CN105811819A - MOS (Metal Oxide Semiconductor) tube drive circuit used for motor control - Google Patents
MOS (Metal Oxide Semiconductor) tube drive circuit used for motor control Download PDFInfo
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- CN105811819A CN105811819A CN201610252039.1A CN201610252039A CN105811819A CN 105811819 A CN105811819 A CN 105811819A CN 201610252039 A CN201610252039 A CN 201610252039A CN 105811819 A CN105811819 A CN 105811819A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/28—Arrangements for controlling current
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Abstract
The invention discloses an MOS (Metal Oxide Semiconductor) tube drive circuit used for motor control. The MOS tube drive circuit comprises an upper MOS tube drive circuit and a lower MOS tube drive circuit which are mutually connected, wherein the output end of the upper MOS tube drive circuit is connected to the output end of the lower MOS tube drive circuit to be taken as a total output end; and the other end of the lower MOS tube drive circuit is connected to a sampling end of a current sampling circuit. The circuit structure solves the problems of over-high loss and small drive current power which are caused by overlarge gate drive current of a switch MOS tube of the MOS tube drive circuit of the existing motor and has the characteristics of simple structure, stable performance, lower cost and high accuracy.
Description
Technical field
The present invention relates to a kind of motor control drive circuit, particularly to a kind of motor control metal-oxide-semiconductor drive circuit.
Background technology
Motor has been successfully applied to multiple fields such as military affairs, aviation, computer, Digit Control Machine Tool, robot and electric bicycle.For the metal-oxide-semiconductor drive circuit of existing motor, its control strategy adopted there will be that switch metal-oxide-semiconductor gate drive current is excessive causes loss too high and the defect such as drive circuit power is less than normal more, haves much room for improvement.
Summary of the invention
The purpose of the present invention, it is in that to provide a kind of motor control metal-oxide-semiconductor drive circuit, it can solve, and existing motor metal-oxide-semiconductor drive circuit switch metal-oxide-semiconductor gate drive current is excessive to be caused loss too high and drives the problems such as current power is less than normal, has simple in construction, stable performance, the feature that less costly and accuracy is high.
In order to reach above-mentioned purpose, the solution of the present invention is:
A kind of motor controls to use metal-oxide-semiconductor drive circuit, including interconnective upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit, the outfan of described upper metal-oxide-semiconductor drive circuit is connected and as total outfan with the outfan of lower metal-oxide-semiconductor drive circuit, and the other end of described lower MOS drive circuit connects the sampling end of current sampling circuit.
Further, described upper metal-oxide-semiconductor drive circuit includes the first to the tenth resistance, the first diode, the first to the 6th audion, the first to the second electric capacity and the first to the second metal-oxide-semiconductor, wherein ,+15V voltage signal and the anode of the first diode, one end of the first resistance, the first audion emitter stage be connected；null+ 3.3V voltage signal and second resistance one end are connected，The other end of the second resistance and the base stage of the second audion are connected，The emitter stage of the second audion and one end of the 4th resistance are connected，The PWMA+ control signal of another described motor of termination of the 4th resistance，The colelctor electrode of the second audion and one end of the 3rd resistance、The base stage of the 3rd audion is connected，The other end of the 3rd resistance and the negative electrode of the first diode、The emitter stage of the 3rd audion、The colelctor electrode of the 4th audion、One end of 8th resistance、One end of first electric capacity is connected，The colelctor electrode of the 3rd audion and the base stage of the 4th audion、The base stage of the 5th audion、One end of 5th resistance is connected，The emitter stage of the 4th audion and one end of the 6th resistance are connected，The other end of the 6th resistance and one end of the 7th resistance、The emitter stage of the 6th audion、One end of second electric capacity、One end of 9th resistance、One end of tenth resistance is connected，The other end of the 9th resistance and the grid of the first metal-oxide-semiconductor are connected，The other end of the tenth resistance and the grid of the second metal-oxide-semiconductor are connected，The emitter stage of the 5th audion and the other end of the 7th resistance、The base stage of the 6th audion is connected，The colelctor electrode of the 5th audion and the other end of the 5th resistance、The colelctor electrode of the 6th audion、The other end of the 8th resistance、The other end of the first electric capacity、The other end of the second electric capacity、The source electrode of the first metal-oxide-semiconductor、The source electrode of the second metal-oxide-semiconductor、Total outfan is connected，The source electrode of described first metal-oxide-semiconductor、The connected point of the source electrode of the second metal-oxide-semiconductor is the outfan of described upper metal-oxide-semiconductor drive circuit.
Further, the model that described first electric capacity adopts is 50V/47 μ F.
Further, the drain electrode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor drain electrode be jointly connected with+48V voltage signal.
Further, described lower metal-oxide-semiconductor drive circuit includes the 11st to the 17th resistance, the 7th to the tenth audion, the 3rd to the 5th electric capacity and the 3rd to the 4th metal-oxide-semiconductor, wherein, + 3.3V voltage signal and the base stage of the 7th audion, one end of the 3rd electric capacity, the 4th electric capacity one end be connected, the other end of the 3rd electric capacity and the other end common ground of the 4th electric capacity, the base stage of the colelctor electrode of the 7th audion and the other end of the first resistance, the first audion is connected, and the emitter stage of the 7th audion and one end of the 11st resistance are connected；The other end of the 11st resistance is connected with the PWMA-control signal of described motor, the colelctor electrode of the 8th audion and the emitter stage of the first audion, + 15V voltage signal, the anode of the first diode is connected, the base stage of the 8th audion and the colelctor electrode of the first audion, the base stage of the 9th audion, one end of 14th resistance is connected, the emitter stage of the 8th audion and one end of the 12nd resistance are connected, the other end of the 12nd resistance and one end of the 13rd resistance, the emitter stage of the tenth audion, one end of 5th electric capacity, one end of 16th resistance, one end of 17th resistance is connected；The base stage of the other end of the 13rd resistance and the emitter stage of the 9th audion, the tenth audion is connected；The other end of the 14th resistance and the colelctor electrode of the 9th audion, the colelctor electrode of the tenth audion, the other end of the 15th resistance, the other end of the 5th electric capacity, the source electrode of the 3rd metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor and the sampling end of described current sampling circuit are connected；The other end of the 16th resistance and the grid of the 3rd metal-oxide-semiconductor are connected, the other end of the 17th resistance and the grid of the 4th metal-oxide-semiconductor are connected, the drain electrode of the 3rd metal-oxide-semiconductor, draining of the 4th metal-oxide-semiconductor are connected and this some outfan as described lower metal-oxide-semiconductor drive circuit that is connected, and are connected to described total outfan.
Further, the drain electrode of the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor drain electrode be jointly connected with+48V the voltage signal in described upper metal-oxide-semiconductor drive circuit.
Further, the first electric capacity, the 3rd electric capacity are electrochemical capacitor, and the second electric capacity, the 4th electric capacity, the 5th electric capacity are patch capacitor.
Further, in the first to the tenth audion, the first audion, the 3rd audion, the 5th audion, the 6th audion, the 9th audion and the tenth audion are PNP type triode；Second audion, the 4th audion, the 7th audion and the 8th audion are NPN type triode.
Further, first to fourth metal-oxide-semiconductor is N-channel enhanced mos field effect transistor.
After adopting such scheme, the invention have the characteristics that:
(1) by the gate drive voltage of reasonable disposition power MOS pipe, reduce its switching loss, increase the service life, it is achieved motor is better controlled；
(2) by the cooperative pattern of multitube, can reduce because of fault rate and extend its service life；
(3) circuit is simple and practical, good stability, with low cost, it is easy to safeguarding, market is widely used.
Accompanying drawing explanation
Fig. 1 is the integrated stand composition of the present invention.
Detailed description of the invention
Below with reference to accompanying drawing, technical scheme is described in detail.
As shown in Figure 1, the present invention provides a kind of motor control metal-oxide-semiconductor drive circuit, including interconnective upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit, the other end of described lower MOS drive circuit connects the sampled output of current sampling circuit, and the sampling input of described current sampling circuit connects motor.Below described upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit are introduced respectively.
Described upper metal-oxide-semiconductor drive circuit comprises first to the tenth ten resistance of resistance R1-R10, mono-diode of the first diode D1, first to the 6th six audions of audion Q1-Q6, two electric capacity of the first to the second electric capacity C1-C2 and two MOS transistors of the first to the second metal-oxide-semiconductor V1-V2, wherein ,+15V voltage signal (i.e. the driving power supply of motor) and the anode of the first diode D1, one end of the first resistance R1, the first audion Q1 emitter stage be connected；null+ 3.3V voltage signal (i.e. the light current power supply of motor) is connected with second resistance R2 one end，The other end of the second resistance R2 and the base stage of the second audion Q2 are connected，The emitter stage of the second audion Q2 and one end of the 4th resistance R4 are connected，The PWMA+ control signal of another described motor of termination of the 4th resistance R4，The colelctor electrode of the second audion Q2 and one end of the 3rd resistance R3、The base stage of the 3rd audion Q3 is connected，The other end of the 3rd resistance R3 and the negative electrode of the first diode D1、The emitter stage of the 3rd audion Q3、The colelctor electrode of the 4th audion Q4、One end of 8th resistance R8、One end of first electric capacity C1 is connected，The colelctor electrode of the 3rd audion Q3 and the base stage of the 4th audion Q4、The base stage of the 5th audion Q5、One end of 5th resistance R5 is connected，The emitter stage of the 4th audion Q4 and one end of the 6th resistance R6 are connected，The other end of the 6th resistance R6 and one end of the 7th resistance R7、The emitter stage of the 6th audion Q6、One end of second electric capacity C2、One end of 9th resistance R9、One end of tenth resistance R10 is connected，The other end of the 9th resistance R9 and the grid of the first metal-oxide-semiconductor V1 are connected，The other end of the tenth resistance R10 and the grid of the second metal-oxide-semiconductor V2 are connected，The emitter stage of the 5th audion Q5 and the other end of the 7th resistance R7、The base stage of the 6th audion Q6 is connected，The colelctor electrode of the 5th audion Q5 and the other end of the 5th resistance R5、The colelctor electrode of the 6th audion Q6、The other end of the 8th resistance R8、The other end of the first electric capacity C1、The other end of the second electric capacity C2、The source electrode of the first metal-oxide-semiconductor V1、The source electrode of the second metal-oxide-semiconductor V2、Output terminals A is connected，Output terminals A connects the winding of motor and controls the rotation of motor with output drive signal.In the present embodiment, the drain electrode of the first metal-oxide-semiconductor V1, the second metal-oxide-semiconductor V2 drain electrode be jointly connected with+48V voltage signal (i.e. the power power-supply of motor)；Described first electric capacity C1 is electrochemical capacitor, and the model of employing is 50V/47 μ F；Second electric capacity C2 is patch capacitor；First audion Q1, the 3rd audion Q3, the 5th audion Q5, the 6th audion Q6 are PNP type triode, and the second audion Q2, the 4th audion Q4 are NPN type triode；First metal-oxide-semiconductor V1 and the second metal-oxide-semiconductor V2 is N-channel enhanced mos field effect transistor.
Described lower metal-oxide-semiconductor drive circuit includes the 11st to the 17th seven resistance of resistance R11-R17, the 7th to the tenth tetra-audions of audion Q7-Q10, tri-three electric capacity of the 3rd to the 5th electric capacity C3-C5 and the 3rd to the 4th two MOS transistors of metal-oxide-semiconductor V3-V4.Wherein, + 3.3V voltage signal and the base stage of the 7th audion Q7, one end of the 3rd electric capacity C3, the 4th electric capacity C4 one end be connected, the other end of the 3rd electric capacity C3 and the other end common ground of the 4th electric capacity C4, the base stage of the colelctor electrode of the 7th audion Q7 and the other end of the first resistance R1, the first audion Q1 is connected, and the emitter stage of the 7th audion Q7 and one end of the 11st resistance R11 are connected；The other end of the 11st resistance R11 is connected with the PWMA-control signal of described motor, the colelctor electrode of the 8th audion Q8 and the emitter stage of the first audion Q1, + 15V voltage signal, the anode of the first diode D1 is connected, the colelctor electrode of the base stage of the 8th audion Q8 and the first audion Q1, the base stage of the 9th audion Q9, one end of 14th resistance R14 is connected, the emitter stage of the 8th audion Q8 and one end of the 12nd resistance R12 are connected, the other end of the 12nd resistance R12 and one end of the 13rd resistance R13, the emitter stage of the tenth audion Q10, one end of 5th electric capacity C5, one end of 16th resistance R16, one end of 17th resistance R17 is connected；The base stage of the other end of the 13rd resistance R13 and the emitter stage of the 9th audion Q9, the tenth audion Q10 is connected；The other end of the 14th resistance R14 and the colelctor electrode of the 9th audion Q9, the colelctor electrode of the tenth audion Q10, the other end of the 15th resistance R15, the other end of the 5th electric capacity C5, the source electrode of the 3rd metal-oxide-semiconductor V3, the source electrode of the 4th metal-oxide-semiconductor V4 and the sampled output (sampling) of described current sampling circuit are connected；The other end of the 16th resistance R16 and the grid of the 3rd metal-oxide-semiconductor V3 are connected, and the other end of the 17th resistance R17 and the grid of the 4th metal-oxide-semiconductor V4 are connected, the drain electrode of the 3rd metal-oxide-semiconductor V3, the 4th metal-oxide-semiconductor V4 drain electrode be connected and be connected to output terminals A.In the present embodiment, 3rd electric capacity C3 is electrochemical capacitor, 4th electric capacity C4, the 5th electric capacity C5 are patch capacitor, the parallel connection of the 3rd electric capacity C3 and the four electric capacity C4 can provide stable base voltage for the 7th audion Q7, and the 5th electric capacity C5 is for being filtered the signal of the 3rd metal-oxide-semiconductor V3 and the four metal-oxide-semiconductor V4；7th audion Q7 and the 8th audion Q8 is NPN type triode, and the 9th audion Q9 and the ten audion Q10 is PNP type triode；3rd metal-oxide-semiconductor V3 and the four metal-oxide-semiconductor V4 is N-channel enhanced mos field effect transistor.
Adopting circuit structure provided by the invention, on it, metal-oxide-semiconductor drive circuit separates with lower metal-oxide-semiconductor drive circuit and works alone, and so can reduce because circuit connects the fault rate that coupling etc. causes, be greatly increased the stability of circuit, increase the service life.On the other hand, the PWMA control signal of PWM output module output is not directly or indirectly added on metal-oxide-semiconductor, but by the reasonable disposition of combinational circuit, reduces its impact to device, extends the service life of related device.
During work, single-chip microcomputer receives the signal of Hall element etc., export within a cycle after calculating fixing PWMA signal control on the turning on and off of two metal-oxide-semiconductors V3, V4 of two metal-oxide-semiconductors V1, V2 and lower metal-oxide-semiconductor drive circuit in metal-oxide-semiconductor drive circuit, thus controlling the rotation that motor controls, by the break-make of the relevant audion of PWMA signal control drive circuit, thus reaching to control the purpose of corresponding metal-oxide-semiconductor switch.In upper metal-oxide-semiconductor drive circuit, electric capacity C1 is as bootstrap capacitor, and its discharge and recharge can improve the PWMA signal control accuracy to each metal-oxide-semiconductor well, reaches to control motor with better controlling effect.When PWMA control signal is high level, first metal-oxide-semiconductor V1, the second metal-oxide-semiconductor V2 conducting, now, bootstrap capacitor C1 charges, treat that PWMA control signal level conversion makes the cut-off of relevant audion so that after associated driver circuitry quits work, bootstrap capacitor C1 passes through discharge diode Q6 repid discharge, makes the first metal-oxide-semiconductor V1, the second metal-oxide-semiconductor V2 be immediately turned off, it is off state, improves control accuracy.
The motor of the present invention controls to use metal-oxide-semiconductor drive circuit, the working method of metal-oxide-semiconductor in parallel, it is possible to extension realizes the metal-oxide-semiconductor drive circuit of six pipes, nine pipes, 12 pipes, to meet the power demand of the brshless DC motor of different loads amount.
Above example is only the technological thought that the present invention is described, it is impossible to limits protection scope of the present invention, every technological thought proposed according to the present invention, any change done on technical scheme basis with this, each falls within scope.
Claims (9)
1. a motor controls to use metal-oxide-semiconductor drive circuit, it is characterized in that: include interconnective upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit, the outfan of described upper metal-oxide-semiconductor drive circuit is connected and as total outfan with the outfan of lower metal-oxide-semiconductor drive circuit, and the other end of described lower MOS drive circuit connects the sampling end of current sampling circuit.
2. motor as claimed in claim 1 controls to use metal-oxide-semiconductor drive circuit, it is characterized in that: described upper metal-oxide-semiconductor drive circuit includes the first to the tenth resistance, the first diode, the first to the 6th audion, the first to the second electric capacity and the first to the second metal-oxide-semiconductor, wherein ,+15V voltage signal and the anode of the first diode, one end of the first resistance, the first audion emitter stage be connected；null+ 3.3V voltage signal and second resistance one end are connected，The other end of the second resistance and the base stage of the second audion are connected，The emitter stage of the second audion and one end of the 4th resistance are connected，The PWMA+ control signal of another described motor of termination of the 4th resistance，The colelctor electrode of the second audion and one end of the 3rd resistance、The base stage of the 3rd audion is connected，The other end of the 3rd resistance and the negative electrode of the first diode、The emitter stage of the 3rd audion、The colelctor electrode of the 4th audion、One end of 8th resistance、One end of first electric capacity is connected，The colelctor electrode of the 3rd audion and the base stage of the 4th audion、The base stage of the 5th audion、One end of 5th resistance is connected，The emitter stage of the 4th audion and one end of the 6th resistance are connected，The other end of the 6th resistance and one end of the 7th resistance、The emitter stage of the 6th audion、One end of second electric capacity、One end of 9th resistance、One end of tenth resistance is connected，The other end of the 9th resistance and the grid of the first metal-oxide-semiconductor are connected，The other end of the tenth resistance and the grid of the second metal-oxide-semiconductor are connected，The emitter stage of the 5th audion and the other end of the 7th resistance、The base stage of the 6th audion is connected，The colelctor electrode of the 5th audion and the other end of the 5th resistance、The colelctor electrode of the 6th audion、The other end of the 8th resistance、The other end of the first electric capacity、The other end of the second electric capacity、The source electrode of the first metal-oxide-semiconductor、The source electrode of the second metal-oxide-semiconductor、Total outfan is connected，The source electrode of described first metal-oxide-semiconductor、The connected point of the source electrode of the second metal-oxide-semiconductor is the outfan of described upper metal-oxide-semiconductor drive circuit.
3. motor as claimed in claim 2 controls to use metal-oxide-semiconductor drive circuit, it is characterised in that: the model that described first electric capacity adopts is 50V/47 μ F.
4. motor as claimed in claim 2 controls to use metal-oxide-semiconductor drive circuit, it is characterised in that: the drain electrode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor drain electrode be jointly connected with+48V voltage signal.
5. motor as claimed in claim 2 controls to use metal-oxide-semiconductor drive circuit, it is characterized in that: described lower metal-oxide-semiconductor drive circuit includes the 11st to the 17th resistance, 7th to the tenth audion, 3rd to the 5th electric capacity and the 3rd to the 4th metal-oxide-semiconductor, wherein, the base stage of+3.3V voltage signal and the 7th audion, one end of 3rd electric capacity, one end of 4th electric capacity is connected, the other end of the 3rd electric capacity and the other end common ground of the 4th electric capacity, the colelctor electrode of the 7th audion and the other end of the first resistance, the base stage of the first audion is connected, the emitter stage of the 7th audion and one end of the 11st resistance are connected；The other end of the 11st resistance is connected with the PWMA-control signal of described motor, the colelctor electrode of the 8th audion and the emitter stage of the first audion, + 15V voltage signal, the anode of the first diode is connected, the base stage of the 8th audion and the colelctor electrode of the first audion, the base stage of the 9th audion, one end of 14th resistance is connected, the emitter stage of the 8th audion and one end of the 12nd resistance are connected, the other end of the 12nd resistance and one end of the 13rd resistance, the emitter stage of the tenth audion, one end of 5th electric capacity, one end of 16th resistance, one end of 17th resistance is connected；The base stage of the other end of the 13rd resistance and the emitter stage of the 9th audion, the tenth audion is connected；The other end of the 14th resistance and the colelctor electrode of the 9th audion, the colelctor electrode of the tenth audion, the other end of the 15th resistance, the other end of the 5th electric capacity, the source electrode of the 3rd metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor and the sampling end of described current sampling circuit are connected；The other end of the 16th resistance and the grid of the 3rd metal-oxide-semiconductor are connected, the other end of the 17th resistance and the grid of the 4th metal-oxide-semiconductor are connected, the drain electrode of the 3rd metal-oxide-semiconductor, draining of the 4th metal-oxide-semiconductor are connected and this some outfan as described lower metal-oxide-semiconductor drive circuit that is connected, and are connected to described total outfan.
6. motor as claimed in claim 5 controls to use metal-oxide-semiconductor drive circuit, it is characterised in that: the drain electrode of the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor drain electrode be jointly connected with the source electrode of the source electrode of the first metal-oxide-semiconductor in described upper metal-oxide-semiconductor drive circuit, the second metal-oxide-semiconductor.
7. motor as claimed in claim 5 controls to use metal-oxide-semiconductor drive circuit, it is characterised in that: the first electric capacity, the 3rd electric capacity are electrochemical capacitor, and the second electric capacity, the 4th electric capacity, the 5th electric capacity are patch capacitor.
8. motor as claimed in claim 5 controls to use metal-oxide-semiconductor drive circuit, it is characterized in that: in the first to the tenth audion, the first audion, the 3rd audion, the 5th audion, the 6th audion, the 9th audion and the tenth audion are PNP type triode；Second audion, the 4th audion, the 7th audion and the 8th audion are NPN type triode.
9. motor as claimed in claim 5 controls to use metal-oxide-semiconductor drive circuit, it is characterised in that: first to fourth metal-oxide-semiconductor is N-channel enhanced mos field effect transistor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610252039.1A CN105811819B (en) | 2016-04-21 | 2016-04-21 | A kind of motor control metal-oxide-semiconductor driving circuit |
| CN201810614751.0A CN108667362A (en) | 2016-04-21 | 2016-04-21 | A kind of method that motor control is driven with metal-oxide-semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610252039.1A CN105811819B (en) | 2016-04-21 | 2016-04-21 | A kind of motor control metal-oxide-semiconductor driving circuit |
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| CN201810614751.0A Division CN108667362A (en) | 2016-04-21 | 2016-04-21 | A kind of method that motor control is driven with metal-oxide-semiconductor |
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| CN101420198A (en) * | 2008-12-05 | 2009-04-29 | 广州华南智信微系统有限公司 | Five phase DC brushless motor controller |
| CN204349852U (en) * | 2014-11-05 | 2015-05-20 | 无锡曼克斯电子科技有限公司 | A kind of control device of wind-driven generator limit protection assembly |
| CN204681274U (en) * | 2015-06-08 | 2015-09-30 | 无锡机电高等职业技术学校 | A kind of brshless DC motor metal-oxide-semiconductor drive circuit |
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| CN106208637A (en) * | 2016-09-12 | 2016-12-07 | 中国矿业大学 | A kind of drive circuit of switched reluctance machines MOSFET power inverter |
| CN106208637B (en) * | 2016-09-12 | 2019-07-02 | 中国矿业大学 | A kind of driving circuit of switched reluctance machines MOSFET power inverter |
| CN110176879A (en) * | 2019-06-28 | 2019-08-27 | 西安微电子技术研究所 | A kind of Flouride-resistani acid phesphatase high-voltage driving circuit |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105811819B (en) | 2018-08-17 |
| CN108667362A (en) | 2018-10-16 |
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