樣地進行步驟(A)、(B)、(C)。
其次，於步驟(D)中，如圖4C或圖6所示，形成於步驟(B)中形成之第1絕緣性樹脂層之導電粒子側依序積層有由晶質樹脂所形成之中間層及第2絕緣性樹脂層的積層體，該步驟(D)可利用以下之(i)或(ii)之方法進行。
方法(i)
於步驟(C)中形成之第2絕緣性樹脂層3之表面，如圖4A所示般積層由晶質樹脂所形成之中間層4。其次，如圖4B所示，使該積層體之中間層4與步驟(B)中固定有導電粒子10之第1絕緣性樹脂層2之導電粒子10側的表面對向，且如圖4C所示，將該等熱壓接。繼而，去除剝離膜30、31，藉此可獲得圖2之異向性導電膜1B。
方法(ii)
於步驟(B)中固定有導電粒子10之第1絕緣性樹脂層2之導電粒子10側之表面，如圖5所示般積層由晶質樹脂所形成之中間層4，於其上使步驟(C)中形成之第2絕緣性樹脂層3與之對向，且如圖6所示般將該等熱壓接而積層。繼而，去除剝離膜30、31，藉此可獲得圖2之異向性導電膜1B。
再者，於圖5及圖6中，導電粒子10自第1絕緣性樹脂層2之突出量少於圖2所示之異向性導電膜1B，該情況表示於本發明中，導電粒子10自第1絕緣性樹脂層2之突出量有各種變化。
<<連接構造體>>
本發明之異向性導電膜1A、1B可於將IC晶片、IC模組等第1電子零件與軟性基板、玻璃基板等第2電子零件進行異向性導電連接時較佳地應用。以此方式獲得之連接構造體亦為本發明之一部分。再者，就提高導通可靠性之方面而言，較佳為將異向性導電膜之第1絕緣性樹脂層2側配置於軟性基板等第2電子零件側，且將第2絕緣性樹脂層3側配置於IC晶片等第1電子零件側。
實施例
以下，藉由實施例對本發明進行具體說明。
實施例1~6、比較例1
根據日本專利第4789738號之實施例1之操作將導電粒子單層地排列，且改變第1絕緣性樹脂層之彈性模數、或中間層之彈性模數而製作積層依照表1所示之組成(質量份)而形成之第1絕緣性樹脂層、中間層、及第2絕緣性樹脂層而成的異向性導電膜。
具體而言，首先，將丙烯酸酯化合物及光自由基聚合起始劑等利用乙酸乙酯或甲苯以固形物成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為3μm之方式塗佈於厚度50μm之聚對苯二甲酸乙二酯膜，且於80℃之烘箱中乾燥5分鐘，藉此形成作為第1絕緣性樹脂層之前驅層之光自由基聚合性樹脂層。
其次，於所獲得之光自由基聚合性樹脂層之表面，使平均粒徑4μm之導電粒子(鍍Ni/Au樹脂粒子，AUL704，積水化學工業股份有限公司)以導電粒子間之最接近距離成為4μm之方式單層地排列成格子狀。進而，藉由自該導電粒子側對光自由基聚合性樹脂層照射波長365nm、累計光量4000mJ/cm2之紫外線，而形成導電粒子固定於表面之第1絕緣性樹脂層。於此情形時，藉由改變紫外線之照射量，而如表1所示般改變第1絕緣性樹脂層之彈性模數。
又，為了形成第2絕緣性樹脂層，將熱硬化性樹脂及聚合起始劑等利用乙酸乙酯或甲苯以固形物成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為12μm之方式塗佈於厚度50μm之聚對苯二甲酸乙二酯膜，且於80℃之烘箱中乾燥5分鐘，藉此形成第2絕緣性樹脂層。
另一方面，作為中間層，對熔點不同之3種晶質樹脂(Japan Polyethylene股份有限公司製造之NOVATEC EVA LV211A(mp.100℃)、NOVATEC HD HF560(mp.130℃)、Prime Polymer公司製造之Prime Polypro F329RA(mp.160℃))以成為厚度5μm之膜之方式進行延伸處理而進行準備。
藉由將以此方式獲得之固定有導電粒子之第1絕緣性樹脂層、晶質聚酯膜中間層與第2絕緣性樹脂層以導電粒子成為內側之方式進行層壓而獲得實施例1~6及比較例1之異向性導電膜。此時，於實施例1及比較例1中未設置中間層。
實施例7
自導電粒子側、及與導電粒子相反側分別以累計光量2000mJ/cm2進行對光自由基聚合性樹脂層之紫外線照射，除此以外以與實施例2相同之方式獲得異向性導電膜。
評價
對於各實施例及比較例之異向性導電膜以下述方式對(a)異向性導電膜整體之彈性模數、(b)第1絕緣性樹脂層之彈性模數、(c)第1絕緣性樹脂層與中間層之積層體之彈性模數、(d)異向性導電膜之預壓接修復性、(e)使用異向性導電膜進行異向性導電連接而成之連接構造體樣品之構裝粒子捕捉率、(f)該連接構造體樣品之初始導通性進行評價或測定。將結果示於表1。
(a)(b)(c)之彈性模數
使用旋轉式流變儀(TA Instruments公司)，於30℃在扭轉方向施加固定位移(測定壓力0~5g)，測得應力隨時間之變化，求出經過0.1min之時點之膜之應力(彈性模數)。
(d)預壓接修復性
對膜之壓接性之評價用玻璃(整個表面塗佈ITO，玻璃厚度0.7mm)進行各異向性導電膜之預壓接。於此情形時，藉由工具寬度1.5mm之預壓接機，使用150μm厚之鐵氟龍(註冊商標)作為緩衝材料，於70℃、1MPa、2秒之條件下將切割成1.5mm寬度之異向性導電膜之第1絕緣性樹脂層預壓接至評價用玻璃。
其後，藉由自評價用玻璃於90°方向機械地拉拽異向性導電膜而將其剝離，將異向性導電膜於剝離中途斷裂導致樹脂殘留於評價用玻璃之表面之 狀態評價為NG，將異向性導電膜未斷裂，可剝離異向性導電膜整體之情形評價為OK。
(e)構裝粒子捕捉率
使用各異向性導電膜，將0.5×1.8×20.0mm大小之IC晶片(凸塊尺寸30×85μm，凸塊高度15μm，凸塊間距50μm)於180℃、80MPa、5秒之條件下構裝於0.5×50×30mm大小之Corning公司製造之玻璃配線基板(1737F)而獲得連接構造體樣品。
「構裝粒子捕捉率」
藉由以下之式求出[於加熱、加壓後之連接構造體樣品之凸塊上實際捕捉到之導電粒子之個數]相對於[存在於加熱、加壓前之連接構造體樣品之凸塊上之導電粒子之個數]的比率(%)，作為構裝粒子捕捉率。
再者，存在於加熱加壓前之連接構造體樣品之凸塊上之導電粒子之個數係根據加熱、加壓前之ACF之導電粒子之個數密度及凸塊面積而算出，存在於加熱加壓後之連接構造體樣品之凸塊上之導電粒子之個數係藉由光學顯微鏡之觀察而求出。
於實際使用中，較佳為50%以上。
構裝粒子捕捉率(%)={[加熱加壓後之凸塊上之導電粒子數]/[加熱加壓前之凸塊上之導電粒子數]}×100
(f)初始導通性
測定連接構造體樣品之導通電阻。
由表1可知，各實施例及比較例之異向性導電膜之厚度完全相同。實施例1~6之異向性導電膜之膜整體之彈性模數處於0.13~0.25MPa之範圍，均表現出良好之預壓接修復性。其中，實施例2~4之異向性導電膜之第1絕緣性樹脂層之彈性模數相同，但中間層之彈性模數不同，實施例5之異向性導電膜之第1絕緣性樹脂層之彈性模數相對較低，但中間層之彈性模數較高，實施例6之異向性導電膜因第1絕緣性樹脂層之彈性模數較高而膜整體之彈性模數變高。
實施例7之構裝粒子捕捉率相對於實施例2稍差，但於實際使用中不存在問題，關於膜整體之彈性模數、預壓接修復性、初始導通性，與實施例2同樣地顯示出較佳之結果。
相對於此，比較例1之異向性導電膜因膜整體之彈性模數較低而預壓接修復性較差。
再者，於各實施例及比較例之異向性導電膜中，構裝捕捉率及初始導通性良好。
[產業上之可利用性]
本發明之異向性導電膜積層有使光自由基聚合性樹脂層進行光自由基聚合而成之第1絕緣性樹脂層、及由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成之第2絕緣性樹脂層，且於第1絕緣性樹脂層之第2絕緣性樹脂層側表面單層地配置有導電粒子，因此表現出由良好之導電粒子捕捉率產生之優異之初始導通性、導通可靠性、較低之短路產生率。進而，藉由調整異向性導電膜整體之彈性模數而成為韌性較強之膜，因此不 易產生絕緣性樹脂層溢出、於異向性導電連接之預壓接時位置偏移、或者於預壓接後不易修復之問題。由此，本發明之異向性導電膜於IC晶片等電子零件對配線基板之異向性導電連接中有用。電子零件之配線正在發展窄小化，本發明於將窄小化之電子零件進行異向性導電連接之情形時尤為有用。
1A‧‧‧異向性導電膜
2‧‧‧第1絕緣性樹脂層
2a‧‧‧第1絕緣性樹脂層之表面
2b‧‧‧第1絕緣性樹脂層之外側表面
2X‧‧‧第1絕緣性樹脂層中於第2絕緣性樹脂層側存在導電粒子之區域
2Y‧‧‧第1絕緣性樹脂層中於第2絕緣性樹脂層側不存在導電粒子之區域
3‧‧‧第2絕緣性樹脂層
10‧‧‧導電粒子

Claims (11)

  1. 一種異向性導電膜，其積層有第1絕緣性樹脂層及第2絕緣性樹脂層，第1絕緣性樹脂層由光聚合樹脂所形成，第2絕緣性樹脂層由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子重含性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成，於第1絕緣性樹脂層之第2絕緣性樹脂層側表面單層地配置有異向性導電連接用之導電粒子，異向性導電膜整體之彈性模數為0.13MPa以上。
  2. 如申請專利範圍第1項之異向性導電膜，其中，第1絕緣性樹脂層之彈性模數為0.06MPa以上。
  3. 如申請專利範圍第1項之異向性導電膜，其於第1絕緣性樹脂層與第2絕緣性樹脂層之間具有由晶質樹脂所形成之中間層。
  4. 如申請專利範圍第1或2項之異向性導電膜，其中，第1絕緣性樹脂層與中間層之積層膜的彈性模數為0.14MPa以上。
  5. 一種申請專利範圍第1項之異向性導電膜之製造方法，其具有以下之步驟(A)~(C)：步驟(A)於光聚合性樹脂層單層地配置導電粒子之步驟；步驟(B)藉由對配置有導電粒子之光聚合性樹脂層照射紫外線而進行光聚合反應，從而形成導電粒子固定於表面之第1絕緣性樹脂層的步驟； 步驟(C)形成由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成之第2絕緣性樹脂層的步驟；於步驟(B)中，藉由以異向性導電膜整體之彈性模數成為0.13MPa以上之方式進行光聚合反應而形成第1絕緣性樹脂層，將步驟(C)中形成之第2絕緣性樹脂層積層於步驟(B)中形成之第1絕緣性樹脂層之導電粒子側。
  6. 如申請專利範圍第5項之異向性導電膜之製造方法，其中，於步驟(B)中，自導電粒子側對光聚合性樹脂層照射紫外線。
  7. 一種申請專利範圍第1項之異向性導電膜之製造方法，其具有以下之步驟(A)~(D)：步驟(A)於光聚合性樹脂層單層地配置導電粒子之步驟；步驟(B)藉由對配置有導電粒子之光聚合性樹脂層照射紫外線而進行光聚合反應，從而形成導電粒子固定於表面之第1絕緣性樹脂層的步驟；步驟(C)形成由熱陽離子或熱陰離子聚合性樹脂、光陽離子或光陰離子聚合性樹脂、熱自由基聚合性樹脂、或光自由基聚合性樹脂所形成之第2絕緣性樹脂層的步驟；步驟(D) 係形成積層體的步驟，該積層體係於步驟(B)中所形成之第1絕緣性樹脂層之導電粒子側依序積層有由晶質樹脂所形成之中間層及第2絕緣性樹脂層者。
  8. 如申請專利範圍第7項之製造方法，其中，利用步驟(C)形成第2絕緣性樹脂層之後，藉由下述方式進行步驟(D)：於該第2絕緣性樹脂層積層由晶質樹脂所形成之中間層而成為積層體，且將該積層體與步驟(B)中形成之第1絕緣性樹脂層積層。
  9. 如申請專利範圍第7項之製造方法，其中，藉由下述方式進行步驟(D)：於在步驟(B)中形成之第1絕緣性樹脂層之導電粒子側，依序積層由晶質樹脂所形成之中間層及步驟(C)中形成之第2絕緣性樹脂層。
  10. 如申請專利範圍第7至9項中任一項之異向性導電膜之製造方法，其中，於步驟(B)中，自導電粒子側對光聚合性樹脂層照射紫外線。
  11. 一種連接構造體，其係利用申請專利範圍第1至4項中任一項之異向性導電膜將第1電子零件異向性導電連接於第2電子零件而成。
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JP4880533B2 (ja) * 2007-07-03 2012-02-22 ソニーケミカル＆インフォメーションデバイス株式会社 異方性導電膜及びその製造方法、並びに接合体
JP2010033793A (ja) 2008-07-28 2010-02-12 Tokai Rubber Ind Ltd 粒子転写膜の製造方法
JP5066231B2 (ja) * 2010-07-28 2012-11-07 日東電工株式会社 フリップチップ型半導体裏面用フィルム、短冊状半導体裏面用フィルムの製造方法、及び、フリップチップ型半導体装置
JP5953131B2 (ja) 2011-06-10 2016-07-20 積水化学工業株式会社 異方性導電材料、接続構造体及び接続構造体の製造方法
US9102851B2 (en) * 2011-09-15 2015-08-11 Trillion Science, Inc. Microcavity carrier belt and method of manufacture
JP2013105636A (ja) * 2011-11-14 2013-05-30 Dexerials Corp 異方性導電フィルム、接続方法、及び接合体
JP2013149466A (ja) * 2012-01-19 2013-08-01 Sekisui Chem Co Ltd 異方性導電材料、接続構造体及び接続構造体の製造方法

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JP2015149128A (ja) 2015-08-20
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