CN105870308A - 一种无机封装直插式紫光led及其制造方法 - Google Patents

一种无机封装直插式紫光led及其制造方法 Download PDF

Info

Publication number
CN105870308A
CN105870308A CN201610294263.7A CN201610294263A CN105870308A CN 105870308 A CN105870308 A CN 105870308A CN 201610294263 A CN201610294263 A CN 201610294263A CN 105870308 A CN105870308 A CN 105870308A
Authority
CN
China
Prior art keywords
metal
ceramic
glass
metal base
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610294263.7A
Other languages
English (en)
Other versions
CN105870308B (zh
Inventor
邱凡
郭仕锦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Danse Electronic Technology Co Ltd
Original Assignee
Zhejiang Danse Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Danse Electronic Technology Co Ltd filed Critical Zhejiang Danse Electronic Technology Co Ltd
Priority to CN201610294263.7A priority Critical patent/CN105870308B/zh
Publication of CN105870308A publication Critical patent/CN105870308A/zh
Application granted granted Critical
Publication of CN105870308B publication Critical patent/CN105870308B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种无机封装直插式紫光LED及其制造方法,包括一金属陶瓷底座,所述金属陶瓷底座的上部部件为金属部件,下部部件为陶瓷部件,所述金属部件的上表面中心设置有一向内凹陷的凹槽,所述凹槽的内底部上设置有一层固晶胶,所述固晶胶上固定有一紫光芯片,所述金属陶瓷底座上扣合有一玻璃金属帽,所述玻璃金属帽进一步包括一两端通口的金属管以及嵌设于所述金属管上端口中的玻璃盖。本发明通过玻璃、金属、陶瓷等无机材料替换环氧树脂、硅胶等有机材料作为紫光LED封装材料,其大大提升了对紫光LED芯片的密封保护,并有效扩大紫光LED在特殊环境下的应用范围,还提高了紫光LED散热性能,提升了紫光LED的抗老化能力。

Description

一种无机封装直插式紫光LED及其制造方法
技术领域
本发明涉及LED生产技术领域,更具体地说是一种无机封装直插式紫光LED及其制造方法。
背景技术
现有技术中,直插式紫光LED的封装多采用环氧树脂、硅胶等有机材料对芯片进行密封保护,这些无机材料透明性极好,封装便利,能提高出光效率,并在多领域中广泛应用。
然遇上使用环境恶劣,如高温、化学品挥发腐蚀、光通信及需要尘埃防护、易磨损等应用领域,有机材料封装的紫光LED则无法满足要求,且容易失效,甚至死灯。
发明内容
本发明的目的在于克服现有技术以上缺陷,提供一种密封保护好,有效扩大紫光LED在特殊环境下的应用范围,提高紫光LED散热性能,抗老化能力强的无机封装直插式紫光LED及其制造方法。
为了达到以上目的,本发明是通过以下技术方案实现的:一种无机封装直插式紫光LED,其特征在于,包括一金属陶瓷底座,所述金属陶瓷底座的上部部件为金属部件,下部部件为陶瓷部件,所述金属部件的上表面中心设置有一向内凹陷的凹槽,所述凹槽的内底部上设置有一层固晶胶,所述固晶胶上固定有一紫光芯片,所述固晶胶的高度为所述紫光芯片高度的1/3~1/2,所述金属陶瓷底座中贯穿有一对供电极,这对所述供电极各通过一根键合金丝与所述紫光芯片相连接,所述金属陶瓷底座上扣合有一玻璃金属帽,所述玻璃金属帽进一步包括一两端通口的金属管以及嵌设于所述金属管上端口中的玻璃盖,所述玻璃盖即为一圆台形的凸透镜片。
作为优选,所述金属陶瓷底座的金属部件下端沿以及所述玻璃金属帽的金属管下端沿均设置有向水平方向伸出的翻边,所述金属部件下端沿的翻边与所述金属管下端沿的翻边上下相叠置,所述金属陶瓷底座的陶瓷部件上端面中设置有收纳所述金属部件下端沿的翻边以及所述金属管下端沿的翻边的嵌槽。
作为优选,所述金属陶瓷底座中金属部件以及所述玻璃金属帽中金属管的金属材质均为铜,所述金属陶瓷底座中陶瓷部件为纳米陶瓷,所述玻璃金属帽中玻璃盖为高硼硅石英玻璃。
一种无机封装直插式紫光LED的制造方法,其特征在于,步骤如下:
(1)将固晶胶置于固晶机上进行固晶作业,固定住紫光芯片,固晶胶的高度为紫光芯片高度的1/3~1/2;
(2)将固定好紫光芯片的金属陶瓷底座放入烤箱中进行烘烤,烘烤分为两个阶段,第一阶段烘烤温度为100℃,时间为60分钟,使固晶胶中的反应抑制剂挥发,第二阶段烘烤温度为150℃,时间为120分钟,使固晶胶固化;
(3)将固晶胶固化后的金属陶瓷底座置于LED焊线机上进行焊线作业,一对供电极贯穿金属陶瓷底座后,各通过一根键合金丝与紫光芯片相连接形成回路;
(4)将玻璃金属帽盖在金属陶瓷底座上,并利用储能封焊工艺中的压力电阻焊原理,实现玻璃金属帽的翻边与金属陶瓷底座的翻边构成无缝焊接,从而实现LED器件非直接性高温加热快速无机材料气密封装。
有益效果:本发明通过玻璃、金属、陶瓷等无机材料替换环氧树脂、硅胶等有机材料作为紫光LED封装材料,其大大提升了对紫光LED芯片的密封保护,并有效扩大紫光LED在特殊环境下的应用范围,还提高了紫光LED散热性能,提升了紫光LED的抗老化能力。
附图说明
图1为本发明的结构示意图;
图2为图1中A部分的结构放大图。
图中:1-陶瓷部件,2-金属部件,3-凹槽,4-固晶胶,5-紫光芯片,6-键合金丝,7-供电极,8-金属管,9-玻璃盖,10-翻边,11-嵌槽。
具体实施方式
为了使本发明的技术手段、创作特征与达成目的易于明白理解,以下结合具体实施例进一步阐述本发明。
实施例:如图1和图2所示,一种无机封装直插式紫光LED,包括一金属陶瓷底座,金属陶瓷底座的上部部件为金属部件2,下部部件为陶瓷部件1,金属部件2的上表面中心设置有一向内凹陷的凹槽3,凹槽3的内底部上设置有一层固晶胶4,固晶胶4上固定有一紫光芯片5,固晶胶4的高度为紫光芯片5高度的1/3~1/2,金属陶瓷底座中贯穿有一对供电极7,这对供电极7各通过一根键合金丝6与紫光芯片5相连接,金属陶瓷底座上扣合有一玻璃金属帽,玻璃金属帽进一步包括一两端通口的金属管8以及嵌设于金属管8上端口中的玻璃盖9,玻璃盖9即为一圆台形的凸透镜片。
金属陶瓷底座的金属部件2下端沿以及玻璃金属帽的金属管8下端沿均设置有向水平方向伸出的翻边10,金属部件2下端沿的翻边与金属管8下端沿的翻边上下相叠置,金属陶瓷底座的陶瓷部件1上端面中设置有收纳金属部件2下端沿的翻边以及金属管8下端沿的翻边10的嵌槽11。
金属陶瓷底座中金属部件2以及玻璃金属帽中金属管8的金属材质均为铜,金属陶瓷底座中陶瓷部件1为纳米陶瓷,玻璃金属帽中玻璃盖9为高硼硅石英玻璃。
一种无机封装直插式紫光LED的制造方法,其特征在于,步骤如下:
(1)将固晶胶置于固晶机上进行固晶作业,固定住紫光芯片,固晶胶的高度为紫光芯片高度的1/3~1/2;
(2)将固定好紫光芯片的金属陶瓷底座放入烤箱中进行烘烤,烘烤分为两个阶段,第一阶段烘烤温度为100℃,时间为60分钟,使固晶胶中的反应抑制剂挥发,第二阶段烘烤温度为150℃,时间为120分钟,使固晶胶固化;
(3)将固晶胶固化后的金属陶瓷底座置于LED焊线机上进行焊线作业,一对供电极贯穿金属陶瓷底座后,各通过一根键合金丝与紫光芯片相连接形成回路;
(4)将玻璃金属帽盖在金属陶瓷底座上,并利用储能封焊工艺中的压力电阻焊原理,实现玻璃金属帽的翻边与金属陶瓷底座的翻边构成无缝焊接,从而实现LED器件非直接性高温加热快速无机材料气密封装。
使用:本发明通过玻璃、金属、陶瓷等无机材料替换环氧树脂、硅胶等有机材料作为紫光LED封装材料,其大大提升了对紫光LED芯片的密封保护,并有效扩大紫光LED在特殊环境下的应用范围,还提高了紫光LED散热性能,提升了紫光LED的抗老化能力。

Claims (4)

1.一种无机封装直插式紫光LED,其特征在于,包括一金属陶瓷底座,所述金属陶瓷底座的上部部件为金属部件,下部部件为陶瓷部件,所述金属部件的上表面中心设置有一向内凹陷的凹槽,所述凹槽的内底部上设置有一层固晶胶,所述固晶胶上固定有一紫光芯片,所述固晶胶的高度为所述紫光芯片高度的1/3~1/2,所述金属陶瓷底座中贯穿有一对供电极,这对所述供电极各通过一根键合金丝与所述紫光芯片相连接,所述金属陶瓷底座上扣合有一玻璃金属帽,所述玻璃金属帽进一步包括一两端通口的金属管以及嵌设于所述金属管上端口中的玻璃盖,所述玻璃盖即为一圆台形的凸透镜片。
2.根据权利要求1所述的无机封装直插式紫光LED,其特征在于,所述金属陶瓷底座的金属部件下端沿以及所述玻璃金属帽的金属管下端沿均设置有向水平方向伸出的翻边,所述金属部件下端沿的翻边与所述金属管下端沿的翻边上下相叠置,所述金属陶瓷底座的陶瓷部件上端面中设置有收纳所述金属部件下端沿的翻边以及所述金属管下端沿的翻边的嵌槽。
3.根据权利要求1或2所述的无机封装直插式紫光LED,其特征在于,所述金属陶瓷底座中金属部件以及所述玻璃金属帽中金属管的金属材质均为铜,所述金属陶瓷底座中陶瓷部件为纳米陶瓷,所述玻璃金属帽中玻璃盖为高硼硅石英玻璃。
4.一种根据权利要求1-3任意一项所述无机封装直插式紫光LED的制造方法,其特征在于,步骤如下:
(1)将固晶胶置于固晶机上进行固晶作业,固定住紫光芯片,固晶胶的高度为紫光芯片高度的1/3~1/2;
(2)将固定好紫光芯片的金属陶瓷底座放入烤箱中进行烘烤,烘烤分为两个阶段,第一阶段烘烤温度为100℃,时间为60分钟,使固晶胶中的反应抑制剂挥发,第二阶段烘烤温度为150℃,时间为120分钟,使固晶胶固化;
(3)将固晶胶固化后的金属陶瓷底座置于LED焊线机上进行焊线作业,一对供电极贯穿金属陶瓷底座后,各通过一根键合金丝与紫光芯片相连接形成回路;
(4)将玻璃金属帽盖在金属陶瓷底座上,并利用储能封焊工艺中的压力电阻焊原理,实现玻璃金属帽的翻边与金属陶瓷底座的翻边构成无缝焊接,从而实现LED器件非直接性高温加热快速无机材料气密封装。
CN201610294263.7A 2016-04-30 2016-04-30 一种无机封装直插式紫光led及其制造方法 Active CN105870308B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610294263.7A CN105870308B (zh) 2016-04-30 2016-04-30 一种无机封装直插式紫光led及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610294263.7A CN105870308B (zh) 2016-04-30 2016-04-30 一种无机封装直插式紫光led及其制造方法

Publications (2)

Publication Number Publication Date
CN105870308A true CN105870308A (zh) 2016-08-17
CN105870308B CN105870308B (zh) 2019-11-05

Family

ID=56630321

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610294263.7A Active CN105870308B (zh) 2016-04-30 2016-04-30 一种无机封装直插式紫光led及其制造方法

Country Status (1)

Country Link
CN (1) CN105870308B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108305927A (zh) * 2018-03-16 2018-07-20 江苏鸿利国泽光电科技有限公司 一种无机封装直插式深紫外led

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213189A (ja) * 1983-05-18 1984-12-03 Hitachi Ltd 半導体装置
US4940855A (en) * 1987-09-23 1990-07-10 Siemens Aktiengesellschaft Hermetically tight glass-metal housing for semiconductor components and method for producing same
JP2003163382A (ja) * 2001-11-29 2003-06-06 Matsushita Electric Ind Co Ltd 受光素子または発光素子用パッケージ
CN201562689U (zh) * 2009-03-24 2010-08-25 韩肥方 陶瓷底座环氧封装红外发射光敏接收光电器件
CN201570514U (zh) * 2009-11-06 2010-09-01 长春半导体有限公司 小型金属玻璃光窗发光二极管
CN201590434U (zh) * 2009-12-23 2010-09-22 北京瑞普北光电子有限公司 半导体红外发光二极管
CN102983245A (zh) * 2011-09-06 2013-03-20 青岛杰生电气有限公司 一种紫外发光二极管的封装结构
CN103972378A (zh) * 2014-05-29 2014-08-06 中山市秉一电子科技有限公司 一种led发光装置及其封装方法
CN104485397A (zh) * 2014-11-17 2015-04-01 南京航空航天大学 一种高导热、高出光率led用陶瓷和镜面铝复合基板及制备工艺
CN204289510U (zh) * 2014-11-25 2015-04-22 长兴恒瑞光电有限公司 一种新型二极管封装结构
CN205564810U (zh) * 2016-04-30 2016-09-07 浙江单色电子科技有限公司 一种无机封装直插式紫光led

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213189A (ja) * 1983-05-18 1984-12-03 Hitachi Ltd 半導体装置
US4940855A (en) * 1987-09-23 1990-07-10 Siemens Aktiengesellschaft Hermetically tight glass-metal housing for semiconductor components and method for producing same
JP2003163382A (ja) * 2001-11-29 2003-06-06 Matsushita Electric Ind Co Ltd 受光素子または発光素子用パッケージ
CN201562689U (zh) * 2009-03-24 2010-08-25 韩肥方 陶瓷底座环氧封装红外发射光敏接收光电器件
CN201570514U (zh) * 2009-11-06 2010-09-01 长春半导体有限公司 小型金属玻璃光窗发光二极管
CN201590434U (zh) * 2009-12-23 2010-09-22 北京瑞普北光电子有限公司 半导体红外发光二极管
CN102983245A (zh) * 2011-09-06 2013-03-20 青岛杰生电气有限公司 一种紫外发光二极管的封装结构
CN103972378A (zh) * 2014-05-29 2014-08-06 中山市秉一电子科技有限公司 一种led发光装置及其封装方法
CN104485397A (zh) * 2014-11-17 2015-04-01 南京航空航天大学 一种高导热、高出光率led用陶瓷和镜面铝复合基板及制备工艺
CN204289510U (zh) * 2014-11-25 2015-04-22 长兴恒瑞光电有限公司 一种新型二极管封装结构
CN205564810U (zh) * 2016-04-30 2016-09-07 浙江单色电子科技有限公司 一种无机封装直插式紫光led

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108305927A (zh) * 2018-03-16 2018-07-20 江苏鸿利国泽光电科技有限公司 一种无机封装直插式深紫外led

Also Published As

Publication number Publication date
CN105870308B (zh) 2019-11-05

Similar Documents

Publication Publication Date Title
US8558367B2 (en) Semiconductor module
CN204011471U (zh) 一种深紫外led器件封装结构
CN202585523U (zh) 半导体发光装置的光学组件与封装结构
TWI727672B (zh) 導線架、封裝體及發光裝置
CN106461169A (zh) 安装在弯曲引线框架上的led
CN101937962A (zh) 一种led封装结构及其封装方法
CN103700635A (zh) 一种带腔体的芯片封装结构及其封装方法
CN106784243A (zh) 一种深紫外led封装器件及其制备方法
CN205564810U (zh) 一种无机封装直插式紫光led
CN102569563B (zh) 透镜焦点可调的发光二极管的圆片级封装方法
TWM505698U (zh) 塑封預模內空封裝之結構改良
CN105870308A (zh) 一种无机封装直插式紫光led及其制造方法
CN207183260U (zh) 一种组合封装结构
CN104143600B (zh) 一种密封led灯及其制作方法
CN106887505B (zh) 一种单面发光芯片级led的制作方法
CN106356437A (zh) 一种白光led封装器件及其制备方法
CN104810240B (zh) 一种to型封装器件的解封方法
TWI424549B (zh) 改良導線的二極體封裝及其製作方法
CN202297105U (zh) 微机电系统mems器件的方形扁平无引脚封装qfn结构
CN104810462A (zh) 一种中大功率led驱动芯片的esop8引线框架
CN105720165B (zh) 一种白光led芯片的制作方法
CN208764685U (zh) 玻璃全泡led灯
CN207503960U (zh) 一次封装成型的增强散热的封装结构
CN101894897A (zh) 发光二极管的高性能玻璃封装方法
CN203932107U (zh) 一种led封装封胶加热结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant