CN108667362A - A kind of method that motor control is driven with metal-oxide-semiconductor - Google Patents
A kind of method that motor control is driven with metal-oxide-semiconductor Download PDFInfo
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- CN108667362A CN108667362A CN201810614751.0A CN201810614751A CN108667362A CN 108667362 A CN108667362 A CN 108667362A CN 201810614751 A CN201810614751 A CN 201810614751A CN 108667362 A CN108667362 A CN 108667362A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/28—Arrangements for controlling current
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- Control Of Motors That Do Not Use Commutators (AREA)
- Control Of Direct Current Motors (AREA)
Abstract
The present invention discloses a kind of motor control metal-oxide-semiconductor driving circuit, upper metal-oxide-semiconductor driving circuit including interconnection and lower metal-oxide-semiconductor driving circuit, the output end of the upper metal-oxide-semiconductor driving circuit is connected with the output end of lower metal-oxide-semiconductor driving circuit and as total output end, the sampling end of the other end connection current sampling circuit of the lower MOS drive circuit.Such circuit structure can solve existing motor metal-oxide-semiconductor driving circuit switch metal-oxide-semiconductor gate drive current it is excessive to lead to be lost excessively high and driving current power less than normal, have the characteristics that simple in structure, performance is stable, cost is relatively low and accuracy is high.
Description
The application is application No. is 2016102520391, and the applying date is on 04 21st, 2016, and invention and created name is
A kind of divisional application of the patent of " motor control metal-oxide-semiconductor driving circuit ".
Technical field
The present invention relates to a kind of motor control driving circuit, more particularly to a kind of motor control metal-oxide-semiconductor driving circuit.
Background technology
It is multiple that motor has been successfully applied to military affairs, aviation, computer, numerically-controlled machine tool, robot and electric bicycle etc.
Field.For the metal-oxide-semiconductor driving circuit of existing motor, the control strategy used will appear switch metal-oxide-semiconductor gate-drive electricity more
Flowing through greatly leads to that the defects of excessively high and drive circuit power is less than normal is lost, and has much room for improvement.
Invention content
The purpose of the present invention is to provide a kind of motor control metal-oxide-semiconductor driving circuit, can solve existing motor
Metal-oxide-semiconductor driving circuit switch metal-oxide-semiconductor gate drive current is excessive less than normal, the tool that leads to be lost excessively high and driving current power
Have the characteristics that simple in structure, performance is stable, cost is relatively low and accuracy is high.
In order to achieve the above objectives, solution of the invention is：
A kind of motor control metal-oxide-semiconductor driving circuit, including the upper metal-oxide-semiconductor driving circuit of interconnection and lower metal-oxide-semiconductor drive
Dynamic circuit, the output end of the upper metal-oxide-semiconductor driving circuit are connected with the output end of lower metal-oxide-semiconductor driving circuit and as total outputs
End, the sampling end of the other end connection current sampling circuit of the lower MOS drive circuit.
Further, the upper metal-oxide-semiconductor driving circuit includes the first to the tenth resistance, the first diode, first to
Six triodes, the first to the second capacitance and the first to the second metal-oxide-semiconductor, wherein the anode of+15V voltage signals and the first diode,
One end of first resistor, the emitter of the first triode are connected；+ 3.3V voltage signals are connected with second resistance one end, the second electricity
The other end of resistance is connected with the base stage of the second triode, and the emitter of the second triode is connected with one end of the 4th resistance, and the 4th
The PWMA+ of another termination motor of resistance controls signal, the collector of the second triode and one end of 3rd resistor, third
The base stage of triode is connected, the cathode of the other end of 3rd resistor and the first diode, the emitter of third transistor, the four or three
The collector of pole pipe, one end of the 8th resistance, one end of the first capacitance are connected, the collector of third transistor and the 4th triode
Base stage, the base stage of the 5th triode, the 5th resistance one end be connected, one end of the emitter and the 6th resistance of the 4th triode
It is connected, the other end of the 6th resistance and one end of the 7th resistance, the emitter of the 6th triode, one end of the second capacitance, the 9th
One end of resistance, one end of the tenth resistance are connected, and the other end of the 9th resistance is connected with the grid of the first metal-oxide-semiconductor, the tenth resistance
The other end be connected with the grid of the second metal-oxide-semiconductor, the emitter of the 5th triode and the other end, the 6th triode of the 7th resistance
Base stage be connected, the collector and the other end of the 5th resistance of the 5th triode, the collector of the 6th triode, the 8th resistance
The source electrode, total defeated of the other end, the other end of the first capacitance, the other end of the second capacitance, the source electrode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor
Outlet be connected, the source electrode of first metal-oxide-semiconductor, the source electrode of the second metal-oxide-semiconductor connected point be the upper metal-oxide-semiconductor driving circuit it is defeated
Outlet.
Further, the model that first capacitance uses is 50V/47 μ F.
Further, the drain electrode of the first metal-oxide-semiconductor, the drain electrode of the second metal-oxide-semiconductor are connected with+48V voltage signals jointly.
Further, the lower metal-oxide-semiconductor driving circuit includes the 11st to the 17th resistance, the 7th to the 13rd pole
Pipe, third to the 5th capacitance and third to the 4th metal-oxide-semiconductor, wherein base stage, the third of+3.3V voltage signals and the 7th triode
One end of capacitance, one end of the 4th capacitance are connected, and the other end of third capacitance and the other end of the 4th capacitance are grounded jointly, and the 7th
The collector of triode is connected with the base stage of the other end of first resistor, the first triode, the emitter of the 7th triode and
One end of 11 resistance is connected；The other end of eleventh resistor is connected with the PWMA- of motor control signals, the 8th triode
Collector be connected with the anode of the emitter of the first triode ,+15V voltage signals, the first diode, the base of the 8th triode
Pole is connected with one end of the collector of the first triode, the base stage of the 9th triode, the 14th resistance, the transmitting of the 8th triode
Pole is connected with one end of twelfth resistor, the hair of the other end of twelfth resistor and one end of thirteenth resistor, the tenth triode
Emitter-base bandgap grading, one end of the 5th capacitance, one end of the 16th resistance, one end of the 17th resistance are connected；The other end of thirteenth resistor
It is connected with the base stage of the emitter of the 9th triode, the tenth triode；The collection of the other end and the 9th triode of 14th resistance
Electrode, the collector of the tenth triode, the other end of the 15th resistance, the other end of the 5th capacitance, third metal-oxide-semiconductor source electrode,
The source electrode of 4th metal-oxide-semiconductor and the sampling end of the current sampling circuit are connected；The other end of 16th resistance and third metal-oxide-semiconductor
Grid be connected, the other end of the 17th resistance is connected with the grid of the 4th metal-oxide-semiconductor, the drain electrode of third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor
Drain electrode be connected and the output end of the point as the lower metal-oxide-semiconductor driving circuit that be connected, be connected to total output end.
Further, the drain electrode of third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor drain electrode jointly in the upper metal-oxide-semiconductor driving circuit
+ 48V voltage signals be connected.
Further, the first capacitance, third capacitance are electrolytic capacitor, and the second capacitance, the 4th capacitance, the 5th capacitance are
Patch capacitor.
Further, in the first to the tenth triode, the first triode, third transistor, the 5th triode, the six or three pole
Pipe, the 9th triode and the tenth triode are PNP type triode；Second triode, the 4th triode, the 7th triode with
And the 8th triode be NPN type triode.
Further, first to fourth metal-oxide-semiconductor is N-channel enhanced mos field effect transistor.
After adopting the above scheme, the invention has the characteristics that：
(1) by the gate drive voltage of reasonable disposition power MOS pipe, its switching loss is reduced, is prolonged the service life,
Realization preferably controls motor；
(2) by the cooperative pattern of multitube, it can reduce because of fault rate and extend its service life；
(3) circuit is simple and practical, and stability is good, of low cost, easy to maintain, and market is widely used.
Description of the drawings
Fig. 1 is the integrated stand composition of the present invention.
Specific implementation mode
Below with reference to attached drawing, technical scheme of the present invention is described in detail.
As shown in Figure 1, the present invention provides a kind of motor control metal-oxide-semiconductor driving circuit, include the upper metal-oxide-semiconductor of interconnection
Driving circuit and lower metal-oxide-semiconductor driving circuit, the sampling output of the other end connection current sampling circuit of the lower MOS drive circuit
The sampling input terminal at end, the current sampling circuit connects motor.The upper metal-oxide-semiconductor driving circuit and lower metal-oxide-semiconductor are driven below
Dynamic circuit is introduced respectively.
The upper metal-oxide-semiconductor driving circuit includes first to the tenth ten resistance of resistance R1-R10, the first diode D1 mono-
Diode, first to the 6th six triodes of triode Q1-Q6, two capacitances of the first to the second capacitance C1-C2 and first are to
Two MOS transistors of metal-oxide-semiconductor V1-V2 two, wherein+15V voltage signals (i.e. the driving power of motor) are with the first diode D1's
Anode, one end of first resistor R1, the emitter of the first triode Q1 are connected；+ 3.3V voltage signals (the i.e. light current electricity of motor
Source) it is connected with the one end second resistance R2, the other end of second resistance R2 is connected with the base stage of the second triode Q2, the second triode
The emitter of Q2 is connected with one end of the 4th resistance R4, and the PWMA+ of another termination motor of the 4th resistance R4 controls signal,
The collector of second triode Q2 is connected with the base stage of one end of 3rd resistor R3, third transistor Q3, and 3rd resistor R3's is another
The cathode, the emitter of third transistor Q3, the collector of the 4th triode Q4, the 8th resistance R8 of one end and the first diode D1
One end, the first capacitance C1 one end be connected, the base stage of the collector of third transistor Q3 and the 4th triode Q4, the five or three pole
The base stage of pipe Q5, one end of the 5th resistance R5 are connected, and the emitter of the 4th triode Q4 is connected with one end of the 6th resistance R6, the
The other end of six resistance R6 and one end of the 7th resistance R7, the emitter of the 6th triode Q6, one end of the second capacitance C2, the 9th
One end of resistance R9, one end of the tenth resistance R10 are connected, and the other end of the 9th resistance R9 is connected with the grid of the first metal-oxide-semiconductor V1,
The other end of tenth resistance R10 is connected with the grid of the second metal-oxide-semiconductor V2, the emitter of the 5th triode Q5 and the 7th resistance R7's
The other end, the base stage of the 6th triode Q6 are connected, the collector of the 5th triode Q5 and the other end of the 5th resistance R5, the six or three
The collector of pole pipe Q6, the other end of the 8th resistance R8, the other end of the first capacitance C1, the other end of the second capacitance C2, first
The source electrode of metal-oxide-semiconductor V1, the source electrode of the second metal-oxide-semiconductor V2, output terminals A are connected, and the winding of output terminals A connection motor is believed with output driving
The rotation of number control motor.In the present embodiment, the drain electrode of the first metal-oxide-semiconductor V1, the drain electrode of the second metal-oxide-semiconductor V2 jointly with+48V voltages
Signal (i.e. the power power-supply of motor) is connected；The first capacitance C1 is electrolytic capacitor, and the model of use is 50V/47 μ F；Second
Capacitance C2 is patch capacitor；First triode Q1, third transistor Q3, the 5th triode Q5, the 6th triode Q6 are positive-negative-positive
Triode, the second triode Q2, the 4th triode Q4 are NPN type triode；First metal-oxide-semiconductor V1 and the second metal-oxide-semiconductor V2 is N
Channel enhancement MOS field-effect transistors.
The lower metal-oxide-semiconductor driving circuit includes the 11st to the 17th resistance R11-R17 seven resistance, seven to the tenth
Tetra- triodes of triode Q7-Q10, third to tri- three capacitances of the 5th capacitance C3-C5 and third are to the 4th metal-oxide-semiconductor V3-V4
Two MOS transistors.Wherein, the base stage of+3.3V voltage signals and the 7th triode Q7, one end of third capacitance C3, the 4th electricity
The one end for holding C4 is connected, and the other end of the other end and the 4th capacitance C4 of third capacitance C3 is grounded jointly, the 7th triode Q7's
Collector is connected with the base stage of the other end of first resistor R1, the first triode Q1, the emitter and the tenth of the 7th triode Q7
One end of one resistance R11 is connected；The other end of eleventh resistor R11 is connected with the PWMA- of motor control signals, and the eight or three
The collector of pole pipe Q8 is connected with the anode of the emitter of the first triode Q1 ,+15V voltage signals, the first diode D1, and the 8th
The base stage of triode Q8 and the collector of the first triode Q1, the base stage of the 9th triode Q9, one end phase of the 14th resistance R14
Even, the emitter of the 8th triode Q8 is connected with one end of twelfth resistor R12, the other end of twelfth resistor R12 and the tenth
One end of three resistance R13, the emitter of the tenth triode Q10, one end of the 5th capacitance C5, one end of the 16th resistance R16,
One end of 17 resistance R17 is connected；The emitter of the other end of thirteenth resistor R13 and the 9th triode Q9, the tenth triode
The base stage of Q10 is connected；The current collection of the other end of 14th resistance R14 and the collector of the 9th triode Q9, the tenth triode Q10
Pole, the other end of the 15th resistance R15, the other end of the 5th capacitance C5, the source electrode of third metal-oxide-semiconductor V3, the 4th metal-oxide-semiconductor V4 source
The sampled output (sampling) of pole and the current sampling circuit is connected；The other end and third of 16th resistance R16
The grid of metal-oxide-semiconductor V3 is connected, and the other end of the 17th resistance R17 is connected with the grid of the 4th metal-oxide-semiconductor V4, third metal-oxide-semiconductor V3's
Drain electrode, the drain electrode of the 4th metal-oxide-semiconductor V4 are connected and are connected to output terminals A.In the present embodiment, third capacitance C3 be electrolytic capacitor, the 4th
Capacitance C4, the 5th capacitance C5 are patch capacitor, and third capacitance C3 in parallel with the 4th capacitance C4 can be the 7th triode Q7
Stable base voltage is provided, the 5th capacitance C5 is for filtering the grid signal of third metal-oxide-semiconductor V3 and the 4th metal-oxide-semiconductor V4
Wave；7th triode Q7 and the 8th triode Q8 is NPN type triode, and the 9th triode Q9 and the tenth triode Q10 are equal
For PNP type triode；Third metal-oxide-semiconductor V3 and the 4th metal-oxide-semiconductor V4 is N-channel enhanced mos field effect transistor.
Using circuit structure provided by the invention, metal-oxide-semiconductor driving circuit separates independent work with lower metal-oxide-semiconductor driving circuit thereon
Make, the failure rate caused by circuit connection coupling etc. can be reduced in this way, the stability of circuit is greatly increased, prolong the service life.
On the other hand, the PWMA control signals of PWM output modules output are not added on metal-oxide-semiconductor directly or indirectly, but pass through combination
The reasonable disposition of circuit reduces its impact to device, extends the service life of related device.
When work, microcontroller receives the signal of Hall sensor etc., is exported in one cycle after calculating fixed
PWMA signals control two metal-oxide-semiconductors of two metal-oxide-semiconductors V1, V2 and lower metal-oxide-semiconductor driving circuit in upper metal-oxide-semiconductor driving circuit
V3, V4's turns on and off, and to control the rotation of motor control, passes through PWMA signal control drive circuit correlation triodes
Break-make, to achieve the purpose that the corresponding metal-oxide-semiconductor of control switchs work.In upper metal-oxide-semiconductor driving circuit, capacitance C1 is used as certainly
Capacitance is lifted, charge and discharge can improve control accuracy of the PWMA signals to each metal-oxide-semiconductor well, reach to motor control with more preferably
Control effect.When PWMA control signals are high level, the first metal-oxide-semiconductor V1, the second metal-oxide-semiconductor V2 conductings, at this point, bootstrap capacitor
C1 charges, after waiting for that PWMA control signal level conversions make related triode end so that associated driver circuitry is stopped, from
Capacitance C1 is lifted by discharge diode Q6 repid discharges, so that the first metal-oxide-semiconductor V1, the second metal-oxide-semiconductor V2 is immediately turned off, is off shape
State improves control accuracy.
The motor control metal-oxide-semiconductor driving circuit of the present invention can extend realization by the working method of paralleling MOS pipe
The metal-oxide-semiconductor driving circuit of six pipes, nine pipes, 12 pipes, to meet the power demand of the brshless DC motor of different loads amount.
Above example is merely illustrative of the invention's technical idea, and protection scope of the present invention cannot be limited with this, every
According to technological thought proposed by the present invention, any change done on the basis of technical solution each falls within the scope of the present invention
Within.
Claims (10)
1. a kind of method that motor control is driven with metal-oxide-semiconductor, including：
The upper metal-oxide-semiconductor driving circuit being connected with each other and lower metal-oxide-semiconductor driving circuit, the output of the upper metal-oxide-semiconductor driving circuit are provided
End is connected with the output end of lower metal-oxide-semiconductor driving circuit and as total output end, the other end connection electricity of the lower MOS drive circuit
Flow the sampling end of sample circuit；
Microcontroller receives the signal of Hall sensor etc., exports fixed PWMA signals in one cycle after calculating to control
Make the third in the first metal-oxide-semiconductor and the second metal-oxide-semiconductor and the lower metal-oxide-semiconductor driving circuit in the upper metal-oxide-semiconductor driving circuit
Metal-oxide-semiconductor and the 4th metal-oxide-semiconductor turn on and off, to control the rotation of motor control.
2. the method that motor control as described in claim 1 is driven with metal-oxide-semiconductor, it is characterised in that：It is driven in the upper metal-oxide-semiconductor
In circuit, using the first capacitance as bootstrap capacitor, when PWMA control signals are high level, first metal-oxide-semiconductor and the
Two metal-oxide-semiconductors are connected.
3. the method that motor control as claimed in claim 2 is driven with metal-oxide-semiconductor, it is characterised in that：When first metal-oxide-semiconductor and
When second metal-oxide-semiconductor is connected, the bootstrap capacitor charges, and so that related triode is cut PWMA control signal level conversions
Only so that associated driver circuitry is stopped.
4. the method that motor control as claimed in claim 3 is driven with metal-oxide-semiconductor, it is characterised in that：It controls and believes in the PWMA
After number level conversion makes related triode end so that associated driver circuitry is stopped, the bootstrap capacitor passes through electric discharge three
Pole pipe repid discharge.
5. the method that motor control as claimed in claim 4 is driven with metal-oxide-semiconductor, it is characterised in that：It is logical in the bootstrap capacitor
After overdischarge triode repid discharge, first metal-oxide-semiconductor and the second metal-oxide-semiconductor are immediately turned off, and are off state.
6. the method that motor control as claimed in claim 2 is driven with metal-oxide-semiconductor, it is characterised in that：First capacitance uses
Model be 50V/47 μ F.
7. the method that motor control as described in claim 1 is driven with metal-oxide-semiconductor, it is characterised in that：By first metal-oxide-semiconductor
Drain electrode and the drain electrode of second metal-oxide-semiconductor are connected with+48V voltage signals jointly.
8. the method that motor control as described in claim 1 is driven with metal-oxide-semiconductor, it is characterised in that：The leakage of the third metal-oxide-semiconductor
The source electrode and second with the first metal-oxide-semiconductor in the upper metal-oxide-semiconductor driving circuit jointly that drains of pole and the 4th metal-oxide-semiconductor
The source electrode of metal-oxide-semiconductor is connected.
9. the method that motor control as described in claim 1 is driven with metal-oxide-semiconductor, it is characterised in that：First capacitance is electricity
Solve capacitance.
10. the method that motor control as described in claim 1 is driven with metal-oxide-semiconductor, it is characterised in that：Described first to fourth
Metal-oxide-semiconductor is N-channel enhanced mos field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810614751.0A CN108667362A (en) | 2016-04-21 | 2016-04-21 | A kind of method that motor control is driven with metal-oxide-semiconductor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610252039.1A CN105811819B (en) | 2016-04-21 | 2016-04-21 | A kind of motor control metal-oxide-semiconductor driving circuit |
| CN201810614751.0A CN108667362A (en) | 2016-04-21 | 2016-04-21 | A kind of method that motor control is driven with metal-oxide-semiconductor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610252039.1A Division CN105811819B (en) | 2016-04-21 | 2016-04-21 | A kind of motor control metal-oxide-semiconductor driving circuit |
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| CN108667362A true CN108667362A (en) | 2018-10-16 |
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| CN201610252039.1A Active CN105811819B (en) | 2016-04-21 | 2016-04-21 | A kind of motor control metal-oxide-semiconductor driving circuit |
| CN201810614751.0A Pending CN108667362A (en) | 2016-04-21 | 2016-04-21 | A kind of method that motor control is driven with metal-oxide-semiconductor |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610252039.1A Active CN105811819B (en) | 2016-04-21 | 2016-04-21 | A kind of motor control metal-oxide-semiconductor driving circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106208637B (en) * | 2016-09-12 | 2019-07-02 | 中国矿业大学 | A kind of driving circuit of switched reluctance machines MOSFET power inverter |
| CN110176879B (en) * | 2019-06-28 | 2020-12-29 | 西安微电子技术研究所 | Anti-irradiation high-voltage driving circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020030464A1 (en) * | 2000-09-08 | 2002-03-14 | Rohm Co., Ltd. | Drive controller for brushless motors |
| CN101420198A (en) * | 2008-12-05 | 2009-04-29 | 广州华南智信微系统有限公司 | Five phase DC brushless motor controller |
| CN104467559A (en) * | 2014-12-11 | 2015-03-25 | 惠州市蓝微电子有限公司 | Brushless motor H-bridge drive circuit |
| CN204681274U (en) * | 2015-06-08 | 2015-09-30 | 无锡机电高等职业技术学校 | A kind of brshless DC motor metal-oxide-semiconductor drive circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4321444B2 (en) * | 2004-11-19 | 2009-08-26 | パナソニック株式会社 | Motor drive device with MOS FET, MOS FET, and motor with MOS FET |
| CN204349852U (en) * | 2014-11-05 | 2015-05-20 | 无锡曼克斯电子科技有限公司 | A kind of control device of wind-driven generator limit protection assembly |
-
2016
- 2016-04-21 CN CN201610252039.1A patent/CN105811819B/en active Active
- 2016-04-21 CN CN201810614751.0A patent/CN108667362A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020030464A1 (en) * | 2000-09-08 | 2002-03-14 | Rohm Co., Ltd. | Drive controller for brushless motors |
| CN101420198A (en) * | 2008-12-05 | 2009-04-29 | 广州华南智信微系统有限公司 | Five phase DC brushless motor controller |
| CN104467559A (en) * | 2014-12-11 | 2015-03-25 | 惠州市蓝微电子有限公司 | Brushless motor H-bridge drive circuit |
| CN204681274U (en) * | 2015-06-08 | 2015-09-30 | 无锡机电高等职业技术学校 | A kind of brshless DC motor metal-oxide-semiconductor drive circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105811819B (en) | 2018-08-17 |
| CN105811819A (en) | 2016-07-27 |
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