CN206077216U - A kind of efficient metal-oxide-semiconductor drive circuit - Google Patents
A kind of efficient metal-oxide-semiconductor drive circuit Download PDFInfo
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- CN206077216U CN206077216U CN201621025004.6U CN201621025004U CN206077216U CN 206077216 U CN206077216 U CN 206077216U CN 201621025004 U CN201621025004 U CN 201621025004U CN 206077216 U CN206077216 U CN 206077216U
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Abstract
The utility model discloses a kind of efficient metal-oxide-semiconductor drive circuit, including power supply, power supply is connected with the two ends of transformer, and the first end of the secondary coil of transformator is connected with the first end of the first end and resistance two of resistance one；Second end of resistance one is connected with the positive terminal of diode one, and the negative pole end of diode one is connected with the first end of the negative pole end of diode two, the emitter stage of PNP triode and resistance three；Second end of resistance two is connected with the negative pole end of the positive terminal of diode two, the base stage of PNP triode and diode three, the colelctor electrode of the positive terminal and PNP triode of diode three is connected with the second end of the secondary coil of transformator, second end of resistance three is connected with the grid of metal-oxide-semiconductor, the source ground of metal-oxide-semiconductor.This utility model can realize the efficient conducting of metal-oxide-semiconductor, enable the voltage between metal-oxide-semiconductor grid and source electrode quickly to meet the condition that metal-oxide-semiconductor is switched on or off.
Description
Technical field
This utility model is related to drive circuit technical field, it particularly relates to a kind of efficient metal-oxide-semiconductor drive circuit.
Background technology
MOS pipes have two types, and a class is nMOS pipes, and another kind of is pMOS pipes, by taking nMOS pipes as an example, if grid and source
Voltage between pole is more than or equal to threshold voltage, then nMOS pipes are turned on, if the voltage between grid and source electrode is less than threshold value electricity
Pressure, then nMOS pipes just disconnection.Using this conducting of metal-oxide-semiconductor and the characteristic for disconnecting, MOS can be managed for Switching Power Supply or motor
Driving, specific practice is, is turned on or off using metal-oxide-semiconductor drive circuit control metal-oxide-semiconductor, so as to reach controlling switch power supply
Or motor is switched on or switched off.
It is connected with square-wave voltage with the grid of nMOS pipes, as a example by source ground, square-wave voltage could when rising to certain value
The voltage between grid and source electrode is met more than threshold voltage, so that nMOS conductings.But square-wave voltage rises to be needed necessarily
Time, therefore can cause nMOS pipes turn on delay, equally, nMOS pipes also have certain delay in disconnection process, i.e.,
The efficient response of nMOS pipes can not be realized, the metal-oxide-semiconductor drive circuit of prior art does not account for this factor.
Utility model content
The purpose of this utility model is to provide a kind of efficient metal-oxide-semiconductor drive circuit, to overcome what currently available technology was present
Above-mentioned deficiency.
To realize above-mentioned technical purpose, what the technical solution of the utility model was realized in：
A kind of efficient metal-oxide-semiconductor drive circuit, including power supply, described power supply are connected with the two ends of transformer,
The first end of the secondary coil of described transformator is connected with the first end of the first end of resistance one and resistance two；Described resistance
One the second end is connected with the positive terminal of diode one, and the negative pole end of described diode one is connected with the negative pole of diode two
The first end of end, the emitter stage of PNP triode and resistance three；The emitter stage of described PNP triode is connected with the of resistance four
One end, the second end of described resistance two are connected with the negative of the positive terminal of diode two, the base stage of PNP triode and diode three
Extremely, the colelctor electrode at the second end of described resistance four, the positive terminal of described diode three and PNP triode is and transformator
Secondary coil the connection of the second end, the second end of described resistance three is connected with the grid of metal-oxide-semiconductor, the source of described metal-oxide-semiconductor
Pole is grounded.
After above-mentioned technical proposal, this utility model has following beneficial effect：This utility model can realize MOS
The efficient break-make of pipe, enables the voltage between metal-oxide-semiconductor grid and source electrode quickly to meet the condition that metal-oxide-semiconductor is switched on or off.
Description of the drawings
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to embodiment
Needed for accompanying drawing to be used be briefly described, it should be apparent that, drawings in the following description are only of the present utility model
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can be with according to this
A little accompanying drawings obtain other accompanying drawings.
Fig. 1 is the circuit diagram of a kind of efficient metal-oxide-semiconductor drive circuit of this utility model embodiment；
In figure：1st, transformator；2nd, resistance one；3rd, diode one；4th, diode two；5th, resistance three；6th, metal-oxide-semiconductor；7th, two pole
Pipe three；8th, PNP triode；9th, resistance two；10th, resistance four.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only this utility model a part of embodiment, rather than whole
Embodiment.Based on the embodiment in this utility model, all other embodiment that those of ordinary skill in the art are obtained all belongs to
In the scope of this utility model protection.
As shown in figure 1, a kind of efficient metal-oxide-semiconductor drive circuit described in this utility model embodiment, including power supply, it is described
Power supply is connected with the two ends of 1 primary coil of transformator, and the first end of the secondary coil of described transformator 1 is connected with resistance 1
First end and resistance 29 first end；Second end of described resistance 1 is connected with the positive terminal of diode 1, described
The negative pole end of diode 1 is connected with the first end of the negative pole end of diode 24, the emitter stage of PNP triode 8 and resistance 35；
The emitter stage of described PNP triode 8 is connected with the first end of resistance 4 10, and the second end of described resistance 29 is connected with two
The negative pole end of the positive terminal, the base stage of PNP triode 8 and diode 37 of pole pipe 24, the second end of described resistance 4 10, institute
The colelctor electrode of the positive terminal and PNP triode 8 of the diode 37 stated is connected with the second end of the secondary coil of transformator 1, institute
Second end of the resistance 35 stated is connected with the grid of metal-oxide-semiconductor 6, the source ground of described metal-oxide-semiconductor 6.
Power supply of the present utility model provides square-wave voltage, and square-wave voltage is through driving transformer and the rear class of driving transformer
After circuit, behind the forward position of square-wave voltage and tailing edge becomes very straight, namely can just make within the extremely short time metal-oxide-semiconductor grid with
Voltage between source electrode meets the condition of metal-oxide-semiconductor break-make, so that metal-oxide-semiconductor realizes quick on-off.
This utility model can realize the efficient break-make of metal-oxide-semiconductor, enable the voltage between metal-oxide-semiconductor grid and source electrode quick
Meet the condition that metal-oxide-semiconductor is switched on or off, so as to realize work rapidly and efficiently.
Preferred embodiment of the present utility model is the foregoing is only, it is not to limit this utility model, all at this
Within the spirit and principle of utility model, any modification, equivalent substitution and improvements made etc. should be included in this utility model
Protection domain within.
Claims (1)
1. a kind of efficient metal-oxide-semiconductor drive circuit, including power supply, it is characterised in that described power supply is connected with transformator（1）It is primary
The two ends of coil, described transformator（1）The first end of secondary coil be connected with resistance one（2）First end and resistance two
（9）First end；Described resistance one（2）The second end be connected with diode one（3）Positive terminal, described diode one
（3）Negative pole end be connected with diode two（4）Negative pole end, PNP triode（8）Emitter stage and resistance three（5）First end；
Described PNP triode（8）Emitter stage be connected with resistance four（10）First end, described resistance two（9）The second end connect
It is connected to diode two（4）Positive terminal, PNP triode（8）Base stage and diode three（7）Negative pole end, described resistance four
（10）The second end, described diode three（7）Positive terminal and PNP triode（8）Colelctor electrode and transformator（1）Time
The second end connection of level coil, described resistance three（5）The second end and metal-oxide-semiconductor（6）Grid connection, described metal-oxide-semiconductor（6）
Source ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621025004.6U CN206077216U (en) | 2016-08-31 | 2016-08-31 | A kind of efficient metal-oxide-semiconductor drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621025004.6U CN206077216U (en) | 2016-08-31 | 2016-08-31 | A kind of efficient metal-oxide-semiconductor drive circuit |
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| CN206077216U true CN206077216U (en) | 2017-04-05 |
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| CN201621025004.6U Active CN206077216U (en) | 2016-08-31 | 2016-08-31 | A kind of efficient metal-oxide-semiconductor drive circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107968567A (en) * | 2017-12-20 | 2018-04-27 | 上海艾为电子技术股份有限公司 | A kind of nmos switch tube drive circuit |
-
2016
- 2016-08-31 CN CN201621025004.6U patent/CN206077216U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107968567A (en) * | 2017-12-20 | 2018-04-27 | 上海艾为电子技术股份有限公司 | A kind of nmos switch tube drive circuit |
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Effective date of registration: 20201023 Address after: R & D Building 1, Fuma Zhiying science and Technology Park, 398 Yanghu Road, Ma'anshan economic and Technological Development Zone, Anhui Province Patentee after: Anhui JinShengDa bioelectronics Technology Co., Ltd Address before: 102200, Changping District, Beijing science and Technology Park, 27 innovation road, building 2, 2 Patentee before: Golden Scorpion Co.,Ltd. |