CN201937456U - MOS (Metal Oxide Semiconductor) tube drive circuit - Google Patents
MOS (Metal Oxide Semiconductor) tube drive circuit Download PDFInfo
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- CN201937456U CN201937456U CN2010206706186U CN201020670618U CN201937456U CN 201937456 U CN201937456 U CN 201937456U CN 2010206706186 U CN2010206706186 U CN 2010206706186U CN 201020670618 U CN201020670618 U CN 201020670618U CN 201937456 U CN201937456 U CN 201937456U
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Abstract
The utility model discloses a MOS (Metal Oxide Semiconductor) tube drive circuit, comprising MOS tubes, a transformer, a rectifying filter circuit and an MOS tube drive module, wherein the transformer is used for generating driving signals to control the MOS tubes; the first output end of the transformer is sequentially connected with the MOD tubes through the rectifier filter circuit and the MOS tube drive module; and the second output end of the transformer is connected with the MOS tubes through the MOS tube drive module. The MOS tube drive circuit adopts the mode that the secondary rectifier filter of the transformer is combined with a push-pull circuit in the MOS tube drive module to drive the conduction of an MOS, so that the rise time of the driving signal is shortened, and the overshooting in rising is reduced, thereby reducing the power consumption and the heat productivity of the MOS tube.
Description
Technical field
The utility model relates to the drive circuit technical field, relates in particular to a kind of metal-oxide-semiconductor drive circuit.
Background technology
At present, in the power circuit of many electric equipments, can use MOS (metal oxid semiconductor, metal monooxide semiconductor) field effect transistor tube drive circuit.Generally the grid at metal-oxide-semiconductor applies an adjustable drive signal, recently controls turn-on and turn-off time of metal-oxide-semiconductor by the duty of regulating drive signal, thus output scalable, controllable voltage.
But in traditional metal-oxide-semiconductor drive circuit, the driving rising edge of metal-oxide-semiconductor drive signal is along rise time length and higher overshoot is arranged, and makes that driven metal-oxide-semiconductor power consumption increases, heating is serious, makes the metal-oxide-semiconductor lost of life, even damages.
The utility model content
The utility model discloses a kind of metal-oxide-semiconductor drive circuit, can effectively shorten the rising edge of drive signal, reduce the overshoot of rising, thereby reduce the power consumption of metal-oxide-semiconductor, reduce the caloric value of metal-oxide-semiconductor.
In order to reach the foregoing invention purpose, the utility model provides a kind of metal-oxide-semiconductor drive circuit, comprise metal-oxide-semiconductor, produce drive signal to control the transformer of described metal-oxide-semiconductor, described drive circuit also comprises current rectifying and wave filtering circuit and metal-oxide-semiconductor driver module, wherein, first output of described transformer links to each other with metal-oxide-semiconductor successively by current rectifying and wave filtering circuit, metal-oxide-semiconductor driver module, and second output of described transformer links to each other with described metal-oxide-semiconductor by described metal-oxide-semiconductor driver module.
Described current rectifying and wave filtering circuit is made up of diode and capacitances in series.
Described metal-oxide-semiconductor driver module comprises plug-type circuit, and this plug-type circuit is to be recommended by two triodes to be connected to form.Described two triodes are respectively NPN type triode and positive-negative-positive triode.
Diode in the described current rectifying and wave filtering circuit links to each other with first output of transformer, and the two ends of electric capacity link to each other with the collector electrode of two triodes in the described plug-type circuit respectively.Described metal-oxide-semiconductor driver module also comprises first resistance, second resistance and the 3rd resistance, wherein, second output of described transformer links to each other with the base stage of two triodes in the described plug-type circuit respectively by first resistance, the emitter of described two triodes links to each other with the grid of described metal-oxide-semiconductor by second resistance, and described the 3rd resistance is connected across between the grid of metal-oxide-semiconductor and the earth terminal and constitutes discharge path.
The beneficial effect of the utility model embodiment is as follows:
The disclosed metal-oxide-semiconductor drive circuit of the utility model, the conducting of having adopted the transformer secondary output rectifying and wave-filtering to come the driven MOS pipe in conjunction with the mode of plug-type circuit, wherein, the spike energy that adopts the mode of rectifying and wave-filtering the overshoot of drive signal rising edge can be produced absorbs and is converted into direct voltage and comes the driven MOS pipe; In addition, adopt plug-type circuit can quicken the conducting of metal-oxide-semiconductor.Adopt above technology, shortened the rise time of drive signal, reduced the overshoot of rising, thereby reduce the power consumption of metal-oxide-semiconductor, reduce the caloric value of metal-oxide-semiconductor.
Description of drawings
Fig. 1 is the metal-oxide-semiconductor drive circuit principle framework figure of the utility model embodiment;
Fig. 2 is the metal-oxide-semiconductor drive circuit schematic diagram of the utility model first embodiment;
Fig. 3 is the metal-oxide-semiconductor drive circuit schematic diagram of the utility model second embodiment.
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
Referring to Fig. 1, be the metal-oxide-semiconductor drive circuit principle framework figure of the utility model embodiment, as shown in the figure, the metal-oxide-semiconductor drive circuit, comprise and produce transformer 11, current rectifying and wave filtering circuit 12, metal-oxide-semiconductor driver module 13, the metal-oxide-semiconductor 14 of drive signal to control described metal-oxide-semiconductor, first output of described transformer 11 links to each other with metal-oxide-semiconductor 14 successively by current rectifying and wave filtering circuit 12, metal-oxide-semiconductor driver module 13, and second output of described transformer 11 links to each other with metal-oxide-semiconductor 14 by metal-oxide-semiconductor driver module 13.
The drive signal of first output output of transformer 11 is produced into direct voltage by current rectifying and wave filtering circuit 12 and is come the driven MOS pipe by metal-oxide-semiconductor driver module 13; The drive signal may command metal-oxide-semiconductor driver module 13 of second output output of transformer 11 quickens the conducting of MOS.Wherein current rectifying and wave filtering circuit 12 is made up of diode and capacitances in series, and metal-oxide-semiconductor driver module 13 comprises plug-type circuit, and this plug-type circuit is to be recommended by two triodes to be connected to form.
The disclosed metal-oxide-semiconductor drive circuit of present embodiment, the spike energy absorption that the mode of employing rectifying and wave-filtering can be produced the overshoot of drive signal rising edge is converted into direct voltage and comes the driven MOS pipe; In addition, adopt metal-oxide-semiconductor driver module 13 to quicken the conducting of metal-oxide-semiconductor.Adopt above technology, shortened the rise time of drive signal, reduced the overshoot of rising, thereby reduce the power consumption of metal-oxide-semiconductor, reduce the caloric value of metal-oxide-semiconductor.
Need to prove that the quantity of current rectifying and wave filtering circuit 12, metal-oxide-semiconductor driver module 13, metal-oxide-semiconductor 14 all can be one or morely in the metal-oxide-semiconductor drive circuit of present embodiment, will introduce one by one among the embodiment hereinafter in detail.
Referring to Fig. 2, be the metal-oxide-semiconductor drive circuit schematic diagram of the utility model first embodiment, as shown in the figure, the metal-oxide-semiconductor drive circuit comprises transformer T1, diode D1, capacitor C 1, three resistance R 1, R2, R3, two triode Q1, Q2 and metal-oxide-semiconductor Q3.
Please be simultaneously in conjunction with Fig. 1, diode D1 and capacitor C 1 have been composed in series the current rectifying and wave filtering circuit 12 among Fig. 1; Resistance R 1, R2, R3 and two triode Q1, Q2 have formed the metal-oxide-semiconductor driver module 13 among Fig. 1, wherein, two triode Q1, Q2 recommend and are connected to form plug-type circuit, can quicken the conducting of metal-oxide-semiconductor Q3, triode Q1 is a NPN type triode among Fig. 2, and Q2 is the positive-negative-positive triode.
Particularly, the secondary winding transformer of transformer T1 i.e. first output links to each other with diode D1, the both positive and negative polarity of capacitor C 1 links to each other with the collector electrode of two triode Q1, Q2 in the plug-type circuit respectively, and the emitter of described two triode Q1, Q2 links to each other with the grid of described metal-oxide-semiconductor Q3 by resistance R 2.The secondary winding transformer of transformer T1 i.e. second output links to each other with the base stage of triode Q1, Q2 respectively by resistance R 1, the emitter of described two triode Q1, Q2 links to each other with the grid of described metal-oxide-semiconductor Q3 by resistance R 2, and resistance R 3 is connected across between the grid of metal-oxide-semiconductor Q3 and the earth terminal and constitutes discharge path.
The operation principle of this drive circuit is as follows:
When the primary winding voltage of transformer T1 is last when negative just down, its secondary winding transformer induced voltage also be last negative just down, and it is electric that the voltage of output dashes for capacitor C 1 by diode D1 on the one hand, obtains direct voltage on capacitor C 1; Provide a high level by resistance R 1 to triode Q1, Q2 in the plug-type circuit on the other hand, make triode Q1 conducting, triode Q2 ends, and the direct voltage on the capacitor C 1 is opened metal-oxide-semiconductor Q3 by triode Q1, resistance R 2.
Otherwise easily right, when bearing positive down induced voltage in the transformer T1 generation,, repeat no more with above-mentioned analytical method.
Present embodiment, the spike energy that the overshoot of drive signal rising edge can be produced by the capacitor C in the current rectifying and wave filtering circuit 1 absorb and are converted into direct voltage and come driven MOS pipe Q3, by plug-type circuit, can quicken the conducting of metal-oxide-semiconductor Q3.Compare traditional drive circuit, present embodiment has shortened the rise time of drive signal, has reduced the overshoot of rising, thereby reduces the power consumption of metal-oxide-semiconductor Q3, reduces the caloric value of metal-oxide-semiconductor Q3.
Referring to Fig. 3, be the metal-oxide-semiconductor drive circuit schematic diagram of the utility model second embodiment, as shown in the figure, the primary and secondary winding L 1 of transformer T2, L2, L3 constitute the isolation of signal and transmit module; Resistance R 1, R2, R3 and triode Q3, Q4 form the driver module of metal-oxide-semiconductor Q1; R4, R5, R6 and triode Q5, Q6 form the driver module of metal-oxide-semiconductor Q2; Diode D1 and capacitor C 2, diode D2 and capacitor C 3 are formed current rectifying and wave filtering circuit respectively; Metal-oxide-semiconductor Q1, Q2, capacitor C 1, transformer T1 form the energy delivery module.
More than relate to the annexation between the driver module, diode D1 of transformer T2 and Q1 and current rectifying and wave filtering circuit that capacitor C 2 is formed, the metal-oxide-semiconductor Q1 etc.; Annexation between the current rectifying and wave filtering circuit that the driver module of transformer T2 and Q2, diode D2 and capacitor C 3 are formed, the metal-oxide-semiconductor Q2 etc. please refer to the description among the embodiment shown in Figure 2, no longer describes in detail herein.
Its operation principle is as follows:
When the primary winding L1 of transformer T2 voltage is last when negative just down, the first secondary winding transformer L2 induced voltage also is last negative just down, the voltage of output dashes for capacitor C 2 by diode D1 on the one hand, on capacitor C 2, obtain direct voltage, a high level is provided for triode Q3, Q4 in the plug-type circuit by resistance R 1 on the other hand, make triode Q3 conducting, Q4 ends, and the voltage on the electric capacity is opened metal-oxide-semiconductor Q1 by triode Q3, resistance R 3.
Meanwhile, the voltage that second subprime winding L3 goes up induction is last just bearing down, and negative voltage is by resistance R 4 turn-on transistor Q6, and the GS of metal-oxide-semiconductor Q2 is by triode Q6, resistance R 5 short circuits, and metal-oxide-semiconductor Q2 ends.
Because metal-oxide-semiconductor Q1 conducting, Q2 ends, and VPFC voltage forms pulse current for capacitor C 1 charging by the elementary of metal-oxide-semiconductor Q1, transformer T1, and therefore the secondary winding transformer of transformer T1 has obtained induced current, and energy delivery has been gone out, and metal-oxide-semiconductor Q2 ends.
Otherwise easily right, when bearing positive down induced voltage in the transformer T2 generation,, repeat no more with above-mentioned analytical method.
Present embodiment, the spike energy that the overshoot of drive signal rising edge can be produced by the electric capacity in the current rectifying and wave filtering circuit absorb and are converted into direct voltage and come the driven MOS pipe, by plug-type circuit, can quicken the conducting of metal-oxide-semiconductor.Compare traditional drive circuit, present embodiment has shortened the rise time of drive signal, has reduced the overshoot of rising, thereby reduces the power consumption of metal-oxide-semiconductor, reduces the caloric value of metal-oxide-semiconductor.
Need to prove, present embodiment and the involved metal-oxide-semiconductor drive circuit of other embodiment of the present utility model, in comprising embodiment the related electronic component, also comprise other elements known in those skilled in the art, for outstanding invention thought of the present utility model, therefore, in embodiment of the present utility model, only the element that relates to invention thought of the present utility model is described, other known in metal-oxide-semiconductor elements is not added give unnecessary details.
Above disclosed only is the utility model preferred embodiment, can not limit the interest field of the utility model certainly with this, and therefore the equivalent variations of being done according to the utility model claim still belongs to the scope that the utility model is contained.
Claims (6)
1. metal-oxide-semiconductor drive circuit, comprise metal-oxide-semiconductor, produce drive signal to control the transformer of described metal-oxide-semiconductor, it is characterized in that, described drive circuit also comprises current rectifying and wave filtering circuit and metal-oxide-semiconductor driver module, wherein, first output of described transformer links to each other with metal-oxide-semiconductor successively by current rectifying and wave filtering circuit, metal-oxide-semiconductor driver module, and second output of described transformer links to each other with described metal-oxide-semiconductor by described metal-oxide-semiconductor driver module.
2. metal-oxide-semiconductor drive circuit according to claim 1 is characterized in that described current rectifying and wave filtering circuit is made up of diode and capacitances in series.
3. metal-oxide-semiconductor drive circuit according to claim 2 is characterized in that, described metal-oxide-semiconductor driver module comprises plug-type circuit, and this plug-type circuit is to be recommended by two triodes to be connected to form.
4. metal-oxide-semiconductor drive circuit according to claim 3 is characterized in that, the diode in the described current rectifying and wave filtering circuit links to each other with first output of transformer, and the two ends of electric capacity link to each other with the collector electrode of two triodes in the described plug-type circuit respectively.
5. metal-oxide-semiconductor drive circuit according to claim 4, it is characterized in that, described metal-oxide-semiconductor driver module also comprises first resistance, second resistance and the 3rd resistance, wherein, second output of described transformer links to each other with the base stage of two triodes in the described plug-type circuit respectively by first resistance, the emitter of described two triodes links to each other with the grid of described metal-oxide-semiconductor by second resistance, and described the 3rd resistance is connected across between the grid of metal-oxide-semiconductor and the earth terminal and constitutes discharge path.
6. metal-oxide-semiconductor drive circuit according to claim 3 is characterized in that, described two triodes are respectively NPN type triode and positive-negative-positive triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206706186U CN201937456U (en) | 2010-12-20 | 2010-12-20 | MOS (Metal Oxide Semiconductor) tube drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206706186U CN201937456U (en) | 2010-12-20 | 2010-12-20 | MOS (Metal Oxide Semiconductor) tube drive circuit |
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| Publication Number | Publication Date |
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| CN201937456U true CN201937456U (en) | 2011-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010206706186U Expired - Fee Related CN201937456U (en) | 2010-12-20 | 2010-12-20 | MOS (Metal Oxide Semiconductor) tube drive circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104833817A (en) * | 2015-05-06 | 2015-08-12 | 成都诚邦动力测试仪器有限公司 | Motor speed measuring system based on linear drive |
| CN110672907A (en) * | 2018-07-03 | 2020-01-10 | 东元电机股份有限公司 | Voltage response test method for power electronic element |
| CN111357180A (en) * | 2019-08-09 | 2020-06-30 | 深圳欣锐科技股份有限公司 | Gate driving circuit |
| CN113541444A (en) * | 2020-04-15 | 2021-10-22 | 芯好半导体(成都)有限公司 | Current recovery circuit, switch converter and integrated circuit |
-
2010
- 2010-12-20 CN CN2010206706186U patent/CN201937456U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104833817A (en) * | 2015-05-06 | 2015-08-12 | 成都诚邦动力测试仪器有限公司 | Motor speed measuring system based on linear drive |
| CN110672907A (en) * | 2018-07-03 | 2020-01-10 | 东元电机股份有限公司 | Voltage response test method for power electronic element |
| CN110672907B (en) * | 2018-07-03 | 2021-09-21 | 东元电机股份有限公司 | Voltage response test method for power electronic element |
| CN111357180A (en) * | 2019-08-09 | 2020-06-30 | 深圳欣锐科技股份有限公司 | Gate driving circuit |
| WO2021026702A1 (en) * | 2019-08-09 | 2021-02-18 | 深圳欣锐科技股份有限公司 | Gate drive circuit |
| CN111357180B (en) * | 2019-08-09 | 2021-07-13 | 深圳欣锐科技股份有限公司 | Gate driving circuit |
| CN113541444A (en) * | 2020-04-15 | 2021-10-22 | 芯好半导体(成都)有限公司 | Current recovery circuit, switch converter and integrated circuit |
| CN113541444B (en) * | 2020-04-15 | 2023-03-24 | 成都中启易联科技有限公司 | Current recovery circuit, switch converter and integrated circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110817 Termination date: 20181220 |
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| CF01 | Termination of patent right due to non-payment of annual fee |