CN202085069U - Power supply polarity conversion circuit - Google Patents
Power supply polarity conversion circuit Download PDFInfo
- Publication number
- CN202085069U CN202085069U CN2011201979586U CN201120197958U CN202085069U CN 202085069 U CN202085069 U CN 202085069U CN 2011201979586 U CN2011201979586 U CN 2011201979586U CN 201120197958 U CN201120197958 U CN 201120197958U CN 202085069 U CN202085069 U CN 202085069U
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- oxide
- semiconductor
- metal
- power supply
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Abstract
The utility model relates to a power supply polarity conversion circuit, which is characterized by comprising four metal oxide semiconductor (MOS) tubes, four voltage stabilizing tubes and two resistors, wherein drain electrodes of the first MOS tube and the third MOS tube are respectively connected with a first electrode of an input power supply, drain electrodes of the second MOS tube and the fourth MOS tube are respectively connected with a second electrode of the input power supply, a grid electrode of the first MOS tube is connected with the first voltage stabilizing tube and is then connected with the second electrode of the input power supply, a source electrode of the first MOS tube is connected with the first resistor and is then connected with the first electrode of the input power supply, a grid electrode of the third MOS tube is connected with the third voltage stabilizing tube and is then connected with the second electrode of the input power supply, a source electrode of the third MOS tube is connected with the second resistor and is then connected with the second electrode of the input power supply, a grid electrode of the second MOS tube is connected with a base of the second voltage stabilizing tube and is connected with the first electrode of the input power supply, a grid electrode of the fourth MOS tube is connected with the fourth voltage stabilizing tube and is then connected with the first electrode of the input power supply, and the source electrode of the second MOS tube and the source electrode of the fourth MOS tube are the first electrode and the second electrode of an output power supply. The power supply polarity conversion circuit has the advantages that the circuit loss is small, the heating quantity is low, and the voltage difference is small.
Description
Technical field
The utility model relates to a kind of electric power polarity change-over circuit.
Background technology
Several electric power polarity change-over circuits commonly used at present have:
1, utilize bridge heap or diode to realize the automatic switching circuit of input polarity, the input of sort circuit, output pressure reduction are bigger, and heating is high.
2, utilize relay to realize the automatic switching circuit of polarity, the common volume of sort circuit is bigger.
3, utilize metal-oxide-semiconductor to realize polarity switching, as shown in Figure 2, the cut-in voltage of this circuit requirement metal-oxide-semiconductor must be higher than input voltage, otherwise can damage metal-oxide-semiconductor.Its scope of application just is restricted.The input voltage of existing a lot of products is 24V, and the cut-in voltage of a lot of metal-oxide-semiconductors of using always is ± 20V, so this circuit just can not use.
The utility model content
Technical problem to be solved in the utility model is to provide the electric power polarity that a kind of loss is low, heating is low, pressure reduction is little change-over circuit at above-mentioned prior art.
The utility model solves the problems of the technologies described above the technical scheme that is adopted: this electric power polarity change-over circuit, it is characterized in that: comprise first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, first voltage-stabiliser tube, second voltage-stabiliser tube, the 3rd voltage-stabiliser tube, the 4th voltage-stabiliser tube, first resistance, second resistance, wherein, the drain electrode of first metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor all extremely links to each other with first of input power supply, and the drain electrode of second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor all extremely links to each other with second of input power supply; The grid of first metal-oxide-semiconductor links to each other with the negative electrode of first voltage-stabiliser tube, and the anode of first voltage-stabiliser tube extremely links to each other with second of input power supply; The source electrode of first metal-oxide-semiconductor links to each other with first end of first resistance, and second end of first resistance extremely links to each other with first of input power supply; The grid of the 3rd metal-oxide-semiconductor links to each other with the anode of the 3rd voltage-stabiliser tube, and the negative electrode of the 3rd voltage-stabiliser tube extremely links to each other with second of input power supply; The source electrode of the 3rd metal-oxide-semiconductor links to each other with first end of second resistance, and second end of second resistance extremely links to each other with second of input power supply; The grid of second metal-oxide-semiconductor links to each other with the negative electrode of second voltage-stabiliser tube, and the anode of second voltage-stabiliser tube extremely links to each other with first of input power supply; The grid of the 4th metal-oxide-semiconductor links to each other with the anode of the 4th voltage-stabiliser tube, and the negative electrode of the 4th voltage-stabiliser tube extremely links to each other with first of input power supply; The source electrode of second metal-oxide-semiconductor is first utmost point of out-put supply, and the source electrode of the 4th metal-oxide-semiconductor is second utmost point of out-put supply.
Described first metal-oxide-semiconductor, second metal-oxide-semiconductor are the PMOS pipe, and described the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor are the NMOS pipe.
Compared with prior art, advantage of the present utility model is: increased by four voltage-stabiliser tubes, the cut-in voltage that can guarantee metal-oxide-semiconductor is within requiring, and the circuit loss that the utility model provides is little, and it is low to generate heat, and pressure reduction is little, is specially adapted in the circuit of big electric current.
Description of drawings
Fig. 1 is the circuit diagram of electric power polarity change-over circuit among the utility model embodiment.
Fig. 2 is a circuit diagram of realizing the electric power polarity conversion in the prior art with metal-oxide-semiconductor.
Embodiment
Embodiment describes in further detail the utility model below in conjunction with accompanying drawing.
Referring to electric power polarity change-over circuit shown in Figure 1, comprise the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4, the first voltage-stabiliser tube D1, the second voltage-stabiliser tube D2, the 3rd voltage-stabiliser tube D3, the 4th voltage-stabiliser tube D4, first resistance R 1, second resistance R 2, wherein, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 is the PMOS pipe, described the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 is the NMOS pipe, the first metal-oxide-semiconductor Q1, the drain electrode of the 3rd metal-oxide-semiconductor Q3 all extremely links to each other the second metal-oxide-semiconductor Q2 with first of input power supply, the drain electrode of the 4th metal-oxide-semiconductor Q3 all extremely links to each other with second of input power supply; The grid of the first metal-oxide-semiconductor Q1 links to each other with the negative electrode of the first voltage-stabiliser tube D1, and the anode of the first voltage-stabiliser tube D1 extremely links to each other with second of input power supply; The source electrode of the first metal-oxide-semiconductor Q1 links to each other with first end of first resistance R 1, and second end of first resistance R 1 extremely links to each other with first of input power supply; The grid of the 3rd metal-oxide-semiconductor Q3 links to each other with the anode of the 3rd voltage-stabiliser tube D3, and the negative electrode of the 3rd voltage-stabiliser tube D3 extremely links to each other with second of input power supply; The source electrode of the 3rd metal-oxide-semiconductor Q3 links to each other with first end of second resistance R 2, and second end of second resistance R 2 extremely links to each other with second of input power supply; The grid of the second metal-oxide-semiconductor Q2 links to each other with the negative electrode of the second voltage-stabiliser tube D2, and the anode of the second voltage-stabiliser tube D2 extremely links to each other with first of input power supply; The grid of the 4th metal-oxide-semiconductor Q4 links to each other with the anode of the 4th voltage-stabiliser tube D4, and the negative electrode of the 4th voltage-stabiliser tube D4 extremely links to each other with first of input power supply; The source electrode of the second metal-oxide-semiconductor Q2 is first utmost point of out-put supply, and the source electrode of the 4th metal-oxide-semiconductor Q4 is second utmost point of out-put supply.
First of above-mentioned input power supply extremely can be for positive pole also can be negative pole, and second of above-mentioned input power supply extremely can be for negative pole also can be positive pole, second negative pole very of first very anodal, the out-put supply of out-put supply.
The realization function of this circuit:, still go up under " bearing " " just " no matter input voltage is under last " just " " bearing "; Output all is under last " just " " bearing ".
Claims (2)
1. electric power polarity change-over circuit, it is characterized in that: comprise first metal-oxide-semiconductor (Q1), second metal-oxide-semiconductor (Q2), the 3rd metal-oxide-semiconductor (Q3), the 4th metal-oxide-semiconductor (Q4), first voltage-stabiliser tube (D1), second voltage-stabiliser tube (D2), the 3rd voltage-stabiliser tube (D3), the 4th voltage-stabiliser tube (D4), first resistance (R1), second resistance (R2), wherein, the drain electrode of first metal-oxide-semiconductor (Q1), the 3rd metal-oxide-semiconductor (Q3) all extremely links to each other with first of input power supply, and the drain electrode of second metal-oxide-semiconductor (Q2), the 4th metal-oxide-semiconductor (Q3) all extremely links to each other with second of input power supply; The grid of first metal-oxide-semiconductor (Q1) links to each other with the negative electrode of first voltage-stabiliser tube (D1), and the anode of first voltage-stabiliser tube (D1) extremely links to each other with second of input power supply; The source electrode of first metal-oxide-semiconductor (Q1) links to each other with first end of first resistance (R1), and second end of first resistance (R1) extremely links to each other with first of input power supply; The grid of the 3rd metal-oxide-semiconductor (Q3) links to each other with the anode of the 3rd voltage-stabiliser tube (D3), and the negative electrode of the 3rd voltage-stabiliser tube (D3) extremely links to each other with second of input power supply; The source electrode of the 3rd metal-oxide-semiconductor (Q3) links to each other with first end of second resistance (R2), and second end of second resistance (R2) extremely links to each other with second of input power supply; The grid of second metal-oxide-semiconductor (Q2) links to each other with the negative electrode of second voltage-stabiliser tube (D2), and the anode of second voltage-stabiliser tube (D2) extremely links to each other with first of input power supply; The grid of the 4th metal-oxide-semiconductor (Q4) links to each other with the anode of the 4th voltage-stabiliser tube (D4), and the negative electrode of the 4th voltage-stabiliser tube (D4) extremely links to each other with first of input power supply; The source electrode of second metal-oxide-semiconductor (Q2) is first utmost point of out-put supply, and the source electrode of the 4th metal-oxide-semiconductor (Q4) is second utmost point of out-put supply.
2. according to the described electric power polarity change-over circuit of claim 1, it is characterized in that: described first metal-oxide-semiconductor (Q1), second metal-oxide-semiconductor (Q2) are the PMOS pipe, and described the 3rd metal-oxide-semiconductor (Q3), the 4th metal-oxide-semiconductor (Q4) are the NMOS pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201979586U CN202085069U (en) | 2011-06-10 | 2011-06-10 | Power supply polarity conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201979586U CN202085069U (en) | 2011-06-10 | 2011-06-10 | Power supply polarity conversion circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202085069U true CN202085069U (en) | 2011-12-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201979586U Expired - Lifetime CN202085069U (en) | 2011-06-10 | 2011-06-10 | Power supply polarity conversion circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202085069U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227093A (en) * | 2011-06-10 | 2011-10-26 | 林万炯 | Polarity switching circuit of power supply |
| CN103458547A (en) * | 2012-05-31 | 2013-12-18 | 海洋王（东莞）照明科技有限公司 | Power source polarity conversion circuit and lamp |
-
2011
- 2011-06-10 CN CN2011201979586U patent/CN202085069U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227093A (en) * | 2011-06-10 | 2011-10-26 | 林万炯 | Polarity switching circuit of power supply |
| CN103458547A (en) * | 2012-05-31 | 2013-12-18 | 海洋王（东莞）照明科技有限公司 | Power source polarity conversion circuit and lamp |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: SELF ELECTRONICS CO.,LTD. Assignor: Lin Wanjiong Contract record no.: 2012330000180 Denomination of utility model: Polarity switching circuit of power supply Granted publication date: 20111221 License type: Exclusive License Record date: 20120416 |
|
| ASS | Succession or assignment of patent right |
Owner name: NINGBO HI. TECH. PARK SELF ELECTRONICS CO., LTD. Free format text: FORMER OWNER: LIN WANJIONG Effective date: 20141222 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20141222 Address after: The national high tech Zone Juxian 315103 Ningbo Road, Zhejiang province No. 1345 Patentee after: SELF ELECTRONICS CO.,LTD. Address before: 315103 Zhejiang city of Ningbo province high tech Zone Juxian Road No. 1345 Ningbo Purcell Electronics Ltd. Patentee before: Lin Wanjiong |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: The national high tech Zone Juxian 315103 Ningbo Road, Zhejiang province No. 1345 Patentee after: SELF ELECTRONICS CO., LTD. Address before: The national high tech Zone Juxian 315103 Ningbo Road, Zhejiang province No. 1345 Patentee before: SELF ELECTRONICS CO.,LTD. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111221 |