CN206283485U - A kind of simple SICMOS drive circuits - Google Patents
A kind of simple SICMOS drive circuits Download PDFInfo
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- CN206283485U CN206283485U CN201621323052.3U CN201621323052U CN206283485U CN 206283485 U CN206283485 U CN 206283485U CN 201621323052 U CN201621323052 U CN 201621323052U CN 206283485 U CN206283485 U CN 206283485U
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- triode
- electric capacity
- diode
- oxide
- metal
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Abstract
The utility model is related to a kind of simple SICMOS drive circuits,Including input A,One end of the input A connection electric capacity C1,The other end of electric capacity C1 is connected respectively to the base stage of triode Q1 and triode Q2,The colelctor electrode connection external power supply Vcc of triode Q1,The grounded emitter of the triode Q2,The colelctor electrode of the emitter stage of the triode Q1 and the triode Q2 is connected to one end of electric capacity C2 together,The grid of the other end connection metal-oxide-semiconductor Q3 of electric capacity C2,The source ground of metal-oxide-semiconductor Q3,Negative pole of the one end of electric capacity C2 also with diode D1 is connected,The positive pole of the diode D1 is connected with the negative pole of diode D2,The positive pole of the diode D2 is connected with the negative pole of triode D3,The positive pole of the triode D3 connects the other end of the electric capacity C2,Suitable for different metal-oxide-semiconductors,Shut-off voltage difference that can be as needed is adjusted,The need for meeting difference.
Description
Technical field
The utility model is related to a kind of simple SICMOS drive circuits, belongs to electric and electronic technical field.
Background technology
Metal-oxide-semiconductor has two types, and a class is nMOS pipes, and another kind of is pMOS pipes.By taking nMOS pipes as an example, if grid and source electrode
Between voltage be more than or equal to threshold voltage, then nMOS pipes are turned on, if voltage between grid and source electrode is less than threshold voltage,
Then nMOS pipes just disconnect.Using this conducting of metal-oxide-semiconductor and the characteristic for disconnecting, metal-oxide-semiconductor can be used for Switching Power Supply or motor
Drive, specific practice is, control metal-oxide-semiconductor to be turned on or off using metal-oxide-semiconductor drive circuit, so as to reach controlling switch power supply or
Motor is switched on or switched off.
It is generally acknowledged that turning on metal-oxide-semiconductor does not need electric current, as long as the voltage between grid and source electrode is higher than threshold voltage.
Be can see in the structure of metal-oxide-semiconductor, there is parasitic capacitance between grid and source electrode and between grid and drain electrode, metal-oxide-semiconductor
Conducting and disconnection are actually the discharge and recharge to electric capacity, in order to the conducting speed for improving metal-oxide-semiconductor needs enough electric currents to drive MOS
Pipe, the metal-oxide-semiconductor drive circuit of prior art does not account for this factor.During conducting nMOS pipes, its grid voltage is more than source electrode electricity
Pressure, and the source electrode of nMOS pipes generally connects the positive pole of power supply (such as battery or battery pack), now the driving voltage of grid is accomplished by
Output voltage than power supply is big, and driving voltage so high is difficult to obtain, and this wants special booster circuit, therefore, it is existing
The metal-oxide-semiconductor drive circuit of technology is commonly provided with charge pump or special boost chip, which increases the complexity of metal-oxide-semiconductor drive circuit
Property and cost.
Utility model content
The technical problems to be solved in the utility model is：To overcome above mentioned problem, there is provided a kind of Simple And Practical it is simple
SICMOS drive circuits.
The utility model solves the technical scheme that its technical problem used：
A kind of simple SICMOS drive circuits, including input A, one end of the input A connection electric capacity C1, the electricity
The other end for holding C1 is connected respectively to the base stage of triode Q1 and triode Q2, and the colelctor electrode of the triode Q1 connects external electricity
The colelctor electrode of source Vcc, the grounded emitter of the triode Q2, the emitter stage of the triode Q1 and the triode Q2 is together
It is connected to one end of electric capacity C2, the grid of the other end connection metal-oxide-semiconductor Q3 of the electric capacity C2, the source ground of the metal-oxide-semiconductor Q3,
Negative pole of the one end of the electric capacity C2 also with diode D1 is connected, and the positive pole of the diode D1 connects with the negative pole of diode D2
Connect, the positive pole of the diode D2 is connected with the negative pole of triode D3, the positive pole of the triode D3 connects the electric capacity C2's
The other end.
The beneficial effects of the utility model are：The utility model drive signal is input into by input A, by electric capacity C1 and
C2 reversely, keeps MOS drive signals with the same same phase of frequency of the drive signal of input, three diodes D1, D2 and D3 of series connection twice
The shut-off negative pressure of metal-oxide-semiconductor is produced, can be adjusted as needed, meet the use needs of different metal-oxide-semiconductors.
Brief description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples.
Fig. 1 is the circuit diagram of the utility model one embodiment.
Specific embodiment
The utility model is described in further detail presently in connection with accompanying drawing.These accompanying drawings are simplified schematic diagram,
Basic structure of the present utility model is only illustrated in a schematic way, therefore it only shows the composition relevant with the utility model.
Embodiment 1
Described in the utility model a kind of simple SICMOS drive circuits as shown in Figure 1, including input A, the input
End A connects one end of electric capacity C1, and the other end of the electric capacity C1 is connected respectively to the base stage of triode Q1 and triode Q2, described
The colelctor electrode connection external power supply Vcc of triode Q1, the grounded emitter of the triode Q2, the emitter stage of the triode Q1
With one end that the colelctor electrode of the triode Q2 is connected to electric capacity C2 together, the other end connection metal-oxide-semiconductor Q3's of the electric capacity C2
Grid, the source ground of the metal-oxide-semiconductor Q3, the negative pole of one end of the electric capacity C2 also with diode D1 is connected, the diode
The positive pole of D1 is connected with the negative pole of diode D2, and the positive pole of the diode D2 is connected with the negative pole of triode D3, three pole
The positive pole of pipe D3 connects the other end of the electric capacity C2.
The utility model drive signal is input into by input A, reverse twice by electric capacity C1 and C2, keeps MOS to drive
Signal produces the shut-off negative pressure of metal-oxide-semiconductor with the same same phase of frequency of the drive signal of input, three diodes D1, D2 and D3 of series connection, can
It is adjusted as needed, meets the use needs of different metal-oxide-semiconductors.
With above-mentioned according to desirable embodiment of the present utility model as enlightenment, by above-mentioned description, related work people
Member can carry out various changes and amendments in the range of without departing from this utility model technological thought completely.This reality
The content on specification is not limited to new technical scope, it is necessary to its technology is determined according to right
Property scope.
Claims (1)
1. a kind of simple SICMOS drive circuits, it is characterised in that including input A, the one of the input A connection electric capacity C1
End, the other end of the electric capacity C1 is connected respectively to the base stage of triode Q1 and triode Q2, the colelctor electrode of the triode Q1
Connection external power supply Vcc, the grounded emitter of the triode Q2, the emitter stage of the triode Q1 and the triode Q2's
Colelctor electrode is connected to one end of electric capacity C2, the grid of the other end connection metal-oxide-semiconductor Q3 of the electric capacity C2, the metal-oxide-semiconductor Q3 together
Source ground, the negative pole of one end of the electric capacity C2 also with diode D1 is connected, the positive pole and diode of the diode D1
The negative pole connection of D2, the positive pole of the diode D2 is connected with the negative pole of triode D3, the positive pole connection institute of the triode D3
State the other end of electric capacity C2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621323052.3U CN206283485U (en) | 2016-12-05 | 2016-12-05 | A kind of simple SICMOS drive circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621323052.3U CN206283485U (en) | 2016-12-05 | 2016-12-05 | A kind of simple SICMOS drive circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206283485U true CN206283485U (en) | 2017-06-27 |
Family
ID=59075324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621323052.3U Expired - Fee Related CN206283485U (en) | 2016-12-05 | 2016-12-05 | A kind of simple SICMOS drive circuits |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206283485U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114257068A (en) * | 2021-11-24 | 2022-03-29 | 北京机械设备研究所 | SiC switching tube driving circuit, driving control method and switching power supply |
-
2016
- 2016-12-05 CN CN201621323052.3U patent/CN206283485U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114257068A (en) * | 2021-11-24 | 2022-03-29 | 北京机械设备研究所 | SiC switching tube driving circuit, driving control method and switching power supply |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170627 Termination date: 20191205 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |